JPH0541419A - Estimation method of test equipment - Google Patents

Estimation method of test equipment

Info

Publication number
JPH0541419A
JPH0541419A JP3195178A JP19517891A JPH0541419A JP H0541419 A JPH0541419 A JP H0541419A JP 3195178 A JP3195178 A JP 3195178A JP 19517891 A JP19517891 A JP 19517891A JP H0541419 A JPH0541419 A JP H0541419A
Authority
JP
Japan
Prior art keywords
tester
probes
probe
wiring
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3195178A
Other languages
Japanese (ja)
Inventor
Kiyotaka Nozaki
清隆 野崎
Hisao Daimon
久夫 大門
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP3195178A priority Critical patent/JPH0541419A/en
Publication of JPH0541419A publication Critical patent/JPH0541419A/en
Pending legal-status Critical Current

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Landscapes

  • Measuring Leads Or Probes (AREA)
  • Locating Faults (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain the estimation method of a test equipment which method can define whether disconnection or imperfect wiring exists in a measuring route. CONSTITUTION:Tips of the whole probes 3 are connected with a conductive region 11 where the whole probes 3 can be shorted on the same surface, and shorted. Thereby a return route of current which returns from a tester 1 to the tester 1 through one probe out of a plurality of the probes 3 is formed. By operating the tester 1, one of the probes 3 is grounded via a wiring 2 connecting the tester 1 with the probe 3, and currents are applied to all of the other probes 3 from a current source in the tester 1. By measuring voltages generated in all current sources in the tester 1 which apply the currents, the route where disconnection or imperfect wiring exists can be defined.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体回路装置を検査
するための検査装置の評価方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of evaluating an inspection device for inspecting a semiconductor circuit device.

【0002】[0002]

【従来の技術】近年、半導体集積回路装置は、多ピン化
が著しく、プローブ検査においてプローブの高密度化が
みられ、テスターからプローブ先端までのいずれかの部
位で断線あるいは配線不良が存在する場合が多くみられ
るようになってきた。
2. Description of the Related Art In recent years, semiconductor integrated circuit devices have remarkably increased the number of pins, and probe densification has been increased in probe inspection, and there is disconnection or wiring failure at any part from the tester to the probe tip. Is becoming more common.

【0003】以下に従来の半導体集積回路装置のプロー
ブ検査方法について説明する。図2は従来のプローブ検
査方法の説明図であり、1はテスター、2はテスター1
とプローブ3を接続する配線、4はワイヤーと接続する
ための半導体集積回路装置上の金属からなるパッド、5
は通常の拡散を終えて複数個の半導体集積回路装置を形
成したスライスである。
A conventional probe inspection method for a semiconductor integrated circuit device will be described below. FIG. 2 is an explanatory view of a conventional probe inspection method, where 1 is a tester and 2 is a tester 1.
Wiring 4 for connecting the probe 3 to the probe 3 is a pad 5 made of metal on the semiconductor integrated circuit device for connecting the wire 5
Is a slice in which a plurality of semiconductor integrated circuit devices have been formed after normal diffusion.

【0004】以上のように構成された半導体集積回路装
置のプローブ検査方法について、以下その動作を説明す
る。
The operation of the probe inspection method for the semiconductor integrated circuit device configured as described above will be described below.

【0005】ワイヤーと接続するための半導体集積回路
装置上のパッド4は、半導体集積回路装置の入力端子あ
るいは出力端子あるいは制御端子等であり、個々のパッ
ド4に各々1個のプローブ3を接触させることにより、
半導体集積回路装置の特性を測定するに必要な入力条件
や、制御条件がテスター1によりテスター1とプローブ
3を接続する配線2と、プローブ3を経て上記条件を付
与されるべきパッド4に与えられる。また、上記の与え
られた入力条件や制御条件の下での半導体集積回路装置
の出力が生じるべきパッド4の状態がプローブ3、配線
2を経てテスター1により測定される。
The pads 4 on the semiconductor integrated circuit device for connecting to the wires are input terminals, output terminals, control terminals, etc. of the semiconductor integrated circuit device, and one probe 3 is brought into contact with each pad 4. By
Input conditions and control conditions necessary for measuring the characteristics of the semiconductor integrated circuit device are given to the wiring 2 connecting the tester 1 and the probe 3 by the tester 1, and the pad 4 to which the above condition is given via the probe 3. . The state of the pad 4 under which the output of the semiconductor integrated circuit device should be generated under the given input condition and control condition is measured by the tester 1 via the probe 3 and the wiring 2.

【0006】[0006]

【発明が解決しようとする課題】しかしながら上記の従
来の構成では、半導体集積回路装置の特性不良を示す結
果が生じた場合、現実に半導体集積回路装置の特性不良
であるのか、測定系の不良、例えば断線あるいは配線不
良が原因であるのか確定することが困難であり、プロー
ブ検査の検査効率を低下させていた。
However, in the above-described conventional configuration, when the result indicating the characteristic failure of the semiconductor integrated circuit device occurs, whether the characteristic failure of the semiconductor integrated circuit device is actually caused, the measurement system failure, For example, it is difficult to determine whether the cause is a disconnection or a wiring failure, and the inspection efficiency of the probe inspection is reduced.

【0007】本発明は上記従来の課題を解決するもの
で、テスターからプローブまでの経路に断線あるいは配
線不良が存在するか否かを確定することのできる検査装
置の評価方法を提供することを目的とする。
The present invention solves the above-mentioned conventional problems, and an object thereof is to provide an evaluation method of an inspection device capable of determining whether or not there is a disconnection or a wiring defect in the path from the tester to the probe. And

【0008】[0008]

【課題を解決するための手段】この目的を達成するため
に本発明の検査装置の評価方法は、半導体回路装置を検
査するテスターと、そのテスターと接続された複数のプ
ローブと、それらの全プローブが同一面で短絡し得る良
導体領域が付着された基板とを有し、各プローブと上記
良導体領域を接触することにより、テスターから複数の
プローブのうちのある1個のプローブを介してテスター
に戻る電流の往復経路を形成するという構成をもつ。
In order to achieve this object, an inspection method for an inspection apparatus according to the present invention comprises a tester for inspecting a semiconductor circuit device, a plurality of probes connected to the tester, and all of the probes. Has a substrate to which a good conductor region capable of being short-circuited on the same surface is attached, and each probe is brought into contact with the good conductor region to return from the tester to the tester via one probe out of a plurality of probes. It has a configuration of forming a round-trip path of current.

【0009】[0009]

【作用】この構成によって、もしテスター内の電流源に
より電流印加しようとしたあるプローブに対し、電流が
流れないとき、プローブ先端間はスライス上に付着され
た良導体領域によって短絡されているので、テスターよ
りプローブ先端に至る経路で断線あるいは配線不良が存
在することになる。テスターより先端に至る経路で断線
あるいは配線不良が存在すれば、上記電流源により電流
印加しようとした電流はこの経路に流れることができず
上記電流源は制御値まで電圧が発生する。また、テスタ
ーより先端に至る経路で断線あるいは配線不良が存在し
ないときは上記電流源には電圧は発生しない。従って、
プローブに電流を印加した電流源の電圧を測定すること
によりテストヘッドからプローブ先端までの導通状態を
確認することができ、従来例に比べ、通常の拡散を終え
て複数個の集積回路装置を形成したスライスのプローブ
検査の検査効率を向上させることができる。
With this configuration, if no current flows to a certain probe to which a current source is applied by the current source in the tester, the tip of the probe is short-circuited by the good conductor region attached on the slice, so the tester There will be disconnection or wiring failure in the path leading to the probe tip. If there is disconnection or wiring failure in the path from the tester to the tip, the current that the current source tried to apply cannot flow in this path, and the current source generates a voltage up to the control value. Further, when there is no disconnection or wiring failure in the path from the tester to the tip, no voltage is generated in the current source. Therefore,
The conduction state from the test head to the tip of the probe can be confirmed by measuring the voltage of the current source with the current applied to the probe. It is possible to improve the inspection efficiency of the probe inspection of the slice.

【0010】[0010]

【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【0011】図1は本発明の一実施例における検査装置
の評価方法を示すものである。図1において図2の従来
例と同一部分には同一番号を付し、説明を省略する。す
なわち本発明の特徴は全プローブ3が同一面で短絡し得
る良導体領域11、良導体領域11が付着された基板1
2にある。
FIG. 1 shows an evaluation method for an inspection apparatus according to an embodiment of the present invention. In FIG. 1, the same parts as those in the conventional example of FIG. That is, the feature of the present invention is that the good conductor region 11 in which all the probes 3 can be short-circuited on the same plane and the substrate 1 to which the good conductor region 11 is attached
In 2.

【0012】図1において、全プローブ3が同一面で短
絡し得る良導体領域11に全プローブ3の先端を接触さ
せることにより、全プローブ3の先端を短絡させ、次に
テスター1を操作することにより、プローブ3のうちの
1本を接地電位とし、他の全プローブ3にテスター1内
の電流源を用いて電流を印加させる。次に電流を印加し
たテスター1内の全電流源に発生した電圧を測定する。
もし、テスター1内の電流源により電流印加しようとし
た特定のプローブ3に対し、電流が流れないとき、プロ
ーブ3先端間は全プローブが同一面で短絡し得る良導体
領域11によって短絡されているので、テスター1より
プローブ3の先端に至る経路で断線あるいは配線不良が
存在することになり、断線あるいは配線不良が存在する
特定の経路を確定することができる。
In FIG. 1, the tips of all the probes 3 are short-circuited by bringing the tips of all the probes 3 into contact with a good conductor region 11 in which all the probes 3 can be short-circuited on the same plane, and then the tester 1 is operated. , One of the probes 3 is set to the ground potential, and the current is applied to all the other probes 3 by using the current source in the tester 1. Next, the voltage generated in all the current sources in the tester 1 to which the current is applied is measured.
If no current flows to the specific probe 3 to which the current source in the tester 1 tries to apply the current, the tips of the probes 3 are short-circuited by the good conductor region 11 which can short-circuit all the probes on the same plane. Since a disconnection or a wiring defect exists in the path from the tester 1 to the tip of the probe 3, it is possible to determine the specific path in which the disconnection or the wiring defect exists.

【0013】以上のように本実施例によれば、通常のプ
ローブ検査を行う状況において、全プローブの先端を短
絡し得る良導体領域11が付着された基板12を準備す
ることのみにより、テスター1から全プローブ3の先端
までの導通状態を確認することができ、従来例に比べ、
通常の拡散を終えて複数個の集積回路装置を形成したス
ライスのプローブ検査の検査効率を向上させることがで
きる。
As described above, according to the present embodiment, the tester 1 can be prepared only by preparing the substrate 12 to which the good conductor region 11 capable of short-circuiting the tips of all the probes is attached under the condition that the normal probe inspection is performed. It is possible to confirm the conduction state up to the tips of all the probes 3, and compared to the conventional example,
It is possible to improve the inspection efficiency of the probe inspection of the slice in which a plurality of integrated circuit devices are formed after the normal diffusion is completed.

【0014】[0014]

【発明の効果】以上のように本発明は、半導体回路装置
を検査するテスターと、そのテスターと接続された複数
のプローブと、全プローブが同一面で短絡し得る良導体
領域が付着された基板とを有し、各プローブと上記良導
体領域を接触することにより、テスターから複数プロー
ブのうちのある1個のプローブを介してテスターに戻る
電流の往復経路を形成し、導通状態を確認することで測
定経路の良,不良の判定をし得る構成によるので、測定
経路の不良と半導体集積回路装置の特徴不良との判別を
明確にし得る検査装置の評価方法を提供できる。
As described above, the present invention provides a tester for inspecting a semiconductor circuit device, a plurality of probes connected to the tester, and a substrate to which a good conductor region where all the probes can be short-circuited on the same surface is attached. By making contact with each probe and the above-mentioned good conductor region, a reciprocating path of the current returning from the tester to the tester via one probe out of a plurality of probes is formed, and the conduction state is confirmed to measure. Since the configuration is such that it is possible to judge whether the path is good or bad, it is possible to provide an evaluation method for an inspection apparatus that can clearly distinguish between a defective measurement path and a characteristic failure of the semiconductor integrated circuit device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例における検査装置の評価方法
を示す構成図
FIG. 1 is a configuration diagram showing an evaluation method of an inspection device according to an embodiment of the present invention.

【図2】従来の検査装置によるプローブ検査方法を示す
構成図
FIG. 2 is a configuration diagram showing a probe inspection method by a conventional inspection device.

【符号の説明】[Explanation of symbols]

1 テスター 2 テスターとプローブを接続する配線 3 プローブ 11 全プローブが同一で短絡し得る良導体領域 12 良導体領域が付着された基板 1 Tester 2 Wiring connecting the tester and the probe 3 Probe 11 All conductors are the same and a good conductor area that can be shorted 12 A substrate with a good conductor area attached

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体回路装置を検査するテスターと、
そのテスターと接続された複数のプローブと、全プロー
ブが同一面に短絡し得る良導体領域が付着された基板と
を有し、前記各プローブと全良導体領域を接触すること
により、前記テスターから前記複数のプローブのうちの
ある1個のプローブを介してテスターに戻る電流の往復
経路を形成し、導通状態を確認することで測定経路の
良,不良を判定することを特徴とする検査装置の評価方
法。
1. A tester for inspecting a semiconductor circuit device,
A plurality of probes connected to the tester, and a substrate having a good conductor region where all probes can be short-circuited on the same surface are attached, and by contacting each probe and the whole good conductor region, the plurality of probes from the tester An evaluation method of an inspection apparatus, characterized in that a good return path of a measurement path is determined by forming a reciprocating path of a current returning to a tester through one of the probes of the .
JP3195178A 1991-08-05 1991-08-05 Estimation method of test equipment Pending JPH0541419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3195178A JPH0541419A (en) 1991-08-05 1991-08-05 Estimation method of test equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3195178A JPH0541419A (en) 1991-08-05 1991-08-05 Estimation method of test equipment

Publications (1)

Publication Number Publication Date
JPH0541419A true JPH0541419A (en) 1993-02-19

Family

ID=16336750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3195178A Pending JPH0541419A (en) 1991-08-05 1991-08-05 Estimation method of test equipment

Country Status (1)

Country Link
JP (1) JPH0541419A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524837A (en) * 2003-07-01 2007-08-30 フォームファクター, インコーポレイテッド Apparatus and method for electromechanical testing and verification of probe cards
CN107064719A (en) * 2017-06-02 2017-08-18 北京华峰测控技术有限公司 A kind of Kelvin's connecting fault detection circuit and method
CN115508748A (en) * 2022-09-15 2022-12-23 京东方科技集团股份有限公司 Bonding pad detection device for display panel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524837A (en) * 2003-07-01 2007-08-30 フォームファクター, インコーポレイテッド Apparatus and method for electromechanical testing and verification of probe cards
CN107064719A (en) * 2017-06-02 2017-08-18 北京华峰测控技术有限公司 A kind of Kelvin's connecting fault detection circuit and method
CN107064719B (en) * 2017-06-02 2023-09-19 北京华峰测控技术有限公司 Kelvin connection fault detection circuit and method
CN115508748A (en) * 2022-09-15 2022-12-23 京东方科技集团股份有限公司 Bonding pad detection device for display panel

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