JPH0540916A - Magnetic head - Google Patents
Magnetic headInfo
- Publication number
- JPH0540916A JPH0540916A JP30201391A JP30201391A JPH0540916A JP H0540916 A JPH0540916 A JP H0540916A JP 30201391 A JP30201391 A JP 30201391A JP 30201391 A JP30201391 A JP 30201391A JP H0540916 A JPH0540916 A JP H0540916A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- ferromagnetic metal
- metal thin
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 85
- 239000010409 thin film Substances 0.000 claims abstract description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 63
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 55
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 28
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 229910007991 Si-N Inorganic materials 0.000 claims abstract description 4
- 229910006294 Si—N Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 230000035699 permeability Effects 0.000 abstract description 16
- 230000004907 flux Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910000702 sendust Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はビデオテープレコーダ、
ハードディスクドライブ装置等の高密度磁気記録装置に
用いられる磁気ヘッドに関する。BACKGROUND OF THE INVENTION The present invention relates to a video tape recorder,
The present invention relates to a magnetic head used in a high-density magnetic recording device such as a hard disk drive device.
【０００２】[0002]
【従来の技術】従来、ビデオテープレコーダ、ハードデ
ィスクドライブ装置等の高密度磁気記録装置に用いられ
る磁気ヘッドとしては、記録密度の向上を図るために磁
気コアの少なくともギャップ近傍部に強磁性金属薄膜を
配した磁気ヘッドが提案されている。図９（ａ）（ｂ）
（ｃ）は夫々、この磁気ヘッドの媒体対向面を示す図で
ある。図中、１ａ、１ｂはフェライト等の強磁性酸化物
材料よりなるコア半体、２、２は強磁性金属薄膜、３は
磁気ギャップ、４、４はガラスである。2. Description of the Related Art Conventionally, as a magnetic head used in a high density magnetic recording device such as a video tape recorder or a hard disk drive device, a ferromagnetic metal thin film is provided at least in the vicinity of a gap of a magnetic core in order to improve the recording density. Disposed magnetic heads have been proposed. 9 (a) (b)
(C) is a diagram showing the medium facing surface of this magnetic head, respectively. In the figure, 1a and 1b are core halves made of a ferromagnetic oxide material such as ferrite, 2 and 2 are ferromagnetic metal thin films, 3 is a magnetic gap, and 4 and 4 are glass.
【０００３】上記強磁性金属薄膜としては、パーマロイ
（Ｆｅ−Ｎｉ合金）、センダスト（Ｆｅ−Ａｌ−Ｓｉ合
金）、Ｃｏ系アモルファス合金、Ｆｅ−Ｇａ−Ｓｉ合金
等が挙げられるが、磁気ヘッドの記録再生特性の向上の
為には、前記強磁性金属薄膜の飽和磁束密度及び透磁率
をより一層高くする必要がある。しかし乍ら、前述の磁
性材料では、表１に示すように飽和磁束密度Ｂｓが大き
く、且つ透磁率μが高い磁性材料は見当らなかった。即
ち、透磁率μの高いＣｏ系アモルファス合金は、飽和磁
束密度Ｂｓが他の磁性材料に比べて小さく、また、飽和
磁束密度Ｂｓが大きいＦｅ−Ｇａ−Ｓｉ合金は、透磁率
μが他の磁性材料に比べて低い。Examples of the ferromagnetic metal thin film include permalloy (Fe-Ni alloy), sendust (Fe-Al-Si alloy), Co-based amorphous alloy, Fe-Ga-Si alloy, and the like. In order to improve the reproduction characteristics, it is necessary to further increase the saturation magnetic flux density and magnetic permeability of the ferromagnetic metal thin film. However, among the above-mentioned magnetic materials, as shown in Table 1, no magnetic material having a high saturation magnetic flux density Bs and a high magnetic permeability μ was found. That is, a Co-based amorphous alloy having a high magnetic permeability μ has a smaller saturation magnetic flux density Bs than other magnetic materials, and an Fe-Ga-Si alloy having a high magnetic saturation density Bs has a magnetic permeability μ of another magnetic material. Low compared to the material.
【０００４】[0004]
【表１】 [Table 1]
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記従来例の
欠点に鑑み為されたものであり、飽和磁束密度が大き
く、且つ透磁率が高い強磁性金属薄膜を磁気コアに用い
た磁気ヘッドを提供することを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the drawbacks of the conventional example described above, and provides a magnetic head using a ferromagnetic metal thin film having a large saturation magnetic flux density and a high magnetic permeability as a magnetic core. It is intended to be provided.
【０００６】[0006]
【課題を解決するための手段】本発明は磁気回路を構成
する磁気コアのうち少なくともギャップ近傍に強磁性金
属薄膜を有する磁気ヘッドにおいて、前記強磁性金属薄
膜を窒素の含有率が０．５〜３．０ｗｔ％の範囲内、望
ましくは１．０〜２．０ｗｔ％の範囲内であるＦｅ−Ａ
ｌ−Ｓｉ−Ｎ系合金により形成したことを特徴とする。According to the present invention, in a magnetic head having a ferromagnetic metal thin film at least near a gap in a magnetic core forming a magnetic circuit, the ferromagnetic metal thin film has a nitrogen content of 0.5 to 0.5. Fe-A in the range of 3.0 wt%, preferably in the range of 1.0 to 2.0 wt%
It is characterized by being formed of an 1-Si-N alloy.
【０００７】更に、本発明は前記強磁性金属薄膜がＤＣ
対向ターゲット式マグネトロンスパッタリング装置によ
り形成されたものであることを特徴とする。Further, according to the present invention, the ferromagnetic metal thin film is DC.
It is characterized by being formed by a facing target type magnetron sputtering device.
【０００８】[0008]
【作用】窒素の含有率が０．５〜３．０ｗｔ％の範囲
内、望ましくは１．０〜２．０ｗｔ％の範囲内であるＦ
ｅ−Ａｌ−Ｓｉ−Ｎ系合金よりなる強磁性金属薄膜は、
飽和磁束密度が大きく、透磁率が高く、且つ保磁力が小
さく、しかも耐熱性に優れている。The nitrogen content is in the range of 0.5 to 3.0 wt%, preferably 1.0 to 2.0 wt%.
The ferromagnetic metal thin film made of an e-Al-Si-N alloy is
High saturation magnetic flux density, high magnetic permeability, low coercive force, and excellent heat resistance.
【０００９】更に、上記強磁性金属薄膜をＤＣ対向ター
ゲット式マグネトロンスパッタリング装置を用いて形成
した場合、該強磁性金属薄膜は透磁率が一層高くなる。Further, when the ferromagnetic metal thin film is formed by using a DC facing target type magnetron sputtering apparatus, the ferromagnetic metal thin film has a higher magnetic permeability.
【００１０】[0010]
【実施例】以下、本発明の第１実施例について詳細に説
明する。The first embodiment of the present invention will be described in detail below.
【００１１】第１実施例では、磁気ヘッドの磁気コアに
使用される強磁性金属薄膜として、センダスト合金薄膜
に微量の窒素を添加したものを用いた。上記強磁性金属
薄膜の形成は、アルゴンガスに窒素ガスを混入した雰囲
気中でセンダスト薄膜を成膜する、所謂反応性スパッタ
リングにより行った。尚、この第１実施例では、上記反
応性スパッタリングをＲＦ２極マグネトロンスパッタリ
ング装置を用いて行った。In the first embodiment, as the ferromagnetic metal thin film used for the magnetic core of the magnetic head, a sendust alloy thin film to which a slight amount of nitrogen is added is used. The above-mentioned ferromagnetic metal thin film was formed by so-called reactive sputtering, in which a sendust thin film was formed in an atmosphere in which nitrogen gas was mixed with argon gas. In addition, in this 1st Example, the said reactive sputtering was performed using RF 2 pole magnetron sputtering apparatus.
【００１２】上述の反応性スパッタリングにおいて、窒
素ガスの分圧を種々変化させることにより、上記強磁性
金属薄膜中の窒素の含有率を変化させて種々の試料を作
成し、各試料について強磁性金属薄膜の磁気特性（飽和
磁束密度Ｂｓ、透磁率μ、保磁力Ｈｃ）を測定する。そ
の結果を図１に示す。尚、上記磁気特性は強磁性金属薄
膜に６００°Ｃで熱処理を施した後の値である。In the above-mentioned reactive sputtering, various contents of nitrogen in the above-mentioned ferromagnetic metal thin film were changed by changing various partial pressures of nitrogen gas to prepare various samples. The magnetic characteristics (saturation magnetic flux density Bs, magnetic permeability μ, coercive force Hc) of the thin film are measured. The result is shown in FIG. The above magnetic properties are values after the ferromagnetic metal thin film is heat-treated at 600 ° C.
【００１３】この図１から判るように窒素の含有率が
０．５〜３．０ｗｔ％の範囲、望ましくは１．０〜２．
０ｗｔ％の範囲の強磁性金属薄膜は、窒素を含有してい
ない（窒素の含有率が０ｗｔ％）通常のセンダストより
なる強磁性金属薄膜に比べて、飽和磁束密度Ｂｓが大き
く、透磁率μが高く、保磁力Ｈｃが小さく、磁気特性に
優れている。As can be seen from FIG. 1, the nitrogen content is in the range of 0.5 to 3.0 wt%, preferably 1.0 to 2.
The ferromagnetic metal thin film in the range of 0 wt% has a larger saturation magnetic flux density Bs and a higher permeability μ than the ferromagnetic metal thin film made of normal sendust that does not contain nitrogen (nitrogen content is 0 wt%). High, coercive force Hc is small, and magnetic properties are excellent.
【００１４】次に、上述の試料のうち強磁性金属薄膜の
窒素の含有率が、０ｗｔ％、０．５ｗｔ％、１．５ｗｔ
％、３ｗｔ％、１０ｗｔ％の各試料について熱処理を行
った際の熱処理温度に対する強磁性金属薄膜の保磁力Ｈ
ｃの変化を図２、図３、図４、図５、図６に夫々示す。
尚、上記各試料の強磁性金属薄膜の組成比は下記の表２
に示す通りである。Next, among the above-mentioned samples, the nitrogen content of the ferromagnetic metal thin film is 0 wt%, 0.5 wt%, and 1.5 wt.
%, 3 wt%, 10 wt% of each sample, the coercive force H of the ferromagnetic metal thin film with respect to the heat treatment temperature
Changes in c are shown in FIGS. 2, 3, 4, 5, and 6, respectively.
The composition ratio of the ferromagnetic metal thin film of each sample is shown in Table 2 below.
As shown in.
【００１５】[0015]
【表２】 [Table 2]
【００１６】図２〜図６から判るように窒素の含有率が
０．５ｗｔ％、１．５ｗｔ％、３ｗｔ％である強磁性金
属薄膜は、窒素の含有率が０ｗｔ％、１０ｗｔ％である
強磁性金属薄膜と比べて５００〜７００°Ｃの熱処理温
度における保磁力Ｈｃが小さく、耐熱性に優れている。As can be seen from FIGS. 2 to 6, the ferromagnetic metal thin films having nitrogen contents of 0.5 wt%, 1.5 wt% and 3 wt% have strong nitrogen contents of 0 wt% and 10 wt%. The coercive force Hc at the heat treatment temperature of 500 to 700 ° C. is smaller than that of the magnetic metal thin film, and the heat resistance is excellent.
【００１７】以上の結果から判るように、窒素の含有率
が０．５〜３ｗｔ％である金属磁性薄膜は、飽和磁束密
度Ｂｓが大きく、透磁率μが高く、且つ保磁力Ｈｃが小
さく、磁気ヘッドの磁気コアに用いて好適な磁性材料で
ある。しかも、上記強磁性金属薄膜は、耐熱性にも優れ
ており、該薄膜を磁気ヘッドの磁気コアに用いた場合、
磁気ヘッド製造時において加熱溶融される溶着ガラスの
選択を広範囲に行うことが出来る。As can be seen from the above results, the metal magnetic thin film having a nitrogen content of 0.5 to 3 wt% has a high saturation magnetic flux density Bs, a high magnetic permeability μ, a low coercive force Hc, and a magnetic property. It is a magnetic material suitable for use in the magnetic core of the head. Moreover, the ferromagnetic metal thin film has excellent heat resistance, and when the thin film is used for the magnetic core of the magnetic head,
It is possible to select a wide range of fused glass to be heated and melted when manufacturing a magnetic head.
【００１８】次に、本発明の第２実施例について詳細に
説明する。Next, the second embodiment of the present invention will be described in detail.
【００１９】この第２実施例においても、上述の第１実
施例と同様に磁気ヘッドの磁気コアに使用される強磁性
金属薄膜として、センダスト合金薄膜に微量の窒素を添
加したものを用い、該強磁性金属薄膜の形成は反応性ス
パッタリングにより行った。尚、この第２実施例では、
上記反応性スパッタリングをＤＣ対向ターゲット式マグ
ネトロンスパッタリング装置を用いて行った。このＤＣ
対向ターゲット式マグネトロンスパッタリング装置は、
図７に示すように対向して配置した２枚のターゲット
８、９間に強磁界を発生させ、この領域に高密度プラズ
マ領域を形成して、側方に配置した基板１０の表面にス
パッタ粒子を入射させるものである。Also in this second embodiment, a ferromagnetic metal thin film used in the magnetic core of the magnetic head, similar to the first embodiment, is a sendust alloy thin film to which a slight amount of nitrogen is added. The ferromagnetic metal thin film was formed by reactive sputtering. Incidentally, in this second embodiment,
The reactive sputtering was performed using a DC facing target type magnetron sputtering device. This DC
Opposed target type magnetron sputtering system
As shown in FIG. 7, a strong magnetic field is generated between the two targets 8 and 9 facing each other, a high-density plasma region is formed in this region, and sputtered particles are formed on the surface of the substrate 10 placed laterally. Is incident.
【００２０】この第２実施例では、上述のスパッタリン
グ装置において、トータルのガス圧力（アルゴンガス＋
窒素ガス）を３．５ｍＴｏｒｒに一定、アルゴンガスの
流量を５０ＳＣＣＭ（ｃｃ／ｍ）に一定とし、窒素ガス
の流量を変えて、窒素ガスの分圧（＝窒素ガスの流量／
（アルゴンガスの流量＋窒素ガスの流量）×１００％）
を種々変化させることにより、上記強磁性金属薄膜中の
窒素の含有率を変化させて種々の試料を作成し、各試料
について強磁性金属薄膜の磁気特性を第１実施例と同様
に測定した。その結果を膜組成と合わせて表３及び図８
に示す。尚、上記磁気特性は強磁性金属薄膜に無磁界真
空中５５０°Ｃで１時間熱処理を施した後の値である。In the second embodiment, the total gas pressure (argon gas + argon gas +
(Nitrogen gas) is kept constant at 3.5 mTorr, the flow rate of argon gas is kept constant at 50 SCCM (cc / m), the flow rate of nitrogen gas is changed, and the partial pressure of nitrogen gas (= flow rate of nitrogen gas /
(Flow rate of argon gas + flow rate of nitrogen gas) x 100%)
Was changed to change the nitrogen content in the ferromagnetic metal thin film to prepare various samples, and the magnetic characteristics of the ferromagnetic metal thin films were measured for each sample in the same manner as in the first embodiment. The results are shown in Table 3 and FIG. 8 together with the film composition.
Shown in. The above-mentioned magnetic properties are values obtained by subjecting the ferromagnetic metal thin film to a heat treatment at 550 ° C. for 1 hour in a non-magnetic vacuum.
【００２１】[0021]
【表３】 [Table 3]
【００２２】また、参考までに、上述のスパッタリング
における窒素流量、窒素分圧、及び強磁性金属薄膜中の
窒素含有率の関係を表４に示す。尚、この時の強磁性金
属薄膜の膜厚は２μｍである。For reference, Table 4 shows the relationship between the nitrogen flow rate, the nitrogen partial pressure, and the nitrogen content in the ferromagnetic metal thin film in the above-described sputtering. The thickness of the ferromagnetic metal thin film at this time is 2 μm.
【００２３】[0023]
【表４】 [Table 4]
【００２４】この図８から判るように、第２実施例にお
いても、窒素の含有率が０．５〜３．０ｗｔ％の範囲、
望ましくは１．０〜２．０ｗｔ％の範囲の強磁性金属薄
膜は、窒素を含有していない（窒素の含有率が０ｗｔ
％）通常のセンダストよりなる強磁性金属薄膜に比べ
て、飽和磁束密度Ｂｓが大きく、透磁率μが高く、保磁
力Ｈｃが小さく、磁気特性に優れている。また、ＲＦ２
極マグネトロンスパッタリング装置を用いて強磁性金属
薄膜を形成した第１実施例の場合、該強磁性金属薄膜の
透磁率μは３０００〜４５００であり、窒素を含有して
いない場合の１．５〜２．２５倍程度であるのに対し
て、ＤＣ対向ターゲット式マグネトロンスパッタリング
装置を用いて強磁性金属薄膜を形成した第２実施例の場
合、該強磁性金属薄膜の透磁率μは６０００〜１０００
０であり、窒素を含有していない場合の２〜３．３倍程
度と非常に高く、ＤＣ対向ターゲット式マグネトロンス
パッタリング装置を用いて形成した第２実施例の強磁性
金属磁性薄膜は、透磁率の点で第１実施例よりも磁気特
性が優れていることが判る。As can be seen from FIG. 8, also in the second embodiment, the nitrogen content is in the range of 0.5 to 3.0 wt%,
Desirably, the ferromagnetic metal thin film in the range of 1.0 to 2.0 wt% does not contain nitrogen (the content of nitrogen is 0 wt%.
%) Saturation magnetic flux density Bs is large, magnetic permeability μ is high, coercive force Hc is small, and magnetic characteristics are excellent as compared with a ferromagnetic metal thin film made of normal sendust. Also, RF2
In the case of the first embodiment in which the ferromagnetic metal thin film is formed by using the polar magnetron sputtering device, the magnetic permeability μ of the ferromagnetic metal thin film is 3000 to 4500, and 1.5 to 2 in the case of not containing nitrogen. In the case of the second embodiment in which the ferromagnetic metal thin film is formed by using the DC facing target type magnetron sputtering device, the magnetic permeability μ of the ferromagnetic metal thin film is 6000 to 1000.
The ferromagnetic metal magnetic thin film of the second embodiment formed by using the DC facing target type magnetron sputtering apparatus has a magnetic permeability of 0, which is extremely high, about 2 to 3.3 times that of the case of not containing nitrogen. From this point, it can be seen that the magnetic characteristics are superior to those of the first embodiment.
【００２５】また、窒素の含有率が０．５〜３．０ｗｔ
％の第２実施例の強磁性金属磁性薄膜に、６００°Ｃま
での温度で無磁界真空中で熱処理を施した場合において
も、保磁力Ｈｃ、透磁率μとも大きな劣化は無く、耐熱
性にも優れていることが判る。The nitrogen content is 0.5 to 3.0 wt.
%, The coercive force Hc and the magnetic permeability μ are not significantly deteriorated even when the ferromagnetic metal magnetic thin film of the second embodiment is heat-treated at a temperature up to 600 ° C. in a non-magnetic vacuum, and the heat resistance is high. It turns out that is also excellent.
【００２６】尚、上述の第１、第２実施例における窒素
の含有率が０．５〜３．０ｗｔ％の強磁性金属薄膜にお
いて、Ｃｒ、Ｔｉ等の金属元素を添加することにより、
膜の耐食性を向上させることも可能である。By adding a metal element such as Cr or Ti to the ferromagnetic metal thin film having a nitrogen content of 0.5 to 3.0 wt% in the first and second embodiments described above,
It is also possible to improve the corrosion resistance of the film.
【００２７】また、飽和磁束密度Ｂｓを更に大きくした
い場合には、例えば、Ｆｅ（８５．５ｗｔ％）−Ａｌ
（４．５ｗｔ％）−Ｓｉ（８．５ｗｔ％）−Ｎ（１．５
ｗｔ％）等のように、Ａｌ、Ｓｉの組成を若干減少させ
ればよい。If it is desired to further increase the saturation magnetic flux density Bs, for example, Fe (85.5 wt%)-Al
(4.5 wt%)-Si (8.5 wt%)-N (1.5
wt%), etc., and the composition of Al and Si may be slightly reduced.
【００２８】尚、本発明の強磁性金属薄膜は図９
（ａ）、（ｂ）、（ｃ）に示す構造の磁気ヘッドに限ら
ず、図１０、図１１に示すような積層薄膜型の磁気ヘッ
ドや薄膜磁気ヘッド等の様々な構造の磁気ヘッドに用い
て有効であることは言うまでもない。尚、図１０、１１
において、５、５は非磁性基板、６、６は強磁性金属薄
膜２、２と絶縁薄膜７、７との積層薄膜である。The ferromagnetic metal thin film of the present invention is shown in FIG.
Not limited to the magnetic heads having the structures shown in (a), (b), and (c), it is used for magnetic heads having various structures such as a laminated thin film magnetic head and a thin film magnetic head as shown in FIGS. Needless to say, it is effective. Incidentally, FIGS.
5 and 5 are non-magnetic substrates, and 6 and 6 are laminated thin films of ferromagnetic metal thin films 2 and 2 and insulating thin films 7 and 7.
【００２９】[0029]
【発明の効果】本発明によれば、高密度記録に適し、し
かも製造工程を幅広く選択出来る耐熱性に優れた磁気ヘ
ッドを提供し得る。According to the present invention, it is possible to provide a magnetic head which is suitable for high density recording and which has a wide range of manufacturing steps and which is excellent in heat resistance.
【図１】強磁性金属薄膜の窒素の含有率に対する磁気特
性の変化を示す図である。FIG. 1 is a diagram showing changes in magnetic characteristics with respect to a nitrogen content in a ferromagnetic metal thin film.
【図２】熱処理温度に対する強磁性金属薄膜の保磁力Ｈ
ｃの変化を示す図である。FIG. 2 Coercive force H of ferromagnetic metal thin film with respect to heat treatment temperature
It is a figure which shows the change of c.
【図３】熱処理温度に対する強磁性金属薄膜の保磁力Ｈ
ｃの変化を示す図である。FIG. 3 Coercive force H of ferromagnetic metal thin film with respect to heat treatment temperature
It is a figure which shows the change of c.
【図４】熱処理温度に対する強磁性金属薄膜の保磁力Ｈ
ｃの変化を示す図である。FIG. 4 Coercive force H of ferromagnetic metal thin film with respect to heat treatment temperature
It is a figure which shows the change of c.
【図５】熱処理温度に対する強磁性金属薄膜の保磁力Ｈ
ｃの変化を示す図である。FIG. 5: Coercive force H of ferromagnetic metal thin film with respect to heat treatment temperature
It is a figure which shows the change of c.
【図６】熱処理温度に対する強磁性金属薄膜の保磁力Ｈ
ｃの変化を示す図である。FIG. 6 Coercive force H of ferromagnetic metal thin film with respect to heat treatment temperature
It is a figure which shows the change of c.
【図７】ＤＣ対向ターゲット式マグネトロンスパッタリ
ング装置の概略を示す図である。FIG. 7 is a diagram schematically showing a DC facing target type magnetron sputtering apparatus.
【図８】強磁性金属薄膜の窒素の含有率に対する磁気特
性の変化を示す図である。FIG. 8 is a diagram showing changes in magnetic properties of a ferromagnetic metal thin film with respect to the nitrogen content.
【図９】磁気ヘッドの媒体摺接面を示す図である。FIG. 9 is a diagram showing a medium sliding contact surface of a magnetic head.
【図１０】磁気ヘッドの外観を示す斜視図である。FIG. 10 is a perspective view showing the appearance of a magnetic head.
【図１１】磁気ヘッドの外観を示す斜視図である。FIG. 11 is a perspective view showing the appearance of a magnetic head.
１ａ、１ｂ コア半体 ２ 強磁性金属薄膜 ３ 磁気ギャップ ６ 積層薄膜 1a, 1b Core half 2 Ferromagnetic metal thin film 3 Magnetic gap 6 Laminated thin film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山野 孝雄 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 清水 司 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Takao Yamano 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor Tsuyoshi Shimizu 2-18, Keihan Hondori, Moriguchi City, Osaka Sanyo Denki Within the corporation
Claims (3)
くともギャップ近傍に強磁性金属薄膜を有する磁気ヘッ
ドにおいて、前記強磁性金属薄膜を窒素の含有率が０．
５〜３．０ｗｔ％の範囲内であるＦｅ−Ａｌ−Ｓｉ−Ｎ
系合金により形成したことを特徴とする磁気ヘッド。1. A magnetic head having a ferromagnetic metal thin film at least in the vicinity of a gap in a magnetic core forming a magnetic circuit, wherein the ferromagnetic metal thin film has a nitrogen content of 0.
Fe-Al-Si-N in the range of 5 to 3.0 wt%
A magnetic head characterized by being formed of a system alloy.
１．０〜２．０ｗｔ％の範囲内であることを特徴とする
請求項１記載の磁気ヘッド。2. The magnetic head according to claim 1, wherein the nitrogen content of the ferromagnetic metal thin film is in the range of 1.0 to 2.0 wt%.
ト式マグネトロンスパッタリング装置により形成された
ものであることを特徴とする請求項１記載の磁気ヘッ
ド。3. The magnetic head according to claim 1, wherein the ferromagnetic metal thin film is formed by a DC facing target type magnetron sputtering apparatus.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31347390 | 1990-11-19 | ||
| JP2-313473 | 1990-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0540916A true JPH0540916A (en) | 1993-02-19 |
Family
ID=18041729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30201391A Pending JPH0540916A (en) | 1990-11-19 | 1991-11-18 | Magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0540916A (en) |
-
1991
- 1991-11-18 JP JP30201391A patent/JPH0540916A/en active Pending
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