JPH052780A - Stamper manufacturing method - Google Patents
Stamper manufacturing methodInfo
- Publication number
- JPH052780A JPH052780A JP15704391A JP15704391A JPH052780A JP H052780 A JPH052780 A JP H052780A JP 15704391 A JP15704391 A JP 15704391A JP 15704391 A JP15704391 A JP 15704391A JP H052780 A JPH052780 A JP H052780A
- Authority
- JP
- Japan
- Prior art keywords
- master
- stamper
- electroforming
- polishing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
(57)【要約】
【目的】 スタンパー付き原盤の反り量を小さくして厚
さが均一なスタンパーを容易に得られるようにする。
【構成】 平面性良く研磨されたガラスなどの基板11
の表面にで所定の深さに凹凸パターンの樹脂膜10を形
成した原盤であるガラス原盤3上に、ニッケル等の導電
化膜7を形成した後、所定の厚さまでニッケル等の電鋳
を行ない、導電化膜7と一体化してスタンパーとなる電
鋳膜4を形成する。この後、スタンパー付き原盤1の反
り量が一定以下になるように環境温度を調製しながら電
鋳膜4の裏面を鏡面研磨してスタンパー付き原盤(電鋳
膜付き原盤)1とし、スタンパー付き原盤1の電鋳膜4
をガラス原盤3から剥離することで、金属のスタンパー
を得る。
(57) [Summary] [Purpose] To reduce the warp amount of the master with stamper so that a stamper with a uniform thickness can be easily obtained. [Structure] Substrate 11 made of glass or the like that is polished with good flatness
After forming a conductive film 7 made of nickel or the like on a glass master 3 which is a master having a resin film 10 having a concavo-convex pattern formed at a predetermined depth on its surface, electroforming of nickel or the like is performed to a predetermined thickness. Then, the electroformed film 4 which is integrated with the conductive film 7 and serves as a stamper is formed. After that, the back surface of the electroformed film 4 is mirror-polished while adjusting the environmental temperature so that the warp amount of the stamped master 1 becomes equal to or less than a predetermined amount, and the stamped master (electroformed film master) 1 is obtained. Electroformed film 4 of 1
Is peeled off from the glass master 3 to obtain a metal stamper.
Description
【0001】[0001]
【産業上の利用分野】本発明は、光ビームの照射によっ
て光学特性を変化させて、情報の記録、再生を行なう光
学的情報記録媒体(光記録媒体)の成型等に用いられる
スタンパーの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a stamper used for molding an optical information recording medium (optical recording medium) for recording and reproducing information by changing the optical characteristics by irradiation of a light beam. Regarding
【0002】[0002]
【従来の技術】従来、多種多様の情報を効率良く取り扱
う手段として、光記録媒体による光学的情報記録方法が
提案され、そのための光学的情報記録担体、記録再生方
法および記録再生装置が提案されている。かかる情報記
録担体としての光記録媒体は、一般にレーザー光を用い
て情報記録担体上の光記録層の一部を揮散させるか、反
射率の変化を生じさせるか、あるいは変形を生じさせ
て、光学的な反射率や透過率の差によって情報を記録
し、あるいは再生を行なっている。この場合、光記録層
は、情報を書き込んだ後、現像処理などの必要がなく、
「書いた後に直読する」ことのできる、いわゆるDRA
W(ダイレクトリードアフターライト)媒体であり、高
密度記録が可能であり、また追加書き込みも可能である
ことから、情報の記録、保存媒体として有効である。2. Description of the Related Art Conventionally, as a means for efficiently handling a wide variety of information, an optical information recording method using an optical recording medium has been proposed, and an optical information recording carrier, a recording / reproducing method, and a recording / reproducing apparatus therefor have been proposed. There is. The optical recording medium as such an information recording carrier is generally an optical recording medium that volatilizes a part of the optical recording layer on the information recording carrier using a laser beam, causes a change in reflectance, or causes a deformation to produce an optical recording medium. Information is recorded or reproduced by the difference in the typical reflectance or transmittance. In this case, the optical recording layer does not require development processing after writing information,
So-called DRA that can be "read directly after writing"
Since it is a W (Direct Read After Write) medium, high density recording is possible and additional writing is possible, it is effective as a recording and storage medium of information.
【0003】一般的な光記録媒体では、熱可塑性樹脂で
あるポリカーボネート樹脂やポリメチルメタクリル樹脂
をトラックや情報に対応する凹凸パターンが記録されて
いるスタンパーを用いて、その凹凸パターンを転写して
溝部を形成している。特開昭61−284843号公
報、実開昭58−141435号公報および「光ディス
クプロセス技術の要点No.5」(昭和60年3月15
日、日本工業技術センター発行)には、従来の情報記録
媒体成型用のスタンパーの製造方法が記載されている。In a general optical recording medium, a polycarbonate resin or polymethylmethacrylate resin, which is a thermoplastic resin, is used by using a stamper on which an uneven pattern corresponding to a track or information is recorded, and the uneven pattern is transferred to the groove portion. Is formed. Japanese Unexamined Patent Publication No. 61-284843, Japanese Utility Model Laid-Open No. 58-141435, and "Point No. 5 of optical disk process technology" (March 15, 1985)
JP, Japan Industrial Technology Center), a conventional method for manufacturing a stamper for molding an information recording medium is described.
【0004】これらのスタンパーの製造方法は、平面性
良く研磨されたガラスなどの基板の表面に所定の深さに
凹凸パターンの樹脂膜を形成したガラス製の原盤上に、
ニッケル等の導電化膜を形成した後、液温度45〜50
℃の電鋳液中で所定の厚さまでニッケル等の電鋳を行な
い、導電化膜と一体化してスタンパーとなる電鋳膜を形
成し、スタンパー付き原盤とする。この後、室温の環境
下でスタンパー付き原盤の電鋳膜の裏面を鏡面研磨し
て、この電鋳膜を基板から剥離することで、スタンパー
を得ている。These stampers are manufactured by forming a resin film having a concavo-convex pattern at a predetermined depth on the surface of a substrate made of glass or the like that has been polished to have a good flatness.
After forming a conductive film of nickel or the like, the liquid temperature is 45 to 50.
Electroforming of nickel or the like is performed in an electroforming liquid at a temperature of ℃ to a predetermined thickness to form an electroformed film that is integrated with the conductive film to serve as a stamper, and is used as a master with a stamper. After that, the back surface of the electroformed film of the master with a stamper is mirror-polished in an environment at room temperature, and the electroformed film is peeled from the substrate to obtain the stamper.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来の技術では、液温度45〜50℃の環境で電鋳された
スタンパー付き原盤を、例えば、25℃の室温で取り扱
う場合に、その温度差は20〜25℃であるから、図3
に示すように、ガラス製の基板21とニッケル製のの電
鋳膜(スタンパー)24との熱膨張率の違い(ガラスは
9〜10×10-6/℃、ニッケルは15×10-6/℃)
により、バイメタル状の反りを生じる。特に反りは薄く
て面積が大きい原盤を用いたときには顕著に現れる。電
鋳後の研磨工程において、反りがあると厚さを均一にす
るのが困難になるという問題点がある。一般に原盤はガ
ラスであるので曲げるのにはかなり大きな力を要するた
め、反ったスタンパー付き原盤を反りを矯正して研磨す
るのは困難であるという問題点があり、その上に、あま
り強い力を加えると原盤が壊れてしまうという問題点が
ある。また、反りを抑えるためには、原盤のガラスをよ
り厚いものにすることで対処できるが、作業性が悪くな
る、コストが高くなる等の問題点もある。However, in the above-mentioned conventional technique, when a master with a stamper electroformed in an environment of a liquid temperature of 45 to 50 ° C. is handled at room temperature of 25 ° C., for example, the temperature difference is Since it is 20 to 25 ° C., FIG.
As shown in, the difference in coefficient of thermal expansion between the glass substrate 21 and the nickel electroformed film (stamper) 24 (9 to 10 × 10 −6 / ° C. for glass, 15 × 10 −6 / ° C. for nickel). ℃)
This causes a bimetal-like warp. In particular, the warp is remarkable when a master having a small area and a large area is used. In the polishing step after electroforming, if there is a warp, it becomes difficult to make the thickness uniform. Generally, since the master is glass, it takes a considerable amount of force to bend it, so there is a problem that it is difficult to correct the warp of the master with a warped stamper and polish it. There is a problem that the master will be broken if added. Further, in order to suppress the warp, it is possible to deal with it by making the glass of the master plate thicker, but there are problems such as poor workability and high cost.
【0006】本発明は上記の問題点に鑑みてなされたも
のであり、その目的は、スタンパー付き原盤の反り量を
小さくして厚さが均一なスタンパーを容易に得られるス
タンパーの製造方法を提供することにある。The present invention has been made in view of the above problems, and an object thereof is to provide a method for manufacturing a stamper in which a warp amount of a master with a stamper can be reduced and a stamper having a uniform thickness can be easily obtained. To do.
【0007】[0007]
【課題を解決するための手段】本発明のスタンパーの製
造方法は、記録すべき情報に対応した凹凸パターンが形
成されたスタンパー付き原盤に、電鋳を行なう電鋳工程
および研磨を行なう研磨工程を有するスタンパーの製造
方法において、前記スタンパー付き原盤を反り量が一定
以下になる温度環境下で前記研磨工程を行なうことを特
徴とする。According to the stamper manufacturing method of the present invention, an electroforming step for performing electroforming and a polishing step for performing polishing are performed on a stamper master having an uneven pattern corresponding to information to be recorded. In the method for manufacturing a stamper that is provided, it is characterized in that the polishing step is performed in a temperature environment in which the amount of warpage of the stamper-equipped master is equal to or less than a certain value.
【0008】また、本発明のスタンパーの製造方法は、
記録すべき情報に対応した凹凸パターンが形成されたス
タンパー付き原盤に、電鋳を行なう電鋳工程および研磨
を行なう研磨工程を有するスタンパーの製造方法におい
て、前記スタンパー付き原盤を反り量が一定以下になる
ように、環境温度を調整しながら前記研磨工程を行なう
ことを特徴とする。Further, the stamper manufacturing method of the present invention is
In a stamper manufacturing method having an electroforming step for performing electroforming and a polishing step for performing polishing on a stamper-containing master having a concavo-convex pattern corresponding to information to be recorded, the warp amount of the stamper-containing master is less than a certain amount. Therefore, the polishing step is performed while adjusting the environmental temperature.
【0009】[0009]
【作用】反り量が一定以下になる温度環境下で、また
は、反り量が一定以下になるように環境温度を調整しな
がら研磨工程を行なうことによって、スタンパーと原盤
の熱膨張率の違いによる反りを減らして、スタンパーの
厚さを一定に研磨するのを容易にする。[Operation] In a temperature environment where the amount of warp is below a certain level, or by performing the polishing process while adjusting the environmental temperature so that the amount of warpage is below a certain amount, the warpage due to the difference in the coefficient of thermal expansion between the stamper and the master is caused. To make it easier to grind the stamper to a constant thickness.
【0010】[0010]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。本実施例のスタンパーの製造方法は、図1
に示すように、平面性良く研磨されたガラスなどの基板
11の表面にレジストや感光性樹脂(レプリカ樹脂)で
所定の深さに凹凸パターンの樹脂膜10を形成した原盤
であるガラス原盤3(図1(a))上に、ニッケル等の
導電化膜7を形成した後(図1(b))、所定の厚さま
でニッケル等の電鋳を行ない、導電化膜7と一体化して
スタンパーとなる電鋳膜4を形成する。この後、スタン
パー付き原盤を反り量が一定以下になるように環境温度
を調製しながら電鋳膜4の図示上面である裏面を鏡面研
磨してスタンパー付き原盤(電鋳膜付き原盤)1とし
(図1(c))、スタンパー付き原盤1の電鋳膜4をガ
ラス原盤3から剥離することで、金属のスタンパーを得
る。Embodiments of the present invention will now be described with reference to the drawings. The stamper manufacturing method of this embodiment is shown in FIG.
As shown in, a glass master 3 (which is a master in which a resin film 10 having a concavo-convex pattern is formed at a predetermined depth with a resist or a photosensitive resin (replica resin) on the surface of a substrate 11 such as glass which has been polished with good flatness. After forming a conductive film 7 of nickel or the like on FIG. 1 (a) (FIG. 1 (b)), electroforming of nickel or the like is performed to a predetermined thickness to integrate the conductive film 7 with a stamper. The electroformed film 4 is formed. After that, while adjusting the environmental temperature so that the warp amount of the stamper-equipped master becomes less than a certain value, the back surface of the electroformed film 4, which is the upper surface in the drawing, is mirror-polished to obtain a stamper-equipped master (electroformed film-coated master) 1 ( In FIG. 1C, the electroformed film 4 of the master 1 with a stamper is peeled off from the glass master 3 to obtain a metal stamper.
【0011】図2は本実施例に使用される環境温度を調
製する方法の一例を示す模式図である。電鋳膜4、樹脂
膜10および基板11からなるスタンパー付き原盤1
が、公知の恒温槽で構成された加温機構5内に収納され
た研磨装置2に取り付けられている。この加温機構5に
よって、スタンパー付き原盤1と研磨装置2を反りが一
定以下の大きさまで小さくなる温度環境にしてから、平
面研磨を行なう。FIG. 2 is a schematic view showing an example of the method for adjusting the environmental temperature used in this embodiment. Master 1 with stamper consisting of electroformed film 4, resin film 10 and substrate 11
Is attached to a polishing device 2 housed in a heating mechanism 5 composed of a known constant temperature bath. By this heating mechanism 5, the stamper master 1 and the polishing device 2 are brought into a temperature environment in which the warp is reduced to a certain level or less, and then the surface polishing is performed.
【0012】本発明における研磨時の環境温度は、反り
が一定以下に小さくなる温度であれば、いずれの温度で
も用いることができる。反り量は、スタンパー付き原盤
1の面積、形(丸、四角など)、原盤、スタンパー(電
鋳膜)の厚さによって異なるので、スタンパー付き原盤
の環境温度を調製し、反りが一定量以下になる温度を調
べて、その温度環境下にスタンパー付き原盤1と研磨装
置2を置いて研磨を行なう。好ましい温度環境は、電鋳
時の液温度とほとんど同じ温度、すなわち液温度±20
℃以内、好ましくは±10℃以内、より好ましくは±5
℃以内の範囲である。反り量を最大値で100μm以
下、より好ましくは50μm以下まで小さくする。研磨
を行なって電鋳膜4が薄くなると反り量も変化して小さ
くなるので、環境温度を変えて、一定の反り量に制御す
ることも必要に応じて自由になってよい。The environmental temperature during polishing in the present invention may be any temperature as long as the temperature is such that the warp is below a certain level. The amount of warp varies depending on the area, shape (circle, square, etc.) of stamper master 1, thickness of master and stamper (electroformed film), so adjust the environmental temperature of the master with stamper to keep the warp below a certain amount. Then, the master 1 with a stamper and the polishing device 2 are placed under that temperature environment for polishing. A preferable temperature environment is almost the same as the liquid temperature during electroforming, that is, the liquid temperature ± 20.
Within ℃, preferably within ± 10 ℃, more preferably ± 5
Within the range of ℃. The warp amount is reduced to a maximum value of 100 μm or less, more preferably 50 μm or less. When the electroformed film 4 is thinned by polishing, the amount of warp also changes and becomes smaller. Therefore, it is also possible to freely control the amount of warp by changing the environmental temperature.
【0013】環境温度を調製する方法としては、図2に
示す加温機構5の中に研磨装置2を入れて環境温度を室
温よりも高くして研磨する方法のほか、温度を室温より
も高くした液の中に研磨装置2を入れて、その中でスタ
ンパー付き原盤1を研磨する方法、研磨装置2の研磨皿
を一定温度まで加温して研磨する方法などの中から必要
に応じて自由に選択できる。As a method for adjusting the ambient temperature, there is a method in which the polishing apparatus 2 is placed in the heating mechanism 5 shown in FIG. 2 to polish the ambient temperature higher than room temperature, or the temperature is raised higher than room temperature. The polishing device 2 is put into the prepared liquid, and the master 1 with a stamper is polished therein, the polishing dish of the polishing device 2 is heated to a certain temperature, and the polishing is freely performed. You can choose to.
【0014】ガラス原盤3を構成する基板11の材質
は、平面度、平行度良く平面研磨できる材料であれば、
いずれの材質でも用いることができる。例えば、ガラ
ス、セラミックス、金属、金属化合物などの材料が好ま
しい。基板11の厚さは重量、値段などが適当な範囲で
自由に選択できる。基板11の形状、面積によるが、1
〜30mmの範囲が好ましい。基板11の面積は小さい
と反りは小さくなるが、一枚に入れられるパターンの大
きさ、数が小さくまたは少なくなってしまい、大きいと
基板11の機械的な強度が弱くなって、自重でも反って
しまう。丸形状の直角、角形状の対角線の長さで10〜
2000mmの範囲が好ましい。As long as the material of the substrate 11 constituting the glass master 3 is a material capable of flat polishing with good flatness and parallelism,
Any material can be used. For example, materials such as glass, ceramics, metals, and metal compounds are preferable. The thickness of the substrate 11 can be freely selected within a proper range such as weight and price. 1 depending on the shape and area of the substrate 11.
A range of up to 30 mm is preferred. If the area of the substrate 11 is small, the warp will be small, but the size and number of patterns to be put in one sheet will be small or small, and if the area is large, the mechanical strength of the substrate 11 will be weak and the board 11 will warp under its own weight. I will end up. Round-shaped right angle, square-shaped diagonal length of 10 to 10
A range of 2000 mm is preferred.
【0015】基板11にトラック溝などの凹凸パターン
を形成する方法は、フォトレジストを均一厚さに塗布し
てから露光、現象を行なう方法や、あらかじめ凹凸パタ
ーンが形成されたマスターから紫外線硬化樹脂などで凹
凸パターンを転写して形成する方法、またはフォトレジ
ストを塗布して、同じように露光、現象を行なってか
ら、ドライまたはウエットでエッチングする方法の中か
ら自由に選択できる。As a method for forming a concavo-convex pattern such as a track groove on the substrate 11, a method of applying a photoresist to a uniform thickness and then performing exposure and a phenomenon, or a master in which a concavo-convex pattern is formed beforehand and an ultraviolet curable resin are used. Can be freely selected from the method of transferring and forming the concavo-convex pattern with, or the method of applying a photoresist, performing the same exposure and phenomenon, and then performing dry or wet etching.
【0016】ガラス原盤3に電鋳する電鋳膜4(すなわ
ちスタンパー)の材質は金、クロム、ニッケルなどの金
属またはその合金、化合物の中から自由に選択できる。
また表面層、中間に別な材料の層を入れた多層構成にし
ても良い。好ましい材質はニッケルまたはその合金であ
る。電鋳膜4の厚さは、電鋳膜4を用いて形成を行なう
ときに用いる成形方法(射出成形、プレス成形、押出し
成形、紫外線または電子線硬化樹脂成形)に必要な強度
によって自由に選択できる。好ましい厚さは10〜10
00μmの範囲である。電鋳するときの電鋳液(メッキ
液)の温度は、用いる液の種類によって異なるが、10
〜100℃の範囲が好ましい。特にスルファミン酸ニッ
ケルメッキ液を用いる場合は40〜60℃の範囲が好ま
しい。電鋳条件も用いるメッキ液などによって適当な範
囲の中で自由に選択できる。適当な範囲としては、例え
ば、電鋳膜4の膜自身が応力をあまり持たない、膜の応
力値として山本鍍金試験器製スパイラル応力計によって
測定した値が、−3〜3kg/mm2 の範囲が好まし
い。The material of the electroformed film 4 (that is, stamper) to be electroformed on the glass master 3 can be freely selected from metals such as gold, chromium and nickel or alloys and compounds thereof.
Further, a multi-layer structure in which a layer of another material is inserted in the surface layer or in the middle may be used. The preferred material is nickel or its alloys. The thickness of the electroformed film 4 can be freely selected according to the strength required for the molding method (injection molding, press molding, extrusion molding, ultraviolet ray or electron beam curing resin molding) used when forming the electroformed film 4. it can. Preferred thickness is 10-10
It is in the range of 00 μm. The temperature of the electroforming liquid (plating liquid) during electroforming varies depending on the type of the liquid used, but it is 10
The range of -100 ° C is preferred. Especially when using a nickel sulfamate plating solution, the range of 40 to 60 ° C. is preferable. The electroforming conditions can be freely selected within an appropriate range depending on the plating solution used. As an appropriate range, for example, the film itself of the electroformed film 4 does not have much stress, and the stress value of the film measured by a spiral stress meter manufactured by Yamamoto Plating Tester is in the range of -3 to 3 kg / mm 2 . Is preferred.
【0017】以下、実験例を示し、本発明をさらに具体
的に説明するが、本発明がこれらに限定されるものでは
ない。
実験例1
厚さ10mm、φ355mmのガラス板(旭ガラス)上
にフォトレジスト(AZ1300,ヘキストジャパン)
を0.11μmの厚さに塗布して、レーザー露光機(松
下電器)でパターンを露光、現像して、ピッチ1.6μ
m、幅0.7μm、深さ1100Åの同心円の凹凸パタ
ーンを形成した。その後で、ニッケルを1000Åの厚
さにスタッパーして導電化処理した。この凹凸パターン
の形成されたガラス板を外形φ400mm、角度45
度、長さ10mmのテーパーの形成された原盤ホールダ
ーに固定した。陽極としてはニッケル球をチタンの篭に
入れて、綿布で覆ってごみの流失を抑えたものを用い
た。電鋳液としては、下記の組成に混合した液を、電鋳
槽に150リットル、予備槽に350リットルそれぞれ
入れて、液温度45℃で、液全体を10回/時間のサイ
クルで循環させた。Hereinafter, the present invention will be described more specifically by showing experimental examples, but the present invention is not limited thereto. Experimental Example 1 Photoresist (AZ1300, Hoechst Japan) on a glass plate (Asahi Glass) having a thickness of 10 mm and a diameter of 355 mm.
Is applied to a thickness of 0.11 μm, the pattern is exposed and developed with a laser exposure machine (Matsushita Electric), and the pitch is 1.6 μm.
A concavo-convex concavo-convex pattern having a width of m, a width of 0.7 μm, and a depth of 1100 Å was formed. After that, nickel was stapped to a thickness of 1000 Å to make it conductive. The glass plate on which this uneven pattern is formed has an outer diameter of 400 mm and an angle of 45 mm.
And fixed to a master holder in which a taper having a length of 10 mm was formed. The anode used was one in which a nickel ball was placed in a titanium basket and covered with a cotton cloth to prevent dust from flowing away. As the electroforming liquid, a liquid mixed with the following composition was put in an electroforming tank of 150 liters and a preliminary tank of 350 liters, and the whole liquid was circulated at a cycle of 10 times / hour at a liquid temperature of 45 ° C. .
【0018】スルファミン酸ニッケル(4水和物)45
0g/リットル
ホウ酸30g/リットル
ピット防止剤5mリットル/リットル
電流条件は0.1A/dm2 で30分間流してから、5
A/dm2 まで電流を上げて13000A分の積算電流
値になるまで電鋳を行なって、300μmの厚さの電鋳
膜を得た。電鋳膜が形成されたガラス原盤すなわちスタ
ンパー付き原盤を、室温(20℃)で平らな面の上に設
置して、反りを測定したところ、ガラス面(電鋳膜が形
成されない面)が凸になる方向でお椀形状に最大90μ
m反っていた(ダイアルゲージ、ミツトヨ)。電鋳膜の
厚さは、中央部で300±5μm、外周部で350±5
μmであった(マイクロメーター、ミツトヨ)。この反
ったスタンパー付き原盤を温水中で温度を上げながら反
り量の変化を測定した。30℃で70μm、40℃で4
0μm、45℃で30μm、50℃で20μmであっ
た。そこで50℃のアルミナを水と混合した研磨液に、
スタンパー付き原盤と研磨皿を全部浸して、膜厚が均一
な厚さで、面が全面で鏡面になるまで研磨した。電鋳膜
の厚さは全面で290±3μmであり、十分均一であっ
た。Nickel sulfamate (tetrahydrate) 45
0 g / liter boric acid 30 g / liter pit inhibitor 5 ml / liter Current condition is 0.1 A / dm 2 for 30 minutes, then 5
The current was increased to A / dm 2 and electroforming was performed until the integrated current value for 13000 A was reached to obtain an electroformed film having a thickness of 300 μm. A glass master with an electroformed film, that is, a master with a stamper, was placed on a flat surface at room temperature (20 ° C.) and the warpage was measured. The glass surface (the surface on which the electroformed film was not formed) was convex. Up to 90μ in a bowl shape
It was warped (dial gauge, Mitutoyo). The thickness of the electroformed film is 300 ± 5 μm in the central part and 350 ± 5 in the outer peripheral part.
μm (micrometer, Mitutoyo). This warped master with stamper was heated in warm water to measure the change in the amount of warp while raising the temperature. 70μm at 30 ℃, 4 at 40 ℃
It was 0 μm, 30 μm at 45 ° C., and 20 μm at 50 ° C. Therefore, in a polishing liquid in which alumina at 50 ° C was mixed with water,
The stamper master and the polishing dish were all immersed, and the entire surface was polished to a mirror surface with a uniform thickness. The thickness of the electroformed film was 290 ± 3 μm on the entire surface, which was sufficiently uniform.
【0019】実験例2
厚さ10mm、340×300mmのガラス板(旭ガラ
ス)と、同じ大きさで表面にピッチ12μm、幅3.0
μm、深さ3000Åの凹凸パターンが形成されたフォ
トマスク(HOYA)との間に50μmの厚さに紫外線
硬化樹脂(旭化成工業、A.P.R.)を挟んで硬化さ
せた。硬化後にフォトマスクを外してガラス原盤を得
た。このガラス原盤にスパッターでニッケルを1000
Å付けて導電膜とした。このガラス原盤を外形500m
mで角度45度、長さ10mmのテーパーが形成された
原盤ホールダーに設置した。実験例1と同じ電鋳装置、
電鋳液を用いて、実験例1と同じ液温度、同じ電流密度
で、10000A分電鋳を行なって200μmの電鋳膜
の付いたスタンパー付き原盤を得た。実験例1と同じよ
うに室温(20℃)で反りを測定すると、ガラス面が凸
になる方向でお椀形状に最大120μm反っていた。電
鋳液の温度と同じ45℃の加温機構にスタンパー付き原
盤を入れて、45℃の環境下で反りを測定すると最大3
5μmであった。電鋳膜の厚さは中央部で230±5μ
m、外周部で290±10μmであった。45℃の加温
機構に研磨装置を入れて、この環境下で実験例1と同じ
ように研磨を行なった。電鋳膜の厚さは全面で230±
3μmであり、十分均一であった。Experimental Example 2 A glass plate (Asahi Glass) having a thickness of 10 mm and 340 × 300 mm and having the same size with a pitch of 12 μm and a width of 3.0.
An ultraviolet curable resin (Asahi Kasei Kogyo, A.P.R.) having a thickness of 50 μm was sandwiched between a photomask (HOYA) having an uneven pattern of μm and a depth of 3000 Å and cured. After curing, the photomask was removed to obtain a glass master. Nickel is sputtered onto this glass master by 1000
Å Attached to form a conductive film. This glass master has an outer shape of 500 m
It was installed in a master holder in which a taper with an angle of 45 degrees and a length of 10 mm was formed. The same electroforming apparatus as in Experimental Example 1,
Using an electroforming liquid, electroforming was performed at 10,000 A for the same liquid temperature and the same current density as in Experimental Example 1 to obtain a stamper master having a 200 μm electroformed film. When the warpage was measured at room temperature (20 ° C.) in the same manner as in Experimental Example 1, the bowl shape was warped up to 120 μm in the direction in which the glass surface was convex. When the master with a stamper is put in a heating mechanism of 45 ° C, which is the same as the temperature of the electroforming liquid, and the warp is measured in an environment of 45 ° C, the maximum is 3
It was 5 μm. The thickness of electroformed film is 230 ± 5μ in the center
m and 290 ± 10 μm at the outer peripheral portion. A polishing apparatus was placed in a heating mechanism at 45 ° C., and polishing was performed in this environment in the same manner as in Experimental Example 1. The thickness of the electroformed film is 230 ± on the entire surface.
It was 3 μm and was sufficiently uniform.
【0020】実験例3
実験例1と同じ導電化処理を行なったガラス原盤、同じ
電鋳装置、同じ原盤ホールダー、同じ電鋳液、同じ液温
度、同じ電流密度で同じように電鋳した。実験例1と同
じように反りを測定すると、ガラス面が凸になる方向で
お椀形状に最大115μm反っていた。電鋳液の温度と
同じ45℃の加温機構にスタンパー付き原盤を入れて、
45℃の環境下で反りを測定すると最大35μmであっ
た。電鋳膜の厚さは中央部で230±5μm、外周部で
290±10μmであった。45℃の研磨液の中で実験
例1と同じように研磨を行なった。Experimental Example 3 The same electroforming was carried out in the same manner as in Experimental Example 1, except that the same glass master disk, the same electroforming apparatus, the same master holder, the same electroforming solution, the same liquid temperature, and the same current density were used. When the warpage was measured in the same manner as in Experimental Example 1, the bowl shape was warped at a maximum of 115 μm in the direction in which the glass surface was convex. Put the master with stamper in the heating mechanism of 45 ° C which is the same as the temperature of the electroforming liquid,
When the warp was measured in an environment of 45 ° C., the maximum was 35 μm. The thickness of the electroformed film was 230 ± 5 μm in the central portion and 290 ± 10 μm in the outer peripheral portion. Polishing was carried out in the same manner as in Experimental Example 1 in a polishing liquid at 45 ° C.
【0021】外周部を30μm研磨したらスタンパー付
き原盤の反りが最大15μmまで減少したため、研磨液
の温度を35℃まで下げた。さらに外周部を研磨して中
央部と同じ230μmになるまで研磨したら原盤の反り
量は再び10μmになったため、研磨液の温度を室温と
同じ25℃まで下げて研磨を続けた。研磨後の電鋳膜の
厚さは全面で200±3μmであり十分均一であった。When the outer peripheral portion was polished to 30 μm, the warp of the stamper-equipped master was reduced to a maximum of 15 μm, so the temperature of the polishing liquid was lowered to 35 ° C. When the outer peripheral portion was further polished to 230 μm, which is the same as the central portion, the amount of warp of the master became 10 μm again. Therefore, the temperature of the polishing liquid was lowered to 25 ° C., which is the same as room temperature, and polishing was continued. The thickness of the electroformed film after polishing was 200 ± 3 μm over the entire surface, which was sufficiently uniform.
【0022】比較例1
実験例1と同じ導電化処理を行なった原盤、同じ電鋳装
置、同じ原盤ホールダー、同じ電鋳液、同じ液温度、同
じ電流密度で同じように電鋳した。実験例1と同じよう
に反りを測定すると、ガラス面が凸になる方向でお椀形
状に最大115μm反っていた。電鋳液の温度と同じ4
5℃の加温機構にスタンパー付き原盤を入れて、45℃
の環境下で反りを測定すると最大35μmであった。電
鋳膜の厚さは中央部で230±5μm、外周部で290
±10μmであった。室温のままで電鋳膜裏面の研磨を
行なったところ、研磨後の膜厚は中央部で170μm、
外周部を230μmで電鋳膜の厚さを均一にすることは
できなかった。Comparative Example 1 The same electroforming as in Experimental Example 1 was performed in the same manner with the same master, the same electroforming apparatus, the same holder of the same master, the same electroforming liquid, the same liquid temperature, and the same current density. When the warpage was measured in the same manner as in Experimental Example 1, the bowl shape was warped at a maximum of 115 μm in the direction in which the glass surface was convex. Same as the temperature of electroforming liquid 4
Put the master with stamper into the heating mechanism of 5 ℃, 45 ℃
When the warp was measured under the environment, the maximum was 35 μm. The thickness of the electroformed film is 230 ± 5 μm in the central part and 290 in the outer peripheral part.
It was ± 10 μm. When the back surface of the electroformed film was polished at room temperature, the film thickness after polishing was 170 μm at the center,
It was not possible to make the thickness of the electroformed film uniform with the outer peripheral portion of 230 μm.
【0023】[0023]
【発明の効果】本発明は、スタンパー付き原盤を反り量
が一定以下になる温度環境下で研磨を行なうことによっ
て、スタンパー付き原盤の反り量を小さくして厚さが均
一なスタンパーを容易に得られるという効果がある。さ
らに電鋳時の液温度の使用範囲を広くできるという効果
もある。According to the present invention, the stamper master is polished in a temperature environment in which the warp amount is not more than a certain value, whereby the warp amount of the stamper master is reduced to easily obtain a stamper having a uniform thickness. There is an effect that is. Further, there is an effect that the use range of the liquid temperature during electroforming can be widened.
【図1】本発明のスタンパーの製造方法の一実施例を示
す概略工程図である。FIG. 1 is a schematic process drawing showing an embodiment of a stamper manufacturing method of the present invention.
【図2】本実施例に使用される環境温度を調製する手段
の一例を示す模式図である。FIG. 2 is a schematic diagram showing an example of a means for adjusting the environmental temperature used in this example.
【図3】従来の技術を示す説明図である。FIG. 3 is an explanatory diagram showing a conventional technique.
1 スタンパー付き原盤 2 研磨装置 3 ガラス原盤 4 電鋳膜 5 加温機構 7 導電化膜 10 樹脂膜 11 基板 1 Master with stamper 2 Polishing equipment 3 glass master 4 Electroformed film 5 Heating mechanism 7 Conductive film 10 Resin film 11 board
───────────────────────────────────────────────────── フロントページの続き (72)発明者 上高原 弘文 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (72)発明者 甲斐 丘 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (72)発明者 鹿目 修 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 (72)発明者 串田 直樹 東京都大田区下丸子3丁目30番2号 キヤ ノン株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hirofumi Kamikohara 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Kai Hill 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Osamu Kaname 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Naoki Kushida 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation
Claims (2)
が形成されたスタンパー付き原盤に、電鋳を行なう電鋳
工程および研磨を行なう研磨工程を有するスタンパーの
製造方法において、前記スタンパー付き原盤を反り量が
一定以下になる温度環境下で前記研磨工程を行なうこと
を特徴とするスタンパーの製造方法。1. A method of manufacturing a stamper, comprising: an electroforming step for performing electroforming and a polishing step for performing polishing on a stamper-based master having an uneven pattern corresponding to information to be recorded. A method for manufacturing a stamper, which comprises performing the polishing step in a temperature environment in which the amount is not more than a certain value.
が形成されたスタンパー付き原盤に、電鋳を行なう電鋳
工程および研磨を行なう研磨工程を有するスタンパーの
製造方法において、前記スタンパー付き原盤を反り量が
一定以下になるように、環境温度を調整しながら前記研
磨工程を行なうことを特徴とするスタンパーの製造方
法。2. A stamper manufacturing method, comprising: an electroforming step of electroforming and a polishing step of polishing a stamper master having an uneven pattern corresponding to information to be recorded, wherein the stamper master is warped. A method for manufacturing a stamper, which comprises performing the polishing step while adjusting the environmental temperature so that the amount becomes equal to or less than a certain value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15704391A JPH052780A (en) | 1991-06-27 | 1991-06-27 | Stamper manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15704391A JPH052780A (en) | 1991-06-27 | 1991-06-27 | Stamper manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH052780A true JPH052780A (en) | 1993-01-08 |
Family
ID=15640949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15704391A Pending JPH052780A (en) | 1991-06-27 | 1991-06-27 | Stamper manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH052780A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013015750A1 (en) * | 2011-07-25 | 2013-01-31 | Hoya Glass Disk (Thailand) Ltd | A method of manufacturing glass substrates for information recording medium |
-
1991
- 1991-06-27 JP JP15704391A patent/JPH052780A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013015750A1 (en) * | 2011-07-25 | 2013-01-31 | Hoya Glass Disk (Thailand) Ltd | A method of manufacturing glass substrates for information recording medium |
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