JPH0518906B2 - - Google Patents
Info
- Publication number
- JPH0518906B2 JPH0518906B2 JP8458384A JP8458384A JPH0518906B2 JP H0518906 B2 JPH0518906 B2 JP H0518906B2 JP 8458384 A JP8458384 A JP 8458384A JP 8458384 A JP8458384 A JP 8458384A JP H0518906 B2 JPH0518906 B2 JP H0518906B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- tungsten
- argon
- present
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 19
- 239000010937 tungsten Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- 238000010884 ion-beam technique Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 32
- 229910052786 argon Inorganic materials 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004157 plasmatron Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は電子デバイス製造プロセスのタングス
テンのデポジシヨン方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for depositing tungsten in an electronic device manufacturing process.
（従来技術とその問題点）
従来、タングステンのデポジシヨン方法は、直
流スパツタ、高周波スパツタ、マグネトロンスパ
ツタ、イオンビームスパツタというスパツタポジ
シヨン方法が主流となつていた。これらの基本原
理については、共立出版(株)、早川茂氏、和佐清孝
氏著の薄膜化技術に述べられている。これらの方
法はターゲツト材をイオン照射によりスパツタ
し、そのスパツタ物を試料にデポジシヨンするも
のである。この際、長時間使用することによりタ
ーゲツト材のエツチングの不均一性が増加し、デ
ポジシヨン膜の膜厚均一性に重大な問題となつて
いた。又、Si上にデポジシヨンし、シリサイド層
を形成するには制御性よくアニールする必要があ
る。さらに、電子デバイス製造プロセスのタング
ステンのパターンにタングステンを利用するため
には一度試料前面にタングステン膜を形成し、次
にP.Rによりマスクを形成したのち、タングステ
ンをエツチングしてタングステンパターンを形成
する工程を要し、プロセス工程が長くなるという
欠点を有していた。(Prior Art and Its Problems) Conventionally, sputter positioning methods such as DC sputtering, high-frequency sputtering, magnetron sputtering, and ion beam sputtering have been the mainstream methods for depositing tungsten. These basic principles are described in Thin Film Technology written by Shigeru Hayakawa and Kiyotaka Wasa, published by Kyoritsu Shuppan Co., Ltd. In these methods, a target material is sputtered by ion irradiation, and the sputtered material is deposited onto a sample. In this case, the non-uniformity of etching of the target material increases due to long-term use, which poses a serious problem in the uniformity of the thickness of the deposited film. Furthermore, in order to deposit on Si and form a silicide layer, it is necessary to perform annealing with good controllability. Furthermore, in order to use tungsten for tungsten patterns in the electronic device manufacturing process, a tungsten film is first formed on the front surface of the sample, then a mask is formed by PR, and the tungsten is etched to form a tungsten pattern. However, it has the disadvantage that the process steps are long.
（発明の目的）
本発明は、このような従来の欠点を除去せしめ
たタングステンのデポジシヨン方法あるいはマス
クレスのパターニング方法を提供することにあ
る。(Object of the Invention) An object of the present invention is to provide a tungsten deposition method or a maskless patterning method that eliminates the above-mentioned conventional drawbacks.
（発明の構成）
本発明は、WF6ガス雰囲気中に試料を置き、
同時に、イオンビームを照射することを特徴とす
るタングステンのデポジシヨン方法である。(Structure of the invention) The present invention places a sample in a WF 6 gas atmosphere,
This is a tungsten deposition method characterized by simultaneous irradiation with an ion beam.
（発明の原理と作用）
本発明は、上述の構成をとることにより、従来
の技術的問題点を解決した。本発明は真空排気可
能なチヤンバーにWF6ガスの導入口と、イオン
源とを設け、試料にWF6の分子又は解離原子を
吸着させ、同時にイオン照射するものである。す
ると、Ｗ（タングステン）はSi上にデポジシヨン
し、フツ素ガスは、気相中に排気される。そし
て、イオン照射が行なわれた部分のみデポジシヨ
ンがおこるため、試料上にタングステンの直接パ
ターニングが可能となる。(Principle and operation of the invention) The present invention solves the conventional technical problems by adopting the above-described configuration. In the present invention, a chamber that can be evacuated is provided with an inlet for WF 6 gas and an ion source, and molecules or dissociated atoms of WF 6 are adsorbed onto a sample, and ions are irradiated at the same time. Then, W (tungsten) is deposited on the Si, and the fluorine gas is exhausted into the gas phase. Since deposition occurs only in the ion-irradiated area, direct patterning of tungsten on the sample becomes possible.
（実施例）
以下、本発明の実施例について、図面を参照し
て詳細に説明する。第１図に本発明の第１の実施
例の構成図を示す。これは２インチSiウエフアー
への全面デポジシヨンの例である。WF6ガス導
入口１３およびアルゴンビームイオン源１２を備
えた真空チヤンバー１１中に試料１６を置く。ま
ず、ガス導入口１３より十分に真空排気した真空
チヤンバー１１へWF6を流入する。一方、アル
ゴンビームイオン源１２へアルゴンガスを導入し
放電させ、アルゴンイオンビーム１５を試料１６
へ照射する。この際、試料１６表面にはガス導入
口１３より導入されたWF6の分子又は解離した
原子１４が化学吸着している。なお、この本発明
の第１の実施例ではアルゴンイオンビーム電流密
度が1.5〔mA／cm2〕、加速エネルギー400〔eV〕で
あり、WF6ガス分圧は１×10-4〔Torr〕とした。
又、、試料１６は（100）10〜20Ω・cm，Si基板を
用いている。WF6が化学吸着した試料１６上へ
アルゴンイオンビーム１５が照射されると、
WF6の解離がおこる。このとき、ＷはSi上にデポ
ジシヨンし、フツ素はSiと結合し、SiF4もしくは
F2もしくは、再びWF6として気相中にだつ離し
てゆく。しかし、アルゴンイオンビーム１５の照
射があるので一部Si中あるいはデポジシヨンした
タングステン中に残留する。しかしこれはデポジ
シヨン後、アニールによつて除去できることはい
うまでもない。さらに、このイオン照射の効果
は、電子線等の照射と異なり試料への動重力エネ
ルギーの伝達があるため、Si上の最初の数十層は
ＷとSiとのまざりあつたシリサイドになつてお
り、Si基板との密着性がきわめてすぐれている。
以上第１の実施例でのデポジシヨンレイトは280
Å／min程度が得られた。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a configuration diagram of a first embodiment of the present invention. This is an example of full surface deposition on a 2 inch Si wafer. A sample 16 is placed in a vacuum chamber 11 equipped with a WF 6 gas inlet 13 and an argon beam ion source 12 . First, WF 6 is introduced into the vacuum chamber 11 which has been sufficiently evacuated through the gas inlet 13 . On the other hand, argon gas is introduced into the argon beam ion source 12 and discharged, and the argon ion beam 15 is transferred to the sample 16.
irradiate to. At this time, molecules of WF 6 or dissociated atoms 14 introduced through the gas inlet 13 are chemically adsorbed on the surface of the sample 16 . In the first embodiment of the present invention, the argon ion beam current density is 1.5 [mA/cm 2 ], the acceleration energy is 400 [eV], and the WF 6 gas partial pressure is 1×10 -4 [Torr]. did.
In addition, sample 16 uses a (100) 10 to 20 Ω·cm, Si substrate. When the argon ion beam 15 is irradiated onto the sample 16 on which WF 6 has been chemically adsorbed,
Dissociation of WF 6 occurs. At this time, W is deposited on Si, fluorine is combined with Si, and SiF 4 or
Release into the gas phase as F 2 or WF 6 again. However, since it is irradiated with the argon ion beam 15, some of it remains in the Si or deposited tungsten. However, it goes without saying that this can be removed by annealing after deposition. Furthermore, the effect of this ion irradiation is that, unlike irradiation with electron beams, etc., dynamic gravitational energy is transferred to the sample, so the first few tens of layers on Si become silicide, which is a mixture of W and Si. , has extremely good adhesion to the Si substrate.
The deposition rate in the first embodiment is 280.
About Å/min was obtained.
第２図は、本発明第２の実施例を示す構成図で
ある。この第２の実施例は、第１図第１の実施例
とは異なり、Siウエフアー上への部分的デポジシ
ヨンの例である。第１図と同様、WF6ガス導入
口２３および収束レンズ系をそなえたアルゴンビ
ームイオン源２２を備えた真空チヤンバー２１中
に試料２６を置く。ガス導入口２３より十分に真
空排気した真空チヤンバー２１へWF6を流入す
る。一方、アルゴンビームイオン源２２よりアル
ゴンイオンビーム２５を試料２６へ照射する。す
ると前記第１の実施例と同様の原理でＷがSi上に
デポジシヨンするが、第２の実施例ではアルゴン
ビームイオン源２２は、レンズ系で収束されてお
り、アルゴンイオンビーム２５を偏向できる偏向
電極２７により、そのビーム位置すなわち、Ｗを
デポジシヨンできる位置をSi上、いたるところに
変化できる。従つて、タングステンのパターニン
グがエツチング工程なしに直接可能となる。デポ
ジシヨンレイトとしては、第１図とほぼ同様の条
件下で230Å／minが得られた。 FIG. 2 is a configuration diagram showing a second embodiment of the present invention. This second embodiment differs from the first embodiment in FIG. 1 in that it is an example of partial deposition on a Si wafer. As in FIG. 1, a sample 26 is placed in a vacuum chamber 21 equipped with a WF 6 gas inlet 23 and an argon beam ion source 22 equipped with a converging lens system. WF 6 flows into the vacuum chamber 21 which has been sufficiently evacuated through the gas inlet 23 . On the other hand, the sample 26 is irradiated with an argon ion beam 25 from the argon beam ion source 22 . Then, W is deposited on the Si using the same principle as in the first embodiment, but in the second embodiment, the argon beam ion source 22 is focused by a lens system, and a deflector that can deflect the argon ion beam 25 is used. The electrode 27 allows the beam position, that is, the position where W can be deposited, to be varied anywhere on the Si. Therefore, tungsten can be patterned directly without an etching process. A deposition rate of 230 Å/min was obtained under almost the same conditions as shown in FIG.
なお、第１図、第２図の実施例では、それぞれ
イオン源としてカフマン型および、デユオブラズ
マトロン型を用いたが、いかなる方式のイオン源
でも本発明方法を実行できる。さらにイオンビー
ムにはいずれの実施例においてもアルゴンを用い
たが、He等のイオンでも可能であることはいう
までもない。しかし、型成後のＷ膜中の不純物、
あるいは、デポジシヨンレイト等を考慮すると不
活性ガス、特に、アルゴンの方が良い結果が得ら
れた。又、試料としてはSiを用いたが、SiO2等
のいかなる試料に対してもデポジシヨンレイトは
変化するが、本発明方法の実行は可能である。な
お、デポジシヨンレイトはイオン電流密度を増加
させれば増加する傾向にあつた。 In the embodiments shown in FIGS. 1 and 2, a Kafman type and a dual plasmatron type ion source were used, respectively, but the method of the present invention can be carried out using any type of ion source. Furthermore, although argon was used as the ion beam in all of the examples, it goes without saying that ions such as He or the like may also be used. However, impurities in the W film after mold formation,
Alternatively, in consideration of the deposition rate, etc., better results were obtained with inert gas, especially argon. Further, although Si was used as the sample, the method of the present invention can be performed with any sample such as SiO 2 , although the deposition rate will vary. Note that the deposition rate tended to increase as the ion current density increased.
（発明の効果）
本発明を用いることにより、試料との密着性の
よりＷ膜を得ることが可能である。しかも、従来
のターゲツト材のスパツタ方法と、基本的に異な
る原理のためSi上に形成した場合にはSi界面と、
Ｗとの間ではデポジシヨンするだけでシリサイド
層が型成される。そして、そのシリサイド層の厚
さはイオンエネルギーでコントロール可能であ
る。さらに従来デポジシヨン後、P.R.工程でマス
クを形成し、エツチングしてタングステンパター
ンを形成していたのが、本発明の原理を用いるこ
とにより、直接必要なタングステンパターンを試
料上に形成できる。従つて本発明は、電子デバイ
ス製造プロセスにおけるタングステンのデポジシ
ヨンあるいは、パターニングに重大なる効果をも
たらす。(Effects of the Invention) By using the present invention, it is possible to obtain a W film with improved adhesion to a sample. Moreover, since the principle is fundamentally different from the conventional sputtering method for target materials, when formed on Si, the Si interface
A silicide layer is formed between the tungsten and the tungsten by simply depositing it. The thickness of the silicide layer can be controlled by ion energy. Further, conventionally, after deposition, a mask was formed in a PR process and a tungsten pattern was formed by etching, but by using the principles of the present invention, the necessary tungsten pattern can be directly formed on the sample. Therefore, the present invention has significant effects on tungsten deposition or patterning in electronic device manufacturing processes.
第１図は、本発明の、第１の実施例を示す構成
図、第２図は第２の実施例を示す構成図である。
１１，２１……真空チヤンバー、１２，２２…
…アルゴンビームイオン源、１３、２３……ガス
導入口、１４，２４……WF6の分子又は解離し
た原子、１５，２５……アルゴンイオンビーム、
１６，２６……試料、２７……偏向電極。
FIG. 1 is a block diagram showing a first embodiment of the present invention, and FIG. 2 is a block diagram showing a second embodiment. 11, 21... vacuum chamber, 12, 22...
... Argon beam ion source, 13, 23 ... Gas inlet, 14, 24 ... WF 6 molecules or dissociated atoms, 15, 25 ... Argon ion beam,
16, 26... Sample, 27... Deflection electrode.
Claims (1)
ームを照射することを特徴とするタングステンの
デポジシヨン方法。1. A tungsten deposition method characterized by irradiating a sample placed in a WF6 atmosphere with an ion beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8458384A JPS60228675A (en) | 1984-04-26 | 1984-04-26 | Method for depositing tungsten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8458384A JPS60228675A (en) | 1984-04-26 | 1984-04-26 | Method for depositing tungsten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60228675A JPS60228675A (en) | 1985-11-13 |
| JPH0518906B2 true JPH0518906B2 (en) | 1993-03-15 |
Family
ID=13834692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8458384A Granted JPS60228675A (en) | 1984-04-26 | 1984-04-26 | Method for depositing tungsten |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60228675A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324033A (en) * | 1986-07-16 | 1988-02-01 | Nippon Kokan Kk <Nkk> | Method for manufacturing metal materials using chemical vapor deposition processing |
| JP2527292B2 (en) * | 1993-03-26 | 1996-08-21 | 株式会社日立製作所 | IC element and wiring connection method in IC element |
| JPH06283534A (en) * | 1993-03-26 | 1994-10-07 | Hitachi Ltd | Wiring connecting method in ic element |
| JP2527293B2 (en) * | 1993-03-26 | 1996-08-21 | 株式会社日立製作所 | Wiring connection method for IC element |
| JPH06302603A (en) * | 1993-03-26 | 1994-10-28 | Hitachi Ltd | IC element |
-
1984
- 1984-04-26 JP JP8458384A patent/JPS60228675A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60228675A (en) | 1985-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0697660B2 (en) | Thin film formation method | |
| US4278493A (en) | Method for cleaning surfaces by ion milling | |
| KR19980080768A (en) | Smooth Titanium Nitride Thin Films with Low Resistance | |
| JPS6354215B2 (en) | ||
| WO1989011553A1 (en) | Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams | |
| JPH0737887A (en) | Wiring forming method, wiring repairing method, and wiring pattern changing method | |
| JP2757546B2 (en) | Method and apparatus for etching Fe-containing material | |
| JPH0518906B2 (en) | ||
| JPH04240729A (en) | Pattern formation | |
| JPH05326380A (en) | Thin-film composition and mask for x-ray exposure using the same | |
| JPS63317676A (en) | Production of thin metallic compound film having non-grained structure | |
| JPS59170270A (en) | Apparatus for forming film | |
| JPH0543789B2 (en) | ||
| JP7488147B2 (en) | Hard mask and method for manufacturing the same | |
| JP2776807B2 (en) | Method for manufacturing semiconductor device | |
| JPH06295889A (en) | Formation of fine pattern | |
| AU7502098A (en) | Method of forming a silicon layer on a surface | |
| JP3926690B2 (en) | Gas cluster ion assisted oxide thin film formation method | |
| JPH0915831A (en) | Manufacturing method of exposure mask | |
| JP2625107B2 (en) | Manufacturing method of exposure mask | |
| JPS637364A (en) | Bias sputtering device | |
| JPH08115903A (en) | Method for manufacturing semiconductor device and plasma etching apparatus | |
| JP2603919B2 (en) | Method for producing boron nitride film containing cubic boron nitride crystal grains | |
| JPH06291063A (en) | Surface treatment equipment | |
| JPH0794413A (en) | Integrated circuit wiring method, hole or groove embedded wiring method in integrated circuit, and multi-chamber substrate processing apparatus |