JPH0519992B2 - - Google Patents

Info

Publication number
JPH0519992B2
JPH0519992B2 JP60101540A JP10154085A JPH0519992B2 JP H0519992 B2 JPH0519992 B2 JP H0519992B2 JP 60101540 A JP60101540 A JP 60101540A JP 10154085 A JP10154085 A JP 10154085A JP H0519992 B2 JPH0519992 B2 JP H0519992B2
Authority
JP
Japan
Prior art keywords
electrode layer
cell
electrode
layer
unit cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60101540A
Other languages
Japanese (ja)
Other versions
JPS61260681A (en
Inventor
Kenji Nakatani
Tetsuo Sato
Hiroshi Okaniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP60101540A priority Critical patent/JPS61260681A/en
Priority to US06/828,197 priority patent/US4697041A/en
Priority to FR868602039A priority patent/FR2577716B1/en
Priority to DE19863604894 priority patent/DE3604894A1/en
Publication of JPS61260681A publication Critical patent/JPS61260681A/en
Publication of JPH0519992B2 publication Critical patent/JPH0519992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Description

【発明の詳細な説明】 [利用分野] 本発明は絶縁性基板上に設けた、複数個のユニ
ツトセルが電気接続された集積型の非晶質太陽電
池及びその製造方法に関する。さらに詳しくは絶
縁性基板上に形成された第1電極層、非晶質半導
体層、第2電極層からなる複数ユニツトセルの互
いに隣接するユニツトセルの第1電極、第2電極
を順次電気接続して形成された接続部面積が小さ
く能動面積を大きくできる集積型の太陽電池及び
該非晶質太陽電池をレーザー光を用いたドライプ
ロセスで製造する製造方法に関する。 [従来技術] 非晶質シリコン半導体膜はシランガス等のグロ
ー放電分解法によつて、低い基板温度で広い面積
に均一に堆積でき、基板ガラス、高分子フイル
ム、セラミツク板、金属フオイル等の各種基板が
選択出来る為、太陽電池用半導体膜として広く研
究されている。非晶質シリコン太陽電池の基本構
造としては上記各種基板上に設けられた金属電極
層/非晶質シリコン半導体層/透明電極層の積層
構造が知られている。 非晶質シリコン層堆積の特徴を生かして、上記
基本構造の太陽電池セルを大面積に設ける事は容
易であるが、このままでは面積によらず最大出力
電圧は0.6〜5V程度であり電力用途に必要な100V
以上の出力電圧を得る事は出来ない。このような
実用的な電圧を得る為の集積化方法としては、
所定の小面積の太陽電池ユニツトセルを小面積基
板上に設けその後このユニツトセルを所定個直列
接続する方法、大面積基板に設けた大面積の太
陽電池を、エツチング等により基板をそこなう事
なく所定の小面積のユニツトセルに分割し、その
後ユニツトセルを所定個直列接続する方法、大
面積基板上にマスク等を用いて分割した状態で所
定の小面積のユニツトセルを堆積し、その後該ユ
ニツトセルを所定個直列接続する方法が知られて
いる。 これらの方法の中での方法は非晶質シリコン
層堆積の特徴を生かした大量生産方式に適さず、
又、直列接続する工程、モジユール化する工程が
複雑になる。の方法についてはレジスト塗布と
エツチングの組合わせによつて可能であるが、レ
ジスト塗布、露光、洗浄エツチング等の多数の工
程が必要であり安価に大量に太陽電池を製造する
のには適さない。の方法については、一般に金
属マスクを基板上に密着させて太陽電池構成層を
順次堆積する事が行なわれるが、大面積化の場
合、基板はマスクの熱膨張率の違いによつて各層
堆積時に基板とマスクの密着性が悪くなり各層で
の堆積成分の回り込みの生じる事が多く、良好な
分割パターンが得られない。又、該マスク堆積法
による分割の場合、マスクの位置合わせがむつか
しくその誤差を0.5mm程度以下に小さくする事は
むつかしい。 又上述の従来法で得られる集積型の非晶質太陽
電池はユニツトセルを接続するための接続部面積
が大きくなりそれだけ全体の能動面積が小さくな
り太陽電池全体としての面積効率が低下する問題
もあつた。 [発明の目的] 本発明は上述の欠点を解決せんとしてなされた
もので、面積効率の良い大面積絶縁性基板上で複
数個のユニツトセルが直列接続された大面積の集
積型の非晶質太陽電池及び該太陽電池を生産性良
くレーザー光を用いたドライプロセスで集積化し
て製造する製造方法を提供することを目的とす
る。 [発明の構成、作用] 上述の目的は以下の本発明により達成される。
すなわち、本発明は、絶縁性基板上に積層して設
けられた第1電極層、非晶質半導体層、第2電極
層とからなる分割された複数のユニツトセルを、
互いに隣接するユニツトセルの第1電極層と第2
電極層とを順次電気接続した非晶質太陽電池にお
いて、ユニツトセルに分割するレーザ光照法によ
り形成されたセル分割溝と、隣接するユニツトセ
ル間のセル分割溝に沿つてレーザ光照射法により
第2電極層を分割してセル分割溝との間に所定巾
の接続部を形成する電極分割溝と、セル分割溝及
び電極分割溝を閉鎖する電気絶縁性の樹脂よりな
る閉鎖樹脂層と、セル分割溝を跨いで設けられた
隣接するユニツトセルの一方のユニツトセルの第
2電極層と他方のユニツトセルの接続部とを電気
接続する接続電極層と、接続部にレーザ溶接によ
り形成された接続電極層と第1電極層とを電気接
続してユニツトセル間を電気接続する溶接部とを
備えたことを特徴とする非晶質太陽電池を第1発
明とし、第1発明の非晶質太陽電池の製造方法に
おいて、レーザスクライブ法及びレーザ溶接法に
より大面積の太陽電池セルをユニツトセルに分割
して電気接続し、集積化する以下の製造方法を第
2発明とするものである。 すなわち、第2発明は、絶縁性基板上に積層し
て設けられた第1電極層、非晶質シリコン層、第
2電極層とからなる分割された複数のユニツトセ
ルを、互いに隣接するユニツトセルの一方のユニ
ツトセルの第1電極層と他方のユニツトセルの第
2電極層とを順次電気接続した非晶質太陽電池の
製造方法において、前記絶縁性基板上に第1電極
層、非晶質シリコン層、第2電極層を順次積層し
た連続セルを形成した後、 (イ) 前記ユニツトセルに分割するセル分割パター
ンを第1のレーザ光で走査して連続セルの全層
を切断するユニツトセル分割溝を穿設し、ユニ
ツトセルに分割する工程。 (ロ) 接続するユニツトセル間のセル分割パターン
に沿つた接続部を形成する電極分割パターンを
第2のレーザ光で走査して前記第2電極層を切
断する電極分割溝を穿設して各ユニツトセルに
接続部を形成する工程、 (ハ) 前記セル分割溝及び電極分割溝を閉鎖する電
気絶縁性の樹脂よりなる閉鎖樹脂層を形成する
工程、 (ニ) 隣接するユニツトセル間のセル分割溝を跨い
で一方のユニツトセルの第2電極層と他方のユ
ニツトセルの接続部の第2電極層とを接続する
接続電極層を形成する工程、 (ホ) 接続部に第3のレーザ光を照射して接続部の
第1電極層と接続電極層とをレーザ溶接し、電
気接続する工程、 の各工程により、連続セルを複数のユニツトに
分割し、次いでユニツトセルを電気接続して、集
積化することを特徴とする非晶質太陽電池の製造
方法である。 上述の構成から明らかなように、本発明の第1
発明によれば、セル分割溝と電極分割溝で区分し
た接続部でレーザー溶接によりユニツトセル間を
接続しているので、接続部は非常に小面積で充分
な電気接続ができ、能動面積が大きい。換言すれ
ば面積効率の良い集積型の非晶質太陽電池が得ら
れる。特に収集電極を設けるものでは、そのバス
バー部を接続部とすることにより、接続のためだ
けの能動面積減少は殆どないものとなる。なお、
上述の本発明においては、接続するユニツトセル
間のセル分割溝に沿つて接続部を形成することが
肝要である。 このように、本発明の第1発明は面積効率の良
いもので、そのセル分割溝あるいは電極分割溝は
従来のマスク法等と異なりレーザ照射法により形
成されるので、以下の利点がある。 すなわち、前述したごとく、従来法では第1電
極、非晶質半導体層、第2電極層の各種構成層を
堆積するたびに各層を分割加工する工程が必要で
ある為、各層取扱い時に生じるダメージが多いが
レーザ光照射法により前記分割溝を形成する場合
には各種構成層を均一堆積させた後に分割加工で
きるのでパターン化に伴う取扱い時のダメージも
少なく歩留りも大幅に向上する。 なお、上述のレーザ照射法により所定パターン
に分割加工するに際し、レーザ光照射部分に前も
つてスクリーン印刷等による電気絶縁性の樹脂よ
りなるパターン樹脂層を形成する事により非晶質
シリコン層の結晶化によるリーク電流の増加及び
電極層成分の飛散による短絡点の発生を回避出
来、良好な電池性能を維持出来るとともに、長尺
大面積太陽電池への適用が容易で生産性向上が出
来る。又、ユニツトセルの電気接続に際し、スク
リーン印刷により接続電極を形成すると、大幅な
生産性向上と直列接続に必要な接続電極層を接続
部において狭い幅で安定に形成できるので、接続
部面積の減少により、太陽電池としての能動面積
の増加が得られる。 なお、本発明では、接続電極層の形成に先立ち
セル分割溝及び電極分割溝を電気絶縁性の樹脂か
らなる閉鎖樹脂層で閉じるので、スクリーン印刷
法等の膜形成法による接続電極層の形成時におけ
る分割溝を通しての接続電極層と第1電極層との
短絡事故が確実に防止でき、歩留りが向上して生
産上非常に有利である。又、分割溝の内部まで樹
脂を充填しておくと接続部の幅が狭くできると共
に歩留りも向上する。なお、閉鎖樹脂層の樹脂が
使用するレーザ光に対して不透明であると、この
点で更に有利である。 以下、本発明の非晶質太陽電池の構造及び製造
方法を第1図に基いて詳しく説明する。 本発明の電気絶縁性の基板1としては電気絶縁
材からなる全ての基板が適用でき、具体的には高
分子フイルム、セラミツク板、ガラス板あるいは
絶縁性層を表面に設けた金属フオイル等が使用出
来るが、好ましくはロールツーロール法によつて
構成層を順次長尺の走行する基板上に堆積出来、
大量生産に適した高分子フイルムが使用される。
高分子フイルムとしては、非晶質シリコン堆積に
必要な耐熱性を有する高分子フイルムならどれで
も良いが、好ましくは機械的特性面の優れたポリ
エチレンテレフタレート(PET)フイルム、ポ
リエチレンナフタレートフイルム、ポリイミドフ
イルムなどが用いられる。 そして第1図Aに示すごとく基板1の上に第1
電極層2及び光起電力層の非晶質半導体層3を均
一に堆積する。この第1の電極層2としては周知
の通り全体の構成に応じ透光性電極あるいは通常
の金属電極が用いられる。透光性電極としては公
知の各種金属酸化層あるいは金属薄層と誘電体層
の積層構造体が用いられる。金属電極層としては
A,Ag,Ti,W,Co,Cr,Ni、ニクロム、
ステンレスなどの単体金属、合金金属の単層膜あ
るいは多層膜が用いられる。好ましくは光反射能
が高く且つ非晶質半導体層との接合特性の良いA
/ステンレス層の積層構造膜が用いられる。な
お、この膜厚はその電気抵抗の低下及び機械的強
度の観点から0.3μm以上の厚みが望ましい。 この金属電極層2上に均一に設けられる非晶質
半導体層3は光起電力能を有する非晶質シリコン
層であれば、特に限定されないが、具体的には既
に公知のシランガス、ジシランガス等のグロー放
電分解を用いたプラズマCVD法を用いて形成さ
れたpin形の非晶質シリコン光起電力層等がある。
なお、かかる非晶質シリコン光起電力層として
は、pin/pin,pin/pin/pin 等の多層タンデ
ム構造はもちろんこと非晶質シリコンゲルマニウ
ム、非晶質シリコンカーバイトなどのナローバン
ドギヤツプあるいはワイドバンドギヤツプ非晶質
シリコン半導体層を適時用いる事も出来る。 次いで、得られる連続膜の非晶質太陽電池セル
をレーザー光照射法によりユニツトセルに分割
し、電気接続を可能にする為の電気絶縁性の樹脂
からなるパターン樹脂層4a,4bが第1図Bに
示すように非晶質半導体層3上に以下のように設
けられる。すなわちパターン樹脂層4a,4bは
非晶質半導体層3上に分割パターンにパターン化
してスクリーン印刷法等を用いて設けられる。な
お、第2図は大面積の連続セルから、10cm×10cm
の大きさでその内に3つのユニツトセルCを形成
し、直列接続した集積化モジユールMを作成する
時の分割パターンすなわちパターン樹脂層4a,
4bの1例を示すもので、本発明はこれに限定さ
れるものではないことは云うまでもない。又パタ
ーン樹脂層4a,4bは、その作用から第1と第
2の電極層の間に設ければ良く、本例に替えて第
1電極層2上に設け、次いで非晶質半導体層3を
設けても良い。 ところでパターン樹脂層4a,4bは、レーザ
光による分割加工後に分割面の短絡防止ができる
ようにレーザ光の分割幅より若干広い幅で設ける
必要がある。又、層の厚みは1μm以下では第1の
電極層2と後述の第2の電極層5間の短絡を防止
出来ず、又50μm以上では段差が生じ第2の電極
層5の堆積及び後工程での接続電極、収集電極の
形成に困難を生じる。 かかるパターン樹脂層4a,4bを形成する電
気絶縁性の樹脂層としてはエポキシ樹脂、ポリア
ミド樹脂、ポリイミド樹脂、ポリエステル樹脂等
も用いる事が出来る。パターン樹脂層4aと4b
とを同じ樹脂にすると生産面で都合が良い。な
お、前記界面に設けるに際しては、スクリーン印
刷法、コーテイング法等が適用できる。 又、パターン樹脂層4a,4bは分割に用いる
レーザー光に対して不透明であることが好まし
い。該樹脂層が不透明な場合には、レーザー光の
パワーの選択によりレーザー照射側のみの表層切
断とその反対側を含めた表裏層切断との選択切断
が出来る。 次に第2電極層5を第1図Cのごとく基板全面
に均一に堆積する。第2電極層5としては第1電
極層1が金属電極層の時には透明電極層が用いら
れ、第1電極層が透明電極層の時には金属電極層
が用いられる。かかる金属電極層、透明電極層と
しては第1電極層について前述したところのもの
がそのまま適用できる。 次いで、得られた連続膜の太陽電池セルをモジ
ユールM及びユニツトセルCにする為に所定のレ
ーザ光により第2図の分割パターンすなわちパタ
ーン樹脂層4a,4b上を走査し、分割溝6,7
を穿設する。レーザーとしては各構成層が吸収し
得る波長域の光のものなら良く、0.2〜2μmの波
長光のものが用いられるが、好ましくは現在工業
的にも広く利用されているYAGレーザーが使用
される。又、レーザ光パワーはパターン樹脂層4
aに沿つて金属電極層/非晶質シリコン層/絶縁
層/透明電極層の全層を切断してユニツトセルC
に分割するセル分割溝6を形成する場合並びにパ
ターン樹脂層4bに沿つて透明電極層のみを切断
して接続部Aを分割する電極分割溝7を形成する
場合に応じて最適パワーを選択して、分割加工さ
れる。 なお、第2図から明らかのように電極分割溝7
は、隣接するユニツトセルC間のセル分割溝6に
沿つてその間に第1電極層/非晶質半導体層/分
割された第2電極層の各層からなる接続部Aを形
成するように設けられる。接続部Aは該セル分割
溝6の全長に亘つて設ける必要はなく、この場合
電極分割溝7は、接続部Aの形状に応じ接続部A
を当該ユニツトセルCの第2電極層から切り離す
ように設けられる。 次いで第1図Eに示すごとくレーザ光照射によ
つて穿設されたセル分割溝6及び電極分割溝7に
電気絶縁性の樹脂がスクリーン印刷法、コーテイ
ング法等で充填されて、閉鎖樹脂層8が形成され
る。閉鎖樹脂層8を形成する電気絶縁性の樹脂に
は、前述のパターン樹脂層4a,4bの樹脂がそ
のまま適用できる。 ついで第2電極層5上に第3図に示されるごと
きパターンの収集電極9と接続電極層10,1
0′が第1図Fのようにセル分割溝6を跨いで隣
接するユニツトセルCの第2電極層5と接続部A
を接続するようにスクリーン印刷法によつて設け
られる。なお、本例では接続電極層10は収集電
極9のバスバーとなつている。該収集電極9、接
続電極層10,10′としてはAg,Au,Ni,
Cu,A,Crを主体とする金属層あるいはこれ
等金属を樹脂に分散させた導電性樹脂層等が用い
られる。もちろんこれら金属を真空蒸着法を用い
てパターン化して堆積する事も出来るが、これら
金属を樹脂中に分散させた導電性樹脂をスクリー
ン印刷法で設けた導電性樹脂層が、生産性などか
ら好ましい。接続電極層10,10′は第1図F
に示される様にレーザ光照射によつて全層分割さ
れたセル分割溝6と第2電極層5のみ分割された
電極分割溝7で挾まれた接続部Aに設けられる。
なお接続電極層10′は電流取り出し用電極とな
る。そして、接続部Aの第1電極層/非晶質半導
体層/第2電極層/接続電極層の積層体にレーザ
ー光を照射して該積層体を一旦溶融混合し、次い
で自然冷却等により凝固させるレーザ溶接によつ
て第1図Gに示すように第1電極層2と接続電極
層10,10′間にオーミツク接合のレーザ溶接
部11が形成され、隣接するユニツトセルCの第
1電極と第2電極が電気接続される。レーザ光は
接続電極層側から照射しても良いし、又絶縁性基
板がレーザ光に透明な場合は基板側から照射する
事を出来る。なお、適当数のスポツト溶接で十分
な電気接続が得られるので、溶接は接続部全面に
施す必要はない。 以上の様にして得られた集積型の非晶質太陽電
池は、周知のように樹脂等で封止し、製品化され
る。 以上の通り、本発明によれば、面積効率の良い
非晶質太陽電池が得られると共に、該非晶質太陽
電池を非晶質半導体層積層後のレーザ光照射法を
用いた加工プロセスのみで集積化でき、非常に歩
留り良く且つ生産性良く製造できるのである。特
に長尺の高分子フイルムを基板としロールツロー
ル法で上述の各工程を実施することが好ましい。
なお、以上の第2発明において各工程は各工程そ
れぞれ別にしても、又その中のいくつかを組合せ
て同時にしても良く、可能なものはその順序を変
えて良い。以下実施例をあげ、本発明を説明す
る。 [実施例] 電気絶縁性の基板1として100μm厚のポリエス
テルフイルム(PET)を用いた。まず該フイル
ム基板をDCマグネトロンスバツタ装置に装着し、
10-3torr台のAr雰囲気中でアルミニウム層(A
)0.4μm、及びステンレス層(SS)100Åを連
続して順次堆積し、第1電極層2として反射性の
良い金属電極層2を長尺フイルム基板1上に設け
た。 さらにこのPET/A/SS堆積体上に非晶質
半導体層3として非晶質シリコンのpin型の光起
電力層を特開昭59−34668号公報に開示されてい
るロールツーロール方式によつて長尺で大面積に
連続的に堆積した。 同一基板上で3直列に直列接続された集積型の
太陽電池モジユールを形成する為にパターン樹脂
層4a,4bとして第2図に示した基本パターン
で黒色絶縁性エポキシ樹脂をPET/A/SS/
非晶質半導体層上にスクリーン印刷法を用いて幅
2mm、厚さ12μmで設けた。なお、接続部Aの幅
は2mmとした。次に第2電極層5として酸化イン
ジユーム(ITO)層からなる透明電極層を電子ビ
ーム蒸着法を用いて600Å程度均一に堆積し、連
続セルを作製した。 次にQスイツチ式YAGレーザ光で第2図のパ
ターン樹脂層4a上を走査しA/SS/非晶質
シリコン/絶縁層/ITO層からなる連続セルを全
層切断し、第1図Dに示すセル分割溝6を穿設し
た。この時のQスイツチ周波数は2KHz、レーザ
光パルスの尖頭値パワーは2KW、走査速度32
mm/secであつた。さらにレーザ光尖頭値パワー
を200Wに低下させ他は同一条件で第2図の絶縁
層4bを走査し、前記セルの第2電極層5のITO
層のみを切断して、第1図Dに示す電極分割溝7
を穿設し、接続部Aを形成した。 ついで第1図Eに示すようにセル分割溝6及び
電極分割溝7を充填するようにその上にスクリー
ン印刷法により黒色エポキシ樹脂からなる閉鎖樹
脂層8を幅2mm、厚さ12μmで形成した。次いで、
第3図のパターンを持つた収集電極9及び接続電
極層10,10′をスクリーン印刷法を用いて次
のように形成した。すなわちポリエステル系Ag
導電樹脂をスクリーン印刷して乾燥する事によつ
て15μ厚みの収集電極9及び接続電極層10,1
0′を得た。次に接続電極層10,10′上に
2KWの尖頭値パワーを持つYAGレーザ光を断続
的に照射しながら走査する事によつて第1電極層
2と接続電極層10,10′間にオーミツク接続
のレーザ溶接部11を形成して3直列の集積型の
太陽電池モジユールを形成した。 このモジユールをAM−1,100mW/cm2のソ
ーラシユミレーター下で測定した結果、表1に示
した様な良好な電池特性が得られ本発明の有効性
が確認された。 【表】
DETAILED DESCRIPTION OF THE INVENTION [Field of Application] The present invention relates to an integrated amorphous solar cell provided on an insulating substrate, in which a plurality of unit cells are electrically connected, and a method for manufacturing the same. More specifically, it is formed by sequentially electrically connecting the first electrodes and second electrodes of adjacent unit cells of a plurality of unit cells formed on an insulating substrate, each consisting of a first electrode layer, an amorphous semiconductor layer, and a second electrode layer. The present invention relates to an integrated solar cell that has a small connection area and a large active area, and a manufacturing method for manufacturing the amorphous solar cell by a dry process using laser light. [Prior art] Amorphous silicon semiconductor films can be deposited uniformly over a wide area at low substrate temperatures by glow discharge decomposition using silane gas, etc., and can be applied to various substrates such as glass, polymer films, ceramic plates, and metal foils. Since it can be selected, it has been widely studied as a semiconductor film for solar cells. As a basic structure of an amorphous silicon solar cell, a laminated structure of a metal electrode layer/amorphous silicon semiconductor layer/transparent electrode layer provided on the above-mentioned various substrates is known. Taking advantage of the characteristics of amorphous silicon layer deposition, it is easy to install solar cells with the above basic structure over a large area, but as it is, the maximum output voltage is around 0.6 to 5 V regardless of the area, making it difficult for power applications. 100V required
It is not possible to obtain a higher output voltage. The integration method to obtain such a practical voltage is as follows.
A method in which solar battery unit cells of a predetermined small area are provided on a small area substrate and then a predetermined number of these unit cells are connected in series. A method in which unit cells of a predetermined small area are deposited on a large-area substrate in the divided state using a mask, etc., and then a predetermined number of unit cells are connected in series. method is known. Among these methods, these methods are not suitable for mass production methods that take advantage of the characteristics of amorphous silicon layer deposition;
Moreover, the process of connecting in series and the process of modularizing becomes complicated. Although this method is possible by combining resist coating and etching, it requires many steps such as resist coating, exposure, cleaning and etching, and is not suitable for manufacturing solar cells in large quantities at low cost. In this method, the solar cell constituent layers are generally deposited one after another by placing a metal mask in close contact with the substrate. However, in the case of large-area substrates, the substrate may have different thermal expansion coefficients during the deposition of each layer. Adhesion between the substrate and the mask deteriorates, often causing the deposited components to wrap around in each layer, making it impossible to obtain a good divided pattern. Furthermore, in the case of division by the mask deposition method, it is difficult to align the mask, and it is difficult to reduce the error to about 0.5 mm or less. In addition, the integrated amorphous solar cell obtained by the above-mentioned conventional method has the problem that the area of the connecting part for connecting the unit cells becomes large, which reduces the overall active area and reduces the area efficiency of the solar cell as a whole. Ta. [Objective of the Invention] The present invention has been made to solve the above-mentioned drawbacks, and provides a large-area integrated amorphous solar cell in which a plurality of unit cells are connected in series on a large-area insulating substrate with good area efficiency. It is an object of the present invention to provide a manufacturing method for integrating and manufacturing a battery and the solar cell by a dry process using laser light with good productivity. [Structure and operation of the invention] The above objects are achieved by the present invention as described below.
That is, the present invention provides a plurality of divided unit cells each consisting of a first electrode layer, an amorphous semiconductor layer, and a second electrode layer that are stacked on an insulating substrate.
The first electrode layer and the second electrode layer of unit cells adjacent to each other
In an amorphous solar cell in which electrode layers are sequentially electrically connected, a second electrode is formed along a cell dividing groove formed by a laser beam irradiation method to divide the cell into unit cells and a cell dividing groove between adjacent unit cells by a laser beam irradiation method. An electrode dividing groove that divides the layer to form a connection part of a predetermined width between the cell dividing groove, a closing resin layer made of electrically insulating resin that closes the cell dividing groove and the electrode dividing groove, and a cell dividing groove. A connecting electrode layer that electrically connects the second electrode layer of one of the adjacent unit cells and the connecting part of the other unit cell, which is provided across the connecting part, and a connecting electrode layer formed by laser welding on the connecting part and the first connecting electrode layer. A first invention is an amorphous solar cell characterized by comprising a welding part for electrically connecting an electrode layer and electrically connecting unit cells, and a method for manufacturing an amorphous solar cell according to the first invention, The second invention is the following manufacturing method in which a large-area solar cell is divided into unit cells, electrically connected, and integrated by laser scribing and laser welding. That is, in the second invention, a plurality of divided unit cells each consisting of a first electrode layer, an amorphous silicon layer, and a second electrode layer provided in a stacked manner on an insulating substrate are connected to one of the adjacent unit cells. In the method for manufacturing an amorphous solar cell in which the first electrode layer of one unit cell and the second electrode layer of the other unit cell are sequentially electrically connected, the first electrode layer, the amorphous silicon layer, and the second electrode layer are formed on the insulating substrate. After forming a continuous cell in which two electrode layers are sequentially laminated, (a) scanning the cell division pattern to be divided into unit cells with a first laser beam to form a unit cell dividing groove for cutting all layers of the continuous cell; , the process of dividing into unit cells. (b) A second laser beam scans an electrode division pattern that forms a connection part along the cell division pattern between unit cells to be connected, and creates an electrode division groove for cutting the second electrode layer to form each unit cell. (c) forming a closing resin layer made of electrically insulating resin to close the cell dividing groove and the electrode dividing groove; (d) straddling the cell dividing groove between adjacent unit cells; (e) forming a connection electrode layer that connects the second electrode layer of one unit cell and the second electrode layer of the connection part of the other unit cell; (e) irradiating the connection part with a third laser beam to form the connection part; A continuous cell is divided into a plurality of units by the steps of laser welding and electrically connecting the first electrode layer and the connecting electrode layer, and then the unit cells are electrically connected and integrated. This is a method for manufacturing an amorphous solar cell. As is clear from the above configuration, the first aspect of the present invention
According to the invention, since the unit cells are connected by laser welding at the connecting portion separated by the cell dividing groove and the electrode dividing groove, sufficient electrical connection can be made in a very small area of the connecting portion, and the active area is large. In other words, an integrated amorphous solar cell with good area efficiency can be obtained. In particular, in the case where a collector electrode is provided, by using the bus bar portion as the connection portion, there is almost no reduction in the active area due to the connection. In addition,
In the above-described invention, it is important to form the connecting portions along the cell dividing grooves between the unit cells to be connected. As described above, the first aspect of the present invention has good area efficiency, and the cell division grooves or electrode division grooves are formed by a laser irradiation method, unlike the conventional mask method, and therefore has the following advantages. In other words, as mentioned above, in the conventional method, each time the various constituent layers of the first electrode, the amorphous semiconductor layer, and the second electrode layer are deposited, it is necessary to perform a process of dividing each layer, which reduces the damage caused when handling each layer. In most cases, when the dividing grooves are formed by a laser beam irradiation method, the various constituent layers can be uniformly deposited and then divided into parts, so there is less damage during handling due to patterning, and the yield is greatly improved. In addition, when dividing the amorphous silicon layer into a predetermined pattern using the laser irradiation method described above, a patterned resin layer made of electrically insulating resin is formed by screen printing or the like in advance on the laser beam irradiation portion, so that the amorphous silicon layer is crystallized. It is possible to avoid an increase in leakage current due to heat dissipation and the occurrence of short circuit points due to scattering of electrode layer components, maintain good battery performance, and easily apply it to long, large-area solar cells, thereby improving productivity. In addition, when connecting the unit cells electrically, forming connection electrodes by screen printing greatly improves productivity and allows the connection electrode layer required for series connection to be stably formed in a narrow width at the connection area, resulting in a reduction in the area of the connection area. , an increase in the active area as a solar cell can be obtained. In addition, in the present invention, since the cell dividing grooves and the electrode dividing grooves are closed with a closing resin layer made of electrically insulating resin prior to forming the connecting electrode layer, when forming the connecting electrode layer by a film forming method such as a screen printing method, It is possible to reliably prevent short-circuit accidents between the connecting electrode layer and the first electrode layer through the dividing grooves, and the yield is improved, which is very advantageous in terms of production. Further, if the resin is filled to the inside of the dividing groove, the width of the connecting portion can be narrowed and the yield can also be improved. Note that it is further advantageous in this respect if the resin of the closing resin layer is opaque to the laser beam used. Hereinafter, the structure and manufacturing method of the amorphous solar cell of the present invention will be explained in detail with reference to FIG. As the electrically insulating substrate 1 of the present invention, any substrate made of an electrically insulating material can be used, and specifically, a polymer film, a ceramic plate, a glass plate, or a metal foil with an insulating layer provided on the surface can be used. However, preferably by a roll-to-roll method, the constituent layers can be deposited one after another on a long running substrate;
A polymer film suitable for mass production is used.
The polymer film may be any polymer film that has the heat resistance necessary for amorphous silicon deposition, but polyethylene terephthalate (PET) film, polyethylene naphthalate film, and polyimide film, which have excellent mechanical properties, are preferably used. etc. are used. Then, as shown in FIG. 1A, a first
The electrode layer 2 and the amorphous semiconductor layer 3 of the photovoltaic layer are deposited uniformly. As this first electrode layer 2, a translucent electrode or a normal metal electrode is used depending on the overall configuration, as is well known. As the light-transmitting electrode, various known metal oxide layers or laminated structures of metal thin layers and dielectric layers are used. As the metal electrode layer, A, Ag, Ti, W, Co, Cr, Ni, nichrome,
Single-layer films or multi-layer films of single metals such as stainless steel or alloy metals are used. Preferably A having high light reflectivity and good bonding characteristics with the amorphous semiconductor layer.
/A laminated structure film of stainless steel layers is used. Note that this film thickness is desirably 0.3 μm or more from the viewpoint of reducing electrical resistance and mechanical strength. The amorphous semiconductor layer 3 uniformly provided on the metal electrode layer 2 is not particularly limited as long as it is an amorphous silicon layer having photovoltaic ability. There are pin-shaped amorphous silicon photovoltaic layers formed using the plasma CVD method using glow discharge decomposition.
The amorphous silicon photovoltaic layer may not only include a multilayer tandem structure such as pin/pin, pin/pin/pin, but also a narrow band gap or amorphous silicon germanium, amorphous silicon carbide, etc. A wide bandgap amorphous silicon semiconductor layer can also be used as appropriate. Next, the obtained continuous film amorphous solar cell is divided into unit cells by a laser beam irradiation method, and patterned resin layers 4a and 4b made of electrically insulating resin to enable electrical connection are formed as shown in FIG. 1B. As shown in FIG. 2, the semiconductor layer 3 is provided on the amorphous semiconductor layer 3 in the following manner. That is, the patterned resin layers 4a and 4b are patterned into a divided pattern on the amorphous semiconductor layer 3 and provided using a screen printing method or the like. In addition, Figure 2 is a 10cm x 10cm large-area continuous cell.
The dividing pattern, that is, the pattern resin layer 4a, when creating an integrated module M in which three unit cells C are formed and connected in series with a size of
4b is shown, and it goes without saying that the present invention is not limited thereto. Further, the patterned resin layers 4a and 4b may be provided between the first and second electrode layers due to their functions, and instead of this example, they may be provided on the first electrode layer 2, and then the amorphous semiconductor layer 3 is provided. It may be provided. By the way, the patterned resin layers 4a and 4b need to be provided with a width slightly wider than the dividing width of the laser beam so as to prevent short circuits on the dividing surfaces after the dividing process using the laser beam. In addition, if the layer thickness is less than 1 μm, short circuit between the first electrode layer 2 and the second electrode layer 5 described below cannot be prevented, and if it is more than 50 μm, a step will occur and the deposition of the second electrode layer 5 and post-processing will be difficult. Difficulty arises in forming connection electrodes and collection electrodes. Epoxy resin, polyamide resin, polyimide resin, polyester resin, etc. can also be used as the electrically insulating resin layer forming the patterned resin layers 4a, 4b. Patterned resin layers 4a and 4b
It is convenient in terms of production if both are made of the same resin. In addition, when providing on the said interface, a screen printing method, a coating method, etc. can be applied. Further, it is preferable that the patterned resin layers 4a and 4b are opaque to the laser beam used for division. When the resin layer is opaque, by selecting the power of the laser beam, it is possible to selectively cut the surface layer only on the laser irradiation side and cut the front and back layers including the opposite side. Next, a second electrode layer 5 is deposited uniformly over the entire surface of the substrate as shown in FIG. 1C. As the second electrode layer 5, a transparent electrode layer is used when the first electrode layer 1 is a metal electrode layer, and a metal electrode layer is used when the first electrode layer is a transparent electrode layer. As such a metal electrode layer and a transparent electrode layer, those described above for the first electrode layer can be applied as they are. Next, in order to convert the obtained continuous film solar cell into a module M and a unit cell C, a predetermined laser beam is scanned over the dividing pattern shown in FIG.
to be drilled. As long as the laser has a wavelength range that can be absorbed by each constituent layer, a laser with a wavelength of 0.2 to 2 μm is used, but YAG lasers, which are currently widely used industrially, are preferably used. . In addition, the laser beam power is
Cut all the metal electrode layer/amorphous silicon layer/insulating layer/transparent electrode layer along a to form a unit cell C.
The optimum power is selected depending on the case of forming the cell dividing groove 6 that divides into two, and the case of forming the electrode dividing groove 7 that divides the connection part A by cutting only the transparent electrode layer along the patterned resin layer 4b. , divided into parts. In addition, as is clear from FIG. 2, the electrode dividing groove 7
are provided along the cell division grooves 6 between adjacent unit cells C so as to form therebetween a connecting portion A consisting of each layer of the first electrode layer/amorphous semiconductor layer/divided second electrode layer. The connecting portion A does not need to be provided over the entire length of the cell dividing groove 6; in this case, the electrode dividing groove 7 may be provided along the connecting portion A depending on the shape of the connecting portion A.
is provided so as to be separated from the second electrode layer of the unit cell C. Next, as shown in FIG. 1E, the cell dividing grooves 6 and the electrode dividing grooves 7 formed by laser beam irradiation are filled with electrically insulating resin by screen printing, coating, etc. to form a closing resin layer 8. is formed. As the electrically insulating resin forming the closing resin layer 8, the resin of the patterned resin layers 4a and 4b described above can be applied as is. Next, on the second electrode layer 5, a collecting electrode 9 and a connecting electrode layer 10, 1 having a pattern as shown in FIG.
As shown in FIG.
are provided by a screen printing method to connect them. In this example, the connection electrode layer 10 serves as a bus bar for the collection electrode 9. The collecting electrode 9 and the connecting electrode layers 10 and 10' are made of Ag, Au, Ni,
A metal layer mainly composed of Cu, A, or Cr or a conductive resin layer in which these metals are dispersed in resin is used. Of course, these metals can be patterned and deposited using a vacuum evaporation method, but a conductive resin layer in which a conductive resin in which these metals are dispersed in a resin is formed by a screen printing method is preferable from the viewpoint of productivity. . The connection electrode layers 10 and 10' are shown in FIG.
As shown in FIG. 2, a connecting portion A is provided between a cell dividing groove 6 which has been divided into all layers by laser beam irradiation and an electrode dividing groove 7 which has only divided the second electrode layer 5.
Note that the connection electrode layer 10' serves as a current extraction electrode. Then, the laminate of the first electrode layer/amorphous semiconductor layer/second electrode layer/connection electrode layer of the connection part A is irradiated with laser light to melt and mix the laminate, and then solidified by natural cooling or the like. By laser welding, as shown in FIG. The two electrodes are electrically connected. The laser light may be irradiated from the connection electrode layer side, or if the insulating substrate is transparent to the laser light, it can be irradiated from the substrate side. Note that it is not necessary to weld the entire surface of the joint, as a sufficient electrical connection can be obtained with a suitable number of spot welds. The integrated amorphous solar cell obtained as described above is sealed with a resin or the like, as is well known, and then manufactured into a product. As described above, according to the present invention, an amorphous solar cell with good area efficiency can be obtained, and the amorphous solar cell can be integrated only by a processing process using a laser beam irradiation method after laminating an amorphous semiconductor layer. It can be manufactured with very high yield and productivity. In particular, it is preferable to carry out each of the above-mentioned steps using a long polymer film as a substrate by the Rolls roll method.
In addition, in the above second invention, each step may be performed separately, or some of them may be combined and performed simultaneously, and the order may be changed if possible. The present invention will be explained below with reference to Examples. [Example] A 100 μm thick polyester film (PET) was used as the electrically insulating substrate 1. First, the film substrate is mounted on a DC magnetron butterfly device,
The aluminum layer (A
) 0.4 μm and a stainless steel layer (SS) of 100 Å were successively deposited, and a highly reflective metal electrode layer 2 was provided on the long film substrate 1 as the first electrode layer 2 . Furthermore, a pin-type photovoltaic layer of amorphous silicon is deposited as an amorphous semiconductor layer 3 on this PET/A/SS deposited body by a roll-to-roll method disclosed in Japanese Patent Application Laid-Open No. 59-34668. It was long and deposited continuously over a large area. In order to form an integrated solar cell module in which three are connected in series on the same substrate, black insulating epoxy resin is coated with PET/A/SS/ as patterned resin layers 4a and 4b in the basic pattern shown in Fig. 2.
It was provided on the amorphous semiconductor layer using a screen printing method to have a width of 2 mm and a thickness of 12 μm. Note that the width of the connecting portion A was 2 mm. Next, as the second electrode layer 5, a transparent electrode layer made of indium oxide (ITO) was deposited uniformly to a thickness of about 600 Å using electron beam evaporation to fabricate a continuous cell. Next, a Q-switch type YAG laser beam is scanned over the patterned resin layer 4a shown in Figure 2 to cut the entire continuous cell consisting of A/SS/amorphous silicon/insulating layer/ITO layer, as shown in Figure 1D. Cell dividing grooves 6 as shown were bored. At this time, the Q switch frequency is 2KHz, the peak power of the laser light pulse is 2KW, and the scanning speed is 32
mm/sec. Further, the peak power of the laser beam was reduced to 200 W, and the insulating layer 4b in FIG. 2 was scanned under the same conditions except for the ITO
By cutting only the layer, the electrode dividing groove 7 shown in FIG. 1D is formed.
was drilled to form the connection part A. Then, as shown in FIG. 1E, a closing resin layer 8 made of black epoxy resin was formed thereon by screen printing to fill the cell dividing grooves 6 and electrode dividing grooves 7 with a width of 2 mm and a thickness of 12 μm. Then,
A collecting electrode 9 and connecting electrode layers 10, 10' having the pattern shown in FIG. 3 were formed using a screen printing method as follows. In other words, polyester-based Ag
A collection electrode 9 and a connecting electrode layer 10, 1 with a thickness of 15 μm are formed by screen printing conductive resin and drying it.
I got 0'. Next, on the connection electrode layers 10, 10'
By intermittently irradiating and scanning a YAG laser beam with a peak power of 2KW, an ohmic connection laser weld 11 is formed between the first electrode layer 2 and the connection electrode layers 10 and 10'. A three-series integrated solar cell module was formed. As a result of measuring this module under an AM-1, 100 mW/cm 2 solar simulator, good battery characteristics as shown in Table 1 were obtained, confirming the effectiveness of the present invention. 【table】

【図面の簡単な説明】[Brief explanation of the drawing]

第1図A〜Gは、本発明の実施例の構成及びそ
の形成の工程を示した側断面図、第1図Fは第3
図A−B線での部分側断面図、第2図は該実施例
のモジユール形成の為の絶縁層形成パターンを説
明する平面図、第3図は該実施例のモジユールの
収集電極及び接続電極層のパターンを示す平面図
である。 1……基板、2……第1電極層、3……非晶質
半導体、4……パターン樹脂層、5……第2電極
層、6……セル分割溝、7……電極分割溝、8…
…閉鎖樹脂層、9……収集電極、10……接続電
極、11……レーザ溶接部。
1A to 1G are side sectional views showing the configuration of the embodiment of the present invention and the process of forming the same, and FIG. 1F is the third
FIG. 2 is a plan view illustrating the insulating layer formation pattern for forming the module of this example, and FIG. 3 is a partial side sectional view taken along the line A-B in this example. FIG. 3 is a collector electrode and connection electrode of the module of this example. FIG. 3 is a plan view showing a pattern of layers. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First electrode layer, 3... Amorphous semiconductor, 4... Patterned resin layer, 5... Second electrode layer, 6... Cell dividing groove, 7... Electrode dividing groove, 8...
... Closing resin layer, 9 ... Collection electrode, 10 ... Connection electrode, 11 ... Laser welding part.

Claims (1)

【特許請求の範囲】 1 絶縁性基板上に積層して設けられた第1電極
層、非晶質半導体層、第2電極層とからなる分割
された複数のユニツトセルを、互いに隣接するユ
ニツトセルの第1電極層と第2電極層とを順次電
気接続した非晶質太陽電池において、ユニツトセ
ルに分割するレーザ光照射法により形成されたセ
ル分割溝と、隣接するユニツトセル間のセル分割
溝に沿つてレーザ光照射法により第2電極層を分
割してセル分割溝との間に接続部を形成する電極
分割溝と、セル分割溝及び電極分割溝を閉鎖する
電気絶縁性の樹脂よりなる閉鎖樹脂層と、セル分
割溝を跨いで設けられた前記隣接するユニツトセ
ルの一方のユニツトセルの第2電極層と他方のユ
ニツトセルの接続部とを電気接続する接続電極層
と、接続部にレーザ溶接により形成された接続電
極層と第1電極層とを電気接続してユニツトセル
間を電気接続する溶接部とを備えたことを特徴と
する非晶質太陽電池。 2 前記セル分割溝及び電極分割溝に沿つて第1
電極層と第2電極層との間に電気絶縁性の樹脂よ
りなるパターン樹脂層が形成された特許請求の範
囲第1項記載の非晶質太陽電池。 3 前記パターン樹脂層が分割溝形成に使用する
レーザ光に不透明である特許請求の範囲第2項記
載の非晶質太陽電池。 4 前記閉鎖樹脂層がレーザ溶接のレーザ光に不
透明である特許請求の範囲第1項、第2項若しく
は第3項記載の非晶質太陽電池。 5 絶縁性基板上に積層して設けられた第1電極
層、非晶質シリコン層、第2電極層とからなる分
割された複数のユニツトセルを、互いに隣接する
ユニツトセルの一方のユニツトセルの第1電極槽
と他方のユニツトセルの第2電極層とを順次電気
接続した非晶質太陽電池の製造方法において、前
記絶縁性基板上に第1電極層、非晶質シリコン
層、第2電極槽を順次積層した連続セルを形成し
た後、下記(イ)〜(ホ)の各工程によりユニツトセルに
分割し、次いで分割したユニツトセル間を電気接
続して、集積化することを特徴とする非晶質太陽
電池の製造方法。 (イ) 前記ユニツトセルに分割するセル分割パター
ンを第1のレーザ光で走査して連続セルの全層
を切断するセル分割溝を穿設し、ユニツトセル
に分割する工程。 (ロ) 接続するユニツトセル間のセル分割パターン
に沿つた接続部を形成する電極分割パターンを
第2のレーザ光で走査して前記第2電極層を切
断する電極分割溝を穿設して各ユニツトセルに
接続部を形成する工程。 (ハ) 前記セル分割溝及び電極分割溝を閉鎖する電
気絶縁性の樹脂よりなる閉鎖樹脂層を形成する
工程。 (ニ) 隣接するユニツトセル間のセル分割溝を跨い
で一方のユニツトセルの第2電極層と他方のユ
ニツトセルの接続部の第2電極層とを接続する
接続電極層を形成する工程。 (ホ) 接続部に第3のレーザ光を照射して接続部の
第1電極層と接続電極層とをレーザ溶接して電
気接続する工程。 6 連続セルの形成に際し、第1電極層と第2電
極層との間に前記分割パターン及び電極分割パタ
ーンに従つた電気絶縁性の樹脂よりなるパターン
樹脂層を形成する特許請求の範囲第5項記載の非
晶質太陽電池の製造方法。 7 前記パターン樹脂層が第1及び第2のレーザ
光に不透明である特許請求の範囲第6項記載の非
晶質太陽電池の製造方法。 8 前記パターンの樹脂層をスクリーン印刷法に
より形成する特許請求の範囲第6項若しくは第7
項記載の非晶質太陽電池の製造方法。 9 前記閉鎖樹脂層をスクリーン印刷法により形
成する特許請求の範囲第5項、第6項、第7項若
しくは第8項記載の非晶質太陽電池の製造方法。 10 前記閉鎖樹脂層が第3のレーザ光に不透明
である特許請求の範囲第9項記載の非晶質太陽電
池の製造方法。 11 前記接続電極層がAg,Au,Cu,Ni,Al,
Crを主体とする層であり、スクリーン印刷法に
より形成される特許請求の範囲第5項〜第10項
記載のいずれかの非晶質太陽電池の製造方法。 12 前記絶縁性基板が高分子フイルムである特
許請求の範囲第5項〜第11項記載のいずれかの
非晶質太陽電池の製造方法。
[Scope of Claims] 1 A plurality of divided unit cells each consisting of a first electrode layer, an amorphous semiconductor layer, and a second electrode layer provided in a stacked manner on an insulating substrate are separated into adjacent unit cells. In an amorphous solar cell in which a first electrode layer and a second electrode layer are sequentially electrically connected, a laser beam is applied along a cell dividing groove formed by a laser beam irradiation method to divide the cell into unit cells and a cell dividing groove between adjacent unit cells. An electrode dividing groove that divides the second electrode layer by a light irradiation method and forms a connection part between the second electrode layer and the cell dividing groove; and a closing resin layer made of an electrically insulating resin that closes the cell dividing groove and the electrode dividing groove. , a connecting electrode layer that electrically connects the second electrode layer of one unit cell of the adjacent unit cells and the connecting part of the other unit cell provided across the cell dividing groove, and a connection formed at the connecting part by laser welding. What is claimed is: 1. An amorphous solar cell comprising: a welding portion electrically connecting an electrode layer and a first electrode layer and electrically connecting unit cells. 2 along the cell dividing groove and the electrode dividing groove.
The amorphous solar cell according to claim 1, wherein a patterned resin layer made of an electrically insulating resin is formed between the electrode layer and the second electrode layer. 3. The amorphous solar cell according to claim 2, wherein the patterned resin layer is opaque to the laser beam used for forming the dividing grooves. 4. The amorphous solar cell according to claim 1, 2, or 3, wherein the closing resin layer is opaque to laser light for laser welding. 5 A plurality of divided unit cells each consisting of a first electrode layer, an amorphous silicon layer, and a second electrode layer provided in a stacked manner on an insulating substrate are connected to the first electrode of one of the adjacent unit cells. In the method for manufacturing an amorphous solar cell in which a cell and a second electrode layer of the other unit cell are sequentially electrically connected, a first electrode layer, an amorphous silicon layer, and a second electrode cell are sequentially laminated on the insulating substrate. After forming a continuous cell, the amorphous solar cell is divided into unit cells according to the steps (a) to (e) below, and then the divided unit cells are electrically connected and integrated. Production method. (a) A step of scanning the cell division pattern to be divided into unit cells with a first laser beam to form cell division grooves that cut all layers of continuous cells, and dividing the cells into unit cells. (b) A second laser beam is used to scan an electrode division pattern that forms a connection part along the cell division pattern between unit cells to be connected, and an electrode division groove is formed to cut the second electrode layer to form each unit cell. The process of forming a connection part. (c) A step of forming a closing resin layer made of electrically insulating resin to close the cell dividing groove and the electrode dividing groove. (d) Step of forming a connection electrode layer that connects the second electrode layer of one unit cell and the second electrode layer of the connection portion of the other unit cell by straddling the cell dividing groove between adjacent unit cells. (e) A step of electrically connecting the first electrode layer and the connection electrode layer of the connection part by laser welding the connection part by irradiating the third laser light to the connection part. 6. Claim 5, wherein a patterned resin layer made of electrically insulating resin is formed between the first electrode layer and the second electrode layer in accordance with the division pattern and the electrode division pattern when forming continuous cells. The method for manufacturing the amorphous solar cell described above. 7. The method of manufacturing an amorphous solar cell according to claim 6, wherein the patterned resin layer is opaque to the first and second laser beams. 8. Claim 6 or 7, wherein the patterned resin layer is formed by a screen printing method.
1. Method for manufacturing an amorphous solar cell as described in Section 1. 9. The method for manufacturing an amorphous solar cell according to claim 5, 6, 7, or 8, wherein the closing resin layer is formed by a screen printing method. 10. The method of manufacturing an amorphous solar cell according to claim 9, wherein the closing resin layer is opaque to the third laser beam. 11 The connection electrode layer is Ag, Au, Cu, Ni, Al,
11. The method of manufacturing an amorphous solar cell according to claim 5, wherein the layer is mainly composed of Cr and is formed by a screen printing method. 12. The method for manufacturing an amorphous solar cell according to any one of claims 5 to 11, wherein the insulating substrate is a polymer film.
JP60101540A 1985-02-15 1985-05-15 Amorphous solar cell and manufacture thereof Granted JPS61260681A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60101540A JPS61260681A (en) 1985-05-15 1985-05-15 Amorphous solar cell and manufacture thereof
US06/828,197 US4697041A (en) 1985-02-15 1986-02-10 Integrated solar cells
FR868602039A FR2577716B1 (en) 1985-02-15 1986-02-14 INTEGRATED SOLAR CELLS AND THEIR MANUFACTURING METHOD
DE19863604894 DE3604894A1 (en) 1985-02-15 1986-02-15 INTEGRATED SOLAR CELLS AND METHOD FOR THEIR PRODUCTION

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60101540A JPS61260681A (en) 1985-05-15 1985-05-15 Amorphous solar cell and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS61260681A JPS61260681A (en) 1986-11-18
JPH0519992B2 true JPH0519992B2 (en) 1993-03-18

Family

ID=14303265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60101540A Granted JPS61260681A (en) 1985-02-15 1985-05-15 Amorphous solar cell and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS61260681A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080289683A1 (en) * 2004-06-04 2008-11-27 Timothy Michael Walsh Thin-Film Solar Cell Interconnection
JP7522590B2 (en) * 2020-06-25 2024-07-25 株式会社カネカ Method for manufacturing solar cell device and solar cell device

Also Published As

Publication number Publication date
JPS61260681A (en) 1986-11-18

Similar Documents

Publication Publication Date Title
US4697041A (en) Integrated solar cells
US5268037A (en) Monolithic, parallel connected photovoltaic array and method for its manufacture
US5421908A (en) Thin-film solar cell and method for the manufacture thereof
AU2004204637B2 (en) Transparent thin-film solar cell module and its manufacturing method
KR102729996B1 (en) Local metallization for semiconductor substrates using laser beams
JPH11312815A (en) Manufacturing method of thin film solar cell
JPS61214483A (en) Manufacture of integrated type solar cell
JPH11103078A (en) Solar battery module, manufacture, thereof and manufacturing equipment
JP3393842B2 (en) Method for manufacturing photoelectric conversion device
JPH0519992B2 (en)
JP2002261314A (en) Method for manufacturing thin-film photoelectric conversion module
JPH05314969A (en) Manufacture of battery
JP3111820B2 (en) Manufacturing method of thin film solar cell
JP2001298203A (en) Manufacturing method of thin film solar cell
JPS61187377A (en) Dividing method for processing of amorphous solar battery
JP3170914B2 (en) Thin film solar cell and method of manufacturing the same
JPS62147784A (en) Amorphous solar cell and manufacture thereof
JPH0243776A (en) Manufacture of thin film solar cell
JP3573869B2 (en) Method for manufacturing photovoltaic device
JP3685964B2 (en) Photoelectric conversion device
JPH0519991B2 (en)
JPS61241981A (en) Manufacture of thin film solar battery
JPH0546991B2 (en)
JP2001111079A (en) Method for manufacturing photoelectric conversion device
JP3102232B2 (en) Thin film solar cell and method of manufacturing the same

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees