JPH0523074B2 - - Google Patents
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- Publication number
- JPH0523074B2 JPH0523074B2 JP59116019A JP11601984A JPH0523074B2 JP H0523074 B2 JPH0523074 B2 JP H0523074B2 JP 59116019 A JP59116019 A JP 59116019A JP 11601984 A JP11601984 A JP 11601984A JP H0523074 B2 JPH0523074 B2 JP H0523074B2
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- inp
- active layer
- confinement layer
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Geometry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体発光装置、特に波長帯域が0.9
乃至1.7μｍ程度の半導体レーザの特性を向上する
ための構造の改良に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor light emitting device, particularly a semiconductor light emitting device with a wavelength band of 0.9.
This invention relates to structural improvements to improve the characteristics of semiconductor lasers of approximately 1.7 μm to 1.7 μm.
光を情報信号の媒体とする光通信システムは情
報化社会を担う主要な柱であり、半導体発光装置
はこのシステムの光源として最も重要な役割を果
たしている。 Optical communication systems that use light as a medium for information signals are the main pillars of the information society, and semiconductor light emitting devices play the most important role as light sources in these systems.
石英系フアイバによる伝送に適する波長1.1乃
至1.7μｍ程度の帯域の光源として、主としてイン
ジウムガリウム砒素燐（In1-xGaxAsyP1-y）−イ
ンジウム燐（InP）系半導体レーザの開発が進め
られているが、光通信システムに寄せられる期待
に応え、その社会的責任を完うするためには、半
導体発光装置の閾値電流、量子効率等の特性の一
層の改善が要望されている。 Indium gallium arsenide phosphide (In 1-x GaxAsyP 1-y )-indium phosphide (InP) semiconductor lasers are being developed as a light source with a wavelength band of approximately 1.1 to 1.7 μm that is suitable for transmission through silica fibers. However, in order to meet the expectations placed on optical communication systems and fulfill its social responsibility, further improvements in the characteristics of semiconductor light emitting devices, such as threshold current and quantum efficiency, are required.
従来知られているInGaAsP−InP系半導体レー
ザの例を第２図に示す。
FIG. 2 shows an example of a conventionally known InGaAsP-InP semiconductor laser.
同図ａにおいて、１１はｎ型InP基板、１２は
ｎ型InP閉じ込め層、１３はInGaAsP又は
InGaAs活性層、１５はｐ型InP閉じ込め層、１
６はｐ型InGaAsPコンタクト層、１７はｐ型InP
層、１８はｎ型InP層、１９はｐ側電極、２０は
ｎ側電極を示し、また同図ｂは発光領域すなわち
活性層１３とこれを狭む閉じ込め層１２及び１５
とのエネルギーバンドダイヤグラムを示す。 In the same figure a, 11 is an n-type InP substrate, 12 is an n-type InP confinement layer, and 13 is InGaAsP or
InGaAs active layer, 15 p-type InP confinement layer, 1
6 is p-type InGaAsP contact layer, 17 is p-type InP
18 is an n-type InP layer, 19 is a p-side electrode, and 20 is an n-side electrode. FIG.
shows the energy band diagram of
この活性層１３と閉じ込め層１２及び１５とか
らなるダブルヘテロ接合構造に、順方向すなわち
ｐ側を高電位とするバイアス電圧を印加すれば、
電子はｎ型閉じ込め層１２から発生層１３に注入
されてｐ型閉じ込め層１５との間に伝導帯底のエ
ネルギー準位差ΔEcに阻止され、正孔はｐ型閉じ
込め層１５から活性層１３に注入されてｎ型閉じ
込め層１２との間の価電子帯上端のエネルギー順
位差ΔEvに阻止されるため、活性層１３に電子と
正孔とが閉じ込められてここで発光再結合を生じ
光出力が得られる。 If a bias voltage is applied to the double heterojunction structure consisting of the active layer 13 and the confinement layers 12 and 15 with a high potential in the forward direction, that is, on the p side,
Electrons are injected from the n-type confinement layer 12 to the generation layer 13 and are blocked by the energy level difference ΔEc at the bottom of the conduction band between the n-type confinement layer 15 and the p-type confinement layer 15, and holes are injected from the p-type confinement layer 15 to the active layer 13. Since the electrons and holes are injected and blocked by the energy rank difference ΔEv at the top of the valence band with the n-type confinement layer 12, electrons and holes are confined in the active layer 13, where they undergo radiative recombination and the optical output is reduced. can get.
上述の従来例において、活性層１３が
In0.53Ga0.47Asである場合に、InP閉じ込め層１
２及び１５との間の伝導帯底のエネルギー準位差
ΔEc≒0.2eV、価電子帯上端のエネルギー準位差
ΔEv≒0.5eVであり、活性層１３がIn1-x
GaxAsyP1-y（ｙ≠１）である場合にはΔEc及び
ΔEvはこれより小さくなる。 In the conventional example described above, the active layer 13 is
InP confinement layer 1 when In0.53Ga0.47As
2 and 15, the energy level difference ΔEc≒0.2 eV at the bottom of the conduction band, and the energy level difference ΔEv≒0.5 eV at the top of the valence band, and the active layer 13 is In 1-x
When GaxAsyP 1-y (y≠1), ΔEc and ΔEv are smaller than this.
本従来例においてはこの様に伝導帯底のエネル
ギー準位差ΔEcが小さいために、電子に対する閉
じ込め効果が充分に得られていない。 In this conventional example, since the energy level difference ΔEc at the bottom of the conduction band is small, a sufficient electron confinement effect cannot be obtained.
また前記従来例と同様の構造で、活性層１３の
厚さを量子論的寸法まで薄くした量子井戸半導体
レーザが知られている。この様に活性層１３の厚
さをキヤリアのド・ブロイ波長程度以下とすれ
ば、波動性の効果によつて厚さ方向の運動が量子
化された２次元状態となり、この２次元状態では
エネルギーは離散値をとり状態密度は階段状とな
る。 Further, a quantum well semiconductor laser is known which has a structure similar to that of the conventional example, but in which the thickness of the active layer 13 is reduced to quantum theoretical dimensions. In this way, if the thickness of the active layer 13 is set to be less than or equal to the de Broglie wavelength of the carrier, it becomes a two-dimensional state in which the motion in the thickness direction is quantized due to the wave effect, and in this two-dimensional state, the energy takes discrete values, and the density of states becomes step-like.
そのエネルギー準位は量子化されない３次元自
由キヤリアより大きくなるが、特に質量の小さい
電子のエネルギー準位が大きく離散する。 Its energy level is larger than that of a three-dimensional free carrier that is not quantized, but the energy level of electrons, which have a small mass, becomes highly discrete.
しかしながらｐ型閉じ込め層１５がInPである
場合には、その活性層１３との間のΔEcが前述の
如く約0.2eVであるために、量子化された電子の
閉じ込めを効果的に行なうことが困難である。 However, when the p-type confinement layer 15 is made of InP, the ΔEc between it and the active layer 13 is approximately 0.2 eV as described above, making it difficult to effectively confine quantized electrons. It is.
この問題点に対処するためにｐ型の閉じ込め層
をInPに代えて、InP単結晶に格子整合するイン
ジウムアルミニウム砒素（In0.52Al0.48As）によ
つて形成すれば、In0.53Ga0.47As活性層との間
のΔEcを約0.5eVまで大きくなし得るが、未だ充
分ではなく更に大きくすることが望ましい。 To deal with this problem, if the p-type confinement layer is replaced with InP and made of indium aluminum arsenide (In0.52Al0.48As), which has a lattice match to the InP single crystal, the In0.53Ga0.47As active layer Although it is possible to increase the ΔEc between the two and the two to about 0.5 eV, it is still not sufficient and it is desirable to increase it further.
以上説明した如く、InP基板に格子整合する半
導体発光装置の電子に対する閉じ込め効果が従来
不充分であつて、活性層とｐ型の閉じ込め層との
間の伝導帯底のエネルギー準位差ΔEcを更に大き
くすることが必要とされている。
As explained above, the electron confinement effect of semiconductor light emitting devices lattice-matched to an InP substrate is conventionally insufficient, and the energy level difference ΔEc at the bottom of the conduction band between the active layer and the p-type confinement layer is It is necessary to make it bigger.
前記の問題点は、インジウム燐化合物半導体基
板と、該基板に格子整合する発光領域とを備え
て、導電型がｐ型の閉じ込め層がインジウムガリ
ウムアルミニウム砒素化合物半導体よりなり、該
閉じ込め層は、バンドギヤツプが該発光領域に向
かつて段階的に増加する超格子構造を有するもの
であり、更に該超格子構造の構成層のうち該発光
領域に隣接する層は、該発光領域に対し実質的に
格子整合しないものである本発明による半導体発
光装置により解決される。
The above-mentioned problem is that the confinement layer is made of an indium gallium aluminum arsenide compound semiconductor and has a p-type conductivity, and the confinement layer is made of an indium gallium aluminum arsenide compound semiconductor. has a superlattice structure in which the superlattice structure gradually increases toward the light-emitting region, and furthermore, a layer adjacent to the light-emitting region among the constituent layers of the superlattice structure is substantially lattice-matched to the light-emitting region. This problem is solved by the semiconductor light emitting device according to the present invention, which does not.
本発明は、InP基板に格子整合する
In0.53Ga0.47As等よりなる発光領域すなわち活
性層に対して、これに格子整合する半導体材料で
は得られない大きさΔEcの値を格子不整合のｐ型
閉じ込め層によつて実現し、格子不整合によつて
結晶性が損なわれないために、該閉じ込め層を活
性層側の接合界面から遠ざかるに従つて格子不整
合が減小する歪み超格子構造とする。
The present invention provides lattice matching to InP substrates.
A lattice-mismatched p-type confinement layer achieves a value of ΔEc that cannot be obtained with a lattice-matched semiconductor material for the light-emitting region, that is, the active layer, made of In0.53Ga0.47As, etc. In order that crystallinity is not impaired by matching, the confinement layer has a strained superlattice structure in which the lattice mismatch decreases as it moves away from the junction interface on the active layer side.
この本発明の閉じ込め層を実現する半導体材料
としては、インジウムガリウムアルミニウム砒素
（In1-x-yGaxAlyAs）化合物を用いることができ
る。InGaAlAs化合物半導体はその組成によつて
はInP基板上にエピタキシヤル成長することも可
能であるが（中嶋及び秋田、Journal of crystal
Growth54（1981）232−238）、本発明の閉じ込め
層の活性層側の界面では、後に実施例に示す如
く、エネルギーバンドギヤツプが大きい格子不整
合の組成とし、組成を次第に変化させて格子定数
がInPに合致するに到る歪み超格子構造を形成す
る。 As a semiconductor material for realizing the confinement layer of the present invention, an indium gallium aluminum arsenide (In 1-xy GaxAlyAs) compound can be used. Depending on its composition, InGaAlAs compound semiconductors can be epitaxially grown on InP substrates (Nakajima and Akita, Journal of Crystal
Growth 54 (1981) 232-238), the interface on the active layer side of the confinement layer of the present invention is made of a lattice mismatched composition with a large energy band gap, as shown in the examples later, and the composition is gradually changed to create a lattice-mismatched composition. A strained superlattice structure whose constant matches that of InP is formed.
なお上述の本発明による閉じ込め層は、活性層
から電子が流出しようとする側、すなわち導電型
がｐ型の閉じ込め層に適用する。 The confinement layer according to the present invention described above is applied to the side from which electrons are to flow out from the active layer, that is, the confinement layer whose conductivity type is p-type.
以下本発明を実施例により具体的に説明する。 The present invention will be specifically explained below using examples.
第１図ａは本発明の実施例を示す断面図、同図
ｂはそのエネルギーバンドダイヤグラムである。 FIG. 1a is a sectional view showing an embodiment of the present invention, and FIG. 1b is an energy band diagram thereof.
図において、１はｎ型InP基板、２はｎ型InP
閉じ込め層、３はIn0.53Ga0.47As活性層、４は
後にその詳細を説明するIn1-x-yGaxAlyAsよりな
るｐ型の歪み超格子構造、５はｐ型
In0.52Al0.48As層、６はｐ型InGaAsPコンタク
ト層、７はｐ型InP層、８はｎ型InP層、９はｐ
側電極、１０はｎ側電極を示す。 In the figure, 1 is an n-type InP substrate, 2 is an n-type InP substrate
Confinement layer, 3 is In0.53Ga0.47As active layer, 4 is p-type strained superlattice structure made of In 1-xy GaxAlyAs, the details of which will be explained later, 5 is p-type
In0.52Al0.48As layer, 6 is p-type InGaAsP contact layer, 7 is p-type InP layer, 8 is n-type InP layer, 9 is p-type
10 indicates an n-side electrode.
本実施例では、ｐ型の歪み超格子構造４とｐ型
InAlAs層５とがｐ型の閉じ込め層を構成する。
その他の部分においては前記従来例と同等であ
る。 In this example, a p-type strained superlattice structure 4 and a p-type
The InAlAs layer 5 constitutes a p-type confinement layer.
The other parts are the same as the conventional example.
本実施例の歪み超格子構造４は組成の異なる複
数のIn1-x-yGaxAlyAs層を積層した構造をもち、
例えば活性層３側から順に下記の層４ａ乃至４ｃ
からなる。 The strained superlattice structure 4 of this example has a structure in which a plurality of In 1-xy GaxAlyAs layers with different compositions are laminated,
For example, the following layers 4a to 4c in order from the active layer 3 side:
Consisting of
４ａ；ｘ＝0.20，ｙ＝0.47
４ｂ；ｘ＝0.14，ｙ＝0.47
４ｃ；ｘ＝0.07，ｙ＝0.47
ただし各層の厚さは約20nmとして
In0.53Ga0.47As活性層３上に順次成長している。 4a; x = 0.20, y = 0.47 4b; x = 0.14, y = 0.47 4c; x = 0.07, y = 0.47 However, the thickness of each layer is approximately 20 nm.
In0.53Ga0.47As is grown sequentially on the active layer 3.
前記In0.33Ga0.20Al0.47層４ａは
In0.53Ga0.47As活性層３との間の伝導帯底のエ
ネルギー準位差ΔEcが約0.8eVとなり、従来知ら
れているIn0.52Al0.48As閉じ込め層の約0.5eVよ
り大きい値が実現されている。 The In0.33Ga0.20Al0.47 layer 4a is
The energy level difference ΔEc at the bottom of the conduction band with the In0.53Ga0.47As active layer 3 is approximately 0.8 eV, which is larger than the approximately 0.5 eV of the conventionally known In0.52Al0.48As confinement layer. There is.
層４ｂ乃至４ｃは層４ａとInPとの中間の格子
定数をもち、この歪み超格子構造４を介してInP
に格子整合するｐ型In0.52Al0.48As層５につなぐ
ことによつて、先に述べた如く結晶性が損なわれ
ることなく半導体基体を形成することができる。 The layers 4b to 4c have lattice constants intermediate between those of the layer 4a and InP, and InP is formed through this strained superlattice structure 4.
By connecting it to the p-type In0.52Al0.48As layer 5 which is lattice-matched, a semiconductor substrate can be formed without impairing the crystallinity as described above.
本発明によりΔEcを増大することの効果は、活
性層３内で電子エネルギー準位が大きく離散する
量子井戸半導体レーザで最も顕著であるが、活性
層３の厚さが量子論的寸法より厚い通常の半導体
発光装置についても大きい効果が得られる。この
場合には目的とする波長帯域に従つて例えば
In1-xGaxAsyP1-yの組成が選択される。 The effect of increasing ΔEc according to the present invention is most remarkable in quantum well semiconductor lasers in which the electronic energy levels are largely discrete within the active layer 3, but in general, the thickness of the active layer 3 is thicker than the quantum theoretical dimension. Great effects can also be obtained for semiconductor light emitting devices. In this case, for example, according to the target wavelength band,
A composition of In 1-x GaxAsyP 1-y is selected.
更に活性層３はInGaAs乃至InGaAsPに限ら
ず、InPに格子整合可能な他の化合物半導体、例
えばInAlAs，InGaAlAs等であつてもよい。 Furthermore, the active layer 3 is not limited to InGaAs or InGaAsP, but may be other compound semiconductors that can be lattice matched to InP, such as InAlAs and InGaAlAs.
以上説明した如く本発明によれば、InP基板を
用いる半導体発光装置の電子の閉じ込め効果を大
きく改善することができ、閾値電流の低減、量子
効率等の特性が向上する。その結果石英系フアイ
バで伝送する光通信システム等の進展に寄与する
ことができる。
As described above, according to the present invention, the electron confinement effect of a semiconductor light emitting device using an InP substrate can be greatly improved, and characteristics such as threshold current reduction and quantum efficiency are improved. As a result, it is possible to contribute to the development of optical communication systems that transmit data using silica fibers.
第１図ａは本発明の実施例の断面図、第１図ｂ
はそのエネルギーバンドダイヤグラム、第２図ａ
は従来例の断面図、第２図ｂはそのエネルギーバ
ンドダイヤグラムを示す。
図において、１はｎ型InP基板、２はｎ型InP
閉じ込め層、３はInGaAs活性層、４はｐ型歪み
超格子構造、４ａ，４ｂ及び４ｃは歪み超格子構
造を形成する。InGaAlAs層、５はｐ型InAlAs
層、６はｐ型InGaAsP層、７はｐ型InP層、８は
ｎ型InP層、９はｐ側電極、１０はｎ側電極を示
す。
Figure 1a is a sectional view of an embodiment of the invention, Figure 1b
is its energy band diagram, Figure 2a
is a sectional view of the conventional example, and FIG. 2b shows its energy band diagram. In the figure, 1 is an n-type InP substrate, 2 is an n-type InP substrate
A confinement layer 3 forms an InGaAs active layer, 4 forms a p-type strained superlattice structure, and 4a, 4b and 4c form a strained superlattice structure. InGaAlAs layer, 5 is p-type InAlAs
6 is a p-type InGaAsP layer, 7 is a p-type InP layer, 8 is an n-type InP layer, 9 is a p-side electrode, and 10 is an n-side electrode.
Claims (1)
導体よりなり導電型がｐ型である閉じ込め層とを
備え、 該閉じ込め層は、バンドキヤツプが該発光領域
に向かつて増加する超格子構造を有するものであ
り、更に該超格子構造の構成層のうち該発光領域
に隣接する層は、該発光領域に対し実質的に格子
整合しないものであることを特徴とする半導体発
光装置。[Claims] 1. An indium phosphorus compound semiconductor substrate, a light emitting region lattice-matched to the substrate, and a confinement layer made of an indium gallium aluminum arsenide compound semiconductor and having a p-type conductivity, the confinement layer comprising: It has a superlattice structure in which the bandcap increases toward the light-emitting region, and further, among the constituent layers of the superlattice structure, layers adjacent to the light-emitting region are not substantially lattice-matched to the light-emitting region. A semiconductor light emitting device characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11601984A JPS60260181A (en) | 1984-06-06 | 1984-06-06 | Semiconductor luminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11601984A JPS60260181A (en) | 1984-06-06 | 1984-06-06 | Semiconductor luminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60260181A JPS60260181A (en) | 1985-12-23 |
| JPH0523074B2 true JPH0523074B2 (en) | 1993-03-31 |
Family
ID=14676780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11601984A Granted JPS60260181A (en) | 1984-06-06 | 1984-06-06 | Semiconductor luminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60260181A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07105552B2 (en) * | 1986-06-11 | 1995-11-13 | 富士通株式会社 | Semiconductor light emitting device |
| JPS6323384A (en) * | 1986-07-16 | 1988-01-30 | Sony Corp | Double hetero-junction semiconductor laser |
| JPS6327804A (en) * | 1986-07-22 | 1988-02-05 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JP2545756B2 (en) * | 1987-07-07 | 1996-10-23 | 大日本インキ化学工業株式会社 | Conductive concrete |
| JP2716717B2 (en) * | 1988-02-26 | 1998-02-18 | 株式会社東芝 | Semiconductor laser device |
| JP2763102B2 (en) * | 1988-02-26 | 1998-06-11 | 株式会社東芝 | Semiconductor laser device |
| JPH01220490A (en) * | 1988-02-29 | 1989-09-04 | Toshiba Corp | Semiconductor laser element and manufacture thereof |
| JPH02248095A (en) * | 1989-03-22 | 1990-10-03 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Semiconductor laser |
| JPH0482286A (en) * | 1990-07-25 | 1992-03-16 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Semiconductor laser |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130456U (en) * | 1981-02-06 | 1982-08-14 | ||
| US4438446A (en) * | 1981-05-29 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Double barrier double heterostructure laser |
-
1984
- 1984-06-06 JP JP11601984A patent/JPS60260181A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60260181A (en) | 1985-12-23 |
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