JPH0495829A - Infrared sensor apparatus - Google Patents
Infrared sensor apparatusInfo
- Publication number
- JPH0495829A JPH0495829A JP21416490A JP21416490A JPH0495829A JP H0495829 A JPH0495829 A JP H0495829A JP 21416490 A JP21416490 A JP 21416490A JP 21416490 A JP21416490 A JP 21416490A JP H0495829 A JPH0495829 A JP H0495829A
- Authority
- JP
- Japan
- Prior art keywords
- infrared sensor
- sensor
- photoconductive
- voltage
- constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 101100491857 Columba livia ASL gene Proteins 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は例えば赤外放射温度計に使用して好適な赤外線
センサ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an infrared sensor device suitable for use in, for example, an infrared radiation thermometer.
本発明は例えば赤外放射温度計に使用して好適な赤外線
センサ装置に関し、光導電型赤外線センサとこの光導電
型赤外線センサの抵抗値と略同じ抵抗値の抵抗器との直
列回路にバイアス直流電圧を供給する様になし、この光
導電型赤外線センサに被測定物よりの赤外線を入射させ
、この光導電型赤外線センサの抵抗値の変化による電圧
を検出する様にすることにより、この光導電型赤外線セ
ンサにより消費される電力が抵抗値の変化にかかわらず
一定となる様にし、この光導電型赤外線センサの感度が
一定となる様にしたものである。The present invention relates to an infrared sensor device suitable for use in, for example, an infrared radiation thermometer, in which a bias direct current is applied to a series circuit of a photoconductive infrared sensor and a resistor having approximately the same resistance value as that of the photoconductive infrared sensor. By supplying a voltage, infrared rays from the object to be measured enter the photoconductive infrared sensor, and detecting the voltage due to a change in the resistance of the photoconductive infrared sensor. The power consumed by the photoconductive infrared sensor is made constant regardless of changes in resistance, and the sensitivity of the photoconductive infrared sensor is kept constant.
一般に赤外放射温度計に使用される検出センサとして感
度が高く応答速度の速い例えは）ＩｇＣｄＴｅの如き光
導電型赤外線センサが用いられている。この光導電型赤
外線センサは赤外線が入射するとキャリアが励起され抵
抗値が変化（減少）するもので、従来この赤外線センサ
装置として第４図に示す如くこの光導電型赤外線センサ
（１）の一端を定電流回路（２）を介して電源端子（３
）に接続し、この光導電型赤外線センサ（１）の他端を
接地し、この光導電型赤外線センサ（１）及び定電流回
路（２）の接続点を増幅回路（４）を介して検出信号出
力端子（５）に接続し、この光導電型赤外線センサ（１
〕に定電流■のバイアス電流を供給しておき、この光導
電型赤外線センサ（１）の抵抗値Ｒ３の変化分ΔＲ５を
電圧値の変化△Ｒ−１として取り出していた。Generally, as a detection sensor used in an infrared radiation thermometer, a photoconductive infrared sensor such as IgCdTe, which has high sensitivity and quick response speed, is used. In this photoconductive type infrared sensor, when infrared rays are incident, the carriers are excited and the resistance value changes (decreases). Conventionally, this infrared sensor device has one end of this photoconductive type infrared sensor (1) as shown in Fig. 4. Power terminal (3) via constant current circuit (2)
), the other end of this photoconductive infrared sensor (1) is grounded, and the connection point between this photoconductive infrared sensor (1) and constant current circuit (2) is detected via the amplifier circuit (4). This photoconductive infrared sensor (1) is connected to the signal output terminal (5).
] was supplied with a constant bias current of {circle around (2)}, and the change ΔR5 in the resistance value R3 of the photoconductive infrared sensor (1) was taken out as the change in voltage value ΔR-1.
然しなから、斯る光導電型赤外線センサ（１）は冷却を
必要止し、例えば液体窒素で一１９６℃に冷却して使用
するものであり、この光導電型赤外線センサ（１）の感
度は温度に依存し、この光導電型赤外線センサ（１）は
その温度が異なると感度が異なり、良好な温度検出がで
きない不都合がある。However, such a photoconductive infrared sensor (1) does not require cooling, and is used after being cooled to -196°C with liquid nitrogen, for example, and the sensitivity of this photoconductive infrared sensor (1) is This photoconductive infrared sensor (1) has different sensitivity depending on the temperature, and has the disadvantage that it cannot detect temperature well.
