JPH051976B2 - - Google Patents
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- Publication number
- JPH051976B2 JPH051976B2 JP60153159A JP15315985A JPH051976B2 JP H051976 B2 JPH051976 B2 JP H051976B2 JP 60153159 A JP60153159 A JP 60153159A JP 15315985 A JP15315985 A JP 15315985A JP H051976 B2 JPH051976 B2 JP H051976B2
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- magnetic field
- processed
- electrical resistance
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Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、磁場を利用したプラズマ処理装置に
係わり、特に電極構造の改良をはかつたプラズマ
処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a plasma processing apparatus that utilizes a magnetic field, and particularly to a plasma processing apparatus that has an improved electrode structure.
近年、半導体ウエハ等の被処理物をエツチング
するものとして、放電プラズマを利用した各種の
エツチング装置が用いられている。さらに、被処
理物上に磁場を印加してマグネトロン放電を生起
することにより、エツチレートの向上をはかつた
エツチング装置も開発されている。
In recent years, various etching apparatuses that utilize discharge plasma have been used to etch objects to be processed such as semiconductor wafers. Furthermore, etching apparatuses have also been developed in which the etching rate is improved by applying a magnetic field to the object to be processed to generate magnetron discharge.
第５図にこの種の装置の概略構成を示す。図中
１０は真空処理室であり、この処理室１０内には
ガス導入管１１から所定のエツチングガスが供給
される。そして、処理室１０内のガスはガス排気
口１２から排気されるものとなつている。処理室
１０の底部には、絶縁環１３を介して電極２０が
設置されている。この電極２０は、内部に冷媒の
流路２８を備えたもので、その上面（表面側）に
載置される被処理物３０を冷却するものとなつて
いる。 FIG. 5 shows a schematic configuration of this type of device. In the figure, reference numeral 10 denotes a vacuum processing chamber, into which a predetermined etching gas is supplied from a gas introduction pipe 11. The gas within the processing chamber 10 is exhausted from the gas exhaust port 12. An electrode 20 is installed at the bottom of the processing chamber 10 with an insulating ring 13 interposed therebetween. This electrode 20 is provided with a refrigerant flow path 28 inside, and is designed to cool the object to be processed 30 placed on its upper surface (front surface side).
また、前記処理室１０の上壁１４は前記電極２
０の対向電極として作用するもので、該上壁１４
は接地されている。電極２０には、マツチング回
路４０を介して高周波電源５０が接続され、電極
２０に例えば13，56［MHz］の高周波電力が印加
される。また、電極２０の下方（裏面側）には、
前記被処理物３０の表面上に磁場を印加するため
の磁場発生器６０が配置されている。 Further, the upper wall 14 of the processing chamber 10 is connected to the electrode 2.
0, which acts as a counter electrode for the upper wall 14.
is grounded. A high frequency power source 50 is connected to the electrode 20 via a matching circuit 40, and high frequency power of, for example, 13.56 [MHz] is applied to the electrode 20. Further, below the electrode 20 (on the back side),
A magnetic field generator 60 is arranged to apply a magnetic field onto the surface of the object 30 to be processed.
上記構成のエツチング装置では、処理室１０内
にエツチングガスを導入すると共に、電極２０に
高周波電力を印加することにより、電極２０と上
壁１４との間にグロー放電が生起し、これにより
放電プラズマが生成される。さらに、磁場発生器
６０による磁場のためにマグネトロン放電が生起
されることになり、上記プラズマ密度は極めて高
いものとなる。そして、このプラズマ（例えばプ
ラズマ中のイオン）により、被処理物３０が高速
でエツチングされることになる。 In the etching apparatus configured as described above, by introducing etching gas into the processing chamber 10 and applying high frequency power to the electrode 20, a glow discharge is generated between the electrode 20 and the upper wall 14, and thereby a discharge plasma is generated. is generated. Furthermore, magnetron discharge is generated due to the magnetic field generated by the magnetic field generator 60, and the plasma density becomes extremely high. The object to be processed 30 is then etched at high speed by this plasma (for example, ions in the plasma).
しかしながら、この種の装置にあつては次のよ
うな問題があつた。即ち、第６図ｃに示す如く電
極２０の内部に冷媒の流路２８が形成されている
ため、被処理物３０上に現われる磁界強度は同図
ｂに示す如き分布となる。このとき、被処理物３
０のエツチング均一性は、被処理物３０の直径の
範囲で磁界強度分布に対応し、磁界分布が増強さ
れた形となり、第６図ａに示す如き分布となる。 However, this type of device has the following problems. That is, since the coolant flow path 28 is formed inside the electrode 20 as shown in FIG. 6c, the magnetic field intensity appearing on the object 30 has a distribution as shown in FIG. 6b. At this time, the object to be processed 3
Etching uniformity of 0 corresponds to the magnetic field strength distribution within the diameter range of the object 30 to be processed, and the magnetic field distribution becomes enhanced, resulting in a distribution as shown in FIG. 6a.
エツチング装置におけるエツチング均一性は、
エツチング形状と並んで重要な問題である。磁場
を利用したエツチング装置においては、磁場発生
器６０により供給される磁場が均一であつたとし
ても、電極２０を介して被処理物３０の表面に現
われる磁界強度分布は第６図ｂに示す如くなり、
これは電極形状に起因する。即ち、電極２０は、
その内部に冷却のための空間である冷媒流路２８
を備えており、全体は銅等の同一材料で構成され
ている。従つて、磁場発生器６０の表面から、被
処理物３０の表面に至る間の電極構成材料の厚み
h1に被処理物面内Ｄにおいて差が生じることにな
る。冷媒流路２８の形成された部分は、他の部分
の電極構成材料の厚みh1に対して（h1−h2）と小
さくなり、これにより表面磁場が前記したように
不均一となる。そして、表面磁場の不均一性はエ
ツチング均一性の低下を招くことになる。さら
に、この不均一性は、磁場供給に移動磁界を用い
ると、電極材料内部に発生する渦電流により、よ
り一層激しくなると云う問題があつた。 Etching uniformity in etching equipment is
This is an important issue along with the etching shape. In an etching apparatus using a magnetic field, even if the magnetic field supplied by the magnetic field generator 60 is uniform, the magnetic field intensity distribution appearing on the surface of the workpiece 30 via the electrode 20 is as shown in FIG. 6b. Become,
This is due to the shape of the electrode. That is, the electrode 20 is
Refrigerant flow path 28 which is a space for cooling inside it
The entire structure is made of the same material such as copper. Therefore, the thickness of the electrode constituent material between the surface of the magnetic field generator 60 and the surface of the object to be processed 30
There will be a difference in h 1 in the plane D of the object to be processed. The portion where the coolant flow path 28 is formed is smaller than the thickness h 1 of the electrode constituent material in other portions by (h 1 −h 2 ), and as a result, the surface magnetic field becomes non-uniform as described above. The non-uniformity of the surface magnetic field leads to a decrease in etching uniformity. Furthermore, when a moving magnetic field is used to supply the magnetic field, there is a problem in that this non-uniformity becomes even more severe due to eddy currents generated inside the electrode material.
なお、上記の問題はエツチング装置に限らず、
スパツタリング装置、その他磁場を利用したプラ
ズマ処理装置について同様に言えることであり、
この種の装置では被処理物の表面に現われる磁場
の均一性を確保することが、その特性上極めて重
要であつた。 Note that the above problem is not limited to etching equipment.
The same can be said about sputtering equipment and other plasma processing equipment that uses magnetic fields.
In this type of apparatus, it is extremely important to ensure the uniformity of the magnetic field appearing on the surface of the object to be processed.
本発明は上記事情を考慮してなされたもので、
その目的とするところは、被処理物の表面に現わ
れる磁場の均一性の向上をはかり得、エツチング
やスパツタリング等の均一性の向上に寄与し得る
プラズマ処理装置を提供することにある。
The present invention was made in consideration of the above circumstances, and
The purpose is to provide a plasma processing apparatus that can improve the uniformity of the magnetic field appearing on the surface of the object to be processed, and can contribute to improving the uniformity of etching, sputtering, etc.
本発明の骨子は、電極構造の改良により、被処
理物の表面上に均一磁場を形成することにある。
The gist of the present invention is to form a uniform magnetic field on the surface of a workpiece by improving the electrode structure.
即ち本発明は、被処理物を収容する処理室と、
この処理室内に所定のガスを導入すると共に、該
処理室内のガスを排気する手段と、冷却機構が設
けられその表面側に上記被処理物を載置する電極
と、上記電極に高周波電力を印加する高周波電源
と、上記電極の裏面側から上記被処理物上に磁場
を印加する磁場発生器とを備えたプラズマ処理装
置において、前記電極の前記被処理物が載置され
る部分の電気抵抗に比較して大きい電気抵抗を有
する材料で前記冷却機構を形成したものである。 That is, the present invention includes a processing chamber that accommodates a workpiece;
A predetermined gas is introduced into the processing chamber, and a means for exhausting the gas in the processing chamber is provided, an electrode is provided with a cooling mechanism and the object to be processed is placed on the surface side thereof, and high frequency power is applied to the electrode. In a plasma processing apparatus equipped with a high-frequency power source that applies a magnetic field to the object to be processed from the back side of the electrode, the electrical resistance of the portion of the electrode on which the object to be processed is placed is The cooling mechanism is formed of a material having a relatively high electrical resistance.
本発明によれば、電極の被処理物が載置される
部分の電気抵抗に比較して大きい電気抵抗を有す
る材料で冷却機構を形成することによつて、被処
理物表面上に現われる磁場強度分布を均一化する
ことができる。具体的には、被処理物が載置され
る部分は熱伝導性が良い材料とし、冷媒流路等を
形成する部分は上記被処理物載置部分よりも電気
抵抗の大きい材料とすることにより、冷媒流路形
成部分の材料厚みによる被処理物表面磁場の変化
を少なくすることができる。従つて、エツチング
やスパツタリング等の均一性の向上をはかり得
る。
According to the present invention, the magnetic field strength appearing on the surface of the object to be processed is increased by forming the cooling mechanism with a material having a higher electrical resistance than the electrical resistance of the part of the electrode on which the object to be processed is placed. Distribution can be made uniform. Specifically, the part where the object to be processed is placed is made of a material with good thermal conductivity, and the part that forms the coolant flow path etc. is made of a material with higher electrical resistance than the part where the object to be processed is placed. , it is possible to reduce changes in the surface magnetic field of the processed object due to the material thickness of the coolant flow path forming portion. Therefore, it is possible to improve the uniformity of etching, sputtering, etc.
以下、本発明の詳細を図示の実施例によつて説
明する。
Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
ここでは、エツチング装置を例にとつて説明す
る。エツチング装置の基本的構成は前記第１図と
同様であり、本実施例がこれと異なる点は電極２
０の構成にある。即ち、本実施例に用いた電極２
０は、第１図に示す如く２種の材料で構成されて
いる。被処理物３０の載置される部分は第１の板
体２１で形成され、この板体２１は冷却効果等を
考慮して銅或いはアルミニウムを含む材料で形成
されている。また、冷却機構を形成する部分は、
上面に複数の溝（冷媒流路）２３を設けた第２の
板体２２で構成され、この板体２２は第１の板体
２１の下面に取着されている。なお、この取着に
は、溶接或いはロウ付け等の手法を用いればよ
い。また、第２の板体２２は、第１の板体２１を
形成する材料よりも電気抵抗の大きな材料、例え
ばステンレスやセラミツクス等で形成されてい
る。 Here, an etching apparatus will be explained as an example. The basic structure of the etching apparatus is the same as that shown in FIG.
0 configuration. That is, the electrode 2 used in this example
0 is composed of two types of materials as shown in FIG. The part on which the object to be processed 30 is placed is formed by a first plate 21, and this plate 21 is made of a material containing copper or aluminum in consideration of cooling effects and the like. In addition, the parts that form the cooling mechanism are
It is composed of a second plate 22 having a plurality of grooves (coolant channels) 23 on its upper surface, and this plate 22 is attached to the lower surface of the first plate 21 . Note that this attachment may be accomplished by welding, brazing, or the like. Further, the second plate 22 is made of a material having a higher electrical resistance than the material forming the first plate 21, such as stainless steel or ceramics.
かかる構造の電極においては、被処理物３０は
銅或いはアルミニウムからなる第１の板体２１に
直接接触し、その裏面から冷却水等の冷却用媒体
が熱を奪つてくれるので、被処理物３０の冷却効
果は損われない。さらに、磁場の均一性が電極全
体を銅等の単一材料で構成していた従来の電極に
対し大幅に向上される。即ち、移動磁界により発
生する渦電流は電極を構成する材料の電気抵抗に
よつて決まり、電気抵抗が小さい材料程渦電流が
大きく、この渦電流により被処理物の表面に現わ
れる磁場は小さくなる。そこで、電極２０をステ
ンレス、セラミツクス等の電気抵抗が大きく渦電
流の発生し難い材料で構成することにより、冷却
等の目的でその厚さに変化する部分があつても、
電極に対し一様な磁場が供給され、その結果被処
理物の表面には均一な磁場が現われる。 In an electrode with such a structure, the object to be processed 30 is in direct contact with the first plate 21 made of copper or aluminum, and a cooling medium such as cooling water removes heat from the back surface of the first plate 21, so that the object to be processed 30 The cooling effect is not impaired. Furthermore, the uniformity of the magnetic field is greatly improved compared to conventional electrodes in which the entire electrode is made of a single material such as copper. That is, the eddy current generated by the moving magnetic field is determined by the electrical resistance of the material constituting the electrode, and the lower the electrical resistance of the material, the larger the eddy current, and the smaller the magnetic field that appears on the surface of the object to be processed due to this eddy current. Therefore, by constructing the electrode 20 with a material such as stainless steel or ceramics that has high electrical resistance and does not easily generate eddy current, even if there is a part whose thickness changes for purposes such as cooling,
A uniform magnetic field is supplied to the electrodes, and as a result, a uniform magnetic field appears on the surface of the object to be treated.
ここで、磁場分布が均一化される理由について
第２図を参照して、更に詳しく説明する。まず、
第２図ｃに示す如く第１の板体２１の厚みをd5、
第２の板体２２の厚みをd6、溝２３の深さをh2と
する。磁場発生器６０による磁界は上記第１及び
第２の板体２１，２２を介して被処理物３０の表
面上に印加される。このとき、第１の板体２１の
電気抵抗は小さく、渦電流が大きくなり、この板
体２１の磁場強度に与える影響は大きい。ところ
が、第１の板体２１は均一な厚みであるから、こ
の板体２１により減少する磁場強度は面内均一で
ある。 Here, the reason why the magnetic field distribution is made uniform will be explained in more detail with reference to FIG. first,
As shown in FIG. 2c, the thickness of the first plate 21 is d 5 ,
Let the thickness of the second plate 22 be d 6 and the depth of the groove 23 be h 2 . A magnetic field from the magnetic field generator 60 is applied onto the surface of the object to be processed 30 via the first and second plates 21 and 22. At this time, the electrical resistance of the first plate 21 is small, the eddy current becomes large, and the influence on the magnetic field strength of this plate 21 is large. However, since the first plate 21 has a uniform thickness, the magnetic field strength reduced by this plate 21 is uniform within the plane.
一方、第２の板体２２には厚さd6の部分と厚さ
（d6−h2）の部分とがあり、この厚みの差は磁場
強度に影響を与える。ところが、第２の板体２２
は電気抵抗の大きい材料で形成されているので、
この板体２２を通ることによる磁界強度の低下は
極めて小さい。従つて、第１及び第２の板体２
１，２２を介して被処理物３０の表面上に印加さ
れる磁場の分布は、第２図ｂに示す如く略均一な
ものとなる。そして、磁場強度が均一化されるこ
とから、被処理物３０のエツチンク均一性も、第
２図ａに示す如く良好なものとなる。 On the other hand, the second plate 22 has a portion with a thickness d 6 and a portion with a thickness (d 6 −h 2 ), and the difference in thickness affects the magnetic field strength. However, the second plate 22
is made of a material with high electrical resistance, so
The decrease in magnetic field strength caused by passing through this plate 22 is extremely small. Therefore, the first and second plate bodies 2
The distribution of the magnetic field applied to the surface of the object to be processed 30 via the magnets 1 and 22 is approximately uniform as shown in FIG. 2b. Since the magnetic field strength is made uniform, the etching uniformity of the object 30 is also improved as shown in FIG. 2a.
かくして本実施例によれば、被処理物３０の表
面に均一な磁場を印加することができ、これによ
りエツチング速度の均一性向上をはかり得る。ま
た、従来装置に比して、電極構造を改良するのみ
の簡易な構成で実現できる等の利点がある。 Thus, according to this embodiment, a uniform magnetic field can be applied to the surface of the object 30 to be processed, thereby improving the uniformity of the etching rate. Further, compared to conventional devices, there is an advantage that it can be realized with a simple configuration by simply improving the electrode structure.
なお、本発明は上述した実施例に限定されるも
のではない。例えば、前記電極を構成する第１及
び第２の板体の取着手段としては、第３図に示す
如く第２の板体２２の上面にＯリング２４及びネ
ジ穴２５等を設け、各板体２１，２２をネジの締
結により一体化するようにしてもよい。また、電
極は２つの部材からなるものに限らず、第４図に
示す如く３つの部材で形成してもよい。即ち、第
２の板体２２の上面に凹部２６を形成し、この凹
部２６に冷却等の空間を形成するための流路分離
板２７を配置することも可能である。この場合も
含めて、第１の板体以外の部分の構造に制限はな
く、その材質が第１の板体に比して電気抵抗が大
きく渦電流が発生し難いものであればよい。ま
た、被処理物が載置される部分（第１の板体）と
しては、電気抵抗が小さく熱伝導性の良いものが
望ましい。また、実施例ではエツチング装置を例
にとり説明したが、本発明はエツチング装置に限
らずスパツタリング装置、さらに放電プラズマを
利用した各種の装置に適用することが可能であ
る。その他、本発明の要旨を逸脱しない範囲で、
種々変形して実施することができる。 Note that the present invention is not limited to the embodiments described above. For example, as a means for attaching the first and second plates constituting the electrode, as shown in FIG. The bodies 21 and 22 may be integrated by fastening screws. Furthermore, the electrode is not limited to two members, but may be formed of three members as shown in FIG. That is, it is also possible to form a recess 26 on the upper surface of the second plate 22 and arrange a flow path separation plate 27 in this recess 26 for forming a space for cooling, etc. In this case as well, there are no restrictions on the structure of the parts other than the first plate, as long as the material has a higher electrical resistance than the first plate and is less likely to generate eddy currents. Further, the portion (first plate) on which the object to be processed is placed is desirably one with low electrical resistance and good thermal conductivity. Furthermore, although the embodiments have been described using an etching apparatus as an example, the present invention is applicable not only to etching apparatuses but also to sputtering apparatuses and various other apparatuses that utilize discharge plasma. In addition, without departing from the gist of the present invention,
Various modifications can be made.
第１図は本発明の一実施例に使用した電極の概
略構成を示す断面図、第２図は上記電極を用いた
エツチング装置の作用を説明するための模式図、
第３図及び第４図はそれぞれ変形例を示す断面
図、第５図は従来のエツチング装置を示す概略構
成図、第６図は上記従来装置の問題点を説明する
ための模式図である。
１０……真空処理装置、２０……電極、２１…
…第１の板体、２２……第２の板体、２３……冷
媒流路、２４……Ｏリング、２５……ネジ穴、２
６……流路分離板、３０……被処理物、４０……
マツチング回路、５０……高周波電源、６０……
磁場発生器。
FIG. 1 is a sectional view showing a schematic configuration of an electrode used in an embodiment of the present invention, and FIG. 2 is a schematic diagram for explaining the operation of an etching apparatus using the above electrode.
FIGS. 3 and 4 are cross-sectional views showing modified examples, FIG. 5 is a schematic diagram showing a conventional etching apparatus, and FIG. 6 is a schematic diagram illustrating problems with the conventional etching apparatus. 10... Vacuum processing device, 20... Electrode, 21...
...First plate, 22...Second plate, 23...Refrigerant channel, 24...O ring, 25...Screw hole, 2
6... Channel separation plate, 30... Processed object, 40...
Matching circuit, 50... High frequency power supply, 60...
Magnetic field generator.
Claims (1)
に所定のガスを導入すると共に、該処理室内のガ
スを排気する手段と、冷却機構が設けられその表
面側に上記被処理物を載置する電極と、上記電極
に高周波電力を印加する高周波電源と、上記電極
の裏面側から上記被処理物上に磁場を印加する磁
場発生器とを備えたプラズマ処理装置において、
前記電極は、前記被処理物を載置する部分が一様
な厚みの電極材料で形成され、前記冷却機構を構
成する部分が上記電極材料の電気抵抗に比較して
大きい電気抵抗を有する材料で形成されているこ
とを特徴とするプラズマ処理装置。 ２ 前記電極は、前記被処理物が載置される第１
の板体と、冷媒流路が設けられ上記第１の板体の
裏面側に取着された第２の板体とから構成され、
第２の板体は第１の板体よりも電気抵抗の大きい
材料で形成されていることを特徴とする特許請求
の範囲第１項記載のプラズマ処理装置。 ３ 前記第１の板体は銅或いはアルミニウムで形
成され、前記第２の板体はステンレス鋼或いはセ
ラミツクスで形成されていることを特徴とする特
許請求の範囲第２項記載のプラズマ処理装置。[Scope of Claims] 1. A processing chamber for accommodating an object to be processed, a means for introducing a predetermined gas into the processing chamber and exhausting the gas in the processing chamber, and a cooling mechanism, the surface of which is provided with the above-mentioned A plasma processing apparatus including an electrode on which a workpiece is placed, a high-frequency power source that applies high-frequency power to the electrode, and a magnetic field generator that applies a magnetic field onto the workpiece from the back side of the electrode,
In the electrode, a portion on which the object to be processed is placed is formed of an electrode material having a uniform thickness, and a portion constituting the cooling mechanism is made of a material having an electrical resistance larger than that of the electrode material. A plasma processing apparatus characterized in that: 2 The electrode is a first electrode on which the object to be processed is placed.
and a second plate provided with a refrigerant flow path and attached to the back side of the first plate,
2. The plasma processing apparatus according to claim 1, wherein the second plate is made of a material having higher electrical resistance than the first plate. 3. The plasma processing apparatus according to claim 2, wherein the first plate is made of copper or aluminum, and the second plate is made of stainless steel or ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15315985A JPS6214431A (en) | 1985-07-11 | 1985-07-11 | Plasma treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15315985A JPS6214431A (en) | 1985-07-11 | 1985-07-11 | Plasma treating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6214431A JPS6214431A (en) | 1987-01-23 |
| JPH051976B2 true JPH051976B2 (en) | 1993-01-11 |
Family
ID=15556323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15315985A Granted JPS6214431A (en) | 1985-07-11 | 1985-07-11 | Plasma treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214431A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2633870B2 (en) * | 1987-10-21 | 1997-07-23 | 株式会社日立製作所 | Dry process equipment |
| JPH08319588A (en) * | 1996-06-17 | 1996-12-03 | Hitachi Ltd | Plasma etching equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5797616A (en) * | 1980-12-10 | 1982-06-17 | Anelva Corp | Base plate for vacuum equipment |
| JPS58206125A (en) * | 1982-05-26 | 1983-12-01 | Hitachi Ltd | Treating device for plasma |
-
1985
- 1985-07-11 JP JP15315985A patent/JPS6214431A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6214431A (en) | 1987-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |