JPH0523197B2 - - Google Patents
Info
- Publication number
- JPH0523197B2 JPH0523197B2 JP60175137A JP17513785A JPH0523197B2 JP H0523197 B2 JPH0523197 B2 JP H0523197B2 JP 60175137 A JP60175137 A JP 60175137A JP 17513785 A JP17513785 A JP 17513785A JP H0523197 B2 JPH0523197 B2 JP H0523197B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- substrate
- optical recording
- nio
- recording layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- -1 posaetherimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
(産業上の利用分野)
本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体に関し、さらに詳しくは
集光したレーザ光の熱作用により薄膜にビツトを
形成して記録する光記録媒体に関するものであ
る。
(従来の技術)
レーザ光によつて情報を媒体に記録し、かつ再
生する追記型光デイスクメモリは、記録密度が高
いことから大容量記録装置として優れた特徴を有
している。このような追記型光デイスクメモリの
記録媒体としては、低融点金属であるTe、Biあ
るいはそれらを含有する合金が使用されている
(例えば、特公昭54−15483号)。
(発明が解決しようとする問題点)
しかし、低融点金属(とくに高感度であるSn)
は、記録再生信号の品質が悪く実用に供すること
はできなかつた。
本発明の目的は、記録感度が高く、かつ信号品
質の良好な光記録媒体に用いる光記録材料を提供
することにある。
(問題点を解決するための手段)
本発明の光記録材料は光記録媒体の記録層に用
いる光記録材料であつてスズを体積率で30%以上
含有し、加えて、ニツケル酸化物を体積率で20%
以上含有して構成されることを特徴とする。
(作用)
本発明による記録膜は体積率で30%以上のスズ
に加えて体積率で20%以上のニツケル酸化物を不
可欠な構成要素として含んでいる。スズは低融点
の半金属のため高い記録感度を有している。しか
し、材料の結晶性に起因して表面性が悪いので、
未記録ノイズが大きく問題であり実用に供するこ
とはできない。本発明者らは体積率で20%以上の
ニツケル酸化物をスズに含有させることにより記
録層の表面性が著しく改善されることを見出し、
本発明に到つたものである。
記録層の膜層は100〜1000Å程度が記録感度、
信号品質の点で望ましく、とくに150〜500Åが望
ましい。
記録層はスズとニツケル酸化物のみの混合物で
も充分に優れた光記録媒体特性を有するが、更に
耐候性を向上させたり、反射率を所定の値に調整
するためには第3物質等を含有させてもよい。第
3物質としては、炭素、アルミニウム、チタン、
クロム、鉄、コバルト、ニツケル、銅、亜鉛、ゲ
ルマニウム、ジルコニウム、ニオブ、モリブデ
ン、ロジウム、パラジウム、銀、タンタル、タン
グステン、白金、金のうち1以上が望ましい。こ
れらは体積率で約10〜15%以下で効果を示すもの
が多いが、物質によつてはこれらより多く含ませ
ることもある。
図は光記録媒体の一例を示す断面図である。1
は基板、2は記録層を表わす。
基板としては種々のものを使用できるが、一般
には合成樹脂、ガラス、磁器が望ましい。合成樹
脂としては、ポリメチルメタクリレート等のアク
リル樹脂、ポリカーボネート、ポサエーテルイミ
ド、ポリサルホン、エポキシ樹脂、塩化ビニル樹
脂等がある。基板にはその上に断熱層やスムージ
ング層を設けてもよい。基板の形状は円板状、シ
ート状、テープ状とすることができる。
記録層への情報の記録は、記録層にビツトを形
成することによりなされる。円板状の基板を用い
るデイスク媒体では、ビツトは同心円状又はスパ
イラル状の多数のトラツク形成するように記録さ
れる。多数のトラツクを一定間隔で精度よく記録
するには、通常基板上に光の案内溝が設けられ
る。ビーム径程度の溝に光が入射すると光が回折
される。ビーム中心が溝からずれるにつれて回折
光強度の空間分布が異なり、これを検出してビー
ムを溝の中心に入射させるようにサーボ系を構成
できる。通常溝の幅は0.3〜1.2μm、その深さは使
用する記録再生レーザ波長の1/12〜1/4の範囲に
設定される。
実施例 1
以下、本発明の実施例について説明する。
内径15mm、外径120mm、厚さ1.2mmの案内溝付き
アクリル樹脂デイスク基板を真空蒸着装置内に入
れ、2×10-5Torr以下に排気した。蒸発源とし
ては、抵抗加熱用ボートにSnを入れ、電子ビー
ム加熱用るつぼにNiOを入れた。水晶振動子式膜
厚モニターを用いてそれぞれの蒸着物質の蒸着速
度を制御しながら共蒸着することにより、デイス
ク基板上に記録層を形成した。
第1表に、350Å厚の記録層のNiOの体積含有
率を変化させた場合に、基板入射反射率(波長
8300Å)、未記録ノイズレベル、信号対雑音比
(C/N)がどのように変化するかを示す。ここ
で、記録再生に用いた半導体レーザの波長は8300
Åであり、信号周波数は1.2MHz、バンド幅は
30KHz、媒体の線速度は5m/secである。反射率
はNiOの含有率が増大するにしたがつて低下する
傾向となり、スズの含有率が30%未満では反射率
が10%に達しないのでフオーカスサーボに悪影響
を与え実用上問題となる。未記録ノイズレベル
は、NiOを添加することにより急激に低下し、20
%以上のNiOの含有で実用の域に達する。
C/Nは、NiOの含有量が20%よりも少ない場
合にはノイズが大きいためにC/Nが悪く、Sn
の含有量が30%よりも少ない場合には記録感度不
足のためにC/Nが悪い。したがつて、NiOの体
積含有率が20%以上でかつSnの体積含有率が30
%以上が実用可能な組成範囲である。
膜厚が350Å以外の場合の実施例を第2表に示
す。この場合においても上記組成範囲が良好であ
ることがわかる。
(Industrial Application Field) The present invention relates to an optical recording medium on which information can be recorded and reproduced using a laser beam, and more specifically to an optical recording medium that forms bits on a thin film by the thermal action of a focused laser beam. It is related to recording media. (Prior Art) A write-once optical disk memory that records and reproduces information on a medium using a laser beam has an excellent feature as a large-capacity recording device because of its high recording density. As a recording medium for such a write-once optical disk memory, low melting point metals such as Te and Bi or alloys containing them are used (for example, Japanese Patent Publication No. 15483/1983). (Problem to be solved by the invention) However, low melting point metals (especially Sn, which has high sensitivity)
could not be put to practical use due to the poor quality of recording and reproduction signals. An object of the present invention is to provide an optical recording material for use in an optical recording medium that has high recording sensitivity and good signal quality. (Means for Solving the Problems) The optical recording material of the present invention is an optical recording material used for the recording layer of an optical recording medium, which contains tin in a volume percentage of 30% or more, and in addition, nickel oxide is contained in a volume ratio of 30% or more. rate of 20%
It is characterized by containing the above. (Function) The recording film according to the present invention contains tin with a volume fraction of 30% or more and nickel oxide with a volume fraction of 20% or more as an essential component. Tin has high recording sensitivity because it is a semimetal with a low melting point. However, the surface properties are poor due to the crystallinity of the material, so
Unrecorded noise is a big problem, and it cannot be put to practical use. The present inventors have found that the surface properties of the recording layer are significantly improved by incorporating 20% or more of nickel oxide in volume percentage in tin,
This has led to the present invention. The film layer of the recording layer has a recording sensitivity of about 100 to 1000 Å.
It is desirable from the point of view of signal quality, particularly 150 to 500 Å. The recording layer has sufficiently excellent optical recording medium characteristics even if it is a mixture of tin and nickel oxide, but in order to further improve the weather resistance or adjust the reflectance to a predetermined value, it is necessary to contain a third substance, etc. You may let them. Third substances include carbon, aluminum, titanium,
One or more of chromium, iron, cobalt, nickel, copper, zinc, germanium, zirconium, niobium, molybdenum, rhodium, palladium, silver, tantalum, tungsten, platinum, and gold is desirable. Most of these substances are effective at a volume ratio of about 10 to 15% or less, but depending on the substance, they may be contained in a larger amount. The figure is a sectional view showing an example of an optical recording medium. 1
2 represents the substrate, and 2 represents the recording layer. Although various substrates can be used, synthetic resin, glass, and porcelain are generally preferred. Examples of synthetic resins include acrylic resins such as polymethyl methacrylate, polycarbonate, posaetherimide, polysulfone, epoxy resins, and vinyl chloride resins. The substrate may be provided with a heat insulating layer or a smoothing layer thereon. The shape of the substrate can be a disk, a sheet, or a tape. Information is recorded on the recording layer by forming bits on the recording layer. In a disk medium using a disk-shaped substrate, bits are recorded so as to form a large number of concentric or spiral tracks. In order to accurately record a large number of tracks at regular intervals, light guide grooves are usually provided on the substrate. When light enters a groove about the diameter of the beam, it is diffracted. As the beam center shifts from the groove, the spatial distribution of the diffracted light intensity changes, and a servo system can be configured to detect this and direct the beam to the center of the groove. Usually, the width of the groove is set to 0.3 to 1.2 μm, and the depth is set to a range of 1/12 to 1/4 of the wavelength of the recording/reproducing laser used. Example 1 Examples of the present invention will be described below. An acrylic resin disk substrate with a guide groove having an inner diameter of 15 mm, an outer diameter of 120 mm, and a thickness of 1.2 mm was placed in a vacuum deposition apparatus, and the atmosphere was evacuated to 2×10 -5 Torr or less. As evaporation sources, Sn was placed in a resistance heating boat and NiO was placed in an electron beam heating crucible. A recording layer was formed on the disk substrate by co-evaporation while controlling the deposition rate of each deposition substance using a crystal resonator type film thickness monitor. Table 1 shows the substrate incident reflectance (wavelength
8300 Å), shows how the unrecorded noise level and signal-to-noise ratio (C/N) change. Here, the wavelength of the semiconductor laser used for recording and reproduction is 8300
Å, the signal frequency is 1.2MHz, and the bandwidth is
The linear velocity of the medium is 30KHz and 5m/sec. The reflectance tends to decrease as the NiO content increases, and if the tin content is less than 30%, the reflectance does not reach 10%, which adversely affects the focus servo and poses a practical problem. The unrecorded noise level decreased sharply by adding NiO, and
% or more of NiO reaches the practical level. C/N is poor when the NiO content is less than 20% due to large noise, and Sn
If the content is less than 30%, the C/N is poor due to insufficient recording sensitivity. Therefore, if the volume content of NiO is 20% or more and the volume content of Sn is 30%,
% or more is a practical composition range. Examples in which the film thickness is other than 350 Å are shown in Table 2. It can be seen that in this case as well, the above composition range is favorable.