斯る第４図に示す如き従来の赤外線センサ装置に於いて
は光導電型赤外線センサ（１）に定電流工をバイアス電
流として供給しているので、この光導電型赤外線センサ
（１）が赤外線の入射により抵抗値が変化ΔＲ，したと
きに、この光導電型赤外線センサ（１）で消費される電
力の変化ΔＰ＝１２△Ｒが比較的大きく例えば、このバ
イアス電流１が２×１Ｏ−３Ａ、光導電型赤外線センサ
（１）の抵抗値Ｒ５が４０Ω、この変化分△Ｒ５が−３
０であったときにこの消費される電力変化１分ΔＰは−
１，２Ｘ１０−５Ｗとなり、これによって光導電型赤外
線センサ（１）の温度が変化し、この光導電型赤外線セ
ンサ（１）の感度が変化する不都合がある。In the conventional infrared sensor device as shown in FIG. When the resistance value changes ΔR due to the incidence of , the resistance value R5 of the photoconductive infrared sensor (1) is 40Ω, and this change △R5 is -3
When the power consumption is 0, the change in power consumed per minute ΔP is -
1.2×10 −5 W, which causes the temperature of the photoconductive infrared sensor (1) to change, causing a disadvantage that the sensitivity of the photoconductive infrared sensor (1) changes.
本発明は斯る点に鑑み光導電型赤外線センサ（１）で消
費される電力を一定とし、この光導電型赤外線センサ（
１）の感度が常に一定となるようにすることを目的とす
る。In view of this, the present invention makes the power consumed by the photoconductive infrared sensor (1) constant, and the photoconductive infrared sensor (1)
The purpose is to ensure that the sensitivity of 1) remains constant.
本発明赤外線センサ装置は例えばｉ１図に示す如く光導
電型赤外線センサ（１）とこの光導電型赤外線センサ（
１）の抵抗値Ｒ３と路間じ抵抗値ＲＢ の抵抗器（６）
との直列回路にバイアス直流電圧Ｖ、を供給する様にな
し、この光導電型赤外線センサ（１）に被測定物よりの
赤外線を入射させ、この光導電型赤外線センサの抵抗値
の変化ΔＲ３による電圧を検出する様にしたものである
。The infrared sensor device of the present invention includes, for example, a photoconductive infrared sensor (1) and a photoconductive infrared sensor (1) as shown in Figure i1.
1) Resistor (6) with resistance value R3 and line resistance value RB
A bias DC voltage V is supplied to the series circuit with the photoconductive infrared sensor (1), and infrared rays from the object to be measured are incident on the photoconductive infrared sensor (1), and the change in resistance value of the photoconductive infrared sensor (ΔR3) It is designed to detect voltage.
本発明に依れば直列回路の抵抗器（６）の抵抗値Ｒｍと
光導電型赤外線センサ（１）の抵抗値Ｒｓ とを路間
−とじ、この直列回路に直流電圧ＶＢ をバイアス電圧
として供給しているので、この光導電型赤外線センサ（
１）が消費する電力は第２図に示す如く最大電力であり
、このとき光導電型赤外線センサ（１）の抵抗値Ｒ８が
多少変化しても電力の変化分ΔＰは略零であり、この光
導電型赤外線センサ（１）で消費される電力は略一定で
あり、この光導電型赤外線センサ（１）の温度を一定と
することができ、この光導電型赤外線センサ（１）の感
度は常に一定となる。According to the present invention, the resistance value Rm of the resistor (6) in the series circuit and the resistance value Rs of the photoconductive infrared sensor (1) are connected, and a DC voltage VB is supplied to this series circuit as a bias voltage. This photoconductive infrared sensor (
The power consumed by 1) is the maximum power as shown in Figure 2. At this time, even if the resistance value R8 of the photoconductive infrared sensor (1) changes slightly, the change in power ΔP is approximately zero; The power consumed by the photoconductive infrared sensor (1) is approximately constant, the temperature of this photoconductive infrared sensor (1) can be kept constant, and the sensitivity of this photoconductive infrared sensor (1) is Always constant.
