JPH0519330Y2 - - Google Patents

Description

[Detailed description of the invention] [Field of industrial application] The present invention relates to a deposition substrate holder installed in a deposition tank. An air chamber is provided around the outer periphery of the deposition substrate, and air is sent from the outside through a pipe. After diffusing the gas in an air chamber,
The object of the present invention is to provide a new technical means that can effectively perform vapor deposition on a vapor deposition substrate by blowing out air at a substantially uniform pressure onto the surface of the vapor deposition substrate.

[Prior art]

The present inventor first used a vacuum evaporation tank with a well-known structure and injected oxygen gas onto the surface of the evaporation substrate in the tank from the vicinity to create a relatively high pressure oxygen atmosphere only in the vicinity of the evaporation substrate. Invented a method for producing a Y ₁ Ba ₂ Cu ₃ Ox thin film with a layered perovskite structure, which consists of simultaneously evaporating each metal such as Ba and Cu from separate evaporation sources and depositing it on the surface of a deposition substrate.
Patent application filed on September 21, 1986 (Patent application 1988-236793)
No.).

During vapor deposition in the above manufacturing method, it is necessary to maintain the surface of the vapor deposition substrate in a relatively high oxygen atmosphere because Cu is difficult to oxidize.
As shown in FIG. 7, gas pipes 7 are placed diagonally above the vapor deposition substrate 2 at two locations, and oxygen gas at a constant pressure is blown onto the surface of the vapor deposition substrate from these pipes.

[The problem that the idea aims to solve]

However, with the conventional means described above, there is no problem when the evaporation area is small, but when the evaporation area becomes large, it may be difficult to maintain the surface of the evaporation substrate in an oxygen atmosphere with a uniform pressure, and it may be difficult to maintain a uniform gas atmosphere. In order to ensure this, it is possible to install a large number of gas pipes radially and inject gas all at once into the center with uniform pressure, but this would not only be structurally complicated, but also There is also a problem in that it is difficult to send gas at uniform pressure to each of the large number of gas pipes.

The technical objective of the present invention is to solve the above problems.

[Means to solve the problem]

The problem is that the outer periphery of the evaporation substrate in the evaporation tank is
A technical means is provided in which the substrate is held by a ring-shaped holding member having a ring-shaped air chamber, and oxygen gas is blown out at a substantially uniform pressure from the inner periphery of the air chamber toward the surface of the deposition substrate. This can be solved by taking

That is, in the present invention, the outer periphery of the evaporation substrate is attached to the substrate holder by the inner periphery of the ring-shaped holding member that forms a circular or rectangular ring-shaped air chamber by coupling with the substrate holder provided in the evaporation tank. The surface of the evaporation substrate is fixed by pressing, and the gas introduced into the air chamber from the outside through a pipe is diffused in the air chamber, and the surface of the evaporation substrate is spread through the slit-shaped gap formed on the inner peripheral edge of the holding member. This is a evaporation substrate holder designed to emit air almost uniformly toward the evaporation substrate.

The air chamber may be formed integrally with the presser member, or may be formed by combining the ring-shaped frame and the presser member. Also,
Regarding the gap formed on the inner periphery of the air chamber, an independent gap forming piece may be interposed between the holding member and the vapor deposition substrate, or a plurality of gap forming pieces may be integrated on the lower surface of the holding member. It is also possible to set each interval (between the forming pieces) as the interval between the balloons.

The size of this blowout interval is determined by how much the pressure of the gas blown out onto the surface of the deposition substrate is reduced relative to the pressure of the gas sent in through the pipe, that is, the blowout pressure onto the surface of the deposition substrate. Various sizes may be prepared so that a variety of choices can be made.

Note that the ring shape of the holding member may be a circular ring, a rectangular ring, or a polygonal ring. moreover,
The number of gas pipes is not limited to one, and two to three gas pipes may be provided.

[Effect]

In this invention, as mentioned above, relatively high-pressure gas sent from the outside through one or several pipes is introduced into a large-volume air chamber and diffused, and then the inner circumference of the air chamber is Oxygen gas is blown out at a nearly uniform pressure from the slit-shaped space provided on the surface toward the surface of the deposition substrate placed in the center, so that the surface of the deposition substrate is almost uniform with no unevenness. An oxygen atmosphere is ensured and uniform vapor deposition is possible.

〔Example〕

Embodiment 1 FIG. 1 is a longitudinal cross-sectional side view of the vapor deposition substrate holder according to the present invention, showing the state where it is placed on a ring-shaped bracket 16 provided on the upper wall of the vacuum vapor deposition tank 15 shown in FIG. 6. 2 is a bottom view of FIG. 1.

Hereinafter, when fixing the evaporation substrate to the substrate holder, the evaporation substrate is fixed with the bottom surface of the substrate holder facing up, so the explanation will be given with the evaporation substrate viewed upside down.

In the figure, reference numeral 1 denotes a thick disk-shaped substrate holder with a built-in heater 8. A ring-shaped frame 4 having a vertical wall on the inner circumference is fixed to the upper surface of the holder by bolts. A gas pipe 7 is inserted into a part of the side surface from the outside. Reference numeral 2 denotes a vapor deposition substrate placed in the center, on the upper surface of which a masking plate 10 with an opening 9 provided in the vapor deposition area is stacked, and on the outer periphery of the upper surface there is a gap forming piece 6 as shown in FIG. By screwing the outer periphery of ring-shaped holding members 5, which are provided at equal pitches and have vapor deposition openings 11 from the top to the center, to the upper surface of the ring-shaped frame 4, At the same time, the masking plate 10 and the deposition substrate 2 are pressed and fixed onto the upper surface of the substrate holder 1, and at the same time, a ring-shaped air chamber 3 is formed by the inner circumference of the ring-shaped frame, the pressing member 5, and the substrate holder 1.

The shape of the ring-shaped holding member 5 is a plate having an inclined surface 12 with a large evaporation opening 11 at the center bottom as shown in the figure, so that the evaporation flow from below will not interfere as much as possible when it attaches to the evaporation substrate. Although the shape is adopted, it is not necessarily limited to this shape.

Furthermore, it goes without saying that a masking plate is not required for materials that do not require masking during vapor deposition.

Embodiment 2 The one shown in FIG.
As shown in the figure, this is a cross-sectional view when a large number (six pieces) are integrally formed radially with the gap forming pieces 6 on the lower surface of the thick ring body 13. 2 is placed on top of the ring body between the forming piece 6 and the vapor deposition substrate side, and a wide ring-shaped holding plate 14 is placed on top of the forming piece 6.
The vapor deposition substrate 2 is press-fixed by placing the holding plate so as to straddle both the ring-shaped frame 4 and the ring body 13 and fixing the outer peripheral part of the holding plate to the upper surface of the ring-shaped frame 4 with screws.

Embodiment 3 FIG. 5 shows a structure in which the ring-shaped frame 4, the pressing member 5, and the spacer forming piece 6 in the embodiment 1 are integrally formed, and the pressing surface that comes into contact with the vapor deposition substrate 2 is the fourth one. It has the same form as the figure. Therefore,
In this embodiment, after placing the evaporation substrate 2 in the center of the substrate holder 1, the evaporation substrate 2 is pressed and fixed by placing an integral presser member and fixing the outer circumference to the substrate holder 1 with screws. I can do it.

[Manner of use]

The evaporation tank 15 shown in FIG.
It is placed in the center of the upper bracket 16, a pipe leading to external oxygen gas is connected to the gas pipe 7, and power is also connected to the heater 8, the vapor deposition tank is sealed, and the inside of the tank is heated to 10 ^-6 by a vacuum pump. At the same time as creating a vacuum of about Torr, heat the substrate holder 1 to 500℃.
Then, oxygen gas is supplied to the pipe and the oxygen gas is uniformly blown onto the surface of the deposition substrate to a temperature of about 10 ^-2 to ^{10 -1} Torr. is continuously evacuated and the oxygen gas pressure in most of the deposition tank except near the deposition substrate is maintained at 10 ^-5 to ^{10 -3} Torr, and in this state crucible 1 is
The evaporated substances 18 of Cu, Y, Ba, etc. in 7 are evaporated by applying an electron beam, and are deposited on the surface of the evaporation substrate.

In the figure, reference numeral 19 is a shutter that momentarily closes when the amount of vapor deposition reaches a target value to prevent over-deposition.

The deposited film deposited on the single crystal substrate in this way is Y ₁ Ba ₂ Cu ₃ with a layered perovskite structure.
A single crystal thin film of Ox was formed and exhibited stable superconductivity.

[Effect of idea]

According to the present invention, when Cu is deposited in an oxygen atmosphere of uniform pressure formed by oxygen gas blown out through an air chamber, the crystal planes are oriented parallel to the deposited film surface, and Y and Ba A thin film having a provskite structure that forms a single crystal during vapor deposition can be obtained.

This single crystal thin film has an optimal crystal structure to achieve high current density when this thin film is used as a superconducting material.

[Brief explanation of the drawing]

Fig. 1 is a vertical side view of an example of the present invention, Fig. 2 is a bottom view of Fig. 1, Fig. 3 is a longitudinal side view of another embodiment of the present invention, and Fig. 4 is used for Fig. 3. FIG. 5 is a vertical sectional side view of still another embodiment of the present invention, FIG. 6 is a vertical sectional side view schematically showing a vapor deposition apparatus, and FIG. 7 is a conventional oxygen gas blowing mode. FIG. 1...substrate holder, 2...evaporation substrate, 3...
Air chamber, 4... Ring-shaped frame, 5... Pressing member, 6... Interval forming piece, 7... Gas pipe,
8... Heater, 9... Opening, 10... Masking plate, 11... Vapor deposition opening, 12... Inclined surface.

Claims (1)

[Claims for Utility Model Registration] 1. A ring-shaped air chamber 3 is formed between the substrate holder 1 and the substrate holder by fixing a ring-shaped holding member 5 to the center of the substrate holder 1 provided in the vapor deposition tank. The inner circumferential edge of the holding member presses and fixes the outer circumferential portion of the vapor deposition substrate 2 placed in the center of the substrate holder, and also directs gas from the inner circumferential portion of the air chamber toward the surface of the vapor deposition substrate. A evaporation substrate holder designed to blow out air with uniform pressure. 2. A ring-shaped frame 4 is provided on the upper surface of the substrate holder 1 provided in the vapor deposition tank, and the outer periphery of a ring-shaped holding member 5, which is wider than the ring-shaped frame, is fixed to the upper surface of the ring-shaped frame 4. An air chamber 3 is formed on the outer periphery of the evaporation substrate placed in the center, and the evaporation substrate is pressed and fixed via a spacer forming piece 6 between the holding member and the evaporation substrate at the inner periphery. The vapor deposition substrate holder is configured such that the gas introduced into the air chamber through the pipe 7 is blown out onto the surface of the vapor deposition substrate at a substantially uniform pressure. 3. The vapor deposition substrate holder according to claim 2, wherein the ring-shaped frame 4 and the ring-shaped holding member 5 are integrally formed. 4. The vapor deposition substrate holder according to claim 2, wherein the spacer forming piece 6 is provided integrally with the ring-shaped holding member 5.