JPH0476407A - Film thickness measuring device - Google Patents
Film thickness measuring deviceInfo
- Publication number
- JPH0476407A JPH0476407A JP18964290A JP18964290A JPH0476407A JP H0476407 A JPH0476407 A JP H0476407A JP 18964290 A JP18964290 A JP 18964290A JP 18964290 A JP18964290 A JP 18964290A JP H0476407 A JPH0476407 A JP H0476407A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor substrate
- film thickness
- speedlight
- spectroscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000001228 spectrum Methods 0.000 claims abstract description 17
- 238000005259 measurement Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 abstract description 22
- 239000010409 thin film Substances 0.000 abstract description 13
- 238000007599 discharging Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は膜厚測定装置に関し、特に反射干渉型膜厚測定
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a film thickness measuring device, and particularly to a reflective interference type film thickness measuring device.
半導体基板、あるいは金属基板上に形成されたシリコン
酸化膜、シリコン窒化膜等の薄膜の膜厚を測定する装置
として、光の反射干渉を用いる装置が用いられる。2. Description of the Related Art A device that uses reflection interference of light is used to measure the thickness of a thin film such as a silicon oxide film or a silicon nitride film formed on a semiconductor substrate or a metal substrate.
従来の膜厚測定装置を図面を用いて説明する。A conventional film thickness measuring device will be explained using drawings.
第３図は従来の膜厚測定装置の原理図を示す。FIG. 3 shows a principle diagram of a conventional film thickness measuring device.
図において、半導体基板３１はχ−Ｙステージ３２上に
固定され、Ｘ−Ｙステージ３２により半導体基板３１が
移動される。膜厚測定は以下のように行われる。In the figure, a semiconductor substrate 31 is fixed on a χ-Y stage 32, and the semiconductor substrate 31 is moved by the X-Y stage 32. Film thickness measurement is performed as follows.
すなわち、白熱灯３３から放射された光は半透明鏡３４
で反射された後、対物レンズ３５で集束され、半導体基
板３】の薄膜上に達する。半導体基板３］の表面におい
ては、薄膜上で反射した光と薄膜及び半導体基板の界面
で反射した光との間で干渉が生じる。この干渉した光の
スペクトルは薄膜の光学的性質と膜厚によって一義的に
定まる。ところで、薄膜の光学的性質は既知であるので
、光の干渉スペクトルから膜厚が算出できる。第３図に
おいて、半導体基板３１からの干渉光は半透明鏡３４を
通り分光器３６において干渉スペクトルに分光させる。That is, the light emitted from the incandescent lamp 33 passes through the semi-transparent mirror 34.
After being reflected, the light is focused by the objective lens 35 and reaches the thin film of the semiconductor substrate 3. On the surface of the semiconductor substrate 3], interference occurs between the light reflected on the thin film and the light reflected at the interface between the thin film and the semiconductor substrate. The spectrum of this interfered light is uniquely determined by the optical properties and thickness of the thin film. By the way, since the optical properties of the thin film are known, the film thickness can be calculated from the optical interference spectrum. In FIG. 3, interference light from a semiconductor substrate 31 passes through a semi-transparent mirror 34 and is separated into interference spectra by a spectrometer 36.
干渉スペクトルは分光器３６内に設置された電荷結合素
子３７で検知され、演算器３８において、膜厚が算出さ
れる。The interference spectrum is detected by a charge-coupled device 37 installed in a spectrometer 36, and a calculation unit 38 calculates the film thickness.
［発明が解決しようとする課題］
この従来の膜厚測定器においては、光源として連続発光
の白熱灯３３を用いるため、光量が少なく、膜厚測定を
高精度にするためには半導体基板３１上に１秒程度以上
連続照射する必要がある。また、半導体基板３１上の多
点測定を行う場合には、Ｘ−Ｙステージ３２を用いて移
動させるが、移動・停止の動作に約２秒を要する。従っ
て、合計３秒程度は最低限必要となるので、例えば半導
体基板面内２００点を測定する場合は、１０分間という
長時間を有するという問題があった。[Problems to be Solved by the Invention] This conventional film thickness measuring device uses a continuous light emitting incandescent lamp 33 as a light source, so the amount of light is small, and in order to make film thickness measurement highly accurate, it is necessary to It is necessary to continuously irradiate for about 1 second or more. Further, when performing multi-point measurement on the semiconductor substrate 31, the X-Y stage 32 is used to move it, but it takes about 2 seconds to move and stop the movement. Therefore, since a total of about 3 seconds is the minimum required, for example, when measuring 200 points on a semiconductor substrate, there is a problem that it takes a long time of 10 minutes.
本発明の目的は、測定時間を短縮させた膜厚測定装置を
提供することにある。An object of the present invention is to provide a film thickness measuring device that reduces measurement time.
〔課題を解決するための手段］
前記目的を達成するため、本発明に係る膜厚測定装置に
おいては、スピードライトと、半透明鏡と、第１及び第
２の分光器の組と、演算部とを有する膜厚測定装置であ
って、
スピードライトは、電源に蓄積された電荷を放電させる
ことにより、パルス状の光を発光するものであり、
半透明鏡は、スピードライトからの光を半導体基板と第
１の分光器とに分配するものであり、第１の分光器は、
スピードライトの光を分光するものであり、
第２の分光器は、半導体基板での反射光を分光するもの
であり、
演算部は、第１及び第２の分光器からの出力信号に基づ
いて半導体基板の膜厚を算出するものである。[Means for Solving the Problem] In order to achieve the above object, the film thickness measuring device according to the present invention includes a speedlight, a semi-transparent mirror, a set of first and second spectrometers, and a calculation section. The speedlight emits pulsed light by discharging the charge accumulated in the power supply, and the semi-transparent mirror connects the light from the speedlight to the semiconductor substrate and the film thickness measuring device. 1 spectrometer, and the first spectrometer is
The second spectroscope spectrally spectra the light from the speedlight, the second spectrometer spectrally spectrally reflects the light reflected by the semiconductor substrate, and the calculation section spectrally spectra the light from the semiconductor substrate based on the output signals from the first and second spectrometers. This is to calculate the film thickness of the substrate.
［作用］
光源としてスピードライト１３を用いる。スピードライ
ト１３は、電源１４に蓄積された電荷を一定量放電する
ことにより、パルス状の光を発する。スピードライト１
３は高速照射を行うものであり、例えば１秒毎に１点の
膜厚測定となる。[Function] A speedlight 13 is used as a light source. The speedlight 13 emits pulsed light by discharging a certain amount of charge accumulated in the power supply 14. speedlight 1
3 performs high-speed irradiation, and for example, the film thickness is measured at one point every second.
［実施例］ 次に本発明について図面を参照して説明する。[Example] Next, the present invention will be explained with reference to the drawings.
（実施例１） 第１図は本発明の実施例１を示す構成図である。(Example 1) FIG. 1 is a configuration diagram showing a first embodiment of the present invention.
図において、半導体基板１１はＸ−Ｙステージ１２上に
支持される。本発明においては、光源としてパルス状に
発光するスピードライトが用いられる。In the figure, a semiconductor substrate 11 is supported on an XY stage 12. In the present invention, a speedlight that emits pulsed light is used as a light source.
スピードライト１３は電源１４に蓄積された電荷を一定
量放電させることにより、パルス状の光を発する。この
スピードライト１３からの光は半透明鏡１５によって−
・部は対物レンズ１６を通して半導体基板１１に集束し
、一部は第１の分光器１７に集束される。The speedlight 13 emits pulsed light by discharging a certain amount of charge accumulated in the power supply 14. The light from this speedlight 13 is passed through a semi-transparent mirror 15.
* portion is focused on the semiconductor substrate 11 through the objective lens 16, and a portion is focused on the first spectrometer 17.
