JPH05166472A - Electron beam generating device and manufacture thereof - Google Patents
Electron beam generating device and manufacture thereofInfo
- Publication number
- JPH05166472A JPH05166472A JP33300591A JP33300591A JPH05166472A JP H05166472 A JPH05166472 A JP H05166472A JP 33300591 A JP33300591 A JP 33300591A JP 33300591 A JP33300591 A JP 33300591A JP H05166472 A JPH05166472 A JP H05166472A
- Authority
- JP
- Japan
- Prior art keywords
- linear cathode
- substrate
- electron beam
- curved
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
(57)【要約】
【目的】 発生熱による湾曲基板の熱膨張や絶縁膜の膜
厚むらによる電極の変形が生じるのを防止する。
【構成】 少なくとも線状カソード38と、この線状カソ
ード38を当接・保持する線状カソード支持部材37と、前
記線状カソード38と前記線状カソード支持部材37とを所
定の湾曲形状に保持する湾曲基板30とを備えた電子ビー
ム発生装置であって、前記湾曲基板30は、金属基板にパ
ンチング方式によりスルーホール33を設け、電着プロセ
スによって絶縁膜34を成膜している。
(57) [Abstract] [Purpose] To prevent the thermal expansion of the curved substrate due to the generated heat and the deformation of the electrode due to the unevenness of the thickness of the insulating film. [Structure] At least a linear cathode 38, a linear cathode support member 37 that abuts and holds the linear cathode 38, and the linear cathode 38 and the linear cathode support member 37 are held in a predetermined curved shape. The curved substrate 30 includes a through hole 33 formed in a metal substrate by a punching method, and an insulating film 34 is formed by an electrodeposition process.
Description
【0001】[0001]
【産業上の利用分野】本発明は、文字あるいは画像表示
用のカラーテレビジョン受像機やディスプレイなどに使
用する、線状カソードを用いた電子ビーム発生装置およ
びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam generator using a linear cathode for use in a color television receiver or display for displaying characters or images, and a method for manufacturing the same.
【0002】[0002]
【従来の技術】従来、電子ビーム発生装置としては、た
とえば特開昭54-14808号公報に示されている。図5はそ
の従来の電子ビーム発生装置の分解斜視図であり、1は
電子ビーム制御電極2を配設した絶縁基板である。この
絶縁基板1は、電子ビーム制御電極2を避けてピン取り
付け穴3が設けられている。4は芯線が高融点金属線、
たとえばタングステン線でできており、その表面に熱電
子放射材料が塗布された線状カソードである。線状カソ
ード4は電子ビーム制御電極2とほぼ直交するように複
数本架張されている。線条カソード4と電子ビーム制御
電極2とが一定の間隔を保持できるように、線条カソー
ド4はベース基板5の両端部の支持金具6によりバネ作
用を持たせて架張されている。電子ビーム制御電極2の
ピッチおよび線条カソード4のピッチは電子ビームの必
要密度に応じて決められる。7および8は電子ビームを
集束された状態で取り出すための金属製薄板でできた電
極であって、各線状カソード4の長手方向に沿って設け
られた貫通孔9,10の孔径は必要な電子ビームの大き
さ、各電極の位置関係によって決められる。電極7およ
び8にはピン取り付け穴11が設けられている。2. Description of the Related Art Conventionally, an electron beam generator is disclosed in, for example, Japanese Patent Laid-Open No. 54-14808. FIG. 5 is an exploded perspective view of the conventional electron beam generator, and 1 is an insulating substrate provided with an electron beam control electrode 2. The insulating substrate 1 is provided with pin mounting holes 3 while avoiding the electron beam control electrodes 2. 4, the core wire is a refractory metal wire,
For example, a linear cathode made of a tungsten wire, the surface of which is coated with a thermionic emission material. A plurality of linear cathodes 4 are stretched so as to be substantially orthogonal to the electron beam control electrode 2. In order that the linear cathode 4 and the electron beam control electrode 2 can maintain a constant space, the linear cathode 4 is stretched by supporting metal fittings 6 at both ends of the base substrate 5 with a spring action. The pitch of the electron beam control electrodes 2 and the pitch of the filament cathodes 4 are determined according to the required density of electron beams. Reference numerals 7 and 8 are electrodes made of a thin metal plate for taking out the electron beam in a focused state, and the through holes 9 and 10 provided along the longitudinal direction of each linear cathode 4 have a required diameter of electrons. It is determined by the size of the beam and the positional relationship between the electrodes. The electrodes 7 and 8 are provided with pin mounting holes 11.
【0003】以上の絶縁基板1、線状カソード4および
金属製の電極7および8は一定間隔で設けられたピン12
でベース基板5に取り付けられている。また電子ビーム
制御電極2および線状カソード4と金属製の電極7とは
間隔を一定に保つためにリング状のスペーサ13がピンを
通して挿入されている。The insulating substrate 1, the linear cathode 4 and the metal electrodes 7 and 8 described above are provided with pins 12 arranged at regular intervals.
And is attached to the base substrate 5. A ring-shaped spacer 13 is inserted through a pin in order to keep the distance between the electron beam control electrode 2 and the linear cathode 4 and the metal electrode 7 constant.
【0004】また、金属製の電極7と8は外枠の個所で
絶縁保持されている。そして、これらの部品は真空ガラ
ス容器に納められている。以上のように構成された従来
の電子ビーム発生装置においては、線状カソード4を約
650 ℃に保ち、絶縁基板1上の電子ビーム制御電極2、
電極7および8などの各々に印加する電圧を変化させ
て、線条カソード4から電子ビームを引き出し、蛍光体
面(図示せず)に電子ビームを導き、蛍光体を照射して
いる。The electrodes 7 and 8 made of metal are insulated and held at the outer frame. And these parts are stored in a vacuum glass container. In the conventional electron beam generator configured as described above, the linear cathode 4 is
Electron beam control electrode 2 on insulating substrate 1 kept at 650 ℃,
The voltage applied to each of the electrodes 7 and 8 is changed to extract an electron beam from the filament cathode 4 and guide the electron beam to a phosphor surface (not shown) to irradiate the phosphor.
【0005】また、図6には、特願平2−143119号公報
に記載されている電子ビーム発生装置の断面図であり、
前記図5の従来例が大型化したときに発生する線状カソ
ード4´の振動を防止する目的とした構成に関するもの
である。すなわちベース基板5´および絶縁基板1´を
全体に湾曲形状とし、絶縁基板1´上には電子ビーム制
御電極2´に対応する部分に開口14を設けた絶縁・耐熱
性を有する線状カソード支持部材15を積層し、その表面
に線状カソード4´を当設・保持しているものである。
また16,17 は湾曲を保つための補強リブであり、ピン取
り付け穴を利用して、ベース基板5´と絶縁基板1´、
あるいはカソード支持部材15などがピン12´によって固
定されている。Further, FIG. 6 is a sectional view of an electron beam generator described in Japanese Patent Application No. 2-143119.
The conventional example shown in FIG. 5 relates to a structure for preventing the vibration of the linear cathode 4'generated when the size is increased. That is, the base substrate 5'and the insulating substrate 1'are made into a curved shape as a whole, and the insulating substrate 1'is provided with an opening 14 at a portion corresponding to the electron beam control electrode 2 ', and a linear cathode support having insulation and heat resistance. The member 15 is laminated, and the linear cathode 4'is provided and held on the surface thereof.
Reference numerals 16 and 17 are reinforcing ribs for keeping the curvature, and the base mounting board 5'and the insulating board 1 ', using the pin mounting holes,
Alternatively, the cathode support member 15 or the like is fixed by the pin 12 '.
【0006】図7は従来例において絶縁基板1´上に電
着プロセスによって絶縁膜を成膜した際の特徴を示す概
略図である。この絶縁基板1´の成膜プロセスを図8の
電着プロセスの概念図を用いて説明する。FIG. 7 is a schematic view showing the characteristics when an insulating film is formed on an insulating substrate 1'by an electrodeposition process in a conventional example. The film forming process of the insulating substrate 1'will be described with reference to the conceptual diagram of the electrodeposition process of FIG.
【0007】まず、スルーホール18を所定パターンに設
けた薄板金属基板19(本発明では1mm以下)をマイナス
電極20とし、対向電極をプラス電極21とし微細粒径のガ
ラス粒子22、たとえば無アルカリ結晶化ガラス(SiO2-B
2O5-MgO-CaO)をイソプロピルアルコール23中に分散さ
せ、電解槽24中で両電極20,21 に電界をかけるとマイナ
ス電極である金属基板19にガラス粒子22を電気泳動し皮
膜が形成されるものである。その後、乾燥焼成プロセス
を経ることにより、緻密で密着力に富む絶縁皮膜を形成
することができる。First, a thin metal substrate 19 (1 mm or less in the present invention) having through holes 18 formed in a predetermined pattern is used as a negative electrode 20, a counter electrode is a positive electrode 21, and glass particles 22 having a fine particle size, for example, an alkali-free crystal. Glass (SiO 2 -B
(2 O 5 -MgO-CaO) is dispersed in isopropyl alcohol 23, and when an electric field is applied to both electrodes 20, 21 in electrolytic cell 24, glass particles 22 are electrophoresed on metal substrate 19 which is a negative electrode to form a film. Is done. Thereafter, a dry firing process is performed to form a dense insulating film having a high adhesiveness.
【0008】[0008]
【発明が解決しようとする課題】しかしながら、上記の
ような構成では、特に大型化になった場合や、輝度を必
要としてカソードパワーを上げた場合などに、絶縁基板
1および1´の製造コストが高くなるといった課題や、
発生熱による基板1, 1´の熱膨張や絶縁膜の膜厚むら
による電極の変形が生じ、電子ビームのランデングがず
れて不良画像が発生するといった課題を生じていた。However, in the above-mentioned structure, the manufacturing cost of the insulating substrates 1 and 1 ′ is increased when the size is increased or when the cathode power is increased to require brightness. Problems such as getting higher,
The generated heat causes thermal expansion of the substrates 1 and 1'and deformation of the electrodes due to unevenness of the thickness of the insulating film, which causes a problem that the landing of the electron beam is shifted and a defective image is generated.
