JPH05209272A - Method for growing tungsten film - Google Patents
Method for growing tungsten filmInfo
- Publication number
- JPH05209272A JPH05209272A JP33865391A JP33865391A JPH05209272A JP H05209272 A JPH05209272 A JP H05209272A JP 33865391 A JP33865391 A JP 33865391A JP 33865391 A JP33865391 A JP 33865391A JP H05209272 A JPH05209272 A JP H05209272A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- tungsten film
- tungsten
- heated
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 20
- 239000010937 tungsten Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000012159 carrier gas Substances 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、タングステン膜の化学
気相成長法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition method for a tungsten film.
【０００２】[0002]
【従来の技術】従来の化学気相成長法によるタングステ
ン薄膜の形成方法は、ＷＦ6 ガスをＨ2 あるいはＳｉＨ
4 ガスで還元する方法が一般的であった。2. Description of the Related Art A conventional method for forming a tungsten thin film by chemical vapor deposition is to use WF 6 gas as H 2 or SiH.
The method of reduction with 4 gases was common.
【０００３】[0003]
【発明が解決しようとする課題】これらの方法は、成膜
反応の第一段階に必要なタングステン核形成のために、
次式に示すＷＦ6 ガスと基板Ｓｉとの反応を用いてい
る。These methods are for the purpose of forming the tungsten nuclei necessary for the first step of the film formation reaction.
The reaction between the WF 6 gas and the substrate Si shown in the following equation is used.
【０００４】 ３／２Ｓｉ＋ＷＦ6 →Ｗ＋３／２ＳｉＦ4 ↑ この結果、成膜反応初期において、基板Ｓｉが数１００
〜数１０００Ａ程度浸食されるという問題点がある。素
子微細化にともない、現在先端的集積回路素子では、ト
ランジスタを形成する不純物拡散層の接合深さが０．２
μｍ以下となっているため、このような基板浸食を引起
こす成膜方法を採用すると接合リーク電流が大きくなっ
てしまい接合部の信頼性が確保できない。3 / 2Si + WF 6 → W + 3 / 2SiF 4 ↑ As a result, in the initial stage of the film formation reaction, the number of substrates Si is several hundred.
There is a problem that it is eroded at about several 1000 A. With the miniaturization of devices, the junction depth of the impurity diffusion layers forming transistors is currently 0.2 in advanced semiconductor circuit devices.
Since the thickness is less than μm, if a film forming method that causes such substrate erosion is adopted, the junction leak current becomes large, and the reliability of the joint cannot be secured.
【０００５】[0005]
【課題を解決するための手段】本発明では、Ｃｐ2 ＷＨ
2 （ビスシクロペンタジエニルタングステンジハイドラ
イド）を減圧下で昇華させ、気体状態の該物質を基板表
面で分解させることによりタングステン膜を該基板上に
形成する。Ｃｐ2 ＷＨ2 は、基板Ｓｉとは直接反応せ
ず、この物質自身の分解によりタングステン膜が析出す
る。According to the present invention, Cp 2 WH
2 (Biscyclopentadienyltungsten dihydride) is sublimated under reduced pressure, and the substance in a gas state is decomposed on the surface of the substrate to form a tungsten film on the substrate. Cp 2 WH 2 does not directly react with the substrate Si, and the tungsten film is deposited by the decomposition of this substance itself.
【０００６】（実施例１）本実施例では、例えば図１に
示す装置を用いる。Ｃｐ2 ＷＨ2 １０１を石英製のボー
ト１０２上で約２００℃に加熱し、昇華させる。これ
を、Ｈ2 とＡｒをキャリヤガスとして約３００℃に加熱
した石英菅１０３中のＳｉ基板表面まで輸送する。当然
ながらＳｉ基板１０５も約３００℃に加熱されている。
石英菅１０３は、真空ポンプ１０４で、約０．１〜１Ｔ
ｏｒｒまで排気されている。石英菅１０３中にはＳｉ基
板１０５が設置されており、この表面でＣｐ2 ＷＨ2 が
分解し、タングステン膜が析出する。本方法によれば、
タングステン膜は、加熱された石英菅１０３の内表面に
も堆積するため、一定期間ごとに石英菅１０３の洗浄作
業が必要となる。なおＳｉ基板１０５をＣｐ2 ＷＨ2 １
０１のごく近くに配置するとキャリアガスで輸送しなく
ても拡散で基板まで到達するが、この場合もタングステ
ン膜の酸化を抑制するためにＨ2 を導入する必要があ
る。(Embodiment 1) In this embodiment, for example, the device shown in FIG. 1 is used. Cp 2 WH 2 101 is heated to about 200 ° C. on a quartz boat 102 and sublimated. This is transported to the surface of the Si substrate in the quartz tube 103 heated to about 300 ° C. using H 2 and Ar as carrier gases. Naturally, the Si substrate 105 is also heated to about 300 ° C.
The quartz tube 103 is a vacuum pump 104, and is about 0.1 to 1T.
It is exhausted to orr. A Si substrate 105 is installed in the quartz tube 103, and Cp 2 WH 2 is decomposed on this surface, and a tungsten film is deposited. According to this method,
Since the tungsten film is also deposited on the inner surface of the heated quartz tube 103, it is necessary to clean the quartz tube 103 at regular intervals. The Si substrate 105 is replaced with Cp 2 WH 2 1
When it is arranged very close to 01, it reaches the substrate by diffusion without transporting with a carrier gas, but in this case also, H 2 must be introduced in order to suppress the oxidation of the tungsten film.
【０００７】（実施例２）本発明の第２の実施例には、
例えば図２に示す装置を用いる。Ｃｐ2 ＷＨ2 １０１を
昇華器２０１内で約１５０℃に加熱し、昇華させる。こ
れを、Ａｒガスと混合し、約１５０℃に加熱したガス導
入菅２０２を用いて反応室２０３まで輸送する。反応室
２０３は、器壁が約７０℃に保温され、室内は真空ポン
プ１０４で約１０ｍＴｏｒｒまで排気されている。また
反応室２０３には、もう一本のガス導入系２０４からＨ
2 ガスが導入されている。反応室２０３中には基板ヒー
ター２０５上にＳｉ基板１０５が設置されており、この
表面でＣｐ2 ＷＨ2 が分解し、タングステン膜が析出す
る。(Embodiment 2) In the second embodiment of the present invention,
For example, the device shown in FIG. 2 is used. Cp 2 WH 2 101 is heated in the sublimator 201 to about 150 ° C. to be sublimated. This is mixed with Ar gas and transported to the reaction chamber 203 using the gas introduction tube 202 heated to about 150 ° C. The wall of the reaction chamber 203 is kept at about 70 ° C., and the inside of the reaction chamber 203 is evacuated to about 10 mTorr by the vacuum pump 104. Further, the reaction chamber 203 is supplied with H from another gas introduction system 204.
2 gas is introduced. A Si substrate 105 is installed on a substrate heater 205 in the reaction chamber 203, and Cp 2 WH 2 is decomposed on the surface of the Si substrate 105 to deposit a tungsten film.
【０００８】本方法によれば、タングステン膜の大部分
は、加熱されたＳｉ基板１０５上のみに堆積するため、
反応室内壁の洗浄回数は大幅に削減できる。また、成膜
条件を適当に選ぶことにより、ＳｉＯ2 等のマスクパタ
ーンが形成されたＳｉの露出部のみにタングステン膜を
形成する選択成膜もできる利点がある。選択成膜の条件
は例えば昇華温度約１５０℃、基板加熱温度約２２０
℃、反応室２０３内の圧力は約１０ｍＴｏｒｒである。According to this method, most of the tungsten film is deposited only on the heated Si substrate 105.
The number of times of cleaning the inner wall of the reaction chamber can be significantly reduced. Further, there is an advantage that the tungsten film can be selectively formed only on the exposed portion of Si on which the mask pattern such as SiO 2 is formed by appropriately selecting the film forming conditions. The conditions for selective film formation are, for example, a sublimation temperature of about 150 ° C. and a substrate heating temperature of about 220.
The temperature inside the reaction chamber 203 is about 10 mTorr.
【０００９】[0009]
【発明の効果】以上説明したように、本発明では、基板
Ｓｉを全く浸食することなくタングステン膜を形成する
ことが可能となる。本発明の方法を能動素子と配線間の
接続、いわゆるプラグタングステンの形成に使えば、素
子の接合部の信頼性を確保できる。As described above, according to the present invention, the tungsten film can be formed without eroding the substrate Si at all. If the method of the present invention is used for the connection between the active element and the wiring, that is, the formation of so-called plug tungsten, the reliability of the junction portion of the element can be secured.
【図１】本発明の実施例１に用いた装置の構成図であ
る。FIG. 1 is a configuration diagram of an apparatus used in Example 1 of the present invention.
【図２】本発明の実施例２に用いた装置の構成図であ
る。FIG. 2 is a configuration diagram of an apparatus used in Example 2 of the present invention.
１０１ Ｃｐ2 ＷＨ2 １０２ 石英ボート １０３ 石英菅 １０４ 真空ポンプ １０５ Ｓｉ基板 ２０１ 昇華器 ２０２ ガス導入菅 ２０３ 反応室 ２０４ ガス導入系 ２０５ 基板ヒーター101 Cp 2 WH 2 102 Quartz Boat 103 Quartz Tube 104 Vacuum Pump 105 Si Substrate 201 Sublimator 202 Gas Introducing Tube 203 Reaction Chamber 204 Gas Introducing System 205 Substrate Heater
Claims (1)
ステン薄膜を成長する方法において、分子式がＣｐ2 Ｗ
Ｈ2 であらわされる物質を減圧下で昇華させ、気体とな
った該物質を基板表面で分解させてタングステン膜を成
長する方法。1. A method of growing a tungsten thin film on a substrate by chemical vapor deposition, wherein the molecular formula is Cp 2 W.
A method of growing a tungsten film by sublimating a substance represented by H 2 under reduced pressure and decomposing the gasified substance on the substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33865391A JPH05209272A (en) | 1991-12-20 | 1991-12-20 | Method for growing tungsten film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33865391A JPH05209272A (en) | 1991-12-20 | 1991-12-20 | Method for growing tungsten film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05209272A true JPH05209272A (en) | 1993-08-20 |
Family
ID=18320203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33865391A Withdrawn JPH05209272A (en) | 1991-12-20 | 1991-12-20 | Method for growing tungsten film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05209272A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006128611A (en) * | 2004-09-30 | 2006-05-18 | Tri Chemical Laboratory Inc | Film forming material, film forming method, and element |
| WO2007041089A3 (en) * | 2005-09-29 | 2007-06-07 | Praxair Technology Inc | Organometallic compounds and methods of use thereof |
| JP2010504999A (en) * | 2006-09-28 | 2010-02-18 | プラクスエア・テクノロジー・インコーポレイテッド | Organometallic precursor compounds |
| CN102534543A (en) * | 2012-02-22 | 2012-07-04 | 上海大学 | Method for preparing tungsten by chemical vapor deposition and device thereof |
-
1991
- 1991-12-20 JP JP33865391A patent/JPH05209272A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006128611A (en) * | 2004-09-30 | 2006-05-18 | Tri Chemical Laboratory Inc | Film forming material, film forming method, and element |
| WO2007041089A3 (en) * | 2005-09-29 | 2007-06-07 | Praxair Technology Inc | Organometallic compounds and methods of use thereof |
| JP2010504999A (en) * | 2006-09-28 | 2010-02-18 | プラクスエア・テクノロジー・インコーポレイテッド | Organometallic precursor compounds |
| CN102534543A (en) * | 2012-02-22 | 2012-07-04 | 上海大学 | Method for preparing tungsten by chemical vapor deposition and device thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990311 |