JPH054666B2 - - Google Patents
Info
- Publication number
- JPH054666B2 JPH054666B2 JP61126592A JP12659286A JPH054666B2 JP H054666 B2 JPH054666 B2 JP H054666B2 JP 61126592 A JP61126592 A JP 61126592A JP 12659286 A JP12659286 A JP 12659286A JP H054666 B2 JPH054666 B2 JP H054666B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resist
- pattern
- organic polymer
- polymer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 16
- 229920000620 organic polymer Polymers 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- GJCAUTWJWBFMFU-UHFFFAOYSA-N chloro-dimethyl-trimethylsilylsilane Chemical compound C[Si](C)(C)[Si](C)(C)Cl GJCAUTWJWBFMFU-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- KTZVZZJJVJQZHV-UHFFFAOYSA-N 1-chloro-4-ethenylbenzene Chemical compound ClC1=CC=C(C=C)C=C1 KTZVZZJJVJQZHV-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- WETWJCDKMRHUPV-UHFFFAOYSA-N acetyl chloride Chemical compound CC(Cl)=O WETWJCDKMRHUPV-UHFFFAOYSA-N 0.000 description 1
- 239000012346 acetyl chloride Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- -1 methyl ethyl Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- FIONWRDVKJFHRC-UHFFFAOYSA-N trimethyl(2-phenylethenyl)silane Chemical compound C[Si](C)(C)C=CC1=CC=CC=C1 FIONWRDVKJFHRC-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はレジスト材料およびパターン形成方法
に関し、特に半導体集積回路、磁気バブルメモリ
等の製造に適するレジスト材料およびパターン形
成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resist material and a pattern forming method, and more particularly to a resist material and a pattern forming method suitable for manufacturing semiconductor integrated circuits, magnetic bubble memories, and the like.
（従来の技術）
最近、半導体集積回路、磁気バブルメモリ等の
製造に適する微細パターン形成方法として、二層
レジスト法が提案されている。この方法は、基板
上に有機高分子層を形成した後、その上にシリコ
ン含有レジスト層を設け、次いで露光、現像、転
写を行つて微細パターンを形成するものである。
現在、この二層レジスト法に適したシリコン含有
レジストの開発が盛んに行なわれている。(Prior Art) Recently, a two-layer resist method has been proposed as a fine pattern forming method suitable for manufacturing semiconductor integrated circuits, magnetic bubble memories, and the like. In this method, after forming an organic polymer layer on a substrate, a silicon-containing resist layer is provided thereon, and then exposure, development, and transfer are performed to form a fine pattern.
Currently, silicon-containing resists suitable for this two-layer resist method are being actively developed.
Ｘ線、電子線あるいは深紫外線に感応するシリ
コン含有レジストとして、トリメチルシリルスチ
レンあるいはその共重合体が提案されている。
（特願昭57−12386号）
（発明が解決しようとする問題点）
しかしながら、これらの材料のドライエツチン
グ耐性は必ずしも満足できるものではない。一般
に、ドライエツチング耐性が不十分の場合、(1)パ
ターン転写時のエツチング条件が制限される、(2)
エツチング時間が長くなる、(3)マスクパターンが
正確に転写されない、いわゆるパターン変換差を
生じる、等の問題を生じる。 Trimethylsilylstyrene or a copolymer thereof has been proposed as a silicon-containing resist sensitive to X-rays, electron beams, or deep ultraviolet rays.
(Japanese Patent Application No. 57-12386) (Problems to be Solved by the Invention) However, the dry etching resistance of these materials is not necessarily satisfactory. In general, when dry etching resistance is insufficient, (1) etching conditions during pattern transfer are restricted; (2)
Problems arise such as the etching time becomes long and (3) the mask pattern is not transferred accurately, resulting in so-called pattern conversion differences.
本発明の目的は、二層レジスト法に適したドラ
イエツチング耐性の強いレジスト材料およびその
使用方法を提供することにある。 An object of the present invention is to provide a resist material with strong dry etching resistance suitable for a two-layer resist method and a method for using the same.
（問題点を解決するための手段）
本発明は、下記一般式で示されるスチレン系重
合体からなるレジスト材料および基板上に有機高
分子層を形成する工程、該有機高分子層上にレジ
スト層を形成する工程、リソグラフイ技術を用い
て該レジスト層に所望のパターンを形成する工
程、該パターンをマスクに前記有機高分子層をド
ライエツチングする工程からなるパターン形成方
法において、前記レジスト層材料として下記一般
式で示されるスチレン系重合体からなるレジスト
材料を用いることからなる。(Means for Solving the Problems) The present invention provides a process for forming an organic polymer layer on a resist material and a substrate made of a styrene polymer represented by the following general formula, and a resist layer on the organic polymer layer. a step of forming a desired pattern on the resist layer using a lithography technique; and a step of dry etching the organic polymer layer using the pattern as a mask, in which as the resist layer material It consists of using a resist material made of a styrene polymer represented by the following general formula.
