JPH05257167A - Method of manufacturing TFT-LCD - Google Patents

Abstract

(57) [Summary] [Purpose] In a TFT-LCD, the manufacturing process of the TFT-LCD has been shortened, and the TFT-LC of low cost and high reliability
To provide D. [Structure] The electrode material formed by the sputtering device is deposited on the glass substrate on which the resist for the inversion mask is formed,
After that, patterning is performed by the lift-off method. [Effect] In the above manufacturing method, since the electrode material formed by the sputtering apparatus is patterned by the lift-off method, the metal etching step is eliminated, and since the photoresist is not exposed to the metal etching solution, the photoresist can be easily peeled off. Become. As described above, the number of manufacturing steps of the TFT can be shortened, so that the TFT-LCD of low cost and high reliability is obtained.
Can be provided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to shortening the manufacturing process of a TFT-LCD.

[0002]

2. Description of the Related Art Conventionally, a TFT-LCD (Thin Film Tran
As for the manufacturing method of the sistor-Liquid Crystal Display), the same method as the manufacturing method of the LSI is used as described in "Flat Panel Display '91", edited by Nikkei Electronics, Nikkei Microdevices. FIG. 5 shows a conventional TFT manufacturing process.

[0003]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
It had the following problems.

That is, in the above manufacturing method, the number of times of etching the metal is three and the number of times of etching the semiconductor film and the insulating film is five, which lengthens the manufacturing process. Also, the removal of the photoresist after etching is relatively difficult, and the throughput is low.

An object of the present invention is to solve the above-mentioned problems and provide a low cost and highly reliable TFT-LCD.

[0006]

In order to solve the above problems, according to the present invention, an electrode material formed by a sputtering apparatus is deposited on a glass substrate on which a resist for a reversal mask is formed, and then a lift-off method is used. A method for manufacturing a TFT-LCD including a step of patterning is proposed.

[0007]

In the manufacturing method described above, since the metal etching step is eliminated, the TFT manufacturing step is shortened accordingly.
Further, since the electrodes are patterned by the lift-off method, the photoresist is not exposed to the metal etching solution. Therefore, the peeling of the photoresist becomes easy. Therefore, a low cost and highly reliable TFT-LCD can be provided.

[0008]

The present invention will be described in detail below with reference to the drawings.

FIG. 1 shows an embodiment of a method of manufacturing a gate electrode according to the present invention. As a manufacturing method, as shown in the figure,
(A) Patterning a resist on a glass substrate using an inversion mask of a gate electrode, (b) Next, sputter | spatter Al which becomes a gate electrode, (c) Next, a resist peeling is performed and a gate electrode is formed. . Here, the sputtering method is a CVD method (Chemical Vapor Deposition Metho
Unlike d), it is suitable for the lift-off method because of the high directivity of film deposition. In the manufacturing method described above, since the gate electrode etching step is eliminated, the TFT manufacturing step is correspondingly shortened. Further, since the gate electrode is patterned by the lift-off method, the photoresist is not exposed to the etching solution for the gate electrode. Therefore, the peeling of the photoresist becomes easy.

FIG. 2 shows an embodiment of a method for manufacturing a pixel electrode according to the present invention. As a manufacturing method, as shown in the figure,
(A) Patterning a resist on the a-Si or SiN film using an inversion mask of the pixel electrode, (b) Next, sputtering ITO which will be the pixel electrode, (c)
Next, the resist is peeled off to form a pixel electrode. In the above-described manufacturing method, the pixel electrode etching step is eliminated, and the TFT manufacturing step is correspondingly shortened. Further, since the pixel electrode is patterned by the lift-off method, the photoresist is not exposed to the etching liquid for the pixel electrode. Therefore, the peeling of the photoresist becomes easy.

FIG. 3 shows an embodiment of a method of manufacturing a drain / source electrode according to the present invention. As a manufacturing method, as shown in the figure, (a) a resist is patterned on the a-Si, ITO or SiN film using an inversion mask of the drain / source electrode, (b) a drain / source electrode is then formed. Then, Cr is sputtered, and (c) the resist is stripped to form drain / source electrodes. In the manufacturing method described above, since the drain / source electrode etching step is eliminated, the TFT manufacturing step is correspondingly shortened. Further, since the drain / source electrode is patterned by the lift-off method, the photoresist is not exposed to the drain / source electrode etching solution. Therefore, the peeling of the photoresist becomes easy.

Further, when the present invention is used, taper etching of electrodes cannot be performed. Therefore, in order to prevent disconnection, the ITO serving as the pixel electrode must be located below the drain / source electrodes as shown in the figure.

FIG. 4 shows a partial structure of a TFT-LCD manufacturing line according to the present invention. In the present invention, the electrode material formed by the sputtering apparatus is patterned by the lift-off method.・ Development device or resist printing device is installed. In particular, the use of a resist printing apparatus that does not use a photolithography process significantly improves the throughput of TFT manufacturing.

[0014]

As is apparent from the above description, according to the present invention, since the electrode material formed by the sputtering apparatus is patterned by the lift-off method, the metal etching step is eliminated, and the photoresist is metal etched. Since it is not exposed to the liquid, the photoresist can be peeled off easily. As described above, since the number of manufacturing steps of the TFT is shortened, it is possible to provide a low cost and highly reliable TFT-LCD.

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of a method of manufacturing a gate electrode according to the present invention.

FIG. 2 is a diagram showing an embodiment of a method of manufacturing a pixel electrode according to the present invention.

FIG. 3 is a diagram showing an example of a method of manufacturing a drain / source electrode according to the present invention.

FIG. 4 is a schematic diagram of a part of a TFT-LCD manufacturing line according to the present invention.

FIG. 5 is a manufacturing process diagram of a conventional TFT.

[Explanation of symbols]

Al ... Aluminum, SiN ... Silicon nitride film, aS
i ... Amorphous silicon, ITO ... Indium tin oxide (transparent conductive film), Cr ... Chrome.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 21/336 29/784

Claims (5)

[Claims] 1. A TFT-LCD (Thin Film Transistor).
In the manufacturing method of Liquid Crystal Display), the electrode material formed by the sputtering device is deposited on the glass substrate on which the resist of the inversion mask is formed, and then patterned by the lift-off method.
CD manufacturing method. 2. An apparatus for manufacturing a TFT-LCD, characterized in that, in a TFT-LCD manufacturing line, an apparatus for exposing and developing a resist is inserted in front of a sputtering apparatus. 3. A device structure of a TFT formed by using the manufacturing method according to claim 1, wherein the pixel electrode is drain /
A device structure of a TFT, which is located below the source electrode. 4. A method of manufacturing a TFT-LCD, wherein the resist of the reversal mask according to claim 1 is formed by a printing method. 5. A facility for manufacturing a TFT-LCD, wherein a device for performing resist printing is inserted in a stage before a sputtering device in a TFT-LCD manufacturing line.