JPH05347340A - Semiconductor device and its measurement method - Google Patents

Abstract

(57) [Summary] [Construction] A first divided electrode 11a and a second divided electrode 11b, which are divided into two, are provided on the lower surface of the protruding electrode 7, and a power supply potential switch 3 and a first divided electrode connected to the first divided electrode are provided. Of the control switch 9a, the ground potential side switch 4 connected to the second divided electrode, and the second control switch 9b, and a method for measuring the same. [Effect] It is possible to perform non-contact inspection due to electrical conductivity before forming the protruding electrode and after forming the protruding electrode. For this reason, shipping before forming the protruding electrodes and inspection before forming the protruding electrodes can be performed, and the inspection of the semiconductor integrated circuit can be greatly simplified.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor integrated circuit and a measuring method, and more particularly to a semiconductor device capable of measuring before and after forming a protruding electrode on a semiconductor integrated circuit. And the measuring method.

[0002]

2. Description of the Related Art The structure of a bump electrode formed on a conventional semiconductor integrated circuit (hereinafter also referred to as an IC) and its inspection method will be described with reference to FIG.

In general, IC inspection is performed using a prober device. When inspecting an IC using this prober device, a signal input from the outside of the IC
A predetermined process is performed inside, and the potential output to the electrode 6 is
Electrode 6 or protruding electrode 7 formed on this electrode 6
In addition, the measurement is performed by stylus. As a result,
By comparing the expected value and the output predicted in advance by the IC function, the good product and the defective product of the IC are selected.

In the above-described measuring method, all the electrodes 6 or all the protruding electrodes 7 are used as the inspection needles of the prober device.
I have to feel it. Therefore, when the semiconductor integrated circuit is highly integrated and the number of the electrodes 6 is increased, the semiconductor integrated circuit becomes huge and the inspection becomes complicated.

If the inspection can be performed in a non-contact manner without directly contacting the electrode 6 or the protruding electrode 7, the area occupied by the electrode 6 or the protruding electrode 7 can be greatly reduced. The chip area of the IC can be reduced and the inspection can be simplified.

The structure of the semiconductor integrated circuit shown in FIG.
The structure is such that the quality of can be inspected without contacting the electrode 6 or the protruding electrode 7. That is, the power supply potential side switch 3, the ground potential side switch 4, and the control switch 5 that outputs an intermediate potential between the power supply potential and the ground potential are connected to the electrode 6.

The power supply potential line 1, the ground potential line 2, and the intermediate potential line 8 are connected to power supply electrodes (not shown) for supplying power to the IC.

By controlling the power supply potential side switch 3, the ground potential side switch 4, and the control switch 5 in an appropriate combination, the IC can be inspected in a non-contact manner. The inspection method performed without contacting the electrode 6 or the protruding electrode 7 without directly contacting the needle will be described below.

That is, the power supply potential side switch 3 and the control switch 5 are brought into conduction, and the ground potential side switch 4
Control to a non-conducting state. At this time, the current flowing from the outside of the IC through the power supply potential line 1 is measured. By comparing this current value with an expected value predicted in advance from the function of the IC, it can be confirmed that the power supply potential side switch 3 and the control switch 5 can be correctly controlled to be in the conductive state and that the conductive resistance is normal. ..

Similarly, the normal operation of the ground potential side switch 4 can be confirmed by setting the ground potential side switch 4 and the control switch 5 in a conductive state and the power supply potential side switch 3 in a non-conductive state.

On the other hand, the power supply potential side switch 3 and the ground potential side switch 4 are controlled to be non-conductive, and the control switch 5 is controlled to be conductive. At this time, the current flowing out of the IC through the intermediate potential line 8 is measured, and this current is measured by the IC.
It is possible to confirm that the power supply potential side switch 3 and the ground potential side switch 4 can be correctly controlled to be in the non-conducting state and that there is no short circuit failure by comparing with the expected value predicted in advance from the function of.

Similarly, the power supply potential side switch 3 and the ground potential side switch 4 are brought into conduction, and the control switch 5
The normal operation of the control switch 5 can be confirmed by turning off the switch.

[0013]

In the structure of the semiconductor device described with reference to FIG. 2, the quality of the IC is inspected without directly contacting the electrode 6 or the protruding electrode 7 formed on the electrode 6 with the needle. It is possible to do.

The protruding electrode 7 is used for electrical connection between the IC and a circuit board on which the IC is mounted. That is, the electric signal generated from the inside of the IC is transmitted from the electrode 6 to the circuit board via the protruding electrode 7.

Although the electrodes 6 can be formed consistently during the IC manufacturing process, the protruding electrodes 7 are formed on the electrodes 6 of the completed IC.
It is formed by a plating method or a vacuum evaporation method. Therefore, it is necessary to inspect the electrical conductivity before forming the protruding electrode 7 on the electrode 6 and after forming the protruding electrode 7 on the electrode 6.

In the conventional structure shown in FIG. 2, it is possible to measure the current flowing through the electrode 6 via the power supply potential side switch 3, the ground potential side switch 4 and the control switch 5. However, after the protruding electrode 7 is formed on the electrode 6, the electrode 6 and the protruding electrode 7 can be kept at the same potential, and the power supply potential side switch 3, the ground potential side switch 4, and the control switch 5 are not connected. The current flowing through the electrode 6 through the electrode 6 does not flow into the protruding electrode 7.

To measure the current flowing through the protruding electrode 7 after the protruding electrode 7 is formed on the electrode 6, there is no method other than touching the protruding electrode 7 with the inspection needle of the prober device.
Therefore, in the structure of the conventional semiconductor device, the electrical continuity between the electrode 6 and the protruding electrode 7 cannot be inspected in a non-contact manner.

An object of the present invention is to solve the above-mentioned problems and to measure the electrical conductivity without contact before forming a protruding electrode on the electrode and after forming the protruding electrode on the electrode. A possible structure of a semiconductor integrated circuit and its measuring method are provided.

[0019]

In order to achieve the above-mentioned object, the present invention adopts the constitution and measuring method described below.

A semiconductor device according to the present invention comprises a divided electrode, a first divided electrode, and a second divided electrode on the lower surface of the protruding electrode, and the protruding electrode forms the first divided electrode and the second divided electrode. And are connected. A power supply potential side switch and a first control switch are connected to the first divided electrode, and a ground potential side switch and a second control electrode are connected to the second divided electrode.
It is connected to the control switch of. Further, the first control switch and the second control switch have a structure connected to the intermediate potential line.

The measuring method before the formation of the protruding electrode in the present invention is as follows.
The second control switch and the second control switch to control the current to the first split electrode or the second split electrode.
Electrical continuity is measured by flowing through the split electrodes of the.

In the measuring method after the formation of the protruding electrodes in the present invention, the power source potential side switch, the ground potential side switch, the first control switch and the second control switch are controlled so that the current is supplied from the first divided electrode. By flowing to the second split electrode via the protruding electrode,
The measurement is performed by the electrical connection between the divided electrode, the protruding electrode, and the second divided electrode.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a structure of a semiconductor device and a measuring method according to the present invention.

As shown in FIG. 1, the electrode is divided into a first divided electrode 11a and a second divided electrode 11b. First
The power supply potential side switch 3 and the first control switch 9a are connected to the divided electrode 11a, and the ground potential side switch 4 and the second control switch 9b are connected to the second divided electrode 11b. Further, the first control switch 9a and the second control switch 9b are connected to the intermediate potential line 8.

First divided electrode 11a and second divided electrode 1
The protective film 12 provided on the surface 1b removes only the region where the bump electrode 7 is formed. Further, an insulating protective film 12 is provided between the first divided electrode 11a and the second divided electrode 11b. Furthermore, the protruding electrode 7 is formed so as to straddle the first divided electrode 11a and the second divided electrode 11b.

Here, the distance between the first divided electrode 11a and the second divided electrode 11b is made sufficiently small.
Therefore, the first divided electrode 11a and the second divided electrode 1
The protruding electrode 7 formed on the 1b can be formed by the same method as in the case where the electrode is not divided into the first divided electrode 11a and the second divided electrode 11b, and is easily formed. can do.

First divided electrode 11a and second divided electrode 1
1b is consistently formed in the manufacturing process of the semiconductor integrated circuit. First divided electrode 11a and second divided electrode 11b
At the stage of forming and, they are spatially separated and electrically separated from each other, and the first divided electrode 11a and the second divided electrode 11b are not electrically connected.

The protruding electrode 7 is formed so as to straddle the first divided electrode 11a and the second divided electrode 11b of the completed IC. Therefore, it is necessary to inspect before forming the bump electrode 7. Below, the IC before forming the bump electrode 7 is
Describe the non-contact inspection method.

The power supply potential side switch 3 and the first control switch 9a are brought into conduction, and the ground potential side switch 4
And the second control switch 9b are controlled to be in a non-conductive state, and at that time, a current flowing from the outside of the IC through the power supply potential line 1 passes through the power supply potential side switch 3 and the first split electrode 11a to 1 control switch 9a
Through the intermediate potential line 8.

By comparing this current value with an expected value predicted in advance from the function of the IC, the power supply potential switch 3 and the first control switch 9a can be correctly controlled and the normal conduction resistance can be confirmed. Due to
It can be seen that the first divided electrode 11a, the power supply potential switch 3, and the first control switch 9a are properly configured.

Further, the ground potential side switch 4 and the second control switch 9b are controlled to be conductive, and the power supply potential side switch 3 and the first control switch 9a are controlled to be non-conductive, and the IC is connected through the ground potential line 2. The current flowing from the outside passes through the ground potential side switch 4 and the second split electrode 1
It flows to the intermediate potential line 8 through the second control switch 5b via 1b.

By comparing this current value with an expected value predicted in advance from the function of the IC, the ground potential side switch 4, the second control switch 9b and the second switch
It can be confirmed that the divided electrodes 11b and 11b are correctly configured.

Next, the protruding electrodes 7 are connected to the first divided electrodes 11
A method of inspecting the IC after being formed so as to straddle a and the second divided electrode 11b in a non-contact manner will be described below.

The power supply potential side switch 3 and the second control switch 9b are brought into conduction, and the ground potential side switch 4
And the first control switch 9a are controlled to be non-conductive. At this time, the current flowing from the outside of the IC through the power supply potential line 1 passes from the power supply potential side switch 3 to the first split electrode 11a, the projection electrode 7, and the second split electrode 11b to the second control switch. It flows to the intermediate potential line 8 through 9b.

By comparing this current value with an expected value predicted in advance from the function of the IC, the power supply potential side switch 3 and the second control switch 9b are correctly controlled, and by measuring the conduction current, The resistance in the conduction state between the power supply potential side switch 3 and the second control switch 9b, the conduction resistance between the first divided electrode 11a and the protruding electrode 7, and the second divided electrode 11b and the protruding electrode 7 are good. It can be confirmed that

The ground potential side switch 4 and the first control switch 9a are brought into conduction, and the power source potential side switch 3
And the second control switch 9b are controlled to be in a non-conductive state. At this time, the current flowing from the outside of the IC through the ground potential line 2 passes through the ground potential switch 4 and the second divided electrode 1
1b to the protruding electrode 7 and then through the first divided electrode 11a to the second control switch 9b to the intermediate potential line 8
Flows to.

By comparing this current value with an expected value that can be predicted in advance from the function of the IC, the first divided electrode 11a, the second divided electrode 11b, the protruding electrode 7, the power supply potential side switch 3, and the ground potential side switch. 4, the first control switch 9a, and the second control switch 9b
You can see that and are configured correctly.

[0038]

As is apparent from the above description, according to the present invention, it is possible to perform a non-contact inspection of the electrical conductivity before forming the protruding electrode and after forming the protruding electrode. Therefore, it is possible to perform a shipping inspection before forming the protruding electrodes and an inspection before forming the protruding electrodes. Furthermore, since the inspection can be performed in a non-contact manner, the inspection of the semiconductor integrated circuit can be greatly simplified. More electrodes,
Alternatively, the semiconductor integrated circuit can be measured without directly contacting the protruding electrodes. Therefore, by significantly reducing the area occupied by the electrodes and the protruding electrodes, the chip area of the semiconductor device can be reduced.

In addition, according to the present invention, since a current can be passed to the protruding electrodes without contact, it is possible to destroy the insulating thin oxide film formed at the interface between the split electrodes and the protruding electrodes. .. For this reason, there is an effect that the conduction defect between the split electrode and the protruding electrode can be relieved by passing a current between them.

[Brief description of drawings]

FIG. 1 is a drawing showing a structure and a measuring method of a semiconductor device of the present invention.

FIG. 2 is a drawing showing a structure and a measuring method of a conventional semiconductor device.

[Explanation of symbols]

 3 Switch for Power Source Potential 4 Switch for Ground Potential 5 Control Switch 7 Projection Electrode 8 Intermediate Potential Line 9a First Control Switch 9b Second Control Switch 11a First Split Electrode 11b Second Split Electrode

Claims (3)

[Claims] 1. A first divided electrode and a second divided electrode which are divided into two on the lower surface of the protruding electrode, and a power supply potential switch and a first control switch connected to the first divided electrode, and a second divided electrode. A semiconductor device having a ground potential side switch and a second control switch connected to the divided electrodes. 2. A protrusion electrode is formed by controlling a switch on the power supply potential side and a second control switch to cause a current to flow from the first divided electrode to the second divided electrode via the protruding electrode. A method for measuring a semiconductor device, which comprises measuring the electrical continuity between a first divided electrode, a protruding electrode and a second divided electrode. 3. The power source potential side switch and the first control switch of the semiconductor device before the formation of the protruding electrode are controlled so that the current flows from the power source potential side switch to the first split electrode. The method for measuring a semiconductor device is characterized in that the electric conduction can be measured before forming the protruding electrodes by flowing the electric current through the control switch 1.