JPH05254863A - Ceramic substrate, ceramic printed circuit board and its production - Google Patents
Ceramic substrate, ceramic printed circuit board and its productionInfo
- Publication number
- JPH05254863A JPH05254863A JP4089748A JP8974892A JPH05254863A JP H05254863 A JPH05254863 A JP H05254863A JP 4089748 A JP4089748 A JP 4089748A JP 8974892 A JP8974892 A JP 8974892A JP H05254863 A JPH05254863 A JP H05254863A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- substrate
- weight
- crystallized glass
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 239000000919 ceramic Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 90
- 239000000203 mixture Substances 0.000 claims abstract description 34
- 229910052878 cordierite Inorganic materials 0.000 claims abstract description 30
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 18
- 229910052661 anorthite Inorganic materials 0.000 claims abstract description 12
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical group [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000005388 borosilicate glass Substances 0.000 claims abstract description 11
- 238000010304 firing Methods 0.000 claims description 47
- 239000002994 raw material Substances 0.000 claims description 44
- 239000000843 powder Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 35
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000013329 compounding Methods 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 14
- 239000002002 slurry Substances 0.000 description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 238000005452 bending Methods 0.000 description 11
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 10
- 239000011575 calcium Substances 0.000 description 9
- 239000005355 lead glass Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000002270 dispersing agent Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 239000004014 plasticizer Substances 0.000 description 7
- 230000008054 signal transmission Effects 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000001354 calcination Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000002241 glass-ceramic Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- QYDYPVFESGNLHU-UHFFFAOYSA-N elaidic acid methyl ester Natural products CCCCCCCCC=CCCCCCCCC(=O)OC QYDYPVFESGNLHU-UHFFFAOYSA-N 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QYDYPVFESGNLHU-KHPPLWFESA-N methyl oleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC QYDYPVFESGNLHU-KHPPLWFESA-N 0.000 description 4
- 229940073769 methyl oleate Drugs 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000011550 stock solution Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000001112 coagulating effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000005587 carbonate group Chemical group 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Glass Compositions (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は電子回路用基板、電子部
品基板等のセラミックス基板、及びその基板に回路配線
が施されてなるセラミックス回路配線板に関するもので
あり、特に高周波回路基板、高速信号用回路基板等に用
いて好適な特性を有するセラミックス基板及びそのセラ
ミックス回路配線板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate such as an electronic circuit substrate, an electronic component substrate and the like, and a ceramic circuit wiring board in which circuit wiring is provided on the substrate, particularly a high frequency circuit substrate and a high speed signal. The present invention relates to a ceramics substrate having suitable characteristics for use as a circuit board for use in the same, and a ceramics circuit wiring board thereof.
【0002】[0002]
【従来の技術】アルミナ等のセラミックスを用いたセラ
ミックス基板はIC、LSI等の電子部品を実装素子と
する電子回路の実装用基板として使用されている。一
方、現在、電子機器分野では実装素子の高密度化、信号
伝送高速化の進展、移動体通信等の普及、高性能化に伴
う使用周波数帯域の高周波化が急速に進んでおり、実装
基板にも高密度配線化、高速化、高周波化への対応が求
められている。このような実装用基板についての信号の
高速伝送化、高周波化の要請に対しては基板材料(誘電
体層)の低誘電率化、低誘電損失化が強く求められる。
つまり、信号の伝播遅延時間は誘電率(ε)の平方根に
比例するため、信号を高速で伝送するには基板材料の低
誘電率化が不可欠となり、高周波電界化では高周波絶縁
性を高める必要から、やはり基板材料の低誘電率化が必
須となる。2. Description of the Related Art Ceramic substrates made of ceramics such as alumina are used as substrates for mounting electronic circuits having electronic components such as ICs and LSIs as mounting elements. On the other hand, in the electronic equipment field, on the other hand, high-density mounting elements, high-speed signal transmission, widespread use of mobile communication, etc. In addition, high density wiring, high speed, and high frequency are required. To meet the demands for high-speed signal transmission and high frequency for such mounting substrates, it is strongly required to lower the dielectric constant and lower the dielectric loss of the substrate material (dielectric layer).
In other words, since the propagation delay time of a signal is proportional to the square root of the dielectric constant (ε), it is necessary to lower the dielectric constant of the substrate material for high-speed signal transmission, and it is necessary to improve the high-frequency insulation in high-frequency electric fields. Again, it is essential to lower the dielectric constant of the substrate material.
【0003】また、誘電損失( tanδ)は信号の電送損
失に影響する。信号電流による回路近傍の基板材料に発
生する電磁界により信号電流が熱エネルギーに変換され
信号の電送損失の原因となる。この電送損失は誘電損失
及び周波数の2乗に比例するするため、高周波になるほ
ど大きくなる。したがって高周波用基板としては基板材
料の低誘電損失が不可欠となる。また、信号の高速伝播
には配線長を短くすること、つまり回路の高密度化が必
要となる。そのために基板上に出来る限り微細配線を形
成するか立体配線とすることが要望される。したがっ
て、いずれにしても基板表面は可能な限り平滑であるこ
とが必要となる。特に薄膜法にて回路を形成する場合は
基板表面を最高度に平滑に仕上げることが強く要求され
る。Further, the dielectric loss (tan δ) affects the transmission loss of signals. The signal current is converted into heat energy by the electromagnetic field generated in the substrate material near the circuit due to the signal current, which causes a signal transmission loss. Since this transmission loss is proportional to the dielectric loss and the square of the frequency, it becomes larger as the frequency becomes higher. Therefore, a low dielectric loss of the substrate material is essential for a high frequency substrate. Further, for high-speed signal propagation, it is necessary to shorten the wiring length, that is, to increase the circuit density. Therefore, it is required to form fine wiring as much as possible on the substrate or to form three-dimensional wiring. Therefore, in any case, the surface of the substrate needs to be as smooth as possible. In particular, when a circuit is formed by the thin film method, it is strongly required to finish the surface of the substrate as smooth as possible.
【0004】以上の高周波用基板及び高速信号伝送用基
板としての要求特性を数量的に考えたとき、1MHZ の
高周波領域にて従来から実装用基板として使われている
アルミナ基板では誘電率が約10と高く、一方低誘電損失
セラミックスとして知られているガラスセラミックスは
誘電率は約6と低いが誘電損失が0.005 と大きく、また
誘電率及び誘電損失が共に著しく小さい電気特性の優れ
た石英ガラス基板は成形が極めて難しく高価となり、ま
た前記機械的特性が一段と劣るという欠点がある。した
がって、高周波用基板、高速信号伝送用基板としては現
状では満足のいくものは得られていない。[0004] When considering more properties required as a high-frequency substrate and a high-speed signal transmission substrate quantitatively, dielectric constant of about at alumina substrate which is used as the mounting substrate conventionally at a high frequency region of 1 MH Z On the other hand, glass ceramics, which is known as low dielectric loss ceramics, has a high dielectric constant of about 6, but has a large dielectric loss of 0.005, and both the dielectric constant and the dielectric loss are extremely small. Has the drawbacks that it is extremely difficult to mold and becomes expensive, and that the mechanical properties are even worse. Therefore, as a substrate for high frequency and a substrate for high speed signal transmission, satisfactory ones have not been obtained at present.
【0005】さらに、実用上基板の機械特性も極めて重
要な具備要件であり、特に実装用基板として素子実装工
程や実際の使用に耐えるには1500kg/cm2の抗折強度が必
要とされる。さらに、実装用基板は回路の形成を厚膜法
にて行う場合がある。本法は銀系導電ペーストを基板上
に回路印刷し、800 〜900 ℃で焼成することにより回路
形成を行う方法である。基板としてはこの焼成時にそ
り、ねじれ、ゆがみ等の変形を生じないこと、すなわち
耐熱クリープ性が高いことが必須の要件となる。In addition, the mechanical properties of the substrate are also extremely important practical requirements, and in particular, a bending strength of 1500 kg / cm 2 is required to withstand the element mounting process and actual use as a mounting substrate. Further, the mounting substrate may form a circuit by a thick film method. This method is a method of forming a circuit by printing a circuit of a silver-based conductive paste on a substrate and baking it at 800 to 900 ° C. It is an essential requirement that the substrate not be deformed such as warped, twisted, or distorted during the firing, that is, have high thermal creep resistance.
【0006】また基板の平滑性についても厳しい要求が
あり、例えば薄膜用基板の場合、その表面における微細
な凹凸の振幅に関する中心線平均粗さとして定義される
表面粗さ(Ra)が0.2 μm 以下であることを要求され
る。ところが通常の方法で成形されたセラミックス基板
の表面はこの数値が1桁以上大きいので、現状の生産段
階ではこの基板表面を機械的に研磨したり、表面にガラ
スグレーズをコーティングする方法によって上記数値以
下の表面粗度になるように仕上げ加工を行っている。か
くして本実装用基板は加工工程が複雑になり、生産性が
著しく悪く、したがって価格的にも高価なものになって
いる。There is also a strict requirement for the smoothness of the substrate. For example, in the case of a thin film substrate, the surface roughness (Ra) defined as the center line average roughness related to the amplitude of fine irregularities on the surface is 0.2 μm or less. Required to be. However, the value of the surface of a ceramic substrate molded by a normal method is larger by one digit or more, so at the current production stage, the surface of this substrate is mechanically polished or a glass glaze is coated on the surface to reduce the value to less than the above value. Finishing is performed so that the surface roughness of As a result, the mounting substrate has complicated processing steps, is extremely poor in productivity, and is therefore expensive in price.
【0007】[0007]
【発明が解決しようとする課題】このような技術的背景
にあって本発明は低誘電率、低誘電損失の電気特性、高
強度、高耐熱クリープ性の機械・熱特性、及び高度の表
面平滑性を有する高周波用基板及び高速信号伝送用基板
として好適に使用し得るセラミックス基板、及びそれに
回路配線が施されたセラミックス回路配線板を提供する
ことを目的とするものであり、さらに、生産性の高いグ
リーンシート法にて従来より一段と低温にて焼成する安
価なセラミックス基板及びセラミックス回路配線板の製
造法、及び低温焼成により上記セラミックス基板及びセ
ラミックス回路配線板とすることが可能なグリーンシー
トを提供することを目的とするものである。Under such technical background, the present invention has a low dielectric constant, a low dielectric loss of electrical characteristics, high strength, high heat and creep mechanical and thermal characteristics, and a high degree of surface smoothness. It is an object of the present invention to provide a ceramic substrate suitable for use as a high-frequency substrate and a high-speed signal transmission substrate having excellent properties, and a ceramic circuit wiring board having circuit wiring provided thereon. Provided is a method for manufacturing an inexpensive ceramic substrate and a ceramic circuit wiring board, which are fired at a much lower temperature than before by a high green sheet method, and a green sheet which can be used as the ceramic substrate and the ceramic circuit wiring board by low temperature firing. The purpose is that.
【0008】[0008]
【課題を解決するための手段】本発明者は上記課題を解
決するため鋭意研究した結果、特定組成の結晶化ガラス
よりなるセラミックス基板が上記目的を達成することを
見出し、本発明に到達した。As a result of intensive studies to solve the above-mentioned problems, the present inventor has found that a ceramic substrate made of crystallized glass having a specific composition achieves the above-mentioned object, and arrived at the present invention.
【0009】すなわち、本発明は、酸化物換算でSi02
45〜65重量%、Al203 20〜30重量%、Ca0 5〜15重量
%、Mg0 5〜15重量%の化学組成を有する結晶化ガラス
を主成分とする結晶化ガラス成形体よりなり、本結晶化
ガラスの主結晶がアノーサイト、コージェライトα及び
コージェライトβからなることを特徴とするセラミック
ス基板、及び上記結晶化ガラスを主成分とする結晶化ガ
ラス成形体に回路配線が施されてなるセラミックス回路
配線板を要旨とするものであり、さらに酸化物換算でSi
02 45〜65重量%、 Al2O3 20 〜30重量%、Ca0 5〜15
重量%、Mg0 5〜15重量%の化学組成を有するガラス粉
末を主成分とするガラス粉末原料に可塑・凝結性組成物
が配合されてなるグリーンシートを要旨とするものであ
り、さらに、本グリーンシート、あるいは本グリーンシ
ートに回路配線加工を施したグリーンシート回路配線加
工体、を焼成温度 900〜1000℃で 0.7〜20時間、又は焼
成温度1000〜1200℃で10〜40分間焼成することを特徴と
する結晶化ガラスからなるセラミックス基板、あるいは
セラミックス回路配線板の製造法を要旨とするものであ
る。That is, the present invention uses SiO 2 in terms of oxide.
A crystallized glass molded body whose main component is a crystallized glass having a chemical composition of 45 to 65% by weight, Al 2 0 3 20 to 30% by weight, Ca 0 5 to 15% by weight, and Mg 0 5 to 15% by weight, The main crystal of the present crystallized glass is made of anorthite, cordierite α and cordierite β, and a ceramic substrate, and the crystallized glass molded body containing the crystallized glass as a main component is provided with circuit wiring. Is a ceramic circuit wiring board consisting of
0 2 45 to 65% by weight, Al 2 O 3 20 to 30% by weight, Ca 05 to 15
The present invention is directed to a green sheet comprising a glass powder raw material whose main component is a glass powder having a chemical composition of 50% by weight and Mg0 5 to 15% by weight, and a plasticizing and coagulating composition. A sheet or a green sheet circuit wiring processed body obtained by subjecting this green sheet to circuit wiring is fired at a firing temperature of 900 to 1000 ° C for 0.7 to 20 hours or at a firing temperature of 1000 to 1200 ° C for 10 to 40 minutes. The gist is a method for manufacturing a ceramic substrate or a ceramic circuit wiring board made of crystallized glass.
【0010】以下、本発明を詳細に説明する。本発明の
セラミックス基板あるいはセラミックス回路配線板基材
は酸化物換算でSi02 45〜65重量%、 Al2O3 20 〜30重
量%、Ca0 5〜15重量%、Mg0 5〜15重量%の化学組成
を有する結晶化ガラスを主成分とする結晶化ガラス成形
体よりなる。ここで上記化学組成を有する結晶化ガラス
(以下、本結晶化ガラスと称する)は珪素 Si 、アルミ
ニウム Al 、カルシウム Ca 、マグネシュウム Mg 、及
び酸素0よりなる単一セラミックス化合物であるが、そ
れを前記各金属の酸化物の混成体の形で表現したときに
前記各重量%組成にて主として表される構造体であっ
て、場合によっては後記する原料由来の炭酸基、水酸基
等の陰イオン基と前記各金属陽イオン基との塩類よりな
る微量の不純物が混在こともある。The present invention will be described in detail below. The ceramic substrate or the ceramic circuit wiring board base material of the present invention has a chemical composition of SiO 2 45 to 65% by weight, Al 2 O 3 20 to 30% by weight, Ca 0 5 to 15% by weight, and Mg 0 5 to 15% by weight in terms of oxide. It is composed of a crystallized glass molded body whose main component is crystallized glass having a composition. Here, the crystallized glass having the above chemical composition (hereinafter referred to as the present crystallized glass) is a single ceramic compound composed of silicon Si, aluminum Al, calcium Ca, magnesium Mg, and oxygen 0. When expressed in the form of a hybrid of metal oxides, the structure is mainly represented by the above-mentioned respective weight% compositions, and in some cases, a carbonate group derived from a raw material described later, an anion group such as a hydroxyl group and the above A trace amount of impurities consisting of salts with each metal cation group may be mixed.
【0011】本結晶化ガラスは少なくとも室温近傍にて
完全に非晶質状、あるいは極わずかにに結晶の存在する
準非晶質状であり、しかもある温度以上の熱処理により
結晶化が顕在化する上記化学組成を有するガラス(以
下、本潜在結晶ガラスと称する。)が本発明の焼成処理
によって結晶化したもので、結晶相と非晶相とが混在し
た複相組成体からほとんど完全に結晶した準単相組成体
までのガラス構造体を意味する。The present crystallized glass is completely amorphous at least near room temperature or quasi-amorphous with a slight amount of crystals, and crystallization becomes apparent by heat treatment at a certain temperature or higher. A glass having the above chemical composition (hereinafter referred to as the present latent crystal glass) was crystallized by the firing treatment of the present invention, and was almost completely crystallized from a multiphase composition in which a crystalline phase and an amorphous phase were mixed. It means a glass structure up to a quasi-single phase composition.
【0012】本発明のセラミックス基板あるいはセラミ
ックス回路配線板基材は上記した本結晶化ガラスを主成
分とするが、その存在率は80重量%以上が好ましい。も
ちろん、 100重量%の結晶化ガラス成形体、すなわち本
結晶化ガラス単体にても本発明の効果は充分に発現され
る。本結晶化ガラスが80重量%未満になると前記した電
気特性及び機械・熱特性が低下し易くなる。The ceramic substrate or the ceramic circuit wiring board base material of the present invention contains the above-mentioned crystallized glass as a main component, and its abundance is preferably 80% by weight or more. Of course, the effect of the present invention is sufficiently exhibited even with 100% by weight of the crystallized glass molded product, that is, the present crystallized glass alone. If the amount of the present crystallized glass is less than 80% by weight, the above-mentioned electrical properties and mechanical / thermal properties are likely to deteriorate.
【0013】本結晶化ガラス以外の成分としては他のガ
ラス、あるいはガラス・セラミックスが好ましいが、特
に硼珪酸ガラスが優れている。すなわち本結晶化ガラス
100〜80重量%と硼珪酸ガラス0〜20重量%よりなる結
晶化ガラス相と非晶質ガラス相が相互に入り混じった混
成体は、本結晶化ガラスに比較して抗折強度、耐熱クリ
ープ性等の機械・熱特性が殆ど同程度で表面平滑性及び
誘電特性がさらに優れた性能を有するものとなる。Other glass or glass-ceramics are preferable as components other than the crystallized glass, and borosilicate glass is particularly excellent. That is, this crystallized glass
Compared to the present crystallized glass, the composite of 100-80% by weight and 0-20% by weight of borosilicate glass in which the crystallized glass phase and the amorphous glass phase are mixed with each other has a higher bending strength and heat-resistant creep. The mechanical and thermal characteristics such as properties are almost the same, and the surface smoothness and the dielectric characteristics are more excellent.
【0014】結晶化ガラス相の主結晶は CaO・Al203 ・
2Si02 組成のアノーサイト、2Mg0・2Al203・5Si02 組成
のコージェライトα及び2Mg0・2Al203・6Si02 組成のコ
ージェライトβよりなる。それ以外の結晶としては2Mg0
・2Al203・5Si02 組成のインディアライトが少量存在す
る。これら各結晶の同定はX線回折像によって行うこと
ができる。すなわち回折角とそのX線強度との関係を表
すX線回折図において各結晶に対応する特性ピークとし
て回折角 2θで表してアノーサイトは28.0°、コージェ
ライトαは10.4°、コージェライトβは26.0°、インデ
ィアライトは29.6°の位置に現れる。このような同定の
例としては図1に明示した通りである。[0014] The main crystal of crystallized glass phase CaO · Al 2 0 3 ·
2Si0 2 Composition anorthite of, consisting 2Mg0 · 2Al 2 0 3 · 5Si0 2 composition of cordierite α and 2Mg0 · 2Al 2 0 3 · 6Si0 2 cordierite composition beta. 2Mg0 for other crystals
· 2Al 2 0 3 · 5Si0 2 Composition of indialite is present in small amounts. Each of these crystals can be identified by an X-ray diffraction image. That is, in the X-ray diffraction diagram showing the relationship between the diffraction angle and its X-ray intensity, the characteristic peak corresponding to each crystal is represented by the diffraction angle 2θ, anorthite is 28.0 °, cordierite α is 10.4 °, and cordierite β is 26.0 °. °, Indialite appears at 29.6 °. An example of such identification is as clearly shown in FIG.
【0015】このようなアノーサイト、及びコージェラ
イトを主結晶とする結晶化ガラスあるいは本結晶化ガラ
スと硼珪酸ガラス等の非晶質ガラスとの混成体はそれら
結晶の存在そのものが前記した優れた電気及び力学・熱
特性を発現するのみならず、単一相あるいは両異種ガラ
ス相が均質かつ高密度に入り混じり充填し合った組織を
有し、それらの界面は強固に密着している。当然のこと
ながら、通常のセラミックス基板にてよく認められる空
孔、クラック等の欠陥部は殆ど存在しない。したがって
本発明のセラミックス基板及びセラミックス回路配線板
の基板は本来結晶化ガラスながら、高純度アルミナ基板
のような高性能のセラミックス基板並の機械的強度と耐
薬品性を有する。Such anorthite and a crystallized glass having cordierite as a main crystal or a hybrid of the present crystallized glass and an amorphous glass such as borosilicate glass are excellent in the existence of the crystals themselves. In addition to exhibiting electrical, mechanical and thermal properties, it has a structure in which a single phase or both types of glass phases are homogeneous and have a high density and are mixed and filled, and their interfaces are firmly adhered. As a matter of course, there are almost no defects such as holes and cracks that are often observed in ordinary ceramic substrates. Therefore, although the ceramic substrate and the substrate of the ceramic circuit wiring board of the present invention are essentially crystallized glass, they have mechanical strength and chemical resistance comparable to those of high-performance ceramic substrates such as high-purity alumina substrates.
【0016】本発明のセラミックス回路配線板は上記し
た本結晶化ガラスを主成分とする結晶化ガラス成形体に
一体的に回路配線が施された構造体である。この結晶化
ガラス成形体とはシート状又はボード状の成形体であ
り、また回路配線とは上記成形体の表面又は内部に一段
乃至多数段の層状の回路が一体的に形成され、必要に応
じて複数の層間にそれらを結ぶ一個乃至多数個の棒状又
は管状の導体すなわちバイアホールが形成されたもので
ある。またここでいう回路とは金、銀等の良導電性金属
の帯状に連なった焼結体よりなる導体、あるいは必要に
応じてその一部に層状の金属、炭素、あるいはセラミッ
クスよりなる抵抗体及び/又はコンデンサ等の受動部品
が一体的に接続された電気回路である。The ceramic circuit wiring board of the present invention is a structure in which circuit wiring is integrally provided on the above-mentioned crystallized glass molded body containing the present crystallized glass as a main component. The crystallized glass molded body is a sheet-shaped or board-shaped molded body, and the circuit wiring is a layered circuit of one step or multiple steps integrally formed on the surface or inside of the molded body, and as necessary. Thus, one or a plurality of rod-shaped or tubular conductors, that is, via holes connecting them are formed between a plurality of layers. Further, the circuit here means a conductor made of a sintered body of a good conductive metal such as gold or silver, which is continuous in a strip shape, or a resistor made of a layered metal, carbon, or ceramics in a part thereof if necessary, and And / or an electric circuit in which passive components such as a capacitor are integrally connected.
【0017】本発明のグリーンシートは酸化物換算でSi
02 45〜65重量%、Al2O3 20〜30重量%、Ca0 5〜15重
量%、Mg0 5〜15重量%の化学組成を有するガラス粉末
を主成分とするガラス粉末原料に可塑・凝結性組成物が
配合された可撓性のシートであって、特に平均粒径が数
μm 以下、好ましくは2μm 以下の本潜在結晶ガラス10
0〜80重量%と硼珪酸ガラス 0〜20重量%よりなるガラ
ス粉末原料90〜80重量%と可塑・凝結性組成物10〜20重
量%とが配合されたシートが好適に使用される。The green sheet of the present invention contains Si in terms of oxide.
Plasticizing and condensing glass powder raw material whose main component is glass powder having chemical composition of 0 2 45 to 65% by weight, Al 2 O 3 20 to 30% by weight, Ca 0 5 to 15% by weight, and Mg 0 5 to 15% by weight. 10. A latent sheet of the present invention, which is a flexible sheet containing a functional composition and has an average particle size of several μm or less, preferably 2 μm or less.
A sheet in which 90 to 80% by weight of a glass powder raw material consisting of 0 to 80% by weight and 0 to 20% by weight of borosilicate glass and 10 to 20% by weight of a plastic / coagulable composition are preferably used.
【0018】ここで可塑・凝結性組成物とは本グリーン
シートの製造工程にて使用する結合剤、可塑剤、分散
剤、溶媒等の機能剤の配合液である成形助剤の同シート
成形仕上がり後の溶媒蒸発残留物であって、ガラス粉末
原料の粒子間を凝結し、シート形態を保つと共にシート
に可塑性と孔あけ・外形加工、回路印刷加工等の加工に
対する加工性とを付与する機能を有する物質である。本
グリーンシートにおいて可塑・凝結性組成物はガラス粉
末原料の粒子間にほぼ均一に充填した状態にて配合され
ている。本グリーンシートの厚みは約0.1 〜1.0 mm、密
度は約1.8 g/cm3 程度のものが好適である。Here, the plasticizing and coagulable composition is a sheet formed by the molding aid, which is a mixed solution of a functional agent such as a binder, a plasticizer, a dispersant, and a solvent used in the production process of the green sheet. It is a solvent evaporation residue afterwards, which has the function of condensing the particles of the glass powder raw material, maintaining the sheet shape, and imparting plasticity to the sheet and processability for processing such as punching / outline processing and circuit printing processing. It is a substance that has. In the present green sheet, the plasticizing and coagulating composition is blended in a state where the particles of the glass powder raw material are filled almost uniformly. The green sheet preferably has a thickness of about 0.1 to 1.0 mm and a density of about 1.8 g / cm 3 .
【0019】次に本発明の製造法を詳細に説明する。本
発明のセラミックス基板は前記した本結晶化ガラスの粉
末を焼成することによって得られるが、そのままで所定
の成形体の形を整えることは難しいので、予め成形した
グリーンシートを焼成する方法を採用するのが望まし
い。Next, the manufacturing method of the present invention will be described in detail. The ceramic substrate of the present invention is obtained by firing the powder of the present crystallized glass, but it is difficult to adjust the shape of a predetermined molded body as it is. Therefore, a method of firing a preformed green sheet is adopted. Is desirable.
【0020】本発明のガラス粉末原料は酸化物換算でSi
02 45〜65重量%、 Al203 20〜30重量%、Ca0 5〜15
重量%、Mg0 5〜15重量%の化学組成を有するガラス、
すなわち本潜在結晶ガラスの粉末、あるいは本潜在結晶
ガラス粉末 100〜80重量%と硼珪酸ガラス粉末 0〜20重
量%よりなる混合粉末ガラスを用いる。The glass powder raw material of the present invention is Si in terms of oxide.
0 2 45 to 65% by weight, Al 2 0 3 20 to 30% by weight, Ca 0 5 to 15%
Glass having a chemical composition of wt.%, Mg 0 5 to 15 wt.%,
That is, a powder of the present latent crystal glass or a mixed powder glass consisting of 100 to 80% by weight of the present latent crystal glass powder and 0 to 20% by weight of borosilicate glass powder is used.
【0021】本潜在結晶ガラスは前記した通り室温近傍
では完全な非晶質状あるいは極わずかに結晶の存在する
準非晶質状の上記化学組成を有するガラスであるが、軟
化温度以上に加熱、すなわち焼成することにより結晶化
ガラスとなるガラス質物質であり、硼珪酸ガラスは結晶
化能のない通常の非晶質ガラスである。As described above, the latent crystal glass is a glass having the above-mentioned chemical composition of a completely amorphous state or a quasi-amorphous state in which very few crystals are present near room temperature, but it is heated above the softening temperature, That is, it is a vitreous substance that becomes a crystallized glass by firing, and borosilicate glass is a normal amorphous glass having no crystallization ability.
【0022】本潜在結晶ガラスは珪砂(Si02用原料)、
水酸化アルミニウム( Al203用原料)、炭酸カルシウム
(Ca0用原料)、炭酸マグネシウム(Ma0用原料)等の
原料を上記本潜在結晶ガラスの酸化物の組成を満足する
ように所要量秤量し、タンク炉、ルツボ等の溶融容器に
て溶融後均質化し、これを鋳型にいれてキャスティング
し、得られたガラスブロックをロールクラッシャーで粗
粉砕し、次いでジェットミル等の精粉砕機にて例えば粒
径10μm まで粉砕して調製する。[0022] The present potential crystal glass is silica sand (Si0 raw materials for 2),
Aluminum hydroxide (Al 2 0 3 material for), calcium carbonate (raw material Ca0), a raw material such as magnesium carbonate (raw material Ma0) was required amount weighed so as to satisfy the composition of the oxides of the present latent crystal glass , Homogenize after melting in a melting vessel such as a tank furnace or crucible, cast this in a mold, roughly crush the obtained glass block with a roll crusher, and then with a fine crusher such as a jet mill Prepare by grinding to a diameter of 10 μm.
【0023】このガラス粉末原料90〜80重量%に対して
結合剤、可塑剤、分散剤等の配合剤を10〜20重量%、溶
媒をガラス粉末原料100 重量%に対して80〜100 重量%
配合し、湿式ボールミル等の湿式粉砕装置にて湿式粉砕
・混合する。この際ガラス粉末原料の平均粒径が数μm
、好ましくは2μm 以下になるまで粉砕を続ける。こ
れをそのまま、あるいは必要に応じて脱泡、粘度調節等
の操作をさらに行って、原料スラリー(混合スリップ)
が調製される。ここで結合剤とはグリーンシートにおい
てガラス粉末原料の粉末粒子間を結合してシート形態を
保つ役目を果たす機能剤であって、ポリビニールブチラ
ール、ポリアクリル酸メチル樹脂等が用いられる。90 to 80% by weight of the glass powder raw material, 10 to 20% by weight of a compounding agent such as a binder, a plasticizer and a dispersant, and 80 to 100% by weight of a solvent based on 100% by weight of the glass powder raw material.
The ingredients are blended and wet-milled and mixed by a wet-milling device such as a wet ball mill. At this time, the average particle diameter of the glass powder raw material is several μm
Grinding is continued until it becomes less than 2 μm. Raw slurry (mixing slip) as it is or by further performing operations such as defoaming and viscosity adjustment as necessary.
Is prepared. Here, the binder is a functional agent that bonds the powder particles of the glass powder raw material in the green sheet to maintain the sheet form, and polyvinyl butyral, polymethyl acrylate resin, etc. are used.
【0024】また、可塑剤とはグリーンシートの可塑性
及び加工性を向上させる機能剤であってジブチルフタレ
ート(DBP)、ジオクチルフタレート(DOP)等が
用いられる。また、分散剤とは原料スラリーにおいてガ
ラス粉末原料の溶媒への分散性を向上させる機能剤であ
って、オレイン酸メチル等が用いられる。また、溶媒と
は原料スラリーにおいて(1)上記各成形助剤を溶解す
る、(2)ガラス粉末原料を分散させ原料スラリーに流
動性を付与する、(3)キャスティング過程にて蒸発し
て固形のシート形態を形成する、等の機能を有する機能
剤であって、トルエン、メチルエチルケトン、エチルア
ルコール、プロピルアルコール、アゼオトロープ等の有
機溶媒あるいはこれらの混合液が用いられる。成形助剤
としては、上記以外に必要に応じて焼結助剤、印刷性改
良剤等の機能剤を配合することも有効である。The plasticizer is a functional agent for improving the plasticity and processability of the green sheet, and dibutyl phthalate (DBP), dioctyl phthalate (DOP) and the like are used. The dispersant is a functional agent that improves the dispersibility of the glass powder raw material in the solvent in the raw material slurry, and methyl oleate or the like is used. Further, the solvent means (1) dissolving each of the above molding aids in the raw material slurry, (2) dispersing the glass powder raw material to impart fluidity to the raw material slurry, and (3) evaporating and solidifying in the casting process. It is a functional agent having a function of forming a sheet form, and an organic solvent such as toluene, methyl ethyl ketone, ethyl alcohol, propyl alcohol, azeotrope or a mixed solution thereof is used. As the molding aid, it is also effective to add a functional agent such as a sintering aid or a printability improving agent, if necessary, in addition to the above.
【0025】このようにして調整された原料スラリーを
スラリー計量・供給装置、ドクターブレード、キャリヤ
ーテープコンベイヤー及び加熱乾燥炉を備えたキャステ
ィング装置に供給しグリーンシートを成形する。ドクタ
ーブレードにて所定厚さにキャスティングされたスラリ
ーは乾燥工程にて溶媒が蒸発し、残った結合剤、可塑
剤、分散剤等の成形助剤の残留分、すなわち可塑・凝結
性組成物がガラス粉末原料の粒子間に充填して、引張等
の外力に対する抗張力と、孔あけ、切断、回路印刷等の
加工に対する加工性と適度の硬さと可撓性とを有するグ
リーンシートとなる。The raw material slurry thus prepared is supplied to a casting device equipped with a slurry measuring / supplying device, a doctor blade, a carrier tape conveyor and a heating / drying furnace to form a green sheet. The slurry cast in a predetermined thickness with a doctor blade evaporates the solvent in the drying process, and the remaining binder, plasticizer, dispersant and other molding aids remain, that is, the plastic / caking composition is glass. It is filled between the particles of the powder raw material to form a green sheet having tensile strength against external force such as tension, processability for processing such as punching, cutting, circuit printing, and appropriate hardness and flexibility.
【0026】かくして得られたグリーンシートはそのま
ま、あるいは孔あけ加工、外形加工等の一次加工を施し
た後、焼成してセラミックス基板とする。あるいは同一
次加工後、同基板の孔を導体化し基板表面に回路配線を
形成し、そのまま、あるいは必要に応じて多層積層成形
して後、焼成してセラミックス回路配線板に加工する。
なお、通常は焼成に先立って可塑・凝結性組成物を焼却
除去する脱脂処理を伴う。The green sheet thus obtained is used as it is, or after being subjected to primary processing such as punching and outer shape processing, it is fired to obtain a ceramic substrate. Alternatively, after the same subsequent processing, the holes of the same substrate are made conductive and circuit wiring is formed on the surface of the substrate, and as it is, or if necessary, multilayer lamination molding is performed and then firing is performed to process into a ceramic circuit wiring board.
In addition, usually, a degreasing treatment for incineration and removal of the plastic / caking composition is performed prior to firing.
【0027】ここで孔あけ加工はドリル、パンチ、プレ
ス打抜き、電子線ビームあるいはレーザー光ビーム等の
手段にて基板の両面に貫通するスルーホールを形成する
加工であり、外形加工はトリミング等の加工である。ま
た、基板表面の回路は銅、銀、金、パラジューム、モリ
ブデン、タングステン等の良電導性の金属導体よりなる
帯状被膜、あるいは必要に応じてその一部に抵抗体、及
び/又はコンデンサとしての機能を果たす帯状被膜を含
む上記帯状被膜よりなり、これら回路の形成法としては
印刷法、写真によるドライフィルムレジスト法、液状フ
ォトレジスト法等の方法による厚膜法、あるいは化学メ
ッキ法、蒸着法、スパッタ法、イオンプレーティング
法、CVD法等の方法による薄膜法によって施される。
これら各方法のうちで特に導電性ペーストを用いた印刷
回路形成法が実用性の点で優れている。孔の導体化、す
なわちバイアホール形成は印刷法、真空吸引法、加圧充
填法等の方法により壁面メタライズあるいは導電ペース
ト充填を行うことにより達成するものである。多層積層
成形は回路配線を施したグリーンシートを2乃至数層積
層し50〜150Pa の圧力を負荷して成形するものである。Here, the drilling process is a process of forming through holes penetrating both sides of the substrate by means of a drill, punch, press punching, electron beam or laser light beam, and the external process is a process such as trimming. Is. In addition, the circuit on the surface of the substrate is a band-shaped film made of a metal conductor having good electric conductivity such as copper, silver, gold, palladium, molybdenum, or tungsten, or if necessary, a part of the film functions as a resistor and / or a capacitor. The above band-shaped film including the band-shaped film that fulfills the above-mentioned purpose, and as a method for forming these circuits, a thick film method such as a printing method, a dry film resist method by photography, a liquid photoresist method, or a chemical plating method, a vapor deposition method, or a sputtering method is used. Method, ion plating method, CVD method, or other thin film method.
Among these methods, the printed circuit forming method using a conductive paste is particularly excellent in practicality. The conversion of the holes into conductors, that is, the formation of via holes is achieved by performing wall surface metallization or conductive paste filling by a method such as a printing method, a vacuum suction method, or a pressure filling method. The multi-layer lamination molding is one in which two to several layers of green sheets with circuit wiring are laminated and molded by applying a pressure of 50 to 150 Pa.
【0028】これらセラミックス基板あるいはセラミッ
クス回路配線板の焼成は、900 〜1200℃の空気、水素、
窒素等の不活性ガスあるいは還元性燃焼ガス雰囲気中に
て行われる。通常は1000〜1200℃で10〜40分間の焼成が
好適であるが、特に低温での焼成を必要とする場合は 9
00〜1000℃で0.7 〜20時間の焼成条件を採用するのが好
ましい。The firing of these ceramic substrates or ceramic circuit wiring boards is carried out at 900 to 1200 ° C. with air, hydrogen,
It is carried out in an atmosphere of an inert gas such as nitrogen or a reducing combustion gas. Normally, baking at 1000 to 1200 ° C for 10 to 40 minutes is suitable, but if baking at a low temperature is required,
It is preferable to employ firing conditions of 0.7 to 20 hours at 00 to 1000 ° C.
【0029】上記の焼成によってグリーンシートのガラ
ス粉末原料粒子の間隙に存在した可塑・凝結性組成物は
蒸発・分解して気化し、ガラス粒子が焼結する。この際
硼珪酸ガラスの粒子は非晶質状のガラス状にて本潜在結
晶ガラス粒子の間隙に充填した非晶質ガラス相となり、
本潜在結晶ガラス粒子は結晶と非晶質ガラスが混在した
結晶化ガラス相となる。By the above firing, the plastic / coagulable composition present in the gaps between the glass powder raw material particles of the green sheet is evaporated / decomposed and vaporized, and the glass particles are sintered. At this time, the borosilicate glass particles become an amorphous glass phase, which is an amorphous glass phase and is filled in the gaps between the latent crystal glass particles.
The latent crystal glass particles are a crystallized glass phase in which crystals and amorphous glass are mixed.
【0030】本結晶化ガラス相の結晶は複数の異なった
結晶の混成体であるが、その主結晶はアノーサイトとα
型及びβ型のコージェライトよりなる。これらの各結晶
の存在率は焼成時の焼成条件によって左右される。すな
わち前記した標準的な焼成条件の場合、本発明の基板は
焼成温度 950〜1000℃にて結晶化を開始し、アノーサイ
トとコージェライトの混成体となり、焼成温度がさらに
高くなって1200℃を超えると著しくインディアライトが
増加する。上記α型及びβ型よりなるコージェライト系
結晶に関しては互いに変態の関係にあるが、焼成条件に
応じて存在比が変化する、すなわち焼成温度が1000℃以
下ではコージェライトβがコージェライトαに比較して
圧倒的に多いが、それより高温になるとコージェライト
βが減少するとともにコージェライトαが増加し、焼成
温度1200℃を超えると殆どコージェライトβが無くなっ
てコージェライトαのみとなる。The crystal of the present crystallized glass phase is a hybrid of a plurality of different crystals, the main crystals of which are anorthite and α.
Type and β type cordierite. The abundance of each of these crystals depends on the firing conditions during firing. That is, in the case of the standard firing conditions described above, the substrate of the present invention starts to crystallize at a firing temperature of 950 to 1000 ° C. and becomes a hybrid of anorthite and cordierite, and the firing temperature is further increased to 1200 ° C. When it exceeds, India light increases remarkably. Although the cordierite-based crystals composed of α-type and β-type are in a transformation relationship with each other, the abundance ratio changes depending on the firing conditions, that is, cordierite β is compared to cordierite α when the firing temperature is 1000 ° C or lower. However, when the temperature is higher than that, cordierite β decreases and cordierite α increases, and when the firing temperature exceeds 1200 ° C., cordierite β almost disappears and only cordierite α is left.
【0031】前記した1200℃を超える焼成温度にて多量
に生成するインディアライト結晶の存在は機械的強度特
性及び表面平滑性に好ましくない影響を及ぼすので、12
00℃を超える焼成温度は好ましくない。また焼成温度が
900℃未満になると表面平滑性は良いが、結晶の比率が
低下して十分な機械強度が得られなくなるので、好まし
くない。Since the presence of a large amount of indialite crystals at the above-mentioned firing temperature of more than 1200 ° C. has an unfavorable effect on the mechanical strength properties and surface smoothness,
Baking temperatures above 00 ° C are not preferred. Also, the firing temperature
When the temperature is lower than 900 ° C, the surface smoothness is good, but the ratio of crystals is reduced and sufficient mechanical strength cannot be obtained, which is not preferable.
【0032】[0032]
【実施例】以下本発明を実施例によりさらに具体的に説
明する。以下の実施例において%は重量%を示す。 実施例1 Si02 55%、 Al203 29%、Ca0 6%、Mg0 10 %の化
学組成を有するガラス粉末に、溶媒としてトルエン50
%、エチルアルコール43%、プロピルアルコール7%混
合溶媒を原料重量に対して80%加え、さらに結合剤とし
てポリビニルブチラール樹脂、可塑剤としてDBP、分
散剤としてオレイン酸メチルを原料重量に対してそれぞ
れ10%、4%、0.5 %加えた。この原料を湿式ボールミ
ルにてガラス粉末原料の平均粒径が2μm 程度になるま
で混合・粉砕した。この原液を脱泡、粘度調製を行い、
粘度10000cp の原料スラリーを得た。EXAMPLES The present invention will be described in more detail with reference to examples. In the following examples,% means% by weight. Example 1 Si0 2 55%, Al 2 0 3 29%, Ca0 6%, the glass powder having a chemical composition of Mg0 10%, toluene 50 as a solvent
%, Ethyl alcohol 43%, propyl alcohol 7% mixed solvent was added to the raw material weight 80%, and polyvinyl butyral resin as a binder, DBP as a plasticizer, and methyl oleate as a dispersant were added to the raw material weight at 10% each. %, 4% and 0.5% were added. This raw material was mixed and pulverized in a wet ball mill until the average particle diameter of the glass powder raw material became about 2 μm. This stock solution is defoamed, the viscosity is adjusted,
A raw material slurry having a viscosity of 10,000 cp was obtained.
【0033】このスラリーをドクターブレード法にてシ
ート成形して、厚さ約0.8mm のグリーンシートを得た。
このグリーンシート密度は1.85g/cm2 であった。次いで
このグリーンシートを焼成温度950 〜1250℃に設定した
5段の所定温度にて30分間焼成し各焼成温度に対する5
点のセラミックス基板を得た。この各調製セラミックス
基板について誘電率、誘電損失、表面粗さ、抗折強度、
及び耐熱クリープ性を測定した。この結果を表1に示
す。This slurry was formed into a sheet by the doctor blade method to obtain a green sheet having a thickness of about 0.8 mm.
The green sheet density was 1.85 g / cm 2 . Then, this green sheet is fired for 30 minutes at a predetermined temperature of 5 stages set to a firing temperature of 950 to 1250 ° C., and 5 times for each firing temperature.
A ceramic substrate of dots was obtained. For each of the prepared ceramic substrates, dielectric constant, dielectric loss, surface roughness, bending strength,
And the heat creep resistance was measured. The results are shown in Table 1.
【0034】[0034]
【表1】 [Table 1]
【0035】ここで誘電率及び誘電損失はYHP社製イ
ンピーダンスアナライザー(4194A) を用いて周波数1
MHZ で測定した。表面粗さは小坂研究所製表面粗さ計
(ET−30K )を用いて測定した。抗折強度はJIS −R 16
01の方法に依った。耐熱クリープ性は試料を間隔100mm
の2支点で支持し、 900℃で30分間保持した後の最大た
わみ量を測り、この量が500 未満のものを良好(○)、
それ以上のものを不良(×)とした。Here, the dielectric constant and the dielectric loss were measured at a frequency of 1 using an impedance analyzer (4194A) manufactured by YHP.
It was measured by MH Z. The surface roughness was measured using a surface roughness meter (ET-30K) manufactured by Kosaka Laboratory. Flexural strength is JIS-R 16
It depends on the method of 01. Heat creep resistance is 100 mm between samples
The maximum amount of deflection is measured after holding at 900 ° C for 30 minutes, and those with less than 500 are good (○),
Anything more than that was regarded as defective (x).
【0036】また、試料番号1、2、4、5、すなわ
ち、焼成温度 950℃、1000℃、1200℃、1250℃の各試料
についてX線回折分析を行った。その結果を図1に示
す。ここで、各結晶の同定はX線回折分析によりJCP
DSのデータファイルに基づいて行った。Further, the X-ray diffraction analysis was carried out for each of the samples Nos. 1, 2, 4, and 5, that is, the samples at the firing temperatures of 950 ° C., 1000 ° C., 1200 ° C., and 1250 ° C. The result is shown in FIG. Here, the identification of each crystal is performed by X-ray diffraction analysis in JCP.
It was performed based on the data file of DS.
【0037】比較例1 実施例1と同様の方法にて同一寸法のコージェライト系
結晶化ガラス基板及びガラスセラミックスの代表例であ
る硼珪酸−アルミナ系ガラスセラミックス基板を調製
し、上記各特性値を測定した。なお、焼成条件はそれぞ
れ、焼成温度1420℃焼成時間30分間、及び焼成温度 900
℃焼成時間30分間であった。この結果を表2に示す。Comparative Example 1 A cordierite-based crystallized glass substrate having the same dimensions and a borosilicate-alumina-based glass ceramic substrate, which is a representative example of glass ceramics, were prepared in the same manner as in Example 1, and the above respective characteristic values were set. It was measured. The firing conditions are as follows: firing temperature 1420 ° C, firing time 30 minutes, and firing temperature 900
The calcination time was 30 minutes. The results are shown in Table 2.
【0038】[0038]
【表2】 [Table 2]
【0039】以上の結果から明らかなように本発明のセ
ラミックス基板(試料番号2〜4)は誘電率が6.2 、誘
電損失が0.001 、表面粗さが0.2 以下、抗折強度が1500
kg/cm2以上、耐熱クリープ性が良好という所期の優れた
特性を有することが判明した。これに対して焼成温度が
低い基板(試料番号1)は抗折強度が低く、耐熱クリー
プ性も不良であり、一方、焼成温度が高い基板(試料番
号5)は抗折強度が低いものであった。As is clear from the above results, the ceramic substrate of the present invention (Sample Nos. 2 to 4) has a dielectric constant of 6.2, a dielectric loss of 0.001, a surface roughness of 0.2 or less, and a bending strength of 1500.
It was found to have the expected excellent characteristics of good heat creep resistance at kg / cm 2 or more. On the other hand, the substrate with a low baking temperature (Sample No. 1) has a low bending strength and poor thermal creep resistance, while the substrate with a high baking temperature (Sample No. 5) has a low bending strength. It was
【0040】本発明の基板の特性はコージェライト系結
晶化ガラス基板、及び硼珪酸−アルミナ系ガラスセラミ
ックス基板と比較してもバランスのとれた優れた基板特
性であるといえる。しかも、本発明の基板は生産上有効
な焼成温度範囲が1000〜1200℃と 200℃以上の可焼成温
度域を有するが、コージェライト系結晶化ガラス基板の
同値が20℃と極めて小さいことを考慮すると、生産性、
及び品質の均一性の点でも一段と優れていることが分か
る。It can be said that the characteristics of the substrate of the present invention are excellent and well-balanced substrate characteristics compared with the cordierite type crystallized glass substrate and the borosilicate-alumina type glass ceramics substrate. Moreover, the substrate of the present invention has a firing temperature range effective in production of 1000 to 1200 ° C. and a firing temperature range of 200 ° C. or more, but considering that the equivalent value of the cordierite-based crystallized glass substrate is extremely small at 20 ° C. Then productivity,
It is also seen that the quality is even better.
【0041】また、X線回折分析の結果を示す図1から
明らかなように、本実施例の条件では焼成温度が 950℃
では非晶質のガラス状態のままであるが、焼成温度1000
℃の基板では結晶が出現しているので 950〜1000℃の温
度領域にて結晶化が始まっていることが推定でき、焼成
温度1000℃の基板と焼成温度1200℃の基板のスペクトル
の比較から、その主結晶がアノーサイトとコージェライ
トα及びβとの混成体となり、1000〜1200℃の焼成温度
領域にて上記各結晶の結晶化が進行すると共にインディ
オライトの結晶化も進むことが分かり、また、焼成温度
1200℃の基板と焼成温度1250℃の基板のスペクトルの比
較から、焼成温度が1250℃を超えるとアノーサイトが減
少し、またコージェライトβが殆ど無くなり、一方コー
ジェライトαが顕著に増加しまたインディオライトも増
加して主結晶に登場してくることが分かる。そしてこの
結果と表1 の試料番号4 と5の抗折強度の値の比較か
ら、インディオライトの出現に伴って抗折強度が一段と
低下することが分かる。As is clear from FIG. 1 showing the result of X-ray diffraction analysis, the firing temperature was 950 ° C. under the conditions of this example.
However, it remains in the amorphous glass state, but the firing temperature is 1000.
It can be estimated that crystallization has started in the temperature range of 950 to 1000 ℃ because crystals have appeared on the ℃ substrate. From the comparison of the spectra of the calcination temperature of 1000 ℃ and the calcination temperature of 1200 ℃, It is understood that the main crystal becomes a hybrid of anorthite and cordierite α and β, and that crystallization of indiolite also progresses with crystallization of each of the above crystals in the firing temperature range of 1000 to 1200 ° C., , Firing temperature
From the comparison of the spectra of the substrate at 1200 ℃ and the substrate at 1250 ℃, anorthite decreased when the baking temperature exceeded 1250 ℃, and cordierite β almost disappeared, while cordierite α increased remarkably. It can be seen that the number of lights also increases and appears in the main crystal. From the comparison between this result and the values of the bending strengths of sample Nos. 4 and 5 in Table 1, it can be seen that the bending strength further decreases with the advent of indiolite.
【0042】実施例2 Si02 55%、 Al203 29%、Ca0 6%、Mg0 10 %の化
学組成を有するガラス粉末に溶媒としてトルエン50%、
エチルアルコール43%、プロピルアルコール 7%混合溶
媒を原料重量に対して80%加え、さらに結合剤としてポ
リビニルブチラール樹脂、可塑剤としてDBP、分散剤
としてオレイン酸メチルを原料重量に対してそれぞれ10
%、及び4%、0.5 %加えた。Example 2 Glass powder having the chemical composition of SiO 2 55%, Al 2 O 3 29%, Ca 0 6%, and Mg 0 10% was added to a solvent of toluene 50% as a solvent.
80% of a mixed solvent of ethyl alcohol 43% and propyl alcohol 7% was added to the raw material weight, and polyvinyl butyral resin as a binder, DBP as a plasticizer, and methyl oleate as a dispersant were added to the raw material weight at 10% each.
%, And 4% and 0.5% were added.
【0043】この原料を湿式ボールミルにてガラス粉末
原料の平均粒径が2μm 程度になるまで混合・粉砕し
た。この原液を脱泡、粘度調製を行い、粘度10000cp の
原料スラリーを得た。このスラリーをドクターブレード
法にてシート成形して、厚さ約0.8mm のグリーンシート
を得た。このグリーンシート密度は1.85g/cm2 であっ
た。次いでこのグリーンシートを焼成温度 900℃にて20
時間焼成した。得られたセラミックス基板について誘電
率、誘電損失、表面粗さ、抗折強度、及び耐熱クリープ
性を測定した。各特性値の測定法は実施例1と同様であ
る。この結果を表3に示す。This raw material was mixed and pulverized by a wet ball mill until the average particle diameter of the glass powder raw material became about 2 μm. This stock solution was defoamed and the viscosity was adjusted to obtain a raw material slurry having a viscosity of 10,000 cp. This slurry was formed into a sheet by the doctor blade method to obtain a green sheet having a thickness of about 0.8 mm. The green sheet density was 1.85 g / cm 2 . Then, this green sheet is baked at 900 ℃ for 20
Burned for hours. The dielectric constant, the dielectric loss, the surface roughness, the bending strength, and the thermal creep resistance of the obtained ceramic substrate were measured. The method of measuring each characteristic value is the same as in Example 1. The results are shown in Table 3.
【0044】[0044]
【表3】 [Table 3]
【0045】この結果から明らかなように本セラミック
ス基板は 900℃という従来の常識からすれば破格の低温
での焼成でも本発明の目的とする特性がえられる。この
ような低温焼結基板の出現は銀や銅等の低融点導体と同
時焼成ができ、それらのもつ低い導体抵抗のため、より
多層化された基板が実現できること、コンデンサーや抵
抗を内部に形成することが可能となり回路の大幅な小型
化、高信頼性化が実現できるようになることといった大
きな利点を持つことを意味し、新規な用途分野の開拓が
可能となる。As is clear from these results, the ceramic substrate of the present invention can obtain the characteristics intended by the present invention even if it is fired at an extremely low temperature of 900 ° C. according to the conventional common sense. With the advent of such low-temperature sintered substrates, low-melting conductors such as silver and copper can be co-fired, and because of their low conductor resistance, more multilayered substrates can be realized, and capacitors and resistors are formed inside. This means that it has a great advantage in that the circuit can be made significantly smaller and the reliability can be improved, and it is possible to develop new fields of application.
【0046】実施例3 Si02 55%、 Al203 29%、Ca0 6%、Mg0 10 %の化
学組成を有するガラス粉末に硼珪酸ガラス粉末を全ガラ
ス粉末原料に対して12%、20%、30%を占めるようにそ
れぞれ添加した3種のガラス粉末原料を調製し、これら
各粉末原料に対して溶媒としてトルエン50%、エチルア
ルコール43%、プロピルアルコール 7%混合溶媒を原料
重量に対して80%加え、さらに結合剤としてポリビニル
ブチラール樹脂、可塑剤としてDBP、分散剤としてオ
レイン酸メチルをを原料重量に対してそれぞれ15%、5
%、0.5%加えた。Example 3 Borosilicate glass powder was added to glass powder having the chemical composition of SiO 2 55%, Al 2 O 3 29%, Ca 0 6%, and Mg 0 10% in an amount of 12% and 20% based on all glass powder raw materials. , 3 kinds of glass powder raw materials were added respectively so as to occupy 30%, and toluene 50%, ethyl alcohol 43%, propyl alcohol 7% mixed solvent as a solvent for each of these powder raw materials was added to the raw material weight. 80% addition, polyvinyl butyral resin as a binder, DBP as a plasticizer, and methyl oleate as a dispersant, 15% and 5%, respectively, of the raw material weight.
%, 0.5% were added.
【0047】この原料を湿式ボールミルにてガラス粉末
原料の平均粒径が2μm 程度になるまで混合・粉砕し
た。この原液を脱泡、粘度調製を行い、粘度15000cp の
原料スラリーを得た。このスラリーをドクターブレード
法にてシート成形して、厚さ約0.8mm のグリーンシート
を得た。このグリーンシート密度は1.83g/cm2 であっ
た。次いでこのグリーンシートを焼成温度1000℃にて30
分間焼成した。得られた各調製セラミックス基板につい
て誘電率、誘電損失、表面粗さ、抗折強度及び耐熱クリ
ープ性を測定した。各特性値の測定法は実施例1と同様
である。この結果を表4に示す。This raw material was mixed and pulverized by a wet ball mill until the average particle diameter of the glass powder raw material became about 2 μm. This stock solution was defoamed and the viscosity was adjusted to obtain a raw material slurry having a viscosity of 15000 cp. This slurry was formed into a sheet by the doctor blade method to obtain a green sheet having a thickness of about 0.8 mm. The green sheet density was 1.83 g / cm 2 . Then, this green sheet is baked at a firing temperature of 1000 ° C for 30
Bake for minutes. The dielectric constant, the dielectric loss, the surface roughness, the bending strength and the thermal creep resistance of each of the obtained prepared ceramic substrates were measured. The method of measuring each characteristic value is the same as in Example 1. The results are shown in Table 4.
【0048】[0048]
【表4】 [Table 4]
【0049】以上の結果から明らかなように本潜在結晶
ガラス粉末に20重量%以下の硼珪酸ガラス粉末を配合し
た粉末原料を本発明の焼成条件にて焼成することにより
実施例1の本潜在結晶ガラス粉末単独のガラス原料より
焼成して得たセラミックス基板に比較して表面粗さ及び
誘電率が他の基板特性を維持したままさらに低下させる
ことができる。As is apparent from the above results, the present latent crystal of Example 1 was obtained by firing the powder raw material in which 20 wt% or less of the borosilicate glass powder was mixed with the present latent crystal glass powder under the firing conditions of the present invention. It is possible to further reduce the surface roughness and the dielectric constant while maintaining the other substrate characteristics, as compared with the ceramic substrate obtained by firing the glass raw material of the glass powder alone.
【0050】[0050]
【発明の効果】以上説明したように本発明のセラミック
ス基板及びセラミックス回路配線板は誘電率及び誘電損
失がともに小さく、抗折強度等の機械的強度が十分大き
く、しかもその表面が微細回路形成に適合する高い平滑
性を有している。しかも従来のアルミナ基板等のセラミ
ックス基板に比較して一段と低温で焼結でき、可焼成温
度域が広いので生産性が高く高品質で経済性が優れてい
る。したがって本発明のセラミックス基板及びセラミッ
クス回路配線板は安価で高信頼性の高周波用及び高周波
用の基板あるいは回路配線板として好適に利用すること
ができる。As described above, the ceramic substrate and the ceramic circuit wiring board of the present invention have small permittivity and dielectric loss, sufficiently high mechanical strength such as bending strength, and their surface is suitable for forming fine circuits. It has a high level of smoothness. Moreover, it can be sintered at a much lower temperature than conventional ceramics substrates such as alumina substrates, and has a wide calcination temperature range, which results in high productivity, high quality, and excellent economical efficiency. Therefore, the ceramic substrate and the ceramic circuit wiring board of the present invention can be suitably used as an inexpensive and highly reliable high frequency and high frequency substrate or circuit wiring board.
【0051】本発明のセラミックス基板の用途としては
主用途である通常の回路配線板以外に、トランジスタ
ー、IC、LSI等の電子部品用基板;磁気ディスク用
基板、光磁気ディスク用基板等のメモリーディスク用基
板;カラー液晶パネル板等多様な用途にも好適に利用す
ることができる。In addition to the usual circuit wiring boards, which are the main applications of the ceramic substrate of the present invention, substrates for electronic parts such as transistors, ICs, LSIs; memory disks such as magnetic disk substrates and magneto-optical disk substrates Substrate for use in various applications such as a color liquid crystal panel plate.
【0052】また本発明のグリーンシートは、表面平滑
性が優れ、広可焼成温度域の低温焼結が可能で、本発明
の製造法により容易に本発明のセラミックス基板及びセ
ラミックス回路配線板とすることができるので、そのま
ま、あるいは外形・孔あけ加工を行って焼成することに
より、各種用途のセラミックス基板として使用すること
ができ、また未加工のままで外形・孔あけ加工、回路印
刷、スルーホール導体化加工、多層積層成形等の回路配
線加工を施し焼成することにより高性能の多層印刷回路
配線板として好適に利用することができる。The green sheet of the present invention has excellent surface smoothness and can be sintered at a low temperature in a wide calcination temperature range, and can be easily made into the ceramic substrate and the ceramic circuit wiring board of the present invention by the manufacturing method of the present invention. Therefore, it can be used as a ceramic substrate for various purposes by firing it as it is, or after performing external shape / hole forming processing, and baking it. It can be suitably used as a high-performance multilayer printed circuit wiring board by subjecting it to circuit wiring processing such as conductor processing and multilayer lamination molding and firing.
【図1】実施例1にて調製した各焼成温度のセラミック
ス基板の結晶相を説明するためのX線回折図である。FIG. 1 is an X-ray diffraction diagram for explaining a crystal phase of a ceramic substrate prepared in Example 1 at various firing temperatures.
1 アノーサイトの回折ピーク 2α コージェライトαの回折ピーク 2β コージェライトβの回折ピーク 3 インディオライトの回折ピーク 1 Diffraction peak of anorthite 2α Diffraction peak of cordierite α 2β Diffraction peak of cordierite β 3 Diffraction peak of indiolite
Claims (6)
3 20〜30重量%、Ca0 5〜15重量%、Mg0 5〜15重量%
の化学組成を有する結晶化ガラスを主成分とする結晶化
ガラス成形体よりなり、該結晶化ガラスの主結晶がアノ
ーサイト、コージェライトα及びコージェライトβから
なることを特徴とするセラミックス基板。1. Si 0 2 45 to 65 wt% in terms of oxide, Al 2 0
3 20-30% by weight, Ca05-5% by weight, Mg05-5-15% by weight
2. A ceramic substrate comprising a crystallized glass molded body containing a crystallized glass having the chemical composition as a main component, wherein the main crystals of the crystallized glass are anorthite, cordierite α and cordierite β.
なる請求項1記載のセラミックス基板。2. The ceramic substrate according to claim 1, which contains 20% by weight or less of borosilicate glass.
する結晶化ガラス成形体に一体的に回路配線が施されて
なるセラミックス回路配線板。3. A ceramic circuit wiring board in which circuit wiring is integrally provided on the crystallized glass molded body containing crystallized glass as a main component according to claim 1.
3 20〜30重量%、Ca0 5〜15重量%、Mg0 5〜15重量%
の化学組成を有するガラス粉末を主成分とするガラス粉
末原料に可塑・凝結性組成物が配合されてなるグリーン
シート。4. O 2 45 to 65 wt% in terms of oxide, Al 2 O
3 20-30% by weight, Ca05-5% by weight, Mg05-5-15% by weight
A green sheet comprising a glass powder raw material containing a glass powder having the above chemical composition as a main component, and a plasticizing / setting composition.
度 900〜1000℃で 0.7〜20時間、又は焼成温度1000〜12
00℃で10〜40分間焼成することを特徴とする結晶化ガラ
スからなるセラミックス基板の製造法。5. The green sheet according to claim 4, at a firing temperature of 900 to 1000 ° C. for 0.7 to 20 hours, or at a firing temperature of 1000 to 12
A method for producing a ceramic substrate made of crystallized glass, which comprises firing at 40 ° C for 10 to 40 minutes.
線加工を施したグリーンシート回路配線加工体を焼成温
度 900〜1000℃で 0.7〜20時間、又は焼成温度1000〜12
00℃で10〜40分間焼成することを特徴とする結晶化ガラ
スからなるセラミックス回路配線板法の製造法。6. A green sheet circuit wiring processed body obtained by applying circuit wiring processing to the green sheet according to claim 4, at a baking temperature of 900 to 1000 ° C. for 0.7 to 20 hours, or a baking temperature of 1000 to 12
A method for manufacturing a ceramic circuit wiring board method comprising crystallized glass, which comprises firing at 40 ° C for 10 to 40 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4089748A JPH05254863A (en) | 1992-03-13 | 1992-03-13 | Ceramic substrate, ceramic printed circuit board and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4089748A JPH05254863A (en) | 1992-03-13 | 1992-03-13 | Ceramic substrate, ceramic printed circuit board and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05254863A true JPH05254863A (en) | 1993-10-05 |
Family
ID=13979378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4089748A Pending JPH05254863A (en) | 1992-03-13 | 1992-03-13 | Ceramic substrate, ceramic printed circuit board and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05254863A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007176741A (en) * | 2005-12-28 | 2007-07-12 | Kyocera Corp | Ceramic sintered body and wiring board |
| JP2009180518A (en) * | 2008-01-29 | 2009-08-13 | Kyocera Corp | Probe card wiring board and probe card |
| JP2009236576A (en) * | 2008-03-26 | 2009-10-15 | Kyocera Corp | Wiring board for probe card and probe card using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4929314A (en) * | 1972-07-19 | 1974-03-15 | ||
| JPS63182887A (en) * | 1987-01-26 | 1988-07-28 | 松下電工株式会社 | Manufacture of ceramic wiring circuit board |
-
1992
- 1992-03-13 JP JP4089748A patent/JPH05254863A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4929314A (en) * | 1972-07-19 | 1974-03-15 | ||
| JPS63182887A (en) * | 1987-01-26 | 1988-07-28 | 松下電工株式会社 | Manufacture of ceramic wiring circuit board |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007176741A (en) * | 2005-12-28 | 2007-07-12 | Kyocera Corp | Ceramic sintered body and wiring board |
| JP2009180518A (en) * | 2008-01-29 | 2009-08-13 | Kyocera Corp | Probe card wiring board and probe card |
| JP2009236576A (en) * | 2008-03-26 | 2009-10-15 | Kyocera Corp | Wiring board for probe card and probe card using the same |
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