以下第１ｆｆｌを参照しながら本発明赤外線センサ装置
の一実施例；巳つき説明しよう。この第１図に於いて第
４図に対応する部分には同一符号を付し、その詳細説明
は省略する。Hereinafter, one embodiment of the infrared sensor device of the present invention will be explained with reference to the first ffl. In FIG. 1, parts corresponding to those in FIG. 4 are designated by the same reference numerals, and detailed explanation thereof will be omitted.
この第１図に於いては例えばＨｇＣｄＴｅの如き光導電
型赤外線センサ（１）とこの光導電型赤外線センサ（１
）の抵抗値Ｒｓ と同じ抵抗値Ｒｍ の抵抗器（６）と
を直列接続し、この直列接続した直列回路の両端間に電
圧値Ｖｍ の電池（７）を接続し、この直列回路に電圧
値Ｖｔｔ のバイアス直流電圧を供給する。この場合抵
抗器（６）の抵抗値Ｒｍ と光導電型赤外線センサ（１
）の抵抗値Ｒ８とが等しいので、この光導電型赤外線セ
ンサ（１）で消費される電力は第２図に示す如く最大電
力となる。またこの場合光導電型赤外線センサ（１）は
従来と同様に所要の手段により液体窒素により冷却する
如くなされている。In FIG. 1, a photoconductive infrared sensor (1) such as HgCdTe and a photoconductive infrared sensor (1)
) and a resistor (6) with the same resistance value Rm are connected in series, a battery (7) with a voltage value Vm is connected between both ends of this series circuit, and a voltage value Vm is connected to this series circuit. Supply a bias DC voltage of Vtt. In this case, the resistance value Rm of the resistor (6) and the photoconductive infrared sensor (1
) are equal to the resistance value R8, the power consumed by this photoconductive infrared sensor (1) becomes the maximum power as shown in FIG. Further, in this case, the photoconductive infrared sensor (1) is cooled with liquid nitrogen by a necessary means as in the conventional case.
この抵抗器（６）及び光導電型赤外線センサ（１）の接
続点を増幅回路〔４）を介して検出信号出力端子（５）
に接続する。また図示しないが被測定物よりの赤外線が
この光導電型赤外線センサ（１月ご入射される如く構成
する。The connection point between this resistor (6) and the photoconductive infrared sensor (1) is connected to the detection signal output terminal (5) via the amplifier circuit [4].
Connect to. Although not shown, the photoconductive infrared sensor is constructed so that infrared rays from the object to be measured are incident on the photoconductive infrared sensor.
本例は上述の如く直列回路の抵抗器（６）の抵抗値Ｒ６
と光導電型赤外線センサ（１）の抵抗値Ｒ３とが等しく
、またこの直列回路に電圧Ｖ、のバイアス直流電圧が供
給されているので、この光導電型赤外線センサ（１）で
消費される電力は第２図に示す如く最大電力であり、こ
のとき光導電型赤外線センサ（１）の抵抗値Ｒｓ が多
少変化しても、電力の変化分△Ｐは略零であり、この光
導電型赤外線センサ〔１）で消費される電力は略一定で
あり、この光導電型赤外線センサ（１）の温度を一定と
することができる。因みにこの第１図例を第４図具体例
と同じ条件、即ち光導電型赤外線センサ（１）の抵抗値
Ｒ８を４０Ω、この変化分ΔＲ３を一３Ω、この光導電
型赤外線センサ（１）を流れる電流を２Ｘ１０−’Ａと
したとき、Ｒ９＝４０ΩのときＲ８は４０Ωであるので
ＶＢ＝０．１６ Ｖであり、このときの電力の変化分Δ
Ｐは＝２．４３ Ｘ１０−’Ｗ
であり、第４図従来例に比べ電力の変化分は１１５０に
低減した。従ってこれによりこの光導電型赤外線センサ
（１）の感度を常に一定にできる利益がある。In this example, as mentioned above, the resistance value R6 of the resistor (6) in the series circuit is
and the resistance value R3 of the photoconductive infrared sensor (1) are equal, and since a bias DC voltage of voltage V is supplied to this series circuit, the power consumed by the photoconductive infrared sensor (1) is is the maximum power as shown in FIG. The power consumed by the sensor [1] is approximately constant, and the temperature of this photoconductive infrared sensor (1) can be kept constant. Incidentally, this example in Figure 1 was set under the same conditions as the specific example in Figure 4, that is, the resistance value R8 of the photoconductive infrared sensor (1) was 40Ω, the change ΔR3 was -3Ω, and the photoconductive infrared sensor (1) was When the flowing current is 2X10-'A, when R9 = 40Ω, R8 is 40Ω, so VB = 0.16 V, and the change in power at this time is Δ
P is =2.43X10-'W, and the change in power is reduced to 1150 compared to the conventional example shown in FIG. Therefore, this has the advantage that the sensitivity of the photoconductive infrared sensor (1) can always be kept constant.
第３図は本発明の他の実施例を示す。この第３図につき
説明するに第１図に対応する部分は同一符号を付し詳細
説明は省略する。この第３図に於いては演算増幅回路（
８）の反転入力端子ｅを抵抗値Ｒ６と等しい抵抗値Ｒｍ
の抵抗器（６）及び抵抗値Ｒ３の光導電型赤外線セン
サ（１）の直列回路を介して接地すると共にこの演算増
幅回路（８）の非反転入力端子■を電圧ＶＢ の電池（
７）を介して接地し、この演算増幅器回路（８）の出力
端を抵抗器（９）を介してこの反転入力端子ｅに接続す
ると共にこの出力端より検出信号出力端子（５）を導出
する。FIG. 3 shows another embodiment of the invention. Referring to FIG. 3, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed explanation will be omitted. In this Figure 3, the operational amplifier circuit (
8) with a resistance value Rm equal to the resistance value R6.
It is grounded through a series circuit of a resistor (6) and a photoconductive infrared sensor (1) with a resistance value of R3, and the non-inverting input terminal (■) of this operational amplifier circuit (8) is connected to a battery (with a voltage of VB).
7), and the output terminal of this operational amplifier circuit (8) is connected to this inverting input terminal e via a resistor (9), and a detection signal output terminal (5) is derived from this output terminal. .
この第３図例に於いては抵抗器（９）により帰還が掛か
っているので、この演算増幅回路（８）の反転入力端子
ｅの電圧はこの非反転入力端子■の電圧ＶＢと同じであ
り、抵抗器（６）及び光導電型赤外線センサ（１）の直
列回路には第１図例同様に電圧Ｖ、のバイアス直流電圧
が供給されていると等価であり、また光導電型赤外線セ
ンサ（１）に被測定物よりの赤外線が入射されたときは
この反転入力端子ｅの電圧はこの光導電型赤外線センサ
（１）の抵抗値の変化分ΔＲ３に応じた電圧となり、検
出信号出力端子（５）にこの光導電型赤外線センサ（１
）の抵抗値の変化分ΔＲ８に応じた検出電圧を得ること
ができる。In the example in Fig. 3, feedback is applied by the resistor (9), so the voltage at the inverting input terminal e of this operational amplifier circuit (8) is the same as the voltage VB at the non-inverting input terminal ■. , the resistor (6), and the photoconductive infrared sensor (1) are equivalent to being supplied with a bias DC voltage of voltage V, as in the example in FIG. 1, and the photoconductive infrared sensor ( When infrared rays from the object to be measured are incident on 1), the voltage at this inverting input terminal e becomes a voltage corresponding to the change in resistance value ΔR3 of this photoconductive infrared sensor (1), and the detection signal output terminal ( 5) This photoconductive infrared sensor (1
) can obtain a detection voltage corresponding to the change in resistance value ΔR8.
従って斯る第３図例に於いても第１図例同様の作用効果
が得られることは容易に理解できよう。Therefore, it is easy to understand that the example shown in FIG. 3 can provide the same effects as the example shown in FIG.
尚本発明は上述実施例に限ることなく本発明の要旨を逸
脱することなくその他種々の構成が取り得ることは勿論
である。It goes without saying that the present invention is not limited to the above-described embodiments, and that various other configurations may be adopted without departing from the gist of the present invention.
は検出信号出力端子、（６）は抵抗器、（７）は電池で
ある。is a detection signal output terminal, (6) is a resistor, and (7) is a battery.
