JPH0474716A - Bi-system superconductive material - Google Patents

Bi-system superconductive material

Info

Publication number
JPH0474716A
JPH0474716A JP2181206A JP18120690A JPH0474716A JP H0474716 A JPH0474716 A JP H0474716A JP 2181206 A JP2181206 A JP 2181206A JP 18120690 A JP18120690 A JP 18120690A JP H0474716 A JPH0474716 A JP H0474716A
Authority
JP
Japan
Prior art keywords
atmosphere
mixed gas
film
thin film
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2181206A
Other languages
Japanese (ja)
Inventor
Eiji Natori
栄治 名取
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2181206A priority Critical patent/JPH0474716A/en
Publication of JPH0474716A publication Critical patent/JPH0474716A/en
Pending legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To improve critical electric current density by adding Ir to a Bi-Sr-Ca- Cu-O system or a Bi-Pb-Sr-Ca-Cu-O system superconductive substance so as a ratio of Ir/Cu to be a specific weight ratio. CONSTITUTION:Fixed amounts of Bi2O3, SrCO3, CaCO3 and CuO are mixed and further Ir2O3 in an amount making a weight ratio of Ir/Cu to be 0.005-0.08, then crushed, thus blended. Resultant mixed powder is calcined in an atmosphere of Ar.O2 mixed gas and press-molded, then burned in an atmosphere of Ar.O2 mixed gas to obtain a target material. Next, said target is sputtered on a heated base plate of MgO single crystal by Ar.O2 mixed gas in 1.8-2.3X10<-7> Torr initial degree of vacuum to form a film. Thereafter, resultant film is heated in an atmosphere of Ar.O2 mixed gas and subjected to annealing treatment at a fixed temperature in an O2 atmosphere to afford a thin film of Bi-Sr-Ca-Cu- O system superconductive substance having about 3000-3500 Angstrom film thickness. A thin film of Bi-Pb-Sr-Ca-Cu-O system superconductive substance is obtained in the same manner.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は配線、電磁波センサー、超伝導トランジスタ、
電流制御素子、超伝導マグネット等に用いる超伝導材料
に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to wiring, electromagnetic wave sensors, superconducting transistors,
It relates to superconducting materials used in current control elements, superconducting magnets, etc.

[従来の技術] 超伝導の応用分野を広げるには超伝導材料が高臨界温度
であることは必要不可欠である。Hous ton太学
のC,W、Chuらの初めて臨界温度が液体窒素温度を
越えたY系超伝導物質の発見に続き金属材料技術研究所
の前出らにより臨界温度が100Kを越えるBi、4超
伝導物質が発見されるにいたり超伝導市場は急激に拡大
されるものと考えられている。このBi系超伝導物質は
Bi−3 r−Ca−Cu−○より構成されその化合物
は数種類ある。その主たる組成にBi25r2Ca2C
u30Xが上げられる。また高臨界温度の単相化のため
構成元素の一部をpbで置換する場合もある。
[Prior Art] In order to expand the application fields of superconductivity, it is essential that superconducting materials have a high critical temperature. Following the discovery of Y-based superconducting material whose critical temperature exceeded the liquid nitrogen temperature for the first time by C, W, and Chu et al. of Houston University, Bi, 4, with a critical temperature exceeding 100 K was discovered by Mae et al. It is believed that the superconductor market will expand rapidly as superconducting materials are discovered. This Bi-based superconducting material is composed of Bi-3 r-Ca-Cu-○, and there are several types of compounds thereof. Its main composition is Bi25r2Ca2C
u30X is raised. Furthermore, some of the constituent elements may be replaced with pb in order to achieve a single phase with a high critical temperature.

これらの材料は非常に注目を集めているため詳細は最近
のPhysical  Review  Letter
sやJapanese  Journal  of  
Applied  Physicsの殆どに述べられて
いる。
These materials are attracting a lot of attention, so please see the recent Physical Review Letter for details.
sya Japanese Journal of
It is described in most of Applied Physics.

[発明が解決しようとする課題] しかしながら前記超伝導材料の臨界電流密度は■多結晶
になり易い材料であると共に結晶粒界部に電流を阻害す
る第2相が析出し易い。
[Problems to be Solved by the Invention] However, the critical current density of the superconducting material is as follows: (1) It is a material that tends to become polycrystalline, and a second phase that inhibits current flow is likely to precipitate at grain boundaries.

■コヒーレンス長さが短いため粒界部の影響を受は易い
■Because the coherence length is short, it is easily affected by grain boundaries.

■異方性が強い。 (結晶を配向させる必要がある) 等の理由により大変低いものであった。その値はコンス
タントに得られる値で薄膜は10’A/cm2台、線材
は10”A/Cm2台前半が一般的であった。 通常臨
界電流密度は薄膜を主体としたエレクトロニクスへの応
用で10 ’ A / c m 2以上、線材を主体と
した重電機器への応用で105A / c m2以上必
要と言われているがこの様に値はまだ2桁も差がある。
■Strong anisotropy. (It is necessary to orient the crystals.) It was very low due to the following reasons. The value is consistently obtained and is generally in the 10'A/cm2 range for thin films and in the lower 10'A/cm2 range for wire rods. Normally, the critical current density is 10'A/cm2 for thin film-based electronics applications. It is said that 105A/cm2 or more is required for applications in heavy electrical equipment mainly made of wire rods, but as shown above, there is still a two-digit difference in values.

これらの対策として超伝導物質の単結晶化があるが単結
晶化は大口径化が困難であるだけでなくコストが非常に
高くなるため実用化に向けては多結晶に於て臨界電流密
度を上げる必要がある。
A countermeasure to these problems is to make superconducting materials into single crystals, but single crystals are not only difficult to increase in diameter but also very expensive, so for practical use it is necessary to reduce the critical current density in polycrystals. It is necessary to raise it.

また超伝導トランジスターやジョセフソン素子では数n
mと極めて薄い絶縁層を形成しなくてはならないため表
面は平滑であることが必要であるが現状は数+nmの凹
凸を持っていた。
In addition, in superconducting transistors and Josephson devices, several n
Since it is necessary to form an extremely thin insulating layer with a thickness of 500 nm, the surface must be smooth, but at present it has irregularities of several nanometers.

本発明はこの様な問題を解決するものであり、その目的
とするところは製造コストの安い多結晶体に於て高い臨
界電流密度を持つと共に薄膜ではデバイス化に必要な表
面モホロジーを確保したBi系超伝導材料を得んとする
ものである。
The present invention is intended to solve these problems, and its purpose is to create a Bi film that has a high critical current density in a polycrystalline material that is low in production cost, and that has the surface morphology necessary for device fabrication in a thin film. The aim is to obtain superconducting materials.

[課題を解決するための手段] Bi−Sr−Ca−Cu−0系またはB i −P b
 −Sr−Ca−Cu−0系超伝導物質にIrを添加し
たこと、その添加量は好ましくはI r / Cu比で
0゜005〜0.08の範囲内であること特徴とする。
[Means for solving the problem] Bi-Sr-Ca-Cu-0 system or Bi-Pb
The present invention is characterized in that Ir is added to the -Sr-Ca-Cu-0 based superconducting material, and the amount of Ir added is preferably within the range of 0°005 to 0.08 in terms of Ir/Cu ratio.

[実施例コ 以下実施例に従い本発明の詳細な説明する。[Example code] The present invention will be described in detail below with reference to Examples.

先ずターゲットを作る。所定量の酸化第二銅、三酸化ビ
スマス、炭酸ストロンチウム、炭酸カルシューム、酸化
イリジウムをボールミルにより混合分散させる。次にこ
の粉末を800°Cアルゴン−酸素混合ガス雰囲気中で
15時間仮焼、300k g / c m 2で加圧成
形、最後に865°Cアルゴン−酸素混合ガス雰囲気中
で30時間焼成し2インチ厚さ3mmのターゲットを得
る。
First, create a target. Predetermined amounts of cupric oxide, bismuth trioxide, strontium carbonate, calcium carbonate, and iridium oxide are mixed and dispersed using a ball mill. Next, this powder was calcined for 15 hours at 800°C in an argon-oxygen mixed gas atmosphere, pressure-molded at 300 kg/cm2, and finally fired for 30 hours at 865°C in an argon-oxygen mixed gas atmosphere. Obtain a 3 mm inch thick target.

次にRFマグネトロンスパッタでMg0(100)単結
晶基板上に上記ターゲットを用い薄膜を形成する。この
時の成膜条件は、初期真空度= 1−8〜2.3*IC
17Torr、使用ガス: アルゴン(70%)酸素(
30%)の混合ガス、出力100〜155W、スパッタ
時のガス圧:1.5〜3.2*10−”Torr、基板
温度= 720℃、成膜速度= 4〜8 n m / 
m i n、膜厚3000〜3500人である。尚基板
は表面粗さのバラツキによる臨界電流密度への影響を押
さえるため研磨面ではなくへきかい面を用いた。
Next, a thin film is formed on the Mg0 (100) single crystal substrate by RF magnetron sputtering using the above target. The film forming conditions at this time are: initial degree of vacuum = 1-8 to 2.3*IC
17 Torr, gas used: argon (70%) oxygen (
30%) mixed gas, output 100-155W, gas pressure during sputtering: 1.5-3.2*10-” Torr, substrate temperature = 720°C, film formation rate = 4-8 nm/
min, film thickness is 3000 to 3500 people. In order to suppress the influence of variations in surface roughness on the critical current density, the substrate was not polished but had a cracked surface.

次に845℃アルゴン−酸素混合ガス雰囲気中で15時
間、500°C酸素雰囲気中30時間アニールし超伝導
薄膜を得る。
Next, the superconducting thin film is obtained by annealing at 845° C. in an argon-oxygen mixed gas atmosphere for 15 hours and at 500° C. in an oxygen atmosphere for 30 hours.

得られた超伝導薄膜をイオンビームエツチングによりバ
ターニングした後臨界電流密度を4端子法により測定し
た。測定雰囲気はHeガス中(Heは熱伝導が良く試料
温度を均一化出来ると共に不活性であり試料の変質を防
ぐことが出来る)測定温度は55にで冷却には極低温冷
凍機(ダイキン工業製)を用いた。結果を比較例(工r
添加無し、添加量が適正範囲外のもの)と共に第1表に
示した。
After the obtained superconducting thin film was patterned by ion beam etching, the critical current density was measured by a four-terminal method. The measurement atmosphere was He gas (He has good thermal conductivity and can uniformize the sample temperature, and is inert and can prevent sample deterioration.) The measurement temperature was 55℃, and a cryogenic refrigerator (manufactured by Daikin Industries) was used for cooling. ) was used. Comparative example (engineering) of the results
Table 1 shows cases in which no addition was made and cases in which the amount added was outside the appropriate range).

第1表 表より判るように実際の応用にはまだ僅か足りないもの
もあるがBi−5r−Ca−Cu系超伝導材料にIrを
添加することより顕著に臨界電流密度が向上している。
As can be seen from Table 1, the critical current density is significantly improved by adding Ir to the Bi-5r-Ca-Cu superconducting material, although it is still slightly insufficient for actual applications.

これはIrの添加により電流を阻害する第2相の析出を
抑制しているためと薄膜を平滑なものにしているためと
考えられる。
This is thought to be because the addition of Ir suppresses the precipitation of a second phase that inhibits current flow and because the thin film is made smooth.

尚添加量はI r / Cuの比で0.005〜0.0
8の範囲内が好ましい。添加量は少ないと効果はなく、
多すぎると超伝導物質の構造を破壊するため逆に臨界電
流密度は低下する。
The amount added is 0.005 to 0.0 in terms of Ir/Cu ratio.
It is preferably within the range of 8. If the amount added is small, it will not be effective.
If it is too large, the structure of the superconducting material will be destroyed, and the critical current density will decrease.

また臨界電流密度向上の上でも役立っている平滑性向上
は前にも述べたようにデバイス化の上でも良い結果をも
たらす。
Furthermore, the improvement in smoothness, which is also useful in increasing the critical current density, also brings about good results in terms of device fabrication, as mentioned earlier.

実施例では薄膜に於て述べたが線材やバルクでも効果は
同じであり何等差し支えない。但し値段が高いため材料
使用量の少ない薄膜の方が適しているといえる。また高
臨界温度相の安定化のためpbで置換した系でも効果は
同じであり何等差し支えない。
In the embodiments, a thin film was described, but the same effect can be achieved with a wire rod or a bulk film, and there is no problem. However, since it is expensive, thin films that require less material are more suitable. Furthermore, a system in which pb is substituted to stabilize the high critical temperature phase has the same effect and there is no problem.

[発明の効果] 以上述べたように本発明によれば結晶の粒界部に析出し
電流を阻害する第2相を抑制すると共に材料を平滑化出
来るため製造コストの安い多結晶体でも高い臨界電流密
度を得ることが出来る。またデバイス化に必要な表面モ
ホロジーも良くなる。
[Effects of the Invention] As described above, according to the present invention, it is possible to suppress the second phase that precipitates at the grain boundaries of crystals and inhibit current flow, and to smooth the material, so even polycrystalline materials with low production costs can have high criticality. Current density can be obtained. In addition, the surface morphology required for device fabrication also improves.

尚この材料は配線、電磁波センサー 磁束メモリ、ジョ
セフソン素子、超伝導トランジスタ、磁気シールド材、
送電ケーブル、通信ケーブル、超伝導モータ、超伝導マ
グネット等に応用できる。
This material is used for wiring, electromagnetic wave sensors, magnetic flux memory, Josephson elements, superconducting transistors, magnetic shielding materials,
It can be applied to power transmission cables, communication cables, superconducting motors, superconducting magnets, etc.

以上 出願人 セイコーエプソン株式会社 代理人弁理士 鈴木喜三部 他1名that's all Applicant: Seiko Epson Corporation Representative Patent Attorney Kizobe Suzuki and 1 other person

Claims (1)

【特許請求の範囲】 1)Bi−Sr−Ca−Cu−O系またはBi−Pb−
Sr−Ca−Cu−O系超伝導物質にIrを添加したこ
とを特徴とするBi系超伝導材料。 2)Ir/Cuは0.005〜0.08の範囲内である
ことを特徴とする特許請求の範囲第1項記載のBi系超
伝導材料。
[Claims] 1) Bi-Sr-Ca-Cu-O system or Bi-Pb-
A Bi-based superconducting material characterized by adding Ir to a Sr--Ca--Cu--O-based superconducting material. 2) The Bi-based superconducting material according to claim 1, wherein Ir/Cu is within the range of 0.005 to 0.08.
JP2181206A 1990-07-09 1990-07-09 Bi-system superconductive material Pending JPH0474716A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2181206A JPH0474716A (en) 1990-07-09 1990-07-09 Bi-system superconductive material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2181206A JPH0474716A (en) 1990-07-09 1990-07-09 Bi-system superconductive material

Publications (1)

Publication Number Publication Date
JPH0474716A true JPH0474716A (en) 1992-03-10

Family

ID=16096690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2181206A Pending JPH0474716A (en) 1990-07-09 1990-07-09 Bi-system superconductive material

Country Status (1)

Country Link
JP (1) JPH0474716A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113957394A (en) * 2021-09-27 2022-01-21 山东省科学院能源研究所 P-type semiconductor film bismuth copper oxide and preparation method and application thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113957394A (en) * 2021-09-27 2022-01-21 山东省科学院能源研究所 P-type semiconductor film bismuth copper oxide and preparation method and application thereof
CN113957394B (en) * 2021-09-27 2023-09-26 山东省科学院能源研究所 P-type semiconductor thin film bismuth copper oxide and preparation method and application thereof

Similar Documents

Publication Publication Date Title
Kırat et al. Effect of the Er-substitution on critical current density in glass-ceramic Bi2Sr2Ca2 (Cu3− xErx) O10+ δ superconducting system
JPH0474714A (en) TI superconducting material
EP0800494B1 (en) LOW TEMPERATURE (T LOWER THAN 950 oC) PREPARATION OF MELT TEXTURE YBCO SUPERCONDUCTORS
Comert et al. The effect of Ag diffusion on the crystal structure and electrical properties of Bi (Pb) SrCaCuO superconductors
JPH0474716A (en) Bi-system superconductive material
EP0293836B1 (en) Method for preparing thin film of superconductor
JP2975608B2 (en) Insulating composition
JP2501035B2 (en) Superconducting thin film
JPH0467691A (en) TI superconducting material
JPH01167221A (en) Production of superconducting thin film
Ni et al. Relationship between MgO particles addition and critical current density in Bi-2212 thick film grown on oxidized Ni substrate
JPH0412024A (en) Bi-based superconductive material
JPH0474717A (en) Bi-based superconducting material
JPH0474718A (en) Bi-based superconducting material
JP2544759B2 (en) How to make a superconducting thin film
Liu et al. Superconductivity above 130 K in Tl1− xHgxBa2Ca2Cu3O8+ δ
JPH0412027A (en) Bi-based superconductive material
JP2966119B2 (en) Manufacturing method of oxide superconductor
JPH0412017A (en) Tl superconductor material
JP2544761B2 (en) Preparation method of superconducting thin film
JP2544760B2 (en) Preparation method of superconducting thin film
JPH0412028A (en) TI-based superconducting material
JP2778119B2 (en) Composite oxide superconducting thin film and method for forming the same
JPH01227480A (en) Method for manufacturing superconducting thin film
JPH0829938B2 (en) Composite oxide superconducting thin film and method for producing the same