JPH05286567A - クリーンルーム用密閉式コンテナ - Google Patents

クリーンルーム用密閉式コンテナ

Info

Publication number
JPH05286567A
JPH05286567A JP8441192A JP8441192A JPH05286567A JP H05286567 A JPH05286567 A JP H05286567A JP 8441192 A JP8441192 A JP 8441192A JP 8441192 A JP8441192 A JP 8441192A JP H05286567 A JPH05286567 A JP H05286567A
Authority
JP
Japan
Prior art keywords
gas
container
inert gas
passage hole
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8441192A
Other languages
English (en)
Other versions
JP3191392B2 (ja
Inventor
Teppei Yamashita
哲平 山下
Masanao Murata
正直 村田
Miki Tanaka
幹 田中
Akiya Morita
日也 森田
Hitoshi Kono
等 河野
Atsushi Okuno
敦 奥野
Masanori Tsuda
正徳 津田
Michihiro Hayashi
満弘 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Co Ltd
Original Assignee
Shinko Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Co Ltd filed Critical Shinko Electric Co Ltd
Priority to JP8441192A priority Critical patent/JP3191392B2/ja
Priority to KR1019930004904A priority patent/KR100273842B1/ko
Priority to DE69304385T priority patent/DE69304385T2/de
Priority to EP93105522A priority patent/EP0565001B1/en
Priority to US08/042,644 priority patent/US5320218A/en
Publication of JPH05286567A publication Critical patent/JPH05286567A/ja
Application granted granted Critical
Publication of JP3191392B2 publication Critical patent/JP3191392B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1924—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control
    • H10P72/1926—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packages (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

(57)【要約】 【目的】 ガス補給のために不活性ガスパージステーシ
ョンまで移動させなくても済み、システムの負担を軽減
することができる半導体製造システムにおいて用いられ
クリーンルーム用密閉式コンテナを提供することを目的
とする。 【構成】 ウエハを収納し内部を不活性ガス雰囲気にし
て半導体等製造システムの装置から装置へ搬送される密
閉式コンテナ１０において、当該コンテナは、一端が内
部に開口し他端が外部に開口するガス通路孔３１を有
し、このガス通路孔の上記他端部に、可搬式の不活性ガ
スボンベ２０が着脱可能に取付けられ、当該不活性ガス
ボンベはコンテナ漏れガス分補給用であることを特徴と
する。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体ウエハ、液晶表
示板、レチクルおよびディスク類を製造するシステムに
おいて用いられる密閉式のコンテナに関する。
【０００２】
【従来の技術】図３はこの種の半導体製造システムの１
例を示したもので、１は半導体ウエハの表面処理を行な
う表面処理炉を内蔵した表面処理装置であり、後述する
ポートを２つ並列に備えている。２はウエハ検査装置、
３は自走式の移載ロボット、４はウエハ保管庫、４Ａは
ウエハ保管庫４のエプロン、５はウエハ洗浄装置、６は
リニアモータ式の搬送装置である。
【０００３】図４は上記表面処理装置１の一部を断面で
示したものである。この図において、１０は密閉式のコ
ンテナ（ポッド）であって、その開口１１はシール１２
を介在して蓋１３で密閉されている。この蓋１３は図示
しないが自動施錠機構を内蔵しており、当該自動施錠機
構の進退駆動されるロッド１４の端部がコンテナ１０の
開口１１に係合する。１５はウエハカセットであって、
複数枚例えば２５枚の半導体ウエハＷを段々に収納して
おり、コンテナ１０に収容されて搬送される。図９はウ
エハカセット１５を収容したコンテナ１０が表面処理装
置１の上記したポート（カセット搬入搬出部）１６Ａを
構成するプレート１６上へ載置された状態を示してお
り、レバー式ロック機構１７によりプレート１６上に固
定されており、プレート１６上に固定されると、蓋１３
の自動施錠機構は解錠される。１８Ａは昇降装置１８の
昇降台であり、ウエハカセット１５は蓋１３とともにこ
の昇降台１８Ａへ移載されて下降し、図示しない搬送装
置によりウエハカセット１５だけが図示しない表面処理
炉へ運ばれる。半導体ウエハの表面処理が終了すると、
ウエハカセット１５は昇降台１８Ａに載っている蓋１３
上へ搬送され、昇降台１８Ａが上昇して当該ウエハカセ
ット１５をコンテナ１０内へ搬入する。コンテナ１０で
は、蓋１３を施錠して密閉する。密閉されたコンテナ１
０は移載ロボット３によりウエハ保管庫４のエプロン４
Ａからへ搬送され、ウエハ保管庫４へ搬入されたコンテ
ナ１０はスタッカークレーン７により、図示しない中央
制御装置から指定された棚の所定のポジションに搬入さ
れる。
【０００４】半導体ウエハ等は塵埃の付着を嫌うので、
半導体製造プロセスは、清浄雰囲気にしたクリーンルー
ム内で実行され、従来は、ウエハカセット１５を裸のま
まで、装置から装置へ搬送していたが、半導体回路の高
集積化が進むに伴い、上記のようにウエハカセット１５
を密閉式コンテナ１０に収容して装置から装置へ搬送す
るようになり、更に、密閉式コンテナ１０内および表面
処理装置１等の装置内を不活性雰囲気にして、半導体ウ
エハの自然酸化膜の成長を抑制するまでになった。
【０００５】
【発明が解決しようとする課題】このコンテナは、密閉
式ではあるが、不活性ガス、例えばＮ2 ガスを封入した
のち長い期間そのままにしておくと、除々にガスが漏れ
出てコンテナ内のＮ2 ガス濃度が低下してしまう。
【０００６】このため、高純度Ｎ2 ガス雰囲気が要求さ
れる場合や長く保管庫に入れておくコンテナはガス補給
のために所定時間経過毎にＮ2 ガスパージステーション
まで搬送してガスパージするようにしており、この作業
がシステムの動きを複雑にしている。
【０００７】本発明はこの問題を解消するためになされ
たもので、着脱可能なガス補給源を一体に備え、ガス補
給のためにＮ2 ガスパージステーションまで移動させな
くても済むクリーンルーム用密閉式コンテナを提供する
ことを目的とする。
【０００８】
【課題を解決するための手段】本発明は上記目的を達成
するため、ウエハを収納し内部を不活性ガス雰囲気にし
て半導体製造システムの装置から装置へ搬送される密閉
式コンテナにおいて、当該コンテナは、一端が内部に開
口し他端が外部に開口するガス通路孔を有し、このガス
通路孔の上記他端部に、コンテナ漏れガス分補給用に可
搬式の不活性ガスボンベを着脱可能に取付けたものであ
る。
【０００９】
【作用】本発明では、コンテナ１０のガス漏れが進み、
その内圧が所定レベルに低下すると、自動的にＮ2 ガス
ボンベ２０が漏れガス分の補給を行なう。
【００１０】
【実施例】以下、本発明の１実施例を図面を参照して説
明する。
【００１１】図１において、２０はガス補給源となる可
搬タイプの小型のＮ2 ガスボンベである。コンテナ１０
には、そのフランジ１０Ａの上面に一端３１Ａが開口
し、他端３１Ｂが内側面に開口する小径のガス通路孔３
１が形成され、ガス通路孔３１の上記他端３１Ｂが開口
する部分にはフィルタ３２が設けられている。
【００１２】Ｎ2 ガスボンベ２０のノズル部２１には減
圧弁２２が取りつけられ、減圧弁２２から突出する給ガ
ス管部２３が図２に示すようにガス通路孔３１の上記一
端３１Ａに螺入されている。３３はバネ３４で付勢され
た調整弁である。
【００１３】この構成において、密閉式のコンテナ１０
は図示しないＮ2 ガスパージステーション等でガスパー
ジされ、Ｎ2 ガスを封入して大気圧より若干高い圧力ま
で与え圧されている。
【００１４】コンテナ１０が、前記した図３のウエハ保
管庫４の棚に載置され、載置されたまま時間が経過する
と前記したガス漏れが進む。コンテナ１０のガス漏れが
進み、そのガス圧が、例えば大気圧まで下がると、弁３
３がばね３４の付勢力に抗して押し下げられて、給ガス
管部２３の開口２３Ａから離間し、Ｎ2 ガスボンベ２０
のＮ2 ガスが減圧弁２２で大気圧より高い与圧レベルま
で減圧されてガス通路孔３１へ噴出する。ガス通路孔３
１へ噴出したＮ2 ガスは当該ガス通路孔３１の他端３１
Ｂからコンテナ１０内へ流れ込み、コンテナ１０内のＮ
2 ガス濃度を上昇する。
【００１５】このように、本実施例では、コンテナ１０
のガス漏れが進み、その内圧が所定レベルに低下する
と、自動的にＮ2 ガスボンベ２０が漏れガス分の補給を
行なうので、コンテナ１０を定期的にＮ2 ガスパージス
テーションへ搬送してＮ2 ガスする手間を省くことがで
きる。
【００１６】
【発明の効果】本発明は以上説明した通り、漏れガス分
補給用の不活性ガスボンベをコンテナに搭載してあるの
で、コンテナ内のガス濃度は常に自動的に高純度に維持
され、パージステーションへ運んでガス補給する必要が
ないから、その分、システム内の負担を軽減することが
できる。
【図面の簡単な説明】
【図１】本発明の実施例を示す断面図である。
【図２】上記実施例における要部の拡大断面図である。
【図３】半導体製造システムの１例を示す図である。
【図４】上記半導体製造システムにおける表面処理装置
の部分断面図である。
【符号の説明】
１ 表面処理装置 １０ コンテナ １３ コンテナの蓋 １５ ウエハカセット ２０ Ｎ2 ガスボンベ ２２ 減圧弁 ３１ ガス通路孔 ３２ フィルタ ３３ 調整弁
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｈ０１Ｌ 21/02 Ｄ (72)発明者 森田 日也 三重県伊勢市竹ケ鼻町100番地 神鋼電機 株式会社伊勢製作所内 (72)発明者 河野 等 三重県伊勢市竹ケ鼻町100番地 神鋼電機 株式会社伊勢製作所内 (72)発明者 奥野 敦 三重県伊勢市竹ケ鼻町100番地 神鋼電機 株式会社伊勢製作所内 (72)発明者 津田 正徳 三重県伊勢市竹ケ鼻町100番地 神鋼電機 株式会社伊勢製作所内 (72)発明者 林 満弘 三重県伊勢市竹ケ鼻町100番地 神鋼電機 株式会社伊勢製作所内

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 ウエハを収納し内部を不活性ガス雰囲気
    にして半導体等製造システムの装置から装置へ搬送され
    る密閉式コンテナにおいて、当該コンテナは、一端が内
    部に開口し他端が外部に開口するガス通路孔を有し、こ
    のガス通路孔の上記他端部に、可搬式の不活性ガスボン
    ベが着脱可能に取付けられ、当該不活性ガスボンベはコ
    ンテナ漏れガス分補給用であることを特徴とするクリー
    ンルーム用密閉式コンテナ。
JP8441192A 1992-04-07 1992-04-07 クリーンルーム用密閉式コンテナ Expired - Fee Related JP3191392B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8441192A JP3191392B2 (ja) 1992-04-07 1992-04-07 クリーンルーム用密閉式コンテナ
KR1019930004904A KR100273842B1 (ko) 1992-04-07 1993-03-29 클린룸용 밀폐식 컨테이너
DE69304385T DE69304385T2 (de) 1992-04-07 1993-04-02 Geschlossener Behälter für Gebrauch in einem Reinraum
EP93105522A EP0565001B1 (en) 1992-04-07 1993-04-02 Closed container to be used in a clean room
US08/042,644 US5320218A (en) 1992-04-07 1993-04-05 Closed container to be used in a clean room

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8441192A JP3191392B2 (ja) 1992-04-07 1992-04-07 クリーンルーム用密閉式コンテナ

Publications (2)

Publication Number Publication Date
JPH05286567A true JPH05286567A (ja) 1993-11-02
JP3191392B2 JP3191392B2 (ja) 2001-07-23

Family

ID=13829852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8441192A Expired - Fee Related JP3191392B2 (ja) 1992-04-07 1992-04-07 クリーンルーム用密閉式コンテナ

Country Status (5)

Country Link
US (1) US5320218A (ja)
EP (1) EP0565001B1 (ja)
JP (1) JP3191392B2 (ja)
KR (1) KR100273842B1 (ja)
DE (1) DE69304385T2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798455A (en) * 1995-06-13 1998-08-25 Takasago Thermal Engineering Co., Ltd. Storehouse for use in storage of clean materials
JP2010503990A (ja) * 2006-09-14 2010-02-04 ブルックス オートメーション インコーポレイテッド キャリアガスシステムおよび基板キャリアのロードポートとの連結
JP2014157190A (ja) * 2013-02-14 2014-08-28 Toshiba Corp 基板収納容器及び露光装置
JP2016509754A (ja) * 2013-01-22 2016-03-31 ブルックス オートメーション インコーポレイテッド 基板搬送部

Families Citing this family (373)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160242A (ja) * 1991-12-02 1993-06-25 Tadahiro Omi 高清浄試料運搬装置及び試料運搬方法
GB9419765D0 (en) * 1994-09-30 1994-11-16 Symons Richard D Storage of sensitive media
KR0167881B1 (ko) * 1994-11-28 1999-02-01 김주용 웨이퍼 반송 시스템 및 그 제어방법
US5561915A (en) * 1995-07-12 1996-10-08 Vandergriff; Johnie B. Storage container with sealed storage compartment for a purging gas cartridge
US6239038B1 (en) 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5628121A (en) * 1995-12-01 1997-05-13 Convey, Inc. Method and apparatus for maintaining sensitive articles in a contaminant-free environment
US5810031A (en) * 1996-02-21 1998-09-22 Aeroquip Corporation Ultra high purity gas distribution component with integral valved coupling and methods for its use
FR2747112B1 (fr) * 1996-04-03 1998-05-07 Commissariat Energie Atomique Dispositif de transport d'objets plats et procede de transfert de ces objets entre ledit dispositif et une machine de traitement
US5879458A (en) 1996-09-13 1999-03-09 Semifab Incorporated Molecular contamination control system
USD412513S (en) * 1997-01-29 1999-08-03 Tokyo Electron Limited Upper electrode for manufacturing semiconductors
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD404015S (en) 1997-01-31 1999-01-12 Tokyo Electron Ltd. Wafer boat for use in a semiconductor wafer heat processing apparatus
USD405429S (en) 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD405430S (en) 1997-01-31 1999-02-09 Tokyo Electron Limited Inner tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD407696S (en) 1997-08-20 1999-04-06 Tokyo Electron Limited Inner tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD404369S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Manifold cover for use in a semiconductor wafer heat processing apparatus
USD404375S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Heat retaining tube base for use in a semiconductor wafer head processing apparatus
USD404371S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Wafer boat for use in a semiconductor wafer heat processing apparatus
USD404370S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Cap for use in a semiconductor wafer heat processing apparatus
USD409158S (en) * 1997-08-20 1999-05-04 Tokyo Electron Limited Wafer boat for use in a semiconductor wafer heat processing apparatus
USD404372S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Ring for use in a semiconductor wafer heat processing apparatus
USD404373S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Fin for use in a semiconductor wafer heat processing apparatus
USD404374S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Fin for use in a semiconductor wafer heat processing apparatus
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DE69304385D1 (de) 1996-10-10
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