JPH054048A - Catalyst for treatment of exhaust gas and its production - Google Patents
Catalyst for treatment of exhaust gas and its productionInfo
- Publication number
- JPH054048A JPH054048A JP3011114A JP1111491A JPH054048A JP H054048 A JPH054048 A JP H054048A JP 3011114 A JP3011114 A JP 3011114A JP 1111491 A JP1111491 A JP 1111491A JP H054048 A JPH054048 A JP H054048A
- Authority
- JP
- Japan
- Prior art keywords
- catalyst
- exhaust gas
- molecular sieve
- honeycomb
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003054 catalyst Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical group [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 19
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002002 slurry Substances 0.000 claims abstract description 9
- 239000011230 binding agent Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 16
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract description 9
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 229930195733 hydrocarbon Natural products 0.000 abstract description 4
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 4
- 239000002808 molecular sieve Substances 0.000 abstract description 3
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 8
- 229910000851 Alloy steel Inorganic materials 0.000 description 6
- 229910052878 cordierite Inorganic materials 0.000 description 6
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021472 group 8 element Inorganic materials 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000001477 organic nitrogen group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Catalysts (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は窒素酸化物(以下、NO
xと略称)、一酸化炭素(CO)、炭化水素(以下、H
cと略称)を含有する排気ガスを処理する触媒及びその
製造方法に関する。The present invention relates to nitrogen oxides (hereinafter referred to as NO
abbreviated as x), carbon monoxide (CO), hydrocarbon (hereinafter, H
The present invention relates to a catalyst for treating exhaust gas containing abbreviated as c) and a method for producing the same.
【0002】[0002]
【従来の技術】自動車等の排ガス処理においては、排ガ
ス中の有機物、COを用いてNOxを浄化するのが一般
的であったが、従来のPt,Rh/Al2 O3 系触媒
(この触媒は通常三元触媒と呼ばれている)では理論空
燃比付近の極めて狭い範囲でしかNOxを浄化できなか
った。近年、自動車の低燃費への要求が強くなってお
り、理論空燃比以上にて燃焼させるリーンバーンエンジ
ンがそのキーテクノロジーとして復活してきている。リ
ーンバーンエンジンはNOxの排出が多いが、最近、リ
ーン領域でNOxを浄化できる実用的な触媒として銅を
含有した分子篩構造をもった触媒が開発された。2. Description of the Related Art In the treatment of exhaust gas from automobiles and the like, it is common to purify NOx by using organic substances and CO in the exhaust gas. However, conventional Pt, Rh / Al 2 O 3 -based catalysts (this catalyst Is usually called a three-way catalyst), but NOx can be purified only in an extremely narrow range near the stoichiometric air-fuel ratio. In recent years, there has been a strong demand for low fuel consumption of automobiles, and a lean burn engine that burns at a ratio higher than the theoretical air-fuel ratio has been revived as a key technology. The lean burn engine emits a large amount of NOx, but recently, a catalyst having a molecular sieve structure containing copper has been developed as a practical catalyst capable of purifying NOx in the lean region.
【0003】しかし、従来のセラミック担体を用いた場
合、比熱が大きいため、触媒入口排ガス温度と触媒ベッ
ド温度の差が大きく、温度追随に時間を要した。通常、
起動加速時の瞬時のリーン領域に多くのNOxを発生す
るが、触媒ベッド温度が低いため、分子篩構造をもった
触媒が十分な脱硝活性を発揮するまでに到らなかった。However, when the conventional ceramic carrier is used, since the specific heat is large, the difference between the exhaust gas temperature at the catalyst inlet and the catalyst bed temperature is large, and it takes time to follow the temperature. Normal,
Although a large amount of NOx is generated in an instant lean region at the time of start-up acceleration, the catalyst having a molecular sieve structure could not exhibit sufficient denitration activity because of the low catalyst bed temperature.
