JPH0541368A - Cleaning method for surface of base substance to form film on - Google Patents
Cleaning method for surface of base substance to form film onInfo
- Publication number
- JPH0541368A JPH0541368A JP19648191A JP19648191A JPH0541368A JP H0541368 A JPH0541368 A JP H0541368A JP 19648191 A JP19648191 A JP 19648191A JP 19648191 A JP19648191 A JP 19648191A JP H0541368 A JPH0541368 A JP H0541368A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- plasma
- hydrogen
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000126 substance Substances 0.000 title claims abstract description 17
- 238000004140 cleaning Methods 0.000 title claims description 20
- 239000007789 gas Substances 0.000 claims abstract description 44
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 22
- 150000002367 halogens Chemical class 0.000 claims abstract description 22
- -1 hydrogen compound Chemical class 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 72
- 230000002411 adverse Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 239000000356 contaminant Substances 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002634 lipophilic molecules Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、各種膜を基体上に形成
させて、例えば基体の耐摩耗性や耐食性を改善させた
り、あるいは、基体上に機能性薄膜を形成させることで
半導体分野等での応用を可能にさせる際に、膜と基体と
の密着性を改善させたり、膜の特性を劣化させないため
に行う膜形成基体の表面清浄化方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductors by forming various films on a substrate to improve the wear resistance and corrosion resistance of the substrate or forming a functional thin film on the substrate. The present invention relates to a method for cleaning the surface of a film-forming substrate, which is performed so as to improve the adhesion between the film and the substrate or prevent the characteristics of the film from deteriorating when enabling the application in the above.
【０００２】[0002]
【従来の技術】現在、各種の膜を基体上に形成させて、
基体の特性を改善させたり、あるいは膜のもつ機能を利
用しようとする試みが盛んに行われている。例えば基体
の上に高硬度の膜を形成させることにより、基体の耐摩
耗性を向上させたり、各種保護膜を形成させることによ
り、基体の耐食性を改善させる応用が急速に広まってい
る。また、各種機能をもった膜を基体上に形成させて、
例えば、ガラス基体上に発光する膜を形成させて発光素
子として用いたり、トランジスタ機能をもつ膜を形成さ
せて半導体素子として利用したりすることも、半導体分
野において盛んに行われている。2. Description of the Related Art Currently, various films are formed on a substrate,
Attempts have been actively made to improve the characteristics of the substrate or utilize the functions of the film. For example, the application of improving the wear resistance of the substrate by forming a film of high hardness on the substrate and improving the corrosion resistance of the substrate by forming various protective films are rapidly spreading. In addition, by forming a film with various functions on the substrate,
For example, forming a film that emits light on a glass substrate and using it as a light emitting element, or forming a film having a transistor function and using it as a semiconductor element has been actively performed in the semiconductor field.
【０００３】この際、膜を基体上に形成させる場合にお
いて、基体の膜形成面が汚染されていると、膜の基体と
の密着性が劣り、実用化させる際に剥離を生じたり、ま
た、当該汚染物質が膜の結晶性を阻害したり、膜内に拡
散して当該膜の特性を劣化させたりする。そのため、膜
を形成する前に、水、溶剤等を用いて基体を湿式洗浄
し、基体の汚れを除去した後、当該基体上に膜を形成す
ることが一般に行われている。At this time, when the film is formed on the substrate, if the film-forming surface of the substrate is contaminated, the adhesion of the film to the substrate is poor and peeling occurs when it is put into practical use. The contaminants impede the crystallinity of the film or diffuse into the film to deteriorate the properties of the film. Therefore, it is generally performed that the substrate is wet-cleaned with water, a solvent, or the like before forming the film to remove stains on the substrate, and then the film is formed on the substrate.
【０００４】また、この湿式法に替えて、プラズマを利
用した清浄化法も提案されている。これは例えばＣ
Ｆ4 、ＨＦのような化学的に活性なハロゲン元素よりな
る化合物ガスをプラズマにし、それを基体に照射して、
乾式によって基体を清浄化するものである。Further, a cleaning method using plasma has been proposed in place of the wet method. This is for example C
A compound gas composed of a chemically active halogen element such as F 4 and HF is turned into plasma, and the plasma is irradiated to the substrate,
The substrate is cleaned by a dry method.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前記湿
式洗浄では、汚染物質の種類によっては完全に除去でき
ないものがあり、例えば、水は油脂のような親油性の化
合物に対する洗浄力が劣る。そのため、親油性の汚れに
対しては界面活性剤やアルカリ剤を併用することによっ
て対処するが、今度は逆にそれら界面活性剤やアルカリ
剤が基体に吸着され、洗浄後も基体上に残存し、新たな
汚染の原因になることがある。また、アルカリ性、酸性
の溶剤、またはその他の溶剤を用いて汚染が除去できた
としても、それら洗浄中に基体が変質したりする恐れが
ある。さらに、これら湿式の洗浄は、洗浄液、洗浄器具
等の汚れが基体に付着する危険性を常にもちあわせてお
り、また、乾燥時にいわゆるシミといった汚染を新たに
形成する困難も生じてくる。However, there are some contaminants that cannot be completely removed by the wet cleaning, depending on the type of contaminants. For example, water has a poor cleaning power for lipophilic compounds such as fats and oils. Therefore, lipophilic stains are dealt with by using a surfactant or alkali agent together, but this time, on the contrary, these surfactants and alkali agents are adsorbed on the substrate and remain on the substrate even after cleaning. , May cause new pollution. Even if the contamination can be removed by using an alkaline or acidic solvent or another solvent, the substrate may be deteriorated during the cleaning. Further, these wet cleanings always have a risk that stains such as cleaning liquids and cleaning tools adhere to the substrate, and it is difficult to newly form stains such as so-called stains during drying.
【０００６】このように、基体上に微量に吸着した有機
物や水分を湿式洗浄によって完全に除去させるのは困難
である。この点、前記プラズマによる清浄化法では、湿
式法における問題点の幾つかを克服することができる。
しかし、プラズマを利用する浄化法では、例えばＣＦ4
のガスを利用する場合には、様々な放電手段によってガ
スを解離させ、その結果生じたＣＦ3 + イオンによっ
て、基体上の酸化物等の汚染物質を除去させようとする
ものであるが、フッ素元素を含有するガスの化学的な高
活性は、基体に対しても作用し、そのため基体自身がエ
ッチングされたり、腐食したりする危険性を有してお
り、洗浄に有効な手段であるにも拘らず、その実用化は
困難なものになっている。As described above, it is difficult to completely remove a small amount of organic substances and water adsorbed on the substrate by wet cleaning. In this respect, the plasma cleaning method can overcome some of the problems in the wet method.
However, in the purification method using plasma, for example, CF 4
In the case of using the above-mentioned gas, the gas is dissociated by various discharge means, and CF 3 + ions generated as a result try to remove contaminants such as oxides on the substrate. The high chemical activity of the gas containing the element also acts on the substrate, and there is a risk that the substrate itself will be etched or corroded, which is an effective means for cleaning. Nevertheless, its practical application has become difficult.
【０００７】そこで本発明は、基体の膜形成面を基体に
悪影響をおよぼすことなく清浄化できる膜形成基体の表
面清浄化方法を提供しようとするものである。Therefore, the present invention is intended to provide a method for cleaning the surface of a film-formed substrate which can clean the film-formed surface of the substrate without adversely affecting the substrate.
【０００８】[0008]
【課題を解決するための手段】本発明者は前記目的を達
成するため研究を重ね、前記プラズマによる乾式浄化法
において、例えば、フッ素元素よりなるガス、例えばＨ
ＦやＣＦ4 をプラズマによってイオン化した場合、その
際生成されるＣＦ3 + 等の活性種とフッ素ラジカルの量
の割合が基体への損傷や、基体上の汚染物質の除去速度
を決定すること、従って、これら量を制御することがで
きれば、前記基体への損傷や、基体上の汚染物質の除去
速度を制御できることに着目した。さらに研究の結果、
例えば前記フッ素元素よりなるガスのプラズマを生成さ
せる際に、水素ガスあるいは水素化合物ガスを導入し、
それがイオン化することによって生成した水素イオンと
前記フッ素ラジカルを結合させ、前記ＣＦ3 + 等の活性
種とフッ素ラジカルの量の割合を調整すれば、基体への
悪影響なく、且つ、汚染物質の除去をコントロールでき
ることを見出し、本発明を完成した。Means for Solving the Problems The present inventor has conducted extensive research to achieve the above object, and in the dry purification method using plasma, for example, a gas containing elemental fluorine such as H 2
When F or CF 4 is ionized by plasma, the ratio of the amount of active species such as CF 3 + and fluorine radicals generated at that time to damage to the substrate and the removal rate of contaminants on the substrate are determined. Therefore, it has been noted that if these amounts can be controlled, damage to the substrate and the removal rate of contaminants on the substrate can be controlled. As a result of further research,
For example, when generating the plasma of the gas consisting of the fluorine element, hydrogen gas or hydrogen compound gas is introduced,
By binding the hydrogen radicals generated by the ionization thereof with the fluorine radicals and adjusting the ratio of the amount of the active species such as CF 3 + and the fluorine radicals, there is no adverse effect on the substrate and the removal of contaminants. The present invention has been completed by finding that the above can be controlled.
【０００９】すなわち本発明は、基体に膜を被覆するに
当たり、当該基体の膜被覆面にハロゲン元素単体あるい
はハロゲン元素よりなる化合物のガスをプラズマ化させ
て照射すると同時に、該プラズマ中へ水素あるいは水素
化合物よりなるガスを導入し、前記ハロゲン元素単体あ
るいはハロゲン元素よりなる化合物のガスと水素あるい
は水素化合物のガスのプラズマ中での混合量を制御しな
がら、当該基体を清浄化させることを特徴とする膜形成
基体の表面清浄化方法を提供するものである。That is, according to the present invention, when a film is coated on a substrate, the film-coated surface of the substrate is irradiated with a gas of a halogen element simple substance or a compound consisting of a halogen element in a plasma, and at the same time hydrogen or hydrogen is introduced into the plasma. A gas comprising a compound is introduced, and the substrate is cleaned while controlling the mixing amount of the halogen element simple substance or the compound gas comprising the halogen element and hydrogen or a gas of a hydrogen compound in plasma. A method for cleaning the surface of a film-forming substrate is provided.
【００１０】前記ハロゲン元素よりなるガスあるいはハ
ロゲン元素よりなる化合物ガスとしては、フッ素、塩
素、臭素等の単体のガスあるいはそれらよりなる化合物
（ＣＣ１4 等）や炭化水素化合物（ＣＦ4 、Ｃ2Ｆ6 、
ＣＨＦ3 等）あるいはケイ素化合物（ＳＦ6 等）、水素
化合物（ＨＦ等）等任意のものを用いることができる。
また、水素あるいは水素化合物のガスには例えばＨ2 、
Ｈ2 Ｏ等任意のものを用いることができる。[0010] As the compound gas composed of a gas or a halogen element consisting of the halogen element, fluorine, chlorine, single gas or a compound consisting of those such as bromine (CC1 4, etc.) and hydrocarbon compound (CF 4, C 2 F 6 ,
CHF 3 or the like), a silicon compound (SF 6 or the like), a hydrogen compound (HF or the like), or the like can be used.
Further, hydrogen or a gas of a hydrogen compound is, for example, H 2 ,
Any material such as H 2 O can be used.
【００１１】また、前記ガスをプラズマ化させる手法は
特に限定されず、高周波、直流、マイクロ波、あるいは
ＥＣＲ等による任意のものを採用できる。The method for converting the gas into plasma is not particularly limited, and any method using high frequency, direct current, microwave, ECR or the like can be adopted.
【００１２】[0012]
【作用】本発明方法によると、ハロゲン元素単体あるい
はハロゲン元素よりなる化合物のガスをプラズマ化でき
る装置内に基体が設置され、該装置内にハロゲン元素単
体あるいはハロゲン元素よりなる化合物のガスが所定量
導入され、プラズマ化される。基体の膜被覆面はこのプ
ラズマに曝され、同時に、該装置内に水素または水素化
合物よりなるガスが所定量導入され、かくして、基体の
膜被覆面が、基体自身に悪影響なく、浄化される。According to the method of the present invention, the substrate is placed in an apparatus capable of converting a gas of a halogen element simple substance or a compound of a halogen element into plasma, and a predetermined amount of the halogen element simple substance or a compound of a halogen element compound is placed in the apparatus. It is introduced and turned into plasma. The film-coated surface of the substrate is exposed to this plasma, and at the same time, a predetermined amount of hydrogen or a gas containing a hydrogen compound is introduced into the apparatus, and thus the film-coated surface of the substrate is cleaned without adversely affecting the substrate itself.
【００１３】[0013]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明方法を実施する装置の１例を示して
いる。この装置において、１はコイル、２は膜形成用の
基体、３はそれを納める容器、４は真空排気装置、５は
コイル１に接続した高周波電源である。この例では、石
英やガラスでできた容器３の回りにコイル１が巻いてあ
り、４の真空排気装置にて、容器３内が所定の真空度に
真空排気された後、６のガス導入口よりハロゲン元素単
体ガスあるいはハロゲン元素化合物ガスが所定の量導入
される。その後、電源５によりより高周波電圧が印加さ
れる。その際、容器内で生じる高周波放電によって前記
ガスがプラズマ化、基体２の膜形成面がこのプラズマに
曝される。それと同時に７のガス導入口より水素ガスあ
るいは水素化合物ガスが同じく所定の量導入される。か
くして、基体２の膜被覆面が、基体２に悪影響無く、制
御性良く清浄化される。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an example of an apparatus for carrying out the method of the present invention. In this apparatus, 1 is a coil, 2 is a substrate for film formation, 3 is a container for containing it, 4 is a vacuum exhaust device, and 5 is a high frequency power source connected to the coil 1. In this example, the coil 1 is wound around a container 3 made of quartz or glass, and the inside of the container 3 is evacuated to a predetermined vacuum degree by a vacuum exhaust device 4 and then a gas inlet 6 A predetermined amount of halogen element gas or halogen element compound gas is introduced. After that, a higher frequency voltage is applied by the power source 5. At this time, the gas is turned into plasma by the high-frequency discharge generated in the container, and the film forming surface of the substrate 2 is exposed to this plasma. At the same time, a predetermined amount of hydrogen gas or hydrogen compound gas is also introduced from the gas introduction port 7. Thus, the film-coated surface of the substrate 2 is cleaned with good controllability without adversely affecting the substrate 2.
【００１４】以下、具体的な実施例について説明する。 実施例１ 鉄（純度３Ｎ、寸法２５×２５×１ｔ、表面粗度Ｒａ＝
１０００Å）よりなる基体を図１に示す容器３内に納
め、容器内を５×１０-7ｔｏｒｒの真空度に保持した。
その後、容器内にＣＦ4 ガス（純度３Ｎ）を容器内の圧
力が２×１０-5ｔｏｒｒになるまで導入し、高周波コイ
ル１と高周波電源５を用いて容器内に高周波放電を生じ
させ、前記基体をＣＦ4 ガスをプラズマ化させたものに
曝した。また、これと同時に、容器内のＣＦ3 + イオン
とフッ素ラジカルの状態をプラズマ発光分光分析器によ
りモニターし、前記フッ素ラジカルの発光ピークが消失
するように水素ガス（純度４Ｎ）を容器内に導入した。
このようにして、前記基体の表面を３分間洗浄し、その
後、Ｘ線光電子分光器（ＸＰＳ）にて、基体表面の清浄
度を分析したところ、洗浄前は炭素（Ｃ）元素の存在を
示す光電子ピークが確認されていたのに対し、洗浄後は
鉄元素以外の元素からの光電子ピークが確認されず、ま
た、洗浄後の基体の表面粗度も変化していないことが確
認され、本実施例によって基体の表面が損傷されること
無く、清浄化されたことがわかった。Specific examples will be described below. Example 1 Iron (purity 3N, size 25 × 25 × 1t, surface roughness Ra =
A substrate consisting of 1000Å) was placed in a container 3 shown in FIG. 1, and the inside of the container was maintained at a vacuum degree of 5 × 10 −7 torr.
After that, CF 4 gas (purity 3N) is introduced into the container until the pressure in the container reaches 2 × 10 −5 torr, and high frequency discharge is generated in the container by using the high frequency coil 1 and the high frequency power source 5. The substrate was exposed to a plasmaized CF 4 gas. At the same time, the states of CF 3 + ions and fluorine radicals in the container are monitored by a plasma emission spectroscopy analyzer, and hydrogen gas (purity 4N) is introduced into the container so that the emission peak of the fluorine radicals disappears. did.
In this way, the surface of the substrate was washed for 3 minutes, and then the cleanliness of the substrate surface was analyzed with an X-ray photoelectron spectrometer (XPS). While a photoelectron peak was confirmed, no photoelectron peaks from elements other than iron were confirmed after washing, and it was also confirmed that the surface roughness of the substrate after washing did not change. By way of example it was found that the surface of the substrate was cleaned without damage.
【００１５】比較例１ 実施例１と同じ基体を用い、実施例１と同じく図１の容
器を用いて、基体をＣＦ4 ガスをプラズマ化させたもの
に３分間曝した。その後、実施例と同じく、ＥＳＣＡに
よって基体表面の元素分析をしたところ、鉄元素以外か
らの光電子ピークが確認されず、基体が清浄化されたこ
とが確認されたが、基体の表面粗度がＲａ＝５０００Å
に変化し、基体の表面が損傷されたことが確認された。Comparative Example 1 Using the same substrate as in Example 1, and using the container shown in FIG. 1 as in Example 1, the substrate was exposed to a plasmaized CF 4 gas for 3 minutes. After that, when the elemental analysis of the substrate surface was performed by ESCA as in the example, it was confirmed that the photoelectron peaks other than the iron element were not confirmed and the substrate was cleaned, but the surface roughness of the substrate was Ra. = 5000Å
It was confirmed that the surface of the substrate was damaged.
【００１６】このように、比較例１のものは、実施例１
と異なり、基体の損傷を防ぐことができなかった。 比較例２ 比較例１と同様にして、図１の容器を用いて、基体をＣ
Ｆ4 ガスをプラズマ化させたものに３０秒間曝した。そ
の後、実施例と同じく、洗浄後の表面粗度を測定したと
ころ、Ｒａ＝１０００Åは変化していなかったものの、
ＥＳＣＡによって基体表面の元素分析をしたところ、洗
浄前より確認されていた炭素元素からの光電子ピークが
確認され、基体の清浄化が不十分であった。As described above, the comparative example 1 is the same as the example 1
Unlike the above, damage to the substrate could not be prevented. Comparative Example 2 In the same manner as in Comparative Example 1, using the container of FIG.
F 4 gas was exposed to plasma for 30 seconds. After that, when the surface roughness after washing was measured as in the example, Ra = 1000 Å was not changed, but
Elemental analysis of the surface of the substrate by ESCA confirmed that a photoelectron peak from the carbon element, which had been confirmed before the cleaning, was confirmed, and the cleaning of the substrate was insufficient.
【００１７】このように、基体表面の損傷が防げるよう
に時間をコントロールしたものは、清浄化度が不十分な
ものとなった。As described above, the one whose time was controlled so as to prevent damage to the surface of the substrate had an insufficient degree of cleanliness.
【００１８】[0018]
【発明の効果】本発明方法によれば、次の利点がある。 １．化学的活性の高いハロゲン元素よりなるガスをプラ
ズマ化して基体に照射させるため、基体上の汚染物質が
効率良く除去される。 ２．水素あるいは水素化合物のガスを前記プラズマ中に
導入し、水素イオンを生成させることにより、該水素イ
オンとハロゲン元素のラジカル種と結合させ、基体への
損傷あるいは汚染物質の除去能力をコントロールするこ
とができる。 ３．乾式の清浄化方法であるため、従来の湿式洗浄化法
のようなシミの発生、表面への水分の吸着、あるいは洗
浄器具からの汚染といった問題が発生しない。The method of the present invention has the following advantages. 1. Since a gas containing a halogen element having high chemical activity is turned into plasma and irradiated onto the substrate, contaminants on the substrate are efficiently removed. 2. By introducing a gas of hydrogen or a hydrogen compound into the plasma and generating hydrogen ions, the hydrogen ions and the radical species of the halogen element are combined with each other to control the ability to damage the substrate or remove contaminants. it can. 3. Since it is a dry cleaning method, problems such as the generation of spots, the adsorption of water on the surface, and the contamination from cleaning tools, unlike the conventional wet cleaning method, do not occur.
【図１】本発明方法の実施に用いる装置例の概略構成を
示す図である。FIG. 1 is a diagram showing a schematic configuration of an example of an apparatus used for carrying out a method of the present invention.
１ コイル ２ 基体 ３ 容器 ４ 高周波電源 ６ ハロゲン元素単体又はハロゲン元素化合物のガス導
入口 ７ 水素又は水素化合物のガス導入口1 Coil 2 Substrate 3 Container 4 High-frequency power source 6 Gas introduction port of halogen element simple substance or halogen element compound 7 Hydrogen or hydrogen compound gas introduction port
───────────────────────────────────────────────────── フロントページの続き (72)発明者 江部 明憲 京都市右京区梅津高畝町47番地 日新電機 株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akinori Ebe 47 Umezu Takaunecho, Ukyo-ku, Kyoto City Nissin Electric Co., Ltd.
Claims (1)
の膜被覆面にハロゲン元素単体あるいはハロゲン元素よ
りなる化合物のガスをプラズマ化させて照射すると同時
に、該プラズマ中へ水素あるいは水素化合物よりなるガ
スを導入し、前記ハロゲン元素単体あるいはハロゲン元
素よりなる化合物のガスと水素あるいは水素化合物のガ
スのプラズマ中での混合量を制御しながら、当該基体を
清浄化させることを特徴とする膜形成基体の表面清浄化
方法。1. When coating a film on a substrate, the film-coated surface of the substrate is irradiated with a gas of a simple substance of a halogen element or a compound containing a halogen element by plasma irradiation, and at the same time, hydrogen or a hydrogen compound is introduced into the plasma. A film-forming substrate, wherein a gas is introduced to clean the substrate while controlling a mixing amount of a gas of the halogen element alone or a compound of the halogen element and hydrogen or a gas of a hydrogen compound in plasma. Surface cleaning method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19648191A JPH0541368A (en) | 1991-08-06 | 1991-08-06 | Cleaning method for surface of base substance to form film on |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19648191A JPH0541368A (en) | 1991-08-06 | 1991-08-06 | Cleaning method for surface of base substance to form film on |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0541368A true JPH0541368A (en) | 1993-02-19 |
Family
ID=16358510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19648191A Withdrawn JPH0541368A (en) | 1991-08-06 | 1991-08-06 | Cleaning method for surface of base substance to form film on |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0541368A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6136386A (en) * | 1996-06-27 | 2000-10-24 | Nissin Electric Co., Ltd. | Method of coating polymer or glass objects with carbon films |
| US6893720B1 (en) | 1997-06-27 | 2005-05-17 | Nissin Electric Co., Ltd. | Object coated with carbon film and method of manufacturing the same |
-
1991
- 1991-08-06 JP JP19648191A patent/JPH0541368A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6136386A (en) * | 1996-06-27 | 2000-10-24 | Nissin Electric Co., Ltd. | Method of coating polymer or glass objects with carbon films |
| US6893720B1 (en) | 1997-06-27 | 2005-05-17 | Nissin Electric Co., Ltd. | Object coated with carbon film and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6692903B2 (en) | Substrate cleaning apparatus and method | |
| JP4648392B2 (en) | Method for wet cleaning a quartz surface of a component for a plasma processing chamber | |
| KR100603654B1 (en) | Etching and Cleaning Method Using Carbonyl Fluorinated Compound | |
| TWI427684B (en) | Method and apparatus for on-site substrate processing | |
| JP2674488B2 (en) | Dry etching chamber cleaning method | |
| JPH09186143A (en) | Method and apparatus for cleaning byproducts from plasma chamber surfaces | |
| JPH0831451B2 (en) | Cleaning method for plasma reactor | |
| KR20010032030A (en) | Self-cleaning etch process | |
| US20060157079A1 (en) | Method for cleaning substrate surface | |
| JPH09232299A (en) | In-situ cleaning of CVD equipment | |
| KR970003887B1 (en) | Gas phase cleaners for removing metal-containing contaminants from integrated circuit assemblies and methods of using the same | |
| JPH0779103B2 (en) | Etching method | |
| KR100630483B1 (en) | Hydrofluorocarbon Etching Compounds Reduce Global Warming Impact | |
| JP3876983B2 (en) | Pre-cleaning method for polymer residues | |
| JP2012243958A (en) | Plasma processing method | |
| JP2003023072A (en) | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus | |
| JPH0555184A (en) | Cleaning method | |
| JP3327492B2 (en) | Apparatus and method for removing gas phase dust from substrate surface, process apparatus and process line | |
| JPH0541368A (en) | Cleaning method for surface of base substance to form film on | |
| JP3358808B2 (en) | How to insulate organic substances from substrates | |
| US20050136662A1 (en) | Method to remove fluorine residue from bond pads | |
| JPH0513394A (en) | Cleaning method for surface of substrate to form film thereon | |
| JPH11323576A (en) | Wet etching method | |
| JP3348804B2 (en) | Post-etch treatment method | |
| JPH0529285A (en) | Cleaning method and semiconductor manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981112 |