JPH0519484B2 - - Google Patents

Info

Publication number
JPH0519484B2
JPH0519484B2 JP61014133A JP1413386A JPH0519484B2 JP H0519484 B2 JPH0519484 B2 JP H0519484B2 JP 61014133 A JP61014133 A JP 61014133A JP 1413386 A JP1413386 A JP 1413386A JP H0519484 B2 JPH0519484 B2 JP H0519484B2
Authority
JP
Japan
Prior art keywords
aluminum
aluminum nitride
plasma
powder
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61014133A
Other languages
Japanese (ja)
Other versions
JPS62171902A (en
Inventor
Kazuhiro Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1413386A priority Critical patent/JPS62171902A/en
Publication of JPS62171902A publication Critical patent/JPS62171902A/en
Publication of JPH0519484B2 publication Critical patent/JPH0519484B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0722Preparation by direct nitridation of aluminium
    • C01B21/0724Preparation by direct nitridation of aluminium using a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野) 本発明は高周波誘導熱プラズマを用い、アルゴ
ン、窒素、アンモニアおよびメタンを原料ガスと
して、金属アルミニウムを窒化および炭化するこ
とによる窒化アルミニウムと炭化アルミニウムよ
りなる混合微粉末の合成法に関するものである。 (従来の技術) 窒化アルミニウムは絶縁性に優れ、しかも熱伝
導性も良好であるため、近年電子回路の放熱基板
用材料として重要度が増している。 しかし、窒化アルミニウムは難焼結性物質であ
り、現在、1800℃以上で、しかもホツトプレス法
でしか十分緻密な焼結体が得られていない。この
問題を解決するには、原料の窒化アルミニウムを
0.3μm以下に微粉化することが必要である。そこ
で、本発明者らは高周波誘導熱プラズマを利用
し、原料に金属アルミニウム、アルゴン、窒素、
水素およびアンモニアを使用することにより、粒
径が0.1μm以下の窒化アルミニウム微粉末を合成
することに成功した。さらに、この窒化アルミニ
ウム微粉末は、従来より低温で焼結が可能であ
り、極めて実用価値の高いものである。 一方、熱伝導率を中心とした窒化アルミニウム
焼結体の特性は不純物、特に酸素の存在により著
しく低下することが知られている。窒化アルミニ
ウム粉末の表面は大気中の酸素や水分により酸化
物で覆われている。この酸化物が焼結中に窒化ア
ルミニウムと反応し、酸窒化物を生成するために
焼結体の特性が劣化する。従つて窒化アルミニウ
ム中の不純物酸素をいかに取り除くかが重要な課
題となつている。 従来、窒化アルミニウム中の酸素を取り除くた
めに、窒化アルミニウム粉末に数重量パーセント
の酸化イツトリウムや酸化カルシウム等の添加物
を混合し、窒化アルミニウム中の酸素を焼結中に
YAG(イツトリウムアルミニウムガーネツト)等
の形で粒界に析出させる方法がとられている。 (発明が解決しようとする問題点) 以上述べたような方法で焼結体中の酸窒化物の
生成を仰えることは可能であるが、窒化アルミニ
ウムと添加物を混合するという新たなプロセスが
入り、混合の際中に不純物が混入する恐れがあ
る。さらに、窒化アルミニウム粉末と添加物の粒
径が異なつている場合、十分均一に混合すること
が難しいばかりでなく、窒化アルミニウム粉末と
添加物との接触が十分でなく、必要量以上の添加
物を用いなければならないといつた問題がある。
不純物の存在が焼結体の特性を劣化させる点を考
えると、添加物の量は必要最小限の量におさえな
ければならない。 本発明の目的は以上のような添加物を用いる際
の欠点を除去し、窒化アルミニウムと添加物を高
周波誘導熱プラズマ法により同時に合成すること
によつて、同粒径の添加物が均一に混合された窒
化アルミニウムと炭化アルミニウムよりなる混合
微粉末の合成法を提供することにある。 (問題を解決するための手段) 本発明では、高周波誘導熱プラズマ法による窒
化アルミニウムの微粉末の合成法において、原料
として金属アルミニウム、アルゴン、窒素、水
素、アンモニアの他に、メタンを使用することに
より窒化アルミニウムと炭化アルミニウムの混合
微粉末を合成することを特徴としている。 (作用) 本発明においては、金属アルミニウムの窒化お
よび炭化がプラズマの高温領域で行なわれ、窒化
アルミニウムと炭化アルミニウムが気体状態で混
合されるため、同粒径でしかも均一に混じつた混
合微粉末を得ることができる。したがつて、焼結
前に添加物を混合するといつたプロセスが不必要
で、しかも、窒化アルミニウム粉末と添加物の粒
径の違いより生ずる問題も解決することができ
る。 (実施例) 次に本発明の実施例について説明する。 第1図は本発明に用いた高周波誘導熱プラズマ
装置である。石英製プラズマ発生管2および反応
容器9を排気装置12で排気した後、ガス供給口
4よりアルゴンガスを導入する。高周波コイル1
に高周波を流すと、アルゴンが無電極放電を起こ
し、プラズマフレーム5が発生する。プラズマが
発生したらガス混合器13により混合された窒
素、水素、アンモニアおよびメタンを混合ガス入
口8より導入する。 さらに金属アルミニウム粉末を原料供給口14
より投入する。本発明で使用した金属アルミニウ
ムおよびガスの条件は下記の通りである。 金属アルミニウム(99.9%、30メツシユ以下)
…5g/分 アルゴン(99.99%)…30/分 窒素(99.99%)…10/分 水素(99.99%)…5/分 アンモニア(99.99%)…15/分 メタン(99.99%)…0〜10/分 プラズマ中に投入されたアルミニウムは、プラ
ズマの高温により蒸発し、大部分は反応容器9内
で窒化され、また、一部はメタンにより炭化され
る。生成した窒化アルミニウムと炭化アルミニウ
ムは気相状態で混合され、排気装置11によつて
粉末捕集装置10に運ばれる間に凝縮、微粉末化
する。 得られた微粉末は、窒化アルミニウムと炭化ア
ルミニウムの混合粉末でその粒径はいずれも
0.2μm以下であつた。さらにその粉末を窒素気流
中、1400〜1800℃の温度で焼結したところ、いず
れも理論密度の90%以上に緻密化しており、ま
た、X線回折により焼結体中には第1表の丸印で
示した相が確認された。
(Industrial Application Field) The present invention uses high-frequency induction thermal plasma to synthesize a fine mixed powder of aluminum nitride and aluminum carbide by nitriding and carbonizing metal aluminum using argon, nitrogen, ammonia, and methane as raw material gases. It is about law. (Prior Art) Aluminum nitride has excellent insulating properties and good thermal conductivity, so it has become increasingly important as a material for heat dissipation substrates for electronic circuits in recent years. However, aluminum nitride is a material that is difficult to sinter, and at present, sufficiently dense sintered bodies can only be obtained at temperatures above 1800°C and by hot pressing. To solve this problem, the raw material aluminum nitride
It is necessary to micronize to 0.3 μm or less. Therefore, the present inventors used high-frequency induction thermal plasma to produce metal aluminum, argon, and nitrogen as raw materials.
By using hydrogen and ammonia, we succeeded in synthesizing fine aluminum nitride powder with a particle size of less than 0.1 μm. Furthermore, this fine aluminum nitride powder can be sintered at a lower temperature than before, and has extremely high practical value. On the other hand, it is known that the properties of aluminum nitride sintered bodies, including thermal conductivity, are significantly reduced by the presence of impurities, especially oxygen. The surface of aluminum nitride powder is covered with oxides due to oxygen and moisture in the atmosphere. This oxide reacts with aluminum nitride during sintering to produce oxynitride, which deteriorates the properties of the sintered body. Therefore, how to remove impurity oxygen from aluminum nitride has become an important issue. Conventionally, in order to remove oxygen from aluminum nitride, several weight percent of additives such as yttrium oxide and calcium oxide were mixed with aluminum nitride powder, and the oxygen in aluminum nitride was removed during sintering.
A method is used in which it is precipitated at grain boundaries in the form of YAG (yttrium aluminum garnet) or the like. (Problems to be solved by the invention) Although it is possible to generate oxynitrides in a sintered body using the method described above, a new process of mixing aluminum nitride and additives is possible. There is a risk that impurities may be mixed in during mixing. Furthermore, if the particle sizes of the aluminum nitride powder and additives are different, it is not only difficult to mix them uniformly, but also the contact between the aluminum nitride powder and the additives is insufficient, resulting in the addition of more than the necessary amount of additives. There is a problem that makes it necessary to use it.
Considering that the presence of impurities deteriorates the properties of the sintered body, the amount of additives must be kept to the minimum necessary amount. The purpose of the present invention is to eliminate the drawbacks of using additives as described above, and by simultaneously synthesizing aluminum nitride and additives by high-frequency induction thermal plasma method, additives with the same particle size can be uniformly mixed. An object of the present invention is to provide a method for synthesizing a mixed fine powder of aluminum nitride and aluminum carbide. (Means for Solving the Problem) The present invention uses methane in addition to metallic aluminum, argon, nitrogen, hydrogen, and ammonia as raw materials in a method for synthesizing fine powder of aluminum nitride by high-frequency induction thermal plasma method. This method is characterized by synthesizing a fine mixed powder of aluminum nitride and aluminum carbide. (Function) In the present invention, metal aluminum is nitrided and carburized in a high-temperature region of plasma, and aluminum nitride and aluminum carbide are mixed in a gaseous state. Obtainable. Therefore, processes such as mixing additives before sintering are unnecessary, and problems caused by the difference in particle size between aluminum nitride powder and additives can also be solved. (Example) Next, an example of the present invention will be described. FIG. 1 shows a high frequency induction thermal plasma device used in the present invention. After evacuating the quartz plasma generating tube 2 and the reaction vessel 9 using the exhaust device 12, argon gas is introduced through the gas supply port 4. High frequency coil 1
When a high frequency wave is applied to the argon, electrodeless discharge occurs in the argon, and a plasma flame 5 is generated. When plasma is generated, nitrogen, hydrogen, ammonia and methane mixed by the gas mixer 13 are introduced from the mixed gas inlet 8. Furthermore, metal aluminum powder is supplied to the raw material supply port 14.
Input more. The conditions for metal aluminum and gas used in the present invention are as follows. Metal aluminum (99.9%, 30 mesh or less)
…5g/min Argon (99.99%)…30/min Nitrogen (99.99%)…10/min Hydrogen (99.99%)…5/min Ammonia (99.99%)…15/min Methane (99.99%)…0 to 10/min The aluminum introduced into the plasma is evaporated by the high temperature of the plasma, most of it is nitrided in the reaction vessel 9, and some of it is carbonized by methane. The produced aluminum nitride and aluminum carbide are mixed in a gaseous state, and are condensed and pulverized while being conveyed to the powder collector 10 by the exhaust device 11. The obtained fine powder is a mixed powder of aluminum nitride and aluminum carbide, and its particle size is
It was 0.2 μm or less. Furthermore, when the powders were sintered at a temperature of 1400 to 1800°C in a nitrogen stream, they were densified to more than 90% of the theoretical density, and X-ray diffraction revealed that the sintered bodies contained The phase indicated by the circle was confirmed.

【表】 また、焼結体の熱伝導率は第1表および第2図
で示したように炭化アルミニウムの存在量が1重
量パーセント以上で急激に増大するが、10重量パ
ーセントを越えると逆に低下した。従つて混合微
粉末中に含まれる炭化アルミニウムは1.0〜10重
量パーセントの範囲が望ましい。 (発明の効果) 以上述べたように本発明によれば高周波誘導熱
プラズマ法を用いて、原料をアルミニウム、アル
ゴン、窒素、水素、アンモニアおよびメタンとす
ることにより炭化アルミニウム微粉末が均一に混
合された窒化アルミニウム微粉末が合成でき、従
来のような添加物の粒径および混合の問題が同時
に解決できるため、実用的価値は極めて大きい。
[Table] Also, as shown in Table 1 and Figure 2, the thermal conductivity of the sintered body increases rapidly when the amount of aluminum carbide is 1% by weight or more, but it reverses when the amount of aluminum carbide exceeds 10% by weight. decreased. Therefore, the aluminum carbide contained in the mixed fine powder is preferably in the range of 1.0 to 10 weight percent. (Effects of the Invention) As described above, according to the present invention, aluminum carbide fine powder can be uniformly mixed by using aluminum, argon, nitrogen, hydrogen, ammonia, and methane as raw materials using the high-frequency induction thermal plasma method. The practical value of this method is extremely great because it enables the synthesis of aluminum nitride fine powder and solves the conventional problems of particle size and mixing of additives at the same time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に用いた高周波誘導プラズマ装
置の概略図。第2図は、混合微粉末中に含まれる
炭化アルミニウムの割合と、その焼結体の熱伝導
率の関係を示す図である。 第1図において、1…高周波コイル、2…石英
製プラズマ発生管、3…冷却水入口、4…プラズ
マガス供給口、5…プラズマ発生部、6…水素ガ
ス入口、7…冷却水出口、8,8′…混合ガス入
口、9…反応容器、10…粉末捕集器、11…排
気装置、12…真空排気装置、13…ガス混合
器、14…原料供給口。
FIG. 1 is a schematic diagram of a high frequency induction plasma device used in the present invention. FIG. 2 is a diagram showing the relationship between the proportion of aluminum carbide contained in the mixed fine powder and the thermal conductivity of the sintered body thereof. In FIG. 1, 1...high frequency coil, 2...quartz plasma generation tube, 3...cooling water inlet, 4...plasma gas supply port, 5...plasma generation section, 6...hydrogen gas inlet, 7...cooling water outlet, 8 , 8'... Mixed gas inlet, 9... Reaction vessel, 10... Powder collector, 11... Exhaust device, 12... Vacuum exhaust device, 13... Gas mixer, 14... Raw material supply port.

Claims (1)

【特許請求の範囲】[Claims] 1 高周波誘導熱プラズマを用いる窒化アルミニ
ウムの合成法において、プラズマ発生用ガスとし
てアルゴンを、反応ガスとして窒素、水素、アン
モニア及びメタンの混合ガスを用い、アルミニウ
ム粉末をプラズマ中に導入することを特徴とする
窒化アルミニウムと炭化アルミニウムよりなる混
合微粉末の合成方法。
1. A method for synthesizing aluminum nitride using high-frequency induction thermal plasma, which uses argon as a plasma generation gas, a mixed gas of nitrogen, hydrogen, ammonia and methane as a reaction gas, and introduces aluminum powder into the plasma. A method for synthesizing a mixed fine powder of aluminum nitride and aluminum carbide.
JP1413386A 1986-01-24 1986-01-24 Synthesis of fine aluminum nitride powder Granted JPS62171902A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1413386A JPS62171902A (en) 1986-01-24 1986-01-24 Synthesis of fine aluminum nitride powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1413386A JPS62171902A (en) 1986-01-24 1986-01-24 Synthesis of fine aluminum nitride powder

Publications (2)

Publication Number Publication Date
JPS62171902A JPS62171902A (en) 1987-07-28
JPH0519484B2 true JPH0519484B2 (en) 1993-03-16

Family

ID=11852634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1413386A Granted JPS62171902A (en) 1986-01-24 1986-01-24 Synthesis of fine aluminum nitride powder

Country Status (1)

Country Link
JP (1) JPS62171902A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395103A (en) * 1986-10-03 1988-04-26 Nec Corp Readily sinterable aluminum nitride powder and production thereof
JPS63195102A (en) * 1987-02-09 1988-08-12 Showa Alum Corp Continuous production of aluminum nitride powder and device therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50160199A (en) * 1974-06-20 1975-12-25
IT1055884B (en) * 1976-02-17 1982-01-11 Montedison Spa PLASMA ARC PROCEDURE OF METALLIC AND SIMILAR CERAMIC PRODUCTS

Also Published As

Publication number Publication date
JPS62171902A (en) 1987-07-28

Similar Documents

Publication Publication Date Title
CN106882773A (en) A kind of method for preparing aluminium nitride
CN109763202B (en) Preparation method of aluminum nitride fiber
CN109437919B (en) Method for preparing aluminum nitride ceramic powder based on urea/melamine nitrogen source
CN1264781C (en) Method for synthesizing alpha-phase silicon nitride powder by temperature-controlled combustion
JPH09183662A (en) Aluminum nitride sintered body and method for producing aluminum nitride powder
JPH0519484B2 (en)
JP2003226580A (en) Aluminum nitride-based ceramic and member for producing semiconductor
JP2000103608A (en) Method for producing titanium nitride
JPS6278103A (en) Production of aluminum nitride powder
JPS62282635A (en) Production of mixture of ultra-fine aluminum nitride powder and ultra-fine oxidation-resistant aluminum powder
JPH021085B2 (en)
JPH0524850B2 (en)
JPS61201608A (en) Manufacture of high purity aluminum nitride powder
JPS6355108A (en) Aluminum nitride powder and production thereof
JP3839514B2 (en) Silicon nitride sintered body and method for producing the same
JPS62100403A (en) Production of fine powder of hexagonal boron nitride having high purity
JPS6395103A (en) Readily sinterable aluminum nitride powder and production thereof
JP4181359B2 (en) Aluminum nitride sintered body, manufacturing method thereof, and electrode built-in type susceptor using aluminum nitride sintered body
JPH0686286B2 (en) Manufacturing method of aluminum nitride
JPS5921577A (en) Method of sintering silicon carbide powder molded body
JPS6048446B2 (en) Method for manufacturing silicon nitride powder
CN121573993A (en) Aluminum nitride ceramic powder and its preparation method
JPS61227908A (en) Preparation of raw material powder for sintered silicon nitride
JPH0649566B2 (en) Method for synthesizing aluminum nitride
JPS62270468A (en) Aluminum nitride base sintered body