JPH052738B2 - - Google Patents
Info
- Publication number
- JPH052738B2 JPH052738B2 JP62117562A JP11756287A JPH052738B2 JP H052738 B2 JPH052738 B2 JP H052738B2 JP 62117562 A JP62117562 A JP 62117562A JP 11756287 A JP11756287 A JP 11756287A JP H052738 B2 JPH052738 B2 JP H052738B2
- Authority
- JP
- Japan
- Prior art keywords
- pallet
- processing
- chamber
- sputtering
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、処理材表面に薄膜を作成するスパツ
タリング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a sputtering apparatus for forming a thin film on the surface of a treated material.
(従来技術とその問題点)
従来、スパツタリング装置には、処理材とター
ゲツト材とを相対的に移動させてスパツタ処理を
行なう方式と、処理材とターゲツト材とを静止状
態で対向させてスパツタ処理を行なう方式とがあ
る。(Prior art and its problems) Conventionally, sputtering apparatuses have two methods: one method performs sputtering by relatively moving the treated material and the target material, and the other method performs sputtering by keeping the treated material and target material facing each other in a stationary state. There is a method to do this.
そして、両方式はスパツタ処理条件等によつて
いずれか一方の方式を採用している。 One of the two methods is adopted depending on the sputter processing conditions and the like.
したがつて、両方式を使用するには、2種のス
パツタリング装置を必要とし、設備費が高価にな
るという問題点を有する。 Therefore, if both types are used, two types of sputtering devices are required, which poses a problem in that equipment costs are high.
本発明は、簡単な構成で、1台で2方式のスパ
ツタ処理を行なえるスパツタリング装置を提供す
ることを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a sputtering device that has a simple configuration and can perform two types of sputtering processing with one device.
(問題点を解決すべき手段)
本発明は前記目的を達成するために、スパツタ
リング装置を、垂直状態のパレツトに複数の処理
材を保持し、該処理材に薄膜を形成するスパツタ
リング装置において、前記パレツトに複数の処理
材を同心円上に保持するとともに、処理室の両側
壁部対向位置に、それぞれ進退するパレツト支持
用スピンドルを設け、このスピンドルの一方に、
ステツピングモータを連結し、かつ、処理室の少
なくとも一方の側壁部に複数のターゲツト材を着
脱自在で、放射状に配設する一方、処理室の所定
位置にパレツト回転停止位置確認手段を設けたも
のである。(Means to Solve the Problems) In order to achieve the above object, the present invention provides a sputtering apparatus that holds a plurality of processing materials on a vertical pallet and forms a thin film on the processing materials. A plurality of processing materials are held concentrically on a pallet, and spindles for supporting the pallets that move forward and backward are provided at opposing positions on both side walls of the processing chamber, and on one of these spindles,
Stepping motors are connected to each other, a plurality of target materials are detachably arranged radially on at least one side wall of the processing chamber, and means for confirming the pallet rotation stop position is provided at a predetermined position in the processing chamber. It is.
(実施例)
つぎに、本発明を一実施例を示す図面にしたが
つて説明する。(Example) Next, the present invention will be described with reference to drawings showing one example.
本発明にかかるスパツタリング装置は、第1図
に示すように、装入室1、第1〜第3処理室2
a,2b,2cおよび抽出室3とからなり、装入
室1と第1処理室2a、第1処理室2aと第2処
理室2b、第2処理室2bと第3処理室2cおよ
び第3処理室2cと抽出室3との間にはそれぞれ
スリツトバルブ4が設けてある。 As shown in FIG. 1, the sputtering apparatus according to the present invention includes a charging chamber 1, first to third processing chambers 2,
a, 2b, 2c, and an extraction chamber 3, including a charging chamber 1 and a first processing chamber 2a, a first processing chamber 2a and a second processing chamber 2b, a second processing chamber 2b, a third processing chamber 2c, and a third processing chamber 2b. A slit valve 4 is provided between the processing chamber 2c and the extraction chamber 3, respectively.
そして、前記装入室1には、第2図に示すよう
に、複数対の独立したアーム6を備えたマガジン
5が炉幅方向で移動自在に設けてあり、このマガ
ジン5の各アーム6の先端部には、凹溝からなる
軸支部7が設けられ、この軸支部7で複数の円板
状処理材Wを同心円上に設けた環状凹溝8に回転
自在に遊嵌保持した円板状パレツト9の軸部10
を支持するようになつている。 As shown in FIG. 2, the charging chamber 1 is provided with a magazine 5 that is movable in the width direction of the furnace and has a plurality of pairs of independent arms 6. A shaft support 7 consisting of a concave groove is provided at the tip, and the shaft support 7 holds a plurality of disk-shaped processed materials W rotatably and loosely fitted in an annular groove 8 provided on a concentric circle. Shaft 10 of pallet 9
is becoming increasingly popular.
また、装入室1の前記処理室2と同一線上をな
す位置にシリンダ装置11が設けてあり、このシ
リンダ装置11の動作で、所定アーム6を軸6a
を中心に上・下方向に旋回させて、当該パレツト
9を後述するパレツト移送装置14に引き渡すよ
うになつている。 Further, a cylinder device 11 is provided in the charging chamber 1 at a position on the same line as the processing chamber 2, and the operation of this cylinder device 11 moves a predetermined arm 6 to the shaft 6a.
The pallet 9 is rotated upward and downward around the pallet 9 and delivered to a pallet transfer device 14, which will be described later.
前記抽出室3は、装入室1とほぼ同様な構成か
らなり、アーム6の旋回によつて抽出室3に位置
するパレツト移送装置14上のパレツト9をマガ
ジン5内に引き取り、パレツト9を抽出室3から
抽出するようになつている。 The extraction chamber 3 has almost the same configuration as the charging chamber 1, and the pallet 9 on the pallet transfer device 14 located in the extraction chamber 3 is taken up into the magazine 5 by the rotation of the arm 6, and the pallet 9 is extracted. It is designed to extract from chamber 3.
前記装入室1、各処理室2a,2b,2cおよ
び抽出室3の下部には、上・下一対のガイドロー
ラ12a,12bを有するガイド部材13が所定
間隔で設けられている。 Guide members 13 having a pair of upper and lower guide rollers 12a, 12b are provided at predetermined intervals in the lower part of the charging chamber 1, each of the processing chambers 2a, 2b, 2c, and the extraction chamber 3.
また、各処理室2a,2b,2cと抽出室3に
は、隣接する空間を移動するパレツト移送装置1
4が設けてある。このパレツト移送装置14は、
第4図から明らかなように、図示しないピニオン
と噛合するラツク15aを有し、かつ、中央部に
貫通孔17を設けたキヤリア本体15と、このキ
ヤリア本体15上に設けた昇降するパレツト支持
台19とからなる。このパレツト支持体19は上
端に凹溝からなる軸支部21を有するとともに、
下端に前記キヤリア本体15の貫通孔18内に位
置するガイドピン19a,19bを備えている。 In addition, each of the processing chambers 2a, 2b, 2c and the extraction chamber 3 is equipped with a pallet transfer device 1 that moves in the adjacent space.
4 is provided. This pallet transfer device 14 is
As is clear from FIG. 4, there is a carrier body 15 having a rack 15a that meshes with a pinion (not shown) and a through hole 17 in the center, and a pallet support base provided on the carrier body 15 that moves up and down. It consists of 19. This pallet support body 19 has a shaft support 21 consisting of a concave groove at the upper end, and
Guide pins 19a and 19b located in the through hole 18 of the carrier body 15 are provided at the lower end.
さらに、前記処理室2a,2b,2cの底部中
央には、前記キヤリア本体15の中央貫通孔17
内を進退するピストンロツド20aを有する押上
シリンダ20が設けてある。 Further, a central through hole 17 of the carrier body 15 is provided at the center of the bottom of the processing chambers 2a, 2b, 2c.
A push-up cylinder 20 having a piston rod 20a that moves back and forth therein is provided.
一方、前記押上シリンダ20の上方に位置する
側壁Bには、第5図に示すように、パレツト9の
軸部10両端を挾持する押圧スピンドル23a,
23bと、一方の押圧スピンドル23bを回転さ
せるステツピングモータ24とからなるパレツト
回転装置22が設けてある。 On the other hand, on the side wall B located above the push-up cylinder 20, as shown in FIG.
23b and a stepping motor 24 for rotating one press spindle 23b.
前記パレツト回転装置22の押圧スピンドル2
3の周囲には、第1図、第3図、第6図に示すよ
うに、公知のコンベシヨナル方式、トライオード
方式あるいはプレーナーマグネトロン方式の矩形
状スパツタリング電極Cと円形状スパツタリング
電極Dが放射状に配設してある。 Pressing spindle 2 of the pallet rotating device 22
As shown in FIGS. 1, 3, and 6, rectangular sputtering electrodes C and circular sputtering electrodes D of known convectional type, triode type, or planar magnetron type are arranged radially around 3. It has been done.
そして、矩形状スパツタリング電極C(ターゲ
ツト材25)は、第6図に示すように、その中心
O′がパレツト9に装着した処理材Wの中心Oと
半径方向でずれた位置(H=15〜25mm)になるよ
うに配設してあり、一方、円形状スパツタリング
電極Dの中心は処理材Wの中心Oと一致してい
る。 Then, as shown in FIG. 6, the rectangular sputtering electrode C (target material 25) is
The center of the circular sputtering electrode D is arranged so that the center O of the processing material W mounted on the pallet 9 is shifted from the center O of the processing material W in the radial direction (H = 15 to 25 mm). It coincides with the center O of W.
ただし、スパツタリング電極Dは、第9,10
図に示すように、スパツタリング電極Cと同一形
状のアダプタ26を介して取り付けたものであ
る。 However, the sputtering electrodes D are the 9th and 10th
As shown in the figure, it is attached via an adapter 26 having the same shape as the sputtering electrode C.
また、前記パレツト9には貫通孔28が設けら
れ、かつ、各処理室2a〜2cの対向する側壁B
に投・受光器29,30が設けられ(第11,1
2図)、投光器29からの光が貫通孔28を介し
て受光器30で検出されると、スパツタリング電
極Dの中心と処理材Wの中心とが合致状態となる
ようになつている。あるいは、貫通孔28の位置
を、投・受光器29,30で検知したのち、所定
角度パレツト9を回転させて合致状態としてもよ
い。なお、貫通孔28、受光器29,30でパレ
ツト回転停止位置確認手段27を構成する。 Further, the pallet 9 is provided with a through hole 28, and the opposing side wall B of each processing chamber 2a to 2c is provided with a through hole 28.
Emitter/receiver 29, 30 are provided (11th, 1st
2), when the light from the light projector 29 is detected by the light receiver 30 through the through hole 28, the center of the sputtering electrode D and the center of the processing material W are aligned. Alternatively, after detecting the position of the through hole 28 using the projector/receiver 29, 30, the pallet 9 may be rotated by a predetermined angle to bring it into a matching state. The through hole 28 and the light receivers 29 and 30 constitute a pallet rotation stop position confirmation means 27.
つぎに、前記構成からなるスパツタリング装置
の操作を説明する。 Next, the operation of the sputtering apparatus having the above configuration will be explained.
まず、処理材Wを公転させながら処理するに
は、装入室1のマガジン5に、予め複数の処理材
Wを環状凹部8に装着したパレツト9を各アーム
6の軸支部7に載置する(第2a図、第2b図)。
そして、装入室1、各処理室2および抽出室3を
図示しない真空装置で真空にするとともに、所定
のガス、たとえば、アルゴンガスを供給して所定
のスパツタ圧とし、各スリツトバルブ4を開き、
図示しないピニオンを駆動することにより、各パ
レツト移送装置14を左方(装入室1方向)に移
動させ、第1処理室2aのパレツト移送装置14
を装入室1に位置させる。ここで、前記シリンダ
装置11を駆動して、所定アーム6を軸6aを中
心に軸支部7を旋回降下させ、該所定アーム6に
支持されていたパレツト9aを前記パレツト支持
体19の軸支部21上に移載する(第2c図)。 First, in order to process the processing material W while it revolves, a pallet 9 in which a plurality of processing materials W are previously mounted in the annular recess 8 is placed on the shaft support 7 of each arm 6 in the magazine 5 of the loading chamber 1. (Figures 2a and 2b).
Then, the charging chamber 1, each processing chamber 2, and the extraction chamber 3 are evacuated using a vacuum device (not shown), and a predetermined gas, for example, argon gas is supplied to achieve a predetermined sputtering pressure, and each slit valve 4 is opened.
By driving a pinion (not shown), each pallet transfer device 14 is moved to the left (in the direction of the charging chamber 1), and the pallet transfer device 14 in the first processing chamber 2a is
is located in charging chamber 1. Here, by driving the cylinder device 11, the shaft support 7 of the predetermined arm 6 is rotated and lowered about the shaft 6a, and the pallet 9a supported by the predetermined arm 6 is moved to the shaft support 21 of the pallet support body 19. Transfer it to the top (Figure 2c).
ついで、前記所定アーム6は旋回上昇して元の
状態になるとともに各パレツト移送装置14は、
図示しないピニオンの駆動により各々右方(抽出
室3側)の処理室2と抽出室3へ移動して停止し
たのち、各スリツトバルブバルブ4を閉とする。
その後、各押上シリンダ20が作動して、ピスト
ンロツド20aが貫通孔17内に挿入され、第4
b図に示すようにパレツト支持台19を上昇させ
る。このように、パレツト支持台19が上昇する
と、これを検知し、第5図に示すように、押圧ス
ピンドル23が作動してパレツト9の軸部10両
端を挾持して、パレツト回転装置22に支持する
と同時に、押上シリンダ20の作動によつてパレ
ツト支持台19が降下する。この状態で、第10
図に示すように、回転処理用プロセスプログラム
P1によりパレツト9はパレツト回転装置22の
ステツピングモータ24の駆動により所定速度で
回転するとともに、スパツタリング電極Cへの印
加によりスパツタリングが開始される。 Then, the predetermined arm 6 pivots upward and returns to its original state, and each pallet transfer device 14
After moving to the right side (extraction chamber 3 side) of the processing chamber 2 and extraction chamber 3 by driving a pinion (not shown) and stopping, each slit valve valve 4 is closed.
Thereafter, each push-up cylinder 20 is operated and the piston rod 20a is inserted into the through hole 17, and the fourth piston rod 20a is inserted into the through hole 17.
Raise the pallet support stand 19 as shown in Figure b. In this way, when the pallet support stand 19 rises, this is detected, and as shown in FIG. At the same time, the pallet support base 19 is lowered by the operation of the push-up cylinder 20. In this state, the 10th
Process program for rotation processing as shown in the figure
At P1 , the pallet 9 is rotated at a predetermined speed by driving the stepping motor 24 of the pallet rotating device 22, and sputtering is started by application to the sputtering electrode C.
このスパツタリング処理中、パレツト9の各環
状凹溝8に遊嵌状態で保持された処理材Wは、パ
レツト9の回転(自転)により、処理材Wの自転
中心Oの軌跡がターゲツト材25の中心O′とず
れた状態で自転・公転することになる。 During this sputtering process, the processing material W held loosely in each annular groove 8 of the pallet 9 is rotated (rotated) so that the locus of the rotation center O of the processing material W is aligned with the center of the target material 25. It will rotate and revolve in a state shifted from O'.
なお、パレツト支持台19が前述したように、
元の状態になると、装入室1のマガジン5が1ピ
ツチ前進移動し、次パレツト9bが受け渡し位置
に来る。 In addition, as mentioned above, the pallet support stand 19
When the original state is restored, the magazine 5 in the loading chamber 1 moves forward one pitch, and the next pallet 9b comes to the delivery position.
したがつて、スパツタリング処理中におけるパ
レツト9の各処理材Wは、加熱→冷却→加熱を受
けるとともに、スパツタリング電極Cから一定方
向のみの磁界分布を受けず、つまり、処理材Wの
温度上昇が抑えられる一方、処理材Wに対するス
パツタ方向がランダムとなり、処理材Wの表裏は
ほぼ均一に薄膜が形成されることになる。 Therefore, during the sputtering process, each processing material W on the pallet 9 undergoes heating→cooling→heating, and is not subjected to magnetic field distribution only in a certain direction from the sputtering electrode C, that is, the temperature rise of the processing material W is suppressed. On the other hand, the sputtering direction with respect to the treated material W becomes random, and a thin film is formed almost uniformly on the front and back of the treated material W.
このようにして、一定時間スパツタ処理が行な
われると、各スリツトバルブ4を開き、各パレツ
ト移送装置14は、前述したように、左方(装入
室1側)に移動し、装入室1で1枚のパレツト9
bを受け取る一方、処理室2のパレツト支持台1
9が上昇停止すると、押圧スピンドル23が後退
して、第1処理室2aのパレツト9aを支持する
と同時に、パレツト支持台19が下降する(第2
f図)。その後、パレツト移送装置14は、右方
(抽出室3側)に移動し、装入室1のパレツト9
bは第1処理室2aに、第1処理室2aのパレツ
ト9aは第2処理室内2bに装入される(第2g
図、第2h図)。ここで、前記同様パレツト9b
の処理材Wは1回目の、また、パレツト9aの処
理材Wは2回目のスパツタ工程を経て、以下同様
にして各処理材Wは各処理室2でそれぞれスパツ
タ処理されて完成品となる。 In this way, when the sputtering process is carried out for a certain period of time, each slit valve 4 is opened, and each pallet transfer device 14 moves to the left (toward the charging chamber 1 side) as described above, and the pallet is transferred to the charging chamber 1. 1 palette 9
While receiving b, the pallet support stand 1 of the processing chamber 2
When the pallet 9 stops rising, the press spindle 23 retreats and supports the pallet 9a in the first processing chamber 2a, and at the same time the pallet support stand 19 descends (the second
f figure). Thereafter, the pallet transfer device 14 moves to the right (extraction chamber 3 side) and transfers the pallets 9 in the charging chamber 1.
b is charged into the first processing chamber 2a, and the pallet 9a of the first processing chamber 2a is charged into the second processing chamber 2b.
Fig. 2h). Here, as above, palette 9b
The processed material W of 1 is subjected to the first sputtering process, and the processed material W of the pallet 9a is subjected to the second sputtering process, and in the same manner, each processed material W is sputtered in each processing chamber 2 to become a finished product.
このように、抽出室3にパレツト9を支持した
パレツト移送装置14が装入されると、装入室1
での動作とは逆に、下方に待機するアーム6の軸
支部7が旋回上昇して当該パレツト9を受け取
り、マガジン5の移動により、抽出室3の図示し
ない抽出口へと順次搬送される。 In this way, when the pallet transfer device 14 supporting the pallets 9 is loaded into the extraction chamber 3, the loading chamber 1
In contrast to the operation described above, the shaft support 7 of the arm 6 waiting below pivots upward to receive the pallet 9, and as the magazine 5 moves, the pallet 9 is sequentially conveyed to the extraction port (not shown) of the extraction chamber 3.
なお、パレツト9の装入室1内のマガジン5
(アーム6)への装着あるいは抽出室3から装置
外への抽出時には、装入室1と抽出室3は外気と
連通するため、装入室1内のマガジン5にパレツ
ト9を保持したのち、前述した操作に先立つてス
リツトバルブ4を閉鎖して、装入室1内と抽出室
3内をパージし、所定雰囲気、圧力に調整するこ
とは勿論である。 In addition, the magazine 5 in the charging chamber 1 of the pallet 9
(Arm 6) or when extracting from the extraction chamber 3 to the outside of the apparatus, the charging chamber 1 and the extraction chamber 3 communicate with the outside air, so after holding the pallet 9 in the magazine 5 in the charging chamber 1, Of course, prior to the above-described operation, the slit valve 4 is closed, the charging chamber 1 and the extraction chamber 3 are purged, and the atmosphere and pressure are adjusted to a predetermined level.
つぎに、処理材Wとターゲツト材とを静止状態
で対向させて処理する場合には、スパツタリング
電極Dを処理材Wの形状に対応する形状のものと
し、前述のように、パレツト9がパレツト回転装
置22に支持されると、図示しない手段でステツ
ピングモータ24をパレツト回転停止位置確認手
段27によつて確認されるまで回転し、処理材W
がスパツタリング電極Dに正確に対向させる。そ
の後、第10図の静止対向処理用プロセスプログ
ラムP2により、ステツピングモータ24を停止
させた状態でスパツタリング電極Dを所定時間印
加してスパツタ処理を行う。 Next, when processing the processing material W and the target material in a stationary state facing each other, the sputtering electrode D has a shape corresponding to the shape of the processing material W, and as described above, the pallet 9 is rotated. When supported by the device 22, the stepping motor 24 is rotated by means not shown until it is confirmed by the pallet rotation stop position confirmation means 27, and the processing material W is rotated.
is precisely opposed to the sputtering electrode D. Thereafter, according to the process program P2 for stationary facing treatment shown in FIG. 10, sputtering is performed by applying sputtering electrode D for a predetermined time while the stepping motor 24 is stopped.
そして、スパツタ処理が終了すると、ステツピ
ングモータ24を予め定められたステツピングパ
ルス数だけ時間回転させて、未処理の処理材Wを
スパツタリング電極Dに対向させ、前記処理を行
い、パレツト9上の総ての処理材Wが処理される
と、前述のように、他の処理室2あるいは抽出室
3へと移行される。 When the sputtering process is finished, the stepping motor 24 is rotated for a predetermined number of stepping pulses, the untreated material W is placed opposite the sputtering electrode D, and the sputtering process is performed. Once all the processing materials W have been processed, they are transferred to another processing chamber 2 or extraction chamber 3, as described above.
前記実施例では、処理室2を3室とするととも
に、抽出室3を設けたが、処理室2は3室に限ら
ない、また、処理室2を1室とし抽出室3を省略
して装入室1で抽出室3をも兼ねるようにしても
よく、処理室2のみで構成してもよい。さらに、
スパツタリング電極Cの中心O′を処理材Wの中
心が描く円周上に位置させてもよく、また、処理
材Wをパレツトに固定し、公転のみ行なうように
してもよいことは勿論である。 In the above embodiment, the number of processing chambers 2 is three, and the extraction chamber 3 is provided. However, the number of processing chambers 2 is not limited to three. Alternatively, the number of processing chambers 2 may be one, and the extraction chamber 3 may be omitted. The entrance chamber 1 may also serve as the extraction chamber 3, or the processing chamber 2 may be configured only. moreover,
Of course, the center O' of the sputtering electrode C may be located on the circumference drawn by the center of the processing material W, or the processing material W may be fixed to a pallet and only revolve.
(発明の効果)
以上の説明から明らかなように、本発明にかか
るスパツタリング装置によれば、パレツトに複数
の処理材を同心円上に保持するとともに、処理室
の両側壁部対向位置に、それぞれ進退するパレツ
ト支持用スピンドルを設け、このスピンドルの一
方に、ステツピングモータを連結し、かつ、処理
室の両側壁部に複数のターゲツト材を着脱自在
で、放射状に配設する一方、処理室の所定位置に
パレツト回転停止位置確認手段を設けたものであ
るから、1台のスパツタリング装置で、パレツト
をステツピングモータで回転数を制御しながら連
続回転することにより処理材を公転あるいは自・
公転させてスパツタ処理を、また、パレツトをス
テツピングモータの回転数制御と回転停止確認手
段で間欠回転することにより、処理材を正確に所
定位置に静止させ、ターゲツト材と静止対向状態
でスパツタ処理を行なうことができる。(Effects of the Invention) As is clear from the above description, according to the sputtering apparatus according to the present invention, a plurality of processing materials are held concentrically on a pallet, and the processing materials are moved forward and backward into positions facing both side walls of the processing chamber. A stepping motor is connected to one of the spindles, and a plurality of target materials are removably disposed radially on both side walls of the processing chamber, and a plurality of target materials are arranged radially on both side walls of the processing chamber. Since a pallet rotation stop position confirmation means is provided at the sputtering device, a single sputtering device continuously rotates the pallet while controlling the number of rotations using a stepping motor, so that the material to be processed can be rotated or rotated.
Sputter processing is performed by rotating the pallet, and by intermittent rotation of the pallet using the stepping motor's rotation speed control and rotation stop confirmation means, the material to be processed is accurately stopped at a predetermined position, and sputter processing is performed while it is stationary and facing the target material. can be done.
第1図は本発明にかかるスパツタリング装置の
概略平面図、第2a図〜第2h図は第1図におい
てパレツトとキヤリア本体との動作を示す平面図
と側面図、第3図は処理室の一部破断斜視図、第
4a図と第4b図は押上シリンダとパレツト支持
台との関係を示す正面図、第5a図と第5b図は
パレツト回転装置の動作を示す説明用断面図、第
6図は処理材中心とターゲツト材中心との関係を
示す説明図、第7図〜第10図はターゲツトの側
壁部への取り付け状態を示す図およびその断面
図、第11図は処理室の断面図、第12図は第1
1図のパレツトの正面図で、第13図はステツピ
ングモータおよびスパツタリング電極C,Dの駆
動回路図である。
1〜装入室、2,2a,2b,2c〜処理室、
3〜抽出室、5〜マガジン、9,9a,9b〜パ
レツト、14〜パレツト移送装置、15〜キヤリ
ア本体、19〜パレツト支持台、20〜昇降(押
上)シリンダ、22〜パレツト回転装置、23〜
押圧スピンドル、24〜ステツピングモータ、2
5〜ターゲツト材、27〜パレツト回転停止位置
確認手段、28〜貫通孔、29〜投光器、30〜
受光器、C,D〜スパツタリング電極、O〜処理
材中心、O′〜ターゲツト材(スパツタリング電
極)中心。
Fig. 1 is a schematic plan view of a sputtering apparatus according to the present invention, Figs. 2a to 2h are a plan view and a side view showing the operation of the pallet and carrier body in Fig. 1, and Fig. 3 is a schematic plan view of a processing chamber. 4a and 4b are front views showing the relationship between the push-up cylinder and the pallet support base; FIGS. 5a and 5b are explanatory cross-sectional views showing the operation of the pallet rotating device; FIG. 6 is an explanatory diagram showing the relationship between the center of the processing material and the center of the target material; FIGS. 7 to 10 are diagrams showing how the target is attached to the side wall and a sectional view thereof; FIG. 11 is a sectional view of the processing chamber; Figure 12 is the first
1 is a front view of the pallet shown in FIG. 1, and FIG. 13 is a driving circuit diagram of the stepping motor and sputtering electrodes C and D. 1 - charging chamber, 2, 2a, 2b, 2c - processing chamber,
3-extraction chamber, 5-magazine, 9, 9a, 9b-pallet, 14-pallet transfer device, 15-carrier body, 19-pallet support stand, 20-lifting (push-up) cylinder, 22-pallet rotating device, 23-
Pressing spindle, 24 ~ stepping motor, 2
5 - Target material, 27 - Pallet rotation stop position confirmation means, 28 - Through hole, 29 - Floodlight, 30 -
Light receiver, C, D ~ sputtering electrode, O ~ center of processing material, O' ~ center of target material (sputtering electrode).
Claims (1)
し、該処理材に薄膜を形成するスパツタリング装
置において、前記パレツトに複数の処理材を同心
円上に保持するとともに、処理室の両側壁部対向
位置に、それぞれ進退するパレツト支持用スピン
ドルを設け、このスピンドルの一方に、ステツピ
ングモータを連結し、かつ、処理室の少なくとも
一方の側壁部に複数のターゲツト材を着脱自在
で、放射状に配設する一方、処理室の所定位置に
パレツト回転停止位置確認手段を設けたことを特
徴とするスパツタリング装置。 2 前記パレツト回転停止確認手段が、パレツト
に設けた貫通孔と処理室の側部に設けた投・受光
器からなる前記特許請求の範囲第1項に記載のス
パツタリング装置。[Scope of Claims] 1. A sputtering device that holds a plurality of processing materials on a vertical pallet and forms a thin film on the processing materials, in which a plurality of processing materials are held concentrically on the pallet and a sputtering apparatus is provided in a processing chamber. Pallet supporting spindles that move forward and backward are provided at opposing positions on both side walls, a stepping motor is connected to one of the spindles, and a plurality of target materials can be attached to and detached from at least one side wall of the processing chamber, What is claimed is: 1. A sputtering apparatus characterized in that the sputtering apparatus is arranged radially and further includes means for confirming the stop position of pallet rotation at a predetermined position in the processing chamber. 2. The sputtering apparatus according to claim 1, wherein the pallet rotation stop confirmation means comprises a through hole provided in the pallet and a light emitter/receiver provided on the side of the processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11756287A JPS63282260A (en) | 1987-05-13 | 1987-05-13 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11756287A JPS63282260A (en) | 1987-05-13 | 1987-05-13 | Sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63282260A JPS63282260A (en) | 1988-11-18 |
| JPH052738B2 true JPH052738B2 (en) | 1993-01-13 |
Family
ID=14714886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11756287A Granted JPS63282260A (en) | 1987-05-13 | 1987-05-13 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63282260A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3912297C2 (en) * | 1989-04-14 | 1996-07-18 | Leybold Ag | Cathode sputtering system |
| WO2016017510A1 (en) * | 2014-07-31 | 2016-02-04 | 株式会社 アルバック | Substrate processing device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5838757B2 (en) * | 1979-09-29 | 1983-08-25 | 株式会社東芝 | Nuclear reactor remote shutdown control device |
| JPS58110671A (en) * | 1981-12-24 | 1983-07-01 | Tanaka Kikinzoku Kogyo Kk | Method and device for sputtering of mixed thin films |
| JPS5938307A (en) * | 1982-08-25 | 1984-03-02 | Nippon Kokan Kk <Nkk> | Blending method of lump iron ore for blast furnaces |
| JPS5934947U (en) * | 1982-08-31 | 1984-03-05 | 三菱重工業株式会社 | Test specimen polishing tool |
| JPS60506U (en) * | 1983-06-15 | 1985-01-05 | 富士通株式会社 | Wire length measuring device |
| JPH06102829B2 (en) * | 1984-03-28 | 1994-12-14 | 日電アネルバ株式会社 | Discharge reaction treatment device |
| JPS60230976A (en) * | 1984-05-02 | 1985-11-16 | Hitachi Ltd | Device for detecting position |
| JPS61102807U (en) * | 1984-12-10 | 1986-06-30 |
-
1987
- 1987-05-13 JP JP11756287A patent/JPS63282260A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63282260A (en) | 1988-11-18 |
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