JPH0473028U - - Google Patents

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Publication number
JPH0473028U
JPH0473028U JP11489590U JP11489590U JPH0473028U JP H0473028 U JPH0473028 U JP H0473028U JP 11489590 U JP11489590 U JP 11489590U JP 11489590 U JP11489590 U JP 11489590U JP H0473028 U JPH0473028 U JP H0473028U
Authority
JP
Japan
Prior art keywords
entrance
waterway
screen
intake channel
river
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11489590U
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English (en)
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JPH0529228Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11489590U priority Critical patent/JPH0529228Y2/ja
Publication of JPH0473028U publication Critical patent/JPH0473028U/ja
Application granted granted Critical
Publication of JPH0529228Y2 publication Critical patent/JPH0529228Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】
図面は本考案の実施例を示すもので、第１図は
概略平面図、第２図は拡大斜視図、第３図は細目
除塵スクリーンの一例を示す概略平面図、第４図
は同縦断側面図である。 １……河川、２……堰堤、７……バイパス水路
、８……粗目スクリーン、９……制水ゲート、１
０……取水路、１１……細目スクリーン、１２…
…取水ゲート。

Claims (1)

    【実用新案登録請求の範囲】
  1. 河川１の堰堤２の上流側と下流側を接続するバ
    イパス水路７を設け、該水路７には入口に粗ごみ
    除去用スクリーン８を、出口に制水ゲート９を設
    けると共に中間に農耕用等の取水路１０の入口を
    連通し、該取水路１０の入口部に細目のスクリー
    ン１１を設け、該細目スクリーン１１の下流側取
    水路１０に取水ゲート１２を配設し、適宜制水ゲ
    ート９を開いて小魚を河川へ流下させるようにし
    たことを特徴とする魚道補助装置。
JP11489590U 1990-10-31 1990-10-31 Expired - Lifetime JPH0529228Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11489590U JPH0529228Y2 (ja) 1990-10-31 1990-10-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11489590U JPH0529228Y2 (ja) 1990-10-31 1990-10-31

Publications (2)

Publication Number Publication Date
JPH0473028U true JPH0473028U (ja) 1992-06-26
JPH0529228Y2 JPH0529228Y2 (ja) 1993-07-27

Family

ID=31862618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11489590U Expired - Lifetime JPH0529228Y2 (ja) 1990-10-31 1990-10-31

Country Status (1)

Country Link
JP (1) JPH0529228Y2 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003065424A2 (en) 2002-01-25 2003-08-07 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
WO2004113585A2 (en) 2003-06-18 2004-12-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPH0529228Y2 (ja) 1993-07-27

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