JPH047658U - - Google Patents

Info

Publication number
JPH047658U
JPH047658U JP1990049586U JP4958690U JPH047658U JP H047658 U JPH047658 U JP H047658U JP 1990049586 U JP1990049586 U JP 1990049586U JP 4958690 U JP4958690 U JP 4958690U JP H047658 U JPH047658 U JP H047658U
Authority
JP
Japan
Prior art keywords
electrode
sample
processing apparatus
holding means
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990049586U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990049586U priority Critical patent/JPH047658U/ja
Publication of JPH047658U publication Critical patent/JPH047658U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】
第１図は本案装置の要部の構成を示す縦断面図
、第２図及び第３図は本案装置と従来装置とにお
けるパーテイクルの挙動を示す模式図である。 １……試料、２……処理室、３……静電チヤツ
ク、４……集塵器、４２……集塵部、４２ａ……
電極、４２ｂ……絶縁体、Ｐ……パーテイクル。

Claims (1)

  1. 【実用新案登録請求の範囲】 処理室内に配された保持手段に試料を保持させ
    、該試料にプラズマを照射して所定の処理を施す
    プラズマ処理装置において、 電極への電圧印加により、該電極の外側を被覆
    する絶縁体の表面に静電力を発生して集塵作用を
    なす集塵手段を、前記保持手段の周辺に具備する
    ことを特徴とするプラズマ処理装置。
JP1990049586U 1990-05-10 1990-05-10 Pending JPH047658U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990049586U JPH047658U (ja) 1990-05-10 1990-05-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990049586U JPH047658U (ja) 1990-05-10 1990-05-10

Publications (1)

Publication Number Publication Date
JPH047658U true JPH047658U (ja) 1992-01-23

Family

ID=31567405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990049586U Pending JPH047658U (ja) 1990-05-10 1990-05-10

Country Status (1)

Country Link
JP (1) JPH047658U (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016385A1 (en) * 1998-09-14 2000-03-23 Tokyo Electron Limited Plasma reactor
JP2015167157A (ja) * 2014-03-03 2015-09-24 東京エレクトロン株式会社 半導体製造装置、成膜処理方法及び記憶媒体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016385A1 (en) * 1998-09-14 2000-03-23 Tokyo Electron Limited Plasma reactor
JP2015167157A (ja) * 2014-03-03 2015-09-24 東京エレクトロン株式会社 半導体製造装置、成膜処理方法及び記憶媒体

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