JPH053169A - Forming method of semiconductor device - Google Patents
Forming method of semiconductor deviceInfo
- Publication number
- JPH053169A JPH053169A JP15364891A JP15364891A JPH053169A JP H053169 A JPH053169 A JP H053169A JP 15364891 A JP15364891 A JP 15364891A JP 15364891 A JP15364891 A JP 15364891A JP H053169 A JPH053169 A JP H053169A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- alloy
- metal
- film
- ionization tendency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 title abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000010949 copper Substances 0.000 abstract description 12
- 229910018182 Al—Cu Inorganic materials 0.000 abstract description 11
- 229910045601 alloy Inorganic materials 0.000 abstract description 11
- 239000000956 alloy Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052801 chlorine Inorganic materials 0.000 abstract description 5
- 239000000460 chlorine Substances 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 229910000365 copper sulfate Inorganic materials 0.000 abstract description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はアルミニウムを主成分と
する金属配線の形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming metal wiring containing aluminum as a main component.
【０００２】[0002]
【従来の技術】半導体集積回路の高密度化にともない、
パターン微細化が進んでいる。2. Description of the Related Art As the density of semiconductor integrated circuits increases,
Patterns are becoming finer.
【０００３】従来のアルミニウム（以下Ａｌと記す）配
線では、Ａｌ本来の脆弱性のため限界に達している。The conventional aluminum (hereinafter referred to as Al) wiring has reached its limit due to the inherent weakness of Al.
【０００４】サブミクロン配線では、配線を流れる電流
密度が５×１０5〜１０6 （Ａ／ｃｍ-2）になり、電流
密度の増大につれてジュール熱の発生が激しくなる。ジ
ュール熱の発生により配線の温度が上昇すると、原子の
拡散係数は増加しエレクトロマイグレーション（以下Ｅ
Ｍと記す）が発生し易くなる。In the submicron wiring, the current density flowing through the wiring is 5 × 10 5 to 10 6 (A / cm −2 ), and the Joule heat is generated more intensely as the current density increases. When the wiring temperature rises due to the generation of Joule heat, the atomic diffusion coefficient increases and electromigration (hereinafter referred to as E
(Referred to as M) easily occurs.
【０００５】一方、配線幅が狭くなるほどストレスマイ
グレーション（以下ＳＭと記す）耐性が低下することが
知られている。On the other hand, it is known that the resistance to stress migration (hereinafter referred to as SM) decreases as the wiring width decreases.
【０００６】このようなＡｌ配線の寿命劣化対策とし
て、配線材料に種々の不純物を添加して、Ａｌ配線の強
化を図ることが検討されている。通常、ＡｌにＣｕを
０．１〜０．５ｗｔ％添加したＡｌ−Ｃｕ合金配線が用
いられる。As measures against such deterioration of the life of the Al wiring, it has been considered to strengthen the Al wiring by adding various impurities to the wiring material. Usually, Al-Cu alloy wiring in which Cu is added to Al at 0.1 to 0.5 wt% is used.
【０００７】Ａｌ中に異種原子であるＣｕを混入すると
転移に移動が妨げられ、機械的強度が増加する析出硬化
が生じて、ＳＭ耐性とともにＥＭ耐性も向上する。When Cu, which is a heteroatom, is mixed into Al, migration is hindered by the transition, precipitation hardening which increases mechanical strength occurs, and SM resistance as well as EM resistance is improved.
【０００８】従来技術によるＡｌ−Ｃｕ合金配線の形成
方法について、図２（ａ）〜（ｄ）を参照して説明す
る。A conventional method of forming an Al--Cu alloy wiring will be described with reference to FIGS. 2 (a) to 2 (d).
【０００９】はじめに図２（ａ）に示すように、半導体
基板１にＢＰＳＧ膜などからなる絶縁膜２を隔てて、ス
パッタ法によりＡｌ−Ｃｕ合金膜３ｂを堆積する。First, as shown in FIG. 2A, an Al--Cu alloy film 3b is deposited on a semiconductor substrate 1 by a sputtering method with an insulating film 2 made of a BPSG film or the like being separated.
【００１０】つぎに図２（ｂ）に示すように、配線パタ
ーンとなるフォトレジスト４を形成する。Next, as shown in FIG. 2 (b), a photoresist 4 to be a wiring pattern is formed.
【００１１】つぎに図２（ｃ）に示すように、塩素系の
エッチングガスによりＡｌ−Ｃｕ合金膜３ｂをエッチン
グする。Next, as shown in FIG. 2C, the Al-Cu alloy film 3b is etched with a chlorine-based etching gas.
【００１２】つぎに図２（ｄ）に示すように、不要にな
ったフォトレジスト４を剥離除去してＡｌ−Ｃｕ合金配
線３ａが完成する。Next, as shown in FIG. 2 (d), the unnecessary photoresist 4 is peeled and removed to complete the Al-Cu alloy wiring 3a.
【００１３】[0013]
【発明が解決しようとする課題】Ａｌ−Ｃｕ配線を形成
するとき、フォトレジストをマスクとして塩素系のエッ
チングガスを用いて異方性エッチングを行なうと、蒸気
圧の低いＣｕの塩化物が生成される。この残渣が発生し
て微細な配線を形成する際の障害となっている。When forming an Al--Cu wiring, anisotropic etching is carried out using a chlorine-based etching gas with a photoresist as a mask to form Cu chloride having a low vapor pressure. It This residue is an obstacle to forming fine wiring.
【００１４】またエッチングガス中に含まれる塩素が残
留して配線が腐食する。このコロージョンと呼ばれる現
象を防止するために、エッチングのあと加熱処理、水洗
処理、ＵＶキュアなどの対策が行なわれている。余分の
設備が必要になったり、作業時間が長くなるなどの問題
があった。対策を講じても、次工程に送るまでの保管時
間に制約があった。Further, chlorine contained in the etching gas remains and corrodes the wiring. In order to prevent this phenomenon called corrosion, measures such as heat treatment, water washing treatment, and UV curing are taken after etching. There were problems such as the need for extra equipment and the longer working time. Even if measures were taken, there was a limit to the storage time before sending to the next process.
【００１５】[0015]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、半導体基板の一主面上に純アルミニウムから
なる配線を形成する工程と、アルミニウムよりもイオン
化傾向の小さい金属を含む金属塩水溶液に浸漬して前記
配線の表面の前記アルミニウムを前記イオン化傾向の小
さい金属と置換する工程と、熱処理を行なって前記イオ
ン化傾向の小さい金属を前記配線の内部へ拡散する工程
とを含むものである。A method of manufacturing a semiconductor device according to the present invention comprises a step of forming a wiring made of pure aluminum on one main surface of a semiconductor substrate, and a metal salt containing a metal having an ionization tendency smaller than that of aluminum. The method includes a step of immersing in a water solution to replace the aluminum on the surface of the wiring with the metal having a small ionization tendency, and a step of performing a heat treatment to diffuse the metal having a small ionization tendency into the inside of the wiring.
【００１６】[0016]
【作用】従来の配線材料であるＡｌ合金を堆積してから
選択エッチングする代りに、本発明では純アルミニウム
で配線を形成してから不純物金属原子を拡散させること
とによりＡｌ合金配線を得ることができる。In place of depositing an Al alloy which is a conventional wiring material and then selectively etching the same, according to the present invention, an Al alloy wiring can be obtained by forming a wiring from pure aluminum and then diffusing impurity metal atoms. it can.
【００１７】[0017]
【実施例】本発明の一実施例について、図１（ａ）〜
（ｄ）を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to (d).
【００１８】はじめに図１（ａ）に示すように、半導体
基板１に形成されたＢＰＳＧ膜などからなる絶縁膜２の
上に、純Ａｌをターゲットとしたスパッタ法により厚さ
１μｍの純Ａｌ膜３を堆積する。First, as shown in FIG. 1A, a pure Al film 3 having a thickness of 1 μm is formed on an insulating film 2 made of a BPSG film or the like formed on a semiconductor substrate 1 by a sputtering method using pure Al as a target. Deposit.
【００１９】つぎに図１（ｂ）に示すように、配線パタ
ーンとなるフォトレジスト４を形成する。Next, as shown in FIG. 1B, a photoresist 4 to be a wiring pattern is formed.
【００２０】つぎに図１（ｃ）に示すように、ＢＣｌ3
などの塩素系のエッチングガスを用いて異方性エッチン
グを行ない、Ａｌ配線３を形成する。つぎにフォトレジ
スト４を除去したのち、例えば硫酸銅などのＣｕの水溶
性化合物を含む水溶液に浸ける。ＣｕよりもＡｌの方が
イオン化傾向が大きいので、Ａｌ配線３の表面からＡｌ
+ ４が溶け出し、代りにＣｕ５がＡｌ配線３の表面に付
着して銅めっきされる。Next, as shown in FIG. 1 (c), BCl 3
Anisotropic etching is performed using a chlorine-based etching gas such as the above to form the Al wiring 3. Next, after removing the photoresist 4, it is dipped in an aqueous solution containing a water-soluble compound of Cu such as copper sulfate. Since Al has a greater ionization tendency than Cu, Al from the surface of the Al wiring 3
+4 is melted out, and Cu5 is instead deposited on the surface of the Al wiring 3 and plated with copper.
【００２１】つぎに図１（ｄ）に示すように、絶縁膜２
上にＣｕイオンが残らないように十分に水洗を行なって
乾燥させる。そのあと３５０℃、Ｎ2 雰囲気で数十分間
アニールして、Ａｌ配線３表面にめっきされたＣｕをＡ
ｌ中に熱拡散させる。こうしてＡｌ配線３はＡｌ−Ｃｕ
合金配線３ａになる。Next, as shown in FIG. 1D, the insulating film 2
It is sufficiently washed with water so that Cu ions do not remain on the surface and dried. Then, it is annealed at 350 ° C. in an N 2 atmosphere for several tens of minutes to remove the Cu plated on the surface of the Al wiring 3
Heat diffusion in 1 In this way, the Al wiring 3 is Al-Cu.
It becomes alloy wiring 3a.
【００２２】本発明はＡｌ−Ｃｕ合金配線に限定される
ことなくなく、例えばＡｌ−Ｎｉ合金配線に適用しても
同様の効果を得ることができる。The present invention is not limited to Al-Cu alloy wiring, and the same effect can be obtained by applying it to Al-Ni alloy wiring, for example.
【００２３】[0023]
【発明の効果】Ａｌ配線を形成してからＡｌよりもイオ
ン化傾向の小さい金属の水溶性化合物の水溶液に浸漬し
てＡｌ配線の表面に不純物金属を付着させる。そのあと
熱処理してＡｌ中に不純物金属を拡散させてＡｌ合金配
線を形成する。EFFECTS OF THE INVENTION After forming an Al wiring, it is immersed in an aqueous solution of a water-soluble compound of a metal having an ionization tendency smaller than that of Al to deposit an impurity metal on the surface of the Al wiring. Then, heat treatment is performed to diffuse an impurity metal into Al to form an Al alloy wiring.
【００２４】Ａｌ−Ｃｕ合金膜の異方性エッチングと異
なり、古くから確立された純Ａｌ膜の異方性エッチング
技術を使用している。残渣による形状障害などが生じな
い。加工性が著しく良好でしかも、ＳＥ耐性、ＳＭ耐性
の良好なＡｌ−Ｃｕ配線を形成できる。半導体集積回路
の信頼性が向上できる。Unlike the anisotropic etching of the Al-Cu alloy film, the anisotropic etching technique of the pure Al film which has been established for a long time is used. Shape residue due to residue does not occur. It is possible to form an Al-Cu wiring having excellent workability and also having excellent SE resistance and SM resistance. The reliability of the semiconductor integrated circuit can be improved.
【図１】本発明の一実施例を工程順に示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of the present invention in the order of steps.
【図２】従来技術によるＡｌ−Ｃｕ合金配線の形成方法
を工程順に示す断面図である。FIG. 2 is a cross-sectional view showing a method of forming an Al—Cu alloy wiring according to a conventional technique in the order of steps.
１ 半導体基板 ２ 絶縁膜 ３ Ａｌ膜 ３ａ Ａｌ−Ｃｕ合金配線 ３ｂ Ａｌ−Ｃｕ合金膜 ４ フォトレジスト DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Insulating film 3 Al film 3a Al-Cu alloy wiring 3b Al-Cu alloy film 4 Photoresist
Claims (1)
からなる配線を形成する工程と、アルミニウムよりもイ
オン化傾向の小さい金属を含む金属塩水溶液に浸漬して
前記配線の表面の前記アルミニウムを前記イオン化傾向
の小さい金属と置換する工程と、熱処理を行なって前記
イオン化傾向の小さい金属を前記配線の内部へ拡散する
工程とを含む半導体装置の製造方法。Claim: What is claimed is: 1. A step of forming a wiring made of pure aluminum on one main surface of a semiconductor substrate, and immersing the wiring in an aqueous solution of a metal salt containing a metal having an ionization tendency lower than that of aluminum. A method of manufacturing a semiconductor device, comprising: a step of substituting the metal having a low ionization tendency on the surface of the aluminum; and a step of performing a heat treatment to diffuse the metal having a low ionization tendency into the wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15364891A JPH053169A (en) | 1991-06-26 | 1991-06-26 | Forming method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15364891A JPH053169A (en) | 1991-06-26 | 1991-06-26 | Forming method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH053169A true JPH053169A (en) | 1993-01-08 |
Family
ID=15567136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15364891A Pending JPH053169A (en) | 1991-06-26 | 1991-06-26 | Forming method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH053169A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335667B1 (en) | 1998-08-28 | 2002-01-01 | Seiko Epson Corporation | Multi-longitudinal mode coupled saw filter |
| KR101018210B1 (en) * | 2007-06-26 | 2011-02-28 | 가부시키가이샤 고베 세이코쇼 | Laminated Structure and Method of Manufacturing the Same |
-
1991
- 1991-06-26 JP JP15364891A patent/JPH053169A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335667B1 (en) | 1998-08-28 | 2002-01-01 | Seiko Epson Corporation | Multi-longitudinal mode coupled saw filter |
| KR101018210B1 (en) * | 2007-06-26 | 2011-02-28 | 가부시키가이샤 고베 세이코쇼 | Laminated Structure and Method of Manufacturing the Same |
| US8053083B2 (en) | 2007-06-26 | 2011-11-08 | Kobe Steel, Ltd. | Layered structure and its manufacturing method |
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