本発明に依れば光導電型赤外線センサ（１）で消費され
る電力をこの抵抗値の変化にかかわらず一定となるよう
にしたので、この光導電型赤外線センサ（１）の温度を
一定にでき、この光導電型赤外線センサ（１）の感度を
一定とすることができる利益がある。According to the present invention, the power consumed by the photoconductive infrared sensor (1) is made constant regardless of changes in this resistance value, so the temperature of the photoconductive infrared sensor (1) is kept constant. This has the advantage that the sensitivity of the photoconductive infrared sensor (1) can be made constant.
第１図は本発明赤外線センサ装置の一実施例を示す構成
図、第２図は本発明の説明に供する線図、第３図は本発
明の他の実施例を示す構成図、第４図は従来の赤外線セ
ンサ装置の例を示す構成図である。
（１）は光導電型赤外線センサ、（４）は増幅回路、（
５）代 理 人
松 隈 秀 盛
本発明界外龜セシサ装置のＡｌ’Ｊ
第１図
第２
図
本発明赤夕）４１ゼンサ荻置の化の君゛１第３図
従来の赤タド橿ゼシプ装置
第４図FIG. 1 is a block diagram showing one embodiment of the infrared sensor device of the present invention, FIG. 2 is a line diagram for explaining the present invention, FIG. 3 is a block diagram showing another embodiment of the present invention, and FIG. 1 is a configuration diagram showing an example of a conventional infrared sensor device. (1) is a photoconductive infrared sensor, (4) is an amplifier circuit, (
5) Agent Hidetoshi Hitamatsu Figure 4
Claims (1)
値と略同じ抵抗値の抵抗器との直列回路にバイアス直流
電圧を供給する様になし、 前記光導電型赤外線センサに被測定物よりの赤外線を入
射させ、前記光導電型赤外線センサの抵抗値の変化によ
る電圧を検出する様にしたことを特徴とする赤外線セン
サ装置。[Scope of Claims] A bias DC voltage is supplied to a series circuit of a photoconductive infrared sensor and a resistor having substantially the same resistance value as the resistance value of the photoconductive infrared sensor, and the photoconductive infrared sensor An infrared sensor device characterized in that infrared rays from an object to be measured are incident on the photoconductive infrared sensor to detect a voltage due to a change in resistance value of the photoconductive infrared sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21416490A JPH0495829A (en) | 1990-08-13 | 1990-08-13 | Infrared sensor apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21416490A JPH0495829A (en) | 1990-08-13 | 1990-08-13 | Infrared sensor apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0495829A true JPH0495829A (en) | 1992-03-27 |
Family
ID=16651297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21416490A Pending JPH0495829A (en) | 1990-08-13 | 1990-08-13 | Infrared sensor apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0495829A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10254798A (en) * | 1997-03-12 | 1998-09-25 | Mitsubishi Electric Corp | MMI communication device |
| US7630806B2 (en) | 1994-05-23 | 2009-12-08 | Automotive Technologies International, Inc. | System and method for detecting and protecting pedestrians |
| US7783403B2 (en) | 1994-05-23 | 2010-08-24 | Automotive Technologies International, Inc. | System and method for preventing vehicular accidents |
| US8041483B2 (en) | 1994-05-23 | 2011-10-18 | Automotive Technologies International, Inc. | Exterior airbag deployment techniques |
-
1990
- 1990-08-13 JP JP21416490A patent/JPH0495829A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7630806B2 (en) | 1994-05-23 | 2009-12-08 | Automotive Technologies International, Inc. | System and method for detecting and protecting pedestrians |
| US7783403B2 (en) | 1994-05-23 | 2010-08-24 | Automotive Technologies International, Inc. | System and method for preventing vehicular accidents |
| US8041483B2 (en) | 1994-05-23 | 2011-10-18 | Automotive Technologies International, Inc. | Exterior airbag deployment techniques |
| US8447474B2 (en) | 1994-05-23 | 2013-05-21 | American Vehicular Sciences Llc | Exterior airbag deployment techniques |
| JPH10254798A (en) * | 1997-03-12 | 1998-09-25 | Mitsubishi Electric Corp | MMI communication device |
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