JPH054834B2 - - Google Patents
Info
- Publication number
- JPH054834B2 JPH054834B2 JP61267142A JP26714286A JPH054834B2 JP H054834 B2 JPH054834 B2 JP H054834B2 JP 61267142 A JP61267142 A JP 61267142A JP 26714286 A JP26714286 A JP 26714286A JP H054834 B2 JPH054834 B2 JP H054834B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- region
- layer
- light
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は半導体レーザに関するものである。[Detailed description of the invention] (Industrial application field) This invention relates to a semiconductor laser.
（従来の技術）
従来開発された半導体レーザとして第２図に示
すような量子井戸構造半導体レーザがある（アプ
ライド フイジツクス レターズ、〔Applied
Physics Letters，45，１，1984〕）。この半導体
レーザは、多重量子井戸層２１の両側に多重量子
井戸構造を亜鉛拡散により無秩序化して形成した
無秩序領域２２を有し、この無秩序領域２２によ
りキヤリア及び光の閉じ込めを行なつている。(Prior art) As a conventionally developed semiconductor laser, there is a quantum well structure semiconductor laser as shown in Figure 2 (Applied Physics Letters, [Applied
Physics Letters, 45, 1, 1984]). This semiconductor laser has disordered regions 22 formed by disordering a multiquantum well structure by zinc diffusion on both sides of a multiple quantum well layer 21, and these disordered regions 22 confine carriers and light.
（発明が解決しようとする問題点）
しかしながら、亜鉛の拡散により、多重量子井
戸層２１の結晶性が劣化してしまうから、第２図
の構造の半導体レーザは発振閾値電流が大きいと
いう欠点を有していた。(Problem to be Solved by the Invention) However, since the crystallinity of the multiple quantum well layer 21 deteriorates due to the diffusion of zinc, the semiconductor laser having the structure shown in FIG. 2 has the drawback of a large oscillation threshold current. Was.
本発明の目的は、この問題点を解決し、発振閾
値電流が小さい半導体レーザを提供することにあ
る。 An object of the present invention is to solve this problem and provide a semiconductor laser with a small oscillation threshold current.
（問題点を解決するための手段）
前述の問題点を解決するために本発明が提供す
る半導体レーザは、少なくとも１つ以上の量子井
戸層からなる発光量子井戸領域と、これに隣接し
た少なくとも１つ以上の量子井戸層からなる閉じ
込め領域と、この閉じ込め領域を形成する量子井
戸構造を不純物の拡散により崩した無秩序領域と
を有し、閉じ込め領域の量子井戸の層が発光量子
井戸領域の層より薄いことを特徴とする。(Means for Solving the Problems) In order to solve the above-mentioned problems, a semiconductor laser provided by the present invention includes a light-emitting quantum well region composed of at least one quantum well layer, and at least one quantum well region adjacent to the light-emitting quantum well region. It has a confinement region consisting of three or more quantum well layers, and a disordered region in which the quantum well structure forming this confinement region is disrupted by diffusion of impurities, and the quantum well layer in the confinement region is larger than the light emitting quantum well region. It is characterized by being thin.
（作用）
量子井戸層内でのキヤリヤの層厚方向のエネル
ギーは、井戸層が薄くなるに従つて高くなつてい
く。このため、上述の構造の半導体レーザでは、
閉じ込め領域でのキヤリアのエネルギーが発光量
子井戸領域に比べ高く、閉じ込め領域に注入され
たキヤリアは発光量子井戸領域に移動し、キヤリ
アは発光量子井戸領域に閉じ込められた状態とな
つている。(Function) The energy of the carrier in the layer thickness direction within the quantum well layer increases as the well layer becomes thinner. Therefore, in the semiconductor laser with the above structure,
The energy of carriers in the confinement region is higher than that in the luminescent quantum well region, and the carriers injected into the confinement region move to the luminescent quantum well region, and the carriers are confined in the luminescent quantum well region.
また、不純物の拡散によつて形成した無秩序領
域は、屈折率が閉じ込め領域に比べ小さくなるか
ら、光は発光量子井戸領域及び閉じ込め領域に閉
じ込められる。不純物の拡散により、閉じ込め領
域の量子井戸層の結晶性は悪化するが、キヤリア
は発光量子井戸領域に閉じ込められているから、
この影響を受けず良好な発光特性を保つことがで
きる。 Furthermore, since the disordered region formed by diffusion of impurities has a smaller refractive index than the confinement region, light is confined in the light emitting quantum well region and the confinement region. Although the crystallinity of the quantum well layer in the confinement region deteriorates due to the diffusion of impurities, the carrier is confined in the luminescent quantum well region.
Good light emission characteristics can be maintained without being affected by this.
（実施例）
次に図面を参照して本発明の実施例について説
明する。(Example) Next, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を示す斜視図であ
る。本実施例では、メサストライプ状の溝を形成
したｐ形GaAsからなる半導体基板１上に分子線
エピタキシー法により半導体層２〜８が結晶成長
されている。これら半導体層は、ｐ形GaAsから
なるバツフアー層（厚さ0.1μｍ）２、ｐ形Al0.4
Ga0.6Asからなるｐ形クラツド層（厚さ1μｍ）
３、GaAs（厚さ11nｍ）とAl0.3Ga0.7As（厚さ17n
ｍ）５周期からなる発光量子井戸領域４，GaAs
（厚さ8nｍ）とAl0.3Ga0.7As（厚さ12nｍ）５周期
からなる閉じ込め領域５、亜鉛を拡散することに
より形成した無秩序領域６、ｎ形Al0.4G0.6Asか
らなるｎ形クラツド層（厚さ1μｍ）７、及びｎ
形GaAsからなるキヤツプ層８から構成されてい
る。この半導体構造にはSiO2膜９、ｎ電極１０
及びｐ電極１１が設けてある。 FIG. 1 is a perspective view showing an embodiment of the present invention. In this embodiment, semiconductor layers 2 to 8 are crystal-grown by molecular beam epitaxy on a semiconductor substrate 1 made of p-type GaAs in which mesa stripe-shaped grooves are formed. These semiconductor layers include a buffer layer (thickness 0.1 μm) 2 made of p-type GaAs and a p-type Al 0.4
P-type cladding layer made of Ga 0.6 As (thickness 1 μm)
3. GaAs (thickness 11nm) and Al 0.3 Ga 0.7 As (thickness 17nm)
m) Luminescent quantum well region 4 consisting of 5 periods, GaAs
A confinement region 5 consisting of five periods of Al 0.3 Ga 0.7 As (thickness 8 nm) and Al 0.3 Ga 0.7 As (thickness 12 nm), a disordered region 6 formed by diffusing zinc, and an n-type cladding layer consisting of n-type Al 0.4 G 0.6 As ( thickness 1 μm) 7, and n
The cap layer 8 is made of GaAs. This semiconductor structure includes a SiO 2 film 9, an n-electrode 10
and a p-electrode 11 are provided.
半導体基板１の溝の傾斜部では、結晶成長時に
は、分子線強度が平坦部に比べ小さいため、傾斜
部上に形成した閉じ込め領域５の量子井戸層層厚
は、発光量子井戸領域４に比べ狭く、エネルギー
は高くなつている。このため、キヤリアは、エネ
ルギーの低い発光量子井戸領域４に閉じ込めら
れ、無秩序領域６には流れ出さない。 In the sloped part of the groove of the semiconductor substrate 1, during crystal growth, the molecular beam intensity is smaller than in the flat part, so the quantum well layer thickness of the confinement region 5 formed on the sloped part is narrower than that of the light emitting quantum well region 4. , the energy is high. Therefore, the carriers are confined in the light-emitting quantum well region 4 with low energy and do not flow out into the disordered region 6.
また、GaAs（厚さ8nｍ）とAl0.3Ga0.7As（厚さ
12nｍ）の量子井戸構造を崩して形成した無秩序
領域６の屈折率は、発光量子井戸領域４、閉じ込
め領域５より小さく、光は発光量子井戸領域４と
閉じ込め領域５に閉じ込められている。 In addition, GaAs (thickness 8 nm) and Al 0.3 Ga 0.7 As (thickness
The refractive index of the disordered region 6 formed by disrupting the quantum well structure (12 nm) is smaller than that of the light-emitting quantum well region 4 and the confinement region 5, and light is confined in the light-emitting quantum well region 4 and the confinement region 5.
これらの効果により、一回の結晶成長で横モー
ドの制御された発振閾値電流の小さい半導体レー
ザが得られた。 As a result of these effects, a semiconductor laser with a controlled transverse mode and a small oscillation threshold current was obtained with a single crystal growth.
上述の実施例ではAlGaAs系混晶を用いたがこ
れに限らず他の半導体材料でも本発明は実現でき
る。 Although AlGaAs-based mixed crystal is used in the above-described embodiment, the present invention is not limited to this and can be realized using other semiconductor materials.
（発明の効果）
本発明によれば、一回の結晶成長により形成で
き、横モードの安定した発振閾値電流の小さい高
性能な半導体レーザを得ることができる。(Effects of the Invention) According to the present invention, it is possible to obtain a high-performance semiconductor laser that can be formed by one-time crystal growth, has a stable transverse mode, and has a small oscillation threshold current.
第１図は本発明の一実施例を示す断面図、第２
図は量子井戸構造の従来の半導体レーザを示す断
面図である。
１……半導体基板、２……バツフアー層、３…
…ｐ形クラツド層、４……発光量子井戸領域、５
……閉じ込め領域、６……無秩序領域、７……ｎ
形クラツド層、８……キヤツプ層、９……SiO2
膜、１０……ｎ電極、１１……ｐ電極、２１……
多重量子井戸層、２２……無秩序領域。
FIG. 1 is a cross-sectional view showing one embodiment of the present invention, and FIG.
The figure is a cross-sectional view showing a conventional semiconductor laser having a quantum well structure. 1... Semiconductor substrate, 2... Buffer layer, 3...
...p-type cladding layer, 4...light-emitting quantum well region, 5
... Confinement region, 6 ... Disorder region, 7 ... n
shaped clad layer, 8... cap layer, 9... SiO 2
Membrane, 10...n electrode, 11...p electrode, 21...
Multiple quantum well layer, 22...disordered region.
Claims (1)
光量子井戸領域と、この発光量子井戸領域に隣接
した少なくとも１つ以上の量子井戸層からなる閉
じ込め領域と、この閉じ込め領域を形成する量子
井戸構造を不純物の拡散により崩した無秩序領域
とを有し、前記閉じ込め領域の量子井戸の層が前
記発光量子井戸領域の層より薄いことを特徴とす
る半導体レーザ。1. A light-emitting quantum well region composed of at least one quantum well layer, a confinement region composed of at least one quantum well layer adjacent to the light-emitting quantum well region, and a quantum well structure forming this confinement region are doped with impurities. A semiconductor laser comprising a disordered region disrupted by diffusion of a semiconductor laser, wherein a quantum well layer in the confinement region is thinner than a layer in the light emitting quantum well region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61267142A JPS63120492A (en) | 1986-11-10 | 1986-11-10 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61267142A JPS63120492A (en) | 1986-11-10 | 1986-11-10 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63120492A JPS63120492A (en) | 1988-05-24 |
| JPH054834B2 true JPH054834B2 (en) | 1993-01-20 |
Family
ID=17440664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61267142A Granted JPS63120492A (en) | 1986-11-10 | 1986-11-10 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63120492A (en) |
-
1986
- 1986-11-10 JP JP61267142A patent/JPS63120492A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63120492A (en) | 1988-05-24 |
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