【0009】たとえば、上記のような電着プロセスで行
なう場合、図7に示すように、金属基板19をエッチング
処理によってスルーホール18を設けると、その端部25は
鋭角なエッジ部を形成し、それ故、電着プロセスのとき
にその端部25に電流集中が発生して、図のような膜厚過
多領域26が広い範囲にわたって形成されるものであっ
た。この膜厚過多領域26はメニスカスと呼ばれている。
この領域の大きさH1は膜厚やスルーホール径にもよる
が、1mmの穴径で100 μmの膜厚とすると約3mmにもな
り、それ故前述のそのスルーホール18の外周部上に設け
て図6のカソード4´と電子ビーム制御電極2´間の距
離を厳密に保つため印刷によって形成された絶縁層の厚
みコントロールができなくなり、結果として画質不良が
発生するものであった。For example, in the case of performing the electrodeposition process as described above, when the through hole 18 is provided in the metal substrate 19 by etching as shown in FIG. 7, the end portion 25 forms an acute edge portion, Therefore, current concentration occurs at the end portion 25 during the electrodeposition process, and the excessive film thickness region 26 as shown in the figure is formed over a wide range. The excessive film thickness region 26 is called a meniscus.
The size H1 of this region depends on the film thickness and the diameter of the through hole, but if the hole diameter of 1 mm is 100 μm and the film thickness is about 3 mm, then it is provided on the outer periphery of the through hole 18 described above. Since the distance between the cathode 4'and the electron beam control electrode 2'in FIG. 6 is strictly maintained, the thickness of the insulating layer formed by printing cannot be controlled, resulting in defective image quality.
【0010】またこのように金属基板19をエッチング処
理すると金属基板19表面には微細なピット(穴)が発生
し、電着プロセスのときに膜の割れなどの欠陥が発生し
易く、はなはだ不良発生率の高いものであった。When the metal substrate 19 is thus etched, fine pits (holes) are formed on the surface of the metal substrate 19, and defects such as film cracks are likely to occur during the electrodeposition process, resulting in a bare defect. The rate was high.
【0011】本発明は、このような問題点を解決するも
ので製造コストが安価でさらに画像不良の無い電子ビー
ム発生装置を提供するものである。The present invention solves these problems and provides an electron beam generator which is inexpensive to manufacture and has no image defects.
【0012】[0012]
【課題を解決するための手段】上記問題点を解決するた
めの本発明の技術的手段は次の通りである。請求項1の
本発明は、少なくとも線状カソードと、この線状カソー
ドを当接・保持する線状カソード支持部材と、前記線状
カソードと前記線状カソード支持部材とを所定の湾曲形
状に保持する湾曲基板とを備えた電子ビーム発生装置で
あって、前記湾曲基板は、金属基板にパンチング方式に
よりスルーホールを設け、電着プロセスによって絶縁膜
を成膜している。The technical means of the present invention for solving the above problems are as follows. According to the first aspect of the present invention, at least a linear cathode, a linear cathode support member that abuts and holds the linear cathode, and the linear cathode and the linear cathode support member are held in a predetermined curved shape. In the electron beam generator, the curved substrate has a through hole formed in a metal substrate by a punching method, and an insulating film is formed by an electrodeposition process.
【0013】請求項2の本発明は、少なくとも線状カソ
ードと、この線状カソードを当接・保持する線状カソー
ド支持部材と、前記線状カソードと前記線状カソード支
持部材とを所定の湾曲形状に保持する湾曲基板とを備え
た電子ビーム発生装置の製造方法であって、前記湾曲基
板は、金属基板にパンチング方式により湾曲基板の外周
縁側から内周縁側方向にスルーホールを穿設した後、電
着プロセスによって絶縁膜を成膜し、湾曲基板の外周縁
側の絶縁膜上に複数の電子ビーム制御電極と、同じ絶縁
膜上のスルーホールの周囲に絶縁層とを印刷プロセスに
より設けている。According to a second aspect of the present invention, at least a linear cathode, a linear cathode support member that abuts and holds the linear cathode, and the linear cathode and the linear cathode support member are curved in a predetermined manner. A method of manufacturing an electron beam generator comprising: a curved substrate that holds a shape, wherein the curved substrate is formed by punching a through hole in a metal substrate from an outer peripheral edge side to an inner peripheral edge side by a punching method. , An insulating film is formed by an electrodeposition process, and a plurality of electron beam control electrodes are provided on the insulating film on the outer peripheral edge side of the curved substrate, and an insulating layer is provided around a through hole on the same insulating film by a printing process. ..
【0014】請求項3の本発明は、少なくとも線状カソ
ードと、この線状カソードを当接・保持する線状カソー
ド支持部材と、前記線状カソードと前記線状カソード支
持部材とを所定の湾曲形状に保持する湾曲基板とを備え
た電子ビーム発生装置であって、前記湾曲基板は、金属
基板に溶射プロセスによって溶射膜を成膜し、その溶射
膜表層に、加熱後セラミック化する有機金属ポリマー層
を設けている。According to a third aspect of the present invention, at least a linear cathode, a linear cathode support member that abuts and holds the linear cathode, and the linear cathode and the linear cathode support member are curved in a predetermined manner. An electron beam generator comprising a curved substrate that holds a shape, wherein the curved substrate forms a sprayed film on a metal substrate by a spraying process, and the surface layer of the sprayed film is an organometallic polymer that becomes ceramic after heating. Layers are provided.
【0015】請求項4の本発明は、少なくとも線状カソ
ードと、この線状カソードを当接・保持する線状カソー
ド支持部材と、前記線状カソードと前記線状カソード支
持部材とを所定の湾曲形状に保持する湾曲基板とを備え
た電子ビーム発生装置の製造方法であって、前記湾曲基
板は、金属基板に溶射プロセスによって溶射膜を成膜し
た後、その溶射膜表層に有機金属ポリマーを塗布焼成し
て気孔を封孔し、前記有機金属ポリマー表面に複数の電
子ビーム制御電極と、前記スルーホール周囲に絶縁層と
を印刷プロセスで設けている。According to a fourth aspect of the present invention, at least a linear cathode, a linear cathode support member that abuts and holds the linear cathode, and the linear cathode and the linear cathode support member are curved in a predetermined manner. A method of manufacturing an electron beam generator comprising a curved substrate that holds a shape, wherein the curved substrate has a sprayed film formed on a metal substrate by a spraying process, and an organometallic polymer is applied to the surface layer of the sprayed film. Baking is performed to seal the pores, and a plurality of electron beam control electrodes and an insulating layer around the through holes are provided on the surface of the organometallic polymer by a printing process.
【0016】[0016]
【作用】この技術的手段による作用は次のようになる。
請求項1および2によれば、湾曲基板は、ピンを取り付
けるスルーホールをパンチング方式によって穿設した金
属基板に電着プロセスによって絶縁膜を形成したため、
非常に緻密な絶縁膜が形成されるとともに、セラミック
基板などを用いなくとも、湾曲形成が容易で低コストな
湾曲基板を得ることができる。また電着プロセスで形成
した絶縁膜に、印刷プロセスで制御電極や、カソード支
持部材との間隙を保つ絶縁層をスルーホール周囲に形成
する際に、湾曲基板の外周縁側から内周縁側方向にパン
チング方式によってスルーホールを穿設することによっ
て、電着プロセスで発生するスルーホール部の絶縁膜の
膜厚のむらが湾曲基板の外周縁側でなくなる。The function of this technical means is as follows.
According to the first and second aspects, the curved substrate has the insulating film formed by the electrodeposition process on the metal substrate in which the through holes for mounting the pins are formed by the punching method.
In addition to forming a very dense insulating film, it is possible to obtain a curved substrate that can be easily curved and is low in cost without using a ceramic substrate or the like. In addition, when forming an insulating layer around the through hole on the insulating film formed by the electrodeposition process around the through hole in the printing process, a punching process is performed from the outer peripheral edge side to the inner peripheral edge side of the curved substrate. By forming the through hole by the method, the unevenness of the film thickness of the insulating film in the through hole portion generated in the electrodeposition process is eliminated on the outer peripheral edge side of the curved substrate.
【0017】他方、請求項3および4によれば、湾曲基
板への絶縁膜形成を溶射プロセスによって行なっている
ので、絶縁膜を形成したい面、すなわち印刷面のみに容
易に成膜できる。また溶射膜はほとんどの材料に対して
適用できるので、熱膨張係数の低い材料が選択できると
ともに、膜質が比較的ポーラスであるために熱膨張によ
る応力緩和が作用し、湾曲基板そのものの熱的変形が抑
えられる。またその表層部には加熱後にセラミック化す
る有機金属ポリマーを塗布することによってその絶縁性
が保たれるものである。On the other hand, according to the third and fourth aspects, since the insulating film is formed on the curved substrate by the thermal spraying process, the film can be easily formed only on the surface on which the insulating film is to be formed, that is, the printing surface. Also, since the thermal spray film can be applied to most materials, a material with a low coefficient of thermal expansion can be selected, and since the film quality is relatively porous, stress relaxation due to thermal expansion acts, causing thermal deformation of the curved substrate itself. Can be suppressed. The surface layer is coated with an organometallic polymer which becomes ceramic after being heated, so that its insulating property is maintained.
【0018】[0018]
【実施例】以下、本発明の一実施例の電子ビーム発生装
置について、図面を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An electron beam generator according to an embodiment of the present invention will be described below with reference to the drawings.
【0019】図1は本発明の電子ビーム発生装置の一実
施例の断面図であり、図2は図1のA部詳細を示す。図
において30は湾曲基板であり所定の湾曲形状に形成され
ており、その湾曲形状を保つようにリブ31が複数本金具
32により湾曲基板30の裏面に固定されている。湾曲基板
30には図1および図2の33に示されるようにスルーホー
ルが設けられている。また湾曲基板30の両面(但し、表
面だけでもよい)には図2に示すような絶縁膜34が所定
の厚みで成膜されており、その絶縁膜34上には電子ビー
ム制御電極35が所定幅、ピッチで印刷プロセスにより形
成されている。またスルーホール33の周囲には所定の厚
みが確保されて絶縁層36が形成されており、適当な厚み
ギャップに制御されて、カソード支持部材37が積層され
ている。カソード支持部材37は金属基板37A に絶縁膜37
B が形成され、前記電子ビーム制御電極35の位置に対応
する部分が開口しており、そのカソード支持部材37に電
子ビーム放出用の線状カソード38が当設して支持されて
いる。またその上部にはこれらの構成要素を積層支持す
る部材39が設けられており、その部材39に設けられたピ
ン40がスルーホール33を貫挿して、湾曲基板30の裏面で
ファスナー41により固定されている。この時、部材39は
線状カソード38から放出された電子ビームを集束、偏向
させるための電極でもある。FIG. 1 is a sectional view of an embodiment of the electron beam generator according to the present invention, and FIG. 2 shows the details of the portion A in FIG. In the figure, reference numeral 30 denotes a curved substrate, which is formed in a predetermined curved shape, and a plurality of ribs 31 are provided to keep the curved shape.
It is fixed to the back surface of the curved substrate 30 by 32. Curved board
Through holes are provided in 30 as shown at 33 in FIGS. 1 and 2. In addition, an insulating film 34 as shown in FIG. 2 is formed to a predetermined thickness on both surfaces of the curved substrate 30 (but only the front surface), and an electron beam control electrode 35 is formed on the insulating film 34 to a predetermined thickness. The width and pitch are formed by a printing process. An insulating layer 36 is formed around the through hole 33 so as to have a predetermined thickness, and a cathode support member 37 is laminated while being controlled to have an appropriate thickness gap. The cathode support member 37 includes an insulating film 37 on a metal substrate 37A.
B is formed, a portion corresponding to the position of the electron beam control electrode 35 is opened, and a linear cathode 38 for electron beam emission is provided and supported by the cathode support member 37. A member 39 for laminating and supporting these constituent elements is provided on the upper part thereof, and a pin 40 provided on the member 39 is inserted through the through hole 33 and fixed by a fastener 41 on the back surface of the curved substrate 30. ing. At this time, the member 39 is also an electrode for focusing and deflecting the electron beam emitted from the linear cathode 38.
【0020】このように構成された電子ビーム発生装置
においてその作用様態を説明する。従来例と同様に線状
カソード38を約650 ℃に加熱すると、そこから熱電子が
放出し、湾曲基板30の電子ビーム制御電極35への印加電
圧のon−offによって電子ビームの前方(図1で上
部方向)への放出を制御するものである。全体的にこの
ような構成とすることにより、大型化しても線状カソー
ド38は振動することなく安定した電子ビーム放出が可能
となる。The mode of operation of the electron beam generator thus constructed will be described. When the linear cathode 38 is heated to about 650 ° C. as in the conventional example, thermoelectrons are emitted from the linear cathode 38, and the on-off of the voltage applied to the electron beam control electrode 35 of the curved substrate 30 causes the front of the electron beam (see FIG. 1). It controls the release in the upper direction). By adopting such a configuration as a whole, the linear cathode 38 can stably emit an electron beam without vibrating even when the size is increased.
【0021】なお、このような構成において重要な点は
次のようなことである。すなわち全面全領域にわたっ
て、均一な電子ビームの放出であること、また放出され
た電子ビームが蛍光面(図示せず)に均一に制御された
形で照射されることである。そのためにはこの電子ビー
ム発生装置の構成として次のことが必要である。すなわ
ち電子ビームの前方への放出を電子ビーム制御電極35へ
の印加電圧で制御しているために、図1で示す電子ビー
ム制御電極35面と線状カソード38との距離Dが全面にわ
たって均一性を保つことが必要である。また第2点目は
このような加熱源を多数有する構成であるためそれらが
熱的に変形を少なくする構成であることが必要である。The important points in such a configuration are as follows. That is, the emission of the electron beam is uniform over the entire area of the entire surface, and the emitted electron beam is applied to the fluorescent screen (not shown) in a uniformly controlled manner. For that purpose, the following is required as the configuration of this electron beam generator. That is, since the forward emission of the electron beam is controlled by the voltage applied to the electron beam control electrode 35, the distance D between the surface of the electron beam control electrode 35 and the linear cathode 38 shown in FIG. It is necessary to keep The second point is that the structure has a large number of such heat sources, and therefore it is necessary that they are thermally reduced in deformation.
【0022】次に、本発明の湾曲基板30の製作方法を説
明する。本発明では図3に示すごとく、薄板金属基板42
へのスルーホール43の形成をパンチングによって形成す
る。すなわち、パンチング時の雄型44と雌型45の切断作
用によりスルーホール部43が形成されるが、そのとき端
部形状は湾曲基板30の外周縁側では図のようにコーナに
アールが形成され、内周縁側では凸状の形状となる。こ
のような形状面に前述の電着プロセスによって成膜する
と、雌型45面では膜厚過多領域46が発生するが、雄型44
面では略アール形状部47の滑らかな成膜が実現され、か
つそのアール形状部47の領域H2は1mm程度と小さく、
エッチング時と比較して非常に小さいものであり、雄型
44面側に印刷による絶縁層を形成すると厚みとパターン
精度が十分に確保され、画質不良が発生しなくなる。ま
たエッチングと違って基板42表面を荒すことが無いため
に、電着プロセス時に膜不良を発生することも無い。Next, a method of manufacturing the curved substrate 30 of the present invention will be described. In the present invention, as shown in FIG.
The through hole 43 is formed by punching. That is, the through hole portion 43 is formed by the cutting action of the male die 44 and the female die 45 at the time of punching, but at that time, the end shape is rounded at the corner as shown in the figure on the outer peripheral edge side of the curved substrate 30, The inner peripheral edge has a convex shape. When a film is formed on such a shaped surface by the above-described electrodeposition process, an excessive film thickness region 46 is generated on the female die 45 surface, but the male die 44 surface is formed.
On the surface, the smooth film formation of the substantially rounded portion 47 is realized, and the area H2 of the rounded portion 47 is as small as about 1 mm,
It is very small compared to the time of etching, and it is a male type
Forming an insulating layer by printing on the 44th surface ensures sufficient thickness and pattern accuracy, and prevents image quality defects. Further, unlike etching, the surface of the substrate 42 is not roughened, so that no film defect occurs during the electrodeposition process.
【0023】次に本発明の第2の実施例について図4を
用いて説明する。本発明の電子ビーム発生装置は前述し
たように、多数の加熱された線状カソード38を用いてい
るために、各構成部材に熱負荷が掛かり各部材は熱膨張
をする。このとき各部材としては熱膨張しても電子ビー
ムのランディングに変化が生じない構成とするか、もし
くは、熱膨張を最低限に抑えてランディングに影響のな
いようにする必要がある。特に本発明では湾曲基板30を
用いているので、その湾曲形状が変化しないようにする
ことが重要である。そこで電着プロセスによって湾曲基
板30に絶縁膜を形成する第1の実施例では金属基板42と
して低熱膨張係数の金属を用いたり、湾曲を維持させる
ためのリブ31の熱膨張係数を調整して湾曲変化を防止し
ていた。Next, a second embodiment of the present invention will be described with reference to FIG. As described above, the electron beam generator of the present invention uses a large number of heated linear cathodes 38, so that a thermal load is applied to each component and each component thermally expands. At this time, it is necessary for each member to have a structure in which the landing of the electron beam does not change even if it thermally expands, or to minimize the thermal expansion so that the landing is not affected. In particular, since the curved substrate 30 is used in the present invention, it is important to prevent the curved shape from changing. Therefore, in the first embodiment in which the insulating film is formed on the curved substrate 30 by the electrodeposition process, a metal having a low thermal expansion coefficient is used as the metal substrate 42, or the thermal expansion coefficient of the rib 31 for maintaining the curvature is adjusted to bend the metal. It was preventing change.
【0024】本発明の第2の実施例では次のように絶縁
膜の膜質に着目してその課題を解決するものである。す
なわち、熱の発生源は湾曲基板30の上部に位置している
のであるから、湾曲基板30への熱伝導を極力抑えるもの
である。図4で48は湾曲基板を構成する金属基板であ
り、第1の実施例と同様にスルーホールが設けられてい
る(図示せず)。本発明では溶射膜50を溶射プロセスに
よって成膜している。溶射プロセスとは、トーチ49によ
って粉末微粒子をある熱源で加熱溶融させ、それを高速
で基板48に吹き付け堆積させる手法であり、それ故、基
板48に堆積した溶射膜50は図のように、偏平化した粒子
の積層構造となり、なおかつ各粒子間には気孔51が存在
するものである。それ故、粒子として低熱伝導率の材料
を使う以上に膜としては低熱伝導膜となり、特に積層面
に対して垂直方向では低熱伝導率となる。In the second embodiment of the present invention, the problem is solved by focusing on the film quality of the insulating film as follows. That is, since the heat generation source is located above the curved substrate 30, heat conduction to the curved substrate 30 is suppressed as much as possible. In FIG. 4, reference numeral 48 denotes a metal substrate which constitutes a curved substrate, and through holes are provided (not shown) as in the first embodiment. In the present invention, the sprayed film 50 is formed by a spraying process. The thermal spraying process is a method in which fine powder particles are heated and melted by a torch 49 with a certain heat source and sprayed and deposited on the substrate 48 at a high speed.Therefore, the sprayed film 50 deposited on the substrate 48 is flat as shown in the figure. It has a laminated structure of atomized particles and has pores 51 between the particles. Therefore, the film becomes a low thermal conductive film as compared with the case where the material having a low thermal conductivity is used as the particles, and particularly the thermal conductivity becomes low in the direction perpendicular to the laminated surface.
【0025】しかしながら前述したように膜中に気孔51
が存在するために上面に導電性膜を印刷すると、その材
料が膜中を浸透して基板48と導通状態となりやすい。そ
こで本発明では図4(b) で示すように、溶射膜50の表層
部に有機金属ポリマー52を塗布し、それを加熱焼成する
ものである。このとき有機金属ポリマー52としては、焼
成後にセラミック化するチラノコートを用いている。こ
の処理によって上層部は溶射膜50の気孔51が封孔され、
図4(c) に示すように、その上に導電性材料よりなる電
子ビーム制御電極35を印刷プロセスによって形成して
も、金属基板48とは十分に絶縁が保たれるものである。However, as described above, pores 51 are formed in the film.
When a conductive film is printed on the upper surface due to the presence of the slag, the material easily penetrates into the film and becomes conductive with the substrate 48. Therefore, in the present invention, as shown in FIG. 4 (b), the organometallic polymer 52 is applied to the surface layer portion of the sprayed film 50 and heated and baked. At this time, as the organometallic polymer 52, a Tyranno coat that turns into a ceramic after firing is used. By this process, the upper layer portion is sealed with the pores 51 of the sprayed film 50,
As shown in FIG. 4 (c), even if the electron beam control electrode 35 made of a conductive material is formed thereon by a printing process, it is sufficiently insulated from the metal substrate 48.
【0026】このようにすることによって、金属基板48
への熱伝導が抑えられ、それ故基板48の熱膨張やその下
部にあるリブの熱膨張などに起因する湾曲変形が防止で
きて、画質不良が発生するランディング変化を抑制する
ことができる。また溶射材料としては低熱伝導率だけで
なく、膜自体の熱膨張をも小さくする材料の選択が可能
である。また膜横方向にも当然気孔が存在しているため
に、その方向への熱膨張によって発生する応力をも緩和
し、より基板48の変形が少ない方向に作用するものであ
る。By doing so, the metal substrate 48
Therefore, the heat conduction to the substrate can be suppressed, and therefore, the curving deformation due to the thermal expansion of the substrate 48 and the thermal expansion of the ribs therebelow can be prevented, and the landing change that causes the image quality defect can be suppressed. Further, as the thermal spray material, it is possible to select a material that not only has a low thermal conductivity but also a small thermal expansion of the film itself. Further, since pores naturally exist in the lateral direction of the film, the stress generated by the thermal expansion in that direction is also relaxed, and the substrate 48 acts in a direction in which the deformation is smaller.
【0027】本発明では第1の実施例と第2の実施例を
個別に説明しているが、その両者を合体させ電着プロセ
スで薄く絶縁膜を成膜した上に、溶射膜を設ける構成な
ども本発明の範疇に入ることは当然である。In the present invention, the first embodiment and the second embodiment are individually described. However, both are combined to form a thin insulating film by an electrodeposition process, and then a sprayed film is provided. It goes without saying that the above also falls within the scope of the present invention.
【0028】[0028]
【発明の効果】以上のように本発明によれば、湾曲基板
のスルーホールをパンチング方式によって形成した後、
電着プロセスで絶縁膜を形成し、印刷プロセスでカソー
ド支持部材との間隙を保つ絶縁層をスルーホール周囲に
形成する際に、カソードと制御電極間隙を全面で均一に
保持でき、均一な画像形成ができる。As described above, according to the present invention, after the through holes of the curved substrate are formed by the punching method,
When the insulating film is formed by the electrodeposition process and the insulating layer that keeps the gap with the cathode supporting member is formed around the through hole by the printing process, the gap between the cathode and the control electrode can be uniformly held over the entire surface, and a uniform image can be formed. You can
【0029】また湾曲基板への絶縁膜形成を溶射プロセ
スによって行なっているので、膜質がポーラスであるた
めに基板への熱伝導を抑制するとともに、熱膨張による
応力緩和が作用し、湾曲基板そのものの熱的変形が抑え
られる。またその表層部には加熱後にセラミック化する
有機金属ポリマーを塗布することによってその絶縁性が
保たれるものである。Further, since the insulating film is formed on the curved substrate by a thermal spraying process, since the film quality is porous, heat conduction to the substrate is suppressed, and stress relaxation due to thermal expansion acts so that the curved substrate itself is Thermal deformation is suppressed. The surface layer is coated with an organometallic polymer which becomes ceramic after being heated, so that its insulating property is maintained.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の第1実施例の電子ビーム発生装置の断
面図である。FIG. 1 is a sectional view of an electron beam generator according to a first embodiment of the present invention.
【図2】図1のA部詳細図である。FIG. 2 is a detailed view of part A of FIG.
【図3】湾曲基板への電着プロセスでの絶縁膜成膜概略
図である。FIG. 3 is a schematic view of forming an insulating film in an electrodeposition process on a curved substrate.
【図4】湾曲基板への溶射プロセスでの絶縁膜成膜概略
図である。FIG. 4 is a schematic view of forming an insulating film in a thermal spraying process on a curved substrate.
【図5】従来例における電子ビーム発生装置の概略図で
ある。FIG. 5 is a schematic view of an electron beam generator in a conventional example.
【図6】従来例における電子ビーム発生装置の概略図で
ある。FIG. 6 is a schematic view of an electron beam generator in a conventional example.
【図7】湾曲基板への電着プロセスでの絶縁膜成膜概略
図である。FIG. 7 is a schematic view of forming an insulating film in an electrodeposition process on a curved substrate.
【図8】電着成膜プロセス概念図である。FIG. 8 is a conceptual diagram of an electrodeposition film forming process.
30 湾曲基板 33 スルーホール 34 絶縁膜 35 電子ビーム制御電極 36 絶縁層 37 カソード支持部材 38 線状カソード 42 金属基板 43 スルーホール 46 膜厚過多領域 44 雄型 48 金属基板 50 溶射膜 51 気孔 52 有機金属ポリマー 30 Curved substrate 33 Through hole 34 Insulation film 35 Electron beam control electrode 36 Insulation layer 37 Cathode support member 38 Linear cathode 42 Metal substrate 43 Through hole 46 Over-thickness region 44 Male 48 Metal substrate 50 Sprayed film 51 Pore 52 Organic metal polymer
Claims (4)
ソードを当接・保持する線状カソード支持部材と、前記
線状カソードと前記線状カソード支持部材とを所定の湾
曲形状に保持する湾曲基板とを備えた電子ビーム発生装
置であって、前記湾曲基板は、金属基板にパンチング方
式によりスルーホールを設け、電着プロセスによって絶
縁膜を成膜した電子ビーム発生装置。1. A linear substrate, at least a linear cathode, a linear cathode support member that abuts and holds the linear cathode, and a curved substrate that holds the linear cathode and the linear cathode support member in a predetermined curved shape. An electron beam generator including: the curved substrate, wherein a through hole is provided in a metal substrate by a punching method, and an insulating film is formed by an electrodeposition process.
ソードを当接・保持する線状カソード支持部材と、前記
線状カソードと前記線状カソード支持部材とを所定の湾
曲形状に保持する湾曲基板とを備えた電子ビーム発生装
置の製造方法であって、前記湾曲基板は、金属基板にパ
ンチング方式により湾曲基板の外周縁側から内周縁側方
向にスルーホールを穿設した後、電着プロセスによって
絶縁膜を成膜し、湾曲基板の外周縁側の絶縁膜上に複数
の電子ビーム制御電極と、同じ絶縁膜上のスルーホール
の周囲に絶縁層とを印刷プロセスにより設けた電子ビー
ム発生装置の製造方法。2. A linear cathode, a linear cathode support member that abuts and holds the linear cathode, and a curved substrate that holds the linear cathode and the linear cathode support member in a predetermined curved shape. A method of manufacturing an electron beam generator comprising: a curved substrate, wherein a through hole is formed in a metal substrate from an outer peripheral side of the curved substrate toward an inner peripheral side by a punching method, and then the curved substrate is insulated by an electrodeposition process. A method of manufacturing an electron beam generator in which a film is formed, and a plurality of electron beam control electrodes are provided on an insulating film on the outer peripheral edge side of a curved substrate, and an insulating layer is provided around a through hole on the same insulating film by a printing process. ..
ソードを当接・保持する線状カソード支持部材と、前記
線状カソードと前記線状カソード支持部材とを所定の湾
曲形状に保持する湾曲基板とを備えた電子ビーム発生装
置であって、前記湾曲基板は、金属基板に溶射プロセス
によって溶射膜を成膜し、その溶射膜表層に、加熱後セ
ラミック化する有機金属ポリマー層を設けた電子ビーム
発生装置。3. A linear cathode, a linear cathode support member that abuts and holds the linear cathode, and a curved substrate that holds the linear cathode and the linear cathode support member in a predetermined curved shape. An electron beam generator comprising: a curved substrate, wherein the curved substrate is formed with a sprayed film on a metal substrate by a spraying process, and an organic metal polymer layer that is ceramicized after heating is provided on a surface layer of the sprayed film. Generator.
ソードを当接・保持する線状カソード支持部材と、前記
線状カソードと前記線状カソード支持部材とを所定の湾
曲形状に保持する湾曲基板とを備えた電子ビーム発生装
置の製造方法であって、前記湾曲基板は、金属基板に溶
射プロセスによって溶射膜を成膜した後、その溶射膜表
層に有機金属ポリマーを塗布焼成して気孔を封孔し、前
記有機金属ポリマー表面に複数の電子ビーム制御電極
と、前記スルーホールの周囲に絶縁層とを印刷プロセス
で設けた電子ビーム発生装置の製造方法。4. A linear substrate, at least a linear cathode, a linear cathode support member that abuts and holds the linear cathode, and a curved substrate that holds the linear cathode and the linear cathode support member in a predetermined curved shape. A method of manufacturing an electron beam generator comprising: a curved substrate, wherein after forming a sprayed film on a metal substrate by a spraying process, an organometallic polymer is applied to the surface layer of the sprayed film and baked to seal the pores. A method of manufacturing an electron beam generator, wherein a plurality of electron beam control electrodes, which are perforated, are provided on the surface of the organometallic polymer, and an insulating layer is provided around the through holes by a printing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33300591A JPH05166472A (en) | 1991-12-17 | 1991-12-17 | Electron beam generating device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33300591A JPH05166472A (en) | 1991-12-17 | 1991-12-17 | Electron beam generating device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05166472A true JPH05166472A (en) | 1993-07-02 |
Family
ID=18261224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33300591A Pending JPH05166472A (en) | 1991-12-17 | 1991-12-17 | Electron beam generating device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05166472A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433321C (en) * | 2005-07-29 | 2008-11-12 | 三洋电机株式会社 | Circuit board and circuit device using the same |
-
1991
- 1991-12-17 JP JP33300591A patent/JPH05166472A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433321C (en) * | 2005-07-29 | 2008-11-12 | 三洋电机株式会社 | Circuit board and circuit device using the same |
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