JPH05135876A - Thin film electroluminescence element and its manufacture - Google Patents
Thin film electroluminescence element and its manufactureInfo
- Publication number
- JPH05135876A JPH05135876A JP3300407A JP30040791A JPH05135876A JP H05135876 A JPH05135876 A JP H05135876A JP 3300407 A JP3300407 A JP 3300407A JP 30040791 A JP30040791 A JP 30040791A JP H05135876 A JPH05135876 A JP H05135876A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- fluorine
- source
- film
- envelope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005401 electroluminescence Methods 0.000 title description 2
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 29
- 239000011737 fluorine Substances 0.000 claims abstract description 21
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 9
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 5
- 238000000034 method Methods 0.000 claims description 13
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 12
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 25
- 239000007789 gas Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、各種画像表示デバイス
に使用される薄膜電界発光素子及びその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescent device used in various image display devices and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】薄膜電界発光素子（以下、「薄膜ＥＬ
（エレクトロルミネセンスの略）素子」と称する。）
は、輝度が高く、特性劣化が少ないという利点を有す
る。このことから、ブラウン管（ＣＲＴ）に代わる新し
い画像表示デバイスとして、特にＯＡ端末用ディスプレ
イへの応用が期待されており、フルカラー表示用ＥＬ材
料の開発が望まれている。2. Description of the Related Art Thin film electroluminescent devices (hereinafter referred to as "thin film EL
(Abbreviation of electroluminescence) element ". )
Has the advantages of high brightness and little deterioration in characteristics. From this, as a new image display device replacing a cathode ray tube (CRT), application to a display for OA terminals is particularly expected, and development of an EL material for full color display is desired.
【０００３】通常、このようなＥＬ材料としては、Ｚｎ
Ｓ（硫化亜鉛），ＺｎＳｅ（セレニウム化亜鉛）等の２
族−６族間化合物からなる半導体材料又はＧａＡｓ（ガ
リウムヒ素），ＩｎＰ（インジウムリン）等の３族−５
族間化合物からなる半導体材料が広く用いられている。Usually, Zn is used as such an EL material.
2 such as S (zinc sulfide) and ZnSe (zinc selenide)
Group-5 semiconductor materials made of intergroup-6 compounds or Group-3-5 such as GaAs (gallium arsenide) and InP (indium phosphide)
Semiconductor materials made of intergroup compounds are widely used.
【０００４】ここでフルカラーを表示可能にするには、
光の３原色である赤（Ｒｅｄ），緑（Ｇｒｅｅｎ），青
（Ｂｌｕｅ）の３種類の単色光、いわゆるＲ，Ｇ，Ｂを
発光させる発光材料の実現が必要となる。また、Ｒ，
Ｇ，Ｂの３色を混合することにより白色が発光可能とな
る。Here, in order to display full color,
It is necessary to realize a light emitting material that emits three types of monochromatic light of three primary colors of light, red (Red), green (Green), and blue (Blue), so-called R, G, and B. Also, R,
White color can be emitted by mixing the three colors of G and B.
【０００５】緑色，黄色といった単色光を呈する薄膜Ｅ
Ｌ素子は、ＺｎＳにＭｎ，Ｃｕを不純物として添加する
ことにより実現されているが、完全に白色を呈するもの
は得られていない。また、最近複数の発光層によるマル
チカラーＥＬ素子が開発されているものの、青色発光層
の輝度や信頼性、さらには製造工程の複雑さなどの問題
から未だ実用化には至っていない。Thin film E that exhibits monochromatic light such as green and yellow
The L element is realized by adding Mn and Cu as impurities to ZnS, but an element that exhibits a completely white color has not been obtained. In addition, although a multi-color EL device having a plurality of light emitting layers has been recently developed, it has not been put to practical use due to the problems such as the brightness and reliability of the blue light emitting layer and the complexity of the manufacturing process.
【０００６】一方、非晶質炭化珪素（アモルファス炭化
珪素、以下、「ａ−ＳｉＣ：Ｈ」と称する。）を用いて
白色発光が得られることが発表（柊本他 第２９回応用
物理学会予稿集３ａ−Ｚ−８（昭和５７年春））されて
以来、ａ−ＳｉＣ：Ｈ薄膜の発光輝度の向上や信頼性の
改善が試みられている。On the other hand, it was announced that white luminescence can be obtained by using amorphous silicon carbide (amorphous silicon carbide, hereinafter referred to as "a-SiC: H") (Hiiragimoto et al. Since the collection of 3a-Z-8 (Spring 1982), attempts have been made to improve the emission brightness and reliability of a-SiC: H thin films.