半導体基板１１に集束された光は、半導体基板表面の薄
膜において反射されるが、その反射光のスペクトルは従
来技術の項で説明したように、薄膜の膜厚を反映した干
渉スペクトルとなる。この干渉スペクトルは半透明鏡１
５を通して、第２の分光器１９において分光され電荷結
合素子２０によって検知される。検知された信号は演算
器２１において膜厚が算出される。なお、スピードライ
ト１３の光は、間欠的な発光であるので、毎回の発光に
おいて、強度やスペクトルにおいて若干の変動が見られ
る。The light focused on the semiconductor substrate 11 is reflected by the thin film on the surface of the semiconductor substrate, and the spectrum of the reflected light becomes an interference spectrum reflecting the thickness of the thin film, as explained in the section of the prior art. This interference spectrum is expressed by the semi-transparent mirror 1
5, the light is dispersed in a second spectroscope 19 and detected by a charge-coupled device 20. The film thickness of the detected signal is calculated by a calculator 21. Note that since the light from the speedlight 13 is emitted intermittently, slight variations in intensity and spectrum are observed each time the light is emitted.
これを補正するために、第１の分光器１７を用いる。In order to correct this, the first spectrometer 17 is used.
第１の分光器１７において、スピードライト光の強度・
スペクトルを分光し、電荷結合素子１８において検知し
、前述した演算器２１にて、第２の分光器１９からの信
号を補正する。演算器２１はスピードライト１３の電源
】４の制御機能も有しており、Ｘ−Ｙステージ１２から
所定の位置を示すタイミング信号を得て、スピードライ
ト１３を発光させる。同時に、第１及び第２の分光器１
７．１９からの信号を基にして半導体基板ｌｌ上の薄膜
の膜厚を算出する。In the first spectroscope 17, the intensity of the speedlight light
The spectrum is separated, detected by the charge-coupled device 18, and the signal from the second spectrometer 19 is corrected by the arithmetic unit 21 described above. The arithmetic unit 21 also has a control function of power source 13 for the speedlight 13, and receives a timing signal indicating a predetermined position from the XY stage 12 to cause the speedlight 13 to emit light. At the same time, the first and second spectrometers 1
7. The thickness of the thin film on the semiconductor substrate 11 is calculated based on the signal from 19.
本発明においては、光源としてスピードライト１３を用
いるため、発光時間が例えば１００マイクロ秒と極めて
短く、かつ、光量も高精度測定を行うのに十分な量が得
られる。従って、半導体基板上１点の測定に要する時間
は演算を含めても１ミリ秒程度で完了する。更に、発光
時間が極めて短いため、Ｘ−Ｙステージ１２が移動中で
あっても、発光中は実質的に静止していると見なされる
。従って、Ｘ−Ｙステージ１２の移動と停止という繰返
し動作を行う必要がなく、移動させる動作だけでよく、
更に時間短縮が可能である。本発明によれば、例えば、
１秒毎に１点の膜厚測定が可能であり、半導体基板上の
薄膜で２００点の膜厚測定は２００秒で完了する。In the present invention, since the speedlight 13 is used as a light source, the light emission time is extremely short, for example, 100 microseconds, and a sufficient amount of light can be obtained for highly accurate measurement. Therefore, the time required to measure one point on a semiconductor substrate, including calculation, is completed in about 1 millisecond. Furthermore, since the light emission time is extremely short, even if the XY stage 12 is moving, it is considered to be substantially stationary during the light emission. Therefore, there is no need to repeatedly move and stop the X-Y stage 12, and only the movement is required.
Further time can be shortened. According to the invention, for example:
It is possible to measure the film thickness at one point every second, and it takes 200 seconds to measure the film thickness at 200 points on a thin film on a semiconductor substrate.
（実施例２）
第２図は本発明の実施例２における半導体基板の支持台
を示す構成図である。実施例１においては、半導体基板
を直交する２軸方向に移動させるＸ−Ｙステージ１２を
用いたが、本実施例においてはｒ−θステージを用いて
いる。(Example 2) FIG. 2 is a configuration diagram showing a support stand for a semiconductor substrate in Example 2 of the present invention. In the first embodiment, an X-Y stage 12 that moves the semiconductor substrate in two orthogonal axes directions was used, but in this embodiment, an r-θ stage is used.
第２図において、半導体基板２２を支持するθステージ
２３はモーター２４によって回転される。ｒステージ２
５は、θステージ２３を半導体基板２２の径方向に移動
させる。本実施例では、θステージ２３により半導体基
板２２を回転させつつ、ｒステージ２５によりθステー
ジ２３を半導体基板２２の径方向に移動させることによ
り、スピードライト１３により半導体基板２２上をスキ
ャンさせるもので、実施例１のＸ−Ｙステージ１２に比
較して高速でのスキャンが可能になるという利点がある
。In FIG. 2, a θ stage 23 supporting a semiconductor substrate 22 is rotated by a motor 24. As shown in FIG. r stage 2
5 moves the θ stage 23 in the radial direction of the semiconductor substrate 22. In this embodiment, the semiconductor substrate 22 is rotated by the θ stage 23, and the θ stage 23 is moved in the radial direction of the semiconductor substrate 22 by the r stage 25, so that the speedlight 13 scans the semiconductor substrate 22. It has an advantage over the XY stage 12 of the first embodiment in that it can scan at high speed.
［発明の効果］
以上説明したように本発明は、反射干渉型膜厚測定にお
いて、光源としてスピードライトを用いることにより、
薄膜の膜厚測定の高速化、及び各測定点の間の移動の高
速化が可能となり、多点測定の時間が大幅に短縮できる
という効果を有する。[Effects of the Invention] As explained above, the present invention uses a speedlight as a light source in reflection interference type film thickness measurement.
This has the effect of increasing the speed of measuring the thickness of a thin film and increasing the speed of movement between measurement points, thereby significantly shortening the time required for multi-point measurement.
また、スピードライト光源の強度とスペクトル監視用の
専用分光器を備えることにより、測定精度も従来技術以
上の水準に確保できる。Furthermore, by providing a dedicated spectrometer for monitoring the intensity and spectrum of the speedlight light source, measurement accuracy can be ensured at a level higher than that of conventional technology.
第１図は本発明の実施例１を示す構成図、第２図は本発
明の実施例２における半導体基板の支持台を示す構成図
、第３図は従来例を示す構成図である。
ＩＩ、２２．３１・・・半導体基板 １２．３２・・
・χ−Ｙステージ１３・・・スピードライト
１４・・・電源
１６．３５・・・対物レンズ
１８、２０．３７・・・電荷結合素子
２３・・・θステージ
２５・・・ｒステージ
３３・・・白熱灯
１５．３４・・・半透明鏡
＋７．１９．３６・・・分光器
２１．３８・・・演算器
２４・・・モーターFIG. 1 is a block diagram showing a first embodiment of the present invention, FIG. 2 is a block diagram showing a support stand for a semiconductor substrate in a second embodiment of the present invention, and FIG. 3 is a block diagram showing a conventional example. II, 22.31...Semiconductor substrate 12.32...
・χ-Y stage 13...Speedlight 14...Power source 16.35...Objective lens 18, 20.37...Charge coupled device 23...θ stage 25...R stage 33... Incandescent lamp 15.34...Semi-transparent mirror +7.19.36...Spectroscope 21.38...Arithmetic unit 24...Motor
Claims (1)
分光器の組と、演算部とを有する膜厚測定装置であって
、 スピードライトは、電源に蓄積された電荷を放電させる
ことにより、パルス状の光を発光するものであり、 半透明鏡は、スピードライトからの光を半導体基板と第
１の分光器とに分配するものであり、第１の分光器は、
スピードライトの光を分光するものであり、 第２の分光器は、半導体基板での反射光を分光するもの
であり、 演算部は、第１及び第２の分光器からの出力信号に基づ
いて半導体基板の膜厚を算出するものであることを特徴
とする膜厚測定装置。(1) A film thickness measurement device that includes a speedlight, a semi-transparent mirror, a set of first and second spectrometers, and a calculation section, and the speedlight measures , which emits pulsed light; the semi-transparent mirror distributes the light from the speedlight between the semiconductor substrate and the first spectrometer; the first spectrometer is
The second spectroscope spectrally spectra the light from the speedlight, the second spectrometer spectrally spectrally reflects the light reflected by the semiconductor substrate, and the calculation section spectrally spectra the light from the semiconductor substrate based on the output signals from the first and second spectrometers. A film thickness measuring device characterized in that it calculates the film thickness of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02189642A JP3120438B2 (en) | 1990-07-18 | 1990-07-18 | Film thickness measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02189642A JP3120438B2 (en) | 1990-07-18 | 1990-07-18 | Film thickness measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0476407A true JPH0476407A (en) | 1992-03-11 |
| JP3120438B2 JP3120438B2 (en) | 2000-12-25 |
Family
ID=16244728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02189642A Expired - Fee Related JP3120438B2 (en) | 1990-07-18 | 1990-07-18 | Film thickness measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3120438B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003114107A (en) * | 2001-10-04 | 2003-04-18 | Omron Corp | Film thickness measuring device |
| KR100456204B1 (en) * | 1999-12-28 | 2004-11-09 | 주식회사 포스코 | Measuring apparatus and method of oil film thickness for coil strip |
| JP2017174933A (en) * | 2016-03-23 | 2017-09-28 | 信越半導体株式会社 | Detection device and detection method |
-
1990
- 1990-07-18 JP JP02189642A patent/JP3120438B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100456204B1 (en) * | 1999-12-28 | 2004-11-09 | 주식회사 포스코 | Measuring apparatus and method of oil film thickness for coil strip |
| JP2003114107A (en) * | 2001-10-04 | 2003-04-18 | Omron Corp | Film thickness measuring device |
| JP2017174933A (en) * | 2016-03-23 | 2017-09-28 | 信越半導体株式会社 | Detection device and detection method |
| US10365227B2 (en) | 2016-03-23 | 2019-07-30 | Shin-Etsu Handotai Co., Ltd. | Detection device and detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3120438B2 (en) | 2000-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100797420B1 (en) | In-situ monitoring method and apparatus for plasma etching and deposition process using pulsed broadband light source | |
| KR102330413B1 (en) | Temperature measuring method, substrate processing system and component to be provided in substrate processing apparatus of the substrate processing system | |
| US5696383A (en) | Method and apparatus for measuring the curvature of wafers with beams of different wavelengths | |
| JP2571054B2 (en) | Exposure apparatus and element manufacturing method | |
| CN112513562A (en) | Measuring device for determining the distance between a laser processing head and a workpiece, laser processing system and method for determining the distance between a laser processing head and a workpiece | |
| JP6415931B2 (en) | Terahertz wave measuring apparatus and terahertz wave measuring method | |
| CN114252446B (en) | Detection device and detection method | |
| JP3947159B2 (en) | Sensor device for quick optical distance measurement according to the confocal optical imaging principle | |
| KR101764868B1 (en) | Apparatus of high speed white light scanning interferometer using dual coherence for high step height and thickness measurements | |
| JP3120438B2 (en) | Film thickness measuring device | |
| JPH095059A (en) | Flatness measuring device | |
| CN113251943A (en) | Measuring system and method based on light interference | |
| KR20200126550A (en) | Continuously measurable spectroscopic ellipsometer | |
| JPS59192904A (en) | Device for measuring film thickness | |
| US5523838A (en) | Optical wavemeter employing a length measuring machine with a white light source for achieving maximum interfering efficiency | |
| JPH03214043A (en) | Reflectance measurement method and device | |
| CN110749380A (en) | Device and method for measuring laser wavelength by using interference principle | |
| JPS6228606A (en) | Film thickness measuring instrument | |
| JPH08219733A (en) | Three-dimensional scanner | |
| JPH04115109A (en) | Surface-roughness measuring apparatus | |
| CN120651119A (en) | Wafer thickness measuring device and method | |
| US10539504B1 (en) | Method and apparatus for automating contact between an ATR crystal and a specimen | |
| JPH04106550A (en) | Projection exposing device and method | |
| JPH05133712A (en) | Surface position measuring device | |
| JPH1123229A (en) | Measuring method for film thickness |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |