JPH0514452Y2 - - Google Patents
Info
- Publication number
- JPH0514452Y2 JPH0514452Y2 JP215387U JP215387U JPH0514452Y2 JP H0514452 Y2 JPH0514452 Y2 JP H0514452Y2 JP 215387 U JP215387 U JP 215387U JP 215387 U JP215387 U JP 215387U JP H0514452 Y2 JPH0514452 Y2 JP H0514452Y2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- electrode
- accelerating
- voltage
- orifice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 39
- 238000000605 extraction Methods 0.000 claims description 22
- 230000001133 acceleration Effects 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
【考案の詳細な説明】
［産業上の利用分野］
本考案は集束イオンビーム装置等に使用して効
果のあるガスフエーズのイオン源に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a gas phase ion source that is effective when used in focused ion beam devices and the like.
［従来技術］
ガスフエーズイオン源は電界イオン顕微鏡の原
理を用いたイオン源で、集束イオンビーム装置の
イオン源としては非常に良い性能を有している。
このイオン源の概略を第４図に示してある。図
中、１は気密容器で、内部は図示しないが、所定
の真空ポンプで高真空に排気可能である。この気
密容器内に先端径がnmオーダに加工された、例
えばタングステンやイリジウム等で形成されたエ
ミツタ２、第１の引出し電極３、第２の引出し電
極４及びアース電位の加速電極５が配置されてお
り、各電極には電源６，７，８から所定の直流高
電圧が印加されている。前記気密容器内にはパイ
プ９を介してガス源（図示せず）からイオン化す
べきガスが導入され、容器内を10-2〜10-3Torr
程度の圧力に保持することにより、エミツタ２の
先端付近に該ガスが連続的に供給可能である。こ
れにより、エミツタ先端に高電界が集中し、その
近傍へガス分子が近ずくとその電界によりイオン
化が起る。この生成されたイオンは加速電極とエ
ミツタ間の加速電界により例えば100Kevに加速
されて下方に取出される。[Prior Art] A gas phase ion source is an ion source that uses the principle of a field ion microscope, and has very good performance as an ion source for a focused ion beam device.
A schematic diagram of this ion source is shown in FIG. In the figure, 1 is an airtight container, and although the inside is not shown, it can be evacuated to a high vacuum using a predetermined vacuum pump. In this airtight container, an emitter 2 made of, for example, tungsten or iridium, whose tip diameter is processed to be on the order of nanometers, a first extraction electrode 3, a second extraction electrode 4, and an acceleration electrode 5 of earth potential are arranged. A predetermined DC high voltage is applied to each electrode from power supplies 6, 7, and 8. A gas to be ionized is introduced into the airtight container from a gas source (not shown) through a pipe 9, and the inside of the container is heated to 10 -2 to 10 -3 Torr.
By maintaining the pressure at a certain level, the gas can be continuously supplied to the vicinity of the tip of the emitter 2. As a result, a high electric field is concentrated at the tip of the emitter, and when gas molecules approach the vicinity, ionization occurs due to the electric field. The generated ions are accelerated to, for example, 100 Kev by an accelerating electric field between the accelerating electrode and the emitter, and are extracted downward.
このようなイオン源を使用した場合、直径
0.01μm程度の微小なイオンプローブが得られ、
次世代の超LSI生産用の露光技術として大いに注
目されている。 When using such an ion source, the diameter
A minute ion probe of about 0.01μm can be obtained,
It is attracting a lot of attention as an exposure technology for next-generation VLSI production.
［考案が解決しようとする問題点］
ところが、このようなイオン源においては、エ
ミツシヨンに方向性があり、エミツタにより異な
つたエミツシヨンパターンを形成する。従つて、
高輝度のイオン源を得るには、このパターンをモ
ニタし、所望のパターン（輝点）を取出すように
しなければならない。この目的のために加速電極
の下方に微小開口を有したオリフイスと、この上
でイオンを走査する偏向系と前記オリフイスの下
方にイオン検出器とを設け、この検出器からの信
号を前記イオンの走査に同期した表示又は記録装
置に導入してモニタする方法が提案されている。
しかし、一般の集束イオンビーム装置では加速電
極が100KV又はそれ以上であるため、第１に高
エネルギーのイオンをオリフイスの上で面走査し
なければならないので、偏向系へ非常に高い偏向
電圧を印加しなければならず、装置の構成上及び
操作上大変に厄介であり、第２にイオン加速場の
レンズ作用によりエミツシヨンパターンが縮小さ
れるため、パターン分解能が低下し所定のパター
ンの選択精度が悪くなると言う欠点がある。[Problems to be solved by the invention] However, in such an ion source, the emission has directionality, and different emission patterns are formed depending on the emitter. Therefore,
To obtain a high-brightness ion source, this pattern must be monitored and a desired pattern (bright spot) must be extracted. For this purpose, an orifice with a minute opening is provided below the accelerating electrode, a deflection system for scanning ions on the orifice, and an ion detector below the orifice, and the signal from this detector is used to detect the ions. A method has been proposed in which a display or recording device synchronized with scanning is installed and monitored.
However, in general focused ion beam devices, the accelerating electrode is 100KV or higher, so firstly, high-energy ions must be scanned over the orifice, so a very high deflection voltage is applied to the deflection system. This is extremely troublesome in terms of device configuration and operation.Secondly, the emission pattern is reduced by the lens action of the ion acceleration field, resulting in a decrease in pattern resolution and difficulty in selecting a given pattern. There is a drawback that it makes things worse.
そこで、本考案の目的はエミツシヨンパターン
のモニタを高分解能で且つ容易に行なえ、もつて
所望のパターンの選択を容易に行なえるようにす
る集束イオンビーム装置等用イオン源を提供する
ことにある。 Therefore, the purpose of the present invention is to provide an ion source for a focused ion beam device, etc., which allows emission patterns to be easily monitored with high resolution, thereby making it easy to select a desired pattern. be.
［問題を解決するための手段］
本考案は先端部が尖鋭に加工されたエミツタ、
このエミツタに対向して配置された少なくとも１
段の引出し電極、イオンを加速するための加速電
極、前記エミツタ先端付近にイオン化すべきガス
分子を供給する手段、前記加速電極の下方に配置
された微小開口を有するオリフイス、該加速電極
と該オリフイスとの間に配置され走査源に接続さ
れた少なくとも１段の偏向系、及び、前記オリフ
イスの下方にイオン通路に対し挿脱可能に配置さ
れたイオン検出器を備え、第１の切換えにより前
記エミツタと引出し電極の間及びエミツタと加速
電極の間に夫々異なつた所定の直流電圧が印加さ
れ、第２の切換えにより前記エミツタと引出し電
極の間及びエミツタと加速電極の間に夫々、第１
の切換えで前記エミツタと引出し電極との間に印
加された直流電圧以下の同一の直流電圧が印加さ
れる様に成した集束イオンビーム装置等用イオン
源に特徴がある。[Means for solving the problem] The present invention uses an emitter with a sharp tip,
At least one emitter placed opposite the emitter
an extraction electrode for a stage, an accelerating electrode for accelerating ions, a means for supplying gas molecules to be ionized near the tip of the emitter, an orifice having a minute opening disposed below the accelerating electrode, and the accelerating electrode and the orifice. and an ion detector disposed below the orifice so that it can be inserted into and removed from the ion path, and the emitter Different predetermined DC voltages are applied between the emitter and the extractor electrode and between the emitter and the accelerating electrode, respectively, and by the second switching, the first DC voltage is applied between the emitter and the extractor electrode and between the emitter and the accelerating electrode, respectively.
An ion source for a focused ion beam device or the like is characterized in that the same DC voltage lower than the DC voltage applied between the emitter and the extraction electrode is applied by switching.
［実施例］
第１図は本考案の一実施例を示す概略図で、第
４図と同符号は同一の部材を示している。又、１
０は微小開口を有するオリフイスであり、加速電
極５の下方に置かれている。このオリフイスと前
記加速電極の間には２段の偏向電極１１ａ，１１
ｂが設置されており、各電極には操作電源１２か
ら所定の走査電圧、又は直流電圧が印加可能であ
る。またオリフイスの下方にはイオンの検出器１
３がイオンの通路に対して挿脱可能に置かれてお
り、イオンエミツシヨンのモニタの時イオン通路
上に配置できる構造になつている。前記走査電源
の信号は表示又は記録装置１４の横軸信号として
供給され、又検出器の信号はアンプ１５を介して
該表示装置の縦軸信号として供給される。第１の
引出電極３と加速電極５の間にはスイツチS1が介
挿され、そのｂ端子はそのまま第１引出電極３に
接続されるのに対し、ａ端子は非接続の状態にし
てある。第２の引出し電極の電源７にはスイツチ
S2が接続され、ｂ端子は非接続の状態にしてあ
る。更に、加速電極８にもスイツチS3が接続さ
れ、そのｂ端子も非接続の状態である。各スイツ
チS1〜S3は連動的に操作されるようになつてお
り、第１のモードはａ端子が接続し、第２のモー
ドはｂ端子が接続した場合である。第１のモード
は各電源が所定の電極に正規に接続した場合であ
り、第２図に示すように集束イオンビーム装置と
して使用する場合で、加速電圧は100KV又はそ
れ以上である。この場合、第１引出し電極３と第
２引出し電極４の間及び第２引出し電極４と加速
電極５の間には高電界が形成され、その部分に集
束レンズ場が生ずる。このため、エミツタ２から
発生したイオンは加速されながら集束され、図示
のようにオリフイス１０上ではエミツシヨンパタ
ーンがかなり縮小された状態で投影される。第２
のモードはエミツシヨンパターンをモニタする場
合で、前記加速電圧を集束イオンビーム装置とし
て使用する場合に比較して著しく低くするように
している。即ち、第３図に示すように各スイツチ
をｂ端子に接続した場合には、第１の引出し電源
６がエミツタ２と、大地に繋がつた第１の引出し
電極３、第２の引出し電極４及び加速電極５との
間に接続されるようになり、結局、加速電圧は第
１の引出し電圧（10KV程度）に切換えられたこ
とになる。この切換えられた電圧は第１の引出し
電圧に同等かそれより低い電圧が好ましい。該電
圧は加速電源８の電圧（100KV又はそれ以上）
に比べ著しく低く、その為、第２のモードにおい
てはエミツタ２から発生したイオンのエネルギー
は低く、且つ、第１の引出し電極３、第２の引出
し電極４及び加速電極５は同電位なので、これら
の各電極間にはレンズ場が生じないので、第３図
から分るようにイオンは発散してオリフイス１０
上に投射する。そこで、偏向電極１１ａ，１１ｂ
に走査電源１２から面走査用の信号を送ると、比
較的低い電圧で広がつたエミツシヨンパターンを
オリフイス１０の上で走査することができる。オ
リフイスを通過したイオンは検出器１３により検
出され、走査と同期した表示装置又は記録装置１
４に送られ、エミツシヨンパターンを表示する。
この全パターンをモニタしながら偏向電極１１
ａ，１１ｂに印加する直流電圧を調整すると所望
とするパターンを光源として選定できる。この選
定が終了した後、各スイツチをａ端子に戻し、集
束イオンビーム装置として使用するわけである
が、この場合加速電圧がモニタの場合と相違する
の、偏向電極に印加する直流電圧がそのままでは
選定した輝点がオリフイスの微小開口からずれて
しまう。そこで、加速電圧比が分つているので、
この切換に関連して前記偏向電極１１ａ，１１ｂ
に印加する電圧を実験的に求めた電圧に切換るよ
うにすると選定したパターン（輝点）からのイオ
ンがオリフイス１０の下方に取出される。[Embodiment] FIG. 1 is a schematic diagram showing an embodiment of the present invention, and the same reference numerals as in FIG. 4 indicate the same members. Also, 1
0 is an orifice having a minute opening, and is placed below the accelerating electrode 5. Two stages of deflection electrodes 11a and 11 are provided between this orifice and the acceleration electrode.
b is installed, and a predetermined scanning voltage or DC voltage can be applied to each electrode from the operating power source 12. Also, below the orifice is an ion detector 1.
3 is placed so as to be removably inserted into the ion passage, and has a structure that allows it to be placed on the ion passage when monitoring ion emission. The scanning power signal is supplied as a horizontal axis signal to the display or recording device 14, and the detector signal is supplied via an amplifier 15 as a vertical axis signal to the display device. A switch S1 is inserted between the first extraction electrode 3 and the acceleration electrode 5, and its b terminal is directly connected to the first extraction electrode 3, while the a terminal is left unconnected. . A switch is connected to the power supply 7 of the second extraction electrode.
S2 is connected, and the b terminal is left unconnected. Furthermore, a switch S3 is also connected to the accelerating electrode 8, and its b terminal is also in an unconnected state. The switches S 1 to S 3 are operated in conjunction with each other, and the first mode is when the a terminal is connected, and the second mode is when the b terminal is connected. The first mode is when each power source is normally connected to a predetermined electrode, and is used as a focused ion beam device as shown in FIG. 2, and the accelerating voltage is 100 KV or more. In this case, a high electric field is formed between the first extraction electrode 3 and the second extraction electrode 4 and between the second extraction electrode 4 and the accelerating electrode 5, and a focusing lens field is generated in that portion. Therefore, the ions generated from the emitter 2 are accelerated and focused, and the emission pattern is projected onto the orifice 10 in a considerably reduced size as shown in the figure. Second
In this mode, the emission pattern is monitored, and the acceleration voltage is set to be significantly lower than that when the device is used as a focused ion beam device. That is, when each switch is connected to the b terminal as shown in FIG. The accelerating voltage is now connected to the accelerating electrode 5, and the accelerating voltage is eventually switched to the first extraction voltage (approximately 10 KV). This switched voltage is preferably equal to or lower than the first extraction voltage. The voltage is the voltage of acceleration power supply 8 (100KV or more)
Therefore, in the second mode, the energy of the ions generated from the emitter 2 is low, and since the first extraction electrode 3, second extraction electrode 4, and acceleration electrode 5 are at the same potential, these Since no lens field is generated between the electrodes, the ions diverge and reach the orifice 10, as seen in
project upwards. Therefore, the deflection electrodes 11a, 11b
When a surface scanning signal is sent from the scanning power supply 12 to the scanning power supply 12, the spread emission pattern can be scanned over the orifice 10 with a relatively low voltage. Ions that have passed through the orifice are detected by a detector 13, and a display or recording device 1 synchronized with scanning.
4 and displays the emission pattern.
While monitoring this entire pattern, the deflection electrode 11
By adjusting the DC voltage applied to a and 11b, a desired pattern can be selected as a light source. After this selection is completed, each switch is returned to the a terminal and used as a focused ion beam device, but in this case the accelerating voltage is different from that of the monitor, because the DC voltage applied to the deflection electrode is The selected bright spot is shifted from the minute opening of the orifice. Therefore, since the acceleration voltage ratio is known,
In connection with this switching, the deflection electrodes 11a, 11b
When the applied voltage is switched to an experimentally determined voltage, ions from the selected pattern (bright spot) are taken out below the orifice 10.
尚、上記は一例であり実際には色々な偏向が可
能である。例えば、引出し電極は２段使用した
が、１段の場合でも良い。又、偏向電極も２段使
用したが１段であつても良い。更に、各電源は実
用的には可変にすることが好ましい。更に又、第
２のモード、つまりエミツシヨンパターンモニタ
のモードにするとき、加速電圧を引出し電源によ
り与えたが、これとは別に電源を設けても良い。 Note that the above is an example, and various deflections are actually possible. For example, although two stages of extraction electrodes are used, one stage may be used. Further, although two stages of deflection electrodes are used, it may be one stage. Furthermore, it is preferable for each power source to be variable for practical purposes. Furthermore, when entering the second mode, that is, the emission pattern monitor mode, the accelerating voltage is applied by the extraction power source, but a power source may be provided separately from this.
［効果］
以上詳説したように、本考案ではガスフエーズ
イオン源においてエミツシヨンパターンをモニタ
するときは加速電圧を引出し電圧と同程度又はそ
れより低い電圧に切換るように構成してあるの
で、パターンモニタ時に使用する偏向電極への走
査電圧が低くて良く、回路構成上及び操作上極め
て有利であり、又各電極間に静電レンズ場が生じ
ないので、パターンの集束がなくなり、パターン
観察の位置分解能が高くなるという効果を有し、
所定パターン（輝点）の選択が極めて容易にな
る。[Effect] As explained in detail above, the present invention is configured so that when monitoring the emission pattern in a gas phase ion source, the accelerating voltage is switched to a voltage comparable to or lower than the extraction voltage. , the scanning voltage to the deflection electrodes used during pattern monitoring can be low, which is extremely advantageous in terms of circuit configuration and operation.Also, since no electrostatic lens field is generated between each electrode, the pattern is no longer focused, making it easier to observe the pattern. It has the effect of increasing the positional resolution of
Selection of a predetermined pattern (bright spot) becomes extremely easy.
第１図は本考案の一実施例を示す構成略図、第
２図及び第３図は本考案の作動を示す図、第４図
は従来のガスフエーズイオン源の概略を示す図で
ある。
１……気密容器、２……エミツタ、３，４……
引出し電極、５……加速電極、６，７，８……直
流電源、９……パイプ、１０……オリフイス、１
１ａ，１１ｂ……偏向電極、１２……走査電源、
１３……イオン検出器、１４……表示又は記録装
置。
FIG. 1 is a schematic diagram showing an embodiment of the present invention, FIGS. 2 and 3 are diagrams showing the operation of the present invention, and FIG. 4 is a diagram schematically showing a conventional gas phase ion source. 1... Airtight container, 2... Emitsuta, 3, 4...
Extraction electrode, 5... Accelerating electrode, 6, 7, 8... DC power supply, 9... Pipe, 10... Orifice, 1
1a, 11b...deflection electrode, 12...scanning power supply,
13...Ion detector, 14...Display or recording device.
Claims (1)
ツタに対向して配置された少なくとも１段の引出
し電極、イオンを加速するための加速電極、前記
エミツタ先端付近にイオン化すべきガス分子を供
給する手段、前記加速電極の下方に配置された微
小開口を有するオリフイス、該加速電極と該オリ
フイスとの間に配置され走査源に接続された少な
くとも１段の偏向系、及び、前記オリフイスの下
方にイオン通路に対し挿脱可能に配置されたイオ
ン検出器を備え、第１の切換えにより前記エミツ
タと引出し電極の間及びエミツタと加速電極の間
に夫々異なつた所定の直流電圧が印加され、第２
の切換えにより前記エミツタと引出し電極の間及
びエミツタと加速電極の間に夫々、第１の切換え
で前記エミツタと引出し電極との間に印加された
直流電圧以下の同一の直流電圧が印加される様に
成した集束イオンビーム装置等用イオン源。 an emitter with a sharp tip; at least one extraction electrode disposed opposite the emitter; an accelerating electrode for accelerating ions; means for supplying gas molecules to be ionized near the tip of the emitter; an orifice with a micro-aperture disposed below the accelerating electrode; at least one stage deflection system disposed between the accelerating electrode and the orifice and connected to a scanning source; and an ion path disposed below the orifice. The ion detector is provided with an ion detector that is removably inserted into the ion detector, and the first switching applies different predetermined DC voltages between the emitter and the extraction electrode and between the emitter and the accelerating electrode, and the second
By switching, the same DC voltage that is lower than the DC voltage applied between the emitter and the extraction electrode in the first switching is applied between the emitter and the extraction electrode and between the emitter and the acceleration electrode, respectively. An ion source for focused ion beam devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP215387U JPH0514452Y2 (en) | 1987-01-10 | 1987-01-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP215387U JPH0514452Y2 (en) | 1987-01-10 | 1987-01-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63111750U JPS63111750U (en) | 1988-07-18 |
| JPH0514452Y2 true JPH0514452Y2 (en) | 1993-04-16 |
Family
ID=30780724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP215387U Expired - Lifetime JPH0514452Y2 (en) | 1987-01-10 | 1987-01-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0514452Y2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
| JP4991410B2 (en) * | 2006-07-06 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | Focused ion beam device |
| JP4982161B2 (en) * | 2006-11-30 | 2012-07-25 | 株式会社日立ハイテクノロジーズ | Gas field ion source and scanning charged particle microscope |
-
1987
- 1987-01-10 JP JP215387U patent/JPH0514452Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63111750U (en) | 1988-07-18 |
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