【０００７】また、最近の非晶質炭素（アモルファスカ
ーボン、以下、「ａ−Ｃ：Ｈ」と称する。）でも同様の
白色又は青色発光が得られることが報告され（浜川他、
第５２回応用物理学会学術講演会予稿集１２ｐ−ＲＥ−
１（平成３年秋））、薄膜ＥＬ素子用発光材料として注
目されている。Further, it has been reported that similar white or blue light emission can be obtained even with recent amorphous carbon (amorphous carbon, hereinafter referred to as "aC: H") (Hamakawa et al.,
Proceedings of the 52nd Annual Meeting of the Society of Applied Physics 12p-RE-
1 (Autumn 1991)), and is attracting attention as a light emitting material for thin film EL devices.
【０００８】[0008]
【発明が解決しようとする課題】ところで非晶質半導体
の発光の起源は、構造に起因する局在準位からの電子の
励起が関与しているといわれているが、まだ明らかには
されていない。従って、発光特性を制御することが非常
に困難であり、現状では発光輝度の飛躍的な向上は期待
できない。The origin of light emission of an amorphous semiconductor is said to involve excitation of electrons from a localized level due to the structure, but it has not been clarified yet. Absent. Therefore, it is very difficult to control the light emission characteristics, and at present, a dramatic improvement in the light emission brightness cannot be expected.
【０００９】そこで、本発明は上記事情に鑑みてなされ
たものであり、高輝度で十分な発光効率が得られる薄膜
電界発光素子及びその製造方法を提供することを目的と
するものである。Therefore, the present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a thin film electroluminescent device capable of obtaining a sufficient luminous efficiency with high brightness and a method for manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明の薄膜電界発光素子は、フッ素が添加された
非晶質炭素薄膜を発光層として用い、前記薄膜中のフッ
素の濃度を、０．０１乃至３０ａｔｍ％の範囲に設定し
たことを特徴とするものである。In order to achieve the above object, the thin film electroluminescent device of the present invention uses an amorphous carbon thin film to which fluorine is added as a light emitting layer, and adjusts the concentration of fluorine in the thin film. , 0.01 to 30 atm%.
【００１１】また、本発明の薄膜電界発光素子の製造方
法は、炭化水素とフッ化炭素との混合ガス、又は炭化水
素とフッ素との混合ガスを主たる原料として用い、これ
らの混合ガスからグロー放電分解法により、フッ素が添
加された非晶質炭素薄膜の発光層を形成することを特徴
とするものである。Further, in the method for manufacturing a thin film electroluminescent device of the present invention, a mixed gas of hydrocarbon and fluorocarbon or a mixed gas of hydrocarbon and fluorine is used as a main raw material, and glow discharge is performed from these mixed gas. The light emitting layer of the amorphous carbon thin film to which fluorine is added is formed by a decomposition method.
【００１２】[0012]
【作用】本発明の薄膜電界発光素子によれば、発光層と
してフッ素が添加された非晶質炭素薄膜を用い、薄膜中
のフッ素の濃度を、０．０１乃至３０ａｔｍ％の範囲に
設定するようにしたので、非晶質炭素薄膜の発光層中の
フッ素は、発光中心として作用し、紫から赤までの全て
の可視領域に亘り、高輝度で十分な発光効率が得られ
る。According to the thin film electroluminescent device of the present invention, an amorphous carbon thin film to which fluorine is added is used as the light emitting layer, and the concentration of fluorine in the thin film is set to the range of 0.01 to 30 atm%. Therefore, the fluorine in the light emitting layer of the amorphous carbon thin film acts as an emission center, and high luminous intensity and sufficient light emitting efficiency can be obtained over the entire visible region from purple to red.
【００１３】また、本発明の薄膜電界発光素子の製造方
法によれば、炭化水素とフッ化炭素との混合ガス、又は
炭化水素とフッ素との混合ガスを主たる原料として用い
て、グロー放電分解法によりフッ素が添加された非晶質
炭素薄膜の発光層を形成する。これにより、非晶質炭素
薄膜の発光層中のフッ素は、発光中心として作用し、紫
から赤までの全ての可視領域に亘り、高輝度で十分な発
光効率が得られる。Further, according to the method for manufacturing a thin film electroluminescent device of the present invention, a glow discharge decomposition method is performed by using a mixed gas of hydrocarbon and fluorocarbon or a mixed gas of hydrocarbon and fluorine as a main raw material. Thus, a light emitting layer of an amorphous carbon thin film to which fluorine is added is formed. As a result, the fluorine in the light emitting layer of the amorphous carbon thin film acts as a light emitting center, and high luminous intensity and sufficient light emitting efficiency can be obtained over the entire visible region from purple to red.
【００１４】[0014]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１５】図１は本発明の薄膜ＥＬ素子の実施例を示
す断面図である。本薄膜ＥＬ素子は、ガラス基板１４の
上に順次、透明電極１５，第１の誘電体膜１６，発光層
として働きフッ素が添加された非晶質炭素（以下「ａ−
Ｃ：Ｈ，Ｆ」と称する）薄膜１７，第２の誘電体膜１８
及び電極１９を形成したものである。FIG. 1 is a sectional view showing an embodiment of the thin film EL element of the present invention. The thin film EL device of the present invention comprises a transparent electrode 15, a first dielectric film 16 and a fluorine-doped amorphous carbon (hereinafter referred to as "a-
C: H, F ") thin film 17, second dielectric film 18
And electrodes 19 are formed.
【００１６】前記透明電極１５は、例えばＩＴＯ（酸化
インジウム錫）からなり、ガラス基板１４上にスパッタ
リング法により０．２μｍの膜厚に形成されたものであ
る。なお、この透明電極１５は、ＳｎＯ2 ，ＺｎＯ等を
用いてもよい。The transparent electrode 15 is made of, for example, ITO (indium tin oxide) and is formed on the glass substrate 14 by a sputtering method to have a film thickness of 0.2 μm. The transparent electrode 15 may be made of SnO 2 , ZnO or the like.
【００１７】前記第１の誘電体膜１６は、例えばＹ2 Ｏ
3 （酸化イットリウム）からなり、透明電極１５上に電
子ビーム蒸着法により０．２μｍの膜厚に形成されたも
のである。なお、この第１の誘電体膜１６は、ＢａＴｉ
Ｏ3 ，ＰｂＴｉＯ3 ，Ａｌ2 Ｏ3 ，ＳｉＮ等を用いても
よい。The first dielectric film 16 is made of, for example, Y 2 O.
It is made of 3 (yttrium oxide) and is formed on the transparent electrode 15 by the electron beam evaporation method to have a film thickness of 0.2 μm. The first dielectric film 16 is made of BaTi.
O 3, PbTiO 3, Al 2 O 3, SiN or the like may be used.
【００１８】前記第２の誘電体膜１８は、例えばＹ2 Ｏ
3 からなり、ａ−Ｃ：Ｈ，Ｆ薄膜１７上に前記第１の誘
電体膜１６と同様に、電子ビーム蒸着法により０．２μ
ｍの膜厚に形成されたものである。なお、この第２の誘
電体膜１８は、第１の誘電体膜１６と同様に、ＢａＴｉ
Ｏ3 ，ＰｂＴｉＯ3 ，Ａｌ2 Ｏ3 ，ＳｉＮ等を用いても
よい。The second dielectric film 18 is formed of, for example, Y 2 O.
3 a, on the aC: H, F thin film 17 as in the case of the first dielectric film 16 by the electron beam evaporation method.
It is formed to a film thickness of m. The second dielectric film 18 is formed of BaTi similarly to the first dielectric film 16.
O 3, PbTiO 3, Al 2 O 3, SiN or the like may be used.
【００１９】前記ａ−Ｃ：Ｈ，Ｆ薄膜１７は、第１の誘
電体膜１６上に後述するグロー放電分解法により０．１
５μｍの膜厚に形成されたものである。このａ−Ｃ：
Ｈ，Ｆ薄膜１７を第１及び第２の誘電体膜１６，１８に
より挟んだ二重絶縁体構造としている。The aC: H, F thin film 17 is formed on the first dielectric film 16 by a glow discharge decomposition method which will be described later.
It is formed to a film thickness of 5 μm. This a-C:
It has a double insulator structure in which the H and F thin films 17 are sandwiched between the first and second dielectric films 16 and 18.
【００２０】前記電極１９は、例えばアルミニウムから
なり、第２の誘電体膜１８上に蒸着法により形成された
ものである。The electrode 19 is made of aluminum, for example, and is formed on the second dielectric film 18 by a vapor deposition method.
【００２１】次に、本実施例の薄膜ＥＬ素子の製造方法
を説明する。Next, a method of manufacturing the thin film EL element of this embodiment will be described.
【００２２】先ず、図３に示すような構成の薄膜形成装
置を用意する。この薄膜形成装置は、高周波電極１１及
び上部電極１２を備えた真空容器１と、排気系２と、第
１，第２及び第３のマスフローコントローラ３，５及び
７と、Ｈ2 源４と、Ｃ2 Ｈ2 （アセチレン）源６と、Ｃ
Ｆ4（フッ化炭素）源８と、高周波電源９と、マッチン
グ回路１０とを有している。First, a thin film forming apparatus having a structure as shown in FIG. 3 is prepared. This thin film forming apparatus includes a vacuum container 1 having a high frequency electrode 11 and an upper electrode 12, an exhaust system 2, first, second and third mass flow controllers 3, 5 and 7, an H 2 source 4, C 2 H 2 (acetylene) source 6, C
It has an F 4 (fluorocarbon) source 8, a high frequency power source 9 and a matching circuit 10.
【００２３】このような薄膜形成装置を用いて、先ず真
空容器１内の上部電極１２に図１の薄膜ＥＬ素子を製造
すべきガラス基板１４を載置する。この場合、ガラス基
板１４としては、透明電極１５及び第１の誘電体膜１６
を形成済みのものを用いるようにする。この状態で真空
容器１内を排気系２により１×１０-7Torrの高真空に排
気する。Using such a thin film forming apparatus, first, the glass substrate 14 on which the thin film EL element of FIG. 1 is to be manufactured is placed on the upper electrode 12 in the vacuum container 1. In this case, as the glass substrate 14, the transparent electrode 15 and the first dielectric film 16 are used.
To be used. In this state, the inside of the vacuum container 1 is evacuated to a high vacuum of 1 × 10 −7 Torr by the exhaust system 2.
【００２４】次に、第１のマスフローコントローラ３に
よりＨ2 源４から５０sccmの流量に調整されたＨ2 ガス
を真空容器１内に導入する。続いて、第２及び第３のマ
スフローコントローラ５及び７により各々Ｃ2 Ｈ2 源６
及びＣＦ4 源８から、１．５sccm及び３．５sccmの流量
に調整されたＣ2 Ｈ2 及びＣＦ4 を導入する。各流量が
安定しかつ真空容器１内のガス圧が安定した後、排気系
２の排気速度を調整して真空容器１内の圧力を０．１To
rrに保持する。Next, H 2 gas adjusted to a flow rate of 50 sccm from the H 2 source 4 by the first mass flow controller 3 is introduced into the vacuum container 1. Subsequently, the C 2 H 2 source 6 is respectively supplied by the second and third mass flow controllers 5 and 7.
And CF 4 source 8 introduce C 2 H 2 and CF 4 adjusted to flow rates of 1.5 sccm and 3.5 sccm. After each flow rate is stabilized and the gas pressure in the vacuum container 1 is stabilized, the exhaust speed of the exhaust system 2 is adjusted to adjust the pressure in the vacuum container 1 to 0.1 To.
Hold in rr.
【００２５】続いて、高周波電源９（周波数１３．５６
ＭＨｚ）からマッチング回路１０を介して、真空容器１
内の高周波電極１１に５０Ｗの高周波電力を供給する
と、高周波電極１１と上部電極１２との間でグロー放電
プラズマが発生する。なお、上部電極１２の高周波電極
１１と対向する面に載置されたガラス基板１４は、上部
電極１２内に設けられた加熱機構により１００℃に加熱
されている。この状態で上記反応ガスのグロー放電を７
０分間行うことにより、分解したａ−Ｃ：Ｈ，Ｆ薄膜１
７が０．１５μｍの膜厚で第１の誘電体膜１６上に堆積
する。Subsequently, the high frequency power source 9 (frequency 13.56)
MHz) via the matching circuit 10 to the vacuum container 1
When high-frequency power of 50 W is supplied to the high-frequency electrode 11 therein, glow discharge plasma is generated between the high-frequency electrode 11 and the upper electrode 12. The glass substrate 14 placed on the surface of the upper electrode 12 facing the high frequency electrode 11 is heated to 100 ° C. by a heating mechanism provided in the upper electrode 12. In this state, the glow discharge of the above reaction gas
Decomposed aC: H, F thin film 1 by performing for 0 minutes
7 is deposited on the first dielectric film 16 with a film thickness of 0.15 μm.
【００２６】続いて、周知の電子ビーム蒸着法により第
２の誘電体膜１８及び電極１９を形成することにより、
図１の構造の薄膜ＥＬ素子が得られる。Subsequently, the second dielectric film 18 and the electrode 19 are formed by the well-known electron beam evaporation method,
A thin film EL device having the structure of FIG. 1 is obtained.
【００２７】このとき得られたａ−Ｃ：Ｈ，Ｆ薄膜１７
には、約３ａｔｍ％のフッ素が含まれており、このフッ
素が発光中心として作用するので、フッ素を含まないａ
−Ｃ：Ｈ薄膜を発光層に用いたＥＬ素子の１０倍以上の
発光輝度を有する薄膜ＥＬ素子が得られた。なお、本発
明者らにより、ａ−Ｃ：Ｈ，Ｆ薄膜１７中のフッ素濃度
を０．０１乃至３０ａｔｍ％、望ましくは０．１乃至５
ａｔｍ％の範囲にしたときに、高い輝度が得られること
が確認されている。The aC: H, F thin film 17 obtained at this time
Contains about 3 atm% of fluorine, and since this fluorine acts as a luminescent center, it contains no fluorine.
A thin film EL device having an emission luminance 10 times or more that of an EL device using a -C: H thin film as a light emitting layer was obtained. According to the inventors, the fluorine concentration in the aC: H, F thin film 17 is 0.01 to 30 atm%, preferably 0.1 to 5 atm.
It has been confirmed that high brightness is obtained when the range is atm%.
【００２８】図２は３ａｔｍ％のフッ素を含むａ−Ｃ：
Ｈ薄膜をレーザ光（ヘリウムカドミウム（Ｈｅ−Ｃｄ）
レーザ，波長３２５ｎｍ）で励起した場合のＰＬ（フォ
トルミネッセンス）スペクトルを示すものである。FIG. 2 shows aC containing 3 atm% of fluorine:
Laser light (helium cadmium (He-Cd)) on the H thin film
It shows a PL (photoluminescence) spectrum when excited by a laser having a wavelength of 325 nm.
【００２９】このような本実施例によれば、図２に示す
ように、本実施例によるＰＬ強度（Ａ）は、従来のａ−
Ｃ：Ｈ薄膜のＰＬ強度（Ｂ）に比較して、約２０倍大き
くとることができる。また、特に青色領域（波長５００
ｎｍ以下）の発光強度が飛躍的に改善されているため、
理想的な白色発光を得ることができる。なお、レーザ光
に代えて交流電界で励起しても同様な効果を得ることが
できる。According to the present embodiment as described above, as shown in FIG. 2, the PL intensity (A) according to the present embodiment is a-
It can be about 20 times larger than the PL intensity (B) of the C: H thin film. Also, especially in the blue region (wavelength 500
Since the emission intensity of (nm or less) is dramatically improved,
It is possible to obtain ideal white light emission. It should be noted that similar effects can be obtained by exciting with an AC electric field instead of laser light.
【００３０】また、本実施例の発光開始電圧は、従来例
より約５０Ｖ低い約１００Ｖとなり、発光効率が向上し
かつ、図２に示したような発光スペクトルが得られ、可
視光領域全体にスペクトルが広がっていることにより明
るい白色を呈する。また、輝度は５００ｆＬ（フートラ
ンバート）とディスプレイに充分応用可能な値が得ら
る。Further, the light emission starting voltage of this embodiment is about 100 V, which is about 50 V lower than that of the conventional example, the light emission efficiency is improved, and the light emission spectrum as shown in FIG. 2 is obtained. Has a bright white color. In addition, the brightness is 500 fL (foot transversal), which is a value sufficiently applicable to a display.
【００３１】なお、本発明は、上記実施例に限定され
ず、その要旨を変更しない範囲内で種々に変形実施でき
る。例えば、なお、Ｃ2 Ｈ2 とＣＦ4 の混合ガスを用い
てグロー放電を行う場合について説明したが、炭化水素
とフッ素化物との混合ガスを用いて反応させるならば、
これに限らずＣ2 Ｈ2 とＦ2 の混合ガスを用いても同様
な結果を得ることができる。The present invention is not limited to the above-described embodiments, but can be variously modified and implemented within the scope of the invention. For example, the case of performing glow discharge using a mixed gas of C 2 H 2 and CF 4 has been described, but if the reaction is performed using a mixed gas of hydrocarbon and fluorinated compound,
Not limited to this, the same result can be obtained by using a mixed gas of C 2 H 2 and F 2 .
【００３２】[0032]
【発明の効果】以上述べたように本発明によれば、発光
中心不純物としてフッ素を添加した非晶質炭素薄膜を発
光層として用いる薄膜電界発光素子及びその製造方法を
提供するにようしたので、高輝度で十分な発光効率を得
ることができる。As described above, according to the present invention, there is provided a thin film electroluminescent device using an amorphous carbon thin film to which fluorine is added as an emission center impurity as a light emitting layer, and a method for manufacturing the same. High luminance and sufficient luminous efficiency can be obtained.
【図１】本発明の薄膜ＥＬ素子の実施例を示す断面図で
ある。FIG. 1 is a cross-sectional view showing an example of a thin film EL element of the present invention.
【図２】本実施例素子の発光層と従来素子の発光層との
フォトルミネッセンススペクトルを比較する特性図であ
る。FIG. 2 is a characteristic diagram comparing photoluminescence spectra of the light emitting layer of the device of this example and the light emitting layer of the conventional device.
【図３】本実施例素子の構造に用いる薄膜形成装置の構
造を示すブロック図である。FIG. 3 is a block diagram showing the structure of a thin film forming apparatus used for the structure of the device of this example.
１５ 透明電極 １６ 第１の誘電体膜 １７ フッ素が添加された非晶質炭素薄膜 １８ 第２の誘電体膜 15 Transparent Electrode 16 First Dielectric Film 17 Fluorine-Added Amorphous Carbon Thin Film 18 Second Dielectric Film
Claims (2)
光層として用い、前記薄膜中のフッ素の濃度を、０．０
１乃至３０ａｔｍ％の範囲に設定したことを特徴とする
薄膜電界発光素子。1. An amorphous carbon thin film to which fluorine is added is used as a light emitting layer, and the concentration of fluorine in the thin film is 0.0
A thin film electroluminescent device characterized by being set in a range of 1 to 30 atm%.
は炭化水素とフッ素との混合ガスを主たる原料として用
い、これらの混合ガスからグロー放電分解法により、フ
ッ素が添加された非晶質炭素薄膜の発光層を形成するこ
とを特徴とする薄膜電界発光素子の製造方法。2. An amorphous material to which fluorine is added from a mixed gas of hydrocarbon and fluorocarbon or a mixed gas of hydrocarbon and fluorine as a main raw material by a glow discharge decomposition method. A method of manufacturing a thin film electroluminescent device, which comprises forming a light emitting layer of a carbon thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3300407A JPH05135876A (en) | 1991-11-15 | 1991-11-15 | Thin film electroluminescence element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3300407A JPH05135876A (en) | 1991-11-15 | 1991-11-15 | Thin film electroluminescence element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05135876A true JPH05135876A (en) | 1993-06-01 |
Family
ID=17884426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3300407A Withdrawn JPH05135876A (en) | 1991-11-15 | 1991-11-15 | Thin film electroluminescence element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05135876A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5563105A (en) * | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
-
1991
- 1991-11-15 JP JP3300407A patent/JPH05135876A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5563105A (en) * | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
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