JPH0519962Y2 - - Google Patents
Info
- Publication number
- JPH0519962Y2 JPH0519962Y2 JP4108886U JP4108886U JPH0519962Y2 JP H0519962 Y2 JPH0519962 Y2 JP H0519962Y2 JP 4108886 U JP4108886 U JP 4108886U JP 4108886 U JP4108886 U JP 4108886U JP H0519962 Y2 JPH0519962 Y2 JP H0519962Y2
- Authority
- JP
- Japan
- Prior art keywords
- insulating plate
- flat semiconductor
- molybdenum
- semiconductor device
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 230000008646 thermal stress Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Description
【考案の詳細な説明】
〔考案の属する技術分野〕
本考案は車両用等の大容量半導体変換装置の平
形半導体素子スタツクの構造に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to the structure of a flat semiconductor element stack for a large-capacity semiconductor conversion device for vehicles and the like.
大容量の平形半導体素子スタツクはできるだけ
冷却効果が良く素子の許容発熱損失を大にして小
形化するとともに、機械的振動および熱反応に耐
えて寿命の長いものであることがのぞましい。
It is desirable that a large-capacity flat semiconductor device stack has as good a cooling effect as possible, has a large allowable heat dissipation loss, is compact, and has a long life by being resistant to mechanical vibrations and thermal reactions.
従来の平形半導体素子スタツクは第２図に示す
ごとく、端子板２を両面に当接した平形半導体素
子１が、両面に銅の当板３を当接した焼結アルミ
ナ絶縁板４を介して冷却体５に当接され、冷却体
の反対側を絶縁座６を介して押圧するようにした
クランプ７によつて冷却体５に圧接されている。
焼結アルミナ絶縁板は高温に耐え、絶縁性も良好
で他の絶縁物に比して熱伝導性が良く強度も強い
ので耐振性を要求される車両用等の用途に適して
いる。 In the conventional flat semiconductor device stack, as shown in FIG. 2, a flat semiconductor device 1 with terminal plates 2 in contact with both sides is cooled via a sintered alumina insulating plate 4 with copper backing plates 3 in contact with both sides. It is pressed against the cooling body 5 by a clamp 7 which is brought into contact with the cooling body 5 and presses the opposite side of the cooling body through an insulating seat 6.
Sintered alumina insulating plates can withstand high temperatures, have good insulation properties, and have better thermal conductivity and strength than other insulators, making them suitable for applications such as vehicles that require vibration resistance.
しかしながらこの構造では通電時の半導体素子
の発熱によつて温度が上昇し、焼結アルミナ絶縁
板４、銅の当板３が熱膨張によつて外周方向に拡
大される。アルミナの線膨張係数が６×10-6であ
るのに対して銅のそれは16×10-6で銅の方が大き
く拡がろうとする。しかし両者はクランプ装置に
よつて圧接されており、大きな摩擦係数によつて
滑りが生じないので焼結アルミナ絶縁板４に大き
な熱応力がかかる。熱応力に耐えて破壊しないよ
うにするためには焼結アルミナ絶縁板４の厚みを
厚くしなければならなかつた。アルミナの熱伝導
率は金属に比べてはるかに低いので厚みを厚くす
ると熱抵抗が増大し、半導体素子の冷却効果が低
下するといつた欠点があつた。 However, in this structure, the temperature rises due to heat generation of the semiconductor element when energized, and the sintered alumina insulating plate 4 and the copper contact plate 3 are expanded in the outer circumferential direction due to thermal expansion. The coefficient of linear expansion of alumina is 6 x 10 -6 , while that of copper is 16 x 10 -6 , so copper tends to expand more. However, since both are pressed together by a clamping device, and slippage does not occur due to a large coefficient of friction, a large thermal stress is applied to the sintered alumina insulating plate 4. In order to withstand thermal stress and not break, the thickness of the sintered alumina insulating plate 4 had to be increased. Thermal conductivity of alumina is much lower than that of metals, so increasing the thickness increases thermal resistance and reduces the effectiveness of cooling semiconductor devices.
本考案は前記の欠点を除去し、冷却効果が良
く、しかも熱応力に耐えるようにした平形半導体
素子スタツクを提供することを目的とする。
SUMMARY OF THE INVENTION The object of the present invention is to eliminate the above-mentioned drawbacks and to provide a flat semiconductor device stack which has good cooling effect and is resistant to thermal stress.
本考案は平形半導体素子と冷却との間に介在さ
せる焼結アルミナ絶縁板の両面にアルミナと膨張
係数がほぼ等しいモリブデンの当板をしてアルミ
ナに熱応力がかからにようにしてアルミナの厚み
を薄くし、半導体素子の冷却性を向上させようと
するものである。
In this invention, a sintered alumina insulating plate interposed between a flat semiconductor element and a cooling element is coated with molybdenum plates on both sides of the sintered alumina insulating plate, which has an expansion coefficient almost equal to that of alumina, to prevent thermal stress from being applied to the alumina and reduce the thickness of the alumina. The aim is to make the semiconductor element thinner and improve the cooling performance of the semiconductor element.
第１図は本考案の実施例の平形半導体素子スタ
ツクを示すもので、第２図と同一符号で示すもの
は同一部品である。端子板２を両面に当接した平
形半導体素子１が、両面にモリブデンの当板８を
当接した焼結アルミナ絶縁板４を介して冷却体５
に当接され、冷却体の反対側を絶縁座６を介して
押圧するようにしたクランプ７によつて冷却体５
に圧接されている。アルミナ絶縁板の厚みは１mm
程度で、外周部はモリブデン当板８より突出させ
て沿面絶縁距離を大きくしている。モリブデン当
板の厚みは２〜３mmとしている。モリブデンは金
属で抗張力が大きく熱伝達率もアルミナよりはる
かに大きい。しかもモリブデンの線膨張係数は
4.9×10-6でアルミナのそれとほぼ等しい。した
がつて焼結アルミナ絶縁板４とモリブデン当板８
とは一体になつて熱膨張するのでアルミナ絶縁板
４には熱応力がほとんどかからず、絶縁板を薄く
することができる。モリブデン当板８と端子板２
或いは冷却体５との間には線膨張係数の違いによ
る熱応力が生じるが、モリブデンは抗張力が大き
く、しかも銅またはアルミとの間の摩擦係数が小
さいので両者の間に滑りを生じて熱応力を緩和し
て充分熱応力に耐える。
FIG. 1 shows a flat semiconductor device stack according to an embodiment of the present invention, and the same components as in FIG. 2 are designated by the same reference numerals. A flat semiconductor element 1 with terminal plates 2 in contact with both sides is connected to a cooling body 5 via a sintered alumina insulating plate 4 with molybdenum backing plates 8 in contact with both sides.
Cooling body 5
is pressed against. The thickness of the alumina insulation board is 1mm.
The outer peripheral portion is made to protrude from the molybdenum backing plate 8 to increase the creepage insulation distance. The thickness of the molybdenum backing plate is 2 to 3 mm. Molybdenum is a metal with high tensile strength and a much higher heat transfer coefficient than alumina. Moreover, the coefficient of linear expansion of molybdenum is
It is 4.9×10 -6 , which is almost equal to that of alumina. Therefore, the sintered alumina insulating plate 4 and the molybdenum backing plate 8
Since the alumina insulating plate 4 thermally expands together with the alumina insulating plate 4, almost no thermal stress is applied to the alumina insulating plate 4, and the insulating plate can be made thinner. Molybdenum contact plate 8 and terminal plate 2
Alternatively, thermal stress is generated between the cooling body 5 and the cooling body 5 due to the difference in coefficient of linear expansion, but since molybdenum has a high tensile strength and a low coefficient of friction with copper or aluminum, slipping occurs between the two, causing thermal stress. It can withstand thermal stress sufficiently.
本考案によれば平形半導体素子スタツクが熱応
力に耐えて冷却性が向上して許容発生損失を大と
することができるので小形軽量化、信頼性向上の
効果がある。
According to the present invention, the flat semiconductor element stack can withstand thermal stress, improve cooling performance, and increase allowable loss, resulting in smaller size, lighter weight, and improved reliability.
第１図は本考案の実施例の平形半導体素子スタ
ツクの部分正面図、第２図は従来の平形半導体素
子スタツクの部分正面図である。
１……平形半導体素子、２……端子板、４……
焼結アルミナ絶縁板、５……冷却体、６……絶縁
座、７……クランプ、８……モリブデン当板。
FIG. 1 is a partial front view of a flat semiconductor device stack according to an embodiment of the present invention, and FIG. 2 is a partial front view of a conventional flat semiconductor device stack. 1... Flat semiconductor element, 2... Terminal board, 4...
Sintered alumina insulating plate, 5... Cooling body, 6... Insulating seat, 7... Clamp, 8... Molybdenum backing plate.
Claims (1)
当接した焼結アルミナ絶縁板を介して冷却体に圧
接して形成したことを特徴とする平形半導体素子
スタツク。 1. A flat semiconductor device stack characterized in that a flat semiconductor device is formed by pressure contacting a cooling body through a sintered alumina insulating plate having a molybdenum backing plate in contact with both sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4108886U JPH0519962Y2 (en) | 1986-03-20 | 1986-03-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4108886U JPH0519962Y2 (en) | 1986-03-20 | 1986-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62154656U JPS62154656U (en) | 1987-10-01 |
| JPH0519962Y2 true JPH0519962Y2 (en) | 1993-05-25 |
Family
ID=30855765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4108886U Expired - Lifetime JPH0519962Y2 (en) | 1986-03-20 | 1986-03-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0519962Y2 (en) |
-
1986
- 1986-03-20 JP JP4108886U patent/JPH0519962Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62154656U (en) | 1987-10-01 |
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