JPH05295518A - Method for producing insulating material coated with alumina film - Google Patents

Method for producing insulating material coated with alumina film

Info

Publication number
JPH05295518A
JPH05295518A JP12289892A JP12289892A JPH05295518A JP H05295518 A JPH05295518 A JP H05295518A JP 12289892 A JP12289892 A JP 12289892A JP 12289892 A JP12289892 A JP 12289892A JP H05295518 A JPH05295518 A JP H05295518A
Authority
JP
Japan
Prior art keywords
pinholes
film
insulating material
alumina film
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP12289892A
Other languages
Japanese (ja)
Inventor
Naoto Ono
直人 小野
Yusuke Oikawa
雄介 及川
Tsunetoshi Takahashi
常利 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP12289892A priority Critical patent/JPH05295518A/en
Publication of JPH05295518A publication Critical patent/JPH05295518A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To reduce insulation defects such as pinholes and to enhance insulating property. CONSTITUTION:Stainless steel is coated with an alumina film and heat-treated at >=600 deg.C in a nonoxidizing atmosphere of Ar, N2, etc. The number of pinholes can be reduced to <=1/10 and >=1MOMEGA electric resistance can be obtd. in the case of >=80% of production.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は金属基板上にドライコー
ティング法によりアルミナ膜を形成した電気絶縁材料の
製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an electrically insulating material in which an alumina film is formed on a metal substrate by a dry coating method.

【0002】[0002]

【従来の技術】電気絶縁性板状材料は、IC基板、セン
サー基板、太陽電池基板、電極基板等に使用され電子・
電気産業に欠かせない材料になっている。
2. Description of the Related Art Electrically insulating plate-shaped materials are used in electronic substrates such as IC substrates, sensor substrates, solar cell substrates, and electrode substrates.
It has become an indispensable material for the electric industry.

【0003】この絶縁材料には、従来セラミックス材
料、ガラス材料、有機系材料等が用いられているが、セ
ラミックス・ガラス材料は強度および加工性が劣るとい
う欠点、有機系材料はガス放出性および耐熱性が劣ると
いう欠点を持っている。
Ceramic materials, glass materials, organic materials, etc. have been conventionally used for this insulating material. However, ceramic / glass materials have the drawback of poor strength and workability, and organic materials have gas releasing and heat resistance properties. It has the drawback of being inferior in sex.

【0004】絶縁材料としては、ドライコーティング法
を用いて金属基板上にセラミック薄膜をコーティングす
ることによって、電気絶縁性を付与した金属材料があ
る。
As the insulating material, there is a metal material which is provided with an electric insulating property by coating a ceramic thin film on a metal substrate using a dry coating method.

【0005】この金属基板としては、耐薬品性、強度等
の面からステンレス鋼板が用いられている。
As the metal substrate, a stainless steel plate is used in terms of chemical resistance and strength.

【0006】Al23の様な金属酸化物を基板上にドラ
イコーティングすると、特にスパッタリングによってコ
ーティングする場合には、絶縁膜にピンホール等の絶縁
欠陥を生じ易く、絶縁性が低下する原因となっている。
When a substrate is coated with a metal oxide such as Al 2 O 3 by dry coating, in particular, when coating is performed by sputtering, insulation defects such as pinholes are likely to occur in the insulating film, which causes a decrease in insulation. Has become.

【0007】ピンホール部分は局部的に絶縁膜が欠落し
ており、その大きさは数μm以下である。
The pinhole portion lacks an insulating film locally, and its size is several μm or less.

【0008】ピンホール部分を修復する方法として、コ
ーティング処理を2回以上繰り返すことによってピンホ
ールの残存個数を少なくする方法(いわゆる多層コーテ
ィング)がある。
As a method of repairing the pinhole portion, there is a method of reducing the number of remaining pinholes by repeating the coating treatment twice or more (so-called multilayer coating).

【0009】しかし、多層コーティングは、コーティン
グ処理を複数回繰り返すことであり、生産性を悪くする
等の欠点を有している。
[0009] However, the multi-layer coating has a drawback that productivity is deteriorated because the coating process is repeated a plurality of times.

【0010】尚、本発明におけるドライコーティング法
とは、プラズマを媒体として、真空中で薄膜を形成する
方法の総称であり、イオンプレーティング、スパッタリ
ング、プラズマ―CVD等である。
The dry coating method in the present invention is a general term for a method of forming a thin film in a vacuum using plasma as a medium, such as ion plating, sputtering and plasma-CVD.

【0011】[0011]

【発明が解決しようとする課題】本発明はステンレス鋼
板を基板とするアルミナ膜をコーティングした材料の製
造において、コーティング処理で発生したピンホール等
の絶縁欠陥を、コーティング処理に引き続いてピンホー
ル消失処理を行うことによって、絶縁欠陥の少ない絶縁
膜を1回のコーティング処理で生成し、絶縁性に優れた
絶縁材料の生産性を向上させることを目的とするもので
ある。
DISCLOSURE OF THE INVENTION In the present invention, in the production of a material coated with an alumina film using a stainless steel plate as a substrate, insulation defects such as pinholes generated in the coating process are eliminated after the coating process. By performing the above, it is intended to form an insulating film with a small number of insulating defects by a single coating process and improve the productivity of an insulating material having excellent insulating properties.

【0012】[0012]

【課題を解決するための手段】本発明の方法は、ステン
レス基板上にアルミナ膜をドライコーティングし、引き
続いて無酸化雰囲気中で600℃以上の温度で熱処理す
る。
According to the method of the present invention, an alumina film is dry-coated on a stainless steel substrate and subsequently heat-treated at a temperature of 600 ° C. or higher in a non-oxidizing atmosphere.

【0013】[0013]

【作用】本発明の基板はステンレス鋼を用いる。前記基
板の表面性状としては膜の絶縁性をより確実に確保する
ために、酸洗による粒界腐食や研削目などの凹凸の少な
い状態にしておくことが望ましい。
The substrate of the present invention uses stainless steel. As for the surface properties of the substrate, in order to ensure the insulating property of the film more reliably, it is desirable that there be little unevenness such as intergranular corrosion due to pickling and grinding marks.

【0014】該基板に、例えばAl23をターゲットに
してArでスパッタリングすることによって成膜処理す
ると、前述のようにピンホール等で絶縁膜が部分的に欠
落したコーティング膜が生成される。この膜はピンホー
ルのない膜に比較して絶縁性が劣る。
When a film is formed on the substrate by sputtering, for example, Al 2 O 3 as a target with Ar, a coating film in which the insulating film is partially missing due to a pinhole or the like is formed as described above. This film is inferior in insulating property to a film without pinholes.

【0015】本発明者等は絶縁性の向上対策について検
討した結果、無酸化性のガス雰囲気中で600℃以上の
温度で熱処理することによってピンホールが消失し、絶
縁性が向上することを見出した。
The inventors of the present invention have studied the measures for improving the insulating property, and found that heat treatment at a temperature of 600 ° C. or higher in a non-oxidizing gas atmosphere eliminates pinholes and improves the insulating property. It was

【0016】適正熱処理条件を求めるために、以下の実
験を行った。
The following experiments were carried out in order to determine the proper heat treatment conditions.

【0017】基板としてSUS430BAを用い、これ
にスパッタリングにより同一条件でアルミナ膜を形成し
た。膜厚は全て0.9μmである。これらの絶縁材料を
無酸化雰囲気として、Ar雰囲気中で熱処理した。
SUS430BA was used as a substrate, and an alumina film was formed on this by sputtering under the same conditions. All film thicknesses are 0.9 μm. These insulating materials were heat-treated in an Ar atmosphere as a non-oxidizing atmosphere.

【0018】ピンホールの個数は硫酸銅溶液中で、電解
メッキを行い、Cuの析出した個数を顕微鏡で数えた。
The number of pinholes was electrolytically plated in a copper sulfate solution, and the number of Cu deposited was counted with a microscope.

【0019】絶縁材料の抵抗値は、表面にアルミ(10
mm角×0.2μm)を電極として蒸着した後、電極上
にテスターの測定子を置き、50ヵ所の電気抵抗値を測
定した。
The resistance value of the insulating material is that aluminum (10
(mm square × 0.2 μm) was used as an electrode for vapor deposition, and then a tester stylus was placed on the electrode to measure the electric resistance value at 50 locations.

【0020】測定した内で1MΩ以上の電気抵抗値を示
す割合を合格率(%)とした。熱処理条件とピンホール
個数との関係を図1に示す。
The rate of showing an electric resistance value of 1 MΩ or more in the measurement was defined as the pass rate (%). The relationship between the heat treatment conditions and the number of pinholes is shown in FIG.

【0021】600℃以上の熱処理でピンホール個数が
減少し、コーティング処理ままに比較して1/10以下
にすることができる。図2に熱処理条件と合格率の関係
を示す。
The number of pinholes is reduced by the heat treatment at 600 ° C. or higher, and can be reduced to 1/10 or less as compared with the coating process. FIG. 2 shows the relationship between the heat treatment conditions and the acceptance rate.

【0022】非熱処理材や500℃以下の熱処理材は、
合格率が40%以下であるが、600℃以上から合格率
は上昇し、600℃×1hr熱処理した材料において
は、ピンホールが減少し、合格率は80%以上まで上昇
しており、ピンホール数の減少によって絶縁性が向上し
ていることが分かる。
Non-heat-treated materials and heat-treated materials at 500 ° C. or lower are
Although the pass rate is 40% or less, the pass rate increases from 600 ° C or higher, and in the material heat-treated at 600 ° C x 1 hr, pinholes decrease, and the pass rate increases to 80% or more. It can be seen that the insulating property is improved due to the decrease in the number.

【0023】以上の結果より、熱処理雰囲気は例えばA
r、N2等の無酸化雰囲気であれば良く、熱処理温度は
600℃以上であれば良い。
From the above results, the heat treatment atmosphere is, for example, A
A non-oxidizing atmosphere such as r or N 2 may be used, and the heat treatment temperature may be 600 ° C. or higher.

【0024】熱処理温度は、高くすれば拡散速度が大き
くなりピンホールを減少させる時間は短くなるため高温
で処理することが望ましいが、基板の耐熱性等を考慮し
て900℃以下が望ましい。
When the heat treatment temperature is increased, the diffusion rate is increased and the time for reducing the pinholes is shortened, so that it is desirable to perform the heat treatment at a high temperature, but it is preferably 900 ° C. or lower in consideration of heat resistance of the substrate.

【0025】[0025]

【実施例】基板とし、表面の平滑なSUS430BAと
SUS304BAを用いた。これにRFマグネトロンス
パッタリング装置を用い、Al23をターゲットとし
て、同一条件でアルミナ絶縁膜を形成した。
[Example] As the substrate, SUS430BA and SUS304BA having smooth surfaces were used. Using an RF magnetron sputtering device, an alumina insulating film was formed under the same conditions by using Al 2 O 3 as a target.

【0026】尚、コーティング条件は第1表に示す通り
で、膜厚は全て0.9μmである。この電気絶縁性材料
を無酸化雰囲気中で300〜800℃の温度で熱処理を
行った。
The coating conditions are as shown in Table 1 and the film thicknesses are all 0.9 μm. This electrically insulating material was heat-treated at a temperature of 300 to 800 ° C. in a non-oxidizing atmosphere.

【0027】第2表はこの材料の熱処理後のピンホール
数および電気抵抗値であり、600℃以上の熱処理温度
でピンホールが減少し、絶縁性が向上している。
Table 2 shows the number of pinholes and the electric resistance value after the heat treatment of this material. The number of pinholes is reduced and the insulation is improved at the heat treatment temperature of 600 ° C. or higher.

【0028】尚、酸素を含む大気雰囲気中で熱処理する
と、750℃以上ではピンホール部の基板酸化を生じて
合格率が低下した。
When heat-treated in an air atmosphere containing oxygen, the pass rate was lowered at 750 ° C. or higher due to substrate oxidation in the pinhole portion.

【0029】[0029]

【表1】 [Table 1]

【0030】[0030]

【表2】 [Table 2]

【0031】[0031]

【表3】 [Table 3]

【0032】[0032]

【表4】 [Table 4]

【0033】[0033]

【発明の効果】本発明によれば、成膜処理を行った後に
無酸化雰囲気中で600℃以上の熱処理を行うことによ
り、1回の成膜処理により電気絶縁性に優れる絶縁材料
を提供することができる。
According to the present invention, an insulating material having an excellent electrical insulating property can be provided by performing a film forming process once by performing a film forming process and then performing a heat treatment at 600 ° C. or more in a non-oxidizing atmosphere. be able to.

【図面の簡単な説明】[Brief description of drawings]

【図1】熱処理条件とピンホール数の関係を示す図。FIG. 1 is a diagram showing the relationship between heat treatment conditions and the number of pinholes.

【図2】熱処理条件と合格率の関係を示す図。FIG. 2 is a diagram showing a relationship between heat treatment conditions and a pass rate.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ステンレス基板上にアルミナ膜をドライ
コーティングし、引き続いて無酸化雰囲気中で600℃
以上の温度で熱処理することを特徴とするアルミナ膜を
コーティングした絶縁材料の製造方法。
1. A stainless steel substrate is dry-coated with an alumina film, and subsequently at 600 ° C. in a non-oxidizing atmosphere.
A method of manufacturing an insulating material coated with an alumina film, characterized by performing heat treatment at the above temperature.
JP12289892A 1992-04-17 1992-04-17 Method for producing insulating material coated with alumina film Withdrawn JPH05295518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12289892A JPH05295518A (en) 1992-04-17 1992-04-17 Method for producing insulating material coated with alumina film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12289892A JPH05295518A (en) 1992-04-17 1992-04-17 Method for producing insulating material coated with alumina film

Publications (1)

Publication Number Publication Date
JPH05295518A true JPH05295518A (en) 1993-11-09

Family

ID=14847353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12289892A Withdrawn JPH05295518A (en) 1992-04-17 1992-04-17 Method for producing insulating material coated with alumina film

Country Status (1)

Country Link
JP (1) JPH05295518A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196483A (en) * 2005-01-11 2006-07-27 Dainippon Printing Co Ltd Wiring board and manufacturing method thereof
TWI904136B (en) * 2020-02-21 2025-11-11 美商應用材料股份有限公司 Method of making high critical temperature metal nitride layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196483A (en) * 2005-01-11 2006-07-27 Dainippon Printing Co Ltd Wiring board and manufacturing method thereof
TWI904136B (en) * 2020-02-21 2025-11-11 美商應用材料股份有限公司 Method of making high critical temperature metal nitride layer

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990706