JPH05343000A - Electron gun and cathode-ray tube - Google Patents
Electron gun and cathode-ray tubeInfo
- Publication number
- JPH05343000A JPH05343000A JP14554992A JP14554992A JPH05343000A JP H05343000 A JPH05343000 A JP H05343000A JP 14554992 A JP14554992 A JP 14554992A JP 14554992 A JP14554992 A JP 14554992A JP H05343000 A JPH05343000 A JP H05343000A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- electron
- electron gun
- cathode
- fec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 37
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract description 9
- 239000011521 glass Substances 0.000 abstract description 9
- 230000004075 alteration Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 2
- 101150097247 CRT1 gene Proteins 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、CRT(Cathode Ray
Tube, 陰極線管)や電子ビーム露光装置等のように収束
した電子ビームを利用する各種電子装置の電子銃に係
り、特に電子源として電界放出形のカソード(FEC)
を用いた電子銃に関するものである。The present invention relates to a CRT (Cathode Ray).
Tube (cathode ray tube), electron beam exposure apparatus, and various other electron guns that use a focused electron beam, especially field emission cathodes (FEC) as electron sources.
It relates to an electron gun using.
【0002】[0002]
【従来の技術】図6は従来の一般的なCRTを示してい
る。このCRT1は、電子銃2を備えたネック部と、こ
のネック部から放出された電子ビームを偏向させる偏向
電極3が設けられたファンネル部と、前記電子ビームに
よって励起発光する蛍光体が被着されたパネル部4とを
有している。2. Description of the Related Art FIG. 6 shows a conventional general CRT. The CRT 1 is provided with a neck portion provided with an electron gun 2, a funnel portion provided with a deflection electrode 3 for deflecting an electron beam emitted from the neck portion, and a phosphor that is excited and emitted by the electron beam. And a panel portion 4 having
【0003】図7は従来の一般的なCRTに用いられて
いる電子銃2である。この電子銃2は、ヒータで酸化物
層を加熱する傍熱形カソード5と、引出し電極6と、集
束電極7を有している。FIG. 7 shows an electron gun 2 used in a conventional general CRT. The electron gun 2 includes an indirectly heated cathode 5 that heats an oxide layer with a heater, an extraction electrode 6, and a focusing electrode 7.
【0004】上記のように構成されたCRTによれば、
ネック部の電子銃2から放出された集束した電子ビーム
は、ファンネル部の偏向電極3によってパネル部4の所
定位置へ導かれ、これによって蛍光面が励起発光して所
望の表示が行なわれる。According to the CRT constructed as described above,
The focused electron beam emitted from the electron gun 2 in the neck portion is guided to a predetermined position in the panel portion 4 by the deflection electrode 3 in the funnel portion, whereby the fluorescent screen is excited and emits light and a desired display is performed.
【0005】[0005]
【発明が解決しようとする課題】前述した従来の電子銃
乃至これを利用したCRTによれば次のような問題があ
った。 (1)従来の電子銃のカソードは傍熱形だったので、ヒ
ータ電源をONにしてから電子ビームが得られるまでに
ある程度の時間がかかった。The above-mentioned conventional electron gun and the CRT using the same have the following problems. (1) Since the cathode of the conventional electron gun is an indirectly heated type, it took some time from turning on the heater power supply until an electron beam was obtained.
【0006】(2)電子銃のヒータの寿命が短いので、
長寿命のCRTができなかった。 (3)高電流密度の電子ビームを放出する電子源が得ら
れなかった。(2) Since the life of the heater of the electron gun is short,
I couldn't make a long-life CRT. (3) An electron source that emits an electron beam with a high current density could not be obtained.
【0007】(4)電子銃の電子発生部の直径が数mm
もの大きさであったため、電子レンズ系によってある程
度以下にまでビームを微小に収束させると、収差によっ
てビーム形状に歪が生じるとともに、ビーム径内で電子
密度の不均一が生じ易い。(4) The diameter of the electron generating portion of the electron gun is several mm
Since the size is so large, when the beam is converged minutely to a certain extent or less by the electron lens system, the beam shape is distorted due to the aberration and the electron density is likely to be nonuniform within the beam diameter.
【0008】本発明は、ヒータ電源が不要で、十分な電
子密度で収差の小さい電子ビームが得られる電子銃と、
そのような電子銃を用いたCRTを提供することを目的
としている。The present invention is an electron gun which does not require a heater power supply and which can obtain an electron beam with sufficient electron density and small aberration.
The purpose is to provide a CRT using such an electron gun.
【0009】[0009]
【課題を解決するための手段】本発明の電子銃は、それ
ぞれエミッタとゲートを有する電界放出形カソードアレ
イが複数配設された電界放出形カソードアレイ群と、前
記電界放出形カソードアレイ群に隣接して設けられた電
子ビームの集束電極を有している。An electron gun according to the present invention is provided with a field emission type cathode array group in which a plurality of field emission type cathode arrays each having an emitter and a gate are arranged, and adjacent to the field emission type cathode array group. It has a focusing electrode for the electron beam, which is provided in the same manner.
【0010】また、本発明の陰極線管は、前記発明の電
子銃を備えたネック部と、前記ネック部から放出された
電子ビームを偏向させる偏向電極が設けられたファンネ
ル部と、前記電子ビームによって発光する蛍光体が被着
されたパネル部を有している。The cathode ray tube of the present invention comprises a neck portion provided with the electron gun of the present invention, a funnel portion provided with a deflection electrode for deflecting an electron beam emitted from the neck portion, and the electron beam by the electron beam. It has a panel portion coated with a phosphor that emits light.
【0011】[0011]
【作用】CRTの電子銃において、電界放出形カソード
アレイ群の電界放出形カソードからでた電子ビームは、
集束電極に集束されて放出される。この電子ビームは、
ファンネル部の偏向電極で偏向され、パネル部に射突し
て蛍光体を発光させる。In the electron gun of the CRT, the electron beam emitted from the field emission type cathode of the field emission type cathode array group is
The light is focused on the focusing electrode and emitted. This electron beam
It is deflected by the deflection electrode of the funnel portion and strikes the panel portion to cause the phosphor to emit light.
【0012】[0012]
【実施例】図1〜図3によって第1実施例を説明する。
本実施例は、密封されたガラス容器11を備えたCRT
10に関するものである。即ち、ガラス容器11の細長
い管状のネック部11aには電子銃12が設けられ、こ
のネック部11aから放出された電子ビームはファンネ
ル部の偏向電極3で偏向される。そして該電子ビーム
は、ガラス容器11の前面内面に設けられたパネル部4
の蛍光体に射突してこれを励起発光させ、所望の画像表
示を行なうようになっている。EXAMPLE A first example will be described with reference to FIGS.
This embodiment is a CRT equipped with a sealed glass container 11.
It relates to 10. That is, the electron gun 12 is provided on the elongated tubular neck portion 11a of the glass container 11, and the electron beam emitted from the neck portion 11a is deflected by the deflection electrode 3 of the funnel portion. The electron beam is emitted from the panel portion 4 provided on the inner surface of the front surface of the glass container 11.
Then, the phosphor is irradiated with this phosphor to excite and emit light, thereby displaying a desired image.
【0013】次に、前記電子銃12の構成について詳細
に説明する。セラミック基板13上には、Si又はガラ
ス等の絶縁材料からなる基板14が設けられている。該
基板14上には、スピント形の電界放出形カソード20
(FEC20)が直径約0.5〜0.6mmの範囲内に
多数形成されている。即ち、基板14上には、導電性薄
膜によってカソード導体15が形成され、その上には絶
縁層16とゲート17が積層されている。この絶縁層1
6とゲート17にはフォトリソグラフィ法によってホー
ル18が形成され、該ホール18内のカソード導体15
上にはコーン形状のエミッタ19が蒸着法によって形成
されている。なお、この実施例ではエミッタがスピント
形であるが、スピント形蒸着エミッタ以外に、エッチン
グによる縦型電界放出エミッタでもよいし、方向性に優
れていれば、平面形電界放出エミッタでもよい。Next, the structure of the electron gun 12 will be described in detail. A substrate 14 made of an insulating material such as Si or glass is provided on the ceramic substrate 13. On the substrate 14, a Spindt-type field emission cathode 20 is provided.
A large number of (FEC20) are formed within a range of about 0.5 to 0.6 mm in diameter. That is, the cathode conductor 15 is formed of a conductive thin film on the substrate 14, and the insulating layer 16 and the gate 17 are laminated thereon. This insulating layer 1
A hole 18 is formed in the gate 6 and the gate 17 by photolithography, and the cathode conductor 15 in the hole 18 is formed.
A cone-shaped emitter 19 is formed on the top by vapor deposition. Although the emitter is a Spindt type in this embodiment, a vertical field emission emitter by etching may be used in addition to the Spindt type vapor deposition emitter, or a planar field emission emitter may be used if it has excellent directivity.
【0014】前記FEC20のカソード導体15は、セ
ラミック基板13に設けられたカソードステム21に接
続されており、該カソードステム21はガラス容器11
のネック部11a外に導出されている。The cathode conductor 15 of the FEC 20 is connected to a cathode stem 21 provided on the ceramic substrate 13, and the cathode stem 21 is a glass container 11.
Is led out of the neck portion 11a.
【0015】前記FEC20のゲート17には、中央に
孔が形成された板状の導体22が接続されている。導体
22の両端は、前記セラミック基板13を貫通してFE
C20側に突出した2本のゲートステム23の一端にそ
れぞれ接続されている。少なくとも一方のゲートステム
23の他端は、ガラス容器11のネック部11aを通し
て外方に突出している。A plate-shaped conductor 22 having a hole formed in the center is connected to the gate 17 of the FEC 20. Both ends of the conductor 22 penetrate the ceramic substrate 13 and
It is connected to one end of each of the two gate stems 23 protruding toward the C20 side. The other end of at least one of the gate stems 23 projects outward through the neck portion 11a of the glass container 11.
【0016】前記セラミック基板13上において、前記
導体22の上には絶縁層24が形成され、該絶縁層24
の上には、第1電子ビーム収束電極25が設けられてい
る。第1電子ビーム収束電極25は、前記基板14に形
成されたFEC20を臨む直径0.5〜0.6mmの孔
25aが形成された金属板であり、該孔25a付近にお
ける前記FEC20のゲート17との距離は0.08〜
0.1mmとされている。また、第1電子ビーム収束電
極25の両端は棒状のリード端子26に支えられてお
り、少なくともそのうちの一方はガラス容器11の外に
導出されている。An insulating layer 24 is formed on the conductor 22 on the ceramic substrate 13, and the insulating layer 24 is formed.
A first electron beam focusing electrode 25 is provided on the above. The first electron beam focusing electrode 25 is a metal plate in which a hole 25a having a diameter of 0.5 to 0.6 mm is formed facing the FEC 20 formed on the substrate 14, and the first electron beam focusing electrode 25 and the gate 17 of the FEC 20 near the hole 25a. Distance is 0.08 ~
It is set to 0.1 mm. Both ends of the first electron beam focusing electrode 25 are supported by rod-shaped lead terminals 26, and at least one of them is led out of the glass container 11.
【0017】前記第1電子ビーム収束電極25の上方に
は、0.1〜0.2mmのセラミック絶縁材27を介し
て第2電子ビーム収束電極28が設けられている。この
第2電子ビーム収束電極28の構成は第1電子ビーム収
束電極25と同じであり、リード端子29の少なくとも
一方がガラス容器11の外に導出されている。A second electron beam focusing electrode 28 is provided above the first electron beam focusing electrode 25 via a ceramic insulating material 27 having a thickness of 0.1 to 0.2 mm. The configuration of the second electron beam focusing electrode 28 is the same as that of the first electron beam focusing electrode 25, and at least one of the lead terminals 29 is led out of the glass container 11.
【0018】図3は、この電子銃12において各電極に
電圧を印加する回路図である。この例では、エミッタ1
9を接地し、ゲート17に30〜150V、第1電子ビ
ーム収束電極25には0〜150V、第2電子ビーム収
束電極28には200〜500Vの電圧が印加される。FIG. 3 is a circuit diagram for applying a voltage to each electrode in the electron gun 12. In this example, emitter 1
9 is grounded, 30 to 150 V is applied to the gate 17, 0 to 150 V is applied to the first electron beam focusing electrode 25, and 200 to 500 V is applied to the second electron beam focusing electrode 28.
【0019】図4は、電子銃12の回路図の他の例を示
す。ここでは、ゲート17を接地してあるが、各電極間
に与えられる電位差は図3の場合と同等である。なお、
本実施例の電子銃12は、FEC20と第1及び第2電
子ビーム収束電極25,28を有しているが、必要に応
じてさらに第3及び第4の収束電極を設けるようにして
もよい。FIG. 4 shows another example of a circuit diagram of the electron gun 12. Here, the gate 17 is grounded, but the potential difference applied between the electrodes is the same as in the case of FIG. In addition,
Although the electron gun 12 of this embodiment has the FEC 20 and the first and second electron beam focusing electrodes 25 and 28, third and fourth focusing electrodes may be further provided if necessary. ..
【0020】図5は第2実施例の電子銃30におけるF
ECの構造を示している。FECとしての基本的な電極
構造は第1実施例と同じだが、本実施例では基板31上
に形成されるカソード導体32又はゲート33が、図5
に示すようなパターンで構成されている。即ち、本実施
例のFECは、直径0.5〜0.6mmの円を等しい3
つの扇形に3分割したR(赤)用FECアレイ34R、
G(緑)用FECアレイ34G、B(青)用FECアレ
イ34Bからなり、3つのFECアレイ34R,G,B
によってFECアレイ群34が構成されている。そし
て、FECアレイ群34の各FECアレイは互いに独立
して駆動可能であり、パネル部4に形成された蛍光体の
RGBセグメントに対してFECの各FECアレイ34
R,G,Bが独立して対応することができる。なお、収
束電極の構造や回路は第1実施例と同様である。FIG. 5 shows F in the electron gun 30 of the second embodiment.
The structure of EC is shown. Although the basic electrode structure as the FEC is the same as that of the first embodiment, in this embodiment, the cathode conductor 32 or the gate 33 formed on the substrate 31 is the same as in FIG.
It is composed of a pattern as shown in. That is, in the FEC of this embodiment, a circle having a diameter of 0.5 to 0.6 mm is equal to 3
R (red) FEC array 34R divided into three fan shapes,
It is composed of an FEC array 34G for G (green) and an FEC array 34B for B (blue), and three FEC arrays 34R, G, B.
The FEC array group 34 is configured by. Further, each FEC array of the FEC array group 34 can be driven independently of each other, and each FEC array 34 of the FEC with respect to the RGB segment of the phosphor formed on the panel section 4 is driven.
R, G and B can correspond independently. The structure and circuit of the focusing electrode are the same as in the first embodiment.
【0021】従来の傍熱形陰極では、3本の傍熱形陰極
をデルタ形状に配置したデルタ電子銃と、3本を一列に
並列させたインライン形電子銃があった。デルタ形電子
銃が、解像度においても優れ、またパネル部に設けられ
るシャドウマスクのマスクピッチを小さくできる等の長
所を有している。本実施例は、電子源である各FECア
レイの配置がデルタ形電子銃に近く、かつ従来よりもビ
ーム発生源の径が小さくなっているため、収差が小さく
電子密度の一様な電子ビームが得られる。In the conventional indirectly heated cathode, there are a delta electron gun in which three indirectly heated cathodes are arranged in a delta shape, and an in-line electron gun in which three inwardly heated cathodes are arranged in a line. The delta type electron gun has advantages such as excellent resolution and a small mask pitch of the shadow mask provided on the panel portion. In the present embodiment, the arrangement of each FEC array, which is an electron source, is close to that of a delta-type electron gun, and the diameter of the beam generation source is smaller than in the prior art. can get.
【0022】[0022]
【発明の効果】本発明によれば、次のような効果が得ら
れる。 (1)FECは冷陰極なのでヒータ電源が不要である。 (2)電流密度が5〜10A/cm2 の電子ビームが得
られ、陰極線管による表示の高輝度化が図れる。According to the present invention, the following effects can be obtained. (1) Since the FEC is a cold cathode, a heater power supply is unnecessary. (2) An electron beam having a current density of 5 to 10 A / cm 2 can be obtained, and the brightness of the display by the cathode ray tube can be increased.
【0023】(3)電子発生領域をFECで形成したの
で、例えば直径1mm以下の小さな面積に形成できる。
従って、簡単なレンズ系により、収差が少なくビーム内
の電子密度が一様な収束された電子ビームが得られる。(3) Since the electron generation region is formed by FEC, it can be formed in a small area with a diameter of 1 mm or less, for example.
Therefore, with a simple lens system, a converged electron beam with a small aberration and a uniform electron density in the beam can be obtained.
【0024】(4)従来の傍熱形の電子銃に比較して、
薄形で奥行きの小さい簡単な構造の電子銃ができる。(4) Compared with the conventional indirectly heated electron gun,
You can make a thin electron gun with a simple structure and a small depth.
【図1】第1実施例における電子銃の断面図である。FIG. 1 is a sectional view of an electron gun according to a first embodiment.
【図2】第1実施例における電子銃の拡大断面図であ
る。FIG. 2 is an enlarged cross-sectional view of the electron gun according to the first embodiment.
【図3】第1実施例における電子銃の回路図である。FIG. 3 is a circuit diagram of the electron gun in the first embodiment.
【図4】第1実施例における電子銃の回路図の他の態様
を示す図である。FIG. 4 is a diagram showing another mode of the circuit diagram of the electron gun in the first embodiment.
【図5】第2実施例の電子銃におけるFECのパターン
を示す図である。FIG. 5 is a diagram showing an FEC pattern in the electron gun of the second embodiment.
【図6】一般的な陰極線管の構造を示す断面図である。FIG. 6 is a cross-sectional view showing the structure of a general cathode ray tube.
【図7】従来の電子銃の断面図である。FIG. 7 is a sectional view of a conventional electron gun.
3 偏向電極 4 パネル部 10 CRT 12,30 電子銃 17 ゲート 19 エミッタ 20 FEC 24 第1電子ビーム収束電極 28 第2電子ビーム収束電極 34R,34G,34B 電界放出形カソードアレイ 34 電界放出形カソードアレイ群 3 Deflection Electrode 4 Panel Section 10 CRT 12, 30 Electron Gun 17 Gate 19 Emitter 20 FEC 24 First Electron Beam Focusing Electrode 28 Second Electron Beam Focusing Electrode 34R, 34G, 34B Field Emission Cathode Array 34 Field Emission Cathode Array Group
Claims (2)
放出形カソードアレイが複数配設された電界放出形カソ
ードアレイ群と、前記電界放出形カソードアレイ群に隣
接して設けられた電子ビームの集束電極とを有する電子
銃。1. A field emission type cathode array group in which a plurality of field emission type cathode arrays each having an emitter and a gate are arranged, and an electron beam focusing electrode provided adjacent to the field emission type cathode array group. Electron gun with.
と、前記ネック部から放出された電子ビームを偏向させ
る偏向電極が設けられたファンネル部と、前記電子ビー
ムによって発光する蛍光体が被着されたパネル部を有す
る陰極線管。2. A neck portion provided with the electron gun according to claim 1, a funnel portion provided with a deflection electrode for deflecting an electron beam emitted from the neck portion, and a phosphor emitting light by the electron beam. A cathode ray tube having a deposited panel portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14554992A JP2629521B2 (en) | 1992-06-05 | 1992-06-05 | Electron gun and cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14554992A JP2629521B2 (en) | 1992-06-05 | 1992-06-05 | Electron gun and cathode ray tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05343000A true JPH05343000A (en) | 1993-12-24 |
| JP2629521B2 JP2629521B2 (en) | 1997-07-09 |
Family
ID=15387750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14554992A Expired - Fee Related JP2629521B2 (en) | 1992-06-05 | 1992-06-05 | Electron gun and cathode ray tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2629521B2 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714501A (en) * | 1993-06-22 | 1995-01-17 | Nec Corp | Field emission cold cathode and electron gun therewith |
| JPH07220646A (en) * | 1994-02-07 | 1995-08-18 | Futaba Corp | Cathode-ray tube and cathode-ray tube driving method |
| JPH07235258A (en) * | 1994-02-21 | 1995-09-05 | Futaba Corp | Electron gun and cathode-ray tube and its driving method |
| JPH07245065A (en) * | 1994-03-02 | 1995-09-19 | Futaba Corp | Electron gun, and cathode-ray tube and its driving method |
| JPH08203422A (en) * | 1995-01-27 | 1996-08-09 | Nec Corp | Manufacture of field emission type of cold cathode, and cdt device using field emission type cold cathode element manufactured by that manufacture |
| EP0772218A2 (en) | 1995-10-31 | 1997-05-07 | Nec Corporation | Linear beam microwave tube with planar cold cathode as an electron beam source |
| GB2309822A (en) * | 1996-01-30 | 1997-08-06 | Samsung Display Devices Co Ltd | Electron gun for color CRT |
| US5723867A (en) * | 1995-02-27 | 1998-03-03 | Nec Corporation | Field emission cathode having focusing electrode |
| US5786657A (en) * | 1996-04-16 | 1998-07-28 | Nec Corporation | Field emission electron gun capable of minimizing nonuniform influence of surrounding electric potential condition on electrons emitted from emitters |
| EP0833359A3 (en) * | 1996-09-27 | 1998-09-30 | Nec Corporation | Field emission cathode type electron gun with individually-controlled cathode segments |
| US5877594A (en) * | 1996-05-08 | 1999-03-02 | Nec Corporation | Electron beam apparatus having an electron lens and a structure for compensating for a spherical aberration of the electron lens |
| US5977696A (en) * | 1996-05-09 | 1999-11-02 | Nec Corporation | Field emission electron gun capable of minimizing nonuniform influence of surrounding electric potential condition on electrons emitted from emitters |
| CN1062700C (en) * | 1994-02-07 | 2001-02-28 | 双叶电子工业株式会社 | Cathode ray tube and method for driving same |
| CN1067799C (en) * | 1994-02-21 | 2001-06-27 | 双叶电子工业株式会社 | Electron gun, cathode ray tube and methode for driving cathode ray tube |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4890467A (en) * | 1972-03-01 | 1973-11-26 | ||
| JPS57187849A (en) * | 1981-05-15 | 1982-11-18 | Nippon Telegr & Teleph Corp <Ntt> | Electron gun |
-
1992
- 1992-06-05 JP JP14554992A patent/JP2629521B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4890467A (en) * | 1972-03-01 | 1973-11-26 | ||
| JPS57187849A (en) * | 1981-05-15 | 1982-11-18 | Nippon Telegr & Teleph Corp <Ntt> | Electron gun |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714501A (en) * | 1993-06-22 | 1995-01-17 | Nec Corp | Field emission cold cathode and electron gun therewith |
| CN1062700C (en) * | 1994-02-07 | 2001-02-28 | 双叶电子工业株式会社 | Cathode ray tube and method for driving same |
| JPH07220646A (en) * | 1994-02-07 | 1995-08-18 | Futaba Corp | Cathode-ray tube and cathode-ray tube driving method |
| KR100285941B1 (en) * | 1994-02-07 | 2001-04-16 | 니시무로 아츠시 | Method of driving cathode ray tube and cathode ray tube |
| JPH07235258A (en) * | 1994-02-21 | 1995-09-05 | Futaba Corp | Electron gun and cathode-ray tube and its driving method |
| CN1067799C (en) * | 1994-02-21 | 2001-06-27 | 双叶电子工业株式会社 | Electron gun, cathode ray tube and methode for driving cathode ray tube |
| JPH07245065A (en) * | 1994-03-02 | 1995-09-19 | Futaba Corp | Electron gun, and cathode-ray tube and its driving method |
| JPH08203422A (en) * | 1995-01-27 | 1996-08-09 | Nec Corp | Manufacture of field emission type of cold cathode, and cdt device using field emission type cold cathode element manufactured by that manufacture |
| US5723867A (en) * | 1995-02-27 | 1998-03-03 | Nec Corporation | Field emission cathode having focusing electrode |
| EP0772218A2 (en) | 1995-10-31 | 1997-05-07 | Nec Corporation | Linear beam microwave tube with planar cold cathode as an electron beam source |
| US5796212A (en) * | 1995-10-31 | 1998-08-18 | Nec Corporation | Linear beam microwave tube with planar cold cathode electrode as electron beam source |
| GB2309822A (en) * | 1996-01-30 | 1997-08-06 | Samsung Display Devices Co Ltd | Electron gun for color CRT |
| US5786657A (en) * | 1996-04-16 | 1998-07-28 | Nec Corporation | Field emission electron gun capable of minimizing nonuniform influence of surrounding electric potential condition on electrons emitted from emitters |
| US5877594A (en) * | 1996-05-08 | 1999-03-02 | Nec Corporation | Electron beam apparatus having an electron lens and a structure for compensating for a spherical aberration of the electron lens |
| US5977696A (en) * | 1996-05-09 | 1999-11-02 | Nec Corporation | Field emission electron gun capable of minimizing nonuniform influence of surrounding electric potential condition on electrons emitted from emitters |
| US5977719A (en) * | 1996-09-27 | 1999-11-02 | Nec Corporation | Field emission cathode type electron gun with individually-controlled cathode segments |
| EP0833359A3 (en) * | 1996-09-27 | 1998-09-30 | Nec Corporation | Field emission cathode type electron gun with individually-controlled cathode segments |
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| JP2629521B2 (en) | 1997-07-09 |
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