JPH0521648A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0521648A
JPH0521648A JP3168185A JP16818591A JPH0521648A JP H0521648 A JPH0521648 A JP H0521648A JP 3168185 A JP3168185 A JP 3168185A JP 16818591 A JP16818591 A JP 16818591A JP H0521648 A JPH0521648 A JP H0521648A
Authority
JP
Japan
Prior art keywords
island
heat
heat dissipation
heat conductor
sealing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3168185A
Other languages
Japanese (ja)
Other versions
JP2882101B2 (en
Inventor
Tatsuya Hirai
達也 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3168185A priority Critical patent/JP2882101B2/en
Publication of JPH0521648A publication Critical patent/JPH0521648A/en
Application granted granted Critical
Publication of JP2882101B2 publication Critical patent/JP2882101B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

(57)【要約】 【目的】 モールド成形時の射出圧に抗してアイランド
と放熱用熱伝導体との間の隙間を一定に保ち、アイラン
ドと放熱用熱伝導体との間にボイドを生じさせることな
く両者間に溶融封止材を良好に充填することで、放熱効
果を高める。 【構成】 半導体チップ1とインナーリード3aとを金
属細線4で接続してある。半導体チップ1を載置してい
るアイランド2に小間隔を隔てて放熱用熱伝導体5を対
向配置させてある。アウターリード3bを除いて全体を
封止材6で被覆固化してある。放熱用熱伝導体5の本体
部分5aにおいて切り起こしにより開口部8と曲げ突片
9を形成し、曲げ突片9をアイランド2に当接させ、封
止材6のモールド成形時の射出圧に抗して放熱用熱伝導
体5とアイランド2との間の隙間を一定に保つ。
(57) [Abstract] [Purpose] The gap between the island and the heat dissipation heat conductor is kept constant against the injection pressure at the time of molding, and a void is created between the island and the heat dissipation heat conductor. By satisfactorily filling the melt sealing material between the both without doing so, the heat dissipation effect is enhanced. [Structure] The semiconductor chip 1 and the inner lead 3a are connected by a thin metal wire 4. A heat-dissipating heat conductor 5 is arranged to face the island 2 on which the semiconductor chip 1 is mounted with a small space therebetween. Except for the outer leads 3b, the whole is covered and solidified with the sealing material 6. The opening 8 and the bending projecting piece 9 are formed by cutting and raising in the main body portion 5a of the heat dissipation heat conductor 5, and the bending projecting piece 9 is brought into contact with the island 2 so that the sealing material 6 has an injection pressure during molding. On the contrary, the gap between the heat dissipation heat conductor 5 and the island 2 is kept constant.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、アイランドに載置保
持させた半導体チップとリードフレームのインナーリー
ドとを金属細線を介して接続してあるとともに、アイラ
ンドに小間隔を隔てて放熱用熱伝導体を対向配置してあ
り、リードフレームのアウターリードを除いてアイラン
ド,半導体チップ,金属細線,インナーリードおよび放
熱用熱伝導体を封止材で被覆固化してなる半導体装置に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a structure in which a semiconductor chip mounted and held on an island and an inner lead of a lead frame are connected to each other via a fine metal wire, and a heat conduction for heat dissipation is provided at a small interval on the island. The present invention relates to a semiconductor device in which the bodies are opposed to each other and the island, the semiconductor chip, the thin metal wires, the inner lead, and the heat dissipation heat conductor are covered with a sealing material and solidified except for the outer leads of the lead frame.

【0002】[0002]

【従来の技術】図3は従来のこの種の半導体装置を示す
断面図である。
2. Description of the Related Art FIG. 3 is a sectional view showing a conventional semiconductor device of this type.

【0003】図において、1は半導体チップ、2は半導
体チップ1を載置保持するアイランド、3はリードフレ
ーム、3aはリードフレーム3におけるインナーリー
ド、3bはリードフレーム3におけるアウターリード、
4は半導体チップ1上の電極(図示せず)とインナーリ
ード3aとを電気的に接続する金属細線、5はアイラン
ド2に小間隔を隔てて対向配置された放熱用熱伝導体、
6はリードフレーム3のアウターリード3bを除いて半
導体チップ1,アイランド2,インナーリード3a,金
属細線4および放熱用熱伝導体5を保護のため被覆した
状態で固化した封止材である。
In the figure, 1 is a semiconductor chip, 2 is an island for mounting and holding the semiconductor chip 1, 3 is a lead frame, 3a is an inner lead in the lead frame 3, 3b is an outer lead in the lead frame 3,
Reference numeral 4 is a thin metal wire that electrically connects an electrode (not shown) on the semiconductor chip 1 to the inner lead 3a. Reference numeral 5 is a heat-dissipating heat conductor that is arranged to face the island 2 with a small space therebetween.
Reference numeral 6 denotes an encapsulating material which is solidified in a state in which the semiconductor chip 1, the island 2, the inner leads 3a, the fine metal wires 4 and the heat dissipation heat conductor 5 are covered for protection except the outer leads 3b of the lead frame 3.

【0004】放熱用熱伝導体5は、図4に示すように、
本体部分5aと4つの角隅部の放熱部分5bとからな
り、放熱部分5bの端部は封止材6の外周面に露出して
いる。なお、放熱部分5bはインナーリード3aとは分
離している。
The heat dissipating heat conductor 5 is, as shown in FIG.
It is composed of a main body portion 5a and four corner heat radiation portions 5b, and the end portions of the heat radiation portion 5b are exposed at the outer peripheral surface of the sealing material 6. The heat radiating portion 5b is separated from the inner lead 3a.

【0005】次に動作について説明する。Next, the operation will be described.

【0006】半導体チップ1に電流が供給されることに
より、半導体チップ1が発熱するようになる。その熱
は、アイランド2から、アイランド2と放熱用熱伝導体
5との間に充填されている封止材部分6aを介して放熱
用熱伝導体5に伝搬し、放熱用熱伝導体5から放熱部分
5bを介して外部に放出される。すなわち、放熱用熱伝
導体5を介しての熱伝導による放熱により半導体チップ
1の異常昇温を防止し、半導体チップ1の誤動作を避け
て信頼性を高めるようにしている。
When the current is supplied to the semiconductor chip 1, the semiconductor chip 1 starts to generate heat. The heat propagates from the island 2 to the heat-dissipating heat conductor 5 through the sealing material portion 6a filled between the island 2 and the heat-dissipating heat conductor 5, and then from the heat-dissipating heat conductor 5. It is released to the outside through the heat dissipation portion 5b. That is, abnormal temperature rise of the semiconductor chip 1 is prevented by heat dissipation due to heat conduction through the heat dissipation heat conductor 5, and malfunction of the semiconductor chip 1 is avoided to improve reliability.

【0007】[0007]

【発明が解決しようとする課題】従来の半導体装置にお
いては、その放熱用熱伝導体5の本体部分5aが図4に
示すように、全面にわたって開口部や突起部や凹凸など
のない平坦平板状のものであった。そのため、次のよう
な問題を引き起こしている。
In the conventional semiconductor device, as shown in FIG. 4, the main body portion 5a of the heat dissipating heat conductor 5 has a flat plate shape with no openings, protrusions or irregularities over the entire surface. It was the one. Therefore, it causes the following problems.

【0008】すなわち、封止材6によるモールド成形の
際に、成形金型のキャビティ内にセットして、溶融状態
の封止材をキャビティに射出注入すると、そのときの射
出圧によって放熱用熱伝導体5がアイランド2に近づく
側に押しやられ、アイランド2と放熱用熱伝導体5との
間の隙間の間隔が減少する。
That is, when the sealing material 6 is molded and set in the cavity of the molding die, and the molten sealing material is injected into the cavity, the injection pressure at that time causes heat conduction for heat dissipation. The body 5 is pushed toward the side closer to the island 2 and the gap between the island 2 and the heat dissipation thermal conductor 5 is reduced.

【0009】そして、そのために、アイランド2と放熱
用熱伝導体5との間の隙間に対する溶融封止材の充填が
不充分となり、その隙間における封止材部分6aにボイ
ド(空間,気泡)7が発生し、このボイド7のために封
止材部分6aにおける熱伝導率が低下してしまい、全体
としての放熱効果が低下するという問題があった。
As a result, the gap between the island 2 and the heat dissipating heat conductor 5 is insufficiently filled with the molten sealant, and voids (spaces, bubbles) 7 are formed in the sealant portion 6a in the gap. Occurs, and the voids 7 reduce the thermal conductivity of the sealing material portion 6a, which lowers the heat dissipation effect as a whole.

【0010】この発明は、上記のような問題点を解消す
るために創案されたものであって、アイランドと放熱用
熱伝導体との間にボイドを生じさせない状態で両者間に
溶融封止材が良好に充填された半導体装置を得ることを
目的とする。
The present invention was devised in order to solve the above-mentioned problems, and a molten sealing material is provided between the island and the heat-dissipating heat conductor in a state where no void is generated between them. It is an object of the present invention to obtain a semiconductor device in which is filled well.

【0011】[0011]

【課題を解決するための手段】この発明は、上記課題を
達成するため、アイランドに載置保持させた半導体チッ
プとリードフレームのインナーリードとを金属細線を介
して接続してあるとともに、前記アイランドに小間隔を
隔てて放熱用熱伝導体を対向配置してあり、前記リード
フレームのアウターリードを除いて前記アイランド,半
導体チップ,金属細線,インナーリードおよび放熱用熱
伝導体を封止材で被覆固化してなる半導体装置におい
て、次のような構成をとる。
In order to achieve the above-mentioned object, the present invention has a structure in which a semiconductor chip mounted and held on an island and an inner lead of a lead frame are connected to each other via a thin metal wire. A heat radiation heat conductor is arranged to face each other with a small space between the island, the semiconductor chip, the metal wires, the inner leads and the heat radiation heat conductor except for the outer leads of the lead frame. The solidified semiconductor device has the following configuration.

【0012】この発明の半導体装置は、前記放熱用熱伝
導体のうち前記アイランドに対向する箇所に切り起こし
によって開口部を形成するとともに前記アイランド側に
突出する曲げ突片を形成し、その曲げ突片を前記アイラ
ンドに当接させてあることに特徴を有する。
In the semiconductor device according to the present invention, an opening is formed by cutting and raising in a portion of the heat dissipation heat conductor facing the island, and a bending protrusion protruding toward the island is formed. It is characterized in that the piece is brought into contact with the island.

【0013】[0013]

【作用】この発明の上記構成によれば、放熱用熱伝導体
から切り起こした曲げ突片をアイランドに当接させてあ
るので、封止材のモールド成形の際の溶融封止材の射出
圧に抗して放熱用熱伝導体を所定の位置に位置保持させ
ることができ、アイランドと放熱用熱伝導体との間の隙
間の間隔の減少を免れる。そして、この隙間間隔の減少
防止によって、放熱用熱伝導体の周辺からの隙間への溶
融封止材の流入が良好になる。
According to the above construction of the present invention, since the bending protrusion cut and raised from the heat dissipating heat conductor is brought into contact with the island, the injection pressure of the molten sealing material at the time of molding the sealing material is improved. The heat-dissipating heat conductor can be held at a predetermined position against the heat, and a reduction in the gap between the island and the heat-dissipating heat conductor is avoided. And, by preventing the reduction of the gap distance, the molten sealing material can be favorably flowed into the gap from the periphery of the heat dissipation heat conductor.

【0014】さらに、曲げ突片の根元部分に切り起こし
による開口部が形成されており、この開口部を介しての
溶融封止材の隙間への直接的な流入が行われるから、全
体として、アイランドと放熱用熱伝導体との間の隙間へ
の溶融封止材の充填が良好に行われることとなる。
Further, an opening portion is formed by cutting and raising at the base portion of the bending protrusion, and the molten sealing material directly flows into the gap through this opening portion, so that as a whole, The molten sealant is well filled in the gap between the island and the heat dissipation heat conductor.

【0015】[0015]

【実施例】以下、この発明の実施例を図面に基づいて詳
細に説明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.

【0016】図1はこの発明の一実施例に係る半導体装
置を示す断面図であり、図2はその半導体装置に埋め込
まれるべき放熱用熱伝導体の斜視図である。
FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a perspective view of a heat dissipation heat conductor to be embedded in the semiconductor device.

【0017】アイランド2上に半導体チップ1が載置保
持され、半導体チップ1の周囲に配置された複数のリー
ドフレーム3における各インナーリード3aとこれに対
応する半導体チップ1上の電極(図示せず)とがAuな
どの金属細線(ボンディングワイヤ)4によって電気的
に接続されている。
The semiconductor chip 1 is placed and held on the island 2, and each inner lead 3a in a plurality of lead frames 3 arranged around the semiconductor chip 1 and the corresponding electrodes on the semiconductor chip 1 (not shown). ) Are electrically connected to each other by a thin metal wire (bonding wire) 4 such as Au.

【0018】そして、アイランド2の裏面側にアイラン
ド2から小間隔を隔てて放熱用熱伝導体5が対向配置さ
れているのであるが、この放熱用熱伝導体5として図2
に示すようなものが用いられている。
The heat radiating heat conductor 5 is arranged on the back surface side of the island 2 so as to be opposed to the island 2 with a small space therebetween.
The one shown in is used.

【0019】すなわち、放熱用熱伝導体5のうちアイラ
ンド2に対向する本体部分5aの4箇所において、その
本体部分5aの切り起こしによって開口部8を形成する
と同時に、アイランド2側に突出する曲げ突片9を形成
してある。4つの開口部8の開口面積は互いに等しく、
また、4つの曲げ突片9の切り起こし量(突出量)も互
いに等しい。
That is, in the heat dissipating heat conductor 5, four opening portions 8 are formed by cutting and raising the main body portion 5a at four locations of the main body portion 5a facing the island 2, and at the same time, bending protrusions projecting toward the island 2 side are formed. A piece 9 is formed. The opening areas of the four openings 8 are equal to each other,
Further, the cut-and-raised amounts (projection amounts) of the four bending protrusions 9 are also equal to each other.

【0020】4つの開口部8および曲げ突片9の位置
は、放熱用熱伝導体5の方形の本体部分5aの2組の対
角線のそれぞれを線対称の対称中心線とするような配置
関係となっている。4つの開口部8の中心を結ぶと、長
方形または正方形となる。
The positions of the four openings 8 and the bending projections 9 are such that the two pairs of diagonal lines of the rectangular main body portion 5a of the heat-dissipating heat conductor 5 are line-symmetrical symmetrical centerlines. Is becoming Connecting the centers of the four openings 8 results in a rectangle or a square.

【0021】図1に示すように、各曲げ突片9の突出端
9aをアイランド2の裏面に当接させる。4つの突出端
9aがアイランド2の裏面に当接することにより、アイ
ランド2に対する放熱用熱伝導体5の平行性が保たれ
る。
As shown in FIG. 1, the projecting end 9a of each bending projecting piece 9 is brought into contact with the back surface of the island 2. Since the four projecting ends 9 a contact the back surface of the island 2, the heat dissipation heat conductor 5 is kept parallel to the island 2.

【0022】次いで、リードフレーム3のアウターリー
ド3bを除いて、半導体チップ1,アイランド2,イン
ナーリード3a,金属細線4および放熱用熱伝導体5を
封止材6のモールド成形によって被覆固化して半導体装
置を得る。
Next, except for the outer leads 3b of the lead frame 3, the semiconductor chip 1, the island 2, the inner leads 3a, the fine metal wires 4 and the heat radiating heat conductor 5 are coated and solidified by molding of the sealing material 6. Obtain a semiconductor device.

【0023】そのモールド成形の際に、溶融封止材の射
出圧が放熱用熱伝導体5をアイランド2側に押圧する
が、放熱用熱伝導体5における切り起こしによる曲げ突
片9がアイランド2に当接していることから、放熱用熱
伝導体5は射出圧に抗してその所定の位置に位置保持さ
れることになる。すなわち、放熱用熱伝導体5とアイラ
ンド2との間の隙間の減少を生じさせない。したがっ
て、放熱用熱伝導体5の周辺からその隙間に対する溶融
封止材の流入が良好に行われる。加えて、切り起こしに
よる開口部8を介して直接的に隙間に溶融封止材が流入
することになる。
During the molding, the injection pressure of the molten sealing material presses the heat dissipation heat conductor 5 toward the island 2, but the bending protrusion 9 due to the cutting and raising in the heat dissipation heat conductor 5 causes the island 2 to move. Since it is in contact with, the heat dissipation heat conductor 5 is held at the predetermined position against the injection pressure. That is, the gap between the heat dissipation heat conductor 5 and the island 2 is not reduced. Therefore, the molten sealing material can be favorably introduced into the gap from the periphery of the heat dissipation heat conductor 5. In addition, the molten sealing material directly flows into the gap through the opening 8 formed by cutting and raising.

【0024】以上の相乗により、アイランド2と放熱用
熱伝導体5との間の隙間に対する溶融封止材の充填を充
分なものとすることができる。その隙間での封止材部分
6aには従来例のようなボイド(空間,気泡)7(図4
参照)は発生しないので、熱伝導率の低下を免れ、放熱
用熱伝導体5による放熱効果を高いものにすることがで
きる。
By the above synergistic effect, the gap between the island 2 and the heat radiating heat conductor 5 can be sufficiently filled with the molten sealing material. Voids (spaces, bubbles) 7 as in the conventional example (see FIG. 4) are formed in the sealing material portion 6a in the gap.
(Refer to FIG. 4) is not generated, the thermal conductivity is avoided from being lowered, and the heat dissipation effect of the heat dissipation heat conductor 5 can be enhanced.

【0025】なお、上記実施例においては、開口部8お
よび曲げ突片9のための切り起こし箇所を4箇所とした
が、この発明はこれに限定されるものではなく、切り起
こしは何箇所であってもよい。1箇所でもよい。また、
1つの切り起こし箇所において、1つの曲げ突片9を切
り起こす場合だけでなく、対向する2辺から2つの曲げ
突片9を切り起こしてもよいし、開口部8が大きいとき
には4辺から切り起こしてもよい。
In the above embodiment, the cut-and-raised portions for the opening 8 and the bending protrusions 9 are four, but the present invention is not limited to this, and the cut-and-raised portions may be any number. It may be. Only one place is required. Also,
Not only in the case where one bending projecting piece 9 is cut and raised in one cut and raised portion, two bending projecting pieces 9 may be cut and raised from two opposite sides, and when the opening 8 is large, cutting is performed from four sides. You may wake it up.

【0026】[0026]

【発明の効果】以上のようにこの発明によれば、放熱用
熱伝導体の切り起こしによって曲げ突片を形成すると同
時に開口部を形成し、曲げ突片をアイランドに当接させ
ることで溶融封止材の射出圧に抗して放熱用熱伝導体を
位置保持してアイランドと放熱用熱伝導体との隙間の減
少を防止し、放熱用熱伝導体周辺から隙間への溶融封止
材の流入を良好化すると同時に、開口部を介しての隙間
への溶融封止材の直接的な流入を促進するようにしたの
で、全体として隙間への溶融封止材の充填を充分良好に
行うことができ、そのアイランドと放熱用熱伝導体との
間の封止材部分にボイドが発生することを防止すること
ができる。したがって、ボイドに起因した熱伝導率の低
下を免れ、放熱効果を高めることができる。
As described above, according to the present invention, a bending protrusion is formed by cutting and raising a heat dissipation heat conductor, an opening is formed at the same time, and the bending protrusion is brought into contact with the island to melt-seal. The heat dissipating heat conductor is held in place against the injection pressure of the stop material to prevent the gap between the island and the heat dissipating heat conductor from decreasing, and the melt sealing material from the periphery of the heat dissipating heat conductor to the gap is prevented. At the same time as improving the inflow, it was designed to promote the direct inflow of the molten sealant into the gap through the opening, so the molten sealant should be sufficiently filled as a whole as a whole. Therefore, it is possible to prevent the occurrence of voids in the sealing material portion between the island and the heat dissipation heat conductor. Therefore, the decrease in the thermal conductivity due to the void can be avoided, and the heat dissipation effect can be enhanced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る半導体装置を示す断面
図である。
FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

【図2】実施例の半導体装置に埋め込まれている放熱用
熱伝導体の斜視図である。
FIG. 2 is a perspective view of a heat dissipation heat conductor embedded in the semiconductor device of the embodiment.

【図3】従来の半導体装置を示す断面図である。FIG. 3 is a sectional view showing a conventional semiconductor device.

【図4】従来の半導体装置に埋め込まれている放熱用熱
伝導体の斜視図である。
FIG. 4 is a perspective view of a heat dissipation heat conductor embedded in a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 アイランド 3 リードフレーム 3a インナーリード 3b アウターリード 4 金属細線 5 放熱用熱伝導体 5a 放熱用熱伝導体の本体部分 5b 放熱用熱伝導体の接合部分 6 封止材 6a アイランドと放熱用熱伝導体との間の封止材部
分 8 開口部 8 曲げ突片 9a 曲げ突片の突出端
1 Semiconductor Chip 2 Island 3 Lead Frame 3a Inner Lead 3b Outer Lead 4 Thin Metal Wire 5 Heat Dissipating Heat Conductor 5a Heat Dissipating Heat Conductor Main Body 5b Heat Dissipating Heat Conductor Joint 6 Encapsulant 6a Island and Heat Dissipating Sealing material portion between the heat conductor 8 Opening 8 Bending protrusion 9a Bending end of the bending protrusion

Claims (1)

【特許請求の範囲】 【請求項1】 アイランドに載置保持させた半導体チッ
プとリードフレームのインナーリードとを金属細線を介
して接続してあるとともに、前記アイランドに小間隔を
隔てて放熱用熱伝導体を対向配置してあり、前記リード
フレームのアウターリードを除いて前記アイランド,半
導体チップ,金属細線,インナーリードおよび放熱用熱
伝導体を封止材で被覆固化してなる半導体装置におい
て、 前記放熱用熱伝導体のうち前記アイランドに対向する箇
所に切り起こしによって開口部を形成するとともに前記
アイランド側に突出する曲げ突片を形成し、その曲げ突
片を前記アイランドに当接させてあることを特徴とする
半導体装置。
Claim: What is claimed is: 1. A semiconductor chip mounted and held on an island and an inner lead of a lead frame are connected to each other via a thin metal wire, and heat is radiated to the island at a small interval. A semiconductor device in which conductors are arranged to face each other, and the island, the semiconductor chip, the thin metal wires, the inner leads, and the heat dissipation heat conductor are covered with a sealing material and solidified except for the outer leads of the lead frame, An opening is formed by cutting and raising in a portion of the heat dissipation heat conductor facing the island, and a bending projecting piece projecting to the island side is formed, and the bending projecting piece is brought into contact with the island. A semiconductor device characterized by.
JP3168185A 1991-07-09 1991-07-09 Semiconductor device Expired - Fee Related JP2882101B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3168185A JP2882101B2 (en) 1991-07-09 1991-07-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3168185A JP2882101B2 (en) 1991-07-09 1991-07-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0521648A true JPH0521648A (en) 1993-01-29
JP2882101B2 JP2882101B2 (en) 1999-04-12

Family

ID=15863362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3168185A Expired - Fee Related JP2882101B2 (en) 1991-07-09 1991-07-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2882101B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534860B2 (en) * 1999-12-06 2003-03-18 Intel Corporation Thermal transfer plate
EP2545584A4 (en) * 2010-03-10 2014-05-21 Altera Corp COATING COMPRISING A SPACED HEAT SINK

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534860B2 (en) * 1999-12-06 2003-03-18 Intel Corporation Thermal transfer plate
EP2545584A4 (en) * 2010-03-10 2014-05-21 Altera Corp COATING COMPRISING A SPACED HEAT SINK

Also Published As

Publication number Publication date
JP2882101B2 (en) 1999-04-12

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