JPH0473932A - Semiconductor manufacturing apparatus - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of semiconductor manufacturing equipment.

In recent years, various advanced semiconductor manufacturing equipment have been used to manufacture semiconductor devices.

2. Description of the Related Art Semiconductor devices are becoming more highly integrated and miniaturized year by year, and as a result, various manufacturing facilities are required to prevent various types of contamination and dust generation caused during the manufacturing process of semiconductor devices.

3. Detailed Description of the Invention [Summary] The present invention relates to the structure of a semiconductor manufacturing apparatus for manufacturing semiconductor devices.

The purpose is to provide a method for preventing contamination of semiconductor substrates and other objects to be processed.

In a semiconductor manufacturing apparatus that processes a workpiece using an energy beam, the energy beam is [Prior Art] FIG. 3 is an explanatory diagram of a conventional example.

In the figure, 10 is an ion source, and 11 is an analyzer.

12 is an accelerator, 13 is a scanning power source, and 14 is an ion beam.

15 is a semiconductor substrate, 16 is a disk, 17 is a beam catcher, and 18 is a disk holder.

Most conventional semiconductor manufacturing equipment uses aluminum (A1) or stainless steel (SUS) in the processing chamber for semiconductor substrates, etc.
) and other metals are used.

Furthermore, graphite (carbon) has been used for the parts that are continuously irradiated with electron beams and ion beams.

[Problem to be solved by the invention]

However, as the miniaturization of semiconductor devices progresses, a part of the sputtered chamber is reduced to 1, for example, Affi.

Carbon (C), chromium (Cr), nickel (
It has become a serious problem that Ni) and the like are directly injected into a semiconductor substrate or the like to be processed at the same time as sputtering.

For example, in an ion implantation apparatus as shown in FIG. 3(a), as shown in an enlarged view in FIG. 3(b).

The disk 16 in the device is made of Al material.

In addition, the beam catcher 17 is made of a material such as Al, ^i+graphite SUS, etc., and the ion beam 14 is scanned (
scanning) and irradiates the disk 16 or beam catcher 17 as well.

fart! Alternatively, heavy metal contamination caused by scattering and adhering to the surface of the semiconductor substrate 15 etc. becomes a problem.

[Means to solve the problem] FIG. 1 is a diagram explaining the principle of the present invention.

In the figure, 1 is a workpiece, 2 is a workpiece mounting plate, 3 is a chamber, and 4 is an energy beam.

The present invention aims to solve the above problems.

Semiconductor manufacturing equipment that uses two atoms, energy beams, microwaves, etc. to inject, deposit, attach, or etch a substance onto an object to be processed, such as a semiconductor substrate. The same material as the object to be processed is used for the parts that are directly exposed to or irradiated with atoms, ions, or energy beams, such as the mechanical part, chamber, and part for mounting the object to be processed.

That is, two objects of the present invention are that, in a semiconductor manufacturing apparatus that processes a workpiece using an energy beam, a portion to which the energy beam is directly irradiated is made of the same material as the workpiece; achieved.

[Effect]

In the present invention, as mentioned above, mechanical parts and jigs made of the same material as the object to be processed are used in the areas directly hit by the atoms, ions, and energy beams.

Even if these materials fly, they do not cause contamination.

【Example〕

FIG. 2 is an explanatory diagram of a semiconductor substrate mounting portion of an ion implantation apparatus according to an embodiment of the present invention.

In the figure, 5 is a semiconductor substrate, and 6 is a disk.

7 is a beam catcher, 8 is a disk holder, and 9 is an ion beam.

As shown in FIG. 2, in the mechanical part of the ion implantation apparatus, a beam catcher 7 of a silicon (Si) wafer attachment part as a semiconductor substrate 5 which is directly exposed to the electron beam is made of high-purity polycrystalline silicon (polycrystalline silicon). Created by St.

As another example, in the case of a Si substrate, high-purity polySt is used as the material for the portion directly hit by the energy beam or microwave in the various devices described below that use energy beams or microwaves.

For example, in ion implantation equipment, beam gate beam catchers, and dry etching equipment.

High-purity poly-Si is used in wafer holding jigs, chambers, and jigs near electrodes in sputtering equipment, in jigs near deposition plates, chambers, and biases in sputtering equipment, and in jigs and chambers near biases in CVD equipment. Use as.

〔Effect of the invention〕

As explained above, according to the present invention, nine atoms.

Because equipment parts and jigs made of the same material as the semiconductor substrate to be processed are used in the area directly hit by the energy beam such as ions, no contamination by heavy metals, etc. occurs.

This greatly contributes to improving the yield and reliability of semiconductor devices.

[Brief explanation of drawings]

FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is an illustration of one embodiment of the present invention. FIG. 3 is an explanatory diagram of a semiconductor substrate mounting section. Figure 3 is an explanatory diagram of the conventional example. It is. In fig. ■ is the object to be processed. 3 is the chamber. 5 is a semiconductor substrate 7 is a beam catcher. 8 is the disc holder, 9 is the 2 is the workpiece mounting plate. 4 is energy beam. 6 is a disc. On-injection device beam

Claims (1)

[Claims] A semiconductor manufacturing device that processes a workpiece using an energy beam, characterized in that a region directly irradiated with the energy beam is made of the same material as the workpiece. semiconductor manufacturing equipment.