JPH05243079A - Paste for external electrode of laminar ceramic capacitor, and capacitor using the same - Google Patents
Paste for external electrode of laminar ceramic capacitor, and capacitor using the sameInfo
- Publication number
- JPH05243079A JPH05243079A JP4044611A JP4461192A JPH05243079A JP H05243079 A JPH05243079 A JP H05243079A JP 4044611 A JP4044611 A JP 4044611A JP 4461192 A JP4461192 A JP 4461192A JP H05243079 A JPH05243079 A JP H05243079A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- silver
- copper
- external electrode
- ceramic capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims description 34
- 239000003990 capacitor Substances 0.000 title description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 69
- 239000004332 silver Substances 0.000 claims abstract description 69
- 239000000843 powder Substances 0.000 claims abstract description 59
- 239000010949 copper Substances 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 32
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 18
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 11
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 9
- 229910052745 lead Inorganic materials 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 68
- 239000002245 particle Substances 0.000 claims description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 33
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 14
- 238000010304 firing Methods 0.000 claims description 13
- 239000001856 Ethyl cellulose Substances 0.000 claims description 12
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 12
- 229920001249 ethyl cellulose Polymers 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 11
- 239000004925 Acrylic resin Substances 0.000 claims description 10
- 229920000178 Acrylic resin Polymers 0.000 claims description 10
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 7
- 239000002003 electrode paste Substances 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 229920000180 alkyd Polymers 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 4
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 4
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 4
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 4
- 229920000609 methyl cellulose Polymers 0.000 claims description 4
- 239000001923 methylcellulose Substances 0.000 claims description 4
- 235000010981 methylcellulose Nutrition 0.000 claims description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000002023 wood Substances 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 11
- 239000012298 atmosphere Substances 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 7
- 229910052582 BN Inorganic materials 0.000 abstract description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 24
- 239000012299 nitrogen atmosphere Substances 0.000 description 23
- 239000000155 melt Substances 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000032683 aging Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 229910002113 barium titanate Inorganic materials 0.000 description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- -1 Argon ion Chemical class 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003981 vehicle Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- WUOACPNHFRMFPN-VIFPVBQESA-N (R)-(+)-alpha-terpineol Chemical compound CC1=CC[C@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-VIFPVBQESA-N 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 3
- 229940112669 cuprous oxide Drugs 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- YEOCHZFPBYUXMC-UHFFFAOYSA-L copper benzoate Chemical compound [Cu+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 YEOCHZFPBYUXMC-UHFFFAOYSA-L 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 229940055577 oleyl alcohol Drugs 0.000 description 2
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 239000004034 viscosity adjusting agent Substances 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
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- JLPULHDHAOZNQI-ZTIMHPMXSA-N 1-hexadecanoyl-2-(9Z,12Z-octadecadienoyl)-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCCCCCC\C=C/C\C=C/CCCCC JLPULHDHAOZNQI-ZTIMHPMXSA-N 0.000 description 1
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- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- VPJOGDPLXNTKAZ-UHFFFAOYSA-N 2-methylpropanoic acid;2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)=O.CC(C)C(O)C(C)(C)CO VPJOGDPLXNTKAZ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- JXSRRBVHLUJJFC-UHFFFAOYSA-N 7-amino-2-methylsulfanyl-[1,2,4]triazolo[1,5-a]pyrimidine-6-carbonitrile Chemical compound N1=CC(C#N)=C(N)N2N=C(SC)N=C21 JXSRRBVHLUJJFC-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
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- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 229910020444 SiO2—PbO Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- GXROCGVLAIXUAF-UHFFFAOYSA-N copper octan-1-ol Chemical compound [Cu].CCCCCCCCO GXROCGVLAIXUAF-UHFFFAOYSA-N 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- SVOAENZIOKPANY-CVBJKYQLSA-L copper;(z)-octadec-9-enoate Chemical compound [Cu+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O SVOAENZIOKPANY-CVBJKYQLSA-L 0.000 description 1
- CMRVDFLZXRTMTH-UHFFFAOYSA-L copper;2-carboxyphenolate Chemical compound [Cu+2].OC1=CC=CC=C1C([O-])=O.OC1=CC=CC=C1C([O-])=O CMRVDFLZXRTMTH-UHFFFAOYSA-L 0.000 description 1
- JDPSPYBMORZJOD-UHFFFAOYSA-L copper;dodecanoate Chemical compound [Cu+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O JDPSPYBMORZJOD-UHFFFAOYSA-L 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229940083466 soybean lecithin Drugs 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000006188 syrup Substances 0.000 description 1
- 235000020357 syrup Nutrition 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、導電性、耐酸化性、耐
はんだ食われに優れ、且つ内部電極とのマッチング性に
優れた積層セラミックコンデンサー外部電極用ペースト
並びに該ペーストを用いた積層セラミックコンデンサー
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a paste for an external electrode of a laminated ceramic capacitor which is excellent in conductivity, oxidation resistance, resistance to solder erosion and excellent in matching with an internal electrode, and a laminated ceramic using the paste. It is about capacitors.
【0002】[0002]
【従来の技術】従来、積層セラミックコンデンサー外部
電極用ペーストとして、パラジウム、銀あるいは銀パラ
ジウムペーストが用いられてきた。これらは交互に多層
にパラジウム、銀あるいは銀ーパラジウム内部電極を形
成した積層誘電体に外部電極用ペーストを塗布した後、
600〜900℃程度の範囲で空気中で焼成し、多層に
形成された内部電極と充分な導電性コンタクトを与える
外部電極として用いられてきた。2. Description of the Related Art Conventionally, palladium, silver or silver-palladium paste has been used as a paste for external electrodes of a monolithic ceramic capacitor. After alternately applying the external electrode paste to the laminated dielectric in which palladium, silver or silver-palladium internal electrodes are formed in multiple layers,
It has been used as an external electrode which is fired in the air at a temperature of about 600 to 900 ° C. and gives sufficient conductive contact with the internal electrode formed in multiple layers.
【0003】上記の外部電極用ペーストの導電粉として
用いられているのは、銀、銀−パラジウム、パラジウム
粉末であるが、それぞれには以下のような欠点がある。
パラジウムは高価である上、導電性が悪い。銀に少量の
パラジウムを添加した銀−パラジウムの場合、はんだ付
け性が不十分であり、メッキして使わざるを得ない。ま
た、ニッケル内部電極を有するコンデンサーの外部電極
として用いた場合には、ニッケルと銀とは合金を作らな
いためコンタクトが充分に得られない。Silver, silver-palladium, and palladium powder are used as the conductive powder of the above-mentioned external electrode paste, but each has the following drawbacks.
Palladium is expensive and has poor conductivity. In the case of silver-palladium in which a small amount of palladium is added to silver, solderability is insufficient and it is unavoidable to plate it for use. Further, when used as an external electrode of a capacitor having a nickel internal electrode, nickel and silver do not form an alloy, so that sufficient contact cannot be obtained.
【0004】また、銀外部電極ペーストを用いた場合に
は、はんだ食われがあり、また、ニッケル内部電極と充
分な結合が得られず、導電性が不十分である。銅粉を用
いた外部電極ペーストの試みもあるが、窒素雰囲気中で
焼成しなければならず、そのため、有機バインダーの抜
けが悪く、内部電極とのコンタクトが充分に得られず、
不良率が高い。 酸素をドープして焼成した場合には、
バインダーの抜けはあるが銅の電極が酸化され、はんだ
付け性が著しく悪くなる。Further, when the silver external electrode paste is used, there is solder erosion, and a sufficient bond with the nickel internal electrode cannot be obtained, resulting in insufficient conductivity. There is also an attempt of an external electrode paste using copper powder, but it has to be fired in a nitrogen atmosphere, so the organic binder is poorly removed, and sufficient contact with the internal electrodes cannot be obtained.
High defective rate. When oxygen is doped and fired,
Although the binder is removed, the copper electrode is oxidized and the solderability is significantly deteriorated.
【0005】[0005]
【発明が解決しようとする課題】本発明は、導電性、耐
酸化性、内部電極とのマッチング性に優れる積層セラミ
ックコンデンサー外部電極ペースト並びに該ペーストを
用いたコンデンサーを提供するものである。DISCLOSURE OF THE INVENTION The present invention provides a laminated ceramic capacitor external electrode paste having excellent conductivity, oxidation resistance and matching with internal electrodes, and a capacitor using the paste.
【0006】[0006]
【課題を解決するための手段】本発明者らは上記目的を
達成すべく鋭意研究の結果、本発明を完成するに至っ
た。すなわち、本発明は、次のとおりである。 1.一般式AgxCuyMz(ただし、MはBi,P
b,Znより選ばれた1種以上であり、x,y,zは原
子比で表して、0.001≦x≦0.3、0.7≦y≦
0.999、0≦z≦0.005、x+y+z=1であ
る。)で表され、粒子表面の銀濃度が平均の銀濃度の
2.1倍以上で、かつ、粒子表面に向かって銀濃度が増
加する領域を有する銅合金粉末100重量部に対して、
ガラスフリット0.1〜40重量部及び有機ビヒクルか
らなることを特徴とする積層セラミックコンデンサー外
部電極用ペースト。 2.ガラスフリットがPbO,B2 O3 ,ZnO,Si
O2 ,CaO,Al2 O 3 ,BaO,Bi2 O3 ,Na
2 O,K2 O,MaOより選ばれた1種以上を含むこと
を特徴とする請求項1記載の積層セラミックコンデンサ
ー外部電極用ペースト。 3.有機ビヒクルがエチルセルロース、アクリル樹脂、
メチルセルロース、ヒドロキシエチルセルロース、エチ
ルセルロース誘導体、アルキッド樹脂、ブチラール樹
脂、フェノール樹脂、アルキッドフェノール樹脂、木材
ロジンより選ばれた1種以上を含むことを特徴とする請
求項1又は2記載の積層セラミックコンデンサ電極用ペ
ースト。 4.請求項1、2又は3記載のペーストを塗布後、焼成
して外部電極として用いることを特徴とする、内部電極
がニッケルからなる積層セラミックコンデンサー。 5.請求項1、2又は3記載のペーストを塗布後、焼成
して外部電極として用いることを特徴とする、内部電極
がパラジウム又は銀−パラジウムからなる積層セラミッ
クコンデンサー。 6.請求項1、2又は3記載のペーストを塗布後、焼成
して外部電極として用いることを特徴とする、内部電極
が銅からなる積層セラミックコンデンサー。Means for Solving the Problems The present inventors have achieved the above object.
As a result of earnest research to achieve the present invention, the present invention has been completed.
It was That is, the present invention is as follows. 1. General formula AgxCuyMz (where M is Bi, P
at least one selected from b and Zn, and x, y, and z are original
Expressed as a child ratio, 0.001 ≦ x ≦ 0.3, 0.7 ≦ y ≦
0.999, 0 ≦ z ≦ 0.005, x + y + z = 1
It ), The silver concentration on the grain surface is
2.1 times or more, and the silver concentration increases toward the grain surface.
With respect to 100 parts by weight of the copper alloy powder having a region to be added,
Glass frit 0.1-40 parts by weight and organic vehicle
Outside the monolithic ceramic capacitor characterized by
Part electrode paste. 2. Glass frit is PbO, B2O3, ZnO, Si
O2, CaO, Al2O 3, BaO, Bi2O3, Na
2O, K2Contain at least one selected from O and MaO
A multilayer ceramic capacitor according to claim 1,
-Paste for external electrodes. 3. Organic vehicle is ethyl cellulose, acrylic resin,
Methyl cellulose, hydroxyethyl cellulose, ethi
Le cellulose derivative, alkyd resin, butyral tree
Fat, phenol resin, alkyd phenol resin, wood
A contract characterized by containing at least one selected from rosin
The multilayer ceramic capacitor electrode electrode according to claim 1 or 2.
The most. 4. After applying the paste according to claim 1, 2 or 3, firing
Internal electrode characterized by being used as an external electrode
Is a multilayer ceramic capacitor made of nickel. 5. After applying the paste according to claim 1, 2 or 3, firing
Internal electrode characterized by being used as an external electrode
Is a laminated ceramic with palladium or silver-palladium
A condenser. 6. After applying the paste according to claim 1, 2 or 3, firing
Internal electrode characterized by being used as an external electrode
Is a multilayer ceramic capacitor made of copper.
【0007】本発明に用いる銅合金粉末は、アトマイズ
法により作製され、中でもガスアトマイズ法が好まし
い。本発明者らにより既に開示されているガスアトマイ
ズ法がより好ましい(米国出願番号395531号)。
開示内容によれば、かかる組成の銀、銅、金属種の混合
物を不活性ガス雰囲気中、または真空中で高周波誘導加
熱、抵抗加熱、または外部よりのバーナー加熱に より
加熱溶解する。この時、用いるるつぼは、かかる組成の
融液と全くかあるいはきわめて緩やかにしか反応しない
材質が好ましく、黒鉛、ボロンナイトライド、シリコン
カーバイント、石英、マグネシア、ちっかケイソを主成
分にした材質が挙げられる。ついで、融液をるつぼ先端
より不活性ガス雰囲気中へ噴出させる。噴出と同時に、
不活性ガスの高速気流を融液に対して噴出し、微粉化す
る方法である。 ここで用いる不活性ガスとは、かかる
組成の融液と全くかあるいは極めて緩やかにしか反応し
ないガスを意味する。例えば、窒素、ヘリウム、アルゴ
ン、水素あるいはそれらの混合物が挙げられる。また、
本発明で用いる銅合金の特性に影響を与えない程度であ
れば、若干の不純物ガスがまじっていても構わない。例
えば、アトマイズガス中の酸素量は、2%以下が好まし
く、さらに、0.5%以下が好ましい。ガス圧力(膨張
前)は、5kg/cm2 G以上が好ましく、15kg/
cm2 G以上がさらに好ましく、30kg/cm2 G以
上が最も好ましい。高速ガス気流は、ガスノズル出口で
50m/秒以上が好ましく、さらに100m/秒以上が
好ましく、300m/秒が最も好ましい。ガスと融液と
の質量速度比は0.1以上が好ましく、さらに1以上が
好ましい。The copper alloy powder used in the present invention is produced by an atomizing method, and the gas atomizing method is particularly preferable. The gas atomizing method already disclosed by the present inventors is more preferable (US application No. 395531).
According to the disclosure, a mixture of silver, copper, and metal species having such a composition is heated and melted by high frequency induction heating, resistance heating, or external burner heating in an inert gas atmosphere or in a vacuum. At this time, the crucible used is preferably a material that reacts with the melt having such a composition at all or only extremely slowly, and a material containing graphite, boron nitride, silicon carbide, quartz, magnesia, or a small diatom as a main component is preferable. Can be mentioned. Next, the melt is ejected from the tip of the crucible into an inert gas atmosphere. At the same time as the eruption,
This is a method in which a high-speed stream of an inert gas is jetted to the melt to make it fine. The inert gas used here means a gas that reacts with the melt having such a composition at all or only very slowly. For example, nitrogen, helium, argon, hydrogen or a mixture thereof can be used. Also,
A slight amount of impurity gas may be mixed as long as it does not affect the characteristics of the copper alloy used in the present invention. For example, the amount of oxygen in the atomized gas is preferably 2% or less, more preferably 0.5% or less. The gas pressure (before expansion) is preferably 5 kg / cm 2 G or more, and 15 kg / cm 2
cm 2 G or more is more preferable, and 30 kg / cm 2 G or more is most preferable. The high-speed gas flow is preferably 50 m / sec or more at the gas nozzle outlet, more preferably 100 m / sec or more, and most preferably 300 m / sec. The mass velocity ratio of the gas and the melt is preferably 0.1 or more, more preferably 1 or more.
【0008】本発明で用いる銅合金粉末は一般式Agx
CuyMz(ただし、MはBi,Pb,Znより選ばれ
た1種以上、0.001≦x≦0.3、0.7≦y≦
0.99 9、0≦z≦0.005、x+y+z=1、
原子比)であるが、xが0.001未満では、充分な耐
酸化性が得られず、また、xが0.3を越える場合に
は、内部電極のニッケルとの結合性が悪くなる。好まし
くは、0.01≦x≦0.25、さらに好ましくは0.
01≦x≦0.15である。また、MはBi、Pb、Z
nより選ばれた1種以上であるが、はんだ付け性、密着
性を向上する事ができる。zが0.005を越える場合
には、導電性が悪くなる。好ましくは、0≦z≦0.0
005、さらに好ましくは、0.000006≦z≦
0.0005である。また、MとしてもBi、Pbが好
ましく、さらにPbが好ましい。The copper alloy powder used in the present invention has the general formula Agx.
CuyMz (where M is at least one selected from Bi, Pb and Zn, 0.001 ≦ x ≦ 0.3, 0.7 ≦ y ≦
0.99 9, 0 ≦ z ≦ 0.005, x + y + z = 1,
Atomic ratio), when x is less than 0.001, sufficient oxidation resistance cannot be obtained, and when x is more than 0.3, the bondability of the internal electrodes with nickel deteriorates. Preferably 0.01 ≦ x ≦ 0.25, more preferably 0.
01 ≦ x ≦ 0.15. M is Bi, Pb, Z
Although it is one or more selected from n, solderability and adhesion can be improved. When z exceeds 0.005, the conductivity deteriorates. Preferably 0 ≦ z ≦ 0.0
005, and more preferably 0.000006 ≦ z ≦
It is 0.0005. Further, M is preferably Bi or Pb, more preferably Pb.
【0009】また、本発明で用いる銅合金粉末は、銀濃
度が、表面近くで、粒子表面に向かって次第に増加する
領域を有している。表面の銀濃度は、平均の銀濃度の
2.1倍以上であるが、3倍以上20倍以下が好まし
く、さらに、3倍以上15倍以下が好ましい。2.1未
満では、焼結性、耐酸化性が劣る。本発明で用いる銅合
金粉末の特徴である低融点である銀が表面に濃縮された
粉末の生成機構については既に、本発明者らにより米国
出願395531号に開示されているように以下のよう
に考えられる。Further, the copper alloy powder used in the present invention has a region where the silver concentration gradually increases near the surface toward the grain surface. The silver concentration on the surface is 2.1 times or more the average silver concentration, but is preferably 3 times or more and 20 times or less, more preferably 3 times or more and 15 times or less. If it is less than 2.1, sinterability and oxidation resistance are poor. The generation mechanism of the powder having the low melting point silver concentrated on the surface, which is the characteristic of the copper alloy powder used in the present invention, has already been disclosed by the present inventors in US application 395531 as follows. Conceivable.
【0010】すなわち、高圧ガスの断熱膨張で生じた高
速気流との衝突により生じた微細な金属液滴が高速気流
に同伴し、高速走行しながら急冷凝固する。この凝固過
程で低融点である銀成分に富んだ液相が表面に排出され
て遅れて固化し、表面に銀が濃縮した粉末ができるもの
と考えられる。本発明で用いられる銅合金粉末の銀濃度
xとはAg/(Ag+Cu+M)、銅濃度yはCu/
(Ag+Cu+M)、M濃度zはM/(Ag+Cu+
M)、原子比である。That is, fine metal droplets generated by collision with a high-speed airflow generated by adiabatic expansion of high-pressure gas are entrained in the high-speed airflow and rapidly cooled and solidified while traveling at high speed. It is considered that during this solidification process, a liquid phase rich in silver having a low melting point is discharged to the surface and solidifies later, resulting in a powder in which silver is concentrated on the surface. The silver concentration x of the copper alloy powder used in the present invention is Ag / (Ag + Cu + M), and the copper concentration y is Cu /
(Ag + Cu + M), M concentration z is M / (Ag + Cu +
M), atomic ratio.
【0011】表面ならびに表面近くの銀濃度、銅濃度、
M濃度の測定は、XPS(X線光電子分光分析装置)に
より行なった。 装置;KRATOS社製 XSAM800 資料;試料台に導電性両面テープを張り付け、本発明で
用いる銅合金粉末を両面テープ上を完全におおうように
して、且つ変形を与えないようにして付着させた。Silver concentration, copper concentration on and near the surface,
The M concentration was measured by XPS (X-ray photoelectron spectroscopy analyzer). Device: XSAM800 manufactured by KRATOS, Inc. Material: A conductive double-sided tape was attached to a sample stand, and the copper alloy powder used in the present invention was adhered so as to completely cover the double-sided tape and not to deform it.
【0012】エッッチング条件;アルゴンイオンガスを
加速電圧2keV、アルゴンイオンビームの試料面に対
する入射角45度、室内圧力10-7torrで毎回5分
間行なった。 銀濃度の測定条件:マグネシウムのKα線(電圧12k
eV、電流10mA)を入射させ、光電子の取り出し角
度は試料面に対し、90度、室内圧力10-8torrで
行なった。銀濃度の測定は、測定、次にエッチングし、
これを5回繰り返し行い、最初の2回の測定の平均値を
表面の銀濃度、表面の銅濃度、表面のM濃度とした。Etching conditions: Argon ion gas was accelerating voltage of 2 keV, the angle of incidence of the argon ion beam on the sample surface was 45 degrees, and the chamber pressure was 10 -7 torr. Measurement conditions of silver concentration: Kα ray of magnesium (voltage 12k
eV, current 10 mA) was applied, the photoelectron extraction angle was 90 ° with respect to the sample surface, and the chamber pressure was 10 −8 torr. Silver concentration is measured, then etched,
This was repeated 5 times, and the average values of the first two measurements were used as the surface silver concentration, the surface copper concentration, and the surface M concentration.
【0013】平均の銀、銅、M濃度の測定は、試料を濃
硝酸中で溶解し、ICP〔高周波誘導結合型プラズマ発
光分析計 セイコー電子(株)製 JY38P2〕を用
いて測定した。本発明で用いることのできる粉末の平均
粒子径は、0.1ミクロン〜50ミクロンであるが、
0.2〜30ミクロンが好ましく、さらに、0.2〜1
5ミクロンが好ましい。50ミクロンを越える場合に
は、塗布適性、チキソトロピー性が悪く、0.1ミクロ
ン未満では分散性が悪く、ペースト中での粒子の不均一
を生じ易い。平均粒径の測定には、レーザー回折型粒子
径測定装置SALD1100〔(株)島津製作所製〕に
より行なった。測定条件は、エチレングリコール分散媒
を用いて充分に粉末を分散させて5回測定を繰り返し、
体積積算平均値の5回の平均値を粉末の平均粒子径とし
た。The average silver, copper and M concentrations were measured by dissolving the sample in concentrated nitric acid and using ICP [high frequency inductively coupled plasma emission spectrometer JY38P2 manufactured by Seiko Denshi KK]. The average particle size of the powder that can be used in the present invention is 0.1 to 50 microns,
0.2 to 30 microns is preferable, and 0.2 to 1 is more preferable.
5 microns is preferred. If it exceeds 50 μm, the coating suitability and thixotropy are poor, and if it is less than 0.1 μm, the dispersibility is poor and the particles in the paste are likely to be non-uniform. The average particle diameter was measured with a laser diffraction particle diameter measuring device SALD1100 (manufactured by Shimadzu Corporation). The measurement conditions are that the powder is sufficiently dispersed using an ethylene glycol dispersion medium and the measurement is repeated 5 times.
The average value of 5 times of the volume integrated average value was defined as the average particle diameter of the powder.
【0014】本発明で用いる銅合金粉末は、一般式Ag
xCuyMz(0.001≦x≦0.3、0.7≦y≦
0.999、0≦z≦0.005、x+y+z=1、た
だし、MはPb,Bi、Znより選ばれた1種以上であ
る。)であるが、抵抗調節剤としては、Ag、Al、S
i、Mn,Cr、Ir,Nb,Sn、Fe,Ni、H
f,Se、S,Te,In,Pd、Rhを、粉末状態で
あるいは合金成分として混合することができるし、ま
た、必要に応じて有機銅(例えば、レジネート銅、ステ
アリン酸銅、オレイン酸銅、酢酸銅、ラウリン酸銅、サ
リチル酸銅、クエン酸銅、シュウ酸銅、シュセキ酸銅、
オクチル酸銅、安息香酸銅、その他のカルボン酸銅、ジ
カルボン酸銅)や有機白金、有機パラジウム、有機ジル
コネート、有機チタネート、有機ロジウム(例えば、ア
セチルアセトナート、パルミチン酸、アビエチン酸、ス
テアリン酸、オレイン酸、ナフテン酸、その他のカルボ
ン酸塩、ジカルボン酸塩)を接着性を向上するために添
加することもできる。The copper alloy powder used in the present invention has the general formula Ag
xCuyMz (0.001 ≦ x ≦ 0.3, 0.7 ≦ y ≦
0.999, 0 ≦ z ≦ 0.005, x + y + z = 1, where M is at least one selected from Pb, Bi, and Zn. ), But as the resistance adjusting agent, Ag, Al, S
i, Mn, Cr, Ir, Nb, Sn, Fe, Ni, H
f, Se, S, Te, In, Pd, and Rh can be mixed in a powder state or as an alloy component, and if necessary, organic copper (for example, resinate copper, copper stearate, copper oleate) can be mixed. , Copper acetate, copper laurate, copper salicylate, copper citrate, copper oxalate, copper sesquiate,
Copper octylate, copper benzoate, other copper carboxylates, copper dicarboxylates), organic platinum, organic palladium, organic zirconates, organic titanates, organic rhodium (eg acetylacetonate, palmitic acid, abietic acid, stearic acid, olein) Acid, naphthenic acid, other carboxylic acid salt, dicarboxylic acid salt) may be added to improve the adhesiveness.
【0015】本発明で用いることのできるガラスフリッ
トは、所定の温度で溶融し、金属分どうし、あるいは金
属外部電極と誘電体とを強固に固着させるものである。
たとえば、組み合わせとしては、PbO−B2 O3 −Z
nO,CaO−Al2 O3 −SiO2 ,ZnO−B2 O
3 ,ZnO−PbO−B2 O3 −SiO2 、PbO−S
iO2 −B2 O3 、B2 O3 −PbO、SiO2 −Zn
O−BaO、SiO2−ZnO−MgO、SiO2 −Z
nO−CaO、SiO2 −Al2 O3 −BaO、SiO
2 −Al2 O3 −MgO、SiO2 −Al2 O3 −Ca
O、SiO2 −B2 O3 −Al2 O3 、SiO2 −B2
O3 −Na2 O、SiO2 −B2 O3 −K2 O、SiO
2 −Na2 O、SiO2 −Li2 O、SiO2 −K
2 O、SiO 2 −B2 O3 −SrO、SiO2 −PbO
−Na2 O、SiO2 −PbO−Li 2 O、SiO2 −
PbO−K2 O、SiO2 −B2 O3 、SiO2 −Pb
O−CaO、SiO2 −ZnO、SiO2 −B2 O3 −
Bi2 O3 を主成分としたものが利用できる。好ましく
は、ホウケイ酸亜鉛、ホウケイ酸鉛、ホウケイ酸ビスマ
スを主成分にしたものである。The glass frit which can be used in the present invention
Melts at a specified temperature, and metal or metal
The metal external electrode and the dielectric are firmly fixed to each other.
For example, as a combination, PbO-B2O3-Z
nO, CaO-Al2O3-SiO2, ZnO-B2O
3, ZnO-PbO-B2O3-SiO2, PbO-S
iO2-B2O3, B2O3-PbO, SiO2-Zn
O-BaO, SiO2-ZnO-MgO, SiO2-Z
nO-CaO, SiO2-Al2O3-BaO, SiO
2-Al2O3-MgO, SiO2-Al2O3-Ca
O, SiO2-B2O3-Al2O3, SiO2-B2
O3-Na2O, SiO2-B2O3-K2O, SiO
2-Na2O, SiO2-Li2O, SiO2-K
2O, SiO 2-B2O3-SrO, SiO2-PbO
-Na2O, SiO2-PbO-Li 2O, SiO2−
PbO-K2O, SiO2-B2O3, SiO2-Pb
O-CaO, SiO2-ZnO, SiO2-B2O3−
Bi2O3It is possible to use those containing as a main component. Preferably
Is zinc borosilicate, lead borosilicate, bismuth borosilicate
It is mainly composed of stainless steel.
【0016】これらに、必要であれば、密着性をさらに
向上するために、酸化ビスマス、酸化マンガン、酸化ジ
ルコニウム、酸化バリウム、酸化ベリリウム、酸化第一
銅、酸化スズ、酸化モリブデン、酸化バナジウム、酸化
ネオジウム、酸化カドミウム、酸化鉄、酸化ランタン、
酸化タングステン、酸化ヒソ、酸化アンチモン、酸化ゲ
ルマニウム、酸化クロム、四三酸化鉛、酸化イットリウ
ム、酸化セリウムやタングステンなどの金属微粉末を添
加することができる。If necessary, in order to further improve the adhesion, bismuth oxide, manganese oxide, zirconium oxide, barium oxide, beryllium oxide, cuprous oxide, tin oxide, molybdenum oxide, vanadium oxide, and oxides are added. Neodymium, cadmium oxide, iron oxide, lanthanum oxide,
Fine metal powders such as tungsten oxide, histo oxide, antimony oxide, germanium oxide, chromium oxide, lead trioxide, yttrium oxide, cerium oxide and tungsten can be added.
【0017】ガラスフリットの軟化点は、焼成温度にも
よるが、900℃以下が好ましく、300℃以上が良
い。さらに、300℃以上600℃以下が好ましい。ガ
ラスフリットの構造は、結晶化ガラスあるいは非晶化ガ
ラス、あるいはそれらの混合物のいずれも用いる事がで
きる。ガラスフリットの粒子径としては、充分な焼結性
を得るために、0.01〜30ミクロン程度の平均粒子
径のものが好ましく、0.1〜5ミクロンが好ましい。
ここで記述される平均粒子径は、前記レーザー回折法で
測定した平均粒子径を示す。 0.01ミクロン未満の
場合には、凝集を起こし易く、また、30ミクロンを越
える場合には、塗布適性が低下する。The softening point of the glass frit depends on the firing temperature, but is preferably 900 ° C. or lower, more preferably 300 ° C. or higher. Further, it is preferably 300 ° C. or higher and 600 ° C. or lower. As the structure of the glass frit, either crystallized glass or amorphous glass, or a mixture thereof can be used. The particle size of the glass frit is preferably 0.01 to 30 μm, more preferably 0.1 to 5 μm, in order to obtain sufficient sinterability.
The average particle diameter described here indicates the average particle diameter measured by the laser diffraction method. If it is less than 0.01 micron, agglomeration tends to occur, and if it exceeds 30 micron, the coating suitability is deteriorated.
【0018】ガラスフリットの使用量は、銅合金粉末1
00重量部に対して、0.1〜40重量部であるが、
0.1未満の場合には、充分な接着性が得られず、40
重量部を越える場合には、はんだ付け性が悪くなる。ま
た、外部電極と、内部電極との間にガラスが入り込み、
コンタクトが充分にとれなくなる。好ましくは、0.5
〜15重量部であり、さらに好ましくは0.5〜8重量
部である。The glass frit is used in the amount of copper alloy powder 1
0.1 to 40 parts by weight with respect to 00 parts by weight,
If it is less than 0.1, sufficient adhesiveness cannot be obtained, and
If it exceeds the weight part, the solderability becomes poor. In addition, glass enters between the external electrode and the internal electrode,
Contact cannot be made sufficiently. Preferably 0.5
To 15 parts by weight, and more preferably 0.5 to 8 parts by weight.
【0019】本発明で使用される分散剤としては、銅合
金粉末とガラスフリット及び必要な添加剤を充分に分散
させ、かかる組成のペーストに適度の粘度を与え、さら
には、塗布適性を向上させるためのものであり、公知の
有機ビヒクルが使用できる。特に、かかる組成のペース
トの焼成温度以下で分解あるいは揮散するものが好まし
い。有機ビヒクルとは、有機バインダー及びまたは溶剤
からなるものをいう。有機ビヒクルとしては、エチルセ
ルロース、ヒドロキシエチルセルロース、メチルセルロ
ース、ニトロセルロース及びエチルセルロース誘導体、
アクリル樹脂、ブチラール樹脂、アルキッドフェノール
樹脂、木材ロジンを含むものが挙げられる。なかでも好
ましくは、エチルセルロース、アクリル樹脂である。ア
クリル樹脂としては、分解温度が500度以下のものが
好ましい。例えば、ポリメタアクリル酸ブチルエステ
ル、ポリメタアクリル酸イソブチルエステル、低級アル
コールのポリメタアクリレートを含むものが挙げられ
る。ブチラール樹脂としては、ポリビニルブチラール樹
脂が好ましい。本発明で用いる場合には、これらの樹脂
を溶剤等へ分散させて用いることが好ましく、公知の溶
剤を用いることができる。しかし、適度の粘性、塗布性
が得られれば、必ずしも樹脂を用いる事もなく、溶剤を
分散剤として用いても構わない。As the dispersant used in the present invention, the copper alloy powder, the glass frit and the necessary additives are sufficiently dispersed to give the paste having such a composition an appropriate viscosity and further improve the coating suitability. Therefore, a known organic vehicle can be used. In particular, a paste that decomposes or volatilizes below the firing temperature of the paste having such a composition is preferable. The organic vehicle means an organic binder and / or a solvent. The organic vehicle, ethyl cellulose, hydroxyethyl cellulose, methyl cellulose, nitrocellulose and ethyl cellulose derivatives,
Examples thereof include those containing acrylic resin, butyral resin, alkyd phenol resin, and wood rosin. Of these, ethyl cellulose and acrylic resin are preferable. As the acrylic resin, those having a decomposition temperature of 500 ° C. or less are preferable. Examples thereof include those containing polymethacrylic acid butyl ester, polymethacrylic acid isobutyl ester, and lower alcohol polymethacrylate. As the butyral resin, a polyvinyl butyral resin is preferable. When used in the present invention, these resins are preferably dispersed in a solvent or the like, and a known solvent can be used. However, the resin is not necessarily used and the solvent may be used as the dispersant as long as appropriate viscosity and coatability are obtained.
【0020】溶剤としては、公知の溶剤で構わない。か
かる組成のペーストの保存時に揮散が少なく、且つ適度
の粘性を与え、さらに、塗布適性に優れた溶剤が好まし
い。例えば、テルペノール、オレイルアルコール、ブチ
ルカルビトール、エチルカルビトール、メチルカルビト
ール、エチルセロソルブ、ブチルセロソルブ、ヘキシル
セロソルブ等のエーテル類、ブチルカルビトールアセテ
ート、エチルカルビトールアセテート、メチルカルビト
ールアセテート、エチルセロソルブアセテート、ブチル
セロソルブアセテート、ヘキシルセロソルブアセテー
ト、酢酸エチル、酢酸ブチル、2,2,4−トリメチル
1,3−ペンタンジオールモノイソブチレート等のエス
テル類、メチルエチルケトン、メチルイソブチルケト
ン、等のケトン類、ミネラルスピリット、トルエン、キ
シレンなどの炭化水素類が挙げられる。しかし必ずしも
これらに限定される事はない。As the solvent, a known solvent may be used. A solvent having a small amount of volatilization during storage of the paste having such a composition, imparting an appropriate viscosity, and having excellent coating suitability is preferable. For example, terpenol, oleyl alcohol, butyl carbitol, ethyl carbitol, methyl carbitol, ethers such as ethyl cellosolve, butyl cellosolve, hexyl cellosolve, butyl carbitol acetate, ethyl carbitol acetate, methyl carbitol acetate, ethyl cellosolve acetate, Butyl cellosolve acetate, hexyl cellosolve acetate, ethyl acetate, butyl acetate, esters such as 2,2,4-trimethyl 1,3-pentanediol monoisobutyrate, ketones such as methyl ethyl ketone and methyl isobutyl ketone, mineral spirits, toluene , And hydrocarbons such as xylene. However, it is not necessarily limited to these.
【0021】分散剤の使用量としては、粘性及び導電性
を損なわない程度であれば良く、例えば、銅合金粉末1
00重量部に対して50重量部ないし1重量部が好まし
い。本発明のペーストに、必要に応じて、潤滑剤、酸化
防止剤、粘度調節剤、消泡剤(シリコンオイルなど)を
添加する事もできる。例えば、シランカップリング剤、
アルミニウムカップリング剤、チタンカップリング剤、
大豆レシチン、ジエタノールアミン、トリエタノールア
ミン、トリブチルフォスフェート、炭素数20から50
までのマイクロワックス、炭素数20から炭素数35ま
でのパラフィン、ステアリン酸、オレイン酸、ジオクチ
ルフタレート等の可塑剤、炭素数20までのカルボン
酸、ジカルボン酸、ピロカテコール、メチルハイドロキ
ノン、ハイドロキノン、フェノール等のフェノール誘導
体、アセチルアセトン等の酸化防止剤を添加する事もで
きる。潤滑剤、酸化防止剤、粘度調節剤、安定化剤、消
泡剤等の添加量は、銅合金粉末100重量部に対して2
0重量部以下が好ましい。さらに、10重量部以下が好
ましい。The amount of the dispersant used may be such that viscosity and conductivity are not impaired. For example, copper alloy powder 1
It is preferably 50 parts by weight to 1 part by weight with respect to 00 parts by weight. A lubricant, an antioxidant, a viscosity modifier, and an antifoaming agent (such as silicone oil) can be added to the paste of the present invention, if necessary. For example, a silane coupling agent,
Aluminum coupling agent, titanium coupling agent,
Soybean lecithin, diethanolamine, triethanolamine, tributyl phosphate, carbon number 20 to 50
Micro waxes, paraffins having 20 to 35 carbon atoms, plasticizers such as stearic acid, oleic acid, dioctyl phthalate, carboxylic acids having 20 carbon atoms, dicarboxylic acids, pyrocatechol, methylhydroquinone, hydroquinone, phenol, etc. It is also possible to add an antioxidant such as a phenol derivative or acetylacetone. Lubricants, antioxidants, viscosity modifiers, stabilizers, defoamers, etc. should be added in an amount of 2 per 100 parts by weight of the copper alloy powder.
It is preferably 0 parts by weight or less. Further, it is preferably 10 parts by weight or less.
【0022】本発明のペーストを外部電極として使用す
る場合には、積層セラミックコンデンサーに塗布後、焼
成するのが良い。焼成温度は、銅合金粉末及びガラスフ
リットが充分に焼結し、内部電極のニッケル、銀パラジ
ウム、パラジウムあるいは銅と結合するのに充分な温度
が好ましく、例えば、500℃〜950℃であり、さら
に、600℃〜900℃が好ましい。焼成雰囲気は、不
活性ガス雰囲気が好ましいが、有機ビヒクルを充分に燃
焼分解させるために、少なくとも少量の酸素の存在が必
要である。酸素の添加量としては、10%以下が好まし
く、さらに、1%以下が好ましく、さらに、1000p
pm以下1ppm以上が好ましい。When the paste of the present invention is used as an external electrode, it is preferable to apply it to a laminated ceramic capacitor and then fire it. The firing temperature is preferably a temperature at which the copper alloy powder and the glass frit are sufficiently sintered and combined with nickel, silver palladium, palladium or copper of the internal electrode, for example, 500 ° C to 950 ° C. 600 ° C. to 900 ° C. is preferable. The firing atmosphere is preferably an inert gas atmosphere, but at least a small amount of oxygen must be present in order to sufficiently combust and decompose the organic vehicle. The amount of oxygen added is preferably 10% or less, more preferably 1% or less, and further 1000 p
It is preferably pm or less and 1 ppm or more.
【0023】本発明のペーストに含まれる銅合金粉末
は、少量の銀を含んでいるにもかかわらず粉末表面に銀
が富んだ構造を有しているために、優れた耐酸化性を有
している。そのため、焼成時にも、バーンアウト領域で
高酸素ドープ窒素雰囲気中での焼成が可能になり、製品
の歩留まりを向上させるのみならず、従来銅ペースト、
銀ぺースとで達成出来なかったニッケル内部電極を有す
る積層セラミックコンデンサーの外部電極として使用で
きる利点がある。The copper alloy powder contained in the paste of the present invention has excellent oxidation resistance because it has a structure rich in silver on the surface of the powder even though it contains a small amount of silver. ing. Therefore, even during firing, it becomes possible to perform firing in a high oxygen-doped nitrogen atmosphere in the burnout region, which not only improves the yield of the product but also the conventional copper paste,
There is an advantage that it can be used as an external electrode of a monolithic ceramic capacitor having a nickel internal electrode, which cannot be achieved with a silver space.
【0024】積層セラミックコンデンサーの誘電体とし
ては、チタン酸系のものが挙げられるがこれに限った物
ではない。例えば、チタン酸系の物としては、チタン酸
バリウム系、チタン酸ストロンチウム系、チタン酸マグ
ネシウム系、チタン酸カルシウム系などが挙げられる。
かくして得られた焼成膜も銅、銀の安定化された合金を
作製しているために、耐はんだくわれ、耐酸化性に優れ
た効果を有しているものと思われる。Examples of the dielectric of the monolithic ceramic capacitor include titanic acid-based dielectrics, but the dielectrics are not limited thereto. Examples of titanic acid-based materials include barium titanate-based materials, strontium titanate-based materials, magnesium titanate-based materials, and calcium titanate-based materials.
It is considered that the fired film thus obtained also has the effects of being resistant to soldering and excellent in oxidation resistance because it is made of a stabilized alloy of copper and silver.
【0025】本発明のペーストの特性は、コンデンサー
の容量Q、はんだ付け性、接着強度について測定した。
容量はLCRメーター〔日置電気(株)製〕)を用いて
周波数1kHZで測定した。はんだ付け性は、焼成直後
と、焼成後150℃ 2HR空気中エージング後で測定
した。測定は、230℃ はんだ浴(スズ/鉛共晶はん
だ)に10秒DIPして濡れ面積から判断した。The characteristics of the paste of the present invention were measured with respect to the capacitance Q of the capacitor, solderability and adhesive strength.
The capacity was measured with an LCR meter (manufactured by Hioki Electric Co., Ltd.) at a frequency of 1 kHz. The solderability was measured immediately after firing and after aging in air at 150 ° C. for 2 HR after firing. The measurement was performed by dipping in a solder bath (tin / lead eutectic solder) at 230 ° C. for 10 seconds and judging from the wet area.
【0026】接着強度は、外部電極に0.8mmφスズ
メッキ銅線をはんだ付けして垂直に引っ張り剥がれる時
の強度から求めた。The adhesive strength was determined from the strength when a 0.8 mmφ tin-plated copper wire was soldered to the external electrode and pulled vertically to be peeled off.
【0027】[0027]
【実施例】以下、実施例によって本発明を具体的に説明
する。EXAMPLES The present invention will be specifically described below with reference to examples.
【0028】[0028]
【実施例1】銀粒子(99.9重量%以上 平均粒径2
mmφ、以下の実施例同じ)5.35g、銅粒子(9
9.9重量%以上 平均粒径3mmφ、以下の実施例同
じ)314.0075gをボロンナイトライドるつぼに
入れ、窒素ガス雰囲気中(99.9%以上)で高周波誘
導加熱を用いて1700℃まで加熱溶解した。融解後、
るつぼ先端に取り付けたノズルより窒素ガス雰囲気中へ
噴出した。同時に、ガス30kg/cm2 Gの窒素ガス
(99.9%以上)を融液に対してガス/液質量速度比
0.7の条件で噴出し、融液をアトマイズした。この時
のガスノズル出口の線速度は150m/秒であり、ま
た、得られた粉末の平均粒子径は16ミクロンであっ
た。粉末の銀濃度は、粒子表面より0.0916,0.
084,0.070,0.056,0.055で表面の
銀濃度はx=0.0878であり、平均の銀濃度はx=
0.01で表面の銀濃度は平均の銀濃度の8.78倍で
あった。Example 1 Silver particles (99.9% by weight or more, average particle size 2
mmφ, same as in the following examples) 5.35 g, copper particles (9
9.9 wt% or more Average particle diameter 3 mmφ, same as the following examples) 314.0075 g was put into a boron nitride crucible and heated to 1700 ° C. in a nitrogen gas atmosphere (99.9% or more) using high frequency induction heating. Dissolved. After thawing
It was jetted into a nitrogen gas atmosphere from a nozzle attached to the tip of the crucible. At the same time, 30 kg / cm 2 G of nitrogen gas (99.9% or more) was jetted to the melt at a gas / liquid mass velocity ratio of 0.7 to atomize the melt. At this time, the linear velocity at the gas nozzle outlet was 150 m / sec, and the average particle size of the obtained powder was 16 μm. The silver concentration of the powder was 0.0916,0.
084, 0.070, 0.056, 0.055, the surface silver concentration is x = 0.0878, and the average silver concentration is x =
At 0.01, the surface silver concentration was 8.78 times the average silver concentration.
【0029】また、平均の銅濃度はy=0.99であっ
た。 得られた粉末の中10ミクロン以下の粉末10g
とPbO−ZnO−B2 O3 ガラスフリット0.2g、
エチルセルロース0.002g,テルペノール0.2
g、シリコン消泡剤0.002gを充分に混合し、ペー
スト状とした。得られたペーストをニッケルを内部電極
に有する積層セラミックコンデンサーの外部電極として
DIPして塗布した。塗布後、850℃ 窒素雰囲気中
(バーンアウトゾーン 100ppm酸素ドープ〜55
0℃)で10分間焼成した。The average copper concentration was y = 0.99. 10 g of powder having a size of 10 microns or less in the obtained powder
And PbO-ZnO-B 2 O 3 glass frit 0.2 g,
Ethyl cellulose 0.002g, terpenol 0.2
g and 0.002 g of a silicon defoaming agent were sufficiently mixed to form a paste. The obtained paste was applied by DIP as an external electrode of a monolithic ceramic capacitor having nickel as an internal electrode. After coating, in a nitrogen atmosphere at 850 ° C. (burnout zone 100 ppm oxygen-doped to 55
It was baked at 0 ° C. for 10 minutes.
【0030】コンデンサーの容量は、330nFであ
り、規格値にほぼ近かった。また、はんだ濡れは初期、
150℃エージング後、共に良好であった。接着強度
は、4〜5kgあり充分であった。The capacitance of the capacitor was 330 nF, which was close to the standard value. Also, solder wetting is in the initial stage,
Both were good after aging at 150 ° C. The adhesive strength was 4 to 5 kg, which was sufficient.
【0031】[0031]
【実施例2】銀粒子26.945g、銅粒子301.5
9325g、亜鉛粒子(99.9重量%以上)0.03
265gを黒鉛るつぼに入れ、窒素雰囲気中(99.9
%以上)高周波誘導加熱を用いて1700℃まで加熱溶
解した。融液をるつぼ先端のノズルより窒素雰囲気中へ
噴出した。噴出と同時に、ガス圧40kg/cm2 Gの
窒素ガス(99.9%以上)を融液に対してガス/液質
量速度比2.1の条件で噴出し、融液をアトマイズし
た。この時のガスノズル出口でのガス線速度は160m
/秒であった。得られた粉末の平均粒子径は14ミクロ
ンであった。銀濃度は粒子表面より0.58,0.4
6,0.36,0.22,0.1で表面の銀濃度はx=
0.52であり、平均の銀濃度はx=0.05であっ
た。表面の銀濃度は平均の銀濃度の10.4倍であっ
た。また、平均の銅濃度はy=0.9499、平均の亜
鉛濃度はz=0.0001であった。Example 2 26.945 g of silver particles, 301.5 of copper particles
9325 g, zinc particles (99.9% by weight or more) 0.03
265 g was placed in a graphite crucible and placed in a nitrogen atmosphere (99.9
% Or more) It was heated and melted to 1700 ° C. by using high frequency induction heating. The melt was jetted into a nitrogen atmosphere from a nozzle at the tip of the crucible. Simultaneously with the jetting, nitrogen gas (99.9% or more) having a gas pressure of 40 kg / cm 2 G was jetted to the melt at a gas / liquid mass velocity ratio of 2.1 to atomize the melt. At this time, the gas linear velocity at the gas nozzle outlet is 160 m
/ Sec. The average particle size of the obtained powder was 14 microns. Silver concentration is 0.58, 0.4 from the grain surface
6, 0.36, 0.22, 0.1, the surface silver concentration is x =
It was 0.52 and the average silver concentration was x = 0.05. The silver concentration on the surface was 10.4 times the average silver concentration. The average copper concentration was y = 0.499, and the average zinc concentration was z = 0.0001.
【0032】得られた粉末の中10ミクロン以下の粉末
10gとPbO−B2 O3 −SiO 2 −CaOガラスフ
リット0.1g,酸化第一銅0.001g、PbO−B
2 O 3 −BaOガラスフリット0.1g、アクリル樹脂
0.12g、ブチルカルビトール1g、エチルセロソル
ブ1gを充分に混合してペーストとした。得られたペー
ストをニッケルを内部電極に有するチタン酸バリウム系
積層セラミックコンデンサーの外部電極として塗布し
た。塗布後、900℃ 10分間窒素雰囲気中で焼成し
た(バーンアウトゾーン 100ppm酸素ドープ 〜
550℃)。焼成後、コンデンサーの容量は、310n
Fであり、ほぼ規格値どおりであり、また、はんだ付け
性も初期、150℃エージング後共に良好であった。Powder having a size of 10 μm or less in the obtained powder
10g and PbO-B2O3-SiO 2-CaO glass
Rit 0.1g, cuprous oxide 0.001g, PbO-B
2O 3-BaO glass frit 0.1 g, acrylic resin
0.12 g, butyl carbitol 1 g, ethyl cellosol
1 g of syrup was thoroughly mixed to form a paste. The obtained page
Barium titanate system with nickel as internal electrode
Applied as an external electrode of a monolithic ceramic capacitor
It was After coating, bake in a nitrogen atmosphere at 900 ° C for 10 minutes
(Burnout zone 100ppm oxygen dope ~
550 ° C). After firing, the capacity of the capacitor is 310n
F, almost the same as the standard value, and soldering
The properties were good both at the initial stage and after aging at 150 ° C.
【0033】接着強度は5kgと充分であった。The adhesive strength was 5 kg, which was sufficient.
【0034】[0034]
【実施例3】銀粒子53.95g、銅粒子285.74
68g、鉛粒子(99.9重量%以上)0.00518
g、亜鉛粒子0.0016325gをボロンナイトライ
ドるつぼに入れ、窒素雰囲気中で高周波誘導加熱を用い
て1700℃まで加熱溶解した。融液をるつぼ先端に取
り付けたノズルより窒素ガス雰囲気中(99.9%以
上)へ噴出し、噴出と同時に、ガス圧50kg/cm2
Gの窒素ガス(99.9%以上)を融液に対してガス/
液質量速度2.3の条件で噴出し、アトマイズした。こ
の時のガス線速度は、180m/秒であり、得られた粉
末の平均粒子径は12ミクロンであった。銀濃度は表面
より0.8,0.76,0.66,0.56,0.48
であり、表面の銀濃度はx=0.785であった。ま
た、平均の銀濃度はx=0.1であり、表面の銀濃度は
平均の銀濃度の7.8倍であった。また、平均の銅濃度
はy=0.89999、平均の(鉛+亜鉛)濃度はz=
0.00001であった。Example 3 53.95 g of silver particles and 285.74 of copper particles
68 g, lead particles (99.9% by weight or more) 0.00518
g and 0.0016325 g of zinc particles were put into a boron nitride crucible and heated to 1700 ° C. in a nitrogen atmosphere by high frequency induction heating to melt. The melt was ejected from a nozzle attached to the tip of the crucible into a nitrogen gas atmosphere (99.9% or more), and at the same time as the ejection, a gas pressure of 50 kg / cm 2
Nitrogen gas of G (99.9% or more) is added to the melt as gas /
It was jetted and atomized under the condition that the liquid mass velocity was 2.3. The gas linear velocity at this time was 180 m / sec, and the average particle diameter of the obtained powder was 12 microns. Silver concentration is 0.8, 0.76, 0.66, 0.56, 0.48 from the surface
And the surface silver concentration was x = 0.785. The average silver concentration was x = 0.1, and the surface silver concentration was 7.8 times the average silver concentration. Further, the average copper concentration is y = 0.89999, and the average (lead + zinc) concentration is z =
It was 0.00001.
【0035】得られた粉末の中、5ミクロン以下の粉末
10gとSiO2 −B2 O3 −Na 2 Oガラスフリット
0.1g、酸化ビスマス0.001g、酸化第一銅0.
001g,ブチラール樹脂0.02g、エチルセロソル
ブ1g,ブチルカルビトールアセテート1g、ステアリ
ン酸銅0.0001gを充分に混合してペースト状とし
た 得られたペーストを内部電極がパラジウムのチタン酸ス
トロンチウム系積層セラミックコンデンサーの外部電極
として塗布した。塗布後、800℃ 窒素雰囲気中で1
0分間焼成した(バーンアウトゾーン 150ppm酸
素ドープ 〜550℃)。Among the powders obtained, powders of 5 microns or less
10g and SiO2-B2O3-Na 2O glass frit
0.1 g, bismuth oxide 0.001 g, cuprous oxide 0.1.
001 g, butyral resin 0.02 g, ethyl cellosol
Bug 1g, Butyl carbitol acetate 1g, Steari
0.0001g of copper acidate was mixed thoroughly to form a paste
The obtained paste was used as the titanate powder whose internal electrode was palladium.
External electrodes of Tronium-based monolithic ceramic capacitors
Was applied as. After coating, 800 ° C in a nitrogen atmosphere 1
Burned for 0 minutes (burnout zone 150 ppm acid
Elementary dope ~ 550 ° C).
【0036】コンデンサーの容量は310nF規格値を
満足した。また、はんだ付け性は、初期、150℃ エ
ージング後共に良好であった。接着強度は、5kgあっ
た。The capacitance of the capacitor satisfied the standard value of 310 nF. The solderability was good both at the initial stage and after aging at 150 ° C. The adhesive strength was 5 kg.
【0037】[0037]
【実施例4】銀粒子53.9g,銅粒子285.74
g、ビスマス粒子(99.9重量%以上)0.1045
gをボロンナイトライドるつぼに入れ、窒素雰囲気中、
高周波誘導加熱を用いて1700℃まで加熱溶解した。
融液をるつぼ先端より窒素雰囲気中へ噴出した。噴出と
同時に、ボンベ入り窒素ガス40kg/cm2 Gを融液
に対してガス/液質量速度比3でアトマイズした。ノズ
ル出口でのガス先速度は200m/秒であった。得られ
た粒子の平均粒子径は12ミクロンであった。Example 4 53.9 g of silver particles and 285.74 of copper particles
g, bismuth particles (99.9% by weight or more) 0.1045
g in a boron nitride crucible, and in a nitrogen atmosphere,
It melt | dissolved by heating to 1700 degreeC using the high frequency induction heating.
The melt was jetted into the nitrogen atmosphere from the tip of the crucible. Simultaneously with the jetting, 40 kg / cm 2 G of nitrogen gas containing a cylinder was atomized to the melt at a gas / liquid mass velocity ratio of 3. The gas front velocity at the nozzle outlet was 200 m / sec. The average particle size of the obtained particles was 12 microns.
【0038】銀濃度は、表面より0.78,0.74,
0.66,0.56,0.42であり、表面の銀濃度は
0.76であった。また、平均の銀濃度はx=0.1、
平均の銅濃度はy=0.8999、平均のビスマス濃度
はz=0.0001であった。表面の銀濃度は、平均の
銀濃度の7.6倍であった。得られた粉末の中、3ミク
ロン以下の粉末10gとPbO−Al2 O3 −B2O3
−SrO−SiO2 ガラスフリット0.1g,酸化タリ
ウム0.0001g,PbO−SiO2 −K2 Oガラス
フリット0.1g、エチルセルロース0.01g、ヘキ
オシルセロソルブ3g、シランカップリング剤0.00
01gを充分に混合してペーストとした。The silver concentration is 0.78, 0.74, and
It was 0.66, 0.56, 0.42, and the surface silver concentration was 0.76. Also, the average silver concentration is x = 0.1,
The average copper concentration was y = 0.8999, and the average bismuth concentration was z = 0.0001. The silver concentration on the surface was 7.6 times the average silver concentration. Among the obtained powders, 10 g of powder having a particle size of 3 μm or less and PbO—Al 2 O 3 —B 2 O 3
-SrO-SiO 2 glass frit 0.1 g, thallium oxide 0.0001 g, PbO-SiO 2 -K 2 O glass frit 0.1 g, ethyl cellulose 0.01 g, hexosil cellosolve 3 g, silane coupling agent 0.00
01 g was mixed thoroughly to form a paste.
【0039】得られたペーストを内部電極が銅のチタン
酸カルシウム系積層セラミックコンデンサーの外部電極
として塗布した。塗布後、780℃ 窒素雰囲気中で1
0分間加熱焼成した(バーンアウトゾーン 200pp
m酸素ドープ 〜550℃)。コンデンサーの容量は2
90nFと規格値を満足した。また、はんだ付け性は初
期、150℃ エージング後でも良好であった。The obtained paste was applied as an external electrode of a calcium titanate-based monolithic ceramic capacitor having internal electrodes of copper. After coating, 1 at 780 ℃ in nitrogen atmosphere
Heated and baked for 0 minutes (burnout zone 200pp
m oxygen doping ~ 550 ° C). The capacity of the condenser is 2
The value was 90 nF, which satisfied the standard value. Further, the solderability was good at the initial stage even after aging at 150 ° C.
【0040】接着強度は、5kgと充分であった。The adhesive strength was 5 kg, which was sufficient.
【0041】[0041]
【実施例5】銀粒子21.6g、銅粒子50.8gをボ
ロンナイトライドるつぼに入れ、窒素雰囲気中で高周波
誘導加熱を用いて1700℃まで加熱溶解した。融液を
るつぼ先端より窒素ガス雰囲気中へ噴出した。噴出と同
時に、ガス圧20kg/cm 2 Gの窒素ガスを融液に対
してガス/液質量速度比3でアトマイズした。得られた
粉末の平均粒子径は20ミクロンであった。銀濃度は、
表面より0.8,0.75,0.6,0.55,0.4
8であり、表面の銀濃度は0.775であった。また、
平均の銀濃度は0.2、平均の銅濃度は0.8で、表面
の銀濃度は平均の銀濃度の3.8倍であった。Example 5 21.6 g of silver particles and 50.8 g of copper particles were added.
Ron Night Ride Put in a crucible, high frequency in nitrogen atmosphere
It melt | dissolved by heating to 1700 degreeC using induction heating. Melt
Ejected from the crucible tip into the nitrogen gas atmosphere. Same as a gush
Sometimes gas pressure 20kg / cm 2Apply nitrogen gas of G to the melt
And atomized at a gas / liquid mass velocity ratio of 3. Got
The average particle size of the powder was 20 microns. The silver concentration is
0.8, 0.75, 0.6, 0.55, 0.4 from the surface
The surface silver concentration was 0.775. Also,
The average silver concentration is 0.2, the average copper concentration is 0.8, and the surface
Silver concentration was 3.8 times the average silver concentration.
【0042】得られた粉末の中、10ミクロン以下の粉
末10g、エチルセルロース0.1g、ブチルカルビト
ール1g、PbO−B2 O3 −CaOガラスフリット
0.1gを充分に混合し、ペーストとした。得られたペ
ーストを内部電極が銅よりなるチタン酸バリウム系積層
セラミックコンデンサーの外部電極として塗布し、80
0℃窒素雰囲気中で10分間焼成した。Of the obtained powder, 10 g of a powder having a size of 10 μm or less, 0.1 g of ethyl cellulose, 1 g of butyl carbitol, and 0.1 g of PbO—B 2 O 3 —CaO glass frit were sufficiently mixed to obtain a paste. The obtained paste was applied as an external electrode of a barium titanate-based monolithic ceramic capacitor having internal electrodes made of copper,
It was baked for 10 minutes in a nitrogen atmosphere at 0 ° C.
【0043】コンデンサーの容量は、320nFと規格
値を満足した。また、はんだ付け性は良好であった。接
着強度は5kgと充分であった。The capacity of the capacitor was 320 nF, which satisfied the standard value. Also, the solderability was good. The adhesive strength was sufficient at 5 kg.
【0044】[0044]
【実施例6】実施例1で得られた粉末の中、5ミクロン
以下の粉末10gとPbO−ZnO−SiO2 −B2 O
3 ガラスフリット1g、メチルセルロース0.01g、
ヒドロキシエチルセルロース0.01g、フェノール樹
脂0.001g、アクリル樹脂0.5g、2、2、4−
トリメチル1、3−ペンタンジオールイソブチレート3
gを充分に混合し、内部電極が銅のチタン酸バリウム系
積層セラミックコンデンサーにDIP法で塗布した。塗
布後、900℃ 10分間 窒素雰囲気中で焼成した
(バーンアウトゾーン50ppm酸素ドープ)。Example 6 Among the powders obtained in Example 1, 10 g of powder having a size of 5 μm or less and PbO—ZnO—SiO 2 —B 2 O.
3 glass frit 1g, methylcellulose 0.01g,
Hydroxyethyl cellulose 0.01g, phenol resin 0.001g, acrylic resin 0.5g, 2, 2, 4-
Trimethyl 1,3-pentanediol isobutyrate 3
g was thoroughly mixed and applied to a barium titanate-based monolithic ceramic capacitor having internal electrodes of copper by the DIP method. After coating, it was baked at 900 ° C. for 10 minutes in a nitrogen atmosphere (burnout zone 50 ppm oxygen dope).
【0045】得られたコンデンサーの容量は、400n
Fと規格値が得られた。また、はんだ付け性は初期、1
50℃エージング後でも殆ど良好であった。接着強度
は、5kgと充分であった。The capacity of the obtained condenser is 400 n.
F and the standard value were obtained. Also, the solderability is 1
It was almost good even after aging at 50 ° C. The adhesive strength was 5 kg, which was sufficient.
【0046】[0046]
【実施例7】実施例4で得られた粉末の中3ミクロン以
下の粉末10gとPbO−B2 O3−SiO2 −ZnO
ガラスフリット0.8g、アルキッドフェノール樹脂
0.01g,アクリル樹脂0.1g,メチルセロソルブ
3gを充分に混合し、ペーストとした。得られたペース
トを内部電極がニッケルのチタン酸マグネシウム系積層
セラミックコンデンサーの外部電極として塗布した。塗
布後、900℃ 10分間窒素雰囲気中で加熱焼成した
(バーンアウトゾーン 120ppm酸素ドープ〜55
0℃)。得られたコンデンサーの容量は310nFとほ
ぼ規格値であった。また、はんだ付け性は、初期、15
0℃ エジング後でも良好であった。接着強度は、4k
gと充分であった。Example 7 10 g of powder having a particle size of 3 μm or less among the powder obtained in Example 4 and PbO—B 2 O 3 —SiO 2 —ZnO
0.8 g of glass frit, 0.01 g of alkyd phenol resin, 0.1 g of acrylic resin, and 3 g of methyl cellosolve were sufficiently mixed to obtain a paste. The obtained paste was applied as an external electrode of a magnesium titanate-based monolithic ceramic capacitor having an internal electrode of nickel. After the coating, it was heated and baked in a nitrogen atmosphere at 900 ° C. for 10 minutes (burnout zone 120 ppm oxygen dope to 55
0 ° C). The obtained capacitor had a capacity of 310 nF, which was almost a standard value. The solderability is 15
It was good even after aging at 0 ° C. Adhesive strength is 4k
g was sufficient.
【0047】[0047]
【実施例8】実施例3で得られた粉末の中10ミクロン
以下の粉末10gとPbO−MgO−SiO2 −B2 O
3 ガラスフリット0.1g、エチルセルロース0.01
g、エチルセロソルブアセテート3gを充分に混合し
て、ペーストとした。得られたペーストを銀パラジウム
内部電極を有するチタン酸バリウム系積層セラミックコ
ンデンサーの外部電極として塗布した。塗布後、850
℃ 窒素雰囲気中10分間加熱焼成した(バーンアウト
ゾーン 100ppm酸素ドープ 〜550℃)。[Embodiment 8] 10 g of a powder having a particle size of 10 μm or less among the powders obtained in Embodiment 3 and PbO—MgO—SiO 2 —B 2 O.
3 glass frit 0.1g, ethyl cellulose 0.01
g and 3 g of ethyl cellosolve acetate were thoroughly mixed to obtain a paste. The obtained paste was applied as an external electrode of a barium titanate-based monolithic ceramic capacitor having a silver-palladium internal electrode. 850 after application
℃ It baked for 10 minutes in a nitrogen atmosphere (burnout zone 100ppm oxygen dope 550 ℃).
【0048】得られたコンデンサーの容量は、330n
Fであり、半田付け性は、初期、150℃エージング後
でも良好であった。 接着強度は5kgと充分であっ
た。The obtained capacitor has a capacity of 330 n.
It was F, and the solderability was good even after the initial aging at 150 ° C. The adhesive strength was sufficient at 5 kg.
【0049】[0049]
【比較例1】市販銅粉末(平均粒子径5ミクロン)10
gとPbO−ZnO−B2 O3 ガラスフリット0.2
g、エチルセルロース0.01g、テルペノール1gを
充分に混合してペーストとした。得られたペーストを銀
−パラジウムを内部電極とするチタン酸バリウム系積層
セラミックコンデンサーの外部電極として塗布した。塗
布後、900℃ 窒素雰囲気中で焼成した。Comparative Example 1 Commercially available copper powder (average particle size 5 microns) 10
g and PbO-ZnO-B 2 O 3 glass frit 0.2
g, 0.01 g of ethyl cellulose, and 1 g of terpenol were sufficiently mixed to obtain a paste. The obtained paste was applied as an external electrode of a barium titanate-based multilayer ceramic capacitor having silver-palladium as an internal electrode. After coating, it was baked in a nitrogen atmosphere at 900 ° C.
【0050】得られたコンデンサーの容量は、1pFと
小さかった。また、はんだ濡れ性は、50%程度しか濡
れなかった。The capacity of the obtained capacitor was as small as 1 pF. The solder wettability was only about 50%.
【0051】[0051]
【比較例2】市販銀粉末(平均粒子径3ミクロン)10
gとPbO−ZnO−B2 O3 ガラスフリット0.2
g、エチルセルロース0.01g、テルペノール1gを
充分に混合しペーストとした。得られたペーストをニッ
ケルを内部電極とするチタン酸ストロンチウム系積層セ
ラミックコンデンサーの外部電極として塗布し、900
℃ 窒素雰囲気中で焼成した(バーンアウトゾーン 2
00ppm酸素ドープ 〜550℃)。[Comparative Example 2] Commercially available silver powder (average particle size: 3 microns) 10
g and PbO-ZnO-B 2 O 3 glass frit 0.2
g, 0.01 g of ethyl cellulose, and 1 g of terpenol were sufficiently mixed to prepare a paste. The obtained paste is applied as an external electrode of a strontium titanate-based multilayer ceramic capacitor having nickel as an internal electrode, and 900
℃ Fired in a nitrogen atmosphere (burnout zone 2
00 ppm oxygen dope to 550 ° C).
【0052】得られた積層セラミックコンデンサーの容
量は1pF以下と小さかった。The capacitance of the obtained monolithic ceramic capacitor was as small as 1 pF or less.
【0053】[0053]
【比較例3】実施例1で得られた粉末の中10ミクロン
以下の粉末10gとPbO−ZnO−B2 O3 ガラスフ
リット11g、エチルセルロース0.2g、オレイルア
ルコール2gを充分に混合し、ペーストとした。得られ
たペーストを銀−パラジウム内部電極を有するチタン酸
マグネシウム系積そうセラミックコンデンサーの外部電
極として塗布し、900℃ 窒素雰囲気中10分間焼成
した。Comparative Example 3 Of the powder obtained in Example 1, 10 g of a powder having a particle size of 10 μm or less, 11 g of PbO—ZnO—B 2 O 3 glass frit, 0.2 g of ethyl cellulose, and 2 g of oleyl alcohol were thoroughly mixed to prepare a paste. did. The obtained paste was applied as an external electrode of a magnesium titanate-based stacking ceramic capacitor having a silver-palladium internal electrode, and baked at 900 ° C. in a nitrogen atmosphere for 10 minutes.
【0054】得られたコンデンサー上にガラスが流れだ
しており、また、容量も測定不可能なくらい小さかっ
た。The glass was flowing over the obtained condenser, and the capacity was too small to be measured.
【0055】[0055]
【比較例4】実施例1で得られた粉末の中10ミクロン
以下の粉末10gとPbO−B2 O 3 ガラスフリット
0.0001g、アクリル樹脂1g、ブチルカルビトー
ルアセテート2gを充分に混合し、ペーストとした。得
られたペーストをニッケルを内部電極とするチタン酸バ
リウム系積層セラミックコンデンサーの外部電極として
塗布し、850℃で窒素雰囲気中で焼成した。 得られ
たコンデンサーの外部電極にはんだ付けしようとしたが
充分にはんだ付けができなかった。また、接着性は小さ
く0.1kg以下であった。[Comparative Example 4] 10 micron of the powder obtained in Example 1
The following powder 10g and PbO-B2O 3Glass frit
0.0001g, acrylic resin 1g, butyl carbitol
2 g of lu acetate was thoroughly mixed to form a paste. Profit
The resulting paste is a titanate bar with nickel as the internal electrode.
As an external electrode of a lithium-based monolithic ceramic capacitor
It was applied and baked at 850 ° C. in a nitrogen atmosphere. Obtained
I tried to solder to the external electrode of the capacitor
I couldn't solder enough. Also, the adhesiveness is small
It was 0.1 kg or less.
【0056】[0056]
【比較例5】銀粒子194.4g、銅粒子12.7gを
実施例1と同様な方法でアトマイズした。得られた粉末
の平均粒子径は、11ミクロンであった。銀濃度はx=
0.9、銅濃度はy=0.1であった。この粉末の中1
0ミクロン以下の粉末10gとPbO−ZnO−B2 O
3 ガラスフリット0.1g,エチルセルロース0.01
g、エチルセロソルブ2gを充分に混合しペーストとし
た。Comparative Example 5 194.4 g of silver particles and 12.7 g of copper particles were atomized in the same manner as in Example 1. The average particle size of the obtained powder was 11 microns. Silver concentration is x =
The copper concentration was 0.9 and y = 0.1. 1 of this powder
The following powder 10 g 0 microns and PbO-ZnO-B 2 O
3 glass frit 0.1g, ethyl cellulose 0.01
g and ethyl cellosolve 2 g were thoroughly mixed to obtain a paste.
【0057】得られたペーストをニッケルを内部電極と
するチタン酸バリウム系積層セラミックコンデンサーの
外部電極として塗布し、900℃ 10分間窒素雰囲気
中で焼成した。 コンデンサーの容量は1nFと規格値
よりはるかに小さかった。The obtained paste was applied as an external electrode of a barium titanate-based multilayer ceramic capacitor having nickel as an internal electrode and baked at 900 ° C. for 10 minutes in a nitrogen atmosphere. The capacitance of the condenser was 1 nF, which was much smaller than the standard value.
【0058】[0058]
【比較例6】銀粒子26.9456g、銅粒子301.
59325g、亜鉛粒子0.03265gを黒鉛るつぼ
に入れ、窒素雰囲気中で高周波誘導加熱を用いて170
0℃まで加熱溶解した。融液をるつぼ先端より空気中へ
噴出した。噴出と同時に、ガス圧40kg/cm2 Gの
空気を融液に対してガス/液質量速度比3で噴出し、ア
トマイズした。得られた粉末は、不定形で平均20ミク
ロンであった。銀濃度は、表面より0.0001,0.
0005,0.001,0.003,0.008で表面
の銀濃度は0.0003であった。平均の銀濃度は0.
05,銅濃度は0.9499、亜鉛濃度は0.0001
であり、表面の銀濃度は平均の銀濃度の0.006倍で
あって、表面の銀濃度はむしろ平均値より低かった。ま
た、銅は酸化されていた。Comparative Example 6 Silver particles 26.9456 g, copper particles 301.
59325 g and zinc particles 0.03265 g were put into a graphite crucible and heated in a nitrogen atmosphere at 170 by high frequency induction heating.
It melt | dissolved by heating to 0 degreeC. The melt was jetted into the air from the tip of the crucible. Simultaneously with the jetting, air having a gas pressure of 40 kg / cm 2 G was jetted to the melt at a gas / liquid mass velocity ratio of 3, and atomized. The resulting powder was amorphous and averaged 20 microns. The silver concentration was 0.0001,0.
The surface silver concentration was 0.0003, 0.001, 0.003, and 0.008, and was 0.0003. The average silver concentration is 0.
05, copper concentration 0.9499, zinc concentration 0.0001
The silver concentration on the surface was 0.006 times the average silver concentration, and the silver concentration on the surface was rather lower than the average value. Moreover, copper was oxidized.
【0059】得られた粉末の中10ミクロン以下の粉末
10gとPbO−B2 O3 ガラスフリット0.5gアク
リル樹脂0.1g,エチルセロソルブ1gを充分に混合
した。得られたペーストをニッケルを内部電極に持つチ
タン酸ストロンチウム系積層セラミックコンデンサーの
外部電極として塗布し、800℃窒素雰囲気中で焼成し
た。導電性が悪く、また、はんだ付けも悪かった。Among the obtained powders, 10 g of powder having a particle size of 10 μm or less, 0.5 g of PbO—B 2 O 3 glass frit, 0.1 g of acrylic resin, and 1 g of ethyl cellosolve were thoroughly mixed. The obtained paste was applied as an external electrode of a strontium titanate-based multilayer ceramic capacitor having nickel as an internal electrode and fired at 800 ° C. in a nitrogen atmosphere. The conductivity was poor and the soldering was poor.
【0060】[0060]
【発明の効果】本発明の銅ペーストは、耐酸化性、優れ
たはんだ付け性、内部電極とのマッチング性が良く、従
来なし得なかったニッケル、銀ーパラジウム、パラジウ
ム、銅を内部電極に有する積層セラミックコンデンサー
の外部電極として大いに有用である。INDUSTRIAL APPLICABILITY The copper paste of the present invention has good oxidation resistance, excellent solderability, and good matching with internal electrodes, and is a laminate having nickel, silver-palladium, palladium, and copper as internal electrodes, which could not be achieved in the past. It is very useful as an external electrode of a ceramic capacitor.
Claims (6)
Bi,Pb,Znより選ばれた1種以上であり、x,
y,zは原子比で表して、0.001≦x≦0.3、
0.7≦y≦0.999、0≦z≦0.005、x+y
+z=1である。)で表され、粒子表面の銀濃度が平均
の銀濃度の2.1倍以上で、かつ、粒子表面に向かって
銀濃度が増加する領域を有する銅合金粉末100重量部
に対して、ガラスフリット0.1〜40重量部及び有機
ビヒクルからなることを特徴とする積層セラミックコン
デンサー外部電極用ペースト。1. A general formula AgxCuyMz (where M is at least one selected from Bi, Pb and Zn, and x,
y and z are represented by an atomic ratio of 0.001 ≦ x ≦ 0.3,
0.7 ≦ y ≦ 0.999, 0 ≦ z ≦ 0.005, x + y
+ Z = 1. ), The glass frit is added to 100 parts by weight of a copper alloy powder having a silver concentration of 2.1 times or more the average silver concentration on the particle surface and having a region where the silver concentration increases toward the particle surface. A paste for a multilayer ceramic capacitor external electrode, comprising 0.1 to 40 parts by weight and an organic vehicle.
nO,SiO2 ,CaO,Al2 O3 ,BaO,Bi2
O3 ,Na2 O,K2 O,MgOより選ばれた1種以上
を含むことを特徴とする請求項1記載の積層セラミック
コンデンサー外部電極用ペースト。2. The glass frit is made of PbO, B 2 O 3 , Z.
nO, SiO 2 , CaO, Al 2 O 3 , BaO, Bi 2
The paste for an external electrode of a monolithic ceramic capacitor according to claim 1, comprising at least one selected from O 3 , Na 2 O, K 2 O and MgO.
リル樹脂、メチルセルロース、ヒドロキシエチルセルロ
ース、エチルセルロース誘導体、アルキッド樹脂、ブチ
ラール樹脂、フェノール樹脂、アルキッドフェノール樹
脂、木材ロジンより選ばれた1種以上を含むことを特徴
とする請求項1又は2記載の積層セラミックコンデンサ
ー外部電極用ペースト。3. The organic vehicle contains one or more selected from ethyl cellulose, acrylic resin, methyl cellulose, hydroxyethyl cellulose, ethyl cellulose derivative, alkyd resin, butyral resin, phenol resin, alkyd phenol resin, and wood rosin. The multilayer ceramic capacitor external electrode paste according to claim 1 or 2.
布後、焼成して外部電極として用いることを特徴とす
る、内部電極がニッケルからなる積層セラミックコンデ
ンサー。4. A multilayer ceramic capacitor in which an internal electrode is made of nickel, which is applied as an external electrode after being applied with the paste according to claim 1, 2 or 3.
布後、焼成して外部電極として用いることを特徴とす
る、内部電極がパラジウム、又は、銀−パラジウムから
なる積層セラミックコンデンサー。5. A multilayer ceramic capacitor in which the internal electrode is made of palladium or silver-palladium, which is used as an external electrode after being applied with the paste according to claim 1, 2 or 3.
布後、焼成して外部電極として用いることを特徴とす
る、内部電極が銅からなる積層セラミックコンデンサ
ー。6. A multilayer ceramic capacitor in which an internal electrode is made of copper, which is used by applying the paste according to claim 1, 2 or 3 and then firing it to form an external electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4044611A JPH05243079A (en) | 1992-03-02 | 1992-03-02 | Paste for external electrode of laminar ceramic capacitor, and capacitor using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4044611A JPH05243079A (en) | 1992-03-02 | 1992-03-02 | Paste for external electrode of laminar ceramic capacitor, and capacitor using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243079A true JPH05243079A (en) | 1993-09-21 |
Family
ID=12696242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4044611A Withdrawn JPH05243079A (en) | 1992-03-02 | 1992-03-02 | Paste for external electrode of laminar ceramic capacitor, and capacitor using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05243079A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0777242A2 (en) * | 1995-11-29 | 1997-06-04 | Matsushita Electric Industrial Co., Ltd | A ceramic electronic component and its manufacturing method |
| WO2005055257A1 (en) * | 2003-12-01 | 2005-06-16 | Murata Manufacturing Co., Ltd. | Conductive paste and laminated ceramic electronic component |
| JP2007087661A (en) * | 2005-09-20 | 2007-04-05 | Murata Mfg Co Ltd | Conductive paste and manufacturing method of ceramic electronic component using it |
| KR20140054798A (en) * | 2012-10-29 | 2014-05-09 | 삼성전기주식회사 | Conductive paste and multi-layered ceramic electronic parts fabricated by using the same |
| JP2019067829A (en) * | 2017-09-28 | 2019-04-25 | Tdk株式会社 | Multilayer ceramic electronic component |
| WO2024135397A1 (en) * | 2022-12-20 | 2024-06-27 | 株式会社村田製作所 | Multilayer ceramic electronic component, conductive material, and method for manufacturing multilayer ceramic electronic component |
-
1992
- 1992-03-02 JP JP4044611A patent/JPH05243079A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0777242A2 (en) * | 1995-11-29 | 1997-06-04 | Matsushita Electric Industrial Co., Ltd | A ceramic electronic component and its manufacturing method |
| WO2005055257A1 (en) * | 2003-12-01 | 2005-06-16 | Murata Manufacturing Co., Ltd. | Conductive paste and laminated ceramic electronic component |
| JP2007087661A (en) * | 2005-09-20 | 2007-04-05 | Murata Mfg Co Ltd | Conductive paste and manufacturing method of ceramic electronic component using it |
| KR20140054798A (en) * | 2012-10-29 | 2014-05-09 | 삼성전기주식회사 | Conductive paste and multi-layered ceramic electronic parts fabricated by using the same |
| JP2019067829A (en) * | 2017-09-28 | 2019-04-25 | Tdk株式会社 | Multilayer ceramic electronic component |
| WO2024135397A1 (en) * | 2022-12-20 | 2024-06-27 | 株式会社村田製作所 | Multilayer ceramic electronic component, conductive material, and method for manufacturing multilayer ceramic electronic component |
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Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |