JPH05295577A - Method for cleaning substrate - Google Patents

Method for cleaning substrate

Info

Publication number
JPH05295577A
JPH05295577A JP10477492A JP10477492A JPH05295577A JP H05295577 A JPH05295577 A JP H05295577A JP 10477492 A JP10477492 A JP 10477492A JP 10477492 A JP10477492 A JP 10477492A JP H05295577 A JPH05295577 A JP H05295577A
Authority
JP
Japan
Prior art keywords
substrate
organic solvent
solvent
cleaning
vapor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10477492A
Other languages
Japanese (ja)
Other versions
JP2984141B2 (en
Inventor
Makoto Saito
誠 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP4104774A priority Critical patent/JP2984141B2/en
Publication of JPH05295577A publication Critical patent/JPH05295577A/en
Application granted granted Critical
Publication of JP2984141B2 publication Critical patent/JP2984141B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

PURPOSE:To clean a substrate at a low cost without having spotting on the surface by drying. CONSTITUTION:The contaminant on the surface of a substrate 4 is cleaned off as follows. (1) The contaminated substrate is dipped in an org. solvent 2, and the contaminant is washed away by the solvent 2 from the substrate 4. (2) The solvent 2 is heated to a temp. 1.5-10 deg.C lower than the b.p. to form a solvent vapor layer 3 on the solvent 2. (3) The substrate 4 in the solvent 2 is pulled up from the solvent 2 at the speed of 8.4 to 15.0mm/sec to volatilize the solvent on the substrate 4 into the solvent vapor layer 3.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、表面に薄膜形成技術に
より、薄い膜が被着される基体の洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a substrate on which a thin film is applied by a thin film forming technique.

【0002】[0002]

【従来技術】従来、複写機やプリンタ等に使用される電
子写真感光体は円筒状を成すアルミニウム製基体の表面
に例えばプラズマCVD法等の薄膜形成技術を採用し、
光導電層としてのアモルファスシリコン膜(以下、a−
Si膜と略記する)を被着することによって製作されて
いる。
2. Description of the Related Art Conventionally, an electrophotographic photosensitive member used in a copying machine, a printer or the like employs a thin film forming technique such as a plasma CVD method on the surface of a cylindrical aluminum base.
Amorphous silicon film (hereinafter a-
It is manufactured by depositing a Si film).

【0003】かかる電子写真感光体は基体表面に被着さ
れるa−Si膜の膜厚が極めて薄く、該a−Si膜の基
体表面に対する密着性、電気的特性等は基体の表面状態
に大きく左右されるため、通常、基体の外周面には鏡面
研摩等の平滑化処理を施した後、基体表面に付着してい
る油や加工屑等の汚れを有機溶剤等を用いて完全に洗浄
除去していた。
In such an electrophotographic photosensitive member, the film thickness of the a-Si film deposited on the surface of the substrate is extremely thin, and the adhesion of the a-Si film to the substrate surface, electrical characteristics, etc. are largely dependent on the surface condition of the substrate. Since it depends on the surface of the substrate, the outer peripheral surface of the substrate is usually subjected to smoothing treatment such as mirror polishing, and then dirt such as oil and processing debris adhering to the substrate surface is completely removed by washing with an organic solvent. Was.

【0004】尚、前記基体の洗浄は、まず洗浄槽内にC
2 Cl2 等の有機溶剤を注入するとともに該有機溶剤
中に基体を浸漬して基体表面に付着している加工屑や油
等の汚れを有機溶剤中に洗い出し、しかる後、前記基体
を有機溶剤から引き上げながら基体表面に付着している
有機溶剤を揮散させることにより行われている。
In order to clean the substrate, first, C in the cleaning tank.
By injecting an organic solvent such as H 2 Cl 2 and immersing the substrate in the organic solvent, the dirt such as processing scraps and oil adhering to the surface of the substrate is washed out in the organic solvent. It is carried out by volatilizing the organic solvent adhering to the surface of the substrate while pulling it up from the solvent.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、この従
来の基体の洗浄方法によれば、基体を有機溶剤から引き
上げる際、基体の表面に油等を含んだ有機溶剤が付着
し、これが乾燥しみとなって基体表面に残り、基体表面
にa−Si膜等の薄膜をプラズマCVD法等の薄膜形成
技術によって被着させた場合、a−Si膜に前記乾燥し
みに起因して成膜欠陥が発生したり、a−Si膜の電気
的特性が全体として不均一なものとなったりするという
欠点を有していた。
However, according to this conventional method of cleaning a substrate, when the substrate is pulled up from the organic solvent, the organic solvent containing oil or the like adheres to the surface of the substrate, which becomes a dry stain. Remains on the surface of the substrate and a thin film such as an a-Si film is deposited on the surface of the substrate by a thin film forming technique such as plasma CVD, a film-forming defect occurs on the a-Si film due to the dry stain. Alternatively, the a-Si film has a drawback that the electrical characteristics of the film are not uniform as a whole.

【0006】そこで上記欠点を解消するために、洗浄槽
内の有機溶剤上にフリーボード(蒸気発生器等により形
成される溶剤蒸気の層)を設けるとともに、該フリーボ
ード内において基体表面に付着している油等を含んだ有
機溶剤を揮散させ、これによって基体表面に乾燥しみが
発生するのを有効に防止した方法が知られている。
Therefore, in order to solve the above-mentioned drawbacks, a freeboard (a layer of solvent vapor formed by a steam generator or the like) is provided on the organic solvent in the cleaning tank, and the freeboard adheres to the substrate surface in the freeboard. A method is known in which an organic solvent containing oil or the like is volatilized to effectively prevent the occurrence of dry stains on the surface of the substrate.

【0007】しかしながら上記洗浄方法においては、フ
リーボードを設けるために洗浄装置に別途、蒸気発生器
を組み込まなければならず、洗浄装置を高価とするとと
もに全体構造を複雑なものとしてしまい、同時に蒸気発
生器の使用に伴って極めて多量の有機溶剤を必要とする
欠点を有していた。
However, in the above cleaning method, a steam generator must be separately incorporated in the cleaning device in order to provide a freeboard, which makes the cleaning device expensive and makes the entire structure complicated, and at the same time generates steam. It has the drawback of requiring a very large amount of organic solvent with the use of a vessel.

【0008】[0008]

【発明の目的】本発明は上記欠点に鑑みて案出されたも
のであり、その目的は、低コストで、かつ基体表面に乾
燥しみを発生させることのない基体の洗浄方法を提供す
ることにある。
SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a method for cleaning a substrate which is low in cost and which does not cause drying stains on the surface of the substrate. is there.

【0009】[0009]

【問題点を解決するための手段】本発明の基体の洗浄方
法は、基体表面に付着している汚れを下記(1)乃至
(3)の工程により洗浄することを特徴とする。
The method of cleaning a substrate according to the present invention is characterized in that dirt adhering to the surface of the substrate is cleaned by the following steps (1) to (3).

【0010】(1)有機溶剤中に汚れの付着している基
体を浸漬し、有機溶剤によって汚れを基体より洗い流す
工程。
(1) A step of immersing a substrate having stains in an organic solvent and washing the stains from the substrate with the organic solvent.

【0011】(2)有機溶剤を沸点より1.5〜10℃
低い温度に加熱して、有機溶剤上に溶剤蒸気層を形成す
る工程。
(2) The organic solvent is added at a boiling point of 1.5 to 10 ° C.
Heating to a low temperature to form a solvent vapor layer on the organic solvent.

【0012】(3)有機溶剤中に浸漬した基体を8.4
乃至15.0mm/secの速さで有機溶剤より引き上
げ基体表面に付着する有機溶剤を溶剤蒸気層内で揮散さ
せる工程。
(3) The substrate immersed in the organic solvent is 8.4.
To a rate of 15.0 mm / sec, and a step of evaporating the organic solvent attached to the surface of the substrate from the organic solvent in the solvent vapor layer.

【0013】[0013]

【実施例】以下、本発明の実施例を、電子写真感光体に
使用される円筒状基体を洗浄する場合を例にとって説明
する。
EXAMPLES Examples of the present invention will be described below by taking the case of cleaning a cylindrical substrate used for an electrophotographic photoreceptor as an example.

【0014】図1は本発明の洗浄方法を実施するのに使
用される洗浄装置の概略図であり、1は洗浄槽、2は有
機溶剤、3は溶剤蒸気層、4は円筒状基体、5は超音波
振動子、6はヒータ、7は凝縮管である。
FIG. 1 is a schematic view of a cleaning apparatus used for carrying out the cleaning method of the present invention. 1 is a cleaning tank, 2 is an organic solvent, 3 is a solvent vapor layer, 4 is a cylindrical substrate, 5 Is an ultrasonic oscillator, 6 is a heater, and 7 is a condenser tube.

【0015】前記洗浄槽1はステンレス等から成ってお
り、その内部にはジクロロメタン(CH2 Cl2 )やト
リクロロエタン(CCl3 CH3 )等の有機溶剤2が注
入される。
The cleaning tank 1 is made of stainless steel or the like, and an organic solvent 2 such as dichloromethane (CH 2 Cl 2 ) or trichloroethane (CCl 3 CH 3 ) is injected into the cleaning tank 1.

【0016】前記有機溶剤2は円筒状基体4表面に付着
される油や加工屑等の汚れを洗い出し、円筒状基体4表
面を、a−Si膜等が被着されるのに適した状態とする
作用を為す。
The organic solvent 2 is used to wash away dirt such as oil and processing dust attached to the surface of the cylindrical substrate 4, and the surface of the cylindrical substrate 4 is put in a state suitable for depositing an a-Si film or the like. Make the action.

【0017】また前記有機溶剤2が注入される洗浄槽1
の内壁面には超音波振動子5が、また底面にはヒータ6
がそれぞれ不図示の駆動回路に接続されて埋め込まれて
いる。
A cleaning tank 1 into which the organic solvent 2 is injected
An ultrasonic transducer 5 is provided on the inner wall surface and a heater 6 is provided on the bottom surface.
Are connected to and embedded in drive circuits (not shown).

【0018】前記超音波振動子5は、駆動回路の駆動に
伴って電力が印加されると、洗浄槽1内に注入される有
機溶剤2中で所定振動数の超音波を発しながら振動し、
これにより有機溶剤2の洗浄効果を高いものと成す。
When electric power is applied to the ultrasonic oscillator 5 as the drive circuit is driven, the ultrasonic oscillator 5 vibrates while emitting ultrasonic waves of a predetermined frequency in the organic solvent 2 injected into the cleaning tank 1,
As a result, the cleaning effect of the organic solvent 2 is enhanced.

【0019】一方、前記ヒータ6は駆動回路の駆動に伴
って電力が印加されるとジュール発熱を起こして洗浄槽
1内の有機溶剤2を沸点より1.5〜10℃低い温度に
まで加熱し、有機溶剤2の一部を気化させて有機溶剤2
の上部に該有機溶剤2と同一有機物の蒸気から成る厚み
の厚い溶剤蒸気層3を発生させる。
On the other hand, the heater 6 generates Joule heat when electric power is applied as the drive circuit is driven, and heats the organic solvent 2 in the cleaning tank 1 to a temperature 1.5 to 10 ° C. lower than the boiling point. , Part of the organic solvent 2 is vaporized and the organic solvent 2
A thick solvent vapor layer 3 composed of the same organic substance vapor as the organic solvent 2 is generated on the upper part of.

【0020】前記溶剤蒸気層3は、円筒状基体4を有機
溶剤2より所定速さで引き上げる際、該溶剤蒸気層3を
形成する有機物の蒸気に円筒状基体4を晒しながらその
表面に付着した有機溶剤2をむら無く揮散乾燥させ、こ
れによって円筒状基体4表面に乾燥しみが発生すること
を有効に防止する。
When the cylindrical substrate 4 is pulled up from the organic solvent 2 at a predetermined speed, the solvent vapor layer 3 adheres to the surface of the cylindrical substrate 4 while exposing the cylindrical substrate 4 to the vapor of the organic substance forming the solvent vapor layer 3. The organic solvent 2 thus formed is uniformly vaporized and dried, which effectively prevents the generation of dry stains on the surface of the cylindrical substrate 4.

【0021】尚、前記有機溶剤2の液温が前述した加熱
温度の範囲よりも高くなると、有機溶剤2と溶剤蒸気層
3の温度がほぼ等しくなることに起因して蒸気の凝縮が
発生するとともに充分な洗浄効果が得られなくなってし
まい、また前述した加熱温度の範囲よりも低くなると、
有機溶剤2の上部に充分な厚みをもった溶剤蒸気層3を
発生させることができなくなる。従って、有機溶剤2の
液温は沸点より1.5〜10℃低い温度にまで加熱して
おく必要がある。
When the liquid temperature of the organic solvent 2 becomes higher than the above-mentioned heating temperature range, vapor condensation occurs due to the temperatures of the organic solvent 2 and the solvent vapor layer 3 becoming substantially equal. If a sufficient cleaning effect cannot be obtained, and if it falls below the above-mentioned heating temperature range,
The solvent vapor layer 3 having a sufficient thickness cannot be generated above the organic solvent 2. Therefore, it is necessary to heat the liquid temperature of the organic solvent 2 to a temperature lower than the boiling point by 1.5 to 10 ° C.

【0022】また前記円筒状基体4としては、例えばア
ルミニウムやガラス等から成る円筒体の外周面に対し鏡
面研摩等の平滑化処理を施したものが好適に使用され
る。
As the cylindrical substrate 4, a cylindrical body made of, for example, aluminum or glass, which has been subjected to smoothing treatment such as mirror polishing on the outer peripheral surface, is preferably used.

【0023】更に、前記洗浄槽1の上部内壁には凝縮管
7が配されており、該凝縮管7は前記溶剤蒸気層3を形
成する有機物の蒸気を冷却液化することにより該蒸気が
洗浄槽1外部に漏洩することを防止する作用を為す。
Further, a condensing pipe 7 is arranged on the inner wall of the upper portion of the cleaning tank 1, and the condensing pipe 7 cools and liquefies the vapor of the organic substance forming the solvent vapor layer 3 so that the vapor is washed. 1 It works to prevent leakage to the outside.

【0024】次に上記洗浄装置を用いた円筒状基体4の
洗浄方法について説明する。
Next, a method of cleaning the cylindrical substrate 4 using the above cleaning device will be described.

【0025】先ず、前記洗浄槽1内にジクロロメタンや
トリクロロエタン等の有機溶剤2を注入するとともに、
該有機溶剤2中に円筒状基体4を浸漬する。
First, while injecting an organic solvent 2 such as dichloromethane or trichloroethane into the cleaning tank 1,
The cylindrical substrate 4 is immersed in the organic solvent 2.

【0026】次に前記有機溶剤2をヒータ6によって沸
点より1.5〜10℃低い温度に加熱し、有機溶剤2の
液面上部に該有機溶剤2と同一有機物の蒸気から成る厚
みの厚い溶剤蒸気層3を形成させる。
Next, the organic solvent 2 is heated by a heater 6 to a temperature lower than the boiling point by 1.5 to 10 ° C., and a thick solvent composed of the same organic vapor as the organic solvent 2 is formed on the liquid surface of the organic solvent 2. The vapor layer 3 is formed.

【0027】次に前記洗浄槽1の内壁面に埋め込まれた
超音波振動子5を、例えば28kHzの振動数で約2分
間振動させ、円筒状基体4表面に付着している油等の汚
れを有機溶剤2中に洗い出し洗浄をする。
Next, the ultrasonic vibrator 5 embedded in the inner wall surface of the cleaning tank 1 is vibrated at a frequency of 28 kHz for about 2 minutes to remove dirt such as oil adhering to the surface of the cylindrical substrate 4. Wash out and wash in organic solvent 2.

【0028】次に円筒状基体4をその外周面が有機溶剤
2の液面に対し垂直な面を成すようにして有機溶剤2よ
り8.4乃至15.0mm/secの速さで引き上げ
る。
Next, the cylindrical substrate 4 is pulled up from the organic solvent 2 at a speed of 8.4 to 15.0 mm / sec so that its outer peripheral surface forms a plane perpendicular to the liquid surface of the organic solvent 2.

【0029】この場合、有機溶剤2の液面上部にはヒー
タ6の加熱により有機溶剤2と同一有機物の蒸気から成
る厚みの厚い溶剤蒸気層3が形成されているため、有機
溶剤2より引き上げられた円筒状基体4は溶剤蒸気層3
中に長時間晒されるので円筒状基体4の表面に油等を含
んだ有機溶剤2が付着しているとしても該付着する有機
溶剤2は溶剤蒸気層3内においてむら無く乾燥され、そ
の結果、円筒状基体4の外周面に乾燥しみを発生させる
ことは皆無となる。従って、この円筒状基体4の外周面
にa−Si膜をプラズマCVD法等によって所定厚みに
被着させ電子写真感光体を製作した場合、円筒状基体4
の外周面には乾燥しみが無いことからその表面に成膜欠
陥がほとんど無く、電気的特性も全体がほぼ均一なa−
Si膜を被着させることが可能となる。
In this case, since a thick solvent vapor layer 3 made of the same organic substance vapor as the organic solvent 2 is formed by the heating of the heater 6 above the liquid surface of the organic solvent 2, it is lifted from the organic solvent 2. The cylindrical substrate 4 is a solvent vapor layer 3
Since it is exposed to the inside for a long time, even if the organic solvent 2 containing oil or the like adheres to the surface of the cylindrical substrate 4, the adhering organic solvent 2 is evenly dried in the solvent vapor layer 3, and as a result, No dry spot is generated on the outer peripheral surface of the cylindrical substrate 4. Therefore, when an electrophotographic photosensitive member is manufactured by depositing an a-Si film on the outer peripheral surface of the cylindrical substrate 4 by a plasma CVD method or the like, the cylindrical substrate 4
Since there are no dry spots on the outer peripheral surface of the film, there are almost no film-forming defects on the surface, and the electrical characteristics are almost uniform over a-.
It becomes possible to deposit a Si film.

【0030】また前記溶剤蒸気層3は有機溶剤2をヒー
タ6等によって沸点より1.5〜10℃低い温度にまで
加熱し、有機溶剤2の一部を気化させることによって容
易に発生させることができることから、洗浄装置に高価
な蒸気発生器等を別途、組み込む必要は一切無く、洗浄
装置を全体構造が簡素で、安価なものとなすことがで
き、その結果、かかる洗浄装置を用いて行なう円筒状基
体の洗浄も安価で作業性の良いものとなすことができ
る。また同時に本発明の基体の洗浄方法においては有機
溶剤の使用量を極小となすことができ、これによって洗
浄のコストをより低く抑えることができる。
The solvent vapor layer 3 can be easily generated by heating the organic solvent 2 to a temperature lower than the boiling point by 1.5 to 10 ° C. by the heater 6 or the like to vaporize a part of the organic solvent 2. Therefore, there is no need to separately install an expensive steam generator or the like in the cleaning device, and the cleaning device can have a simple overall structure and a low cost, and as a result, a cylinder to be used with such a cleaning device. The cleaning of the substrate is inexpensive and has good workability. At the same time, in the method for cleaning a substrate according to the present invention, the amount of the organic solvent used can be minimized, whereby the cost of cleaning can be further suppressed.

【0031】尚、前記円筒状基体4は有機溶剤2より
8.4mm/sec以下の速さで引き上げた場合、円筒
状基体4の洗浄の作業効率が大きく低下し、大量作業に
は適さないものとなり、また15.0mm/sec以上
の速さで引き上げた場合、円筒状基体4を溶剤蒸気層3
中に十分な時間晒すことができず、円筒状基体4の表面
に乾燥しみが発生してしまう。従って、円筒状基体4は
有機溶剤2より8.4乃至15.0mm/secの範囲
の速さで引き上げなければならない。
When the cylindrical substrate 4 is pulled up from the organic solvent 2 at a speed of 8.4 mm / sec or less, the work efficiency of cleaning the cylindrical substrate 4 is greatly reduced, which is not suitable for a large amount of work. And when the cylindrical substrate 4 is pulled up at a speed of 15.0 mm / sec or more,
It cannot be exposed to the inside for a sufficient time, and a dry stain occurs on the surface of the cylindrical substrate 4. Therefore, the cylindrical substrate 4 must be pulled up from the organic solvent 2 at a speed in the range of 8.4 to 15.0 mm / sec.

【0032】(実験例)次に本発明の作用効果を実験例
に基づいて説明する。
(Experimental Example) Next, the operation and effect of the present invention will be described based on an experimental example.

【0033】先ず、超音波振動子とヒータとを組み込ん
だ図1に示す洗浄槽(内容積:30リットル)内にジク
ロロメタンを注入するとともに、前記ヒータによりジク
ロロメタン(沸点:39℃)を36℃の温度に加熱し、
該ジクロロメタン中にアルミニウムから成る円筒状基体
(外径:108mm、長さ寸法:358mm、厚み:5
mm)を浸漬する。
First, dichloromethane was injected into the cleaning tank (internal volume: 30 liters) shown in FIG. 1 in which an ultrasonic vibrator and a heater were incorporated, and dichloromethane (boiling point: 39 ° C.) was adjusted to 36 ° C. by the heater. Heated to temperature,
A cylindrical substrate made of aluminum in the dichloromethane (outer diameter: 108 mm, length dimension: 358 mm, thickness: 5
mm).

【0034】次に前記超音波振動子をCH2 Cl2 中に
おいて28kHzの振動数で2分間振動させて円筒状基
体表面を洗浄させ、しかる後、円筒状基体を、その外周
面が有機溶剤の液面に対し垂直な面を成すように保ちつ
つ、3〜20mm/secの範囲で有機溶剤より引き上
げるとともに円筒状基体表面に付着した有機溶剤を揮散
させ、円筒状基体の洗浄を完了する。
Next, the ultrasonic vibrator is vibrated in CH 2 Cl 2 at a frequency of 28 kHz for 2 minutes to wash the surface of the cylindrical substrate, and thereafter, the outer surface of the cylindrical substrate is treated with an organic solvent. While maintaining the surface perpendicular to the liquid surface, the organic solvent adhering to the surface of the cylindrical substrate is volatilized while being pulled up from the organic solvent in the range of 3 to 20 mm / sec, and the cleaning of the cylindrical substrate is completed.

【0035】円筒状基体の外周面に発生する乾燥しみに
ついて目視で調べ、乾燥しみの発生状況を確認した。そ
の結果を表1に示す。
Dry stains generated on the outer peripheral surface of the cylindrical substrate were visually examined to confirm the occurrence of dry stains. The results are shown in Table 1.

【0036】[0036]

【表1】 [Table 1]

【0037】表1より明らかな通り、円筒状基体を有機
溶剤から引き上げる際の引き上げ速さを15mm/se
c以下の速さとしておけば、円筒状基体は有機溶剤の液
面上に形成される厚みの厚い溶剤蒸気層中に長時間晒さ
れ、溶剤蒸気層内において上方より順次むら無く乾燥さ
れることとなって円筒状基体の表面に乾燥しみは発生し
ないことが判る。
As is clear from Table 1, the pulling speed when pulling up the cylindrical substrate from the organic solvent is 15 mm / se.
If the speed is less than or equal to c, the cylindrical substrate is exposed to a thick solvent vapor layer formed on the liquid surface of the organic solvent for a long time, and is uniformly dried from above in the solvent vapor layer. Therefore, it can be seen that the dry stain does not occur on the surface of the cylindrical substrate.

【0038】尚、本発明は上記実施例に限定されるもの
では無く、本発明の要旨を逸脱しない範囲において、種
々の変更、改良等が可能である。
The present invention is not limited to the above embodiments, and various modifications and improvements can be made without departing from the gist of the present invention.

【0039】[0039]

【発明の効果】本発明の基体の洗浄方法によれば、有機
溶剤の上部に有機溶剤と同一有機物の蒸気から成る厚み
の厚い溶剤蒸気層が形成されているため、有機溶剤より
引き上げられた基体は溶剤蒸気層中に長時間晒される基
体の表面に油等を含んだ有機溶剤が付着しているとして
も該付着する有機溶剤は溶剤蒸気層内においてむら無く
乾燥され、その結果、基体の表面に乾燥しみを発生させ
ることは皆無となる。
According to the substrate cleaning method of the present invention, since a thick solvent vapor layer composed of the vapor of the same organic material as the organic solvent is formed on the organic solvent, the substrate lifted from the organic solvent. Even if an organic solvent containing oil adheres to the surface of the substrate that is exposed to the solvent vapor layer for a long time, the organic solvent that adheres is evenly dried in the solvent vapor layer, and as a result, the surface of the substrate is No dry spots will be generated.

【0040】また本発明の基体の洗浄方法によれば、前
記溶剤蒸気層は有機溶剤をヒータ等により沸点より1.
5〜10℃低い温度にまで加熱し、有機溶剤の一部を気
化させることによって容易に発生させることができるこ
とから、洗浄装置に高価な蒸気発生器等を別途、組み込
む必要は一切無く、洗浄装置を全体構造が簡素で、安価
なものとなすことができ、その結果、かかる洗浄装置を
用いて行なう基体の洗浄も安価で作業性の良いものとな
すことができる。
Further, according to the substrate cleaning method of the present invention, the solvent vapor layer has an organic solvent of 1.
Since it can be easily generated by heating to a temperature 5 to 10 ° C lower and vaporizing a part of the organic solvent, there is no need to separately incorporate an expensive steam generator into the cleaning device, and the cleaning device is completely eliminated. The overall structure can be simple and inexpensive, and as a result, the cleaning of the substrate using such a cleaning device can be inexpensive and easy to work with.

【0041】また同時に本発明の基体の洗浄方法におい
ては有機溶剤の使用量を極小となすことができ、これに
よって洗浄のコストをより低く抑えることができる。
At the same time, in the substrate cleaning method of the present invention, the amount of the organic solvent used can be minimized, which can further reduce the cleaning cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の洗浄方法に使用される洗浄装置の概略
図である。
FIG. 1 is a schematic view of a cleaning device used in a cleaning method of the present invention.

【符号の説明】[Explanation of symbols]

1・・・洗浄槽 2・・・有機溶剤 3・・・溶剤蒸気層 4・・・円筒状基体 5・・・超音波振動子 6・・・ヒータ 7・・・凝縮管 1 ... Cleaning tank 2 ... Organic solvent 3 ... Solvent vapor layer 4 ... Cylindrical substrate 5 ... Ultrasonic transducer 6 ... Heater 7 ... Condensing tube

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基体表面に付着している汚れを下記(1)
乃至(3)の工程により洗浄することを特徴とする基体
の洗浄方法。 (1)有機溶剤中に汚れの付着している基体を浸漬し、
有機溶剤によって汚れを基体より洗い流す工程。 (2)有機溶剤を沸点より1.5〜10℃低い温度に加
熱して、有機溶剤上に溶剤蒸気層を形成する工程。 (3)有機溶剤中に浸漬した基体を8.4乃至15.0
mm/secの速さで有機溶剤より引き上げ基体表面に
付着する有機溶剤を溶剤蒸気層内で揮散させる工程。
1. The stain adhered to the surface of the substrate is described in (1) below.
A method of cleaning a substrate, which comprises cleaning in steps (3) to (3). (1) Dip a substrate with dirt in an organic solvent,
The process of washing dirt from the substrate with an organic solvent. (2) A step of heating the organic solvent to a temperature lower than the boiling point by 1.5 to 10 ° C. to form a solvent vapor layer on the organic solvent. (3) The substrate immersed in the organic solvent is 8.4 to 15.0.
A step of evaporating the organic solvent adhering to the surface of the substrate from the organic solvent at a speed of mm / sec in the solvent vapor layer.
JP4104774A 1992-04-23 1992-04-23 Substrate cleaning method Expired - Fee Related JP2984141B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4104774A JP2984141B2 (en) 1992-04-23 1992-04-23 Substrate cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4104774A JP2984141B2 (en) 1992-04-23 1992-04-23 Substrate cleaning method

Publications (2)

Publication Number Publication Date
JPH05295577A true JPH05295577A (en) 1993-11-09
JP2984141B2 JP2984141B2 (en) 1999-11-29

Family

ID=14389830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4104774A Expired - Fee Related JP2984141B2 (en) 1992-04-23 1992-04-23 Substrate cleaning method

Country Status (1)

Country Link
JP (1) JP2984141B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015229128A (en) * 2014-06-03 2015-12-21 伊藤光学工業株式会社 Processing method of article

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015229128A (en) * 2014-06-03 2015-12-21 伊藤光学工業株式会社 Processing method of article

Also Published As

Publication number Publication date
JP2984141B2 (en) 1999-11-29

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