【0004】[0004]
【発明が解決しようとする課題】通常、自動車排ガス浄
化触媒の触媒ベッド温度は触媒入口温度よりもHC,C
Oの燃焼による発熱のため高温となる。たゞし、銅を含
有した分子篩構造を有する触媒は従来のPt,Rh/A
l2 O3 系の三元触媒よりもHCやCOを燃焼除去する
低温での活性が低いため、起動加速時時においては分子
篩構造を有する触媒ベッド温度は三元触媒に比べて低
い。そのため、比熱が小さく熱応答性が良好なハニカム
担体上に分子篩構造を有する触媒を担持することが望ま
れている。Generally, the catalyst bed temperature of the automobile exhaust gas purifying catalyst is higher than the catalyst inlet temperature by HC or C.
Due to the heat generated by the combustion of O, the temperature becomes high. However, the catalyst having a molecular sieve structure containing copper is conventional Pt, Rh / A
Since it has lower activity at low temperature for burning and removing HC and CO than the l 2 O 3 -based three-way catalyst, the catalyst bed temperature having a molecular sieve structure is lower than that of the three-way catalyst during start-up acceleration. Therefore, it is desired to support a catalyst having a molecular sieve structure on a honeycomb carrier having a small specific heat and a good thermal response.
【0005】銅を含有した分子篩構造を有した触媒のハ
ニカム基材へのコート厚さの影響を検討したところ、コ
ート量(厚さ)が多いほど低温における脱硝活性が高く
なり、コート厚さとして100μm 以上が好ましい触媒
層であることが分かったが、コート厚さ100μm 担持
させる場合、400セルの自動車ハニカム基材では通気
孔内の圧力損失が大きくなるので、ハニカム壁厚が薄い
基材を用いることが好ましいのが現状である。When the influence of the coating thickness of the catalyst having the molecular sieve structure containing copper on the honeycomb substrate was examined, the larger the coating amount (thickness), the higher the denitration activity at low temperature, and the coating thickness was increased. It has been found that a catalyst layer having a thickness of 100 μm or more is preferable, but when a coat thickness of 100 μm is carried, a pressure loss in the vent hole becomes large in a 400-cell automobile honeycomb substrate, so a substrate having a thin honeycomb wall is used. The present situation is that it is preferable.
【0006】一方、従来の三元触媒はコート厚さ20μ
m 以上では同様の性能を有することから、触媒担持によ
る圧力損失はあまり問題とならない。On the other hand, the conventional three-way catalyst has a coat thickness of 20 μm.
Since it has the same performance at m and above, pressure loss due to catalyst loading does not pose a problem.
【0007】本発明は上記技術水準に鑑み、触媒ベッド
の温度応答性が優れ、HC,CO及びNOxを除去しう
る銅を含有す分子篩構造をもつ触媒及びその製造方法を
提供しようとするものである。In view of the above-mentioned state of the art, the present invention is to provide a catalyst having a molecular sieve structure containing copper capable of removing HC, CO and NOx, which is excellent in temperature responsiveness of a catalyst bed, and a method for producing the same. is there.
【0008】[0008]
【課題を解決するための手段】本発明者らは銅を含有し
た分子篩構造を有する触媒を金属ハニカム担体上にコー
トし、触媒の熱応答性を高め、さらにハニカムの圧力損
失を緩和する触媒を見い出した。また、分子篩構造を有
する触媒は数μm 程度の粒子径を有するため金属担体表
面上にコートすることが困難であるが、特定方法により
耐剥離性等を向上させうることを見出した。[Means for Solving the Problems] The present inventors have proposed a catalyst which coats a catalyst having a molecular sieve structure containing copper on a metal honeycomb carrier to enhance the thermal response of the catalyst and further reduce the pressure loss of the honeycomb. I found it. Further, it has been found that a catalyst having a molecular sieve structure has a particle size of about several μm and thus it is difficult to coat it on the surface of a metal carrier, but the peeling resistance and the like can be improved by a specific method.
【0009】本発明は上記知見によって完成されたもの
であって、
(1)銅を含有した分子篩構造をもつ結晶性シリケート
をメタルハニカム上にコートしてなることを特徴とする
排気ガス処理触媒。The present invention has been completed based on the above findings, and (1) An exhaust gas treatment catalyst comprising a metal honeycomb coated with a crystalline silicate having a molecular sieve structure containing copper.
【0010】(2)Alを蒸着した金属担体をコルゲー
ト加工又はハニカム加工を行い、雰囲気炉で加熱して表
面を合金化し、さらに酸化雰囲気でAl2 O3 ウイスカ
ーを形成させた後、銅を含有した分子篩構造をもつ結晶
性シリケートにバインダーを添加し、湿式混合して得ら
れたスラリーを上記Al2 O3 ウイスカーを形成したメ
タルハニカムにウォッシュコートすることを特徴とする
排気ガス処理触媒の製造方法。である。(2) The metal carrier on which Al is vapor-deposited is subjected to corrugation processing or honeycomb processing, the surface is alloyed by heating in an atmosphere furnace, and further Al 2 O 3 whiskers are formed in an oxidizing atmosphere, and then copper is contained. A method for producing an exhaust gas treatment catalyst, characterized in that a binder obtained by adding a binder to the crystalline silicate having a molecular sieve structure and wet-mixing the resulting slurry is wash-coated on the Al 2 O 3 whisker-formed metal honeycomb. . Is.
【0011】本発明でいう分子篩構造を有する結晶性シ
リケートとはY型ゼオライト、モルデナイト及び脱水さ
れた形態で酸化物のモル比が
(1±0.8)R2 O・〔aM2 O3 ・bAl2 O3 〕・ySiO2
上記式中、R:アルカリ金属イオン及び/又は有機窒素
含有化合物のイオン又は水素イオン、
M:VIII族元素、希土類元素、チタン、バナジウム、ク
ロム、ニオブ、ガリウム、アンチモン、タンタルからな
る群の一種以上の元素のイオン
a+b=1、a≧20、b≧0、y≧11
の化学組成を有し、かつX線回折図が特に表1で示され
た反射を示すものが好ましい。The crystalline silicate having a molecular sieve structure as referred to in the present invention means Y type zeolite, mordenite and a dehydrated form in which the molar ratio of oxides is (1 ± 0.8) R 2 O. [aM 2 O 3 .. bAl 2 O 3 ] .ySiO 2 In the above formula, R: an ion or hydrogen ion of an alkali metal ion and / or an organic nitrogen-containing compound, M: a Group VIII element, a rare earth element, titanium, vanadium, chromium, niobium, gallium, antimony , Ions of one or more elements from the group consisting of tantalum, a + b = 1, a ≧ 20, b ≧ 0, y ≧ 11, and the X-ray diffractogram shows the reflections particularly shown in Table 1. Those are preferable.
【表1】 [Table 1]
【0012】分子篩構造を有する結晶シリケートに銅を
含有させる方法としては硝酸銅、酢酸銅、塩化銅、硫酸
銅の各金属銅塩の水溶液を用いてイオン交換法あるいは
含浸法を用いて担持する方法が好ましい。As a method of incorporating copper into a crystalline silicate having a molecular sieve structure, a method of carrying it by an ion exchange method or an impregnation method using an aqueous solution of copper nitrate, copper acetate, copper chloride or copper sulfate metal copper salt is used. Is preferred.
【0013】銅を含有した分子篩構造をもつ結晶シリケ
ートを担持する金属担体の素材としては、800℃のよ
うな高温においても耐高温酸化性に優れ、熱間、冷間圧
延により容易に50μm 以下の箔に加工することができ
るので、Crを5%以上含む低合金鋼又はフェライト系
ステンレス鋼が好ましい。As a material for a metal carrier which supports a crystalline silicate having a molecular sieve structure containing copper, it is excellent in high temperature oxidation resistance even at a high temperature such as 800 ° C., and is easily heated to 50 μm or less by hot rolling or cold rolling. A low alloy steel containing 5% or more of Cr or a ferritic stainless steel is preferable because it can be processed into a foil.
【0014】銅を含有した分子篩構造をもつ結晶シリケ
ートを金属担体上にコートする方法を以下説明する。金
属担体の素材としてCrを5%以上含む低合金鋼又はフ
ェライト系ステンレス鋼の箔を用い、Alを蒸着後、コ
ルゲート加工又はハニカム加工を行う。Al蒸着に当っ
ては前処理としてArスパッタリングして表面を清浄に
し、10-5〜10-4Torrの圧力下で電子ビームによ
りAlを加熱蒸着させるのが好ましい手段である。Al
の膜厚さは1〜8μm 、特に2〜6μm が操作性、剥離
安定性上から好ましい。A method of coating a crystalline silicate having a molecular sieve structure containing copper on a metal carrier will be described below. A foil of low alloy steel or ferritic stainless steel containing 5% or more of Cr is used as a material for the metal carrier, and after corroding Al, corrugation processing or honeycomb processing is performed. In the case of Al vapor deposition, a preferable means is to perform Ar sputtering as a pretreatment to clean the surface, and heat vapor deposit Al by electron beam under a pressure of 10 −5 to 10 −4 Torr. Al
The film thickness of 1 to 8 μm, particularly 2 to 6 μm is preferable from the viewpoint of operability and peeling stability.
【0015】次に、Al蒸着箔を加工後、積層し雰囲気
炉で加熱してAlを箔表面近傍に拡散処理して表面を合
金化する。すなわち、上記工程で得られたものは金属A
l層が金属箔表面にたゞ存在するのみであるので、これ
を700〜1200℃の温度で熱処理し、金属基材表面
に基材金属とAlの合金層を形成させるのである。この
熱処理により、例えばFe(Ni)Al3 ,Fe(N
i)2 Al5 などの合金層が形成される。Next, after processing the Al vapor deposition foils, they are laminated and heated in an atmosphere furnace to diffuse Al in the vicinity of the foil surface to alloy the surface. That is, the product obtained in the above process is metal A
Since the 1-layer exists only on the surface of the metal foil, it is heat-treated at a temperature of 700 to 1200 ° C. to form an alloy layer of the base metal and Al on the surface of the metal base. By this heat treatment, for example, Fe (Ni) Al 3 , Fe (N
i) An alloy layer such as 2 Al 5 is formed.
【0016】その後、酸化雰囲気で酸化処理し、表面に
Al2 O3 酸化皮膜又はAl2 O3 ウイスカーを形成さ
せる。酸化条件は900〜1000℃、5〜15時間が
好ましい。After that, oxidation treatment is performed in an oxidizing atmosphere to form an Al 2 O 3 oxide film or Al 2 O 3 whiskers on the surface. Oxidation conditions are preferably 900 to 1000 ° C. and 5 to 15 hours.
【0017】最後に、銅を含有した分子篩構造をもつ結
晶性シリケート(触媒)と、バインダーとしてシリカゾ
ル、アルミナゾルを湿式混合してスラリーを得、このス
ラリーを上記方法で製作した金属担体にウォッシュコー
トし、所定の触媒を金属担体上に担持させる。この際触
媒100重量部に対して、シリカゾル3〜30重量部、
アルミナゾル0.3〜10重量部の割合でスラリーを製
造することが好ましい。バインダー(シリカゾルとアル
ミナゾル)の割合が多いと触媒活性が低下し、割合が少
ないと触媒の剥離性に問題がある。また、シリカゾル/
アルミナゾル比は2〜100の範囲が比較的好ましい結
果が得られる。Finally, a crystalline silicate (catalyst) having a molecular sieve structure containing copper and silica sol or alumina sol as a binder are wet mixed to obtain a slurry, and the slurry is wash-coated on the metal carrier produced by the above method. , A predetermined catalyst is supported on a metal carrier. At this time, with respect to 100 parts by weight of the catalyst, 3 to 30 parts by weight of silica sol,
It is preferable to produce the slurry at a ratio of 0.3 to 10 parts by weight of the alumina sol. If the proportion of the binder (silica sol and alumina sol) is large, the catalytic activity is lowered, and if the proportion is small, there is a problem in the peelability of the catalyst. In addition, silica sol /
Alumina sol ratio in the range of 2 to 100 gives relatively preferable results.
【0018】[0018]
(実施例1)
1.金属担体上に担持した銅を含有した分子篩構造を有
する触媒の担持方法(Example 1) 1. Method for supporting catalyst having molecular sieve structure containing copper supported on metal carrier
【0019】(1)使用した金属薄板はCr量の5wt
%の低合金鋼で厚さ50μm のものを使用した。(1) The thin metal plate used is 5 wt% of Cr.
