JPH048299U - - Google Patents

Info

Publication number
JPH048299U
JPH048299U JP4715290U JP4715290U JPH048299U JP H048299 U JPH048299 U JP H048299U JP 4715290 U JP4715290 U JP 4715290U JP 4715290 U JP4715290 U JP 4715290U JP H048299 U JPH048299 U JP H048299U
Authority
JP
Japan
Prior art keywords
bipolar transistor
insulated gate
turns
power source
gate bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4715290U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4715290U priority Critical patent/JPH048299U/ja
Publication of JPH048299U publication Critical patent/JPH048299U/ja
Pending legal-status Critical Current

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  • Stroboscope Apparatuses (AREA)
  • Discharge-Lamp Control Circuits And Pulse- Feed Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す回路図、第2
図は第1図の回路の各部の電位の経時変化を示す
タイムチヤート、第3図は他の実施例を示す回路
図である。第4図および第5図は従来の2例を示
す回路図である。 1……電源スイツチ、2……電源、3……昇圧
回路、4……メインコンデンサ、5……インダク
タ、6,15,21……ダイオード、8……トリ
ガコンデンサ、9……トリガトランス、10……
サイリスタ、14……調光制御回路、16,51
……トランジスタ、19……ゲートコンデンサ、
22……ツエナーダイオード、24……絶縁ゲー
ト型バイポーラトランジスタ(IGBT)、25
……発光管、7〜13……トリガ回路TGC、1
5,19,20,22,23……オン回路ONC
、16,17,18,21……オフ回路OFC。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a time chart showing changes over time in the potential of each part of the circuit of FIG. 1, and FIG. 3 is a circuit diagram showing another embodiment. FIGS. 4 and 5 are circuit diagrams showing two conventional examples. 1... Power switch, 2... Power supply, 3... Boost circuit, 4... Main capacitor, 5... Inductor, 6, 15, 21... Diode, 8... Trigger capacitor, 9... Trigger transformer, 10 ……
Thyristor, 14...Dimmer control circuit, 16, 51
...Transistor, 19...Gate capacitor,
22... Zener diode, 24... Insulated gate bipolar transistor (IGBT), 25
... Arc tube, 7-13 ... Trigger circuit TGC, 1
5, 19, 20, 22, 23...On circuit ONC
, 16, 17, 18, 21...off circuit OFC.

Claims (1)

【実用新案登録請求の範囲】 主電源と、 発光エネルギーを畜えるコンデンサと、 このコンデンサに並列に接続された発光管と、 この発光管をオン、オフにする絶縁ゲート型バ
イポーラトランジスタと、 前記発光管のトリガ電極に高圧を印加するトリ
ガ回路と、 前記絶縁ゲート型バイポーラトランジスタ用電
源から抵抗器を介してゲート電圧をゲートに印加
して前記絶縁ゲート型バイポーラトランジスタを
オンするとともに、前記絶縁ゲート型バイポーラ
トランジスタ用電源とゲートとの接続線を基準電
位線に短絡することにより前記絶縁ゲート型バイ
ポーラトランジスタをオフする制御回路とを備え
る電子閃光装置の発光制御回路において、 前記抵抗器と並列に前記ゲートからの電流のみ
を許容する一方向性素子を設けるとともに、前記
一方向性素子、前記抵抗器および前記絶縁ゲート
型バイポーラトランジスタ用電源の接続点と前記
基準電位線との間に、閉時に前記絶縁ゲート型バ
イポーラトランジスタをオフし、開時に前記絶縁
ゲート型バイポーラトランジスタがオンすること
を可能ならしめるスイツチング素子を設けたこと
を特徴とする電子閃光装置の発光制御回路。
[Claims for Utility Model Registration] A main power source, a capacitor that stores the energy of the emitted light, an arc tube connected in parallel to the capacitor, an insulated gate bipolar transistor that turns on and off the arc tube, and the light emitting device. a trigger circuit that applies a high voltage to a trigger electrode of the tube; and a gate voltage is applied to the gate from the power source for the insulated gate bipolar transistor through a resistor to turn on the insulated gate bipolar transistor; A light emission control circuit for an electronic flash device, comprising: a control circuit that turns off the insulated gate bipolar transistor by short-circuiting a connection line between a power source for the bipolar transistor and the gate to a reference potential line; A unidirectional element that only allows current from the insulated gate bipolar transistor is provided between the reference potential line and the connection point of the unidirectional element, the resistor, and the power source for the insulated gate bipolar transistor. 1. A light emission control circuit for an electronic flash device, comprising a switching element that turns off a gate type bipolar transistor and turns on the insulated gate type bipolar transistor when opened.
JP4715290U 1990-05-02 1990-05-02 Pending JPH048299U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4715290U JPH048299U (en) 1990-05-02 1990-05-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4715290U JPH048299U (en) 1990-05-02 1990-05-02

Publications (1)

Publication Number Publication Date
JPH048299U true JPH048299U (en) 1992-01-24

Family

ID=31562840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4715290U Pending JPH048299U (en) 1990-05-02 1990-05-02

Country Status (1)

Country Link
JP (1) JPH048299U (en)

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