JPH0486535A - Resistance bridge in strain resistance apparatus - Google Patents
Resistance bridge in strain resistance apparatusInfo
- Publication number
- JPH0486535A JPH0486535A JP2202677A JP20267790A JPH0486535A JP H0486535 A JPH0486535 A JP H0486535A JP 2202677 A JP2202677 A JP 2202677A JP 20267790 A JP20267790 A JP 20267790A JP H0486535 A JPH0486535 A JP H0486535A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- strain gauge
- resistance
- resistance value
- strain gauges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 18
- 238000005224 laser annealing Methods 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 4
- 229910000077 silane Inorganic materials 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Measurement Of Force In General (AREA)
- Measuring Fluid Pressure (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、圧カセンサ、加速度センサ等に利用されてい
る歪抵抗装置の抵抗ブリッジに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resistance bridge of a strain resistance device used in pressure sensors, acceleration sensors, and the like.
歪抵抗装置は、機械歪による電気抵抗の変化所謂ピエゾ
抵抗効果を利用したもので、ピエゾ抵抗効果を奏する歪
ゲージを、機械的応力を受は歪を生ずる起歪体に付設し
、起歪体の変動を電気抵抗の変化として検知し、この抵
抗値変化に基づいて起歪体に加わった応力を計測し、被
測定対象である圧力や加速度を検出するものである。具
体的には起歪体を片持支持としたカンチレバータイプや
、枠体に膜を張設したダイヤフラムタイプのものが存在
し、歪ゲージによる分類としては歪ゲージにその表面に
歪ゲージを拡散により形成する拡散型、更には起歪体の
表面に直接半導体薄膜による歪ゲージを形成する半導体
薄膜型等が知られている。A strain resistance device utilizes the so-called piezoresistance effect, which is a change in electrical resistance due to mechanical strain. This method detects fluctuations in electrical resistance as changes in electrical resistance, measures the stress applied to the strain body based on this change in resistance value, and detects the pressure and acceleration of the object to be measured. Specifically, there are cantilever types in which the strain-generating body is cantilever-supported, and diaphragm types in which a membrane is stretched over the frame.Classification by strain gauges includes strain gauges with strain gauges attached to the surface by diffusion. A diffusion type in which a strain gauge is formed, and a semiconductor thin film type in which a strain gauge is formed by a semiconductor thin film directly on the surface of a strain generating body are known.
前記の各タイプの内、半導体薄膜型が検出悪魔及び耐久
性のバランスの良さから最も使い易いものと注目されて
いる。Among the above-mentioned types, the semiconductor thin film type is attracting attention as being the easiest to use because of its good balance between detection efficiency and durability.
ところで半導体薄膜型の歪抵抗装置は、起歪体（カンチ
レバー本体又はダイヤフラム膜体）の表面に周知の半導
体薄膜製造技術で半導体薄膜型の歪ゲージを形成するも
のであるが、歪ゲージは所定の個所に４個形成し、これ
をブリッジ回路に接続し、抵抗値の変化を電圧値の変化
として検出している、具体的には第４図の回路図に示す
通り、右回りに歪ゲージたる抵抗Ｒ，，Ｒｔ、Ｒｓ、Ｒ
４をループ状に接続しくブリッジ回路接続）、ＲＩＲ４
接続点とＲ！ Ｒｓ接続点との間に所定の電圧■。を印
加し、ＲＩＲｚ接続点とＲ３Ｒ，接続点とから検出出力
Ｖｏｕｔを取り出すが、予め各抵抗の抵抗値においてＲ
９・Ｒｓ ＝ Ｒｚ・Ｒ４が成立しているとＶｏｕｔ＝
０であり、抵抗Ｒ３及びＲ３の抵抗値が歪によって変化
することでＶｏｕｔ≠０となり歪の程度が検出されるも
のである。従って起歪体上に半導体薄膜型の歪ゲージを
形成する際には前記の条件を満足させる必要がある。し
かし、各歪ゲージを設計通り誤差がない状態に形成する
ことは現実上困難である。このため起歪体上に歪ゲージ
を形成した後、前記のブリッジ回路のバランス調節を行
っていたものである。By the way, a semiconductor thin film type strain resistance device is one in which a semiconductor thin film type strain gauge is formed on the surface of a strain generating body (cantilever main body or diaphragm membrane body) using a well-known semiconductor thin film manufacturing technology. Four strain gauges are formed at each location and connected to a bridge circuit to detect changes in resistance as changes in voltage. Specifically, as shown in the circuit diagram in Figure 4, strain gauges are connected clockwise. Resistance R,, Rt, Rs, R
4 in a loop (bridge circuit connection), RIR4
Connection point and R! A predetermined voltage ■ between the Rs connection point and ■. is applied and the detection output Vout is taken out from the RIRz connection point and the R3R connection point.
If 9・Rs = Rz・R4 is established, Vout=
0, and when the resistance values of resistors R3 and R3 change due to strain, Vout≠0 and the degree of strain is detected. Therefore, when forming a semiconductor thin film type strain gauge on a strain-generating body, it is necessary to satisfy the above-mentioned conditions. However, it is actually difficult to form each strain gauge without error as designed. For this reason, the balance of the bridge circuit was adjusted after forming a strain gauge on the strain body.
従来のバランス調整手段は、第５図に示すように可変抵
抗Ｒｘを外部回路として付加し、可変抵抗Ｒｘの調整で
ブリッジ回路の平衡を実現したものである。In the conventional balance adjustment means, as shown in FIG. 5, a variable resistor Rx is added as an external circuit, and the balance of the bridge circuit is realized by adjusting the variable resistor Rx.
〔発明が解決しようとする課題〕
前述したように半導体薄膜型の歪抵抗装置には、歪ゲー
ジブリッジ回路の平衡を実現するための調整が必要であ
り、而も従前の調整手段としては外部調整抵抗の接続が
採用されている。しかし、外部調整抵抗を用いることは
、装置の小型化達成の大きな障害であり、また被測定個
所の雰囲気条件の変化によってブリッジ回路の平衡調整
程度も相違し、更には外部調整抵抗と被測定個所即ち歪
ゲージの雰囲気条件に変化が生じても対応できない等の
技術的課題を有している。[Problems to be Solved by the Invention] As mentioned above, the semiconductor thin film type strain resistance device requires adjustment to achieve balance in the strain gauge bridge circuit, and the conventional adjustment means have been to use external adjustment. A resistive connection is used. However, using an external adjustment resistor is a major obstacle to achieving miniaturization of the device, and the degree of balance adjustment of the bridge circuit also differs depending on changes in the atmospheric conditions at the location to be measured. That is, there are technical problems such as the inability to cope with changes in the atmospheric conditions of the strain gauge.
そこで本発明は、歪ゲージそのものの抵抗値調整によっ
てブリッジ回路の平衡を達成する抵抗ブリッジを提案し
たものである。Therefore, the present invention proposes a resistance bridge that achieves balance in the bridge circuit by adjusting the resistance value of the strain gauge itself.
本発明に係る歪抵抗装置に於ける抵抗ブリッジは、起歪
体上にブリッジ接続したポリシリコン薄膜による歪ゲー
ジを形成してなる歪抵抗装置に於いて、歪ゲージの一部
にレーザを照射して一部の結晶粒の大きさを変化せしめ
て所望の抵抗値としたことを特徴としたものである。A resistance bridge in a strain resistance device according to the present invention is a strain resistance device in which a strain gauge is formed by a polysilicon thin film bridge-connected on a strain body, and a portion of the strain gauge is irradiated with a laser. This feature is characterized in that the size of some of the crystal grains is changed to obtain a desired resistance value.
アモルファスシリコンに対してレーザアニールを照射す
ることによりポリ化した場合、ポリシリコンの結晶粒の
大きさはレーザの強さによって左右され、結晶粒の大小
は抵抗値を相違せしめる。When amorphous silicon is polysiliconized by irradiating it with laser annealing, the size of the crystal grains of the polysilicon is influenced by the intensity of the laser, and the size of the crystal grains makes the resistance value different.
従って常法通り起歪体上にポリシリコン薄膜からなる歪
ゲージを形成し、各ゲージに電極を接続し、適宜な電圧
を印加して歪ゲージのブリッジ回路の平衡を調べ、抵抗
値を調整したい歪ゲージの一部に再度レーザを照射する
と、レーザの強度によってレーザーアニール後の結晶粒
の大きさが変化し抵抗値を変化せしめるので、所望の抵
抗値とすると歪ゲージのブリッジ回路の平衡が達成され
る。Therefore, we would like to form a strain gauge made of polysilicon thin film on a strain body as usual, connect electrodes to each gauge, apply an appropriate voltage, check the balance of the bridge circuit of the strain gauge, and adjust the resistance value. When a part of the strain gauge is irradiated with the laser again, the size of the crystal grains after laser annealing changes depending on the laser intensity, which changes the resistance value, so if the desired resistance value is achieved, the strain gauge bridge circuit will be balanced. be done.
次に本発明の実施例をカンチレバータイプの歪抵抗装置
の場合を例にして説明する。Next, an embodiment of the present invention will be described using a cantilever type strain resistance device as an example.
カンチレバータイプの歪抵抗装置は、片持支持される基
板１表面にポリシリコン薄膜からなる歪ゲージを形成し
てなるもので、前記形成手段は常法の薄膜製造技術で実
施できるが、次に本発明に最適と認められる製造工程に
基づいて説明する。A cantilever type strain resistance device is formed by forming a strain gauge made of a polysilicon thin film on the surface of a substrate 1 that is supported in a cantilever manner. The explanation will be based on a manufacturing process that is recognized as optimal for the invention.
銅合金、ニッケル基合金、ステンレス鋼等で形成された
カンチレバーの基板１０表面にＰ−ＣＶＤ法によって酸
化シラン（ＳｉＯ□）の絶縁層を形成し、次に反応ガス
をシラン（ＳｉＨ４）及びジボラン（ＢＸＬ）として同
様にＰ−ＣＶＤ法で絶縁層の表面に所定の不純物として
ボロン（Ｂ）がドーピングされたアモルファスシリコン
薄膜を形成する。次に適宜な熱処理を施して、アモルフ
ァスシリコン薄膜内の水素を放出せしめ、歪ゲージ２１
．２２．２３．２４ （Ｒ５，Ｒ１，Ｒ１＋ Ｒ４）を
形成せんとする個所にエキシマレーザを照射してアニー
ルを施し、前記アモルファスシリコン薄膜の一部をポリ
シリコンに変性せしめ、所定のパターニングを行って歪
ゲージ２１〜２４を形成するものである。但し、前記の
レーザーアニールにおいて、レーザの強さを３００ｍｊ
／ｄで実施し、而も歪ゲージ２１〜２３のパターニン
グは０．ｌｍＸ１ｍとし、歪ゲージ２４は０．２ｍＸ２
ｍとし、歪ゲージ２１〜２３は約１．５にΩ、歪ゲージ
２４は約１．５７５にΩ（約５％増）に形成する。次に
常法通り電極３をアルミニウムの真空蒸着及びパタニン
グで形成して歪ゲージ２１〜２４を電極３でフルブリッ
ジに接続する。An insulating layer of silane oxide (SiO□) is formed on the surface of the cantilever substrate 10 made of copper alloy, nickel-based alloy, stainless steel, etc. by the P-CVD method, and then a reactive gas is applied to silane (SiH4) and diborane ( As BXL), an amorphous silicon thin film doped with boron (B) as a predetermined impurity is formed on the surface of the insulating layer by the P-CVD method. Next, appropriate heat treatment is performed to release hydrogen in the amorphous silicon thin film, and the strain gauge 21
．． 22.23.24 The part where (R5, R1, R1 + R4) is to be formed is irradiated with an excimer laser and annealed, a part of the amorphous silicon thin film is modified into polysilicon, and a predetermined patterning is performed. It forms strain gauges 21-24. However, in the laser annealing described above, the laser intensity was set to 300mj.
/d, and the patterning of strain gauges 21 to 23 was carried out at 0. lmX1m, strain gauge 24 is 0.2mX2
m, the strain gauges 21 to 23 are formed to approximately 1.5 Ω, and the strain gauge 24 is formed to approximately 1.575 Ω (approximately 5% increase). Next, the electrode 3 is formed by vacuum evaporation and patterning of aluminum in a conventional manner, and the strain gauges 21 to 24 are connected to the electrode 3 in a full bridge.
以上が歪抵抗装置そのものの形成工程で、本発明は次の
ブリッジ回路の平衡を実現する調整方法に特徴を有する
もので、理論的には歪ゲージ２４の約０．２８−幅ａに
対して５０ｂｊ／ｃｉ！の強さのエキシマレーザを照射
し、再度レーザーアニールを実施すると、当該個所のポ
リシリコンは、従前より大きな結晶粒で再結晶して歪ゲ
ージ２４の抵抗値は約１．５にΩとなる。従って他の歪
ゲージ２１〜２３が必ずしも正確に１．５にΩに形成さ
れるものでないので、電極３に第４図に示すような電圧
印加並びに出力チエツクを実施しながら、前述の調整の
ためのレーザーアニールを実施し、ブリッジ回路の平衡
を達成するものである。而かして第３図に示すように基
板１に重り４を付設し、歪抵抗装置本体部５に他端を固
定し、加速度センサ等として利用するものである。The above is the process of forming the strain resistance device itself, and the present invention is characterized by the following adjustment method for realizing the balance of the bridge circuit. 50bj/ci! When the laser annealing is performed again by irradiating an excimer laser with a strength of , the polysilicon at the location is recrystallized with larger crystal grains than before, and the resistance value of the strain gauge 24 becomes approximately 1.5 Ω. Therefore, since the other strain gauges 21 to 23 are not necessarily formed at exactly 1.5 Ω, while applying voltage to the electrode 3 and checking the output as shown in FIG. Laser annealing is performed to achieve balance of the bridge circuit. As shown in FIG. 3, a weight 4 is attached to the substrate 1, and the other end is fixed to the strain resistor main body 5 to be used as an acceleration sensor or the like.
尚、本発明は前記実施例に限定されるものでなく、歪ゲ
ージとしてポリシリコン薄膜を採用しているものであれ
ば、カンチレバータイプ以外のダイヤフラムタイプのも
のにも適用され、且つポリシリコン薄膜自体の製造過程
は任意である。It should be noted that the present invention is not limited to the above embodiments, but can be applied to diaphragm type strain gauges other than the cantilever type, as long as a polysilicon thin film is used as the strain gauge, and the polysilicon thin film itself The manufacturing process is optional.
本発明は以上のように歪ゲージにポリシリコン薄膜を採
用し、且つ歪ゲージをフルブリッジ接続してなる歪抵抗
装置に於いて、ブリッジ回路形成後に、歪ゲージの一部
にレーザを照射して結晶粒の大きさを変化せしめて抵抗
値の調整を行い、ブリッジ回路の平衡を実現したもので
、従来の調整用の外部抵抗を必要としないため、外部調
整抵抗が有していた種々の技術的課題、例えば装置の小
型化、使用時毎の調整の必要性、信軌性等の問題が解消
されたものである。As described above, the present invention provides a strain resistance device in which a polysilicon thin film is used as a strain gauge, and the strain gauge is connected in a full bridge, by irradiating a part of the strain gauge with a laser after forming the bridge circuit. The resistance value is adjusted by changing the size of the crystal grains to achieve balance in the bridge circuit, and as it does not require the conventional external resistance for adjustment, it has the ability to overcome the various technologies that external adjustment resistors had. Problems such as miniaturization of the device, need for adjustment each time it is used, and reliability problems have been solved.
第１図はカンチレバー基板の平面図、第２図は同一部拡
大図、第３図は使用状態を示す側面図、第４図は歪ゲー
ジのブリッジ回路図、第５図は従来の調整例の回路図で
ある。
１一基板
２Ｌ ２２．２３．２ｔ−−歪ゲージ（抵抗体）３−電
極
４− 重り
第２図Fig. 1 is a plan view of the cantilever substrate, Fig. 2 is an enlarged view of the same part, Fig. 3 is a side view showing the state of use, Fig. 4 is a bridge circuit diagram of the strain gauge, and Fig. 5 is a conventional adjustment example. It is a circuit diagram. 1 - Substrate 2L 22.23.2t - Strain gauge (resistor) 3 - Electrode 4 - Weight Fig. 2
Claims (1)
よる歪ゲージを形成してなる歪抵抗装置に於いて、歪ゲ
ージの一部にレーザを照射して一部の結晶粒の大きさを
変化せしめて所望の抵抗値としたことを特徴とする歪抵
抗装置に於ける抵抗ブリッジ。(1) In a strain resistance device in which a strain gauge is formed by a polysilicon thin film bridge-connected on a strain body, part of the strain gauge is irradiated with a laser to change the size of some crystal grains. A resistance bridge in a strain resistance device characterized by having at least a desired resistance value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2202677A JPH0486535A (en) | 1990-07-31 | 1990-07-31 | Resistance bridge in strain resistance apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2202677A JPH0486535A (en) | 1990-07-31 | 1990-07-31 | Resistance bridge in strain resistance apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0486535A true JPH0486535A (en) | 1992-03-19 |
Family
ID=16461328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2202677A Pending JPH0486535A (en) | 1990-07-31 | 1990-07-31 | Resistance bridge in strain resistance apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0486535A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005100939A1 (en) * | 2004-04-13 | 2005-10-27 | Mnt Innovations Pty Ltd | Fabricated strain sensor |
| JP2006200940A (en) * | 2005-01-18 | 2006-08-03 | Japan Atom Power Co Ltd:The | Strain measurement sensor and valve open / close detection sensor |
| CN105203019A (en) * | 2015-10-19 | 2015-12-30 | 上海集成电路研发中心有限公司 | Flexible active pressure/strain sensor structure and manufacturing method thereof |
-
1990
- 1990-07-31 JP JP2202677A patent/JPH0486535A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005100939A1 (en) * | 2004-04-13 | 2005-10-27 | Mnt Innovations Pty Ltd | Fabricated strain sensor |
| US7434475B2 (en) | 2004-04-13 | 2008-10-14 | Royal Melbourne Institute Of Technology | Fabricated strain sensor |
| CN100456006C (en) * | 2004-04-13 | 2009-01-28 | 皇家墨尔本理工大学 | Fabricated strain sensor |
| JP2006200940A (en) * | 2005-01-18 | 2006-08-03 | Japan Atom Power Co Ltd:The | Strain measurement sensor and valve open / close detection sensor |
| CN105203019A (en) * | 2015-10-19 | 2015-12-30 | 上海集成电路研发中心有限公司 | Flexible active pressure/strain sensor structure and manufacturing method thereof |
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