JPH0551662B2 - - Google Patents
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- Publication number
- JPH0551662B2 JPH0551662B2 JP61262045A JP26204586A JPH0551662B2 JP H0551662 B2 JPH0551662 B2 JP H0551662B2 JP 61262045 A JP61262045 A JP 61262045A JP 26204586 A JP26204586 A JP 26204586A JP H0551662 B2 JPH0551662 B2 JP H0551662B2
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- Prior art keywords
- target
- magnetic
- sputtering
- phase
- ferromagnetic
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は薄膜磁気ヘツドあるいは強磁性薄膜抵
抗素子の製造に用いられるスパツタリングターゲ
ツトに関し、特にマグネトロン型スパツタ装置の
陰極として最適なスパツタリングターゲツトに関
する。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a sputtering target used in the manufacture of thin-film magnetic heads or ferromagnetic thin-film resistive elements, and particularly to a sputtering target that is optimal as a cathode for a magnetron-type sputtering device. Regarding the target.
〈従来の技術〉
近年、磁気応用分野では磁心の小型化、高周波
化、高密度化の傾向にあり、特に磁気記録分野で
は高記録密度化に伴い、狭トラツク、短波長、高
周波帯域の方向にある。例えば、8ミリVTR、
固定ヘツド型デジタルオーデイオ、PCM、垂直
磁気記録分野等がそうである。<Conventional technology> In recent years, in the field of magnetic applications, there has been a trend toward smaller magnetic cores, higher frequencies, and higher densities.In particular, in the field of magnetic recording, with the increase in recording densities, there has been a trend toward narrower tracks, shorter wavelengths, and higher frequency bands. be. For example, 8mm VTR,
Examples include fixed head digital audio, PCM, and perpendicular magnetic recording.
磁性素子の小型化、高周波化に対しては、軟磁
性材料の薄板、薄帯が利用されつつあるが、これ
らは十分に対応できる材料であるとはいえない。
そこで注目されているのがスパツタ法により製造
される軟磁性薄膜である。この薄膜は低周波領域
では保磁力、透磁率の点で劣るが、その形状の有
利さから高周波領域では格段に優れている。軟磁
性薄膜は、電気抵抗の低い金属材料に特有のうず
電流損失を著しく低減することが可能であるため
に、高周波帯域における透磁率の低下をおさえる
ことができるからである。 Although thin plates and ribbons of soft magnetic materials are being used to reduce the size and increase the frequency of magnetic elements, these materials cannot be said to be sufficiently compatible.
Therefore, soft magnetic thin films manufactured by the sputtering method are attracting attention. Although this thin film is inferior in terms of coercive force and magnetic permeability in the low frequency range, it is significantly superior in the high frequency range due to its advantageous shape. This is because the soft magnetic thin film can significantly reduce the eddy current loss characteristic of metal materials with low electrical resistance, and thus can suppress the decrease in magnetic permeability in the high frequency band.
一般に、スパツタ法の基本原理はターゲツトを
取付けたカソード、すなわち陰極およびこれと対
向するアノード、すなわち陽極(基板)の間に直
流あるいは交流の高電圧(数kV)を印加してグ
ロー放電を起こさせスパツタリングを行なうこと
である。たとえば真空槽内を1×10-1Torrのア
ルゴン雰囲気に保つて電極間に電圧を印加する
と、電極間にグロー放電が発生する。このグロー
放電により放電空間にアルゴンプラズマが形成さ
れる。このプラズマ中のアルゴン正イオンが、陰
極近傍の陰極電位降下で加速され、ターゲツト陰
極表面に衝突し、ターゲツト表面をスパツタ蒸発
させる。スパツタ粒子は陽極上に配置された基板
上に沈着して、ターゲツト材料からなる薄膜が形
成される。 In general, the basic principle of the sputtering method is to apply a high DC or AC voltage (several kV) between a cathode (cathode) to which a target is attached, and an anode (substrate) facing it to cause a glow discharge. It is to perform sputtering. For example, if a vacuum chamber is maintained in an argon atmosphere of 1×10 -1 Torr and a voltage is applied between the electrodes, a glow discharge will occur between the electrodes. This glow discharge forms argon plasma in the discharge space. The argon positive ions in this plasma are accelerated by the cathode potential drop near the cathode, collide with the target cathode surface, and evaporate the target surface in spatter. The spatter particles are deposited on a substrate disposed on the anode to form a thin film of target material.
ここで、スパツタ法による薄膜作成の欠点は薄
膜の形成速度が遅いことである。この形成速度が
遅いという欠点を改良したスパツタ法の一つとし
てマグネトロン型スパツタ法がある。マグネトロ
ン型スパツタ法は、2極のスパツタリング法の中
で電界と磁界が印加されており、その結果として
陰極近傍に電子がとらえられ陰極近傍で電子によ
る電流が閉じるような領域が形成されるようにし
た方式であり、すなわちターゲツト(陰極)表面
からたたき出された2次電子はローレンツ力によ
つて電界および磁界に垂直の方向に作用する。タ
ーゲツト表面に形成される磁界にトラツプされた
電子はサイクロイド運動をして、ガス分子と衝突
しイオン化を促進する。何回となく衝突を繰り返
した電子は、そのたびごとにエネルギーを失い、
軌道を変えながら基板(陽極)に達しその寿命を
終える。このように、磁界の影響で電子の寿命が
長くなり、低い圧力でも放電を維持するのに十分
な電子を供給し、高密度プラズマが発生する。し
たがつて、大電流密度放電が可能となり、スパツ
タ速度が著しく速くすることができる。 Here, a drawback of forming a thin film using the sputtering method is that the forming speed of the thin film is slow. A magnetron type sputtering method is one of the sputtering methods that improves this drawback of slow formation speed. In the magnetron type sputtering method, an electric field and a magnetic field are applied in a two-pole sputtering method, and as a result, electrons are captured near the cathode and a region is formed near the cathode where the current caused by electrons is closed. In other words, secondary electrons ejected from the target (cathode) surface act in a direction perpendicular to the electric and magnetic fields due to the Lorentz force. Electrons trapped in the magnetic field formed on the target surface undergo cycloidal motion, collide with gas molecules, and promote ionization. Electrons that repeatedly collide lose energy each time,
While changing its orbit, it reaches the substrate (anode) and ends its life. In this way, the lifetime of the electrons is extended under the influence of the magnetic field, providing enough electrons to sustain the discharge even at low pressures, and creating a high-density plasma. Therefore, a large current density discharge is possible, and the sputtering speed can be significantly increased.
〈発明が解決しようとする問題点〉
ここで、マグネトロン型スパツタ法で、例えば
Fe,Co,Niの少なくとも1種が主たる構成元素
である強磁性体ターゲツトをスパツタしようとす
ればターゲツトが裏面の磁石の磁路を短絡(閉磁
路を形成)してしまう。したがつて、磁力線がタ
ーゲツト内部に収束されてマグネトロン放電が困
難となる。そこでターゲツト表面に漏洩磁界を発
生させるためには次の方法が考案されている。<Problems to be solved by the invention> Here, with the magnetron type sputtering method, for example,
If you try to sputter a ferromagnetic target whose main constituent element is at least one of Fe, Co, and Ni, the target will short-circuit the magnetic path of the magnet on the back side (form a closed magnetic path). Therefore, the lines of magnetic force are focused inside the target, making magnetron discharge difficult. Therefore, the following method has been devised to generate a leakage magnetic field on the target surface.
1 ターゲツト裏面の磁石を強くするか、ターゲ
ツトの厚さを薄くしてターゲツトを磁気的に飽
和させた後に表面に漏れてくる磁界成分を利用
する(第2図参照)。1. Make use of the magnetic field component that leaks to the surface after magnetically saturating the target by increasing the strength of the magnet on the back of the target or by reducing the thickness of the target (see Figure 2).
2 ターゲツトにギヤツプを設け磁界の漏れを促
す。2. Create a gap on the target to encourage magnetic field leakage.
3 ターゲツトの温度を上げて透磁率を小さくし
磁界の漏れを促す。3 Raise the temperature of the target to reduce its magnetic permeability and encourage magnetic field leakage.
しかし、ターゲツト裏面の磁石を強くしたり、
ターゲツトの温度を上げたりするにはスパツタ装
置を改造する必要があるだけでなく、装置が大が
かりになつたり、複雑になつたりするので好まし
くない。また、第2図のように磁石1を配すると
局部的に磁界ができるため、強磁性体ターゲツト
2が局部的にへつていくためターゲツトの寿命が
短くなる。またターゲツトが局部的にへると、使
用できない部分が多くのこり無駄が多い。なお3
は銅からなるバツキングプレートである。 However, if you strengthen the magnet on the back of the target,
Increasing the temperature of the target not only requires modification of the sputtering device, but also makes the device large-scale and complicated, which is undesirable. Further, when the magnet 1 is arranged as shown in FIG. 2, a magnetic field is generated locally, and the ferromagnetic target 2 is locally weakened, thereby shortening the life of the target. Furthermore, if the target is partially damaged, there will be many unusable parts, resulting in a lot of waste. Note 3
is a bucking plate made of copper.
また、ターゲツトの厚さを薄くすることはこの
加工費用が高くなるとともに、ターゲツト1枚当
りの寿命が短くターゲツトの交換を頻繁に行わな
くてはならなくなる。さらにターゲツトにギヤツ
プを機械加工により設けることは加工費用が高く
なり実用的でない。 Furthermore, reducing the thickness of the target increases processing costs and shortens the life of each target, requiring frequent replacement of the target. Furthermore, providing a gap in the target by machining increases the processing cost and is not practical.
ここで、ターゲツトに磁気的なギヤツプを容易
にしかも安価に設けることができれば、マグネト
ロン型スパツタ装置の改造もなく、また、局部的
なターゲツトのへりによる寿命の短命化のない薄
膜磁性素子、特に薄膜磁気ヘツドの実用化に大き
く貢献できるものである。 If it were possible to easily and inexpensively provide a magnetic gap on the target, there would be no need to modify the magnetron type sputtering equipment, and there would be no need to modify the magnetron type sputtering equipment, and there would be no shortening of the lifespan due to local edges of the target. This can greatly contribute to the practical application of magnetic heads.
そこで、本発明の目的は上記問題点に鑑み、ス
パツタ装置、特にマグネトロン型スパツタ装置の
陰極として最適な長寿命をもつ(使用効率の高
い)スパツタリングターゲツトを提供することに
ある。 SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a sputtering target having a long life (high efficiency of use) and suitable as a cathode for a sputtering apparatus, particularly a magnetron type sputtering apparatus.
〈問題点を解決するための手段〉
上記目的は、Fe,Co,Niの少なくとも1種が
主たる構成元素である強磁性体スパツタリングタ
ーゲツトにおいて、その表面および内部に非磁性
相を分散して存在させることにより達成される。
すなわち、第1図を参照して、強磁性体ターゲツ
ト2′の表面もしくは表面近傍に非磁性相4が存
在すると、この非磁性相が磁気的なギヤツプとし
て作用しターゲツト2′の裏面の磁石1からの磁
束が非磁性相4の部分で均一に漏洩することにな
る。<Means for solving the problem> The above purpose is to disperse a non-magnetic phase on the surface and inside of a ferromagnetic sputtering target whose main constituent element is at least one of Fe, Co, and Ni. This is achieved by making it exist.
That is, referring to FIG. 1, when a non-magnetic phase 4 exists on or near the surface of the ferromagnetic target 2', this non-magnetic phase acts as a magnetic gap, and the magnet 1 on the back surface of the target 2' The magnetic flux leaks uniformly from the non-magnetic phase 4.
ターゲツトはスパツタリングにより表面が削り
取られる様に消耗していくため、ターゲツト表面
に常に非磁性相が存在するためには、この非磁性
相がターゲツト内部にも存在している必要があ
る。しかも、非磁性相が局部的に存在している
と、ターゲツトの消耗も局部的になり、使用効率
が低くなるために、非磁性相はターゲツト中に分
散して存在させなければならない。 Since the surface of the target is worn away by sputtering, in order for the nonmagnetic phase to always exist on the target surface, this nonmagnetic phase must also exist inside the target. Moreover, if the non-magnetic phase exists locally, the target will be consumed locally and the efficiency of use will be low, so the non-magnetic phase must be present in a dispersed manner within the target.
強磁性体スパツタリングターゲツトとしては、
Fe,Co,Niの少なくとも1種をその構成元素と
する材料である。例えば、Fe−Si,Fe−Si−Al,
Co−Zr,Co−Nb,Co−Cr,Co−Fe,Co−Ni,
Ni−Fe,Ni−Fe−Mo合金もしくはこれらに磁
気特性改善に有効な元素が添加されてなる金属材
料、さらに酸化物系の強磁性体材料等である。 As a ferromagnetic sputtering target,
It is a material whose constituent element is at least one of Fe, Co, and Ni. For example, Fe-Si, Fe-Si-Al,
Co−Zr, Co−Nb, Co−Cr, Co−Fe, Co−Ni,
These include Ni-Fe, Ni-Fe-Mo alloys, metal materials to which elements effective for improving magnetic properties are added, and oxide-based ferromagnetic materials.
非磁性相としては金属、合金、化合物、または
酸化物や窒化物のような非金属物質等から構成さ
れるもので、強磁性体中に存在して磁気的ギヤツ
プとなり得るものであれば良い。この非磁性相が
存在していてもターゲツト自体は強磁性体である
必要があるために非磁性相の体積比率としては10
%以下が好ましい。ここで10%を越えて存在する
場合はスパツタにより得られた薄膜の磁気特性が
悪くなる。 The nonmagnetic phase may be composed of a metal, an alloy, a compound, or a nonmetallic substance such as an oxide or nitride, as long as it exists in the ferromagnetic material and can form a magnetic gap. Even if this non-magnetic phase exists, the target itself must be ferromagnetic, so the volume ratio of the non-magnetic phase is 10.
% or less is preferable. If the amount exceeds 10%, the magnetic properties of the thin film obtained by sputtering will deteriorate.
強磁性体中に非磁性相を分散させる方法の例を
以下に示す。 An example of a method for dispersing a nonmagnetic phase in a ferromagnetic material is shown below.
1 相互に溶解度を有しないかもしくは溶解度の
小さい強磁性体粉末と非磁性粉末を混合、焼結
して強磁性体中に非磁性相を分散させる。1. A ferromagnetic powder and a nonmagnetic powder that do not have mutual solubility or have a low solubility are mixed and sintered to disperse the nonmagnetic phase in the ferromagnetic material.
2 強磁性体中に過飽和に固溶された非磁性物質
を析出もしくは晶出させて非磁性相を分散させ
る。2. Precipitate or crystallize the nonmagnetic substance dissolved in supersaturated solid solution in the ferromagnetic material to disperse the nonmagnetic phase.
次に本発明の実施例を述べる。 Next, examples of the present invention will be described.
〈実施例〉
1 Ni81%、Fe19%に調整された溶湯に、溶湯
重量の1%に相当するAgを添加し、十分攪拌
した後、鋳鉄製の鋳型に注湯し、インゴツトを
得た。このインゴツトに熱間加工、冷間加工、
切削加工を行ない、外径150mm、厚さ6mmの円
板状ターゲツトを作製した。このターゲツトの
結晶粒界およびその近傍にはAgを主成分とす
る非磁性相が分散して存在していることが認め
られた。このターゲツトを用いて、Ar8×10-3
Torr、3kWの条件下でマグネトロンスパツタ
を行なつた。非磁性相を分散させたターゲツト
と分散させないターゲツトの両者の使用効率
(使用前のターゲツトの体積を100として、使用
不可能になつたターゲツトの体積を求め、逆に
使用したターゲツトの体積を%で示したもの)
は、前者が約25%であるのに対し、後者は約6
%であつた。また、このとき前者では広い範囲
にわたつてエロージヨン(外力による金属の損
耗を受ける現象)がおこつていたのに対し、後
者は局部的にしかエロージヨンが進んでいなか
つた。<Example> 1 Ag equivalent to 1% of the weight of the molten metal was added to a molten metal adjusted to 81% Ni and 19% Fe, and after thorough stirring, the molten metal was poured into a cast iron mold to obtain an ingot. This ingot undergoes hot processing, cold processing,
Cutting was performed to produce a disc-shaped target with an outer diameter of 150 mm and a thickness of 6 mm. It was observed that a non-magnetic phase containing Ag as a main component was dispersed at and near the grain boundaries of this target. Using this target, Ar8×10 -3
Magnetron sputtering was performed under Torr and 3kW conditions. Usage efficiency of both targets with and without a non-magnetic phase dispersed (with the volume of the target before use as 100, calculate the volume of the target that is no longer usable, and conversely calculate the volume of the used target in %). (shown)
The former is about 25%, while the latter is about 6%.
It was %. Furthermore, in the former case, erosion (a phenomenon in which the metal is subject to wear and tear due to external force) occurred over a wide range, whereas in the latter case, erosion progressed only locally.
2 Ni81%、Fe19%となるようにNi粉末(−#
100)とFe粉末(−#
100)をボールミルで混
合し、これに総重量の5%に相当するNbC(平
均粒径20μm)粉末をさらに加えて混合した。
次いでこの混合粉末を、内寸法がφ160mm×12
mmのステンレス容器に入れ、真空脱気後封入
し、1250℃、1000気圧の静水圧中で焼結させた
後、外径150m、厚さ6mmの円板状ターゲツト
を作製した。このターゲツトは、マトリツクス
が81%Ni−19%Feで、このマトリツクス中に
非磁性のNbCが分散した複合組織により形成
されていた。前述と同じ条件でマグネトロンス
パツタを行ないターゲツトの使用効率を調べ
た。非磁性相が分散した場合は、使用効率は約
30%であり、Ni,Feのみの場合は約7%であ
つた。エロージヨンの様子も非磁性相が分散し
た場合は広い範囲で認められた。2 Ni powder (-#
100) and Fe powder (-#100) were mixed in a ball mill, and NbC powder (average particle size 20 μm) corresponding to 5% of the total weight was further added and mixed.
Next, add this mixed powder to a powder with internal dimensions of φ160mm x 12
The mixture was placed in a stainless steel container with a diameter of 150 m and a thickness of 6 mm. After vacuum degassing and sealing, the target was sintered at 1250° C. under a hydrostatic pressure of 1000 atm to produce a disc-shaped target with an outer diameter of 150 m and a thickness of 6 mm. This target had a matrix of 81% Ni-19% Fe, and was formed by a composite structure in which non-magnetic NbC was dispersed. Magnetron sputtering was performed under the same conditions as described above to examine the target usage efficiency. When the non-magnetic phase is dispersed, the usage efficiency is approximately
It was 30%, and in the case of only Ni and Fe, it was about 7%. Erosion was also observed over a wide range when the nonmagnetic phase was dispersed.
3 Fe84%、Si10%、Al6%に調整された溶湯に
溶湯重量の4%に相当するTiを添加し、十分
攪拌後、水冷銅鋳型に注湯し、インゴツトを得
た。このインゴツトから外径150mm、厚さ8mm
の円板状ターゲツトを研削加工により作製し
た。このとき、ターゲツトはFe−Si−Al−Ti
から成る強磁性領域と、Tiを主成分とする非
磁性相の複合組織を有していた。前述と同じ条
件でマグネトロンスパツタを行ないターゲツト
の使用効率およびエロージヨンの様子を調べ
た。非磁性相を分散させた場合と、分散させな
い場合の両者を比較すると、前者の使用効率は
約20%であるのに対し、後者は約6%であつ
た。またエロージヨンは前者では広範囲、後者
は局部的であつた。3 Ti equivalent to 4% of the weight of the molten metal was added to the molten metal adjusted to 84% Fe, 10% Si, and 6% Al, and after thorough stirring, the molten metal was poured into a water-cooled copper mold to obtain an ingot. This ingot has an outer diameter of 150 mm and a thickness of 8 mm.
A disc-shaped target was prepared by grinding. At this time, the target is Fe-Si-Al-Ti
It had a composite structure of a ferromagnetic region consisting of Ti and a non-magnetic phase mainly composed of Ti. Magnetron sputtering was performed under the same conditions as described above to examine target usage efficiency and erosion. Comparing the case where the non-magnetic phase was dispersed and the case where it was not dispersed, the usage efficiency in the former was about 20%, while in the latter it was about 6%. In addition, erosion was widespread in the former case and localized in the latter case.
以上より、強磁性体ターゲツトに非磁性相を分
散させることにより、ターゲツトの使用効率が3
倍以上に改善されていることがわかる。 From the above, by dispersing a non-magnetic phase in a ferromagnetic target, the target usage efficiency can be increased by 3.
It can be seen that the improvement is more than double.
なお、各々の実施例により成膜された、薄膜に
ついてそれぞれ磁気特性を調べたが、非磁性相を
分散させたターゲツトを用いたものと、従来のタ
ーゲツトを用いたものとの間に差異は認められな
かつた。 The magnetic properties of the thin films formed in each example were investigated, and no differences were observed between those using a target with a non-magnetic phase dispersed therein and those using a conventional target. I couldn't help it.
〈発明の効果〉
以上のように、本発明によれば、使用効率に優
れたスパツタリングターゲツトが実現される。<Effects of the Invention> As described above, according to the present invention, a sputtering target with excellent usage efficiency can be realized.
第1図は本発明の一実施例によるスパツタリン
グターゲツトを用いたときの磁界分布を表わす原
理図、第2図は従来の強磁性体スパツタリングタ
ーゲツトを用いたときの磁界分布を表わす原理図
である。
1……磁石、2,2′……ターゲツト、4……
非磁性相。
FIG. 1 is a principle diagram showing the magnetic field distribution when a sputtering target according to an embodiment of the present invention is used, and FIG. 2 is a principle diagram showing the magnetic field distribution when a conventional ferromagnetic sputtering target is used. It is a diagram. 1...Magnet, 2,2'...Target, 4...
Non-magnetic phase.
Claims (1)
元素である強磁性体スパツタリングターゲツトに
おいて、非磁性相が分散して存在していることを
特徴とするスパツタリングターゲツト。1. A ferromagnetic sputtering target whose main constituent element is at least one of Fe, Co, and Ni, characterized in that a nonmagnetic phase is present in a dispersed manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262045A JPS63118067A (en) | 1986-11-05 | 1986-11-05 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262045A JPS63118067A (en) | 1986-11-05 | 1986-11-05 | Target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63118067A JPS63118067A (en) | 1988-05-23 |
| JPH0551662B2 true JPH0551662B2 (en) | 1993-08-03 |
Family
ID=17370263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61262045A Granted JPS63118067A (en) | 1986-11-05 | 1986-11-05 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63118067A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941920A (en) * | 1987-11-25 | 1990-07-17 | Hitachi Metals, Ltd. | Sintered target member and method of producing same |
| DE59708376D1 (en) * | 1996-03-19 | 2002-11-07 | Unaxis Balzers Ag | TARGET, MAGNETRON SOURCE WITH SUCH A AND METHOD FOR PRODUCING SUCH A TARGET |
| EP1466999B1 (en) | 2001-12-19 | 2014-10-08 | JX Nippon Mining & Metals Corporation | Method for connecting magnetic substance target to backing plate and magnetic substance target |
| JP4708121B2 (en) * | 2005-08-22 | 2011-06-22 | 昭和電工株式会社 | Target for forming magnetic thin film, magnetic recording medium and method for manufacturing the same, and magnetic recording / reproducing apparatus |
| JP2009221608A (en) * | 2009-07-07 | 2009-10-01 | Mitsui Mining & Smelting Co Ltd | Sputtering target |
| CN112941473B (en) * | 2021-01-28 | 2022-06-17 | 宁波江丰电子材料股份有限公司 | MoTiNi alloy target material and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094761A (en) * | 1977-07-25 | 1978-06-13 | Motorola, Inc. | Magnetion sputtering of ferromagnetic material |
-
1986
- 1986-11-05 JP JP61262045A patent/JPS63118067A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63118067A (en) | 1988-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |