JPH0476061B2 - - Google Patents
Info
- Publication number
- JPH0476061B2 JPH0476061B2 JP59161826A JP16182684A JPH0476061B2 JP H0476061 B2 JPH0476061 B2 JP H0476061B2 JP 59161826 A JP59161826 A JP 59161826A JP 16182684 A JP16182684 A JP 16182684A JP H0476061 B2 JPH0476061 B2 JP H0476061B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- sensitive
- junctions
- junction
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、熱赤外線計測において、熱赤外発生
部の面積を熱赤外量で検知することにより、熱赤
外発生部の位置情報を得るための赤外線検出素子
に関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention is for obtaining positional information of a thermal infrared generating part by detecting the area of the thermal infrared generating part by the amount of thermal infrared rays in thermal infrared measurement. This invention relates to an infrared detection element.
従来例の構成とその問題点
従来の熱電堆型赤外線検出素子の構成を第１図
に示す。基板薄膜４の上に二種類の金属薄層１，
２が図の様に交互にジグザグ状に配置されてい
る。感温接合部６の上に赤外吸収層３が配置され
ている。基準接合部７は、左右の支持台５の上部
の基板薄膜４上に配置されていて、赤外線が入射
しても昇温しないようになつている。赤外吸収層
３に赤外線が照射されると感温接合部６は昇温
し、基準接合部７との温度差に相当した起電力
が、ゼーベツク効果により信号取出電極８に発生
する。ここで、赤外吸収層３の一部に微少面積の
点状赤外線を照射すると、その照射位置によつて
発生する起電力が異なる。即ち、感温接合部６に
近い位置では発生起電力は高くなる。Structure of a conventional example and its problems The structure of a conventional thermopile type infrared detection element is shown in FIG. Two types of metal thin layers 1 on the substrate thin film 4,
2 are arranged alternately in a zigzag pattern as shown in the figure. An infrared absorption layer 3 is arranged on the temperature-sensitive junction 6. The reference joint part 7 is arranged on the substrate thin film 4 on the upper part of the left and right support stands 5, and is designed not to increase in temperature even if infrared rays are incident thereon. When the infrared absorption layer 3 is irradiated with infrared rays, the temperature of the temperature-sensitive junction 6 rises, and an electromotive force corresponding to the temperature difference with the reference junction 7 is generated in the signal extraction electrode 8 due to the Seebeck effect. Here, when a part of the infrared absorbing layer 3 is irradiated with point-like infrared rays having a small area, the electromotive force generated differs depending on the irradiation position. That is, the generated electromotive force becomes high at a position close to the temperature-sensitive junction 6.
従つて、従来の熱電堆型赤外線検出素子は面内
感度の不均一性が大きいという欠点を有してい
る。そのため、赤外照射面積計測検出器として使
用する場合は、その感温接合部６をなるべく一点
に集中配置するような円型構造とし、これに赤外
集光器としてオプチカルコーンを組合せて使用す
る方法などが採用されている。 Therefore, the conventional thermopile-type infrared detection element has a drawback of large non-uniformity in in-plane sensitivity. Therefore, when used as an infrared irradiation area measurement detector, the temperature-sensitive junction 6 should be arranged in a circular structure so as to be concentrated at one point as much as possible, and an optical cone should be used in combination with this as an infrared condenser. methods are being adopted.
第２図がその構成の一例であるが、入射赤外線
はオプチカルコーン２２の入口部の仮想面上で像
を結ぶようにしてあり、この仮想面で赤外発生部
の面積に対応した赤外線を受け入れることにな
る。入射した赤外線は、オプチカルコーン２２の
内部鏡面で反射されて、全て最終的には熱電堆２
０の感温接合部を覆つている赤外吸収層２１に到
達する。 Figure 2 shows an example of its configuration, in which the incident infrared rays form an image on a virtual plane at the entrance of the optical cone 22, and this virtual plane receives infrared rays corresponding to the area of the infrared generating part. It turns out. The incident infrared rays are reflected by the internal mirror surface of the optical cone 22, and all of them finally reach the thermoelectric stack 2.
The infrared absorbing layer 21 covering the temperature sensitive junction of 0 is reached.
このような構成にすれば、赤外線吸収層２１で
の赤外線はほゞ均一に分布するので、面内不均一
の欠点を解決することができる。 With this configuration, the infrared rays in the infrared absorbing layer 21 are distributed almost uniformly, so that the drawback of in-plane non-uniformity can be solved.
しかし、余分なオプチカルコーン２２を採用し
なければならば、これは検出部の寸法増大につな
がる。更に赤外結像面が大きくなるので、光学設
計にも大きな影響を与える。即ち、同一分解能を
達成しようとすれば、結像面が大きいほど焦点距
離の長い光学系が必要となり、同一の明るさを達
成しようとすれば、口径の大きな集光径が必要と
なる。 However, if an extra optical cone 22 has to be employed, this will lead to an increase in the size of the detection section. Furthermore, since the infrared imaging surface becomes larger, it also has a large impact on optical design. That is, if the same resolution is to be achieved, the larger the imaging plane is, the longer the focal length of the optical system is required, and if the same brightness is to be achieved, a larger aperture is required.
発明の目的
本発明は、熱電堆型赤外線検出素子における面
内感度不均一性を解消し、オプチカルコーン等の
光学的設計上の制約となるような構成要素を用い
ずに赤外照射面積計測が可能な熱電堆型赤外線検
出素子を実現することを目的とする。Purpose of the Invention The present invention eliminates in-plane sensitivity non-uniformity in thermopile-type infrared detection elements, and enables infrared irradiation area measurement without using components such as optical cones that restrict optical design. The aim is to realize a thermopile-type infrared detection element that is possible.
発明の構成
本発明は、基板薄膜上に二種類の金属薄層が交
互にその両端が重なるように電気的に直列に配置
され、感温接合部と基準接合部とがひとつおきに
形成された熱電堆型赤外線検出素子において、
前記感温接合部を各々隣り合うよう凡そ直線上
に配列し且つその両端に前記基準接合部を分離配
置し、また
前記感温接合部を前記直線配列方向に対して一
定方向となる斜めの分離帯で分離し、しかも
一本の分離帯が終わるところの反対側の辺で次
の分離帯が始まるよう形成することによつて、
前記直線配列方向に直交する方向での当該感温
接合部の幅が同一となるよう構成したものであ
る。Structure of the Invention The present invention is characterized in that two types of metal thin layers are electrically arranged in series on a substrate thin film so that their ends overlap alternately, and a temperature-sensitive junction and a reference junction are formed every other. In the thermopile-type infrared detection element, the temperature-sensitive junctions are arranged approximately in a straight line so as to be adjacent to each other, and the reference junctions are arranged separately at both ends thereof, and the temperature-sensitive junctions are arranged in a direction in which the temperature-sensing junctions are arranged in the linear arrangement direction. By forming the partitions so that they are separated by diagonal separation strips that are aligned in a certain direction, and the next separation strip begins on the opposite side where one separation strip ends, the direction perpendicular to the linear arrangement direction is The widths of the temperature-sensitive joints are the same.
実施例の説明
以下本発明の実施例について図面とともに詳細
に説明する。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
本発明による熱電堆型赤外線検出素子の構成を
第３図に示す。ゼーベツタ効果を有する二種類の
金属薄層３１，３２の感温接合部３６は基板薄膜
３４の中央部にほゞ長方形に集合配置されその全
面を相隣る感温接合部３６の間の間隙も含めて、
赤外吸収層３３がおおつている。 The structure of the thermopile type infrared detection element according to the present invention is shown in FIG. The temperature-sensitive junctions 36 of two types of metal thin layers 31 and 32 having a Seebetsu effect are arranged in a substantially rectangular manner in the center of the substrate thin film 34, and the entire surface is covered with gaps between adjacent temperature-sensing junctions 36. Including,
An infrared absorbing layer 33 is covered.
感温接合部３６の間隙３９は感温接合部３６の
配列方向（第３図のたて方向）に対して傾斜した
斜め方向に延びるように配置され、一本の斜め間
隙３９が終るところの反対側の辺で、次の斜め間
隙３９がはじまるように形成すれば、感温接合部
の配列方向に直交する方向（第３図ａの横方向）
での巾はどの部分でも一定である。例えば第３図
ａのＢ−B′でのその巾は、ほゞ中央に分離帯３
９があるので、その左右の感温接合部分の巾の和
であるが、このＢ−B′の位置が、長方形の感温
接合部集合体のどの位置にあつても一定である。 The gaps 39 of the temperature-sensitive joints 36 are arranged so as to extend in an oblique direction with respect to the arrangement direction of the temperature-sensing joints 36 (vertical direction in FIG. If the next diagonal gap 39 is formed to start on the opposite side, the direction perpendicular to the arrangement direction of the temperature-sensitive joints (horizontal direction in Figure 3a)
The width is constant in all parts. For example, the width at B-B' in Figure 3a is approximately the same as the separation strip 3 in the center.
9, this is the sum of the widths of the left and right temperature-sensitive joint parts, and the position of B-B' is constant no matter where it is in the rectangular temperature-sensitive joint assembly.
従つて、このような構成の赤外線検出素子はＢ
−B′線に相当する線状赤外線光源を観測する場
合又は、赤外光源が二次元面でその端部がＢ−
B′線に相当する条件の時は、Ｂ−B′に直交する
方向の感度分布を一定にすることが可能である。 Therefore, the infrared detection element with such a configuration is B
- When observing a linear infrared light source corresponding to the B' line, or when the infrared light source is a two-dimensional surface and its end is B-
Under conditions corresponding to line B', it is possible to make the sensitivity distribution in the direction orthogonal to B-B' constant.
次に具体的実施例を説明する。 Next, specific examples will be described.
二種類の金属薄層３１，３２はビスマスとアン
チモンとし、基板薄膜３４は５〜50μｍの耐熱性
有機フイルム、例えば厚さ20μｍのカプトンフイ
ルムとし、支持台３５は銅ブロツク、信号取出電
極３８は金の蒸着膜とする。 The two metal thin layers 31 and 32 are made of bismuth and antimony, the substrate thin film 34 is a heat-resistant organic film with a thickness of 5 to 50 μm, for example, a Kapton film with a thickness of 20 μm, the support base 35 is a copper block, and the signal extraction electrode 38 is made of gold. The vapor-deposited film is as follows.
ビスマフ、アンチモンの各薄層３１，３２は蒸
着によつて形成された薄層で、感温接合部３６の
寸法はＢ−B′方向が0.1mm直交する方向が0.08mm、
不感帯の分離部３９は感温接合部３６の直列配列
方向およびその直角方向のいずれに対しても0.02
mm以下である。又両端は、Ｂ−B′方向及びそれ
に直交する方向が各々共に、0.08mmの二等辺直角
三角形状とする。感温接合部３６の数は31ヶとす
る。 The bismuth and antimony thin layers 31 and 32 are thin layers formed by vapor deposition, and the dimensions of the temperature-sensitive junction 36 are 0.08 mm in the direction perpendicular to the B-B' direction by 0.1 mm;
The separation part 39 of the dead zone is 0.02 in both the series arrangement direction of the temperature-sensitive junction parts 36 and the perpendicular direction thereof.
mm or less. Also, both ends are in the shape of an isosceles right triangle with a diameter of 0.08 mm in both the B-B' direction and the direction perpendicular thereto. The number of temperature-sensitive junctions 36 is 31.
このような形状、寸法、配置により、感温接合
部集合体は0.1mm×2.98mmの直方形を形成するこ
とになる。 With such shape, dimensions, and arrangement, the temperature-sensitive junction assembly forms a rectangular parallelepiped of 0.1 mm x 2.98 mm.
Ｂ−B′方向の感温接合部の巾は0.08mmである。
基準接合部３７の数は30ヶで、左右に15ヶづつ配
置され、その寸法は0.06mm×0.18mmである。Ｂ−
B′に直交する方向は、感温接合部３６の寸法形
状から、0.18mmに決定される。Ｂ−B′方向につい
ては、設計上自由度があり、最適な数値を選択す
る余地がある。 The width of the temperature-sensitive joint in the B-B' direction is 0.08 mm.
The number of reference joints 37 is 30, 15 on each side, and the dimensions are 0.06 mm x 0.18 mm. B-
The direction perpendicular to B' is determined to be 0.18 mm based on the dimensions and shape of the temperature-sensitive joint 36. Regarding the B-B' direction, there is a degree of freedom in design, and there is room to select an optimal value.
感温接合部集合パターン上には、赤外吸収層３
３であるカーボン微粉をバインダーで混合した黒
化剤を30μｍ塗布する。 An infrared absorbing layer 3 is placed on the temperature-sensitive junction assembly pattern.
A blackening agent prepared by mixing fine carbon powder with a binder (3) is applied to a thickness of 30 μm.
このようにして作成した熱電堆型赤外線検出素
子に、波長15μｍ帯の線状赤外ビーム（ビーム巾
30μｍ）を照射して、感温接合部３６の直列並び
方向（Ｂ−B′に直交する方向）の感度均一性を
測定したところ、そのバラツキは、0.5％以内で
あつた。 A linear infrared beam with a wavelength of 15 μm (beam width
When the sensitivity uniformity in the direction in which the temperature-sensitive junctions 36 were arranged in series (direction perpendicular to B-B') was measured by irradiating the temperature-sensitive junctions 36 with a wavelength of 30 μm, the variation was within 0.5%.
これは、従来の100μｍピツチの熱電堆型赤外
線検出素子のバラツキ20％より1.5桁低い値で、
充分感度均一性が達成されたといえる。 This is 1.5 orders of magnitude lower than the 20% variation of conventional 100 μm pitch thermopile type infrared detection elements.
It can be said that sufficient sensitivity uniformity was achieved.
尚バラツキの評価条件としては、波長15μｍの
２倍の30μｍ幅は、実現可能な最小幅に近く、こ
の幅で、３mm長さの素子を評価したということは
３mm／0.03mm＝100本の分解能を確保している点
から考えても、ほゞ妥当な評価基準といえる。 As for the evaluation conditions for variation, a width of 30 μm, which is twice the wavelength of 15 μm, is close to the minimum width that can be achieved. This means that a 3 mm long element was evaluated with this width, which means that the resolution is 3 mm/0.03 mm = 100 lines. It can be said that this is a fairly appropriate evaluation standard considering that the
発明の効果
以上のように、本発明は、基板薄膜上に二種類
の金属薄層が交互にその両端が重なるように電気
的に直列に配置され、感温接合部と基準接合部と
がひとつおきに形成された熱電堆型赤外線検出素
子において、
前記感温接合部を各々隣り合うよう凡そ直線上
に配列し且つその両端に前記基準接合部を分離配
置し、また
前記感温接合部を前記直線配列方向に対して一
定方向となる斜めの分離帯で分離し、しかも
一本の分離帯が終わるところの反対側の辺で次
の分離帯が始まるよう形成することによつて、
前記直線配列方向に直交する方向での当該感温
接合部の幅が同一となるよう構成することによ
り、面内感度の不均一性の少ない小型の赤外線検
出素子を得ることができる。Effects of the Invention As described above, in the present invention, two types of metal thin layers are arranged electrically in series on a substrate thin film so that their ends overlap alternately, and one temperature-sensitive junction part and one reference junction part are formed. In the thermopile-type infrared detection element formed at intervals, the temperature-sensitive junctions are arranged approximately on a straight line so as to be adjacent to each other, and the reference junctions are arranged separately at both ends thereof, and The linear array is separated by a diagonal separation strip that is in a constant direction with respect to the linear arrangement direction, and is formed so that the next separation strip starts on the opposite side where one separation strip ends. By configuring the temperature-sensitive junction portion to have the same width in the direction perpendicular to the direction, a compact infrared detection element with less non-uniformity in in-plane sensitivity can be obtained.
第１図ａ，ｂは従来の熱電堆型赤外線検出素子
の一例を示す平面図およびそのＡ−A′断面図、
第２図は従来の熱電堆型赤外線検出素子の使用例
を示す概略断面図、第３図ａ，ｂは本発明による
熱電堆型赤外線検出素子の実施例を示す平面図お
よびそのＡ−A′断面図である。
１，３１……金属薄層、２，３２……金属薄
層、３，２１，３３……赤外吸収層、４，３４…
…基板薄膜、５，３５……基板薄膜支持台、６，
３６……感温接合部、７，３７……基準接合部、
８，３８……信号取出し電極、３９……分離帯。
Figures 1a and 1b are a plan view showing an example of a conventional thermopile-type infrared detection element and a sectional view taken along line A-A';
FIG. 2 is a schematic sectional view showing an example of the use of a conventional thermopile-type infrared detection element, and FIGS. 3a and 3b are plan views showing an example of the thermopile-type infrared detection element according to the present invention, and its A-A' FIG. 1, 31... Metal thin layer, 2, 32... Metal thin layer, 3, 21, 33... Infrared absorption layer, 4, 34...
...Substrate thin film, 5,35...Substrate thin film support, 6,
36... Temperature-sensitive junction, 7, 37... Reference junction,
8, 38... Signal extraction electrode, 39... Separation band.
Claims (1)
両端が重なるように電気的に直列に配置され、感
温接合部と基準接合部とがひとつおきに形成され
た熱電堆型赤外線検出素子において、 前記感温接合部を各々隣り合うよう凡そ直線上
に配列し且つその両端に前記基準接合部を分離配
置し、また 前記感温接合部を前記直線配列方向に対して一
定方向となる斜めの分離帯で分離し、しかも 一本の分離帯が終わるところの反対側の辺で次
の分離帯が始まるよう形成することによつて、 前記直線配列方向に直交する方向での当該感温
接合部の幅が同一となるよう構成したことを特徴
とする熱電堆型赤外線検出素子。[Claims] 1. Two types of thin metal layers are electrically arranged in series on a substrate thin film so that their ends overlap, and a temperature-sensitive junction and a reference junction are formed every other. In the thermopile-type infrared detection element, the temperature-sensitive junctions are arranged approximately in a straight line so as to be adjacent to each other, and the reference junctions are arranged separately at both ends thereof, and the temperature-sensitive junctions are arranged in a direction in which the temperature-sensing junctions are arranged in the linear arrangement direction. By forming the partitions so that they are separated by diagonal separation strips that are aligned in a certain direction, and the next separation strip begins on the opposite side where one separation strip ends, the direction perpendicular to the linear arrangement direction is 1. A thermopile-type infrared detecting element, characterized in that the widths of the temperature-sensitive junctions are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16182684A JPS6140522A (en) | 1984-08-01 | 1984-08-01 | Thermocouple type infrared detection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16182684A JPS6140522A (en) | 1984-08-01 | 1984-08-01 | Thermocouple type infrared detection element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6140522A JPS6140522A (en) | 1986-02-26 |
| JPH0476061B2 true JPH0476061B2 (en) | 1992-12-02 |
Family
ID=15742644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16182684A Granted JPS6140522A (en) | 1984-08-01 | 1984-08-01 | Thermocouple type infrared detection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6140522A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0815764B2 (en) * | 1990-08-13 | 1996-02-21 | ミサワホーム株式会社 | Lightweight concrete panel manufacturing method |
-
1984
- 1984-08-01 JP JP16182684A patent/JPS6140522A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6140522A (en) | 1986-02-26 |
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