【表】【table】
【表】【table】
【表】
実施例 2
抵抗加熱用ボートにSnを入れ、電子ビーム加
熱用るつぼにNiOを入れもう一つの電子ビーム加
熱用るつぼにCrを入れ、体積率で60%、35%、
5%で共蒸着してアクリルデイスク基板上に記録
層を形成した。実施例1と同様にして記録再生し
たところC/N約50dBと良好な記録ができた。
実施例 3
抵抗加熱用ボートにSnを入れ、電子ビーム加
熱用るつぼにNiOを入れ、もう一つの電子ビーム
加熱用るつぼに重量%で80対20のNi・Cr合金を
入れ、体積率で55%、40%、5%で共蒸着してア
クリルデイスク基板上に記録層を形成した。実施
例1と同様にして記録再生したところC/N約
50dBと良好な記録ができた。
実施例 4
牴抗加熱用ボートにSnを入れ、電子ビーム加
熱用るつぼにNiOを入れ、もう一つの電子ビーム
加熱用るつぼに重量%で70対25対5のFe・Cr・
Al合金を入れ、体積率で55%、40%、5%で共
蒸着してポリカーボネート基板上に記録層を形成
した。実施例1と同様にして記録再生したとこ
ろ、C/N約49dBと良好な記録ができた。
(発明の効果)
上記実施例から明らかなように、本発明により
記録感度が高くかつ信号品質の良好な光記録材料
が得られる。[Table] Example 2 Sn was put in a resistance heating boat, NiO was put in an electron beam heating crucible, Cr was put in another electron beam heating crucible, and the volume percentage was 60%, 35%,
A recording layer was formed on the acrylic disk substrate by codeposition at 5%. Recording and reproduction were performed in the same manner as in Example 1, and good recording was achieved with a C/N of about 50 dB. Example 3 Sn was put in a resistance heating boat, NiO was put in a crucible for electron beam heating, and Ni/Cr alloy with a ratio of 80:20 by weight was put in another crucible for electron beam heating, and the volume ratio was 55%. A recording layer was formed on the acrylic disk substrate by co-evaporation with , 40% and 5%. When recording and reproducing in the same manner as in Example 1, the C/N was approximately
Good recording was achieved at 50dB. Example 4 Sn was put into a boat for resistance heating, NiO was put into a crucible for electron beam heating, and Fe/Cr/Cr was put into another crucible for electron beam heating in a ratio of 70:25:5 by weight.
A recording layer was formed on a polycarbonate substrate by co-depositing an Al alloy at a volume ratio of 55%, 40%, and 5%. Recording and reproduction were performed in the same manner as in Example 1, and good recording was achieved with a C/N of approximately 49 dB. (Effects of the Invention) As is clear from the above examples, the present invention provides an optical recording material with high recording sensitivity and good signal quality.
図は光記録媒体の断面図である。 図において、1は基板、2は記録層を示す。 The figure is a cross-sectional view of an optical recording medium. In the figure, 1 indicates a substrate and 2 indicates a recording layer.
Claims (1)
つて、スズを体積率で30%以上含有し、加えてニ
ツケル酸化物を体積率で20%以上含有してなるこ
とを特徴とする光記録材料。1. Optical recording material used in the recording layer of an optical recording medium, characterized by containing tin in a volume percentage of 30% or more, and additionally containing nickel oxide in a volume percentage of 20% or more. material.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60175137A JPS6233686A (en) | 1985-08-08 | 1985-08-08 | Light recording material |
| US06/893,040 US4763139A (en) | 1985-08-08 | 1986-08-01 | Optical information storage medium |
| EP86110786A EP0211435B1 (en) | 1985-08-08 | 1986-08-04 | Optical information storage medium |
| DE8686110786T DE3679249D1 (en) | 1985-08-08 | 1986-08-04 | OPTICAL INFORMATION STORAGE MEDIUM. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60175137A JPS6233686A (en) | 1985-08-08 | 1985-08-08 | Light recording material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6233686A JPS6233686A (en) | 1987-02-13 |
| JPH0523197B2 true JPH0523197B2 (en) | 1993-03-31 |
Family
ID=15990934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60175137A Granted JPS6233686A (en) | 1985-08-08 | 1985-08-08 | Light recording material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6233686A (en) |
-
1985
- 1985-08-08 JP JP60175137A patent/JPS6233686A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6233686A (en) | 1987-02-13 |
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