JPH0481856A - Photoresist coating composition - Google Patents
Photoresist coating compositionInfo
- Publication number
- JPH0481856A JPH0481856A JP19704990A JP19704990A JPH0481856A JP H0481856 A JPH0481856 A JP H0481856A JP 19704990 A JP19704990 A JP 19704990A JP 19704990 A JP19704990 A JP 19704990A JP H0481856 A JPH0481856 A JP H0481856A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist coating
- light
- coating composition
- absorbing
- absorbing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 21
- 239000008199 coating composition Substances 0.000 title claims abstract description 16
- 239000011358 absorbing material Substances 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 10
- 239000003504 photosensitizing agent Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 239000002904 solvent Substances 0.000 abstract description 7
- 239000000975 dye Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- -1 p-naphthol Chemical class 0.000 description 5
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 4
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- ZSBDGXGICLIJGD-UHFFFAOYSA-N 4-phenoxyphenol Chemical compound C1=CC(O)=CC=C1OC1=CC=CC=C1 ZSBDGXGICLIJGD-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- REFJWTPEDVJJIY-UHFFFAOYSA-N Quercetin Chemical compound C=1C(O)=CC(O)=C(C(C=2O)=O)C=1OC=2C1=CC=C(O)C(O)=C1 REFJWTPEDVJJIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- QPVRKFOKCKORDP-UHFFFAOYSA-N 1,3-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC(C)(O)CC=C1 QPVRKFOKCKORDP-UHFFFAOYSA-N 0.000 description 1
- ZTMADXFOCUXMJE-UHFFFAOYSA-N 2-methylbenzene-1,3-diol Chemical compound CC1=C(O)C=CC=C1O ZTMADXFOCUXMJE-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 1
- RMGJAHMVKWUCCJ-UHFFFAOYSA-N 5,6-dioxonaphthalene-1-sulfonic acid Chemical compound O=C1C(=O)C=CC2=C1C=CC=C2S(=O)(=O)O RMGJAHMVKWUCCJ-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical class CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 241000282472 Canis lupus familiaris Species 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- YXOLAZRVSSWPPT-UHFFFAOYSA-N Morin Chemical compound OC1=CC(O)=CC=C1C1=C(O)C(=O)C2=C(O)C=C(O)C=C2O1 YXOLAZRVSSWPPT-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ZVOLCUVKHLEPEV-UHFFFAOYSA-N Quercetagetin Natural products C1=C(O)C(O)=CC=C1C1=C(O)C(=O)C2=C(O)C(O)=C(O)C=C2O1 ZVOLCUVKHLEPEV-UHFFFAOYSA-N 0.000 description 1
- HWTZYBCRDDUBJY-UHFFFAOYSA-N Rhynchosin Natural products C1=C(O)C(O)=CC=C1C1=C(O)C(=O)C2=CC(O)=C(O)C=C2O1 HWTZYBCRDDUBJY-UHFFFAOYSA-N 0.000 description 1
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 1
- ALVGSDOIXRPZFH-UHFFFAOYSA-N [(1-diazonioimino-3,4-dioxonaphthalen-2-ylidene)hydrazinylidene]azanide Chemical compound C1=CC=C2C(=N[N+]#N)C(=NN=[N-])C(=O)C(=O)C2=C1 ALVGSDOIXRPZFH-UHFFFAOYSA-N 0.000 description 1
- IURGIPVDZKDLIX-UHFFFAOYSA-M [7-(diethylamino)phenoxazin-3-ylidene]-diethylazanium;chloride Chemical compound [Cl-].C1=CC(=[N+](CC)CC)C=C2OC3=CC(N(CC)CC)=CC=C3N=C21 IURGIPVDZKDLIX-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N anhydrous gallic acid Natural products OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 150000003935 benzaldehydes Chemical class 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001851 cinnamic acid derivatives Chemical class 0.000 description 1
- 235000019646 color tone Nutrition 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229960001867 guaiacol Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MWDZOUNAPSSOEL-UHFFFAOYSA-N kaempferol Natural products OC1=C(C(=O)c2cc(O)cc(O)c2O1)c3ccc(O)cc3 MWDZOUNAPSSOEL-UHFFFAOYSA-N 0.000 description 1
- 229940107698 malachite green Drugs 0.000 description 1
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- 150000002688 maleic acid derivatives Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- UXOUKMQIEVGVLY-UHFFFAOYSA-N morin Natural products OC1=CC(O)=CC(C2=C(C(=O)C3=C(O)C=C(O)C=C3O2)O)=C1 UXOUKMQIEVGVLY-UHFFFAOYSA-N 0.000 description 1
- 235000007708 morin Nutrition 0.000 description 1
- AJDUTMFFZHIJEM-UHFFFAOYSA-N n-(9,10-dioxoanthracen-1-yl)-4-[4-[[4-[4-[(9,10-dioxoanthracen-1-yl)carbamoyl]phenyl]phenyl]diazenyl]phenyl]benzamide Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2NC(=O)C(C=C1)=CC=C1C(C=C1)=CC=C1N=NC(C=C1)=CC=C1C(C=C1)=CC=C1C(=O)NC1=CC=CC2=C1C(=O)C1=CC=CC=C1C2=O AJDUTMFFZHIJEM-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000005875 quercetin Nutrition 0.000 description 1
- 229960001285 quercetin Drugs 0.000 description 1
- TVRGPOFMYCMNRB-UHFFFAOYSA-N quinizarine green ss Chemical compound C1=CC(C)=CC=C1NC(C=1C(=O)C2=CC=CC=C2C(=O)C=11)=CC=C1NC1=CC=C(C)C=C1 TVRGPOFMYCMNRB-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000001043 yellow dye Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は一般に輻射線に対応するフォトレジスト塗布組
成物に関するものであり、詳しくはＩＣ用フォトレジス
ト塗布組成物のパターン形成後の可視化性の改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention generally relates to a photoresist coating composition that is compatible with radiation, and more particularly to improving the visibility of a photoresist coating composition for IC after pattern formation. It is about improvement.
［従来の技術］
集積回路等に代表される微細加工技術は近年益々その加
工精度を向上させており、ダイナミックランダムアクセ
スメモリー（ＤＲＡＭ）を例にとれば、現在では、サブ
ミクロンの加工技術が大量生産レベルの技術として確立
されている。[Conventional technology] In recent years, microfabrication technology represented by integrated circuits has increasingly improved its machining accuracy. Taking dynamic random access memory (DRAM) as an example, submicron machining technology is now widely used. It has been established as a production level technology.
このサブミクロンの加工にはｇ線（４３６ｎｍ）、ｉ線
（３６５ｎｍ） 等の短波長の光を用いたフォトリソグ
ラフィー技術が利用されている。For this submicron processing, photolithography technology using short wavelength light such as g-line (436 nm) and i-line (365 nm) is used.
ＩＣ製造工程ではシリコン等の基板上に種々の加工を行
うが、基板表面にアルミニウム等の光を高反射するもの
をコーティングしたものがある。アルミニウム等をコー
ティングした基板上にパターニングを行う為にはハレー
ションを防止するため、感光性材料の他にフォトリソグ
ラフィーに使用する光源のｇ線（４３６ｎｍ）又はｉ線
（３６５ｎｍ）の光を吸収する吸光性材料を含有するフ
ォトレジスト塗布組成物を用いる方法が知られている。In the IC manufacturing process, various processes are performed on a substrate made of silicon or the like, and some substrate surfaces are coated with a material that highly reflects light, such as aluminum. In order to perform patterning on a substrate coated with aluminum, etc., in order to prevent halation, in addition to photosensitive materials, a light absorbing material that absorbs G-line (436 nm) or i-line (365 nm) light from the light source used in photolithography is used. Methods are known in which photoresist coating compositions containing photoresist materials are used.
（特公昭５１−３７５６２）しかし、これらの材料では
生成させたパターンとアルミニウム等の基板上の色調が
酷似しており、生成させたパターンを光学顕微鏡等にて
検査する際に識別が困難であった。(Japanese Patent Publication No. 51-37562) However, with these materials, the generated patterns and the color tones on substrates such as aluminum are very similar, making it difficult to distinguish when inspecting the generated patterns with an optical microscope. Ta.
［本発明が解決しようとする課題］
本発明の目的は、前記の背景に鑑み、生成させたパター
ンを光学顕微鏡等にて検査する際に識別が容易になるフ
ォトレジスト塗布組成物を提供することにある。[Problems to be Solved by the Present Invention] In view of the above-mentioned background, an object of the present invention is to provide a photoresist coating composition that allows easy identification when inspecting a generated pattern using an optical microscope or the like. It is in.
［課題を解決するための手段１
このような問題点を解決するために本発明者等は種々検
討を重ねた結果、特定の波長域に吸光性能を持つ吸光性
材料をフォトレジスト塗布組成物に含有させることによ
り目的を達成できるこを見比し本発明を完成した。[Means for Solving the Problems 1] In order to solve these problems, the inventors of the present invention have conducted various studies, and as a result, they have added a light-absorbing material that has light-absorbing properties in a specific wavelength range to a photoresist coating composition. The present invention was completed based on the fact that the object can be achieved by incorporating the above.
即ち、本発明の要旨は、５００〜７００ｎｍの範囲に吸
光性能を持つ吸光性材料を含有することを特徴とするフ
ォトレジスト塗布組成物に存する。That is, the gist of the present invention resides in a photoresist coating composition characterized by containing a light-absorbing material having light-absorbing performance in the range of 500 to 700 nm.
以下、本発明を更に詳細に説明する。The present invention will be explained in more detail below.
フォトレジスト塗布組成物は一般的にベース樹脂、感光
剤、及び溶媒からなり、各々の成分は例えば次の化合物
が用いられている。A photoresist coating composition generally consists of a base resin, a photosensitizer, and a solvent, and the following compounds are used as each component, for example.
ベース樹脂としては、アクリル酸誘導体、桂皮酸誘導体
、スチレン誘導体、マレイン酸誘導体等をモノマーとし
これらを重合させたポリマー類、又は、フェノール誘導
体とアルデヒド誘導体を重縮合させたノボラック樹脂類
等が一般的に使用される。Common base resins include polymers made by polymerizing acrylic acid derivatives, cinnamic acid derivatives, styrene derivatives, maleic acid derivatives, etc. as monomers, or novolac resins made by polycondensing phenol derivatives and aldehyde derivatives. used for.
更に具体的には、ポリヒドロキシスチレン又はその誘導
体、スチレン−無水マレイン酸共重合体、ポリビニルヒ
ドロキシベンゾエート、カルボキシル基含有アクリル系
樹脂、ポリＮ−（ヒドロキシフェニル）マレイミド又は
その誘導体、ノボラック樹脂等のアルカリ可溶性樹脂が
挙げられる。例えば、ノボラック樹脂としては、フェノ
ール類、０−クレゾール、ｍ−クレゾール、ｐ−クレソ
ーノペ３−エチルフェール、２，５−キシレノール、３
，５−キシレノール等のアルキルフェノール類、２−メ
トキシフェノール、４−メトキシフェノール、４−フェ
ノキシフェノール等のアルコキシ又はアリルオキシフェ
ノール類、１，３−ジヒドロキシベンゼン、１，３−ジ
ヒドロキシ−２−メチルベンゼン、１，２．３− ）ジ
ヒドロキシベンゼン、１，３．５− ）ジヒドロキシベ
ンゼン、１．２．３−トリヒドロキシ−５−メチルベン
ゼン等のポリヒドロキシベンゼン類、α−ナフトール、
ｐ−ナフトール、３−メチル、α−ナフトール等のナフ
トール類のモノマー成分をフォルムアルデヒド、パラフ
ォルムアルデヒド、アセトアルデヒド類、ベンズアルデ
ヒド類、アセトン等のアルキルケトン類のカルボニル化
合物とを例えば塩酸、硫酸、しゆう酸等を触媒とし、混
合加熱し重縮合させ製造することができる。More specifically, alkalis such as polyhydroxystyrene or its derivatives, styrene-maleic anhydride copolymer, polyvinylhydroxybenzoate, carboxyl group-containing acrylic resin, polyN-(hydroxyphenyl)maleimide or its derivatives, novolak resin, etc. Examples include soluble resins. For example, novolac resins include phenols, 0-cresol, m-cresol, p-cresonope 3-ethylfer, 2,5-xylenol, 3
, alkylphenols such as 5-xylenol, alkoxy or allyloxyphenols such as 2-methoxyphenol, 4-methoxyphenol, and 4-phenoxyphenol, 1,3-dihydroxybenzene, 1,3-dihydroxy-2-methylbenzene, 1,2.3-) dihydroxybenzene, 1,3.5-) dihydroxybenzene, polyhydroxybenzenes such as 1.2.3-trihydroxy-5-methylbenzene, α-naphthol,
Monomer components of naphthols such as p-naphthol, 3-methyl and α-naphthol are combined with carbonyl compounds of alkyl ketones such as formaldehyde, paraformaldehyde, acetaldehydes, benzaldehydes and acetone using hydrochloric acid, sulfuric acid, etc. It can be produced by mixing, heating, and polycondensing using an acid or the like as a catalyst.
感光剤としては、ジアゾニウム塩類、アジド化合物類、
キノンジアジド化合物類が一般的に使用される。As photosensitizers, diazonium salts, azide compounds,
Quinonediazide compounds are commonly used.
例えばキノンジアシド系感光剤としては、１，２−ベン
ゾキノンジアジド−４−スルフォン酸、１，２−ナフト
キノンジアジド−５−スルフォン酸、１，２−ナフトキ
ノンジアジド−４−スルフォン酸等のエステルもしくは
アミドのキノンジアジド系感光剤が好適であり、具体的
にはグリセリン、ペンタエリスリトール等のポリヒドロ
キシアルキル化合物、及び／又は、ビスフェノールＡ、
没食子酸エステル、ケルセチン、モリン、ポリヒドロキ
シヘンシフエノン等のポリヒドロキシ芳香族化合物の１
，２−ベンゾキノンジアジド−４−スルフォン酸、１，
２−ナフトキノンジアジド−５−スルフォン酸エステル
又は１，２−ナフトキノンジアジド−４−スルフォン酸
エステルが用いられ、さらに好適には、２．３．４−ト
リヒドロキシベンゾフェノン、２．３．４．４’−テト
ラヒドロキシベンゾフェノン、２，２”、 ４．４’−
テトラヒドロキシベンゾフェノン、２．２’、 ３．４
．４’−ペンタヒドロキシベンゾフェノン、２．３．３
’、 ４．４’、 ５’−へキサヒドロキシベンゾフェ
ノン等のポリヒドロキシベンゾフェノンの１，２−ベン
ゾキノンジアジド−４−スルフォン酸エステル、１，２
−ナフトキノンジアジド−５−スルフォン酸エステル、
又は、１，２−ナフトキノンジアジド−４−スルフォン
酸エステルが用いられる。For example, quinonediazide-based photosensitizers include esters or amides of quinonediazide such as 1,2-benzoquinonediazide-4-sulfonic acid, 1,2-naphthoquinonediazide-5-sulfonic acid, and 1,2-naphthoquinonediazide-4-sulfonic acid. Preferred are photosensitive agents, specifically polyhydroxyalkyl compounds such as glycerin and pentaerythritol, and/or bisphenol A,
One of polyhydroxy aromatic compounds such as gallic acid ester, quercetin, morin, polyhydroxyhensiphenone, etc.
,2-benzoquinonediazide-4-sulfonic acid, 1,
2-naphthoquinonediazide-5-sulfonic acid ester or 1,2-naphthoquinonediazide-4-sulfonic acid ester is used, more preferably 2.3.4-trihydroxybenzophenone, 2.3.4.4' -Tetrahydroxybenzophenone, 2,2", 4.4'-
Tetrahydroxybenzophenone, 2.2', 3.4
．． 4'-pentahydroxybenzophenone, 2.3.3
', 4.4', 1,2-benzoquinonediazide-4-sulfonic acid ester of polyhydroxybenzophenone such as 5'-hexahydroxybenzophenone, 1,2
-naphthoquinonediazide-5-sulfonic acid ester,
Alternatively, 1,2-naphthoquinonediazide-4-sulfonic acid ester is used.
通常フォトレジスト塗布組成物は上記成分を各々一種類
以上用い、エチルセロソルブアセテート、乳酸エチル等
の溶媒に混合溶解させ製造することができる。例えば、
上記のノボラック樹脂とキノンジアジド系感光剤の場合
、通常樹脂に対し感光剤を５〜１００重量％、好ましく
は１０〜８０重量％程度用いる。また、溶媒の使用量は
特に制限はないが、通常、樹脂と感光剤との合計量が３
〜５０重量％の濃度範囲になるように使用するのが好ま
しい。又、必要に応じ、塗布性改良のための界面活性剤
、ハレーションを防止するための黄色系の染料、感度向
上のための増感剤等を添加することもできる。Generally, a photoresist coating composition can be produced by using one or more of each of the above components and mixing and dissolving them in a solvent such as ethyl cellosolve acetate or ethyl lactate. for example,
In the case of the above-mentioned novolak resin and quinone diazide photosensitizer, the amount of the photosensitizer is usually about 5 to 100% by weight, preferably about 10 to 80% by weight, based on the resin. There is no particular restriction on the amount of solvent used, but usually the total amount of resin and photosensitizer is 3.
It is preferable to use it in a concentration range of 50% by weight. Further, if necessary, a surfactant for improving coating properties, a yellow dye for preventing halation, a sensitizer for improving sensitivity, etc. can be added.
これらのフォトレジスト塗布組成物は生成する画像と露
出部分との関係によりネガ型、ポジ型の二種のフォトレ
ジスト塗布組成物に分類することができる。These photoresist coating compositions can be classified into two types, negative-type and positive-type, depending on the relationship between the generated image and the exposed area.
本発明では、上記フォトレジスト塗布組成物に５００〜
７００ｎｍの範囲に吸光性能を持つ吸光性材料を含有さ
せることを必須要件とするものである。In the present invention, the photoresist coating composition has a
It is an essential requirement to contain a light-absorbing material having light-absorbing performance in a range of 700 nm.
かかる吸光性材料としては、好ましくは、５００〜７０
０ｎｍの波長域の任意の波長にて１００以上、更に好ま
しくは、１０００以上のモル吸光係数を有する吸光性材
料が有利に使用され、一般に、市販の青色系の色素を使
用することができる。尚、かかる色素は、フォトレジス
ト組成物に使用する溶媒或は樹脂に対し溶解性を有する
ものが用いられる。これらの代表例としては具体的に下
記の吸光性材料を例示することができる。Such a light-absorbing material preferably has a molecular weight of 500 to 70
A light-absorbing material having a molar extinction coefficient of 100 or more, more preferably 1000 or more at any wavelength in the wavelength range of 0 nm is advantageously used, and in general, commercially available blue dyes can be used. It should be noted that such a dye is soluble in the solvent or resin used in the photoresist composition. As representative examples of these materials, the following light-absorbing materials can be specifically exemplified.
メチレンブルー、ベーシックブルー３、マラカイトグリ
ーン、アメトラザルブルー３ＲＬ、ソルベントブルー３
５、ソルベントグリーン３、ダイアレジンブルーＧ（三
菱化成（株、商品名）、ダイアレジンブルーＪ（三菱化
成（株、商品名）、ダイアニックスプルー〇Ｒ（三菱化
成（株、商品名）、デイスパーゾルブルーＤ−４０（Ｉ
ＣＩ社製、商品名）、スミカロンブルー５−ＢＦ（住人
化学■製７、商品名）
尚、ハレーションを防止するためには、かかる吸光性材
料を黄色系吸光性材料と併用するのが一般的であるが、
緑色系の吸光性材料即ち、５００〜７００ｎｍ及び３０
０〜５００ｎｍに吸光性能を持つ吸光材料を用いる場合
には、単一の吸光性材料にて、ハレーション防止効果と
基板との識別効果の双方を満足させることができる。Methylene Blue, Basic Blue 3, Malachite Green, Ametolazal Blue 3RL, Solvent Blue 3
5. Solvent Green 3, Dia Resin Blue G (Mitsubishi Kasei Co., Ltd., trade name), Dia Resin Blue J (Mitsubishi Kasei Co., Ltd., trade name), Dianic Sprue R (Mitsubishi Kasei Co., Ltd., trade name), Day Sparsol Blue D-40 (I
Sumikalon Blue 5-BF (manufactured by CI Co., Ltd., product name), Sumikalon Blue 5-BF (manufactured by Juju Chemical Co., Ltd. 7, product name) In order to prevent halation, it is common to use such a light-absorbing material in combination with a yellow light-absorbing material. However,
Greenish light-absorbing material, i.e. 500-700 nm and 30 nm
In the case of using a light-absorbing material having light-absorbing performance in the wavelength range of 0 to 500 nm, a single light-absorbing material can satisfy both the anti-halation effect and the discrimination effect from the substrate.
本発明に於ける５００〜７００ｎｍの範囲に吸光性能を
持つ吸光性材料は単独で又は２種以上混合しても良い。In the present invention, the light-absorbing materials having light-absorbing performance in the range of 500 to 700 nm may be used alone or in combination of two or more.
本発明の吸光性材料の添加量は一般的にはフオしくは０
．１〜５重量％、更に好ましくは０．５〜３重量％用い
るのが良い。The amount of the light-absorbing material of the present invention added is generally 0 or 0.
．． It is preferable to use 1 to 5% by weight, more preferably 0.5 to 3% by weight.
添加量が多くなりすぎる解像性等への影響が大きくなり
好ましくなく、又、逆に少なすぎると識別効果が不足し
好ましくない。If the amount added is too large, the effect on resolution etc. will be large, which is undesirable. On the other hand, if the amount added is too small, the discrimination effect will be insufficient, which is undesirable.
次に具体例を挙げて本発明を更にくわしく説明するが、
本発明はその要旨を越えないかぎりは実施例によりなん
ら制限を受けることはない。Next, the present invention will be explained in more detail by giving specific examples.
The present invention is not limited in any way by the embodiments unless the gist of the invention is exceeded.
［実施例］
（フォトレジスト液の調製例）
クレゾール系ノボラック樹脂３．０ｇ、及び２．３．４
゜４′、テトラヒドロキシベンゾフェノンと１，２−ナ
フトキノンジアジド、５−スルフオン酸クロリドより合
成した感光剤１．０ｇ、及び、４−ヒドロキシ、３−メ
チルフェニルアゾフェニレンアゾベンゼン（ハレーショ
ン防止染料） ０．１２ｇをエチルセロソルブアセテー
ト１０ｇに溶解した。このものを孔径０．２ｐｍのメン
ブレンフィルターにてろ過しフォトレジスト液を調製し
た。[Example] (Preparation example of photoresist solution) 3.0 g of cresol novolac resin, and 2.3.4
゜4', 1.0 g of a photosensitizer synthesized from tetrahydroxybenzophenone, 1,2-naphthoquinone diazide, and 5-sulfonic acid chloride, and 0.12 g of 4-hydroxy, 3-methylphenylazophenylene azobenzene (antihalation dye) was dissolved in 10 g of ethyl cellosolve acetate. This was filtered through a membrane filter with a pore size of 0.2 pm to prepare a photoresist solution.
（実施例１〜４及び比較例１）
上記フォトレジスト液に表−１に記載した吸光性材料を
添加し、これを既にパターニング、エツチングを行い、
凹凸のパターンを有するアルミニウム蒸着基板に常法に
従い塗布、パターニングを行った。(Examples 1 to 4 and Comparative Example 1) The light-absorbing material listed in Table 1 was added to the photoresist solution, and this was already patterned and etched.
Coating and patterning were performed in accordance with a conventional method on an aluminum vapor-deposited substrate having an uneven pattern.
この新規のパターンを光学顕微鏡にてパターニング前に
既に存在しているアルミニウム表面のパターンとの識別
の容易さを観察した。This new pattern was observed using an optical microscope to see how easy it was to distinguish it from the already existing pattern on the aluminum surface before patterning.
表−１
［発明の効果］
本発明のフォトレジスト塗布組成物によれば、アルミニ
ウム表面等、従来のフォトレジスト塗布組成物では識別
困難なパターンしか得られながった基板上にも容易に識
別できるパターンを形成することかでき、
産業士別するところが犬である。Table 1 [Effects of the Invention] According to the photoresist coating composition of the present invention, it is possible to easily identify substrates such as aluminum surfaces on which conventional photoresist coating compositions can only provide patterns that are difficult to identify. Dogs are able to form patterns that are unique to industrialists.
Claims (1)
性材料を含有することを特徴とするフォトレジスト塗布
組成物。(1) A photoresist coating composition characterized by containing a light-absorbing material having light-absorbing performance in the range of 500 to 700 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19704990A JPH0481856A (en) | 1990-07-25 | 1990-07-25 | Photoresist coating composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19704990A JPH0481856A (en) | 1990-07-25 | 1990-07-25 | Photoresist coating composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0481856A true JPH0481856A (en) | 1992-03-16 |
Family
ID=16367865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19704990A Pending JPH0481856A (en) | 1990-07-25 | 1990-07-25 | Photoresist coating composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0481856A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002278056A (en) * | 2001-03-16 | 2002-09-27 | Sumitomo Chem Co Ltd | Colored photosensitive resin composition |
| JP2007272002A (en) * | 2006-03-31 | 2007-10-18 | Nippon Zeon Co Ltd | Resist pattern forming method and photosensitive resin composition |
-
1990
- 1990-07-25 JP JP19704990A patent/JPH0481856A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002278056A (en) * | 2001-03-16 | 2002-09-27 | Sumitomo Chem Co Ltd | Colored photosensitive resin composition |
| JP2007272002A (en) * | 2006-03-31 | 2007-10-18 | Nippon Zeon Co Ltd | Resist pattern forming method and photosensitive resin composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4863827A (en) | Postive working multi-level photoresist | |
| KR0184870B1 (en) | Radiation-sensitive resin composition | |
| JP2552891B2 (en) | Positive photoresist composition | |
| US4983492A (en) | Positive dye photoresist compositions with 2,4-bis(phenylazo)resorcinol | |
| KR100225207B1 (en) | Positive type resist composition for i line and pattern formation method | |
| US5601961A (en) | High-sensitivity positive-working photoresist composition | |
| US5366843A (en) | Coated substrate utilizing composition including selected phenolic derivatives of 4-(4-hydroxyphenyl)-cyclohexanone as sensitivity enhancers | |
| US5324620A (en) | Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde | |
| KR0142846B1 (en) | Stained i-ray positive functional radiation sensitive mixture | |
| JP2640137B2 (en) | Positive photoresist composition | |
| US5328806A (en) | Positive image formation utilizing radiation sensitive mixture containing dimeric or trimeric sesamol/aldehyde condensation products as sensitivity enhancers | |
| US4985333A (en) | Positive-working photosensitive composition with three difference 1,2-naphthoquinone diazide sulfonic acid esters to include the ester of curcumin | |
| JPH012034A (en) | photoresist composition | |
| JPS61219951A (en) | Positive type radiation sensitive composition | |
| JP3429039B2 (en) | Positive photoresist composition | |
| JPH0561193A (en) | Positive type photoresist composition | |
| JPH06242599A (en) | Radiation sensitive resin composition | |
| JPH0413143A (en) | Resist composition | |
| JPH03130774A (en) | Coating composition for positive type photoresist | |
| JPS63159843A (en) | Positive type photoresist | |
| JPH0413146A (en) | Resist composition | |
| JPH03279957A (en) | Positive type photoresist composition | |
| JPH04214563A (en) | photoresist composition | |
| JPH0519466A (en) | Positive type photoresist composition | |
| JPS63304247A (en) | Photosensitive composition and photosensitive lithographic printing plate |