% Low alloy steel with a thickness of 50 μm was used.
【0020】(2)Alコーティングは薄目付けで、か
つ均一な膜厚さを得るために真空蒸着法を適用した。用
いた蒸着装置の概略図を図1によって説明する。金属薄
板(50μm 厚さの5wt%Cr含有低合金鋼薄板)1
はコイルより送り出され、差圧用ロール5を通って真空
雰囲気内に送りこまれ、先ず前処理室ではAr雰囲気中
で基材前処理高周波スパッタ用電極2から放出されるA
rイオンによりスパッタリングして表面を清浄にする。
(真空度は5×10-4Torr程度)次に蒸着室に金属
薄板は送りこまれ、Al蒸着用電子ビーム蒸発源(るつ
ぼ温度1400℃付近)3より蒸発したAl蒸気が蒸着
される。(蒸着室の真空度は3×10-4Torr程度)
Al蒸着後の金属薄板は差圧ロール5を通り、巻取りロ
ール4で巻き取られる。この際、Al蒸着膜の厚さを4
μm とした。(2) The Al coating was applied by a vacuum vapor deposition method in order to obtain a thin coating weight and obtain a uniform film thickness. A schematic diagram of the vapor deposition apparatus used will be described with reference to FIG. Metal thin plate (50 μm thick 5 wt% Cr-containing low alloy steel thin plate) 1
Is sent out from the coil, sent into the vacuum atmosphere through the differential pressure roll 5, and is first discharged from the substrate pretreatment high-frequency sputtering electrode 2 in the Ar atmosphere in the pretreatment chamber.
Sputtering with r ions cleans the surface.
(The degree of vacuum is about 5 × 10 −4 Torr) Next, the thin metal plate is sent to the vapor deposition chamber, and the Al vapor evaporated from the electron beam evaporation source 3 for Al vapor deposition (crucible temperature around 1400 ° C.) 3 is vapor deposited. (The degree of vacuum in the deposition chamber is about 3 × 10 -4 Torr)
The metal thin plate after Al vapor deposition passes through the differential pressure roll 5 and is wound up by the winding roll 4. At this time, the thickness of the Al vapor deposition film should be 4
μm.
【0021】(3)次に、Alを蒸着した低合金鋼薄板
を酸化炉に導き、930℃×8時間の処理を施して表面
にAl2 O3 酸化皮膜、Al2 O3 ウイスカーを形成さ
せた。(3) Next, the low alloy steel thin plate on which Al is vapor-deposited is introduced into an oxidation furnace and treated at 930 ° C. for 8 hours to form an Al 2 O 3 oxide film and an Al 2 O 3 whisker on the surface. It was
【0022】(4)上記低合金鋼薄板をコルゲート加工
後、オーバルハニカムに成型し、下記の組成のスラリー
をウォッシュコートし、乾燥後、繰り返しウォッシュコ
ートを実施して60μm の厚さまで触媒をコートした。
この触媒を触媒Aとする。
スラリー組成
銅を含有した分子篩構造を有する結晶性シリケート: 100重量部
水 : 200重量部
シリカゾル(SiO2 20%含有) : 50重量部
アルミナゾル(Al2 O3 20%含有) : 20重量部(4) The low alloy steel thin plate was corrugated, molded into an oval honeycomb, wash-coated with a slurry having the following composition, dried and then repeatedly wash-coated to coat the catalyst to a thickness of 60 μm. .
This catalyst is designated as catalyst A. Slurry composition Crystalline silicate having a molecular sieve structure containing copper: 100 parts by weight Water: 200 parts by weight Silica sol (containing 20% of SiO 2 ): 50 parts by weight Alumina sol (containing 20% of Al 2 O 3 ): 20 parts by weight
【0023】なお上記の銅を含有した分子篩構造を有す
る結晶性シリケートは次のようにして製造されたもので
ある。脱水された形態で酸化物のモル比がNa2 O
〔0.4Fe2 O3 ・0.1Co 2 O3 ・0.5Al2
O3 〕・30SiO2 で表わされる化学組成を有し、か
つX線回折図が前記表1に示された反射を示す結晶性シ
リケートを酸化銅0.04モル濃度の水溶液によって室
温下で12時間イオン交換を行う操作を4回行い、洗
浄、ろ過後100℃×12時間乾燥して製造されたもの
であって脱水された形態で酸化物のモル比が1.2Cu
O・〔0.4Fe2 O3 ・0.1Co2 O3 ・0.5A
l2 O3 〕・30SiO2で表わされるものである。It has a molecular sieve structure containing the above copper
The crystalline silicate produced by
is there. In the dehydrated form, the oxide molar ratio is Na2O
[0.4Fe2O3・ 0.1Co 2O3・ 0.5Al2
O3] ・ 30SiO2Has a chemical composition represented by
X-ray diffractogram is a crystalline matrix showing the reflection shown in Table 1 above.
The silicate was stored in an aqueous solution containing 0.04 molar copper oxide
Perform ion exchange operation for 12 hours at a temperature four times and wash.
After being purified and filtered, it is dried at 100 ° C for 12 hours.
And the molar ratio of oxides in the dehydrated form is 1.2 Cu
O ・ [0.4Fe2O3・ 0.1Co2O3・ 0.5A
l2O3] ・ 30SiO2Is represented by.
【0024】2.剥離試験
上記方法にて調整した金属薄板上の触媒の剥離状態を確
認するため下記方法にて触媒の剥離試験を実施した。剥
離試験は約60μm 厚さのウォッシュコートを施した後
1100℃の火炎温度のプロパン/空気バーナーで5秒
加熱後、25秒間圧縮空気を吹きつける操作を自動で8
時間繰り返しウォッシュコートの剥離性を観察したとこ
ろほとんど触媒が剥離していないことを確認した。2. Peeling test In order to confirm the peeling state of the catalyst on the thin metal plate prepared by the above method, a catalyst peeling test was carried out by the following method. The peeling test was performed by applying a washcoat of about 60 μm thickness, heating for 5 seconds with a propane / air burner with a flame temperature of 1100 ° C., and then blowing compressed air for 25 seconds automatically.
When the peelability of the washcoat was observed repeatedly over time, it was confirmed that the catalyst was hardly peeled.
【0025】(比較例1)比較のために従来のセラミッ
クハニカムに分子篩構造を有する触媒の調製法を以下に
記す。実施例1と同様組成のスラリー溶液中にコージェ
ライト製セラミックハニカムにウォッシュコートし、目
詰まりのないよう十分スラリーを空気パージした後乾燥
し、繰り返しウォッシュコートし60μm 厚さで触媒を
コートした。この触媒を触媒Bとする。なお、実施例1
で示したコルゲート状金属ハニカム担体とコージェライ
ト担体はいずれも外表面積は2.7m2 /1リットル体
積を有する。Comparative Example 1 For comparison, a conventional method for preparing a catalyst having a molecular sieve structure in a ceramic honeycomb will be described below. A cordierite ceramic honeycomb was wash-coated in a slurry solution having the same composition as in Example 1, air-purged sufficiently to prevent clogging, and then dried, and wash-coated repeatedly to coat a catalyst to a thickness of 60 μm. This catalyst is referred to as catalyst B. In addition, Example 1
Both the corrugated metal honeycomb carrier and the cordierite carrier shown in 1) have an outer surface area of 2.7 m 2 / l liter volume.
【0026】3.活性評価試験
実施例1、比較例1に示す触媒A、Bの1リットルのハ
ニカム触媒を1.6リットルのエンジンの排気系に装着
して運転開始を行い、触媒活性の経時変化を調べた。A
/F=18(リーン状態付近)、回転数2000rp
m、マニホールド負圧350mmHgで運転を開始した際の
入口排ガス温度、触媒ベッド温度及び排気ガス(炭化水
素、一酸化炭素、窒素酸化物)の浄化効率の経時変化を
図2(触媒A)、図3(触媒B)に示す。図2、図3よ
り本発明触媒Aの温度応答性が良好であるため瞬時にお
いて排ガス浄化活性を有することがわかる。3. Activity evaluation test The 1 liter honeycomb catalysts of catalysts A and B shown in Example 1 and Comparative Example 1 were mounted in the exhaust system of a 1.6 liter engine to start the operation, and the change in catalyst activity with time was examined. A
/ F = 18 (around lean state), rotation speed 2000 rp
Fig. 2 (catalyst A), Fig. 2 (catalyst A), showing the changes over time in inlet exhaust gas temperature, catalyst bed temperature and purification efficiency of exhaust gas (hydrocarbons, carbon monoxide, nitrogen oxides) when operation was started at m, manifold negative pressure of 350 mmHg 3 (catalyst B). 2 and 3, it can be seen that the catalyst A of the present invention has good temperature responsiveness and thus has instant exhaust gas purification activity.
【0027】(実施例2)銅を含んだ分子篩構造を有す
る触媒(実施例1と同じ触媒)を同一形状であるが壁厚
さが異なる2種のハニカム基材(壁厚・・・メタル0.
2μm 、コージェライト0.4mm)に空孔率が同一にな
るようコートした。その結果金属ハニカムには200μ
m 、コージェライトには100μm のコート厚さで触媒
を担持することが可能であった。これらのハニカム触媒
を触媒C、Dとし、コート状態の模式図を図4及び図5
に示す。(Example 2) Two kinds of honeycomb substrates (wall thickness: metal 0) having the same shape but different wall thickness were used for the catalyst having the molecular sieve structure containing copper (the same catalyst as in Example 1). .
2 μm, cordierite 0.4 mm) was coated to have the same porosity. As a result, 200μ for the metal honeycomb
It was possible to support the catalyst with a coat thickness of 100 μm on m 2 and cordierite. These honeycomb catalysts are referred to as catalysts C and D, and schematic views of the coated state are shown in FIGS.
Shown in.
【0028】両触媒を用いて下記反応条件において定常
状態における触媒の活性評価試験を実施した。
反応条件 SV:30000h-1
排ガス組成 NO:400ppm、C3 H6 :340p
pm、C2 H4 :1000ppm、O2 :8%、C
O2 :10%、CO:1000ppm
各反応温度における脱硝率の結果を図6に示す。この結
果より触媒を多くコートできる金属ハニカム基材を使用
する方が低温での脱硝活性が大であることがわかる。Using both catalysts, a catalyst activity evaluation test in a steady state was carried out under the following reaction conditions. Reaction conditions SV: 30000h −1 Exhaust gas composition NO: 400ppm, C 3 H 6 : 340p
pm, C 2 H 4 : 1000 ppm, O 2 : 8%, C
O 2 : 10%, CO: 1000 ppm The results of the denitration rate at each reaction temperature are shown in FIG. From this result, it can be seen that the denitration activity at a low temperature is larger when the metal honeycomb substrate that can coat a large amount of the catalyst is used.
【0029】[0029]
【発明の効果】図2、図3に示すように運転開始初期に
おいて本発明触媒は触媒ベッドの温度応答性が良好なた
め、瞬時において炭化水素、CO、NOを除去すること
が可能である。さらに従来のコージェライトハニカムに
比べメタルハニカムの方が同一の圧力損失で分子篩構造
を有する触媒を多量にコートすることが可能であるため
触媒の低温活性を向上させることを可能にした。As shown in FIGS. 2 and 3, the catalyst of the present invention has a good temperature responsiveness of the catalyst bed at the initial stage of operation, so that it is possible to remove hydrocarbons, CO and NO instantaneously. Further, compared with the conventional cordierite honeycomb, the metal honeycomb can coat a large amount of the catalyst having the molecular sieve structure with the same pressure loss, and thus the low temperature activity of the catalyst can be improved.
【図1】本発明の一実施例に係るメタルハニカムを製造
する際のAlの真空蒸着法の説明図。FIG. 1 is an explanatory view of a vacuum deposition method of Al when manufacturing a metal honeycomb according to an embodiment of the present invention.
【図2】本発明の一実施例触媒を用いた際の触媒ベッド
温度と排気ガス浄化率の経時変化図表。FIG. 2 is a chart showing changes with time in catalyst bed temperature and exhaust gas purification rate when a catalyst according to an embodiment of the present invention is used.
【図3】比較触媒を用いた際の触媒ベッド温度と排気ガ
ス浄化率の経時変化図表。FIG. 3 is a chart showing changes with time in catalyst bed temperature and exhaust gas purification rate when a comparative catalyst is used.
【図4】金属ハニカムに分子篩触媒をコートした際の模
式図。FIG. 4 is a schematic view of a metal honeycomb coated with a molecular sieve catalyst.
【図5】コージェライトハニカムに分子篩触媒をコート
した際の模式図。FIG. 5 is a schematic view of a cordierite honeycomb coated with a molecular sieve catalyst.
【図6】本発明触媒と比較触媒の脱硝活性試験結果を示
す図表。FIG. 6 is a chart showing the denitration activity test results of the catalyst of the present invention and the comparative catalyst.
Claims (2)
リケートをメタルハニカム上にコートしてなることを特
徴とする排気ガス処理触媒。1. An exhaust gas treatment catalyst comprising a metal honeycomb coated with a crystalline silicate having a molecular sieve structure containing copper.
工又はハニカム加工を行い、雰囲気炉で加熱して表面を
合金化し、さらに酸化雰囲気でAl2 O3 ウイスカーを
形成させた後、銅を含有した分子篩構造をもつ結晶性シ
リケートにバインダーを添加し、湿式混合して得られた
スラリーを上記Al2 O3 ウイスカーを形成したメタル
ハニカムにウォッシュコートすることを特徴とする排気
ガス処理触媒の製造方法。2. A metal carrier on which Al is vapor-deposited is subjected to corrugation processing or honeycomb processing, the surface is alloyed by heating in an atmosphere furnace, and further Al 2 O 3 whiskers are formed in an oxidizing atmosphere, and then copper is contained. A method for producing an exhaust gas treatment catalyst, characterized in that a binder obtained by adding a binder to crystalline silicate having a molecular sieve structure and wet-mixing the resulting slurry is wash-coated on a metal honeycomb having Al 2 O 3 whiskers formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3011114A JP2909230B2 (en) | 1991-01-31 | 1991-01-31 | Exhaust gas treatment catalyst and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3011114A JP2909230B2 (en) | 1991-01-31 | 1991-01-31 | Exhaust gas treatment catalyst and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH054048A true JPH054048A (en) | 1993-01-14 |
| JP2909230B2 JP2909230B2 (en) | 1999-06-23 |
Family
ID=11768985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3011114A Expired - Fee Related JP2909230B2 (en) | 1991-01-31 | 1991-01-31 | Exhaust gas treatment catalyst and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2909230B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007521946A (en) * | 2004-01-14 | 2007-08-09 | エンゲルハード・コーポレーシヨン | Coated metal substrate |
| KR100925746B1 (en) * | 2006-06-16 | 2009-11-11 | (주)아모레퍼시픽 | Medium pore inorganic composite powder carrying metal oxide in pores and manufacturing method thereof |
| WO2018079569A1 (en) | 2016-10-25 | 2018-05-03 | 日揮触媒化成株式会社 | Chabazite type zeolite for substrate coating |
-
1991
- 1991-01-31 JP JP3011114A patent/JP2909230B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007521946A (en) * | 2004-01-14 | 2007-08-09 | エンゲルハード・コーポレーシヨン | Coated metal substrate |
| KR100925746B1 (en) * | 2006-06-16 | 2009-11-11 | (주)아모레퍼시픽 | Medium pore inorganic composite powder carrying metal oxide in pores and manufacturing method thereof |
| WO2018079569A1 (en) | 2016-10-25 | 2018-05-03 | 日揮触媒化成株式会社 | Chabazite type zeolite for substrate coating |
| US10618040B2 (en) | 2016-10-25 | 2020-04-14 | Jgc Catalysts And Chemicals Ltd. | Chabazite zeolite for substrate coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2909230B2 (en) | 1999-06-23 |
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