JPH0480067U - - Google Patents
Info
- Publication number
- JPH0480067U JPH0480067U JP12499590U JP12499590U JPH0480067U JP H0480067 U JPH0480067 U JP H0480067U JP 12499590 U JP12499590 U JP 12499590U JP 12499590 U JP12499590 U JP 12499590U JP H0480067 U JPH0480067 U JP H0480067U
- Authority
- JP
- Japan
- Prior art keywords
- stage transistor
- diode
- output stage
- guard ring
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Description
第１図は本案の一実施例の略断面図、第２図ａ
はダーリントン回路の回路図、第２図ｂは従来の
一例の略断面図である。
１……ベース端子、２……コレクタ端子、３…
…エミツタ端子、４……入力段トランジスタ、５
……出力段トランジスタ、６……入力段抵抗、８
……第一のダイオード、９……第二のダイオード
、１０，１１……ベース層、１２，１３……コレ
クタ層、１４，１５……エミツタ層、１６……カ
ソード層、１７……アノード層、１９……ガード
リング層。
Figure 1 is a schematic sectional view of an embodiment of the present invention, Figure 2 a
2 is a circuit diagram of a Darlington circuit, and FIG. 2b is a schematic sectional view of a conventional example. 1...Base terminal, 2...Collector terminal, 3...
...Emitter terminal, 4...Input stage transistor, 5
...Output stage transistor, 6...Input stage resistor, 8
...First diode, 9... Second diode, 10, 11... Base layer, 12, 13... Collector layer, 14, 15... Emitter layer, 16... Cathode layer, 17... Anode layer , 19... Guard ring layer.
Claims (1)
された、入力段トランジスタ及び出力段トランジ
スタと、出力段トランジスタと並列に接続された
ダイオードと、出力段トランジスタとダイオード
との間に設けられたガードリング層とよりなり、
ガードリング層は半導体基板の表面側のダイオー
ドの一方の極と同じ導電型でありかつその周辺に
ライフタイムキラーを拡散した半導体装置。 An input stage transistor and an output stage transistor formed on the surface of a semiconductor substrate and connected in Darlington, a diode connected in parallel with the output stage transistor, and a guard ring layer provided between the output stage transistor and the diode. Become,
The guard ring layer has the same conductivity type as one pole of the diode on the front side of the semiconductor substrate, and is a semiconductor device in which a lifetime killer is diffused around it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499590U JPH0480067U (en) | 1990-11-26 | 1990-11-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499590U JPH0480067U (en) | 1990-11-26 | 1990-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0480067U true JPH0480067U (en) | 1992-07-13 |
Family
ID=31872620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12499590U Pending JPH0480067U (en) | 1990-11-26 | 1990-11-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0480067U (en) |
-
1990
- 1990-11-26 JP JP12499590U patent/JPH0480067U/ja active Pending
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