JPH052739B2 - - Google Patents
Info
- Publication number
- JPH052739B2 JPH052739B2 JP58217136A JP21713683A JPH052739B2 JP H052739 B2 JPH052739 B2 JP H052739B2 JP 58217136 A JP58217136 A JP 58217136A JP 21713683 A JP21713683 A JP 21713683A JP H052739 B2 JPH052739 B2 JP H052739B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- support plate
- cooling water
- cooling
- brazed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はターゲツトの冷却方法に係り、特に支
持板付スパツターターゲツトの冷却方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for cooling a target, and more particularly to a method for cooling a sputter target with a support plate.
(b) 従来技術と問題点
たとえば半導体集積回路などの半導体装置を製
造する際に、半導体基板に多数の半導体素子が設
けられて、これらの素子を接続するためにたとえ
ばアルミニウム（Al）などの配線金属層を形成
する方法としてスパツタ方法が用いられている。(b) Prior art and problems For example, when manufacturing semiconductor devices such as semiconductor integrated circuits, a large number of semiconductor elements are provided on a semiconductor substrate, and wiring made of aluminum (Al) or the like is used to connect these elements. A sputtering method is used as a method for forming the metal layer.
このスパツター方法に使用される従来のたとえ
ば支持板及びターゲツトの冷却方法を説明するた
めの模式的概略構成を第１図に示す。 FIG. 1 shows a schematic structure for explaining a conventional method of cooling a support plate and a target used in this sputtering method.
同図において１はターゲツト、２は該ターゲツ
トがロウ付けされた支持板（Backing Plate）、
３はターゲツトに磁場を付加するためのマグネツ
ト、４は連結棒、５はマグネツトを回転させるた
めのモーター、６は該支持板付ターゲツトを冷却
するための冷却水の導入管、７は同じく冷却水の
排出管、８は底板、９は冷却水である。所でスパ
ツターを行う場合に処理能力の向上、膜質の改善
のため、高いパワーで短時間に、たとえば半導体
基板上に所定の膜厚（〜約1μｍ）を形成させて
いる。 In the figure, 1 is a target, 2 is a backing plate to which the target is brazed,
3 is a magnet for applying a magnetic field to the target, 4 is a connecting rod, 5 is a motor for rotating the magnet, 6 is a cooling water introduction pipe for cooling the target with a support plate, and 7 is also a cooling water pipe. A discharge pipe, 8 a bottom plate, and 9 cooling water. When sputtering is performed on-site, a predetermined thickness (about 1 μm) is formed on a semiconductor substrate, for example, in a short time using high power in order to improve throughput and film quality.
又スパツターターゲツトは一般に半導体基板と
対向してかつ垂直に保持されているとスパツタさ
れる時にターゲツト１の冷却が充分でないと、支
持板２にロウ付けされたターゲツト１の骨落が起
る事がある。 In addition, if the sputter target is generally held vertically facing the semiconductor substrate, if the target 1 is not cooled sufficiently during sputtering, the target 1 soldered to the support plate 2 may break down. There is.
即ち第１図に示すように従来のターゲツトの冷
却方法は、ターゲツト１が接着された支持板２を
間接的に冷却している。この場合、冷却水の流量
を出来る限り多くして冷却効率が高くするために
は、支持板２とマグネツト３にはさまれた冷却水
通路（矢印Ｂ）を、冷却水通路（矢印Ｃ）よりも
広くとつてやる必要がある。一方、ターゲツト直
上の磁場を強くするためには、マグネツト３は出
来るだけターゲツトに近い事が望ましい。こうし
て前記２つの要求を同時に満たすように冷却水を
流す事はむつかしく矢印ＢとＣの冷却水通路を殆
ど同じ巾をもち冷却効果は半減していた。 That is, as shown in FIG. 1, in the conventional target cooling method, a support plate 2 to which a target 1 is bonded is indirectly cooled. In this case, in order to increase the flow rate of cooling water as much as possible and improve cooling efficiency, the cooling water passage (arrow B) sandwiched between the support plate 2 and the magnet 3 should be routed closer to the cooling water passage (arrow C) than the cooling water passage (arrow C). It is also necessary to do this widely. On the other hand, in order to strengthen the magnetic field directly above the target, it is desirable that the magnet 3 be as close to the target as possible. In this way, it is difficult to flow cooling water so as to satisfy the above two requirements at the same time, and the cooling water passages indicated by arrows B and C have almost the same width, which reduces the cooling effect by half.
(c) 発明の目的
本発明の目的はかかる問題点に鑑みなされたも
ので、支持板付スパツターターゲツトの冷却方法
において、効率よくターゲツトを冷却し、高いパ
ワーで短時間のスパツターにおいてもターゲツト
の滑落を防止することが可能なターゲツトの冷却
方法の提供にある。(c) Purpose of the Invention The purpose of the present invention has been made in view of the above-mentioned problems.The purpose of the present invention is to provide a method for cooling a sputter target with a support plate, which efficiently cools the target and prevents the target from slipping even during short-time sputtering with high power. The purpose of the present invention is to provide a method for cooling a target that can prevent the above.
(d) 発明の構成
その目的を達成するため本発明はターゲツト
と、表面に前記ターゲツトがろう付けされたター
ゲツト支持板と、前記支持板の背面の近傍に配置
された磁石とを有し、
前記支持板の内部に冷却水を導入し、かつ前記
支持板の表面に沿つて該支持板内部に前記冷却水
の通路を設け、前記支持板内部に導入した冷却水
により前記ろう付け材料を介して前記ターゲツト
を冷却するようにしたことを特徴とする。(d) Structure of the Invention In order to achieve the object, the present invention includes a target, a target support plate on which the target is brazed, and a magnet disposed near the back surface of the support plate. Cooling water is introduced into the inside of the support plate, and a passage for the cooling water is provided inside the support plate along the surface of the support plate, and the cooling water introduced into the inside of the support plate flows through the brazing material. It is characterized in that the target is cooled.
(e) 発明の実施例
以下本発明の実施例について図面を参照して説
明する。(e) Embodiments of the invention Examples of the invention will be described below with reference to the drawings.
第２図は本発明の一実施例のターゲツトの冷却
方法を説明するための模式的概略構成図、第３図
ａ，ｂ及び第４図は冷却水の流通経路を説明する
ための模式的要部平面図で、前図と同等の部分に
ついては同一符号を付している。 FIG. 2 is a schematic diagram for explaining a method of cooling a target according to an embodiment of the present invention, and FIGS. 3a, b, and 4 are schematic diagrams for explaining a cooling water flow path. In this partial plan view, parts that are equivalent to those in the previous figure are given the same reference numerals.
第２図および第３図において１１はターゲツ
ト、１２は該ターゲツト１１がロウ付けされた支
持板（Backiny Plate）、１３は支持板１２の側
壁１２−１に設けられた冷却水導入孔、１４はタ
ーゲツト１１がロウ付けされた支持板上部に螺線
状に設けられた冷却水流通路、１５は他の側壁１
２−２に設けられた排水孔、１６はターゲツトに
磁場を付加するためのマグネツト、１７は連結
棒、１８はマグネツトを回転させるためのモータ
ー、１９は底板を示す。 In FIGS. 2 and 3, 11 is a target, 12 is a support plate (backiny plate) to which the target 11 is brazed, 13 is a cooling water introduction hole provided in the side wall 12-1 of the support plate 12, and 14 is a backiny plate. A cooling water flow passage provided in a spiral shape on the upper part of the support plate to which the target 11 is brazed; 15 is the other side wall 1;
A drainage hole is provided at 2-2, 16 is a magnet for applying a magnetic field to the target, 17 is a connecting rod, 18 is a motor for rotating the magnet, and 19 is a bottom plate.
図から明らかなように本発明が従来と特に異な
る点はターゲツト１１がロウ付けされた支持板１
２中に直接冷却水を導入してターゲツトを効率よ
く冷却し、かつ支持板１２の側壁１２−１，１
２・２を利用して前記冷却水の流出入の通路とし
た点である。 As is clear from the figure, the present invention is particularly different from the conventional one in that the support plate 1 to which the target 11 is brazed is
Cooling water is directly introduced into the support plate 12 to efficiently cool the target, and the side walls 12-1, 1 of the support plate 12 are
2.2 is used as a passage for the inflow and outflow of the cooling water.
即ち第３図ａ及びｂに示すように冷却水導入孔
１３より冷却水を導入してターゲツトがロウ付け
された支持板上部に螺線に設けられた冷却水流通
路１４を通してターゲツト１１を効率よく冷却し
排水孔１５より排水する構造にしたことである。 That is, as shown in FIGS. 3a and 3b, cooling water is introduced from the cooling water introduction hole 13 to efficiently cool the target 11 through the cooling water flow path 14 provided in a spiral pattern on the upper part of the support plate to which the target is brazed. The structure is such that water is drained from the drain hole 15.
かかる構造による冷却方法によればターゲツト
が効率よく冷却されるのみならず、冷却機構が簡
素化されかつターゲツト交換が容易となる利点が
ある。上記冷却方法において第４図に示すように
冷却水の排水孔１５を中央部に設け側壁により冷
却水導入孔１３を設けてもよくかかる場合には第
３図の場合と異なりマグネツトが冷却水中を回転
する事になるが冷却効果は更に向上させる事が可
能である。 A cooling method using such a structure not only allows the target to be efficiently cooled, but also has the advantage of simplifying the cooling mechanism and facilitating target replacement. In the above cooling method, as shown in FIG. 4, the cooling water drain hole 15 may be provided in the center and the cooling water inlet hole 13 may be provided in the side wall. In such a case, unlike the case shown in FIG. Although it will rotate, the cooling effect can be further improved.
(f) 発明の効果
以上説明したごとく本発明によれば支持板側壁
を利用して冷却水の流出入の通路とし、ターゲツ
トが接着された支持板中に直接冷却水を導入して
該ターゲツトを効率よく冷却することが可能とな
り、スパツター時において高いパワーで短時間で
処理を行なうことができ生産性向上、及び品質向
上に効果がある。(f) Effects of the Invention As explained above, according to the present invention, the side wall of the support plate is used as a path for the inflow and outflow of cooling water, and the cooling water is directly introduced into the support plate to which the target is adhered, thereby cooling the target. It enables efficient cooling, and allows processing to be performed with high power in a short time during sputtering, which is effective in improving productivity and quality.
第１図は従来のターゲツトの冷却方法を説明す
るための模式的概略構成図、第２図は本発明の一
実施例のターゲツトの冷却方法を説明するための
模式的概略構成図、第３図ａ，ｂ及び第４図は冷
却水の流通経路を説明するための模式的要部平面
図である。図において、１１はターゲツト、１２
は支持板、１２−１，１２−２は該支持板の側
壁、１３は冷却水導入孔、１４は冷却水流通路、
１５は排水孔を示す。
FIG. 1 is a schematic diagram for explaining a conventional target cooling method, FIG. 2 is a schematic diagram for explaining a target cooling method according to an embodiment of the present invention, and FIG. FIGS. 4A, 4B and 4 are schematic plan views of main parts for explaining the flow path of cooling water. In the figure, 11 is the target, 12
12-1, 12-2 are side walls of the support plate, 13 is a cooling water introduction hole, 14 is a cooling water flow passage,
15 indicates a drainage hole.
Claims (1)
付けされたターゲツト支持板と、前記支持板の背
面の近傍に配置された磁石とを有し、 前記支持板の内部に冷却水を導入し、かつ前記
支持板の表面に沿つて該支持板内部に前記冷却水
の通路を設け、前記支持板内部に導入した冷却水
により前記ろう付け材料を介して前記ターゲツト
を冷却するようにしたことを特徴とするターゲツ
トの冷却方法。[Scope of Claims] 1. A target having a target, a target support plate on which the target is brazed, and a magnet disposed near the back surface of the support plate, and cooling water is supplied to the inside of the support plate. and a passage for the cooling water is provided inside the support plate along the surface of the support plate, so that the cooling water introduced into the support plate cools the target via the brazing material. A method for cooling a target, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21713683A JPS60110873A (en) | 1983-11-17 | 1983-11-17 | Method for cooling target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21713683A JPS60110873A (en) | 1983-11-17 | 1983-11-17 | Method for cooling target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60110873A JPS60110873A (en) | 1985-06-17 |
| JPH052739B2 true JPH052739B2 (en) | 1993-01-13 |
Family
ID=16699414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21713683A Granted JPS60110873A (en) | 1983-11-17 | 1983-11-17 | Method for cooling target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60110873A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6279870U (en) * | 1985-11-05 | 1987-05-21 | ||
| US5180478A (en) * | 1990-12-19 | 1993-01-19 | Intevac, Inc. | Sputter coating source |
| AU2003301622A1 (en) * | 2002-10-24 | 2004-05-13 | Honeywell International Inc | Target designs and related methods for enhanced cooling and reduced deflection and deformation |
| EP1903123B1 (en) * | 2004-11-19 | 2012-02-22 | Applied Materials GmbH & Co. KG | Mounting plate with a cooled backing plate set on top |
| US7799190B2 (en) * | 2005-04-14 | 2010-09-21 | Tango Systems, Inc. | Target backing plate for sputtering system |
| JP6636796B2 (en) * | 2015-12-24 | 2020-01-29 | 株式会社アルバック | Sputtering apparatus and sputtering method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5677380A (en) * | 1979-11-28 | 1981-06-25 | Hitachi Ltd | Sputtering apparatus |
| JPS5949308B2 (en) * | 1980-02-07 | 1984-12-01 | 日電アネルバ株式会社 | sputtering equipment |
-
1983
- 1983-11-17 JP JP21713683A patent/JPS60110873A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60110873A (en) | 1985-06-17 |
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