JPH05148005A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH05148005A JPH05148005A JP3340243A JP34024391A JPH05148005A JP H05148005 A JPH05148005 A JP H05148005A JP 3340243 A JP3340243 A JP 3340243A JP 34024391 A JP34024391 A JP 34024391A JP H05148005 A JPH05148005 A JP H05148005A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- porcelain
- sample
- sintered body
- cao
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims abstract description 22
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 28
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 15
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract description 14
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 13
- 239000003990 capacitor Substances 0.000 abstract description 9
- 229910052709 silver Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910011255 B2O3 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000013329 compounding Methods 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 32
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 26
- 238000010304 firing Methods 0.000 description 20
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 12
- 239000000292 calcium oxide Substances 0.000 description 12
- 239000000395 magnesium oxide Substances 0.000 description 11
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 11
- 239000003985 ceramic capacitor Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910018071 Li 2 O 2 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高周波用積層磁器コン
デンサ、誘電体共振器等に使用するための誘電体磁器組
成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition for use in high frequency laminated ceramic capacitors, dielectric resonators and the like.
【０００２】[0002]
【従来の技術】高周波数領域で使用することができる誘
電体磁器として例えば特開昭５３−３５４５４号公報に
開示されるようにＢａＯ（酸化バリウム）とＺｎＯ（酸
化亜鉛）とＴａ2 Ｏ5 （酸化タンタル）から成る磁器組
成物が知られている。2. Description of the Related Art As a dielectric ceramic which can be used in a high frequency range, for example, BaO (barium oxide), ZnO (zinc oxide), and Ta 2 O 5 (as disclosed in Japanese Patent Laid-Open No. 53-35454). Porcelain compositions comprising tantalum oxide) are known.
【０００３】[0003]
【発明が解決しようとする課題】ところで、従来のＢａ
Ｏ−ＺｎＯ−Ｔａ2Ｏ5 磁器組成物の焼成温度は１３０
０〜１５００℃と比較的高いので、積層磁器コンデンサ
を作製する時には内部電極材料として融点の高いＰｄ
（パラジウム）を主成分とする導電性ペーストを使用し
なければならなかった。しかし、Ｐｄは抵抗率が高いた
めにコンデンサのＱが低下するという欠点、及び高価で
あるという欠点を有する。By the way, the conventional Ba
The firing temperature of the O—ZnO—Ta 2 O 5 porcelain composition was 130.
Since it is relatively high at 0 to 1500 ° C., Pd having a high melting point as an internal electrode material is used when manufacturing a laminated ceramic capacitor.
A conductive paste containing (palladium) as a main component had to be used. However, Pd has the drawback that the Q of the capacitor is lowered due to its high resistivity and that it is expensive.
【０００４】そこで、本発明の目的は、９００℃以下の
焼成で製造することが可能であり且つ高周波数領域で使
用することが可能な誘電体磁器組成物を提供することに
ある。Therefore, an object of the present invention is to provide a dielectric ceramic composition which can be manufactured by firing at 900 ° C. or lower and can be used in a high frequency range.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明は、ｘＢａＯ＋ｙＺｎＯ＋ｚＴａ2 Ｏ5 （但
し、ｘ、ｙ、ｚは０．４≦ｘ≦０．８、０．０５≦ｙ≦
０．３５、０．０５≦ｚ≦０．３５、ｘ＋ｙ＋ｚ＝１を
満足する数値）で表される成分 ２５〜６０重量％と、
ＳｉＯ2 １０〜４０重量％と、ＣａＯ、ＳｒＯ及びＢ
ａＯの内の少なくとも１種から成る成分 １〜２０重量
％と、ＭｇＯ １〜１５重量％と、Ｂ2 Ｏ3 ３〜３０
重量％と、Ｌｉ2 Ｏ ０．１〜３．０重量％とを含む誘
電体磁器組成物に係わるものである。The present invention for attaining the above-mentioned object provides xBaO + yZnO + zTa 2 O 5 (where x, y and z are 0.4 ≦ x ≦ 0.8 and 0.05 ≦ y ≦
0.35, 0.05 ≦ z ≦ 0.35, 25% to 60% by weight of a component represented by a numerical value satisfying x + y + z = 1),
SiO 2 10-40% by weight, CaO, SrO and B
Component consisting of at least one of aO 1 to 20% by weight, MgO 1 to 15% by weight, B 2 O 3 3 to 30
The present invention relates to a dielectric ceramic composition containing 0.1% by weight of Li 2 O and 0.1% by weight of Li 2 O.
【０００６】[0006]
【作用及び効果】本発明によれば、１ＭＨｚにおいて比
誘電率εｒが６．５以上、比誘電率の温度係数Ｔεが−
６０ｐｐｍ／℃〜＋６０ｐｐｍ／℃の誘電体磁器組成物
を提供することができる。本発明の誘電体磁器組成物
は、銀（Ａｇ）、銅（Ｃｕ）等の低融点金属の導電ペー
スト層との同時焼成で得ることができるので、高周波用
積層磁器コンデンサの誘電体磁器として好適なものであ
る。積層磁器コンデンサの内部電極をＡｇ、Ｃｕ等の抵
抗率の小さい金属で形成すれば、Ｑを高めることができ
る。According to the present invention, the relative permittivity ε r is 6.5 or more at 1 MHz and the temperature coefficient T ε of the relative permittivity is −.
It is possible to provide a dielectric ceramic composition of 60 ppm / ° C to +60 ppm / ° C. Since the dielectric ceramic composition of the present invention can be obtained by co-firing with a conductive paste layer of a low melting point metal such as silver (Ag) or copper (Cu), it is suitable as a dielectric ceramic for a high frequency laminated ceramic capacitor. It is something. If the internal electrodes of the laminated ceramic capacitor are formed of a metal having a low resistivity such as Ag or Cu, the Q can be increased.
【０００７】[0007]
【実施例】次に、本発明の実施例（比較例を含む）を説
明する。高周波用磁器コンデンサの誘電体磁器を得るた
めに、表１に示す３６種類の組成の試料を作成した。表
１のｘ、ｙ、ｚは仮焼後又は本焼成後の磁器の主成分を
示す組成式 ｘＢａＯ＋ｙＺｎＯ＋ｚＴａ2 Ｏ5 におけるｘ、ｙ、ｚの値を示す。副成分の欄はＳｉＯ2
（酸化ケイ素）ＣａＯ（酸化カルシウム）、ＳｒＯ（酸
化ストロンチウム）、ＢａＯ（酸化バリウム）、ＭｇＯ
（酸化マグネシウム）、Ｂ2 Ｏ3 （酸化ホウ素）、Ｌｉ
2 Ｏ（酸化リチウム）の焼成後の含有率を重量％で示
す。EXAMPLES Next, examples of the present invention (including comparative examples) will be described. In order to obtain dielectric porcelain for high frequency porcelain capacitors, samples of 36 types of compositions shown in Table 1 were prepared. Table 1 of x, y, z denotes x, y, and z values in the composition formula xBaO + yZnO + zTa 2 O 5 showing the main components of porcelain after calcination or after the sintering. The sub-component column is SiO 2
(Silicon oxide) CaO (calcium oxide), SrO (strontium oxide), BaO (barium oxide), MgO
(Magnesium oxide), B 2 O 3 (boron oxide), Li
The content of 2 O (lithium oxide) after firing is shown by weight%.
【０００８】[0008]
【表１】 [Table 1]
【０００９】[0009]
【表２】 [Table 2]
【００１０】次に、試料Ｎｏ．１に従う高周波用磁器コ
ンデンサの製造方法を詳しく説明する。ｘ＝０．４、ｙ
＝０．３、ｚ＝０．３に従う ０．４ＢａＯ＋０．３ＺｎＯ＋０．３Ｔａ2 Ｏ5 の組成の主成分を得るために、ＢａＣＯ3 （炭酸バリウ
ム）とＺｎＯ（酸化亜鉛）とＴａ2 Ｏ5 （酸化タンタ
ル）とを上記の主成分を得ることができる割合に配合
し、ポリエチレン製ポットに水と共に入れ、湿式混合し
た後脱水乾燥した。次に、この乾燥物を空気中で１００
０〜１２００℃で２時間仮焼し、ＢａＯ（酸化バリウ
ム）とＺｎＯ（酸化亜鉛）とＴａ2 Ｏ5 （酸化タンタ
ル）とから成る主成分材料を得た。Next, the sample No. A method of manufacturing the high frequency porcelain capacitor according to 1 will be described in detail. x = 0.4, y
= 0.3, in order to obtain the main component of the composition of 0.4BaO + 0.3ZnO + 0.3Ta 2 O 5 according to z = 0.3, BaCO 3 (barium carbonate) and ZnO (zinc oxide) and Ta 2 O 5 (oxide Tantalum) was mixed in a proportion such that the above main component could be obtained, and the mixture was put in a polyethylene pot together with water, wet mixed, and then dehydrated and dried. Next, the dried product is dried in air at 100
It was calcined at 0 to 1200 ° C. for 2 hours to obtain a main component material composed of BaO (barium oxide), ZnO (zinc oxide) and Ta 2 O 5 (tantalum oxide).
【００１１】次に、焼成後の磁器においてＳｉＯ2 ２０
重量％、ＳｒＯ１０重量％、ＭｇＯ１０重量％、Ｂ2 Ｏ
3 ９重量％、Ｌｉ2 Ｏ１重量％の割合で副成分を含める
ために、ＳｉＯ2 ４０重量％、ＳｒＯ２０重量％、Ｍｇ
Ｏ２０重量％、Ｂ2 Ｏ3 １８重量％、Ｌｉ2 Ｏ２重量％
の組成の副成分が得られるようにＳｉＯ2 、ＳｒＣＯ3
（炭酸ストロンチウム）、ＭｇＯ、Ｂ2 Ｏ3 、Ｌｉ2 Ｃ
Ｏ3 （炭酸リチウム）を秤量し、これ等の原料をポリエ
チレン製ポットに水と共に入れて、湿式混合した後脱水
乾燥した。次に、この乾燥物を空気中で７５０〜８５０
℃で２時間仮焼し、ＳｉＯ2 とＳｒＯとＭｇＯとＢ2 Ｏ
3 とＬｉ2 Ｏとから成る副成分材料を得た。Next, in the porcelain after firing, SiO 2 20
% By weight, SrO 10% by weight, MgO 10% by weight, B 2 O
3 9% by weight, in order to include the secondary components in a ratio of Li 2 O1 wt%, SiO 2 40 wt%, SrO20 wt%, Mg
O 20 % by weight, B 2 O 3 18% by weight, Li 2 O 2% by weight
SiO 2 , SrCO 3 so that the subcomponents of the composition of
(Strontium carbonate), MgO, B 2 O 3 , Li 2 C
O 3 (lithium carbonate) was weighed, and these raw materials were put in a polyethylene pot together with water, wet mixed, and then dehydrated and dried. Next, the dried product is heated in the air at 750 to 850.
Calcination at ℃ for 2 hours, SiO 2 , SrO, MgO and B 2 O
A subcomponent material consisting of 3 and Li 2 O was obtained.
【００１２】次に、主成分材料５０重量％、副成分材料
５０重量％の比率に各材料を秤量し、これをポリエチレ
ン製ポットに水と共に入れて、湿式混合した後脱水乾燥
し、磁器原料粉末を得た。この磁器原料粉末の組成比は
表１の試料Ｎｏ．１に示す通りである。Next, each material was weighed in a ratio of 50% by weight of the main component material and 50% by weight of the subcomponent material, and this was put in a polyethylene pot together with water, wet-mixed and dehydrated and dried to obtain porcelain raw material powder. Got The composition ratio of this porcelain raw material powder is the sample No. 1 in Table 1. It is as shown in 1.
【００１３】次に、この磁器原料粉末に有機バインダー
を加えて造粒し、この造粒物を直径９．８ｍｍ、厚さ
０．６ｍｍの円板状に、５００ｋｇ／ｃｍ2の圧力で加
圧成形した。次に、この成形体をジルコニアセッタ上に
載せて空気中９００℃の温度で焼成した。この本焼成で
得られた円板状磁器の両主面に銀ペーストを塗布して焼
付け、図１に示す磁器１と一対の電極２、３とから成る
磁器コンデンサを得た。Next, an organic binder is added to this porcelain raw material powder to granulate, and the granulated product is pressed into a disk shape having a diameter of 9.8 mm and a thickness of 0.6 mm at a pressure of 500 kg / cm 2. Molded. Next, this compact was placed on a zirconia setter and fired in air at a temperature of 900 ° C. Silver paste was applied to both main surfaces of the disc-shaped porcelain obtained by the main firing and baked to obtain a porcelain capacitor including the porcelain 1 and a pair of electrodes 2 and 3 shown in FIG.
【００１４】次に、この磁器コンデンサの比誘電率
εｒ、Ｑ値、比誘電率の温度係数Ｔε（ｐｐｍ／℃）を
測定した。なお、比誘電率εｒ及びＱは周波数１ＭＨ
ｚ、電圧１Ｖ、周囲温度２０℃の条件で測定した。温度
係数Ｔεは＋２０℃のεｒを基準にした−２５〜＋２０
℃のεｒ及び＋２０℃〜＋８５℃のεｒの変化率であ
り、１ＭＨｚ、１Ｖの条件で測定した。Next, the relative permittivity ε r , Q value and temperature coefficient T ε (ppm / ° C.) of the relative permittivity of this ceramic capacitor were measured. It should be noted that the relative permittivity ε r and Q are frequency 1 MH
It was measured under the conditions of z, voltage 1 V, and ambient temperature 20 ° C. The temperature coefficient Tε is −25 to +20 based on ε r of + 20 ° C.
The rate of change of ε r at 0 ° C. and ε r at + 20 ° C. to + 85 ° C. was measured under the conditions of 1 MHz and 1V.
【００１５】試料Ｎｏ．２〜３６についても、主成分及
び／又は副成分の組成を変えた他は試料Ｎｏ．１と同一
の方法で磁器コンデンサを作り、同一の方法で特性を測
定した。試料Ｎｏ．１〜３６の特性は表２に示す通りで
ある。Sample No. Sample Nos. 2 to 36 were also changed except that the composition of the main component and / or the subcomponent was changed. A porcelain capacitor was produced by the same method as in No. 1, and the characteristics were measured by the same method. Sample No. The characteristics of 1 to 36 are as shown in Table 2.
【００１６】[0016]
【表３】 [Table 3]
【００１７】[0017]
【表４】 [Table 4]
【００１８】表２から明らかなように、試料Ｎｏ．１の
磁器コンデンサのεｒは１０．０、Ｑは１９００、−２
０〜＋２０℃のＴεは＋５０（ｐｐｍ／℃）、＋２０〜
＋８０℃のＴεは＋５２（ｐｐｍ／℃）である。また、
本発明で特定された範囲の磁器組成物によれば、比誘電
率εｒが６．５〜１０．５、Ｑが１１００〜２０００、
温度係数Ｔεが−６０〜＋６０（ｐｐｍ／℃）の電気的
特性が得られる。なお、試料Ｎｏ．７〜１２、２３〜３
２、３５、３６は上記の所望特性を得ることができない
ので、本発明の範囲外の比較例である。As is clear from Table 2, the sample No. 1 of the magnetic capacitor epsilon r 10.0, Q is 1900 -2
Tε of 0 to + 20 ° C is +50 (ppm / ° C), +20 to
The Tε at + 80 ° C. is +52 (ppm / ° C.). Also,
According to the porcelain composition in the range specified by the present invention, the relative permittivity ε r is 6.5 to 10.5, Q is 1100 to 2000,
Electrical characteristics having a temperature coefficient Tε of −60 to +60 (ppm / ° C.) can be obtained. Sample No. 7-12, 23-3
Nos. 2, 35, and 36 are comparative examples outside the scope of the present invention because the above-mentioned desired characteristics cannot be obtained.
【００１９】次に、本発明の高周波誘電体磁器組成物の
組成範囲の限定理由を説明する。試料Ｎｏ．１〜１２で
は、主成分のｘ、ｙ、ｚ即ち、ＢａＯとＺｎＯとＴａ2
Ｏ5 との混合比率が種々変えられている。試料Ｎｏ．７
に示すようにｘが０．３の場合には、９００℃の焼成で
焼結体が得られないが、試料Ｎｏ．１に示すようにｘが
０．４であれば、所望の電気的特性を有する焼結体が得
られる。従って、ｘの下限値は０．４である。試料Ｎ
ｏ．８に示すようにｘの値が０．９の場合には、９００
℃の焼成で焼結体が得られないが、試料Ｎｏ．２に示す
ようにｘが０．８の場合には所望の電気的特性を有する
焼結体が得られる。従って、ｘの上限値は０．８であ
る。Next, the reasons for limiting the composition range of the high frequency dielectric ceramic composition of the present invention will be explained. Sample No. 1 to 12, x, y, z of the main components, that is, BaO, ZnO and Ta 2
The mixing ratio with O 5 is variously changed. Sample No. 7
When x is 0.3 as shown in Table 1, a sintered body cannot be obtained by firing at 900 ° C. As shown in 1, when x is 0.4, a sintered body having desired electrical characteristics can be obtained. Therefore, the lower limit value of x is 0.4. Sample N
o. As shown in 8, when the value of x is 0.9, 900
Although a sintered body cannot be obtained by firing at ℃, sample No. As shown in 2, when x is 0.8, a sintered body having desired electrical characteristics can be obtained. Therefore, the upper limit of x is 0.8.
【００２０】試料Ｎｏ．９に示すようにｙが０．０３の
場合には、９００℃の焼成で焼結体が得られないが、試
料Ｎｏ．３に示すようにｙが０．０５の場合には所望特
性を有する焼結体が得られる。従って、ｙの下限値は
０．０５である。試料Ｎｏ．１０に示すようにｙが０．
４の場合には、９００℃の焼成で焼結体が得られない
が、試料Ｎｏ．４に示すようにｙが０．３５の場合には
所望特性の焼結体が得られる。従って、ｙの上限値は
０．３５である。Sample No. As shown in FIG. 9, when y was 0.03, a sintered body could not be obtained by firing at 900 ° C. As shown in 3, when y is 0.05, a sintered body having desired characteristics can be obtained. Therefore, the lower limit value of y is 0.05. Sample No. As shown in FIG. 10, y is 0.
In the case of No. 4, although a sintered body could not be obtained by firing at 900 ° C., Sample No. As shown in 4, when y is 0.35, a sintered body having desired characteristics can be obtained. Therefore, the upper limit value of y is 0.35.
【００２１】試料Ｎｏ．１１に示すようにｚが０．０３
の場合には、９００℃の焼成で焼結体が得られないが、
試料Ｎｏ．５に示すようにｚが０．０５の場合には所望
特性を有する焼結体が得られる。従って、ｚの下限値は
０．０５である。試料Ｎｏ．１２に示すようにｚが０．
４の場合には、９００℃の焼成で焼結体が得られない
が、試料Ｎｏ．６に示すようにｚが０．３５の場合には
所望特性を有する焼結体が得られる。従って、ｚの上限
値は０．３５である。Sample No. As shown in 11, z is 0.03
In the case of, although a sintered body cannot be obtained by firing at 900 ° C,
Sample No. As shown in 5, when z is 0.05, a sintered body having desired characteristics can be obtained. Therefore, the lower limit of z is 0.05. Sample No. 12, z is 0.
In the case of No. 4, although a sintered body could not be obtained by firing at 900 ° C., Sample No. As shown in 6, when z is 0.35, a sintered body having desired characteristics can be obtained. Therefore, the upper limit of z is 0.35.
【００２２】試料Ｎｏ．１３〜３６では主成分のｘ、
ｙ、ｚが固定され、副成分が種々変えられている。試料
Ｎｏ．２３に示すようにＳｉＯ2 が１０重量％の場合に
はＱが６００となり、所望特性が得られないが、試料Ｎ
ｏ．１３に示すようにＳｉＯ2 が１０重量％になると、
所望特性が得られる。従って、ＳｉＯ2 の含有率の下限
は１０重量％である。試料Ｎｏ．２４に示すようにＳｉ
Ｏ2 が４５重量％の場合には９００℃の焼成で焼結体が
得られないが、試料Ｎｏ．１４に示すようにＳｉＯ2 が
４０重量％の場合には所望特性が得られる。従って、Ｓ
ｉＯ2 の含有率の上限は４０重量％である。Sample No. 13 to 36, the main component x,
y and z are fixed, and various subcomponents are changed. Sample No. As shown in FIG. 23, when SiO 2 is 10% by weight, Q becomes 600 and desired characteristics cannot be obtained.
o. As shown in 13, when SiO 2 becomes 10% by weight,
The desired properties are obtained. Therefore, the lower limit of the SiO 2 content is 10% by weight. Sample No. As shown in 24
When O 2 is 45% by weight, a sintered body cannot be obtained by firing at 900 ° C. As shown in 14, when SiO 2 is 40% by weight, desired characteristics are obtained. Therefore, S
The upper limit of the content of iO 2 is 40% by weight.
【００２３】ＣａＯ、ＳｒＯ、ＢａＯは第２族の金属の
酸化物であって同様な作用を有する。従って、試料Ｎ
ｏ．１３〜２２に示すようにＣａＯ、ＳｒＯ、ＢａＯを
単独で使用してもよいし、混合して使用してもよい。こ
れ等の添加量（含有率）はこれ等の合計で決まる。試料
Ｎｏ．２５に示すようにＣａＯ、ＳｒＯ、ＢａＯの和が
０．５重量％の場合には９００℃の焼成で焼結体が得ら
れないが、試料Ｎｏ．１５に示すようにＣａＯ、Ｓｒ
Ｏ、ＢａＯの和が１重量％の場合には所望特性の焼結体
が得られる。従って、ＣａＯ、ＳｒＯ、ＢａＯ成分の含
有率の下限値は１重量％である。試料Ｎｏ．２６に示す
ようにＣａＯ、ＳｒＯ、ＢａＯの和が２５重量％の場合
にはＱが７００となり、所望特性が得られないが、試料
Ｎｏ．１６に示すようにＣａＯ、ＳｒＯ、ＢａＯの和が
２０重量％の場合には所望特性を有する焼結体が得られ
る。従って、ＣａＯ、ＳｒＯ、ＢａＯ成分の含有率の上
限値は２０重量％である。CaO, SrO, and BaO are oxides of Group 2 metals and have similar functions. Therefore, sample N
o. As shown in 13 to 22, CaO, SrO, and BaO may be used alone or in combination. The addition amount (content rate) of these is determined by the total of these. Sample No. 25, when the sum of CaO, SrO, and BaO is 0.5% by weight, a sintered body cannot be obtained by firing at 900 ° C. As shown in 15, CaO, Sr
When the sum of O and BaO is 1% by weight, a sintered body having desired characteristics can be obtained. Therefore, the lower limit of the content of CaO, SrO, and BaO components is 1% by weight. Sample No. As shown in FIG. 26, when the sum of CaO, SrO and BaO is 25% by weight, Q becomes 700 and desired characteristics cannot be obtained. As shown in 16, when the sum of CaO, SrO and BaO is 20% by weight, a sintered body having desired characteristics can be obtained. Therefore, the upper limit of the content of CaO, SrO, and BaO components is 20% by weight.
【００２４】試料Ｎｏ．２７に示すようにＭｇＯが０．
１重量％の場合には９００℃の焼成で焼結体が得られな
いが、試料Ｎｏ．１７に示すようにＭｇＯが１重量％に
なると、所望特性の焼結体が得られる。従って、ＭｇＯ
の含有率の下限は１重量％である。試料Ｎｏ．２８に示
すようにＭｇＯが２０重量％の場合にはＱが５００であ
って所望特性が得られないが、試料Ｎｏ．１８に示すよ
うにＭｇＯが１５重量％の場合には所望特性が得られ
る。従って、ＭｇＯの含有率の上限は１５重量％であ
る。Sample No. As shown in FIG.
In the case of 1% by weight, a sintered body cannot be obtained by firing at 900 ° C. As shown in 17, when MgO is 1% by weight, a sintered body having desired characteristics can be obtained. Therefore, MgO
The lower limit of the content of is 1% by weight. Sample No. As shown in 28, when MgO is 20% by weight, Q is 500 and desired characteristics cannot be obtained. As shown in 18, when MgO is 15% by weight, the desired characteristics are obtained. Therefore, the upper limit of the MgO content is 15% by weight.
【００２５】試料Ｎｏ．２９に示すようにＢ2 Ｏ3 が１
重量％の場合には９００℃の焼成で焼結体が得られない
が、試料Ｎｏ．１９に示すようにＢ2 Ｏ3 が３重量％に
なると、所望特性を有する焼結体が得られる。従って、
Ｂ2 Ｏ3 の含有率の下限は３重量％である。試料Ｎｏ．
３０に示すようにＢ2 Ｏ3 が４０重量％の場合には９０
０℃の焼成で焼結体が得られないが、試料Ｎｏ．２０に
示すようにＢ2 Ｏ3 が３０重量％の場合には所望特性を
有する焼結体が得られる。従って、Ｂ2 Ｏ3 の含有率の
上限は３０重量％である。Sample No. As shown in 29, B 2 O 3 is 1
In the case of weight%, a sintered body cannot be obtained by firing at 900 ° C. As shown in 19, when B 2 O 3 is 3% by weight, a sintered body having desired characteristics can be obtained. Therefore,
The lower limit of the B 2 O 3 content is 3% by weight. Sample No.
As shown in 30, when B 2 O 3 is 40% by weight, 90
Although a sintered body cannot be obtained by firing at 0 ° C., sample No. As shown in 20, when B 2 O 3 is 30% by weight, a sintered body having desired characteristics can be obtained. Therefore, the upper limit of the B 2 O 3 content is 30% by weight.
【００２６】試料Ｎｏ．３１に示すようにＬｉ2 Ｏが
０．０１重量％の場合にはＱが９００℃の焼成で焼結体
が得られないが、試料Ｎｏ．２１に示すようにＬｉ2 Ｏ
が０．１重量％になると、所望特性を有する焼結体が得
られる。従って、Ｌｉ2 Ｏの含有率の下限は０．１重量
％である。試料Ｎｏ．３２に示すようにＬｉ2 Ｏが５重
量％の場合には９００℃の焼成で焼結体が得られない
が、試料Ｎｏ．２２に示すようにＬｉ2 Ｏが３重量％の
場合には所望特性を有する焼結体が得られる。従って、
Ｌｉ2 Ｏの含有率の上限は３重量％である。Sample No. As shown in 31, when Li 2 O is 0.01% by weight, a sintered body cannot be obtained by firing at a Q of 900 ° C. As shown in 21, Li 2 O
Is 0.1% by weight, a sintered body having desired characteristics can be obtained. Therefore, the lower limit of the Li 2 O content is 0.1% by weight. Sample No. As shown in FIG. 32, when Li 2 O was 5% by weight, a sintered body could not be obtained by firing at 900 ° C. As shown in No. 22, when Li 2 O is 3% by weight, a sintered body having desired characteristics can be obtained. Therefore,
The upper limit of the Li 2 O content is 3% by weight.
【００２７】試料Ｎｏ．３５に示すように主成分の含有
率が１５重量％の場合にはＱが５００であり、所望特性
が得られないが、試料Ｎｏ．３３に示すように主成分の
含有率が２５重量％の場合には所望特性が得られる。従
って、主成分の含有率の下限は２５重量％である。試料
Ｎｏ．３６に示すように主成分の含有率が７０重量％の
場合には９００℃の焼成で焼結体が得られないが、試料
Ｎｏ．３４に示すように主成分の含有率が６０重量％で
所望特性を有する焼結体が得られる。従って、主成分の
含有率の上限は６０重量％である。Sample No. As shown in No. 35, when the content of the main component is 15% by weight, Q is 500 and desired characteristics cannot be obtained. As shown in 33, when the content of the main component is 25% by weight, desired characteristics are obtained. Therefore, the lower limit of the content of the main component is 25% by weight. Sample No. As shown in No. 36, when the content of the main component is 70% by weight, a sintered body cannot be obtained by firing at 900 ° C. As shown in No. 34, a sintered body having desired characteristics with a main component content of 60% by weight can be obtained. Therefore, the upper limit of the content of the main component is 60% by weight.
【００２８】試料Ｎｏ．１〜３６では、誘電体磁器の特
性比較を容易に行うために単層の磁器コンデンサを作製
したが、この代りに、図２に示すように、誘電体磁器１
１の中にＡｇ（銀）、Ｃｕ（銅）等の低融点金属の内部
電極１２を設け、この内部電極１２に一対の外部電極１
３、１４を接続した積層磁器コンデンサを作製して同様
な特性測定をしたところ、同様な効果が得られた。積層
磁器コンデンサを製作する場合には、磁器生シート（グ
リーンシート）に内部電極用導電性ペーストを塗布した
ものを積層して生チップを作り、内部電極の焼付と磁器
の焼成を同時に行うが、本発明に従う磁器１１は９００
℃以下で焼成で得ることができるので、内部電極１２と
して抵抗率の小さいＡｇ、Ｃｕ等の低融点金属を使用す
ることが可能になり、Ｑ値の向上が達成される。Sample No. 1 to 36, a single-layer porcelain capacitor was manufactured in order to easily compare the characteristics of the dielectric porcelain, but instead of this, as shown in FIG.
1 is provided with an internal electrode 12 of a low melting point metal such as Ag (silver) or Cu (copper), and a pair of external electrodes 1 is provided on the internal electrode 12.
When a laminated ceramic capacitor in which Nos. 3 and 14 were connected was manufactured and the same characteristics were measured, the same effect was obtained. When manufacturing a laminated porcelain capacitor, a porcelain raw sheet (green sheet) coated with a conductive paste for internal electrodes is laminated to make a raw chip, and the internal electrodes are baked and the porcelain is fired at the same time. The porcelain 11 according to the invention is 900
Since it can be obtained by firing at a temperature of not more than 0 ° C., it is possible to use a low melting point metal such as Ag or Cu having a low resistivity as the internal electrode 12, and an improvement in Q value is achieved.
【００２９】[0029]
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） 主成分を得るための出発原料としてＢａＣＯ3
の代りにＢａＯを使用することができる。また、副成分
を得るための出発原料としてＣａＣＯ3 、ＳｒＣＯ3 、
Ｌｉ2 ＣＯ3 の代りにＣａＯ、ＳｒＯ、Ｌｉ2 Ｏを使用
することができる。 （２） 本焼成の温度は例えば７５０〜１２００℃程度
の範囲で変えることができる。 （３） 本発明に従う誘電体磁器組成物を誘電体共振器
の磁器、多層回路基板等にも使用可能である。MODIFICATION The present invention is not limited to the above-described embodiments, and the following modifications are possible, for example. (1) BaCO 3 as a starting material for obtaining the main component
Alternatively, BaO can be used. In addition, CaCO 3 , SrCO 3 , and
CaO instead of Li 2 CO 3, SrO, and Li 2 O can be used. (2) The main calcination temperature can be changed within a range of, for example, about 750 to 1200 ° C. (3) The dielectric porcelain composition according to the present invention can also be used for porcelains of dielectric resonators, multilayer circuit boards and the like.
【図１】実施例に係わる磁器コンデンサを示す断面図で
ある。FIG. 1 is a cross-sectional view showing a ceramic capacitor according to an example.
【図２】実施例に従う積層磁器コンデンサを示す断面図
である。FIG. 2 is a sectional view showing a laminated ceramic capacitor according to an example.
１ 磁器 ２，３ 電極 1 porcelain 2 and 3 electrodes
───────────────────────────────────────────────────── フロントページの続き (72)発明者 水野 洋一 東京都台東区上野６丁目16番20号 太陽誘 電株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoichi Mizuno 6-16-20 Ueno Taito-ku, Tokyo Taiyo Induction Co., Ltd.
Claims (1)
る成分 １〜２０重量％と、 ＭｇＯ １〜１５重量％と、 Ｂ2 Ｏ3 ３〜３０重量％と、 Ｌｉ2 Ｏ ０．１〜３．０重量％と を含む誘電体磁器組成物。1. xBaO + yZnO + zTa 2 O 5 (where x, y and z satisfy 0.4 ≦ x ≦ 0.8 0.05 ≦ y ≦ 0.35 0.05 ≦ z ≦ 0.35 x + y + z = 1. 25% to 60% by weight of a component represented by the formula: 10 to 40% by weight of SiO 2 , 1 to 20% by weight of a component consisting of at least one of CaO, SrO and BaO, and 1 to 15% by weight of MgO. %, B 2 O 3 3 to 30% by weight, and Li 2 O 0.1 to 3.0% by weight, the dielectric ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3340243A JPH05148005A (en) | 1991-11-29 | 1991-11-29 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3340243A JPH05148005A (en) | 1991-11-29 | 1991-11-29 | Dielectric porcelain composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05148005A true JPH05148005A (en) | 1993-06-15 |
Family
ID=18335069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3340243A Pending JPH05148005A (en) | 1991-11-29 | 1991-11-29 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05148005A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0838446A1 (en) * | 1996-10-25 | 1998-04-29 | Ngk Spark Plug Co., Ltd | A dielectric material, a method for producing the same and a dielectric resonator device comprising same |
| US7245194B2 (en) | 2003-09-30 | 2007-07-17 | Sony Corporation | Resonator and dielectric filter |
| CN105541299A (en) * | 2014-10-27 | 2016-05-04 | Tdk株式会社 | Dielectric composition and electronic component |
| KR20160049495A (en) * | 2014-10-27 | 2016-05-09 | 티디케이가부시기가이샤 | Dielectric composition and electronic component |
| JP2020161625A (en) * | 2019-03-26 | 2020-10-01 | Tdk株式会社 | Dielectric membranes and electronic components |
| US11201013B2 (en) * | 2019-03-26 | 2021-12-14 | Tdk Corporation | Dielectric film and electronic component |
| US20230094616A1 (en) * | 2021-09-30 | 2023-03-30 | Tdk Corporation | Thin film capacitor, power source module, and electronic device |
| CN116092828A (en) * | 2021-11-05 | 2023-05-09 | Tdk株式会社 | Dielectric composition and electronic component |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151658A (en) * | 1986-12-16 | 1988-06-24 | 株式会社村田製作所 | Sintering aid for ceramics |
-
1991
- 1991-11-29 JP JP3340243A patent/JPH05148005A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151658A (en) * | 1986-12-16 | 1988-06-24 | 株式会社村田製作所 | Sintering aid for ceramics |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0838446A1 (en) * | 1996-10-25 | 1998-04-29 | Ngk Spark Plug Co., Ltd | A dielectric material, a method for producing the same and a dielectric resonator device comprising same |
| US7245194B2 (en) | 2003-09-30 | 2007-07-17 | Sony Corporation | Resonator and dielectric filter |
| CN105541299A (en) * | 2014-10-27 | 2016-05-04 | Tdk株式会社 | Dielectric composition and electronic component |
| EP3016111A1 (en) * | 2014-10-27 | 2016-05-04 | TDK Corporation | Dielectric composition and electronic component |
| KR20160049495A (en) * | 2014-10-27 | 2016-05-09 | 티디케이가부시기가이샤 | Dielectric composition and electronic component |
| JP2016084268A (en) * | 2014-10-27 | 2016-05-19 | Tdk株式会社 | Dielectric composition and electronic component |
| US9567263B2 (en) | 2014-10-27 | 2017-02-14 | Tdk Corporation | Dielectric composition and electronic component |
| JP2020161625A (en) * | 2019-03-26 | 2020-10-01 | Tdk株式会社 | Dielectric membranes and electronic components |
| CN111747729A (en) * | 2019-03-26 | 2020-10-09 | Tdk株式会社 | Dielectric film and electronic component |
| US11201013B2 (en) * | 2019-03-26 | 2021-12-14 | Tdk Corporation | Dielectric film and electronic component |
| US11257620B2 (en) * | 2019-03-26 | 2022-02-22 | Tdk Corporation | Dielectric film and electronic component |
| US20230094616A1 (en) * | 2021-09-30 | 2023-03-30 | Tdk Corporation | Thin film capacitor, power source module, and electronic device |
| CN116092828A (en) * | 2021-11-05 | 2023-05-09 | Tdk株式会社 | Dielectric composition and electronic component |
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