一般式
（式中、ｎは正の整数を表わし、R1，R2，R3，
R4，R5は低級アルキル基もしくは水素原子を表
わす。）
（作用）
酸素を用いたドライエツチングにおいては、そ
のエツチング耐性と被エツチング材料のシリコン
含有量は強く相関しており、シリコン含有量が高
いほどエツチング耐性が強くなる。本発明による
スチレン系重合体はその構成単位当りシリコン原
子を２個含むために、シリコン含有量が多くな
る。その結果、前記したエツチング上の問題をか
なり低減できる。 general formula (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group or a hydrogen atom. ) (Function) In dry etching using oxygen, there is a strong correlation between the etching resistance and the silicon content of the etched material, and the higher the silicon content, the stronger the etching resistance. Since the styrenic polymer according to the present invention contains two silicon atoms per constituent unit, it has a high silicon content. As a result, the etching problems mentioned above can be significantly reduced.
本発明によるスチレン系重合体は次のような方
法で合成される。 The styrenic polymer according to the present invention is synthesized by the following method.
（式中、ｎは正の整数を表わし、R1，R2，R3，
R4，R5，R6は低級アルキル基もしくは水素原子
を表わす。）
このようにして合成したスチレン系重合体にＸ
線、電子線あるいは深紫外線等のエネルギ線を照
射後、適当な有機溶剤で現像することにより、照
射部分のみを残すことができるので、本発明によ
るスチレン系重合体は、いわゆるネガ型レジスト
として使用できる。 (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 , R 5 and R 6 represent a lower alkyl group or a hydrogen atom. ) The styrenic polymer synthesized in this way has
After irradiation with energy beams such as beams, electron beams, or deep ultraviolet rays, only the irradiated areas can be left by developing with an appropriate organic solvent, so the styrenic polymer according to the present invention can be used as a so-called negative resist. can.
更に、本発明のレジスト材料を二層レジスト法
に適用するには、まず加工を施すべき基板上にス
ピンコート法等により厚い有機高分子層を設けた
後、本発明のレジスト材料からなる層を前記有機
高分子層の上に形成する。その後、Ｘ線、電子
線、深紫外線、あるいはイオンビーム等を用い
て、所望の微細パターンを描画した後、適当な現
像液を用いて所望の微細なネガパターンが得られ
る。得られた微細パターンをマスクとして、酸素
を用いた反応性イオンエツチングにより、有機高
分子層にパターン転写を行うことができる。しか
る後、微細パターンが形成された厚い有機高分子
層をマスクに被加工材をエツチングすることがで
きる。又、この厚い有機高分子層をイオン打ち込
みのマスクに用いることもできる。あるいは、リ
フトオフプロセスへの適用も可能である。 Furthermore, in order to apply the resist material of the present invention to the two-layer resist method, first a thick organic polymer layer is provided on the substrate to be processed by spin coating or the like, and then a layer made of the resist material of the present invention is applied. Formed on the organic polymer layer. Thereafter, a desired fine pattern is drawn using X-rays, electron beams, deep ultraviolet rays, or ion beams, and then a desired fine negative pattern is obtained using an appropriate developer. Using the obtained fine pattern as a mask, the pattern can be transferred to the organic polymer layer by reactive ion etching using oxygen. Thereafter, the workpiece can be etched using the thick organic polymer layer with the fine pattern formed thereon as a mask. Moreover, this thick organic polymer layer can also be used as a mask for ion implantation. Alternatively, application to a lift-off process is also possible.
（実施例） 以下、実施例に基き詳細に説明する。(Example) Hereinafter, it will be explained in detail based on examples.
実施例 １
(1) 単量体の合成
300ml三つ口フラスコ中に、粉砕したAlCl326.7
ｇ（0.2モル）とヘキサメチルジシラン29.3ｇ
（0.2モル）を仕込み、室温で攪拌しながらアセチ
ルクロライド15.7ｇ（0.2モル）を２〜３時間か
けて滴下した。途中、溶液は均一になつた。滴下
終了後、更に１時間室温で反応を続けた。その
後、減圧蒸留により、目的とするクロロペンタメ
チルジシランを得た。収量27ｇ（81％）沸点71
℃／100mmHg
次に、乾燥窒素ガスで三つ口フラスコ内を置換
後、グリニヤール用マグネシウム1.5ｇ（0.06グ
ラム原子）および脱水したTHF10mlを仕込んだ。
少量のエチルブロマイドを加えた後、Ｐ−クロル
スチレン８ｇ（0.06モル）と脱水したTHF50ml
からなる溶液を攪拌しながら滴下し、反応させ
た。次いで、50〜60℃に保ちながら、先ほど合成
したクロロペンタメチルジシラン1.7ｇ（0.05モ
ル）と脱水したTHF15mlからなる溶液を滴下し、
反応させた。滴下後、加温を止めて、約１時間攪
拌した。次いで、水を100ml加えた後、エーテル
抽出を行い、エーテル層を硫酸マグネシウムで乾
燥させた。エーテル除去後、減圧蒸留で目的とす
る単量体を得た。収量5.3ｇ（45％）沸点75〜77
℃／0.45mmHg
(2) 重合体の合成
(1)で合成した単量体5.0ｇ、AIBN30mg、ベン
ゼン５mlを仕込み、脱気後、70℃で19時間かけて
重合反応を行つた。反応後、メタノール中に反応
溶液を投入することにより、白色固体を得た。メ
チルエチルエトン−メタノール系で常法により分
別精鉄を行つた。収量1.5ｇ（30％）。GPCより求
めた重量平均分子量は約52000、多分散度は約1.3
であつた。又、IR、1H−NMRより得られた重合
体が下記式で示されることを確認した。Example 1 (1) Synthesis of monomer In a 300ml three-necked flask, pulverized AlCl 3 26.7
g (0.2 mol) and 29.3 g of hexamethyldisilane
(0.2 mol) was charged, and 15.7 g (0.2 mol) of acetyl chloride was added dropwise over 2 to 3 hours while stirring at room temperature. During the process, the solution became homogeneous. After the dropwise addition was completed, the reaction was continued for another 1 hour at room temperature. Thereafter, the desired chloropentamethyldisilane was obtained by distillation under reduced pressure. Yield 27g (81%) Boiling point 71
C/100 mmHg Next, after purging the inside of the three-necked flask with dry nitrogen gas, 1.5 g (0.06 gram atom) of Grignard magnesium and 10 ml of dehydrated THF were charged.
After adding a small amount of ethyl bromide, 8 g (0.06 mol) of P-chlorostyrene and 50 ml of dehydrated THF
A solution consisting of was added dropwise with stirring to cause a reaction. Next, while maintaining the temperature at 50 to 60°C, a solution consisting of 1.7 g (0.05 mol) of chloropentamethyldisilane synthesized earlier and 15 ml of dehydrated THF was added dropwise.
Made it react. After the dropwise addition, heating was stopped and the mixture was stirred for about 1 hour. Next, after adding 100 ml of water, ether extraction was performed, and the ether layer was dried with magnesium sulfate. After removing the ether, the desired monomer was obtained by distillation under reduced pressure. Yield 5.3g (45%) Boiling point 75-77
°C/0.45 mmHg (2) Synthesis of polymer 5.0 g of the monomer synthesized in (1), 30 mg of AIBN, and 5 ml of benzene were charged, and after degassing, a polymerization reaction was carried out at 70 °C for 19 hours. After the reaction, a white solid was obtained by pouring the reaction solution into methanol. Fractional refining of iron was carried out in a conventional manner using a methyl ethyl ethone-methanol system. Yield 1.5g (30%). The weight average molecular weight determined by GPC is approximately 52,000, and the polydispersity is approximately 1.3.
It was hot. Furthermore, it was confirmed by IR and 1 H-NMR that the obtained polymer was represented by the following formula.
（式中、ｎは正の整数を表わす。）
（実施例 ２）
実施例１で合成した重合体１ｇをキシレン10ml
に溶解させて、レジスト溶液とした。Si基板上に
スピンコート法により、0.3μｍ厚の本発明による
重合体層を形成した。電子線露光装置を用いて、
約20μC／cm2照射後、THF：EtOH＝１：１の現
像液に１分、イソプロパノールに１分順次浸漬し
た。その結果、Si基板上にほとんど膜べりのない
ネガパターンが得られた。 (In the formula, n represents a positive integer.) (Example 2) 1 g of the polymer synthesized in Example 1 was mixed with 10 ml of xylene.
A resist solution was prepared by dissolving the resist solution. A 0.3 μm thick polymer layer according to the present invention was formed on a Si substrate by spin coating. Using an electron beam exposure device,
After irradiation of approximately 20 μC/cm 2 , the sample was sequentially immersed in a developing solution of THF:EtOH=1:1 for 1 minute and in isopropanol for 1 minute. As a result, a negative pattern with almost no film loss was obtained on the Si substrate.
実施例 ３
Si基板上に、スピンコート法によりMP−1300
（シプレー社製）を塗布し、250℃で１時間加熱処
理した。この時、MP−1300層の厚みは約1.5μｍ
であつた。次いで、このMP−1300層の上に実施
例２で調製したレジスト溶液を用いて、約0.3μｍ
厚の本発明による重合体層を形成した。実施例２
と同様に、電子線露光装置を用いて、サブミクロ
ンのネガパターンを得た。更に反応性イオンエツ
チング装置（アネルバ社製DEM−451）を用い
て、酸素流量5sccm，2.0Pa，0.16W／cm2の条件
で12分間エツチングを行つた。SEM観察の結果、
上層のサブミクロンパターンが精度良く、下層に
転写されていることが分つた。Example 3 MP-1300 was coated on a Si substrate by spin coating.
(manufactured by Shipley) was applied and heat treated at 250°C for 1 hour. At this time, the thickness of the MP-1300 layer is approximately 1.5μm
It was hot. Next, the resist solution prepared in Example 2 was used on this MP-1300 layer to form a layer of about 0.3 μm.
A thick layer of polymer according to the invention was formed. Example 2
Similarly, a submicron negative pattern was obtained using an electron beam exposure device. Furthermore, etching was performed for 12 minutes using a reactive ion etching device (DEM-451 manufactured by Anelva Corporation) under conditions of an oxygen flow rate of 5 sccm, 2.0 Pa, and 0.16 W/cm 2 . As a result of SEM observation,
It was found that the submicron pattern on the upper layer was transferred to the lower layer with good accuracy.
（発明の効果）
本発明によつて、シリコン原子を含むスチレン
系重合体からなるネガ型レジスト組成物が得られ
た。更にこのレジスト組成物を露光、現像するこ
とによつて得られるパターンは、ドライエツチン
グによる厚い有機高分子層のエツチングのマスク
として十分な耐性を示し、有機高分子層へのパタ
ーン転写が精度良く行なわれた。(Effects of the Invention) According to the present invention, a negative resist composition made of a styrene polymer containing silicon atoms was obtained. Furthermore, the pattern obtained by exposing and developing this resist composition has sufficient resistance as a mask for etching a thick organic polymer layer by dry etching, and the pattern can be transferred to the organic polymer layer with high precision. It was.
Claims (1)
R4，R5は低級アルキル基もしくは水素原子を表
わす。）で示されるスチレン系重合体からなるこ
とを特徴とするレジスト材料。 ２ 基板上に有機高分子層を形成する工程、該有
機高分子層上にレジスト層を形成する工程、リソ
グラフイ技術を用いて該レジスト層に所望のパタ
ーンを形成する工程、該パターンをマスクに前記
有機高分子層をドライエツチングする工程からな
るパターン形成方法において、前記レジスト層材
料として一般式 （式中、ｎは正の整数を表わし、R1，R2，R3，
R4，R5は低級アルキル基もしくは水素原子を表
わす。）で示されるスチレン系重合体からなるレ
ジスト材料を用いることを特徴とするパターン形
成方法。[Claims] 1. General formula (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group or a hydrogen atom. ) A resist material comprising a styrenic polymer represented by: 2. A step of forming an organic polymer layer on a substrate, a step of forming a resist layer on the organic polymer layer, a step of forming a desired pattern on the resist layer using lithography technology, and a step of using the pattern as a mask. In the pattern forming method comprising the step of dry etching the organic polymer layer, the resist layer material has the general formula (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group or a hydrogen atom. ) A pattern forming method characterized by using a resist material made of a styrene polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61126592A JPS62280840A (en) | 1986-05-30 | 1986-05-30 | Resist material and pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61126592A JPS62280840A (en) | 1986-05-30 | 1986-05-30 | Resist material and pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62280840A JPS62280840A (en) | 1987-12-05 |
| JPH054666B2 true JPH054666B2 (en) | 1993-01-20 |
Family
ID=14938998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61126592A Granted JPS62280840A (en) | 1986-05-30 | 1986-05-30 | Resist material and pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62280840A (en) |
-
1986
- 1986-05-30 JP JP61126592A patent/JPS62280840A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62280840A (en) | 1987-12-05 |
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