JPH0476514B2 - - Google Patents
Info
- Publication number
- JPH0476514B2 JPH0476514B2 JP60264344A JP26434485A JPH0476514B2 JP H0476514 B2 JPH0476514 B2 JP H0476514B2 JP 60264344 A JP60264344 A JP 60264344A JP 26434485 A JP26434485 A JP 26434485A JP H0476514 B2 JPH0476514 B2 JP H0476514B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- aluminum nitride
- infrared
- adhesive
- surface roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 27
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は赤外線検出素子に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an infrared detection element.
テルル化水銀カドミウム（HgCdTe）は禁制帯
幅の狭い半導体であり、この単結晶を用いた高感
度の赤外線検出素子が知られている。これは基本
的には、第２図に示すように、基板１及び接着剤
３を介してこれに接着され、所定形状にパターン
加工されたHgCdTe単結晶からなる赤外線感応体
２、及び一対の電極配線４，５から構成されてお
り、赤外線感応体２に一定の駆動電流を流すこと
で、入射赤外線に応じた抵抗変化が両端電圧の変
化として出力されるものである。従つて駆動電流
が大きい程、出力も増加するのであるが、一方こ
の素子を有効に動作させるためには液体窒素温度
程度に冷却する必要があり、駆動電流はそれによ
る発熱が影響しない程度に制限される。このた
め、出力の大きい素子を得るためには熱伝導率の
大きい基板を使つて素子の冷却効率を高めること
が重要であり、そのような基板として、従来、例
えば、特公昭59−10594に示されているように、
サフアイア基板が使用されている。
Mercury cadmium telluride (H g C d Te ) is a semiconductor with a narrow bandgap, and highly sensitive infrared detection elements using this single crystal are known. As shown in FIG. 2, this basically consists of a substrate 1 and an infrared sensitive body 2 made of an H g C d T e single crystal that is bonded to this via an adhesive 3 and patterned into a predetermined shape. , and a pair of electrode wirings 4 and 5. By passing a constant drive current through the infrared sensitive body 2, a change in resistance according to the incident infrared rays is outputted as a change in voltage between both ends. Therefore, the larger the drive current, the higher the output.However, in order to operate this element effectively, it is necessary to cool it to about the temperature of liquid nitrogen, and the drive current is limited to an extent that the heat generated by it does not affect it. be done. Therefore, in order to obtain a device with a large output, it is important to use a substrate with high thermal conductivity to increase the cooling efficiency of the device. As has been said,
A sapphire substrate is used.
しかし、基板としてサフアイアを用いる場合、
基板とHgCdTe結晶とを接着する接着剤のサフア
イア基板への付着強度が十分ではなく、その上部
に形成された電極配線もろとも剥離して断線６が
生じる原因となつていた。すなわち、付着強度を
高めるためには表面が適当にあれていることが望
ましいが、サフアイアは単結晶のため、適度な表
面粗さをもたせるのは困難であり、十分な付着強
度が得られないのである。こうして、従来のもの
は製造良品率の向上が困難であるという問題点が
ある。
However, when using sapphire as a substrate,
The adhesion strength of the adhesive for bonding the substrate and the H g C d Te crystal to the sapphire substrate was not sufficient, which caused the electrode wiring formed thereon to peel off, resulting in disconnection 6 . In other words, it is desirable for the surface to be appropriately rough in order to increase adhesive strength, but since sapphire is a single crystal, it is difficult to provide an appropriate surface roughness, and sufficient adhesive strength cannot be obtained. be. Thus, the conventional method has a problem in that it is difficult to improve the production rate of non-defective products.
本発明の目的は、信頼性及び良品率の良好な赤
外線検出素子を提供することにある。 An object of the present invention is to provide an infrared detection element with good reliability and good yield rate.
本発明の赤外線検出素子は、窒化アルミニウム
焼結体からなる基板と、前記基板の一主面に接着
された所定形状の赤外線感応体と、前記赤外線感
応体に接触して設けられた少なくとも一対の電極
とを含んで構成される。
The infrared detecting element of the present invention includes a substrate made of an aluminum nitride sintered body, an infrared sensitive body of a predetermined shape adhered to one main surface of the substrate, and at least a pair of infrared sensitive bodies provided in contact with the infrared sensitive body. and an electrode.
窒化アルミニウム焼結体は粒径数100Åの窒化
アルミニウムの多結晶である。このため研磨した
窒化アルミニウムの表面粗さは数10から数100Å
となつており、またリン酸等によるエツチングを
行なえば1000Å程度の表面粗さのものを容易に実
現できる。こうした数100Åから100Åの表面粗さ
は接着剤の付着強度を増大させ、かつ、この上に
形成する電極配線（通常は厚さ5000Å程度）の導
通も十分保障する。更に、液体窒素温度77Kでの
窒化アルミニウム焼結体の熱伝導率は250W／
ｍ・Ｋ程度であり、サフアイアの値、約900W／
ｍ・Ｋよりも劣つているものの、他の焼結体材
料、例えはアルミナの値、約100W／ｍ・Ｋを上
回つている。これらの値を用い、接着剤層（厚さ
1μｍ）の熱抵抗の寄与を含めて、素子の駆動電
流による温度上昇を見積ると、同じ温度上昇を生
ずる駆動電流値はサフアイア基板を１として窒化
アルミニウム焼結体で約0.95、アルミナ基板で約
0.88となる。すなわち、同じ焼結体でもアルミナ
基板では素子出力はサフアイア基板のものに比較
して12％低下するのに対し、窒化アルミニウム基
板では５％程度の低下に留まつており、特性の低
下は少ない。また窒化アルミニウム焼結体はサフ
アイアやアルミナ程硬くなく、基板研磨や切断等
の加工性が良いという利点も持つている。
The aluminum nitride sintered body is a polycrystalline aluminum nitride with a grain size of several 100 Å. For this reason, the surface roughness of polished aluminum nitride ranges from several 10 to several 100 Å.
Moreover, by etching with phosphoric acid or the like, a surface roughness of about 1000 Å can be easily achieved. Such a surface roughness of several 100 Å to 100 Å increases the adhesion strength of the adhesive, and also sufficiently guarantees the conductivity of the electrode wiring (usually about 5000 Å thick) formed thereon. Furthermore, the thermal conductivity of aluminum nitride sintered body at liquid nitrogen temperature of 77K is 250W/
It is about m・K, and the value of Saffire is about 900W/
Although it is inferior to mK, it exceeds the value of other sintered materials, such as alumina, which is about 100W/mK. Using these values, determine the adhesive layer (thickness
When estimating the temperature rise due to the drive current of the element, including the contribution of the thermal resistance of 1 μm), the drive current value that causes the same temperature rise is 1 for the sapphire substrate, about 0.95 for the aluminum nitride sintered body, and about 0.95 for the alumina substrate.
It becomes 0.88. That is, even with the same sintered body, an alumina substrate results in a 12% reduction in device output compared to a sapphire substrate, whereas an aluminum nitride substrate results in a reduction of only about 5%, meaning that there is little deterioration in characteristics. Furthermore, the aluminum nitride sintered body is not as hard as sapphire or alumina, and has the advantage of being easy to work with, such as substrate polishing and cutting.
次に、本発明の実施例について図面を参照して
説明する。
Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。窒
化アルミニウム焼結体からなる基板１に、矩形状
にパターン加工されたHg0.2Cd0.8Te単結晶からな
る赤外線感応体２が接着剤３を介して接着されて
いる。赤外線感応体２の両端から外部へかけて電
極配線４，５が形成され、外部との電気接続がな
される。 FIG. 1 is a sectional view of an embodiment of the present invention. An infrared sensitive material 2 made of a rectangularly patterned H g0.2 C d0.8 T e single crystal is adhered to a substrate 1 made of a sintered aluminum nitride body through an adhesive 3 . Electrode wirings 4 and 5 are formed from both ends of the infrared sensitive body 2 to the outside to establish an electrical connection with the outside.
窒化アルミニウム焼結体からなる基板１の表面
粗さは500Å程度にしておく。接着剤３としては
耐薬品性にすぐれ、また低温にも耐えるエポキシ
樹脂接着剤、例えばスタイキヤスト1266（エマー
ソン・アンド・カミング（Emerson＆Cumming）
社の商品名）が適しており、上述の500Åの表面
粗さの基板面に対し、十分な付着強度が得られ
る。また、電極配線は厚さ500ÅのCr又はTiと厚
さ5000ÅのAuとを蒸着又はスパツタリングによ
つて被着して形成でき、こうした厚さにすること
で表面粗さ500Åの基板上でも導通不良を起すこ
とはない。尚、この窒化アルミニウム基板は荒削
り後に仕上研磨を行なつて反りやうねりのない平
滑な基板とした後、リン酸等によつてエツチング
を行ない、粒界部のエツチング速度が速いことを
利用して適当な表面粗さとすればよい。 The surface roughness of the substrate 1 made of an aluminum nitride sintered body is set to about 500 Å. The adhesive 3 is an epoxy resin adhesive that has excellent chemical resistance and is resistant to low temperatures, such as Stycast 1266 (Emerson & Cumming).
Company's product name) is suitable and can provide sufficient adhesion strength to the substrate surface with the above-mentioned surface roughness of 500 Å. Furthermore, electrode wiring can be formed by depositing Cr or Ti with a thickness of 500 Å and Au with a thickness of 5000 Å by vapor deposition or sputtering. However, it does not cause conduction defects. This aluminum nitride substrate is rough-machined and then finished polished to make it a smooth substrate with no warping or waviness, and then etched with phosphoric acid or the like, taking advantage of the high etching speed of grain boundaries. An appropriate surface roughness may be used.
次に、この赤外線検出素子と、従来のサフアイ
ア基板によるものとの製造の良品率を比較する。
基板の差異以外はすべて同じ条件で製造すると、
従来のものでは接着剤の部分的剥離による断線で
良品率は約50％程度であるのに対し、本発明のも
のではこれによる良品率の低下は殆どなく、他の
要因が支配的となり良品率は90％程度に改善され
る。また、素子としての出力特性を比較した結果
は、従来のサフアイア基板の素子に比較し、数％
から10％の低下にとどまつており、殆ど遜色はな
い。 Next, we will compare the yield rate of this infrared detection element and one using a conventional sapphire substrate.
If manufactured under the same conditions except for the difference in the substrate,
In the conventional method, the rate of good products is about 50% due to wire breakage due to partial peeling of the adhesive, whereas in the case of the present invention, there is almost no decrease in the rate of good products due to this, and other factors are dominant and the rate of good products decreases. is improved to about 90%. In addition, the results of comparing the output characteristics of the device showed that it was several percent lower than that of the conventional sapphire substrate device.
It has only decreased by 10% since then, which is almost comparable.
以上テルル化水銀カドミウムについて述べた
が、赤外線感応体の材料としては、テルル化鉛錫
のような他の三成分金属間カルコゲイド、硫化
鉛、アンチモン化インジウムのような他の単結晶
半導体を使用してもよい。又、PN接合を有する
ものでもよい。一般に、光導電効果や光起電力効
果のある材料もしくは構造に対し、本発明を適用
できることはいうまでもない。 Although mercury cadmium telluride has been described above, other ternary intermetallic chalcogides such as lead tin telluride, other single crystal semiconductors such as lead sulfide, and indium antimonide may also be used as materials for infrared sensors. It's okay. Alternatively, it may have a PN junction. In general, it goes without saying that the present invention can be applied to materials or structures that have a photoconductive effect or a photovoltaic effect.
以上説明したように本発明は、窒化アルミニウ
ム焼結体からなる基板を用いることにより、適度
の表面粗さの基板とすることができるので接着剤
との接着性が改善できるから、剥離不良を防止で
き、赤外線検出素子の信頼性と良品率を向上でき
るという効果がある。
As explained above, by using a substrate made of aluminum nitride sintered body, the present invention can provide a substrate with an appropriate surface roughness, which improves adhesion with adhesives and prevents peeling defects. This has the effect of improving the reliability and yield rate of infrared detection elements.
第１図は本発明の一実施例の断面図、第２図は
従来の赤外線検出素子の一例の断面図である。
１……基板、２……HgCdTe単結晶、３……接
着剤、４，５……電極、６……剥離・断線箇所。
FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of an example of a conventional infrared detection element. 1...Substrate, 2...H g C d T e single crystal, 3... Adhesive, 4, 5... Electrode, 6... Peeling/disconnection location.
Claims (1)
記基板の一主面に接着された所定形状の赤外線感
応体と、前記赤外線感応体に接触して設けられた
少なくとも一対の電極とを含んでなることを特徴
とする赤外線検出素子。1. Comprising a substrate made of a sintered aluminum nitride body, an infrared sensitive body of a predetermined shape adhered to one main surface of the substrate, and at least one pair of electrodes provided in contact with the infrared sensitive body. An infrared detection element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264344A JPS62123776A (en) | 1985-11-22 | 1985-11-22 | Infrared detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264344A JPS62123776A (en) | 1985-11-22 | 1985-11-22 | Infrared detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62123776A JPS62123776A (en) | 1987-06-05 |
| JPH0476514B2 true JPH0476514B2 (en) | 1992-12-03 |
Family
ID=17401856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60264344A Granted JPS62123776A (en) | 1985-11-22 | 1985-11-22 | Infrared detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123776A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5111050A (en) * | 1990-12-03 | 1992-05-05 | Santa Barbara Research Center | Quick cooldown/low distortion hybrid focal plane array platform for use in infrared detector dewar packages |
| US10886585B2 (en) * | 2018-09-20 | 2021-01-05 | International Business Machines Corporation | DC-capable cryogenic microwave filter with reduced Kapitza resistance |
-
1985
- 1985-11-22 JP JP60264344A patent/JPS62123776A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62123776A (en) | 1987-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |