JPH048883B2 - - Google Patents
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- JPH048883B2 JPH048883B2 JP58034824A JP3482483A JPH048883B2 JP H048883 B2 JPH048883 B2 JP H048883B2 JP 58034824 A JP58034824 A JP 58034824A JP 3482483 A JP3482483 A JP 3482483A JP H048883 B2 JPH048883 B2 JP H048883B2
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Description
本発明はCu系基体の表面の一部又は全部にAg
又はAg合金を被覆した電子部品材料に関するも
ので、特に部品材料に要求される諸特性を満足す
る経済的な材料を提供するものである。
一般にAg又はAg−In,Ag−Pd,Ag−Au等
のAg合金は良導電性で、半田付け性及び耐食性
が優れており、これをCu又はCu−Zn,Cu−Sn,
Cu−Be,Cu−Ti,Cu−Fe等のCu合金からなる
基体の表面の一部又は全部に被覆したものが電子
部品材料に用いられている。例えばスイツチ,コ
ネクター等の接点部品又は半導体,集積回路,各
種部品等の基体或いはリード材は何れもAg又は
Ag合金の特性を利用して半田付けやろう付けに
より組立てられ、それ自身プリント回路基板など
に半田付けにより取付けられるため、半田付け性
は不可欠の条件となつている。
Cu及びCu合金は常温で保管しても強固な酸化
皮膜を生成し、電子部品の組立工程における樹脂
モールド,キユアー,半田付け,性能調整のエー
ジング等の高温環境において厚い酸化スケールを
生成し、半田付け性を著しく阻害する。半田付け
に活性フラツクスを使用することも知られている
が、残留フラツクスは致命的な腐食障害の原因と
なるため、入念な洗浄が必要となり、電子部品等
には適用できない。また大気を遮断して還元性雰
囲気中で部品を組立てることも考えられるが、こ
の方法は設備的にも経済的にも実用的でない。
電子部品にAg被覆Cu系材料を用いる理由は高
温環境において良好な半田付け性を得るためであ
り、もう一つの理由は表面に酸化皮膜が生成し難
く、接点時に要求される電気接続性が良好なこと
である。このようなAgによる効果はAu,Pd,
Pt等の貴金属でも得ることができるが、何れも
Agの10〜100倍、或いはそれ以上高価なもので、
工業的には不経済であり、通常はAg又はAg合金
を2〜3μ又はそれ以上の厚さに被覆している。
しかるに電子工業の飛躍的発展と共に、経済性の
みならず省資源の立場からもAgの可及的な節約
が強く望まれている。しかしながらAgの被覆厚
さを薄くすると次の欠陥が発生する。
(1) 製造方法及び条件にもよるが、Ag層がポー
ラスとなり、所謂ピンホールが生成して基材が
露出する。
(2) 固相反応により基材の卑金属成分が表面に到
達して蓄積する。特にこの反応の進行は温度の
指数函数の関係にあり、高温条件で顕著とな
る。
高価なAuを被覆したものでも全く同様な問題
が起り、これを防止するため基体とAu層間にNi
からなる中間層を設けたものが実用化されてお
り、前記欠陥を実質的に軽減するため通常1〜
2μ以上、或いはそれ以上の厚さに中間層を設け、
その上に用途に応じて厚さ0.2〜数μのAgをメツ
キなどにより被覆したものがコネクターなどの接
点に用いられている。Ag被覆したものでも基体
とAg層間にNiからなる中間層を設けたものが、
半導体リードフレーム、各種接点、端子等に実用
化され、通常0.5〜3μの厚さに中間層を設け、ピ
ンホール腐食を防止してAg表面を清浄に保つと
共に、基体からの卑金属の高温拡散を防止してい
る。しかしながら高温環境において特異な半田付
け性の低下や時にはAg層の剥離が報告されてい
る。
本発明者等はこれに鑑み種々検討の結果、Au
被覆では全く起り得ないAg被覆特有の現象であ
ることを知見した。即ち180℃前後の温度からAg
層中を大気中の酸素が透過し易くなり、透過酸素
は原子状のためか特に活性でAg層下のNiを酸化
する。Niの酸化はAg層とNi層の界面の金属結合
を断ち切り密着力を激減させる。またAgは半田
浴に迅速に溶解し、実用条件では1秒間に厚さ2
〜3μの溶解が起る。従つて半田付けにおいて薄
いAg層が溶解し、半田と全く濡れない硬いNiO
表面が露出し、半田付け性を阻害する。またNi
層を設けない場合は基体表面が厚く酸化し、同様
の結果が生じる。
更にNi層を設けたAg被覆Cu系材料では、機械
的変形に際し、AgやCuに比べて硬質のNi層に外
力が集中し、Ni層を起点にAg層の表面に達する
微小のクラツクが発生し易い。電子部品は精密加
工により造られるため、曲げや絞り加工におい
て、微小のクラツクを発生すると、これが基体の
露出部となつて腐食の原因となるばかりか、腐食
物の体積膨脹によりクラツクが拡大し、重大な欠
陥となる。
本発明はこのような知見に基づき、これを解消
するため種々研究の結果、部品材料として要求さ
れる諸特性を満足し得る経済的な銀被覆銅系電子
部品材料を開発したもので、Cu系基体の少なく
とも一部表面に、Ag又はAg合金を被覆した材料
において、基体とAg又はAg合金層間に厚さ0.01
〜0.1μのNi,Co又はその合金(但しNi−Zn合金
を除く)からなる中間層を設けたことを特徴とす
るものである。
即ち本発明は、Cu又はCu合金からなる線、棒、
条、板等を基体とするか、又はその一部又は全部
を部品形状に加工して基体とし、その表面の一部
又は全部に厚さ0.01〜0.1μのNi,Co又はその合
金(但しNi−Zn合金を除く)からなる中間層
(以下Ni,Co中間層と略記)を形成し、その上に
Ag又はAg合金層(以下Ag層と略記)を被覆し
たもので、Ni,Co中間層としてはNi,Coの外に
Ni−Co,Ni−P,Ni−B,Co−P,Co−Sn,
Ni−Sn,Ni−Fe等のNi−Zn以外の合金を用い、
特にその厚さを0.01〜0.1μ、望ましくは0.02〜
0.08μとすることにより、従来のNi層に基因する
諸欠陥を改善したもので、従来のNi層が拡散バ
リヤーとして作用させるため、厚さ1〜2μ或い
はそれ以上厚くする必要があるとされていたのに
対し、本発明では逆にNi,Co中間層を薄くする
ことにより一種のフイルターとも称すべき特異な
作用によりり目的を達成し得たものである。
従来のNi層はAgと拡散せず、Cuとの反応も実
用条件では起り難いのに対し、Ni,Co中間層は
厚さ0.01〜0.1μとすることにより、Agと拡散せ
ず、基体の一部成分元素、例えばCu,Zn,Sn,
In,Cd等をわずかではあるが透過してAg層に拡
散し、Ag層を透過する大気中の酸素の透過を抑
制してNi,Co中間層の表面酸化を防止する。
Cu,Zn,Sn,In,Cd等は何れもAgに固溶して
合金化し、かつ酸素との親和力が強い元素であ
り、Ag層を透過する酸素と結合してNi,Co中間
層の表面に達するのを阻止する。しかしてNi,
Co中間層の厚さが0.01μ未満では上記諸元素の透
過が過剰となり、従来のNi層を使用しない場合
と同様の欠陥を生ずるようになり、0.1μを越える
と従来のNi層の場合と同様バリヤーとしての作
用に変り、Ni,Co中間層の表面酸化が起り、こ
れによる欠陥が発生するようになる。またNi,
Co中間層をこのように薄くすることにより加工
性が著しく改善され、高品質の部品が得られる。
即ち薄いため加工により外力の集中が少なくな
り、割れにくくなると共に例え割れても微細なた
めAg層には達しない。
Ni,Co中間層としては、Niが最も有効であ
る。即ちNiはNi,Co中間層中最も軟質で、拡散
透過性も大きく製造時に最も能率的に形成するこ
とができる。また基体としてはCu−Zn系合金、
所謂黄銅(Zn20〜40%)が最も有効である。即
ちこの合金は最も安価で電気的、機械的特性に優
れ、かつZnはCuよりも低融点で拡散速度が大き
く、Agに固溶し易く酸素との親和力が著しく大
きい。更にAg層としては、従来2〜3μ又はそれ
以上の厚さを必要としているが、本発明によれば
0.2〜2μ程度の厚さで十分であり、Ag層の厚さが
0.2μ未満では本発明によつても品質が不十分とな
り、2μ以上に厚くても効果の増大が期待できず
不経済である。
本発明材料は以上の構成からなり機械的クラツ
ド法、蒸着法、スパツタリング法等任意の方法で
造ることができるが電気メツキ法が最も実用的で
ある。即ちNi,CCo,Ag等は最もメツキし易い
金属の部類に属し、所望の位置に被覆することが
容易であり、連続的に行なうこともできる。Ni
やCoは電流効率が殆んど100%で、フアラデイー
則に従つて通電量を管理することにより、所望の
厚さに厳密にメツキすることができる。Ni,Co
メツキには硫酸塩浴、スルフアミン酸浴、ホウフ
ツ化物浴等を用い、必要に応じて合金成分を添加
することにより合金メツキも可能である。Agメ
ツキにはシアン化物浴、チオシアン化物浴、ピロ
リン酸浴、ヨウ化物浴等を使用し、合金メツキも
可能である。
以下本発明を実施例について詳細に説明する。
実施例 (1)
厚さ0.42mmの黄銅板(Zn35%)を用い、常法に
より脱脂、酸洗してから下記メツキ浴を用いて第
1表に示す厚さのNiメツキとAgメツキを行なつ
てダイオード用リードフレーム材を製造した。
Niメツキ
Ni(SO3NH2)2 500g/
NiCl 30g/
H3BO3 30g/
P H 2.5
浴 温 50℃
電流密度 2.5A/dm2
Agストライクメツキ
AgCN 3g/
KCN 30g/
浴 温 20℃
電流密度 3A/dm2
Agメツキ
AgCN 30g/
KCN 40g/
K2CO3 20g/
浴 温 20℃
電流密度 1.5A/dm2
ダイオード用リードフレーム材は通常短冊状
(巾5.0mm、長さ0.5mm)に打抜き、直角に折り曲
げ(R=0.5mm)、一端にSiチツプを半田付け(95
%Pb−5%Sn、温度320℃、1分間)した後、樹
脂で封止キユアー(温度180℃、5時間大気中)
され、しかる後プリント回路板に半田付けされ
る。この半田付けにおいて、温度235℃の共晶半
田浴中に5秒間デイツプしたときの濡れ面積90%
以上が要求される。
上記フレーム材について保管及び折曲げ加工に
よる劣化を保証するため100℃の温度で24時間加
熱してから半田浴(95%Pb−5%Sn、温度320
℃)に一端を5秒間デイツプして濡れ面積を測
定、次に大気中180℃の温度で5時間加熱してか
ら他端を温度235℃の共晶半田浴中に5秒間デイ
ツプして濡れ面積を測定した。これ等の結果を第
1表に併記した。
In the present invention, Ag is applied to part or all of the surface of a Cu-based substrate.
Or, it relates to an electronic component material coated with an Ag alloy, and in particular provides an economical material that satisfies various properties required for component materials. In general, Ag or Ag alloys such as Ag-In, Ag-Pd, and Ag-Au have good conductivity and excellent solderability and corrosion resistance.
Substrates made of Cu alloys such as Cu-Be, Cu-Ti, and Cu-Fe, whose surfaces are partially or completely coated, are used as materials for electronic components. For example, contact parts such as switches and connectors, base materials or lead materials of semiconductors, integrated circuits, various parts, etc. are all made of Ag or
Since they are assembled by soldering or brazing using the properties of Ag alloys, and are themselves attached to printed circuit boards by soldering, solderability is an essential condition. Cu and Cu alloys form a strong oxide film even when stored at room temperature, and thick oxide scales are formed in high-temperature environments such as resin molding, curing, soldering, and aging for performance adjustment in the assembly process of electronic parts. It significantly impairs the adhesion. It is also known to use activated flux for soldering, but residual flux causes fatal corrosion damage, requires careful cleaning, and cannot be applied to electronic parts. It is also conceivable to assemble the parts in a reducing atmosphere with the atmosphere shut off, but this method is not practical in terms of equipment or economy. The reason why Ag-coated Cu-based materials are used for electronic components is to obtain good solderability in high-temperature environments.Another reason is that oxide films are difficult to form on the surface, and the electrical connectivity required at the time of contact is good. That's true. This effect of Ag is due to Au, Pd,
It can also be obtained from precious metals such as Pt, but both
It is 10 to 100 times more expensive than Ag,
It is industrially uneconomical and is usually coated with Ag or an Ag alloy to a thickness of 2 to 3 microns or more.
However, with the dramatic development of the electronics industry, there is a strong desire to save Ag as much as possible not only from an economic standpoint but also from the standpoint of resource conservation. However, when the coating thickness of Ag is reduced, the following defects occur. (1) Depending on the manufacturing method and conditions, the Ag layer becomes porous, creating so-called pinholes and exposing the base material. (2) Base metal components of the base material reach the surface and accumulate due to solid phase reaction. In particular, the progress of this reaction is related to an exponential function of temperature, and becomes more pronounced under high temperature conditions. Exactly the same problem occurs with products coated with expensive Au, and to prevent this, Ni is added between the substrate and the Au layer.
In order to substantially reduce the above-mentioned defects, an intermediate layer consisting of
Provide an intermediate layer with a thickness of 2 μ or more, or
Depending on the application, the material is coated with Ag with a thickness of 0.2 to several microns by plating or the like, and is used for contacts such as connectors. Even with Ag coating, there is an intermediate layer made of Ni between the substrate and the Ag layer.
Practical in semiconductor lead frames, various contacts, terminals, etc., with an intermediate layer usually 0.5 to 3μ thick to prevent pinhole corrosion and keep the Ag surface clean, as well as to prevent high-temperature diffusion of base metals from the base. It is prevented. However, in high-temperature environments, it has been reported that the solderability deteriorates and sometimes the Ag layer peels off. In view of this, the present inventors have conducted various studies and found that Au
It was discovered that this phenomenon is unique to Ag coatings and cannot occur at all with coatings. In other words, Ag from a temperature of around 180℃
Oxygen in the atmosphere easily permeates through the layer, and the permeating oxygen is particularly active, perhaps because it is atomic, and oxidizes the Ni under the Ag layer. Oxidation of Ni breaks the metallic bond at the interface between the Ag layer and the Ni layer, drastically reducing the adhesion. In addition, Ag dissolves quickly in the solder bath, and under practical conditions, it dissolves in a thickness of 2 mm per second.
Dissolution of ~3μ occurs. Therefore, during soldering, the thin Ag layer dissolves, leaving a hard NiO layer that does not wet the solder at all.
The surface is exposed and inhibits solderability. Also Ni
If no layer is provided, the substrate surface will be thickly oxidized and similar results will occur. Furthermore, in Ag-coated Cu-based materials with a Ni layer, when mechanically deformed, external force concentrates on the Ni layer, which is harder than Ag or Cu, and small cracks are generated that start from the Ni layer and reach the surface of the Ag layer. Easy to do. Electronic components are manufactured through precision machining, so if a minute crack occurs during bending or drawing, not only will this become an exposed part of the base and cause corrosion, but the crack will also expand due to the volume expansion of the corrosive material. This is a serious defect. Based on this knowledge, and as a result of various studies to solve this problem, the present invention has developed an economical silver-coated copper-based electronic component material that can satisfy the various properties required as a component material. In materials where at least a portion of the surface of the substrate is coated with Ag or Ag alloy, there is a thickness of 0.01 between the substrate and the Ag or Ag alloy layer.
It is characterized by providing an intermediate layer made of Ni, Co, or alloys thereof (excluding Ni-Zn alloys) with a thickness of ~0.1μ. That is, the present invention provides wires, rods,
The base is a strip, plate, etc., or a part or all of it is processed into a part shape, and a part or the whole of the surface is coated with Ni, Co, or an alloy thereof with a thickness of 0.01 to 0.1μ (however, Ni -Excluding Zn alloy) (hereinafter abbreviated as Ni, Co intermediate layer), and on top of that,
It is coated with Ag or Ag alloy layer (hereinafter abbreviated as Ag layer), and is used as a Ni, Co intermediate layer in addition to Ni and Co.
Ni-Co, Ni-P, Ni-B, Co-P, Co-Sn,
Using alloys other than Ni-Zn such as Ni-Sn and Ni-Fe,
In particular, its thickness is 0.01~0.1μ, preferably 0.02~
By setting the thickness to 0.08μ, various defects caused by the conventional Ni layer have been improved.In order for the conventional Ni layer to act as a diffusion barrier, it is said that it is necessary to increase the thickness by 1 to 2μ or more. On the other hand, in the present invention, by making the Ni, Co intermediate layer thinner, the object was achieved through a unique action that could be called a kind of filter. Conventional Ni layers do not diffuse with Ag and reactions with Cu are unlikely to occur under practical conditions, whereas the Ni, Co intermediate layer has a thickness of 0.01 to 0.1μ, so it does not diffuse with Ag and reacts with Cu. Some component elements such as Cu, Zn, Sn,
A small amount of In, Cd, etc. permeate and diffuse into the Ag layer, suppressing the permeation of atmospheric oxygen through the Ag layer and preventing surface oxidation of the Ni, Co intermediate layer.
Cu, Zn, Sn, In, Cd, etc. are all elements that form a solid solution in Ag and form an alloy, and have a strong affinity for oxygen. prevent it from reaching. But Ni,
If the thickness of the Co intermediate layer is less than 0.01μ, the above elements will pass through excessively, causing the same defects as when no conventional Ni layer is used. Similarly, the surface oxidation of the Ni and Co intermediate layer occurs due to its function as a barrier, which causes defects. Also Ni,
This thinning of the Co interlayer significantly improves processability and results in high quality parts.
That is, since it is thin, the concentration of external force during processing is reduced, making it less likely to break, and even if it does break, it will be so small that it will not reach the Ag layer. Ni is most effective as the Ni, Co intermediate layer. That is, Ni is the softest of the Ni and Co intermediate layers, has high diffusion permeability, and can be formed most efficiently during manufacturing. In addition, the base material is a Cu-Zn alloy,
So-called brass (Zn 20-40%) is the most effective. That is, this alloy is the cheapest and has excellent electrical and mechanical properties, and Zn has a lower melting point and higher diffusion rate than Cu, is more easily dissolved in Ag, and has a significantly greater affinity for oxygen. Furthermore, the Ag layer conventionally requires a thickness of 2 to 3μ or more, but according to the present invention,
A thickness of about 0.2 to 2μ is sufficient, and the thickness of the Ag layer is
If it is less than 0.2 μm, the quality will be insufficient even in the present invention, and if it is thicker than 2 μm, no increase in effectiveness can be expected and it is uneconomical. The material of the present invention has the above structure and can be produced by any method such as mechanical cladding, vapor deposition, sputtering, etc., but electroplating is the most practical method. That is, Ni, CCo, Ag, etc. belong to the class of metals that are most easily plated, and can be easily coated on desired positions, and can be coated continuously. Ni
The current efficiency of or Co is almost 100%, and by controlling the amount of current according to Faraday's law, it is possible to precisely plate the desired thickness. Ni, Co
Alloy plating is also possible by using a sulfate bath, a sulfamic acid bath, a borofluoride bath, etc., and adding alloy components as necessary. For Ag plating, cyanide bath, thiocyanide bath, pyrophosphoric acid bath, iodide bath, etc. are used, and alloy plating is also possible. The present invention will be described in detail below with reference to examples. Example (1) A brass plate (35% Zn) with a thickness of 0.42 mm was degreased and pickled using the usual method, and then Ni plating and Ag plating were performed using the plating bath shown below to the thickness shown in Table 1. Manufactured lead frame materials for diodes. Ni plating Ni (SO 3 NH 2 ) 2 500g / NiCl 30g / H 3 BO 3 30g / PH 2.5 Bath temperature 50℃ Current density 2.5A/dm 2 Ag strike plating AgCN 3g / KCN 30g / Bath temperature 20℃ Current density 3A/dm 2 Agmetsuki AgCN 30g/ KCN 40g/ K 2 CO 3 20g/ Bath temperature 20℃ Current density 1.5A/dm 2 Lead frame material for diodes is usually punched into strips (width 5.0mm, length 0.5mm) , bend it at a right angle (R = 0.5 mm), and solder a Si chip to one end (95
%Pb-5%Sn, temperature 320℃, 1 minute), then sealed with resin and cured (temperature 180℃, 5 hours in air)
and then soldered to a printed circuit board. In this soldering, the wetted area is 90% when dipped for 5 seconds in a eutectic solder bath at a temperature of 235℃.
The above is required. To ensure that the above frame material does not deteriorate due to storage and bending, it is heated at a temperature of 100℃ for 24 hours, and then heated in a solder bath (95%Pb-5%Sn, temperature 320℃).
Measure the wetted area by dipping one end for 5 seconds in a eutectic solder bath at 235°C for 5 seconds, then heating it in air at 180°C for 5 hours, then dipping the other end in a eutectic solder bath at 235°C for 5 seconds was measured. These results are also listed in Table 1.
【表】
第1表から明らかなように、Ag厚さ1.2μにお
いてはNi厚さ0.02〜0.10μで両半田付け性が共に
優れていることが判る。これに対しNiを過剰厚
付けしたものは大気中加熱後の共晶半田付け性が
著しく低下し、Niを用いないものはAg厚さ2.5μ
でも不十分で、4.0μ以上必要とし、Ni厚さ1.0μの
ものはAg厚さ4.0μでも不十分であることが判る。
次に上記フレーム材を曲げ加工した後、端面を
ラツカーでシールしてからJIS−Z−2371に基づ
いて5%塩水噴霧試験を24時間行ない、曲げ部の
青色銅腐食物の発生状況を調べた。その結果本発
明部材には異常が認められなかつたが、比較材No.
7〜9には曲げ部に青色銅腐食物の発生が認めら
れ、特にNo.9では著しく、Niを用いない比較材
No.1では全面に緑青を発生した。
実施例 (2)
実施例(1)において本発明材No.4のNiメツキに
代えて、下記メツキ浴を用い、それぞれNi−7
%P合金、Ni−10%Co合金をメツキし、同様に
して、ダイオード用リードフレーム材を製造し
た。
Ni−7%合金メツキ
NiSO4 200g/
NiCl 15g/
H3PO3 25g/
H3BO3 30g/
浴 温 35℃
電流密度 3.0A/dm2
Ni−10%Co合金メツキ
NiSO4 240g/
CoSO4 15g/
NiCl2 30g/
H3BO3 30g/
浴 温 45℃
電流密度 4A/dm2
これ等について実施例(1)と同様の試験を行なつ
た。その結果Ni−7%P合金をメツキしたもの
では、濡れ面積は95%Pb−5%Sn浴で97%、共
晶半田浴で98%、Ni−10%Co合金をメツキした
ものでは、それぞれ93%と97%であつた。また5
%塩水噴霧試験では何等異常が認められなかつ
た。
実施例 (3)
実施例(1)において本発明材No.4の基体である黄
銅に代えて、第2表に示す銅及び銅合金を用い、
同様にしてダイオード用リードフレーム材を製造
した。これ等について実施例(1)と同様の試験を行
ない、濡れ面積を測定した。
その結果を第2表に併記した。[Table] As is clear from Table 1, both solderability is excellent when the Ag thickness is 1.2μ and the Ni thickness is 0.02 to 0.10μ. On the other hand, the eutectic solderability after heating in the atmosphere is significantly reduced in the case where Ni is applied too thickly, and the case where Ni is not used has an Ag thickness of 2.5 μm.
However, it is insufficient and requires 4.0μ or more, and it can be seen that even an Ag thickness of 4.0μ is insufficient for a Ni thickness of 1.0μ. Next, after bending the above frame material, the end faces were sealed with a lacquer and a 5% salt spray test was conducted for 24 hours based on JIS-Z-2371 to investigate the occurrence of blue copper corrosive substances in the bent parts. . As a result, no abnormalities were observed in the inventive member, but in comparison material No.
In No. 7 to 9, the occurrence of blue copper corrosion was observed in the bent part, and in No. 9, it was particularly noticeable compared to the comparative material that did not use Ni.
In No. 1, patina appeared on the entire surface. Example (2) In Example (1), the following plating baths were used instead of Ni plating of the invention material No. 4, and Ni-7 and Ni-7 were used, respectively.
%P alloy and Ni-10%Co alloy were plated and lead frame materials for diodes were produced in the same manner. Ni-7% alloy plating NiSO 4 200g / NiCl 15g / H 3 PO 3 25g / H 3 BO 3 30g / Bath temperature 35℃ Current density 3.0A/dm 2 Ni-10% Co alloy plating NiSO 4 240g / CoSO 4 15g / NiCl 2 30g / H 3 BO 3 30g / Bath temperature 45°C Current density 4A/dm 2 The same tests as in Example (1) were conducted on these. As a result, for the plated with Ni-7%P alloy, the wetted area was 97% in the 95%Pb-5%Sn bath, 98% in the eutectic solder bath, and 98% in the case of the plated with Ni-10%Co alloy. They were 93% and 97%. Also 5
% salt water spray test, no abnormalities were observed. Example (3) In Example (1), copper and copper alloys shown in Table 2 were used instead of brass, which is the base of the invention material No. 4,
A lead frame material for a diode was produced in the same manner. The same tests as in Example (1) were conducted on these and the wetted areas were measured. The results are also listed in Table 2.
【表】
第2表から明らかなように何れも両半田付け性
が優れており、中でも特にZnを含む洋白(Cu−
23%Zn−12%Ni合金)が最も優れていることが
判る。
実施例 (4)
厚さ0.25mmのリン青銅条を用い、常法により脱
脂、酸洗してから下記メツキ沿を用いて、第3表
に示す厚さのNiメツキ又はCoメツキを行ない、
その上に実施例(1)と同様にして厚さ1.2μのAgメ
ツキを行なつてコネクター用接点材を製造した。
Niメツキ
NiSO4 250g/
NiCl2 25g/
H3BO3 30g/
P H 2.5
浴 温 45℃
電流密度 1.5A/dm2
Coメツキ
CoSO4 450g/
NaCl 30g/
H3BO3 45g/
浴 温 50℃
電流密度 1.0A/dm2
コネクター用接点材は通常プレス成形後、端部
を電線と半田付けして接続し、接点部は約100g
の荷重でプリント基板上の回路のピンに装着する
もので、長期の使用に亘り接触抵抗が10mΩを越
えないことが条件になつている。接点部は通常の
接点と同様、相手側との接触を安定化するため凸
状の張出し加工が施されている。
接点材について保管及び成形加工時の劣化を保
証するため、温度60℃、湿度95%の恒温加湿条件
で1000時間保持した後、温度235℃の共晶半田浴
中に5秒間デイツプし、半田濡れ性を調べた。ま
た恒温加湿条件で1000時間保持した後、250℃の
温度に10分間加熱し、続いて大気中120℃の温度
で2000時間保持してから、先端半径4.0mmの半球
状Ag棒を100gの荷重で押し当て、電流100mA
で接触抵抗を測定した。更にコネクターに成形し
て同様の処理を施し、これにAgメツキしたピン
材(0.62mm角)を挿入して同様の接触抵抗を測定
した。
これ等の結果を第3表に併記した。[Table] As is clear from Table 2, both types have excellent solderability, especially nickel silver containing Zn (Cu-
It can be seen that the 23% Zn-12% Ni alloy) is the most excellent. Example (4) Using a phosphor bronze strip with a thickness of 0.25 mm, degrease and pickle it in the usual manner, and then perform Ni plating or Co plating with the thickness shown in Table 3 using the plating method shown below.
Thereon, Ag plating with a thickness of 1.2 μm was performed in the same manner as in Example (1) to produce a contact material for a connector. Ni-plated NiSO 4 250g / NiCl 2 25g / H 3 BO 3 30g / P H 2.5 Bath temperature 45℃ Current density 1.5A/dm 2 Co-plated CoSO 4 450g / NaCl 30g / H 3 BO 3 45g / Bath temperature 50℃ Current Density: 1.0A/dm 2 The contact material for the connector is usually press-molded and the end is soldered to the electric wire to connect it, and the contact part weighs approximately 100g.
It is attached to a pin of a circuit on a printed circuit board under a load of 100 Ω, and the condition is that the contact resistance does not exceed 10 mΩ over long-term use. Like normal contacts, the contact part is protruded into a convex shape to stabilize contact with the other party. In order to ensure that the contact material does not deteriorate during storage and molding processing, it is kept under constant temperature and humidified conditions at a temperature of 60℃ and humidity of 95% for 1000 hours, and then immersed in a eutectic solder bath at a temperature of 235℃ for 5 seconds to wet the solder. I looked into gender. After being kept under constant temperature and humid conditions for 1000 hours, heated to 250℃ for 10 minutes, and then kept in the air at 120℃ for 2000 hours, a hemispherical Ag rod with a tip radius of 4.0mm was loaded with 100g. Press with, current 100mA
The contact resistance was measured. Furthermore, a connector was molded and subjected to the same treatment, and an Ag-plated pin material (0.62 mm square) was inserted into it and the contact resistance was measured in the same manner. These results are also listed in Table 3.
【表】
第3表から明らかなように本発明材は半田付け
性及び接触抵抗の何れでも良好な特性を示す。こ
れに対し過剰の厚さのNi層を形成した比較材で
は加熱処理がないため半田付け性の劣化は認めら
れないが、接触抵抗が著しく増大し、またNi層
を用いない比較材でではAg層の厚さを4.5μ以上
とする必要があることが判る。
実施例 (5)
厚さ0.06mmのリン青銅条を用い、実施例(1)と同
様にしてNiメツキとAgメツキを行なつて第4表
に示すキーボードスイツチ用皿ばね材を製造し
た。皿ばね材は確実な電気接続と共にキー動作時
の微妙な指先感覚(クリツク感)を重視するた
め、リン青銅条の表面硬さをMHV(200g)210
〜230に管理されている。
この皿ばね材料について温度60℃、湿度95%の
恒温加湿条件で1000時間保持したものと、大気中
150℃の温度で1000時間保持したものについて、
実施例(4)と同様にして接触抵抗を測定した。また
この材料より直径8mmの皿ばねを成形してキーボ
ードスイツチを組立て、クリツク感を試験した。
これ等の結果を第4表に併記した。[Table] As is clear from Table 3, the materials of the present invention exhibit good properties in both solderability and contact resistance. On the other hand, with the comparative material with an excessively thick Ni layer, no deterioration in solderability was observed because there was no heat treatment, but the contact resistance increased significantly, and the comparative material with no Ni layer It can be seen that the layer thickness needs to be 4.5μ or more. Example (5) Using a phosphor bronze strip having a thickness of 0.06 mm, Ni plating and Ag plating were performed in the same manner as in Example (1) to produce disc spring materials for keyboard switches shown in Table 4. The surface hardness of the phosphor bronze strip is set to MHV (200g) 210 because the disc spring material emphasizes reliable electrical connection as well as subtle fingertip sensation (click feeling) when operating keys.
~230 managed. This disc spring material was kept under constant temperature and humidified conditions of 60℃ and 95% humidity for 1000 hours, and
For those kept at a temperature of 150℃ for 1000 hours,
Contact resistance was measured in the same manner as in Example (4). Also, a keyboard switch was assembled by molding a disc spring with a diameter of 8 mm from this material, and the click feeling was tested. These results are also listed in Table 4.
【表】
第4表から明らかなように本発明材は何れも良
好な接触抵抗とクリツク感を示すのに対し、Ni
層が過剰な比較材では加熱処理が比較的低温のた
め接触抵抗の劣化は認められないが、ばね性が微
妙に変化し、クリツク感が不良となつた。また
Ni層を用いないものでは、クリツク感が良好な
るも接触抵抗の劣化が著しいことが判る。
このように本発明によれば、Ni,Co又はその
合金からなる中間層を従来の常識に反して薄くす
ることにより、基体であるCu及びCu合金と被覆
層であるAg及びAg合金との組合せにおいて、特
異で有用な作用を発揮せしめ、その性能を大幅に
改善し得たものである。特に高温に耐えまた加工
性の改善も大きく、精密で多様な機能を要求され
る電子部品材料として好適で、経済的にも優れて
いる等、工業上顕著な効果を奏するものである。[Table] As is clear from Table 4, all of the materials of the present invention exhibit good contact resistance and click feeling, while Ni
In the comparison material with an excessive number of layers, no deterioration in contact resistance was observed because the heat treatment was performed at a relatively low temperature, but the springiness slightly changed and the click feeling became poor. Also
It can be seen that in the case where the Ni layer is not used, although the click feeling is good, the contact resistance is significantly deteriorated. As described above, according to the present invention, by making the intermediate layer made of Ni, Co or an alloy thereof thinner, contrary to conventional wisdom, a combination of Cu and Cu alloy as the base and Ag and Ag alloy as the coating layer can be achieved. It was able to exhibit a unique and useful action and significantly improve its performance. In particular, it can withstand high temperatures and greatly improves workability, making it suitable as a material for electronic parts that require precision and a variety of functions, and being economically superior, resulting in remarkable industrial effects.
Claims (1)
はAg合金を被覆した材料において、基体とAg又
はAg合金層間に厚さ0.01〜0.1μのNi,Co又はそ
の合金(但しNi−Zn合金を除く)からなる中間
層を設けたことを特徴とする銀被覆銅系電子部品
材料。 2 Ni,Co又はその合金(但しNi−Zn合金を除
く)からなる中間層の厚さを0.02〜0.08μとする
特許請求の範囲第1項記載の銀被覆銅系電子部品
材料。 3 Ag又はAg合金の被覆厚さを0.02〜2μとする
特許請求の範囲第1項又は第2項記載の銀被覆銅
系電子部品材料。 4 Cu系基体として表面がCu−Zn合金からなる
基体を用いる特許請求の範囲第1項、第2項又は
第3項記載の銀被覆銅系電子部品材料。[Claims] 1. In a material in which at least a part of the surface of a Cu-based substrate is coated with Ag or Ag alloy, there is a layer of Ni, Co or its alloy (Ni, Co or its alloy) with a thickness of 0.01 to 0.1μ between the substrate and the Ag or Ag alloy layer. A silver-coated copper-based electronic component material characterized by having an intermediate layer made of (excluding Ni-Zn alloy). 2. The silver-coated copper-based electronic component material according to claim 1, wherein the intermediate layer made of Ni, Co or an alloy thereof (excluding Ni-Zn alloy) has a thickness of 0.02 to 0.08μ. 3. The silver-coated copper-based electronic component material according to claim 1 or 2, wherein the coating thickness of Ag or Ag alloy is 0.02 to 2μ. 4. A silver-coated copper-based electronic component material according to claim 1, 2, or 3, in which the surface of the Cu-based substrate is made of a Cu-Zn alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3482483A JPS59160912A (en) | 1983-03-03 | 1983-03-03 | Silver coated copper electronic part material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3482483A JPS59160912A (en) | 1983-03-03 | 1983-03-03 | Silver coated copper electronic part material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59160912A JPS59160912A (en) | 1984-09-11 |
| JPH048883B2 true JPH048883B2 (en) | 1992-02-18 |
Family
ID=12424942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3482483A Granted JPS59160912A (en) | 1983-03-03 | 1983-03-03 | Silver coated copper electronic part material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59160912A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6460907A (en) * | 1987-09-01 | 1989-03-08 | Furukawa Electric Co Ltd | Conductor for extra-thin winding |
| JP2726434B2 (en) * | 1988-06-06 | 1998-03-11 | 古河電気工業株式会社 | Sn or Sn alloy coating material |
| JPH0221508A (en) * | 1988-07-08 | 1990-01-24 | Furukawa Electric Co Ltd:The | Conductor for minute wire winding |
| JP2670348B2 (en) * | 1989-05-15 | 1997-10-29 | 古河電気工業株式会社 | Sn or Sn alloy coating material |
| JP6053573B2 (en) * | 2013-02-28 | 2016-12-27 | 株式会社神戸製鋼所 | Manufacturing method of Ag plating electrode member |
| JP6553333B2 (en) * | 2014-06-05 | 2019-07-31 | Jx金属株式会社 | Metal material for electronic parts, connector terminal using the same, connector and electronic parts |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6422685A (en) * | 1987-07-17 | 1989-01-25 | Honda Motor Co Ltd | Helmet storage device in motorcycle |
-
1983
- 1983-03-03 JP JP3482483A patent/JPS59160912A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59160912A (en) | 1984-09-11 |
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