JPH0484471A - Manufacturing method of integrated magnetic sensor - Google Patents
Manufacturing method of integrated magnetic sensorInfo
- Publication number
- JPH0484471A JPH0484471A JP2197649A JP19764990A JPH0484471A JP H0484471 A JPH0484471 A JP H0484471A JP 2197649 A JP2197649 A JP 2197649A JP 19764990 A JP19764990 A JP 19764990A JP H0484471 A JPH0484471 A JP H0484471A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- thin film
- electrode
- film
- ferromagnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 35
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 20
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 239000000956 alloy Substances 0.000 abstract description 5
- 229910052759 nickel Inorganic materials 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000005459 micromachining Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は物体の回転量の検出や位置を検出するための検
出装置等に組み込まれて磁界を検出する集積化磁気セン
サの製造方法に係わり、特に集積回路（ＩＣ）と一体止
された集積化磁気センサの製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing an integrated magnetic sensor that is incorporated into a detection device for detecting the amount of rotation or position of an object to detect a magnetic field. In particular, the present invention relates to a method of manufacturing an integrated magnetic sensor integrated with an integrated circuit (IC).
従来、磁界を検出するための磁気センサとしては、たと
えば特公昭５１−４１３３５号公報に開示されている磁
電変換素子、すなわち磁気抵抗素子がある。この磁気抵
抗素子は、連続的に折り返し構造を持つ強磁性体を接合
部で直列に接続して形成されている。この磁気抵抗素子
は磁気記録媒体から有限の距離を隔てて配置される。そ
して、この磁気抵抗素子を飽和させるのに十分な、しか
もこの素子面内で回転するような磁気信号が磁気記録媒
体から発生すると、その磁気信号により磁気抵抗素子の
接続部から信号が出力される。Conventionally, as a magnetic sensor for detecting a magnetic field, there is a magnetoelectric conversion element, that is, a magnetoresistive element, which is disclosed in Japanese Patent Publication No. 51-41335, for example. This magnetoresistive element is formed by connecting ferromagnetic materials having a continuous folded structure in series at joints. This magnetoresistive element is placed at a finite distance from the magnetic recording medium. When a magnetic recording medium generates a magnetic signal sufficient to saturate the magnetoresistive element and rotate within the plane of the element, the magnetic signal causes a signal to be output from the connection of the magnetoresistive element. .
また、一方、このような磁気センサの製造方法としては
、たとえば特開昭５８−１３５６８８号公報に開示され
ている。この方法では、材料組成が９１〜３８重量％の
ニッケル（Ｎｉ）および９〜６２重量％のコバル）（Ｃ
ｏ）からなる合金薄膜について、蒸着基板の温度、膜厚
、熱処理温度など、成膜プロセス内における製造条件が
開示されている。On the other hand, a method for manufacturing such a magnetic sensor is disclosed in, for example, Japanese Patent Laid-Open No. 135688/1983. In this method, the material composition is 91-38% by weight of nickel (Ni) and 9-62% by weight of cobal (C).
The manufacturing conditions in the film forming process, such as the temperature of the deposition substrate, the film thickness, and the heat treatment temperature, are disclosed for the alloy thin film consisting of (o).
上述のように従来においては、磁気センサおよびその製
造方法については開示されているが、この磁気センサを
集積回路と一体化する方法については開示されていない
。そのためには、集積回路基板の電極上に強磁性体薄膜
をそのまま形成すればよい。As mentioned above, although magnetic sensors and methods for manufacturing the same have been disclosed in the prior art, methods for integrating the magnetic sensors with integrated circuits have not been disclosed. For this purpose, a ferromagnetic thin film may be directly formed on the electrodes of the integrated circuit board.
しかしながら、強磁性体薄膜は極めて薄い膜であるため
、集積回路基板の電極上に強磁性体薄膜をそのまま形成
しようすると、電極およびコンタクトホールの角部にお
いて強磁性体薄膜の段切れ現象が生じ、いわゆるステッ
プカバレージが悪くなり、安定した磁気検出を行うこと
ができないという問題があった。However, since the ferromagnetic thin film is an extremely thin film, if a ferromagnetic thin film is directly formed on the electrodes of an integrated circuit board, a breakage phenomenon will occur in the ferromagnetic thin film at the corners of the electrodes and contact holes. There was a problem in that so-called step coverage deteriorated and stable magnetic detection could not be performed.
本発明はかかる問題点に鑑みてなされたもので、その目
的は、強磁性体薄膜の段切れ現象を防止し、安定した磁
気検出を行うことのできる集積化磁気センサの製造方法
を提供することにある。The present invention has been made in view of such problems, and its purpose is to provide a method for manufacturing an integrated magnetic sensor that can prevent the phenomenon of breakage of ferromagnetic thin films and perform stable magnetic detection. It is in.
本発明による集積化磁気センサの製造方法は、集積回路
が形成された半導体基板上に電極を形成する工程と、前
記電極を含む半導体基板上に絶縁性膜を形成する工程と
、前記絶縁性膜に前記電極の接続面に達する電気的接続
部を形成するとともに、この電気的接続部の内壁に段部
構造を形成する工程と、前記電気的接続部を含む絶縁性
膜の表面に磁気抵抗素子となる強磁性体薄膜を形成する
工程と、前記強磁性体薄膜上に導電性膜を形成する工程
とを具備している。A method for manufacturing an integrated magnetic sensor according to the present invention includes a step of forming an electrode on a semiconductor substrate on which an integrated circuit is formed, a step of forming an insulating film on the semiconductor substrate including the electrode, and a step of forming an insulating film on the semiconductor substrate including the electrode. forming an electrical connection portion reaching the connection surface of the electrode, and forming a stepped structure on the inner wall of the electrical connection portion; and forming a magnetoresistive element on the surface of the insulating film including the electrical connection portion. The method includes a step of forming a ferromagnetic thin film, and a step of forming a conductive film on the ferromagnetic thin film.
このような方法により本発明では、電気的接続部の内壁
に段差構造が形成されるため、強磁性体薄膜が滑らかに
形成される。したがって強磁性体薄膜の段切れ現象を防
止でき、ステップカバレージが向上する。In the present invention, by such a method, a step structure is formed on the inner wall of the electrical connection portion, so that the ferromagnetic thin film is formed smoothly. Therefore, step breakage of the ferromagnetic thin film can be prevented, and step coverage can be improved.
また、本発明による集積化磁気センサの製造方法は、前
記絶縁性膜を形成する前に、電極の外壁に傾斜面を形成
する工程をさらに含むもので、電気的接続部の段差構造
と相俟って強磁性体薄膜の段切れ現象をさらに防止イる
ことができる。Furthermore, the method for manufacturing an integrated magnetic sensor according to the present invention further includes the step of forming an inclined surface on the outer wall of the electrode before forming the insulating film. Therefore, the phenomenon of breakage of the ferromagnetic thin film can be further prevented.
以下、図面を参照して本発明の詳細な説明する。 Hereinafter, the present invention will be described in detail with reference to the drawings.
第２図は本発明の一実施例に係わる集積化磁気センサの
等価回路を表わすものである。１１は強磁性体薄膜によ
り形成された磁気抵抗１２〜１５からなる磁気抵抗素子
部を示している。また、１６は帰還抵抗、１７、セット
抵抗１８、コンパレータ１９、電源端子２０、出力端子
２１およびグランド端子２２からなる波形処理部であり
、この波形処理部１６は集積回路により形成されている
。FIG. 2 shows an equivalent circuit of an integrated magnetic sensor according to an embodiment of the present invention. Reference numeral 11 denotes a magnetoresistive element section consisting of magnetoresistive elements 12 to 15 formed of a ferromagnetic thin film. Further, 16 is a waveform processing section consisting of a feedback resistor 17, a set resistor 18, a comparator 19, a power supply terminal 20, an output terminal 21, and a ground terminal 22, and this waveform processing section 16 is formed of an integrated circuit.
この集積化磁気センサにおいては、磁気抵抗素子部１１
の抵抗１２と抵抗１３との接続部の検出電位がコンパレ
ータ１９の正側入力端、また抵抗１４と抵抗１５との接
続部の検出電位がコンパレータ１９の負側入力端にそれ
ぞれ入力される。In this integrated magnetic sensor, the magnetoresistive element section 11
The detected potential at the connection between the resistors 12 and 13 is input to the positive input terminal of the comparator 19, and the detected potential at the connection between the resistors 14 and 15 is input to the negative input terminal of the comparator 19.
コンパレータ１９は両入力端に入力した電位を比較し、
出力端子２１から検出磁気に応じたパルスを出力する。Comparator 19 compares the potentials input to both input terminals,
A pulse corresponding to the detected magnetism is output from the output terminal 21.
第１図（ａ）〜（ｄ）はそれぞれ上記集積化磁気センサ
の製造工程を表わすものである。すなわち、まず、同図
（ａ）に示すように半導体基板たとえばシリコン基板１
内にＮ型層２からなるトランジスタを形成した後、この
シリコン基板１の上面に真空蒸着法により膜厚的１μｍ
の金属たとえばアルミニウムを蒸着し、このアルミニウ
ム膜を通常の微細加工技術によりパターニングして電極
３を形成する。なお、このときエツチング液としては等
方性エツチング液を使用する。これにより電極３の側壁
には湾曲面が形成される。続いて、この電極３の湾曲面
を緩和するたｈｓｏｃ、＜スピン・オン・グラス）膜４
を形成し、外壁面を直線状の傾斜面４ａとする。この傾
斜面４ａの角度としては３０°〜４０°が好ましい。続
いて、同図（ｂ）に示すようにプラズマＣ，ＶＤ法（化
学的気相成長法）により膜厚的１μｍの絶縁性の窒化膜
（ＳｉｓＮ４膜）５を電極３を含むシリコン基板１の全
面に形成する。次に、通常の微細加工技術により窒化膜
５に電極３の上面（接続面）に達するコンタクトホール
（電気的接続部）６を形成する。続いて、同様にして同
図（Ｃ）に示すようにコンタクトホール６の周囲をその
半分の深さまでエツチングしてコンタクトホール６に段
部７を形成する。FIGS. 1(a) to 1(d) each show the manufacturing process of the above-mentioned integrated magnetic sensor. That is, first, as shown in FIG.
After forming a transistor consisting of an N-type layer 2 within the silicon substrate 1, a film with a thickness of 1 μm is deposited on the upper surface of the silicon substrate 1 by vacuum evaporation.
A metal such as aluminum is vapor-deposited, and this aluminum film is patterned using a normal microfabrication technique to form the electrode 3. Note that at this time, an isotropic etching solution is used as the etching solution. As a result, a curved surface is formed on the side wall of the electrode 3. Subsequently, a hsoc (<spin-on-glass) film 4 is applied to soften the curved surface of the electrode 3.
, and the outer wall surface is a linear inclined surface 4a. The angle of this inclined surface 4a is preferably 30° to 40°. Subsequently, as shown in the same figure (b), an insulating nitride film (SisN4 film) 5 with a film thickness of 1 μm is deposited on the silicon substrate 1 including the electrode 3 by plasma C, VD method (chemical vapor deposition method). Form on the entire surface. Next, a contact hole (electrical connection portion) 6 reaching the upper surface (connection surface) of the electrode 3 is formed in the nitride film 5 using a normal microfabrication technique. Subsequently, the periphery of the contact hole 6 is similarly etched to half the depth to form a stepped portion 7 in the contact hole 6, as shown in FIG. 6(C).
次に、同図（ｄ）に示すようにＥＢ（エレクトロンビー
ム）装置を用いて真空（ＩＸＩＯ−７Ｔｏｒｒ ）中に
おいて蒸着を行い、ニッケル系合金（Ｎｉ−Ｃｏ、Ｎｉ
−Ｆｅ等）による強磁性体薄膜８を形成する。このとき
のシリコン基板１の温度は約３００℃、蒸着速度は、０
人／ ｓ ｅ ｃとする。続いて、この強磁性体薄膜８
の上に同じくＥＢ装置によりアルミニウム（ＡＩ）また
は金（Ａｕ）からなる膜厚的、１５μｍの低抵抗金属薄
膜９を形成する。最後に、真空中においてスパッタリン
グを行い、たとえば二酸化シリコンからなる保護膜１０
を形成する。この保護膜１０の膜厚は低抵抗金属薄膜９
以上の膜厚、すなわち１゜１５μｍ以上の厚さとする。Next, as shown in the same figure (d), evaporation was performed in vacuum (IXIO-7 Torr) using an EB (electron beam) device, and nickel-based alloys (Ni-Co, Ni) were deposited in a vacuum (IXIO-7 Torr).
-Fe, etc.) ferromagnetic thin film 8 is formed. At this time, the temperature of the silicon substrate 1 was approximately 300°C, and the deposition rate was 0.
Person / sec. Next, this ferromagnetic thin film 8
A low-resistance metal thin film 9 made of aluminum (AI) or gold (Au) and having a thickness of 15 μm is formed thereon using the same EB apparatus. Finally, sputtering is performed in a vacuum to form a protective film 10 made of silicon dioxide, for example.
form. The thickness of this protective film 10 is the low resistance metal thin film 9
The film thickness is 1°15 μm or more.
このようにして本実施例では、集積回路の電極３と強磁
性体薄膜８とをコンタクトホール６を介して電気的に安
定して接続させることができる。In this manner, in this embodiment, the electrode 3 of the integrated circuit and the ferromagnetic thin film 8 can be electrically stably connected via the contact hole 6.
すなわち、コンタクトホール６の内壁には段部７が形成
されるとともに、電極３の外壁にはＳＯＧ膜４による傾
斜面４ａが形成されているため、強磁性体薄膜８はこれ
らの段部７および傾斜面４ａに沿って滑らかに形成され
る。したがって、電極３およびコンタクトホール６の角
部において強磁性体薄膜８に段切れが生ずることがなく
、安定したステップカバレージがなされる。That is, since a step 7 is formed on the inner wall of the contact hole 6 and an inclined surface 4a made of the SOG film 4 is formed on the outer wall of the electrode 3, the ferromagnetic thin film 8 is formed on the step 7 and the slope 4a formed on the outer wall of the electrode 3. It is formed smoothly along the inclined surface 4a. Therefore, no breaks occur in the ferromagnetic thin film 8 at the corners of the electrodes 3 and contact holes 6, and stable step coverage is achieved.
なお、ニッケル系合金で形成された強磁性体薄膜８は、
アルミニウムで形成される電極３とアルミニウム系合金
で形成される低抵抗金属薄膜９との間において中間層と
しての意義を有している。Note that the ferromagnetic thin film 8 made of a nickel-based alloy is
It serves as an intermediate layer between the electrode 3 made of aluminum and the low resistance metal thin film 9 made of an aluminum alloy.
すなわち、電極３のアルミニウムと低抵抗金属薄膜９の
金とは直接接触すると界面に合金層が形成され、電気的
接続が正常に行われないため、ニッケル系合金からなる
強磁性体薄膜８が介在することにより両者の間の電気的
接続を安定して行うものである。In other words, if the aluminum of the electrode 3 and the gold of the low-resistance metal thin film 9 come into direct contact, an alloy layer will be formed at the interface and the electrical connection will not be established properly. This ensures stable electrical connection between the two.
なお、上記実施例においては、コンタクトホール６の内
壁を２段構造としたが、段階的に孔径が広がるような３
以上の段差構造とすれば、よりステップカバレージが向
上する。また、電極３の側壁のＳＯＧ膜４は必須のもの
ではなく、電極３そのものに傾斜面４ａを形成するよう
にしてもよい。In the above embodiment, the inner wall of the contact hole 6 has a two-stage structure, but the inner wall of the contact hole 6 has a three-stage structure in which the hole diameter gradually increases.
With the above step structure, step coverage is further improved. Furthermore, the SOG film 4 on the side wall of the electrode 3 is not essential, and the electrode 3 itself may be provided with an inclined surface 4a.
さらに、シリコン基板１内に形成するトランジスタは、
バイポーラ型、ＭＯＳ型等の種類を問わないことは勿論
である。Furthermore, the transistor formed in the silicon substrate 1 is
Of course, it does not matter whether it is a bipolar type or a MOS type.
以上説明したように請求項１記載の集積化磁気センサの
製造方法によれば、半導体基板に集積回路を形成すると
ともに電極を形成した後、その上に強磁性体薄膜からな
る磁気抵抗素子を形成するに際し、予め電気的接続部の
内壁に段差構造を形成するようにしたので、強磁性体薄
膜を滑らかに形成できる。したがって、強磁性体薄膜の
段切れ現象を防止でき、ステップカバレージが向上し、
強磁性体薄膜、さらにはその上の導電性膜および保護膜
を電気的に安定した状態で形成することができる。As explained above, according to the method for manufacturing an integrated magnetic sensor according to claim 1, after forming an integrated circuit on a semiconductor substrate and forming electrodes, a magnetoresistive element made of a ferromagnetic thin film is formed thereon. At this time, since the step structure is formed in advance on the inner wall of the electrical connection portion, the ferromagnetic thin film can be formed smoothly. Therefore, step breakage of the ferromagnetic thin film can be prevented, step coverage is improved,
The ferromagnetic thin film, as well as the conductive film and protective film thereon, can be formed in an electrically stable state.
また、請求項２記載の集積化磁気センサの製造方法によ
れば、電極の外壁に傾斜面を形成するようにしたので、
電気的接続部の段差構造と相俟って強磁性体薄膜の段切
れ現象を防止することができる。Further, according to the method for manufacturing an integrated magnetic sensor according to claim 2, since an inclined surface is formed on the outer wall of the electrode,
Together with the step structure of the electrical connection portion, the phenomenon of step breakage in the ferromagnetic thin film can be prevented.
図面は本発明の実施例を表わすもので、第１図（ａ）〜
（ｄ）は本発明の一実施例に係わる集積化磁気センサの
製造工程を示す断面図、第２図は第１図の工程で製造さ
れた集積化磁気センサの製造方法の等価回路を示す図で
ある。
１・・・・・・シリコン基板、
３・・・・・・電極、
・・・・・・ＳＯＧ膜、
・・・・・・窒化膜、
・・・・・・コンタクト
・・・・・・段部、
・・・・・・強磁性体薄膜、
・・・・・・低抵抗金属薄膜、
０・・・・・・保護膜
ホール
（電気的接続部）
出 願 人
代 理 人
日本電気株式会社The drawings represent embodiments of the present invention, and FIGS.
(d) is a cross-sectional view showing the manufacturing process of an integrated magnetic sensor according to an embodiment of the present invention, and FIG. 2 is a diagram showing an equivalent circuit of the manufacturing method of the integrated magnetic sensor manufactured in the process of FIG. 1. It is. 1...Silicon substrate, 3...Electrode,...SOG film,...Nitride film,...Contact... Stepped portion, ...Ferromagnetic thin film, ...Low-resistance metal thin film, 0...Protective film hole (electrical connection part) Application Representative: NEC Co., Ltd. company
Claims (1)
る工程と、 前記電極を含む半導体基板上に絶縁性膜を形成する工程
と、 前記絶縁性膜に前記電極の接続面に達する電気的接続部
を形成するとともに、この電気的接続部の内壁に段部構
造を形成する工程と、 前記電気的接続部を含む絶縁性膜の表面に磁気抵抗素子
となる強磁性体薄膜を形成する工程と、前記強磁性体薄
膜上に導電性膜を形成する工程とを具備したことを特徴
とする集積化磁気センサの製造方法。 ２、前記絶縁性膜を形成する前に、電極の外壁に傾斜面
を形成する工程をさらに含むことを特徴とする請求項１
記載の集積化磁気センサの製造方法。[Claims] 1. A step of forming an electrode on a semiconductor substrate on which an integrated circuit is formed, a step of forming an insulating film on the semiconductor substrate including the electrode, and a step of forming the electrode on the insulating film. forming an electrical connection part reaching the connection surface and forming a stepped structure on the inner wall of the electrical connection part; and a step of forming a ferromagnetic material to serve as a magnetoresistive element on the surface of the insulating film including the electrical connection part. 1. A method for manufacturing an integrated magnetic sensor, comprising the steps of: forming a magnetic thin film; and forming a conductive film on the ferromagnetic thin film. 2. The method further comprises the step of forming an inclined surface on the outer wall of the electrode before forming the insulating film.
A method of manufacturing the integrated magnetic sensor described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2197649A JP2626200B2 (en) | 1990-07-27 | 1990-07-27 | Manufacturing method of integrated magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2197649A JP2626200B2 (en) | 1990-07-27 | 1990-07-27 | Manufacturing method of integrated magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0484471A true JPH0484471A (en) | 1992-03-17 |
| JP2626200B2 JP2626200B2 (en) | 1997-07-02 |
Family
ID=16378010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2197649A Expired - Lifetime JP2626200B2 (en) | 1990-07-27 | 1990-07-27 | Manufacturing method of integrated magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2626200B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225154B1 (en) | 1993-07-27 | 2001-05-01 | Hyundai Electronics America | Bonding of silicon wafers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6854796B2 (en) | 2018-11-08 | 2021-04-07 | 三菱電機株式会社 | Semiconductor sensor device |
-
1990
- 1990-07-27 JP JP2197649A patent/JP2626200B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225154B1 (en) | 1993-07-27 | 2001-05-01 | Hyundai Electronics America | Bonding of silicon wafers |
| US6570221B1 (en) | 1993-07-27 | 2003-05-27 | Hyundai Electronics America | Bonding of silicon wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2626200B2 (en) | 1997-07-02 |
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