JPH0513539B2 - - Google Patents

Info

Publication number
JPH0513539B2
JPH0513539B2 JP62064604A JP6460487A JPH0513539B2 JP H0513539 B2 JPH0513539 B2 JP H0513539B2 JP 62064604 A JP62064604 A JP 62064604A JP 6460487 A JP6460487 A JP 6460487A JP H0513539 B2 JPH0513539 B2 JP H0513539B2
Authority
JP
Japan
Prior art keywords
metal
tab
electrode
chip
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62064604A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63229725A (ja
Inventor
Masafumi Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62064604A priority Critical patent/JPS63229725A/ja
Publication of JPS63229725A publication Critical patent/JPS63229725A/ja
Publication of JPH0513539B2 publication Critical patent/JPH0513539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP62064604A 1987-03-18 1987-03-18 半導体装置 Granted JPS63229725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62064604A JPS63229725A (ja) 1987-03-18 1987-03-18 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62064604A JPS63229725A (ja) 1987-03-18 1987-03-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS63229725A JPS63229725A (ja) 1988-09-26
JPH0513539B2 true JPH0513539B2 (2) 1993-02-22

Family

ID=13263024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62064604A Granted JPS63229725A (ja) 1987-03-18 1987-03-18 半導体装置

Country Status (1)

Country Link
JP (1) JPS63229725A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263897A (ja) * 1990-03-14 1991-11-25 Fujitsu Ltd 混成集積回路の実装方法
JPH10308478A (ja) * 1997-03-05 1998-11-17 Toshiba Corp 半導体モジュール

Also Published As

Publication number Publication date
JPS63229725A (ja) 1988-09-26

Similar Documents

Publication Publication Date Title
US11881464B2 (en) Stacked RF circuit topology using transistor die with through silicon carbide vias on gate and/or drain
US12394733B2 (en) Stacked RF circuit topology
US5949140A (en) Microwave semiconductor device with via holes and associated structure
US3986196A (en) Through-substrate source contact for microwave FET
US20100253435A1 (en) Rf power amplifier circuit utilizing bondwires in impedance matching
US7741710B2 (en) Module with multiple power amplifiers and power sensors
JP2001237316A (ja) 無線通信装置
US11227819B2 (en) Cascode semiconductor device and method of manufacture
US5023677A (en) Low parasitic FET topology for power and low noise GaAs FETs
CN108987379B (zh) 具有集成谐波终止特征的半导体封装件
US4298846A (en) Semiconductor device
JP2025532102A (ja) ＰＣＢルーティングおよび表面実装式（ｓｕｒｆａｃｅ ｍｏｕｎｔｅｄ）トランジスタダイを有するトランジスタ増幅器
JP3674780B2 (ja) 高周波半導体装置
US5126827A (en) Semiconductor chip header having particular surface metallization
JPH0513539B2 (2)
JP3744828B2 (ja) 半導体装置
KR100679185B1 (ko) 반도체 장치
JPH10321762A (ja) 半導体装置
JPH05335487A (ja) 伝送回路素子
JPS6241433B2 (2)
JPH08330519A (ja) 化合物半導体集積回路装置
US20240194413A1 (en) Stacked integrated passive device
JPS5832270Y2 (ja) 電界効果型トランジスタ
JPH0436112Y2 (2)
US20020030260A1 (en) Electronic component and method of manufacture