JPH0547687A - Method and device for heat treatment - Google Patents

Abstract

PURPOSE:To provide a heat treatment method and heat treatment device which can heat-treat the whole surface of a planar object to be treated, quickly at uniform temperature. CONSTITUTION:A planar heating source 2 is arranged to face the treatment face of a planar object to be treated 1, and time object 1 to be treated and the planar heating source 2 are relatively brought close to each other quickly in order to heat-treat the object 1 to be treated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a semiconductor wafer,
The present invention relates to a heat treatment method and a heat treatment apparatus for heat-treating a planar object such as an LCD (liquid crystal display).

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, for example, semiconductor wafers are subjected to oxidation / diffusion processing, CVD processing and the like. In particular, recently, 0.4 μm to 0.2
The design rules of semiconductor devices have become finer to μm, and the diameter of semiconductor wafers has also increased from 8 inches to 12 inches. Development is an urgent issue.

Specifically, in the process processing of a semiconductor wafer, it is an essential condition to reduce the thermal budget (thermal history). For example, a doping process of 50 to 100 Å, a gate oxide film or a capacitor insulating film In forming a thin film, rapid thermal processing, that is, thermal processing in a short time is essential. Further, for example, in order to reduce the resistance by making the PN junction as shallow as 0.1 μm or less and enable the formation of the junction on the surface of an arbitrary shape, it is necessary to prevent the film deterioration and the occurrence of crystal defects at the time of the junction. However, rapid thermal processing is required because the active region of the PN junction is narrow.

In addition, for example, in the formation of a LOCOS oxide film, the compressive stress of the adjacent LOCOS oxide film expands due to a synergistic effect due to the thermal cycle, and the reliability of surface potential fluctuation, leak current, breakdown voltage, etc. is likely to decrease. However, in order to prevent this, it is necessary to reduce the thermal cycle by rapid thermal processing. Further, for example, when a capacitor insulating film is formed using a high dielectric material, metal film formation and doping that enable film formation of metal oxide (Ta ₂ O _5, etc.), polyimide (passivation film), etc. It has become necessary to develop a system that can handle complex processes.

In the present situation where the diameter of the semiconductor wafer is increasing from 8 inches to 12 inches, the temperature difference between the central portion and the peripheral portion of the semiconductor wafer can be made small and uniform rapid thermal processing can be performed. It is necessary to reduce slips, distortions, and warps that are likely to occur on a wafer so as to avoid inconvenience in manufacturing semiconductor devices.

[0006]

However, in the conventional vertical batch processing type heat treatment apparatus, a cylindrical heat source is arranged so as to surround semiconductor wafers stacked and accommodated in a quartz wafer boat, Since the semiconductor wafer is heated from the peripheral portion toward the central portion, when a semiconductor wafer is rapidly heated, a large temperature gradient is generated between the central portion and the peripheral portion of the semiconductor wafer, and a uniform temperature is generated. There is a problem that heat treatment cannot be performed. Therefore, it is an object of the present invention to provide a heat treatment method and a heat treatment apparatus capable of rapidly heat treating the entire surface of a planar object at a uniform temperature.

[0007]

In order to achieve the above object, the heat treatment method of the present invention is characterized in that a planar heat source is arranged so as to face a processing surface of a planar object to be processed. And the planar heat source are brought relatively close to each other to heat-treat the object. Further, the planar heat source is arranged so as to face the processing surface of the planar object, and the object and the planar heat source are brought relatively close to each other to heat-process the object. In doing so, a plurality of heat treatments having different temperatures are performed by changing the set value of the shortest distance between the object to be processed and the planar heat source. The heat treatment apparatus of the present invention includes a planar heat source arranged so as to face the processing surface of the planar object, and a moving mechanism that relatively brings the object and the planar heat source closer to each other. It is characterized by

[0008]

In the present invention, the planar heat source is arranged so as to face the processing surface of the planar object, so that the radiant heat from the planar heat source is vertically incident on the entire surface of the object. Therefore, the entire surface of the object to be processed can be heat-treated uniformly with high accuracy, and moreover, the object to be processed and the surface heat source are brought relatively close to each other to perform the heat treatment, so that the rapid heating can be performed. It will be possible. Further, by changing the set value of the minimum separation distance between the object to be processed and the planar heat source, it is possible to perform a plurality of heat treatments having different temperatures, so that a combined process treatment is possible.

[0009]

EXAMPLES Examples of the present invention will be described below. The following examples are examples in which a semiconductor wafer is used as a planar object to be processed, but the present invention is not limited to the semiconductor wafer, and other planar objects such as LCD can be used. An object to be processed can also be used.

[Embodiment 1] In this embodiment, a heat treatment method corresponding to claim 1 will be described. In this embodiment, as shown in FIG. 1, the processing surface 11 of the semiconductor wafer 1 is
The planar heat source 2 is disposed so as to face the semiconductor wafer 1, and the semiconductor wafer 1 and the planar heat source 2 are relatively quickly brought close to each other to heat-treat the semiconductor wafer 1. The planar heat source 2 may be arranged directly above the semiconductor wafer 1 as shown in FIG. 1, or may be arranged directly below the processing surface 11 of the semiconductor wafer 1 with the processing surface 11 facing downward. According to such a heat treatment method, the radiant heat from the planar heat source 2 is, as shown by the arrow in FIG.
The outer diameter of the semiconductor wafer 1 is, for example, 12 because the semiconductor wafer 1 faces substantially perpendicular to the processing surface (upper surface) 11 of the semiconductor wafer 1.
Even if the area is as large as an inch, the entire processing surface 11 can be heated at a uniform temperature. Moreover, since the semiconductor wafer 1 and the planar heat source 2 are brought relatively close to each other, rapid heating is possible. Becomes

As a result, the semiconductor wafer 1 slips,
It is possible to perform highly reliable heat treatment without causing distortion, warpage, etc. Further, it is possible to perform rapid heat treatment corresponding to the recent miniaturization of design rules of semiconductor devices and the increase in diameter of semiconductor wafers. Therefore, for example, doping treatment of 50 to 100 Å, formation of a very thin film of gate oxide film and capacitor insulating film, formation of shallow PN junction of 0.1 μm or less, LOCOS
It exhibits a remarkably excellent effect in various heat treatments such as formation of an oxide film and formation of a capacitor insulating film using a high dielectric material.

When the semiconductor wafer 1 and the planar heating source 2 are brought relatively close to each other, the planar heating source 2 may be fixed to raise the semiconductor wafer 1, or the semiconductor wafer 1 may be fixedly arranged. The planar heat source 2 may be moved down. The relative approach speed is determined by the processing surface 11 of the semiconductor wafer 1.
The temperature rise rate is, for example, 20 ° C./sec or more,
The speed is preferably 100 ° C./sec or more. As a specific approach speed, for example, 50 to 20
It is preferably 0 mm / sec or more.

The heat generating surface of the planar heat source 2 is the semiconductor wafer 1
It is preferable that the processing surface 11 has a circular shape similar to that of the processing surface 11, and the outer diameter of the heat generating surface of the planar heat source 1 is twice or more the outer diameter of the semiconductor wafer 1. The heat generating surface of the planar heat source 2 is preferably arranged parallel to the semiconductor wafer 1. Further, the heat generating surface of the planar heat generating source 2 may be a flat surface as a whole, or the peripheral portion thereof may be the semiconductor wafer 1.
It may be curved in a direction approaching.

[Embodiment 2] In this embodiment, a heat treatment method corresponding to claim 2 will be described. This embodiment will be described with reference to FIG. 1. By arranging the planar heat source 2 so as to face the processing surface 11 of the semiconductor wafer 1, the semiconductor wafer 1 and the planar heat source 2 are relatively rapidly moved. When the semiconductor wafer 1 is subjected to the heat treatment by approaching, the plurality of heat treatments having different temperatures are performed by changing the set value of the shortest separation distance L between the semiconductor wafer 1 and the planar heat source 2.

That is, the semiconductor wafer 1 and the planar heat source 2
The maximum value of the heating temperature of the semiconductor wafer 1 can be set to a desired value by changing the shortest separation distance L between the temperature and the temperature.
A low temperature treatment of about 00 ° C. can be appropriately selected and performed,
Complex process processing is possible. Here, the "shortest separation distance" means a distance from a predetermined position to the planar heat generating source 2 when the semiconductor wafer 1 is processed while the approach is stopped and is stationary.

[Embodiment 3] In this embodiment, a heat treatment apparatus corresponding to claim 3 will be described, which is particularly suitable for the oxidation / diffusion treatment. Figure 2
The outline of the said heat processing apparatus is shown, for example, 3-4 holding | maintenance protrusions 3 integrally formed in the peripheral part of the wafer holder 3.
1 contacts the back surface of the semiconductor wafer 1 opposite to the processing surface 11, and holds the semiconductor wafer 1 on the wafer holder 3. The wafer holder 3 is preferably made of a material such as high-purity silicon carbide (SiC) having excellent heat resistance and little pollution. In particular, high-purity silicon carbide (SiC) has better heat resistance than quartz (SiO ₂ ), and can withstand a high temperature of about 1200 ° C. sufficiently, so it is suitable as a material for oxidation / diffusion treatment. Is.

The planar heat source 2 is fixedly arranged on the upper inner wall of the heat insulating material 4 so as to face the processing surface 11 of the semiconductor wafer 1. The shortest separation distance L between the planar heat source 2 and the semiconductor wafer 1 is preferably short from the viewpoint of downsizing the device.
From the viewpoint of heating the entire surface of the large-area semiconductor wafer 1 at a uniform temperature, the longer the better. Specifically, the distance is set to satisfy both conditions to some extent, for example, about 300 to 600 mm.

The planar heat source 2 is, for example, molybdenum disilicide (MoSi ₂ ), resistance heating such as Kanthal (trade name) wire which is an alloy wire of iron (Fe), chromium (Cr) and aluminum (Al). It can be constructed by arranging the body in a plane. For example, molybdenum disilicide (MoS
i ₂ ) can be used as a single wire and Kanthal wire can be used as a coil. In particular, molybdenum disilicide (MoSi ₂ ) can sufficiently withstand a high temperature of about 1800 ° C., and is therefore suitable as a material for oxidation / diffusion treatment.

The heating surface of the planar heating source 2 preferably has the same shape as the processing surface 11 of the semiconductor wafer 1, that is, a circular shape, and the outer diameter thereof is twice the outer diameter of the semiconductor wafer 1. The above is preferable. According to the planar heat source 2 that satisfies such a condition, the temperature difference between the central portion and the peripheral portion of the semiconductor wafer 1 can be sufficiently reduced, and the entire processing surface 11 of the semiconductor wafer 1 can be further improved. The heat treatment can be performed at a uniform temperature. Further, the heat generating surface of the planar heat source 2 is preferably arranged in parallel with the semiconductor wafer 1. The heat generating surface of the planar heat generating source 2 may be a flat surface as a whole, or the peripheral portion may be curved in a direction approaching the semiconductor wafer 1.

The temperature of the sheet heating source 2 is preferably 100 to 300 ° C. higher than the maximum operating temperature of the semiconductor wafer 1. The planar heat source 2 is driven by a heating control unit (not shown), and the temperature control is performed by disposing a temperature sensor (not shown) such as a thermocouple at an appropriate position of the planar heat source 2. Can be performed based on the detection signal of.

Further, as shown in FIG. 3, a planar heat equalizing member 23 may be arranged between the planar heat source 2 and the semiconductor wafer 1. This heat equalizing member 23 is used for the planar heat source 2
When there is unevenness in heat generation, the unevenness in heat generation is eliminated and radiant heat directed to the semiconductor wafer 1 is sufficiently controlled in the vertical direction. Further, the heat equalizing member 23 is made of a material with less pollution such as high-purity silicon carbide (SiC), and the heat equalizing member 23 completely isolates the planar heat source 2 from the processing space. Even when the planar heat source 2 is made of a material containing a heavy metal that causes pollution, it is possible to effectively prevent the pollution by the heavy metal.

The heat equalizing member 23 is arranged so as to face the processing surface 11 of the semiconductor wafer 1, and its outer diameter is at least twice the outer diameter of the semiconductor wafer 1 as in the case of the planar heat source 2. Is preferred. Further, it is preferable that the soaking member 23 has a thicker central portion than the peripheral portion. With such a thickness, it is possible to reduce heat dissipation in the peripheral portion of the semiconductor wafer 1 and further improve the uniformity of temperature between the central portion and the peripheral portion. Further, the heat equalizing member 23 may have a shape in which its peripheral portion is curved in a direction approaching the semiconductor wafer 1. By having such a curved peripheral portion, it is possible to reduce heat dissipation in the peripheral portion of the semiconductor wafer 1 and reduce the temperature difference between the central portion and the peripheral portion. FIG. 4 shows an example of a specific form of the planar heat source 2, and for example, molybdenum disilicide (M
The resistance heating wire 21 made of a single oSi ₂ wire is arranged in a spiral shape.

Reference numeral 5 in FIG. 2 denotes a moving mechanism. This moving mechanism 5 moves the wafer holder 3 rapidly toward the planar heat source 2 and then moves backward rapidly.
It is composed of a motor 51, a drive shaft 52, and a drive arm 53. The motor 51 is connected to the drive shaft 52, and the drive shaft 52 is rotationally controlled by the motor 51.
The drive shaft 52 is provided with a screw, and is screwed to one end of the drive arm 53 via this screw. The other end of the drive arm 53 is connected to the wafer holder 3 via a motor 61 described later. When the motor 51 rotates the drive shaft 52, the drive arm 53 moves up or down by the action of the screw provided on the drive shaft 52, and the wafer holder 3 moves up or down as the drive arm 53 moves. Moving. Therefore, by controlling the rotation of the motor 51 by the control circuit, the rising speed or the falling speed of the wafer holder 3 can be appropriately adjusted. Wafer holder 3
The moving distance is about 300 to 600 mm, and the moving speed is preferably as rapid as 50 to 200 mm / sec or more.

FIG. 5 shows an example of the heat treatment mode in the oxidation / diffusion treatment, and the temperature of the sheet heating source 2 is set to, for example, 130.
With the nitrogen gas (N ₂ ) flowing at a constant temperature of 0 ° C., the wafer holder 3 is moved at a rising speed of, for example, 200 mm / sec so that the temperature of the semiconductor wafer 1 reaches about 500 ° C. from room temperature. Move up. When the temperature of the semiconductor wafer 1 reaches about 500 ° C., the semiconductor wafer 1 is further
So that the temperature reaches about 1200 ° C, for example 100
The wafer holder 3 is further moved upward at an ascending speed of mm / sec. When the temperature of the semiconductor wafer 1 reaches about 1200 ° C., the supply of nitrogen gas is stopped while the wafer holder 3 is fixed at that position, and then the oxygen gas (O ₂ )
While performing the oxidation / diffusion treatment. When the oxidation / diffusion process is completed, the temperature of the semiconductor wafer 1 is cooled to room temperature by repeating the above steps in the reverse order.

During the oxidation / diffusion process of the semiconductor wafer 1, the rotation mechanism 6 rotates the semiconductor wafer 1 about its center. In the rotating mechanism 6, 61 is a motor for rotating the semiconductor wafer 1 together with the wafer holder 3.

Reference numeral 4 in FIG. 2 is a heat insulating material.
Is made of alumina ceramics, for example, and has a wall thickness that decreases toward the lower side in order to have an appropriate temperature gradient along the moving direction of the semiconductor wafer 1. That is, the heat insulating effect is reduced toward the bottom. At the lower end of the heat insulating material 4, it is preferable to provide cooling means (not shown) for rapidly cooling the semiconductor wafer 1 after the heat treatment is completed. Refrigerants such as ammonia, sulfur disulfide, and water can be used as the cooling means. The latent heat of the refrigerant is used to cool to a temperature of, for example, 300 to 400 ° C.
The inner diameter of the heat insulating material 4 is preferably determined in consideration of the temperature of the semiconductor wafer 1, but when the semiconductor wafer 1 is 8 inches, for example, it is preferably about twice that of 400 to 500 mmφ.

Reference numeral 7 in FIG. 2 denotes a processing container, which can be formed of, for example, quartz (SiO ₂ ). This processing container 7 has a cylindrical shape having an opening at the lower end,
The wafer holder 3 and the semiconductor wafer 1 are separated from the planar heat source 2 and the heat insulating material 4 to separate the atmosphere of the semiconductor wafer 1 from the outside.

Reference numeral 8 in FIG. 2 denotes a gas introduction pipe, one end of which is projected from the lower portion of the processing container 7 to the outside, and the other end of which is extended upward inside the processing container 7 and is positioned diagonally above the semiconductor wafer 1. ing. The gas introduction pipe 8 is airtightly fixed to the processing container 7 by fastening an O-ring (not shown) with a screw, for example.

Reference numeral 9 in FIG. 2 denotes a gas discharge pipe, which is a processing container 7.
Is provided so as to penetrate the inside and outside of the processing container 7 at the lower part of the. The wafer holder 3 is lifted by the moving mechanism 5 so that the semiconductor wafer 1 is completely stored in the processing container 7 and the processing container 7 is completely sealed. A process gas is introduced into the processing container 7 from the gas introduction pipe 8 and the temperature in the processing container 7 is brought to a predetermined temperature necessary for the oxidation / diffusion processing by the radiant heat from the planar heat source 2. Since the temperature inside the processing container 7 is constant if the distance from the planar heat source 2 is constant, the semiconductor wafer 1
By setting in advance the maximum position (rest position) of, the predetermined temperature (for example, 12
00 ° C.). The semiconductor wafer 1 is oxidized / diffused by the reaction of the process gas under heating.

[Embodiment 4] In this embodiment, a heat treatment apparatus corresponding to claim 3 will be described, particularly a heat treatment apparatus suitable for performing a CVD process. FIG. 6 shows an outline of the heat treatment apparatus, and the wafer holder 3, the moving mechanism 5, and the rotating mechanism 6 have the same configurations as those of the third embodiment shown in FIG. The peripheral portion of the planar heat source 2 is the semiconductor wafer 1
It has a curved shape in the direction of approaching. Generally, the peripheral portion of the semiconductor wafer 1 has a greater heat dissipation effect than the central portion thereof, but the peripheral portion of the planar heat source 2 is not
By bending in a direction approaching the semiconductor wafer 1
It is possible to suppress heat radiation in the peripheral portion of the semiconductor wafer 1
The temperature of the entire surface can be made more uniform. The upper inner wall of the heat insulating material 4 has a shape capable of receiving the curved peripheral portion of the planar heat source 2.

The processing container 7 has a double tube structure including an outer tube 71 and an inner tube 72, and the outer tube 71 is made of quartz (Si).
It is made of a heat resistant material such as O ₂ ) and has a cylindrical shape having an upper end closed and an opening at the lower end. The inner pipe 72 has a cylindrical shape having openings at both upper and lower ends,
They are concentrically arranged in the outer tube 71 at intervals.
The gas that has risen from the upper opening of the inner pipe 72 is discharged to the outside of the system through the gap between the inner pipe 72 and the outer pipe 71. A manifold 73 made of, for example, stainless steel is engaged with the lower end openings of the outer pipe 71 and the inner pipe 72, and the outer pipe 71 and the inner pipe 72 are held by the manifold 73. The manifold 73 is fixed to a base (not shown).

The lower end of the outer pipe 71 and the manifold 73
Annular flanges 71A and 73A are provided at the upper open end of each, and an O-ring 74 made of an elastic member is arranged between the flanges 71A and 73A to hermetically seal between the two. The lower end portion of the inner pipe 72 is held by a holding portion 75 formed by projecting inward from the middle stage of the inner wall of the manifold 73.

On one side of the lower stage of the manifold 73, there is formed a first bent portion which is bent toward the upper heat treatment portion and is made of, for example, quartz.
The gas introduction pipe 76 of FIG. ₂ penetrates through a sealing member (not shown), and a film forming gas, for example, dichlorosilane (SiH ₂ Cl ₂ ) gas is supplied into the processing container 7. The first gas introduction pipe 76 is connected to a gas supply source (not shown). A second gas introduction pipe 77 made of, for example, quartz and bent toward the upper heat treatment portion penetrates through the seal member (not shown) to the other side of the lower part of the manifold 73. A film forming gas, for example, ammonia (NH ₃ ) gas is supplied. The second gas introduction pipe 77 is connected to the gas supply source.

An exhaust pipe 78, which is connected to an exhaust system such as a vacuum pump (not shown), is connected to the upper stage of the manifold 73, and has been treated to flow down the gap between the inner pipe 72 and the outer pipe 71. The gas can be discharged to the outside of the system and the inside of the processing container 7 can be set to a depressurized atmosphere of a predetermined pressure. A disc-shaped cap portion 79 made of, for example, stainless steel or the like is detachably attached to the lower end opening of the manifold 73 so as to be hermetically sealed via an O-ring 80 made of an elastic member.

A rotary shaft 6 which is rotatable in an airtight state by, for example, a magnetic seal is provided at a substantially central portion of the cap portion 79.
2 penetrates. The rotation shaft 62 is the rotation shaft of the wafer holder 3, and a motor 61 for rotating the wafer holder 3 at a predetermined speed is connected to the lower end portion thereof.
The motor 61 is fixed to the drive arm 53 of the moving mechanism 5, and as the drive arm 53 moves up and down, the cap portion 79 and the rotary shaft 62 move up and down integrally to load and unload the wafer holder 3. It is supposed to do.

An example of the CVD process using the heat treatment apparatus of FIG. 6 will be described. First, the moving mechanism 5 lowers the wafer holder 3 to unload it. Wafer holder 3 to 1
A semiconductor wafer 1 is held. Next, the planar heat source 2
Is driven to generate heat, and the atmosphere at the highest position of the wafer holder 3 is brought into a uniform temperature state of, for example, 700 ° C. The wafer holder 3 is raised by the moving mechanism 5 and loaded into the processing container 7, and the internal temperature of the processing container 7 is maintained at 700 ° C., for example. After evacuating the inside of the processing container 7 to a predetermined vacuum state, the rotating mechanism 6 rotates the wafer holder 3 to integrally rotate the semiconductor wafer 1 held thereon.

At the same time, a film forming gas such as dichlorosilane (SiH ₂ Cl ₂ ) gas is supplied from the first gas introducing pipe 76, and a film forming gas such as ammonia (NH ₃ ) gas is supplied from the second gas introducing pipe 77. Supply. The supplied film forming gas rises in the processing container 7 and is evenly supplied to the semiconductor wafer 1 from above the semiconductor wafer 1. The inside of the processing container 7 is evacuated through the exhaust pipe 78, and is 0.1 to 0.5.
The pressure is controlled to be within a range of Torr, for example, 0.5 Torr, and the film forming process is performed for a predetermined time.

When the film forming process is completed in this way, the process gas in the process container 7 is replaced with an inert gas such as N ₂ and the internal pressure is kept constant in order to proceed to the film forming process for the next semiconductor wafer. The pressure is increased to the pressure, and then the wafer holder 3 is lowered by the moving mechanism 5 to take out the wafer holder 3 and the processed semiconductor wafer 1 from the processing container 7. The processed semiconductor wafer 1 on the wafer holder 3 that has been unloaded from the processing container 7 is replaced with an unprocessed semiconductor wafer, and is loaded into the processing container 7 again in the same manner as described above to perform the film forming process. It

[Embodiment 5] In the heat treatment apparatus shown in FIG. 6, the wafer holder 3 may be fixed and the planar heat source 2 may be moved up and down. Further, when taking out the processed semiconductor wafer 1, it is preferable to first raise the planar heat source 2, the heat insulating material 4, and the outer pipe 71, and then raise the inner pipe 72. Thus, the wafer holder 3
According to the configuration in which the semiconductor wafer 1 is fixed, the mechanical impact force applied to the semiconductor wafer 1 is reduced, so that the thin film on the semiconductor wafer 1 can be prevented from being damaged, and the manifold 73 need not be moved. Therefore, the configuration of the device can be simplified.

Although the present invention has been described based on the embodiments, the heat treatment method and heat treatment apparatus of the present invention can be applied to any of a normal pressure process, a pressure reduction process and a vacuum process. Further, the planar object to be processed is not limited to the circular semiconductor wafer, and may be another planar object to be processed, such as an LCD. Further, the planar heat source may be arranged below and the semiconductor wafer may be arranged above it.

[0041]

As described above, according to the present invention,
The entire surface of the planar object can be rapidly heat-treated at a uniform temperature.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a heat treatment method according to a first embodiment.

FIG. 2 is an explanatory diagram of a heat treatment apparatus according to a third embodiment.

FIG. 3 is an explanatory diagram of a main part of a heat treatment apparatus according to a modified example of Example 3.

FIG. 4 is an explanatory diagram showing an example of a specific form of a planar heat source.

FIG. 5 is an explanatory diagram showing an example of a heat treatment mode in an oxidation / diffusion process.

FIG. 6 is an explanatory diagram of a heat treatment apparatus according to a fourth embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 semiconductor wafer 2 planar heat source 23 heat equalizing member 3 wafer holder 31 holding protrusion 4 heat insulating material 5 moving mechanism 51 motor 52 drive shaft 53 drive arm 6 rotating mechanism 61 motor 62 rotating shaft 7 processing container 8 gas introducing pipe 9 gas Exhaust pipe 71 Outer pipe 71A Flange 72 Inner pipe 73 Manifold 73A Flange 74 O-ring 75 Holding part 76 First gas introduction pipe 77 Second gas introduction pipe 78 Exhaust pipe 79 Cap part 80 O-ring

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Internal reference number FI technical display location H01L 21/324 D 8617-4M

Claims (3)

[Claims] 1. A planar heat source is disposed so as to face a processing surface of a planar object, and the object and the planar heat source are relatively rapidly brought close to each other to be processed. A method for heat treatment, which comprises heat-treating a body. 2. A planar heat source is disposed so as to face a processing surface of a planar object, and the object and the planar heat source are relatively rapidly brought close to each other to be processed. When heat treating a body, a plurality of heat treatments having different temperatures are performed by changing a set value of the shortest distance between the object to be treated and the planar heat source. 3. A planar heat source arranged to face the processing surface of the planar object, and a moving mechanism for relatively bringing the object to be processed and the planar heat source closer to each other. A heat treatment apparatus characterized by the above.