JPH0551907B2 - - Google Patents

Description

[Detailed description of the invention]

[Technical field to which the invention pertains] The present invention is directed to light (here, light in a broad sense, ultraviolet light).
rays, visible light, infrared rays, x-rays, gamma rays, etc.
Ru. ) that are sensitive to electromagnetic waves.
This invention relates to a true light-receiving member. [Description of conventional technology] In the image forming field, for electrophotographic light receiving members.
As photoconductive materials forming the photoreceptive layer,
High sensitivity and SN ratio [photocurrent (Ip)/dark current (Id)]
Highly compatible with the spectral characteristics of the electromagnetic waves being emitted
It has absorption spectrum characteristics and photoresponsiveness.
Fast and has the desired dark resistance value during use.
Characteristics such as being non-polluting to the human body are required.
be done. Especially when used in the office as a business machine.
An electrophotographic light receiver incorporated into an electrophotographic device
In the case of parts, the above-mentioned pollution-free properties during use
is an important point. Based on these points, light guide has recently been attracting attention.
Amorphous silicon (hereinafter referred to as A-Si) is used as an electrical material.
For example, German Publication No. 2746967
Publication No. 2855718 describes a photoreceptor for electrophotography.
Its application as a material is described. However, the conventional photoreceptive layer composed of A-Si
The light-receiving member for electrophotography has a dark resistance value, a light sensitivity
Electrical, optical, and photoconductive properties such as photoresponsiveness and photoresponsiveness
and usage environment characteristics, as well as stability over time and
In terms of durability, each has improved characteristics individually.
However, in order to improve the overall characteristics,
The reality is that there is room for further improvement. For example, when applied to light-receiving members for electrophotography
In order to simultaneously achieve high light sensitivity and high dark resistance,
Conventionally, when using the residual potential,
It is often observed that this kind of light-receiving member remains
If you continue to use it repeatedly for a long time, it may become damaged due to repeated use.
The so-called go
There are fewer inconveniences such as strike phenomenon.
I didn't want to go. In addition, when configuring the photoreceptive layer with A-Si material,
is to improve its electrical and photoconductive properties.
In addition, hydrogen atoms or halo atoms such as fluorine atoms and chlorine atoms
boron atoms and for control of electrical conduction type.
atoms, phosphorus atoms, etc., or for other property improvements.
Other atoms are included in the photoconductive layer as constituent atoms, respectively.
However, how these constituent atoms are contained
Depending on the electrical or photoconductive
There were cases in which problems occurred with characteristics and pressure resistance. That is, for example, when a formed photoconductive layer is exposed to light,
Lifespan of photocarriers generated in this layer
is not sufficient or the image transferred to the transfer paper
It is commonly called ``white nuke''. Local discharge destruction
Image defects that may be caused by the phenomenon or cleaning
This is thought to be due to the friction caused by using a blade.
Ru. Image defects commonly referred to as "white stripes" occur.
Alternatively, for example, a surface layer of a certain thickness may be applied to the surface.
This makes it virtually transparent to the light used.
In some cases, the surface may become damaged due to wear caused by long-term rubbing.
Changes occur in the reflection spectrum of the layer, especially in sensitivity etc.
There are few cases where unfavorable changes occur over time.
It was gone. Also, when used in a humid atmosphere,
Or use it immediately after being left in a humid atmosphere for a long time.
This rarely causes what is commonly called blurry images.
Nakatsuta. Therefore, efforts were made to improve the properties of the A-Si material itself.
On the other hand, when designing a light-receiving member, the above-mentioned
Layer structure and layer structure so that all problems can be solved
Scientific organization, preparation methods, etc. need to be devised. [Purpose of the invention] The present invention is directed to the conventional
In an electrophotographic light-receiving member having a light-receiving layer of
The purpose is to solve various problems that arise. That is, the main purpose of the present invention is to
The photoconductive properties mostly depend on the usage environment.
It is virtually always stable and has excellent resistance to light fatigue.
It is durable even after repeated use without causing any deterioration phenomenon.
Excellent durability and moisture resistance, with no or almost no residual potential
A photoreceptive layer composed of A-Si that is not observed
An object of the present invention is to provide a light-receiving member for electrophotography having
Ru. Another object of the invention is the layer provided on the support.
and the support and between each laminated layer.
Excellent adhesion, dense and stable structure
A photoreceptive layer composed of A-Si with high layer quality.
An object of the present invention is to provide a light-receiving member for electrophotography having
Ru. Still another object of the present invention is to provide a photoreceptor for electrophotography.
When applied as a material, charging for electrostatic image formation
Sufficient charge retention ability during processing,
An excellent electronic method to which the child photography method can be applied very effectively.
A photoreceptive layer composed of A-Si that exhibits photographic properties.
An object of the present invention is to provide a light-receiving member for electrophotography having
Ru. Another object of the invention is to improve the image quality in long-term use.
There are no defects or blurred images, high density, and hard
High quality with clear contrast and high resolution
A- for electrophotography that allows you to easily obtain images
Proposes a light-receiving member having a light-receiving layer made of Si.
It is about providing. Still another object of the present invention is to provide high photosensitivity, high SN
Made of A-Si with specific characteristics and high electrical voltage resistance.
A light-receiving member for electrophotography having a light-receiving layer made of
The goal is to provide the following. [Structure of the invention] The electrophotographic light-receiving member of the present invention comprises a support and a light-receiving member for electrophotography.
Silicon atoms and germanium atoms are placed on the support.
a long-wavelength photosensitive layer that contains and is sensitive to long-wavelength light
, which has silicon atoms as its base material and is a member of group 1 of the periodic table.
is a charge injection blocking layer containing atoms belonging to the group
, with silicon atoms as the base material, hydrogen atoms and halo atoms
At least one of the Gen atoms is a constituent element.
It is composed of an amorphous material that exhibits photoconductivity.
Photoconductive layer, silicon atoms, carbon atoms, and hydrogen atoms
It is composed of an amorphous material containing as a constituent element
and a light-receiving layer having the above-mentioned
In the surface layer, the surface layer and the photoconductive layer
The concentration of carbon atoms decreases toward the interface of
In order to change the concentration distribution of the above-mentioned constituent elements in the layer thickness direction,
and within the surface layer in the layer thickness direction of hydrogen atoms.
Characterized by a maximum concentration of 41-70 atomic%
Ru. The surface layer contains halogen atoms.
Alternatively, the photoconductive layer may contain carbon atoms or oxygen atoms.
Contains at least one type of nitrogen atom
You may do so. Prevents charge injection from the support during charging processing
The charge injection blocking layer has a layer thickness direction.
Structured with a distribution state that is uniformly distributed or mostly distributed on the support side.
Elements belonging to groups or groups of the periodic table as constituent atoms
Contains substances that control conductivity, such as
Also good. Furthermore, the charge injection blocking layer is coated uniformly in the layer thickness direction or
Many on the support side. Oxygen atoms in the charge injection blocking layer
or acid as a component in a widely distributed distribution state.
Nitrogen that may contain elementary atoms or/and nitrogen atoms
The atoms may be internal to the support side. Further, the photoconductive layer contains carbon atoms as constituent elements,
Oxygen atoms, nitrogen atoms, and substances that control conductivity
(atom belonging to group or group of the periodic table)
It may contain at least one kind. In the electrophotographic light receiving member of the present invention, the
The long wavelength photosensitive layer contains silicon atoms as constituent atoms.
and germanium atoms, and optionally hydrogen atoms.
Ammo containing at least one halogen atom
Rufus material, so-called hydrogenated amorphous silica
Congermanium, halogenated amorphous silicate
Congermanium or halogen-containing hydrogenated atom
Morphus silicon germanium (hereinafter referred to as these
"A-SiGe(H,X)" is used as a generic notation
It consists of "do". It was designed to have the layer structure described above.
The light-receiving member for electrophotography of the present invention has the above-mentioned problems.
Extremely superior electrical and optical technology that can solve all problems
Indicates optical properties, photoconductive properties, pressure resistance, and usage environment characteristics.
vinegar. That is, it was applied as a light-receiving member for electrophotography.
In some cases, the residual potential has no effect on image formation.
Its electrical characteristics are stable, high sensitivity, and high
It has a signal-to-noise ratio and is resistant to light fatigue and repeated use.
Good usage characteristics, high density, and vivid halftones.
Easily produce clear, high-resolution, high-quality images.
You can set and repeat it. Hereinafter, according to the drawings, the photoreceptor for electrophotography of the present invention will be described.
The members will be explained in detail. FIG. 1 illustrates the electrophotographic light receiving member of the present invention.
FIG. 2 is a schematic configuration diagram schematically shown for clarity. The light-receiving member for electrophotography shown in FIG.
The layer 100 is a support 101 for a light-receiving member.
The photoreceptive layer 100 is provided on a long-wavelength
Long photosensitive layer 102, charge injection blocking layer 103, A-
Photoconductive material consisting of Si(H,X) and having photoconductivity
layer 104, silicon atoms, carbon atoms and hydrogen atoms
It is composed of an amorphous material whose constituent elements are
The concentration of these components is at least as high as that of the photoconductive layer.
The consistency of the optical bandgap at the interface of
It has changed to the shape obtained, and the hydrogen atom
Surface layer 105 with a maximum concentration of 41 to 70 atomic percent
It has a layered structure consisting of: Hereinafter, the light receiving member for electrophotography shown in FIG.
Each layer constituting this will be described. support The support used in the present invention includes conductive
It may be electrically conductive or electrically insulating. conductive support
Examples of materials include NiCr, stainless steel, Al,
Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd etc.
Examples include metals and alloys thereof. As the electrically insulating support, polyester, polyester, etc.
polyethylene, polycarbonate, cellulose, aluminum
acetate, polypropylene, polyvinyl chloride, polycarbonate
Polyvinylidene chloride, polystyrene, polyamide, etc.
synthetic resin film or sheet, glass, ceramic
Mitsuku, paper, etc. are usually used. These electric shock
The edge support preferably has at least one surface.
The surface is electrically conductive treated, and the other surface is electrically conductive.
It is desirable that a layer of . For example, if it is glass, Ni, Ni,
Cr, Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti,
Pt, Pd, In₂O₃, SnO₂, ITO (In₂O₃+SnO₂)etc
Conductivity is imparted by providing a thin film consisting of
or synthetic resin film such as polyester film.
For ilms, NiCr, Al, Ag, Pb, Zn, Ni,
Gold such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc.
Vacuum evaporation, electron beam evaporation, sputtering
Provided on the surface with a ring etc., or attached with the metal mentioned above.
The surface is laminated to make it conductive.
Granted. The shape of the support body may be cylindrical or base.
It can be of any shape such as a bolt shape or a plate shape, and can be shaped as desired.
For example, the shape is determined by
In the case of copying, it should be in the form of an endless belt or a cylinder.
is desirable. The thickness of the support can be adjusted to
determined as appropriate to form a photographic light-receiving member.
However, flexibility is required as a light-receiving member for electrophotography.
If the material is
It is made as thin as possible within the specified range. So
However, in such cases, the manufacturing and handling of the support
Above, from the viewpoint of mechanical strength etc., it is usually 10μ or more.
It can be done. In particular, image recording using coherent light such as laser light
In the case of
In order to eliminate image defects caused by so-called interference fringe patterns,
The surface of the support may be provided with irregularities. The unevenness provided on the surface of the support is a V-shaped cut.
Cutting tools with blades using milling machines, lathes, etc.
Fixed in place on the machine tool, e.g. cylindrical support
according to a program designed in advance according to the desired
regularly move it in a specified direction while rotating it.
By accurately cutting the support surface,
It is formed with the desired uneven shape, pitch, and depth. child
The unevenness formed by cutting methods such as
The inverted V-shaped linear protrusion that comes out is located at the center of the cylindrical support.
It has a spiral structure centered on the axis. Inverted V-shaped protrusion
The spiral structure of the part can be double or triple spiral structure, or
may be regarded as a crossed spiral structure. Alternatively, in addition to the spiral structure, parallel along the central axis
A line structure may also be introduced. Vertical cross-sectional shape of the uneven convex portion provided on the support surface
The shape is the layer thickness within the microcolumn of each layer formed.
controlled heterogeneity of the support and the support
Good adhesion between directly applied layers and desired
It is shaped like an inverted V to ensure electrical contact.
but preferably substantially as shown in FIG.
Isosceles triangle, right triangle or scalene triangle
It is desirable that These shapes are especially second class.
Side triangles and right triangles are preferred. In the present invention, the surface of the support is controlled in a controlled manner.
Each dimension of unevenness provided on the surface is as follows.
Taking these points into consideration, the objective of the present invention can be achieved as a result.
It is set up so that it can be achieved. That is, the first is A-Si(H,X) constituting the photosensitive layer.
The layer is structurally sensitive to the conditions of the surface on which it is formed.
Therefore, the layer quality varies greatly depending on the surface condition. Therefore, the deterioration of the layer quality of the A-Si(H,X) layer is
An uneven design is provided on the surface of the support to prevent
It is necessary to set the image. Second, the free surface of the photoreceptor layer has extreme irregularities.
When cleaning after image formation,
It becomes impossible to perform the cleaning completely. Also, when cleaning the blade,
There is a problem in that the damage to the blade accelerates. The above-mentioned layer deposition problems and the electrophotographic process
Investigate process problems and conditions to prevent interference fringes.
As a result, the pitch of the recesses on the surface of the support was found to be favorable.
preferably 500 μm to 0.3 μm, more preferably 200 μm to
It is desirable that the thickness be 1 μm, optimally 50 μm to 5 μm. Also, the maximum depth of the recess is preferably 0.1μm
~5μm, more preferably 0.3μm to 3μm, optimally
It is desirable that the thickness be 0.6 μm to 2 μm. Support surface
If the pitch and maximum depth of the recess are within the above range,
In this case, the slope of the slope of the recess (or linear protrusion) is
Preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees
degree, optimally 4 degrees to 10 degrees. Also, the layer pressure of each layer deposited on such a support
The maximum difference in layer thickness due to the non-uniformity of
Preferably 0.1 μm to 2 μm, more preferably 0.1 μm
~1.5μm, optimally 0.2μm to 1μm.
Delicious. In addition, when using coherent light such as laser light,
Another method to eliminate image defects caused by interference fringe patterns
The surface of the support is made up of multiple spherical trace depressions.
A convex shape may also be provided. That is, the surface of the support is required for electrophotographic light receiving members.
It has finer irregularities than the required resolution, and
The unevenness is due to a plurality of spherical trace depressions.
Ru. Below, the electrophotographic light receiving member of the present invention will be described.
The shape of the surface of the support and its preferred manufacturing example are described in this section.
As will be explained with reference to FIGS. 22 and 23, the present invention
Shape of support in light-receiving member and manufacturing method thereof
is not limited to this. FIG. 22 shows the electrophotographic light receiving member of the present invention.
A typical example of the surface shape of the support is shown below.
Partially enlarged and schematic illustration of a part of the uneven shape
It is something. In FIG. 22, 1601 is a support, 160
2 is the support surface, 1603 is a rigid true sphere, 1604
indicates a spherical trace depression. Furthermore, FIG. 22 shows the steps taken to obtain the surface shape of the support.
An example of a preferred manufacturing method is also shown. Immediately
In other words, the rigid true sphere 1603 is placed from the support surface 1602.
Let it fall naturally from a predetermined height to the support surface.
By colliding with 1602, a spherical depression 160 is created.
This shows that it is possible to form 4. And almost
Using a plurality of rigid true spheres 1603 with the same diameter R',
Drop them simultaneously or sequentially from the same height h.
By making the support surface 1602 almost the same
Multiple spherical marks with one radius of curvature R and the same width D
A trace depression 1604 can be formed. As mentioned above, there are multiple spherical trace depressions on the surface.
The following is a typical example of a support with an uneven shape formed by
It is shown in Figure 23. By the way, the support for the electrophotographic light receiving member of the present invention
The curvature half of the uneven shape due to the spherical trace depression on the surface of the holding body
The diameter R and width D of the light receiving member of the present invention are
Efficiently prevents interference fringes in
This is an important factor in achieving this goal. The inventors
As a result of various experiments, we have discovered the following.
Ta. That is, the radius of curvature R and the width D are as follows: D/R≧0.035 If it satisfies the
0.5 or more Newton rings due to ring interference
It will exist. Furthermore, the following formula: D/R≧0.055 If it satisfies the
There is one or more Newton rings due to ring interference.
There will be. Because of these things, it occurs throughout the photoreceptor member.
Interference fringes are dispersed within each trace depression, allowing light reception.
In order to prevent the occurrence of interference fringes on parts,
D/R should be 0.035, preferably 0.055 or more. desirable. In addition, the width D of the unevenness due to the trace depression is at most
About 500μm, preferably 200μm or less, more preferably
The thickness is preferably 100 μm or less. Figure 21 shows the unevenness formed by the above method.
The slope of the unevenness on the support body 1501 having the shape
A light-receiving portion including a light-receiving layer 1500 along the surface.
It shows the material. 1502 is a long wavelength photosensitive layer 150
3 is a charge injection blocking layer, 1504 is a photoconductive layer, 15
05 is a surface layer. Surface layer 1505 is a free surface
1506. In the case of the light-receiving member shown in FIG.
formed in surface 1506 and photoreceptive layer 1500.
Since the degree of inclination at the interface differs, the free table
formed in surface 1506 and photoreceptive layer 1500.
The reflection angles of the reflected light at the interfaces are different. obey
Therefore, a phenomenon corresponding to the so-called Newton's ring phenomenon occurs.
Air ring interference occurs and interference fringes are dispersed within the depression.
It is about to be done. This allows these photoreceptors to
The visible image that appears through the material is microscopic.
Even if interference fringes appear, they cannot be seen.
It is something that cannot be grasped visually. Immediately
The use of a support having such a surface shape is
A light-receiving layer formed by forming a multilayered light-receiving layer on top of the light-receiving layer.
The light that has passed through the light-receiving layer is
Reflected by interface and support surface, and they interfere
This may cause the formed image to have a striped pattern.
Efficiently prevent Long wavelength photosensitive layer The long wavelength photosensitive layer 102 in the present invention is A-
Composed of SiGe (H,
The rumanium atoms are uniformly distributed in the layer.
Alternatively, it may be included uniformly in the layer thickness direction.
However, it is acceptable if the distribution concentration is uneven.
stomach. However, in both cases, the surface of the support
In the in-plane direction, the distribution is uniform and there is no deviation.
The inclusion results in uniform properties in the in-plane direction.
It is also necessary from the perspective of measuring the That is, long wavelength light sensitivity
It is evenly contained in the thickness direction of the optical layer 102.
And what is the side on which the support body 101 is provided?
towards the opposite side (free surface 106 side of the photoreceptive layer)
On the other hand, the shape is more distributed toward the support 101 side.
or vice versa.
It is contained in the long wavelength photosensitive layer so that In the light receiving member of the present invention, as described above,
Germanium atoms contained in the long wavelength photosensitive layer
In the layer thickness direction, the distribution state of
The distribution state is taken in the in-plane direction parallel to the surface of the support.
It is desirable to have a uniform distribution state. Also, in one of the preferred embodiments, a long
Distribution of germanium atoms in the wavelength photosensitive layer
The state is such that germanium atoms are continuously distributed throughout the entire layer.
Evenly distributed, the distribution of germanium atoms in the layer thickness direction
The cloth density C is from the support side toward the charge injection blocking layer.
Given the decreasing change, long wavelength light sensitivity
Excellent affinity between the optical layer and the charge injection blocking layer
In addition, as will be described later, there is a gap at the end of the support.
Extremely increase the distribution concentration C of rumanium atoms
In some cases, when using a semiconductor laser, etc., the light
The conductive layer absorbs almost no light at long wavelengths.
In the long wavelength photosensitive layer, virtually complete absorption is achieved.
can prevent interference caused by reflection from the support surface.
It can be stopped. 2 to 7 show the photoreceptor in the present invention.
Germanium contained in the long wavelength photosensitive layer of the member
Typical case where the distribution state of the layer thickness direction is non-uniform
An example is shown. In Figures 2 to 7, the horizontal axis is germanium.
The vertical axis represents the distribution concentration C of atoms in the long wavelength photosensitive layer.
indicates the layer thickness of t_Bis the long wavelength photosensitive layer on the support side.
The position of the end face is t_Tis the long wavelength on the side opposite to the support side
The position of the end face of the photosensitive layer is shown. That is, germanium
The long wavelength photosensitive layer containing mu atoms is t_BT from the side_T
Layering takes place towards the sides. Figure 2 shows the gel contained in the long wavelength photosensitive layer.
The first source of the distribution state of rumanium atoms in the layer thickness direction
A type example is shown. In the example shown in Figure 2, the content of germanium atoms is
The surface on which the long wavelength photosensitive layer is formed and the length
Interface position t in contact with the surface of the wavelength photosensitive layer_BMoret₁
Up to the position, the distribution concentration C of germanium atoms is
C₁While the germanium atom takes a certain value,
Contained in the formed long wavelength photosensitive layer, located at the position t₁Yo
ri is concentration C₂The interface position t_TGradually continuous until
has been reduced. Interface position t_Tgel in
The distribution concentration C of manium atoms is C₃It is said that In the example shown in Figure 3, the contained
The distribution concentration C of rumanium atoms is at position t_BMore position_T
Concentration C up to_Fourgradually and continuously decreasing from
position t_TConcentration C at_FiveForm a distribution state such that
are doing. In the case of Figure 4, position t_BMore position₂until then
The distribution concentration C of rumanium atoms is the concentration C₆and a constant value
and position t₂and position t_TGradually, between
Continuously decreased position t_TIn , the distribution concentration C
is substantially zero (here, substantially zero and
is below the detection limit amount. ) In the case of Figure 5, the distribution concentration of germanium atoms is
Degree C is position t_BMore position_Tup to the concentration C₈Than
Continuously gradually decreased position t_Tsubstantially in
It is said to be zero. In the example shown in Figure 6, germanium atoms
The distribution concentration C of is given by the position t_Band position t₃In between,
Concentration C₉is a constant value, and the position t_TIn the case of concentration
C_TenIt is said that position t₃and position t_TThe distribution density is
The degree C is a linear function of the position t₃More position_Tup to
has been reduced. In the example shown in FIG. 7, the position t_BMore position_T
Until , the distribution concentration C of germanium atoms is
Degree C₁₁It decreases linearly so that it more effectively reaches zero.
There are a few. As described above, from Fig. 2 to Fig. 7, long wavelength photosensitive
germanium atoms contained in the layer in the layer thickness direction
As we have explained some typical examples of distribution states, the present invention
In the light, on the support side, germanium
It has a part with a high distribution concentration C of atoms, and the interface t_Tto the side
In this case, the distribution concentration C is smaller than that on the support side.
germanium atom with a reduced portion
When the distribution state is provided in the long wavelength photosensitive layer
is cited as one of the preferred examples. Germani
Germanium atoms are distributed in the layer thickness direction.
The maximum value Cmax of the distribution concentration of silicon atoms is
preferably 1000 atomic ppm or more relative to the sum of
More preferably 5000 atomic ppm or more, optimally 1×
Ten^FourThe distribution state can be such that it is considered to be more than atomic ppm.
It is desirable that the layers be formed in such a manner that the In the present invention, the long wavelength photosensitive layer contains
The content of germanium atoms in the present invention is as follows:
Appropriately as desired so that the purpose is effectively achieved
However, the favorable value for the sum with the silicon atom
Preferably 1~10×10^FiveAtomic ppm, more preferably
100~9.5×10^FiveAtomic ppm, optimally 500 to 8×10^Five
Preferably in atomic ppm. The above-mentioned long wavelength photosensitive layer further controls the conductivity.
At least one of the substances, oxygen atoms, and nitrogen atoms
It may contain one. In addition, as the substance that controls the conductivity, semi-
It is possible to list so-called impurities in the field of conductors.
Since, in the present invention, the period that gives p-type conduction characteristics is
Atoms belonging to group in the Table of Contents (hereinafter referred to as "group atoms")
say. ), or periodic table number giving N-type conduction characteristics.
Atoms belonging to the group (hereinafter referred to as "group atoms")
Use. Specifically, the group atoms include B
(boron), Al (aluminum), Ga (gallium), In
(indium), Tl (thallium), etc., especially
B, Ga is preferred. As group atoms,
Physically, P (phosphorus), As (arsenic), Sb (antimony),
Bi (bismuth), etc., and P and As are particularly suitable.
Ru. In the present invention, the long wavelength photosensitive layer contains
The content of the substance that controls the conduction properties is preferably
Preferably, 0.01 to 5×10^FiveAtomic ppm, more preferred
is 0.5~1×10^FourAtomic ppm, optimally 1-5×
Ten³Preferably, it is expressed in atomic ppm. In the present invention, A-SiGe (H,
For example, to form a long-wavelength photosensitive layer,
-Discharge method, microwave discharge method, sputtering
Discharge phenomena such as ion plating method or ion plating method
It is made by a vacuum deposition method using . example
For example, by glow discharge method, A-SiGe(H,X)
To form a long wavelength photosensitive layer consisting of
Basically, Si supply that can supply silicon atoms (Si)
Supply raw material gas and germanium atoms (Ge) for
Feedstock gas for Ge supply and water if necessary
Raw material gas or/and halogen source for introducing elementary atoms (H)
The raw material gas for introducing the child
Introduce the gas at the desired pressure into the deposition chamber and
Create a glow discharge inside the device and place it in a predetermined position.
A-SiGe (H,
It is sufficient to form a layer consisting of X). Also, Germani
In order to contain umium atoms in a non-uniform distribution state,
The desired rate of change curve for the distribution concentration of germanium atoms
from A-SiGe(H,X) while controlling according to
It is sufficient to form a layer that Also, sputtering method
For example, inert materials such as Ar, He, etc.
gas or a mixture of gases based on these gases
A target composed of Si in an atmosphere, or
This target and a target composed of Ge
or a mixed tar of Si and Ge.
He, Ar, etc. can be added as necessary using a
The raw material gas for Ge supply diluted with dilution gas is
Hydrogen atoms (H) or/and halogen atoms as necessary
The gas for introducing the child (X) into the deposition chamber for sputtering.
Introduce and form a plasma atmosphere of the desired gas
accomplished by things. Distribution of germanium atoms
In case of uniformity, the raw material gas for the Ge supply
while controlling the gas flow rate according to the desired rate of change curve.
Then sputter the said target.
Good. In the case of ion plating, for example,
Crystalline silicon or single crystal silicon and polycrystalline germanium
aluminum or single crystal germanium as evaporation sources, respectively.
The evaporation source is housed in the evaporation board as a
Thermal method or electron beam method (FB method)
etc. to heat and evaporate the flying evaporated matter to the desired gas.
Except for passing through a spasm atmosphere,
This can be done in the same way as the talling method.
Ru. Raw material gas for supplying Si used in the present invention
SiH is a substance that can become_Four,Si₂H₆,Si₃H₈，
Si_FourH_Tensilicon hydride in a gaseous state or capable of being gasified, such as
Elements (silanes) are listed as being effectively used.
In particular, ease of handling during layer creation work and Si supply
SiH in terms of good feeding efficiency, etc._Four,Si₂H₆is preferable
It is mentioned as Substances that can be used as raw material gas for Ge supply include:
GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀gaseous such as
germanium hydride is effective
It is used for layer creation, especially for layer creation.
Ease of handling during work, good Ge supply efficiency, etc.
So, GeH_Four,Ge₂H₆,Ge₃H₈is preferred.
can be mentioned. For introducing halogen atoms used in the present invention
Many halogenated gases are effective as raw material gases for
For example, halogen gas, halogen
compounds, interhalogens, halogen-substituted
Gaseous or gasifiable materials such as silane derivatives
Preferred examples include rogene compounds. Furthermore, silicon atoms and halogen atoms
Constituent gaseous or gasifiable halo
Silicon hydride compounds containing gen atoms are also effective.
In the present invention, the following can be mentioned. Halogen compounds that can be suitably used in the present invention
Specifically, the substances include fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF₃，
BrF_Five,BrF₃,IF₃,IF₇, ICl, IBr, etc.
Intermediate compounds can be mentioned. Silicon compounds containing halogen atoms, so-called halogens
Examples of silane derivatives substituted with carbon atoms include
For example, SiF_Four,Si₂F₆,SiCl_Four, SiBr_Fouretc.
Silicon halogenide can be cited as a preferred option.
come. Adopts silicon compounds containing such halogen atoms
The characteristic light guide of the present invention is produced by the glow discharge method.
When forming electrical parts, raw material gas for Ge supply is required.
Hydrogenation as a raw material gas that can supply Si along with gas
can be deposited on the desired support without the use of silicon gas.
Long wavelength photosensitivity made of A-SiGe containing rogen atoms
A light layer can be formed. Long wave containing halogen atoms according to the glow discharge method
When producing a long-photosensitive layer, basically, for example,
Silicon halide and Ge, which are the raw material gas for Si supply
germanium hydride, which is the raw material gas for supply;
Ar, H₂, He, etc., at a specified mixing ratio and gas flow.
Deposition to form a long wavelength photosensitive layer
into the chamber and generate a glow discharge to release these gases.
By forming a plasma atmosphere of
It is capable of forming a long wavelength photosensitive layer on the support.
However, it is easier to control the ratio of hydrogen atoms introduced.
In addition to these gases, hydrogen gas or
A desired amount of silicon compound gas containing hydrogen atoms is also mixed.
A layer may also be formed. In addition, each gas can be used not only as a single species but also in a predetermined mixing ratio.
It is safe to use a mixture of multiple types.
Ru. Sputtering method, ion plating method
In either case, halogen atoms are included in the layer formed.
To introduce the above-mentioned halogen compounds or the above-mentioned
A silicon compound gas containing halogen atoms is introduced into the deposition chamber.
to form a plasma atmosphere of the gas.
That's fine. In addition, when introducing hydrogen atoms, hydrogen atom guide
Necessary raw material gas, e.g. H₂, or the above
Gases such as silanes and/or germanium hydride
The gas is introduced into a deposition chamber for sputtering.
All that is required is to form a plasma atmosphere of gases. In the present invention, the raw material for introducing halogen atoms
The above-mentioned halogen compounds or halides as gases
Silicon compounds containing rogens are used as effective
In addition, HF, HCl,
Hydrogen halides such as HBr, Hi, SiH₂F₂,SiH₂I₂，
SiH₂Cl₂, SiHCl₃,SiH₂Br₂,SiHBr₂etc. halogen
Substituted silicon hydride, and GeHF₃, GeH₂F₂，
GeH₂F, GeHCl₃, GeH₂Cl₂, GeH₃Cl,
GeHBr₃, GeH₂Br₂, GeH₂Br, GeHI₂，
GeH₂I₂, GeH₃Hydrogenated halogenated germanium such as I
Halo containing hydrogen atoms as one of its constituent elements, such as
Genide, GeF_Four, GeCl_Four, GeBr_Four, GeI_Four, GeF₂，
GeCl₂, GeBr₂, GeI₂germanium halides such as
Substances that are in a gaseous state or can be gasified, such as
Listed as an effective starting material for forming long-wavelength photosensitive layers.
You can do it. Among these substances, halogenated substances containing hydrogen atoms
When forming a long-wavelength photosensitive layer, halogens are added to the layer.
Control of electrical or photoelectric properties at the same time as introducing atoms
Hydrogen atoms, which are extremely effective for control, are also introduced, so this book
In the invention, it is used as a suitable raw material for introducing halogen.
used. Hydrogen atoms are structurally introduced into the long wavelength photosensitive layer.
In addition to the above,₂, or SiH_Four,Si₂H₆，
Si₃H₈,Si_FourH_TenIn order to supply Ge, silicon hydride such as
germanium or germanium compound, or
Yes, GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten，
Ge_FiveH₁₂,Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀etc
silicon to supply germanium hydride and Si
or a silicon compound in the deposition chamber.
This can also be done by causing a discharge. In a preferred embodiment of the invention, the light receiving
Hydrogen atoms contained in the long wavelength photosensitive layer of the container member
The amount of (H) or the amount of halogen atom (X) or the amount of hydrogen atom and
The sum of the amounts of rogen atoms (H+X) is preferably
0.01-40 atomic%, more preferably 0.05-30 atomic%
%, optimally 0.1 to 25 atom%.
stomach. Hydrogen atoms (H) or
To control the amount of / and halogen atoms (X), e.g.
For example, support temperature or/and hydrogen atom (H);
Starting materials used to contain rogene atoms (X)
Controls the amount of material introduced into the deposition system, the discharge force, etc.
All you have to do is control it. In the present invention, nitrogen atoms are added to the long wavelength photosensitive layer.
In order to contain nitrogen, nitrogen is added during the formation of the long wavelength photosensitive layer.
Long-wavelength photosensitivity using starting materials for introducing elementary atoms
used with starting materials for layer formation to form
It may be contained in the layer while controlling its amount. Forming a long wavelength photosensitive layer by glow discharge method
As a starting material for introducing nitrogen atoms,
A gaseous substance whose constituent atoms are at least nitrogen atoms.
is most of the gasified substances that can be gasified.
can be used. For example, a material whose constituent atoms are silicon atoms (Si).
Raw material gas and raw material gas whose constituent atoms are nitrogen atoms (N)
and hydrogen atoms (H) or halogen atoms as necessary.
Desired mixing ratio of raw material gas containing atoms (X)
or halogen atoms.
Raw material gas containing (Si) as a constituent atom and nitrogen atom (N)
and a raw material gas containing hydrogen atoms (H) as constituent atoms,
This can also be mixed at the desired mixing ratio or
Raw material gas containing Si atoms (Si) and Si
of silicon atoms (Si), nitrogen atoms (N) and hydrogen atoms (H)
Used by mixing with a raw material gas containing three constituent atoms.
I can do it. Also, separately, silicon atoms (Si) and hydrogen atoms (H)
Nitrogen atoms (N) are added to the raw material gas whose constituent atoms are
It is also possible to use a mixture of raw material gases for forming atoms.
stomach. What can be used as a raw material gas for introducing nitrogen atoms (N)
The starting materials that can be effectively used include the constituent atoms of N.
Or, for example, nitrogen containing N and H as constituent atoms.
element (N₂), ammonia (NH₃), hydrazine
(H₂NNH₂), hydrogen azide (HN₃), ammo azide
Nium (NH_FourN₃), etc., which are gaseous or capable of being gasified.
Nitrogen compounds such as nitrogen, nitrides and azides are listed.
You can do it. In addition to the introduction of nitrogen atoms (N),
Furthermore, is it possible to introduce halogen atoms (X)?
et al., nitrogen trifluoride (F₃N), nitrogen tetrafluoride (F_FourN₂)etc
Examples include halogenated nitrogen compounds. In the present invention, nitrogen is contained in the long wavelength photosensitive layer.
It can contain atoms and/or oxygen atoms.
Oxygen source for introducing oxygen atoms into the long wavelength photosensitive layer
For example, oxygen can be used as a raw material gas for introducing oxygen.
(O₂), ozone (O₃), nitric oxide (NO), dioxide
Nitrogen (NO₂), nitrogen monoxide (N₂O), sesquioxide
Nitrogen (N₂O₃), nitrogen tetroxide (N₂O_Four), pentoxide
Nitrogen (N₂O_Five), nitrogen trioxide (NO₃), silicon raw material
Constituent atoms include Si (Si), oxygen atom (O), and hydrogen atom (H)
For example, disiloxane (H₃SiOSiH₃),
Trisiloxane (H₃SiOSiH₂OSiH₃) etc.
Examples include siloxane. Forming a long wavelength photosensitive layer by sputtering method
In order to form a long wavelength photosensitive layer, single crystal or
is polycrystalline Si wafer or Si₃N_Fourwafer,
Or Si and Si₃N_Fourwafer containing a mixture of
- These are used as targets for various gases.
If done by sputtering in the atmosphere
good. For example, using a Si wafer as a target
If so, the nitrogen atom and optionally the hydrogen atom or/
and raw material gas for introducing halogen atoms.
Dilute with diluting gas as necessary to prepare a sputtering deposit.
The gas plasma of these gases is introduced into the storage chamber.
Form and sputter the Si wafer.
Good. Also, separately, Si and Si₃N_Fourtarget different from
as or Si and Si₃N_FourA single target mixed with
By using the gas for spatsuta,
in an atmosphere of diluent gas or at least hydrogen.
Atom (H) or/and halogen atom (X) as constituent atoms
sputtering in a gas atmosphere containing
done by. As the raw material gas for introducing oxygen atoms, the above-mentioned
Nitrogen atoms in source gas shown in glow discharge example
Even if the raw material gas for introduction is sputtering,
Can be used as an effective gas. In the present invention, when forming a long wavelength photosensitive layer,
Then, the distribution concentration C(N) of nitrogen atoms contained in the layer is
Change the distribution in the layer thickness direction to obtain the desired distribution shape in the layer thickness direction.
To form a layer with a depth profile,
In the case of glow discharge, changing the distribution concentration C(N)
The starting material gas for introducing nitrogen atoms into the gas
Change the gas flow rate accordingly according to the desired rate of change curve.
However, this can be achieved by introducing it into the deposition chamber.
Ru. Normal use, e.g. manually or with an external drive motor
The route of the gas flow system is
Adjust the opening of the specified needle valve inside the
All you have to do is change it as needed. When formed by sputtering method, nitrogen
Change the distribution concentration C(N) of atoms in the layer thickness direction
to obtain the desired distribution state of nitrogen atoms in the layer thickness direction.
In order to form a (depth profile), the first step is to
For nitrogen atom introduction, as with the low discharge method.
starting material is used in gaseous state and the gas is introduced into the deposition chamber.
The gas flow rate when introduced into the interior can be changed as desired.
It is achieved by making it . Second, the target for sputtering, e.g.
For example, Si and Si₃N_Fourusing a mixed target with
If so, Si and Si₃N_FourThe mixing ratio with
In the direction of the layer thickness of the get, change is made in advance.
It is achieved by keeping it. Nitrogen atoms (N) contained in the long wavelength photosensitive layer
amount, or amount of oxygen atoms (O), or nitrogen atoms and oxygen atoms
The sum of the amounts (N+O) is more preferably 0.01 to 40
atomic %, more preferably 0.05 to 30 atomic %, optimally
is preferably 0.1 to 25 at%. A substance that controls conduction properties in the long wavelength photosensitive layer
properties, e.g. group atoms or structure of group atoms
In order to introduce
Commercially available starting materials or starting materials for the introduction of group atoms
A long-wavelength photosensitive layer is formed in the deposition chamber in a gaseous state.
It can be introduced along with other starting materials for
stomach. Such starting materials and compounds for the introduction of group atoms
Possible materials are gaseous at room temperature and pressure, or
which can be easily gasified at least under layer-forming conditions.
It is desirable that the above be adopted. Such a genus original
Specifically, boron atoms are used as starting materials for the introduction of boron atoms.
For use, B₂H₆,B_FourH_Ten,B_FiveH₉,B_FiveH_Ten，
B₆H_Ten,B₆H₁₂,B₆H₁₄Boron hydride, BF etc.₃，
BCl₂,BBr₃Examples include boron halides such as.
In addition, AlCl₃,GaCl₃, Ga(CH₃)₃,InCl₂，
TlCl₃etc. can also be mentioned. As a starting material for the introduction of group atoms,
It is effectively used for introducing phosphorus atoms.
Well, PH₃,P₂H_FourHydrogenated phosphorus, PH etc._FourI, P.F.₃，
P.F._Five, PCl₃, PCl_Five, PBr₃, PBr_Five, P.I.₃etc. halogen
Examples include phosphorus chloride. In addition, AsH₃,AsF₃，
AsCl₃, AsBr₃,AsF_Five,SbH₃,SbF₃,SbF_Five，
SbCl₃,SbCl_Five, BiH₃, BiCl₃, BiBr₃etc. also group
Listed as effective starting materials for atom introduction
I can do things. In the present invention, the layer thickness of the long wavelength photosensitive layer is preferably
preferably 30 Å to 50 μm, more preferably 40 Å to
40μm, optimally 50Å to 30μm.
stomach. Charge injection blocking layer The charge injection blocking layer 103 in the present invention is A-
Composed of Si (H, X), the entire layer area of the layer 103
uniformly or preferably
Contains in a non-uniform manner so that it is mostly distributed on the support side
do. Furthermore, if necessary, the entire layer area of the layer 103
or oxygen atoms and/or nitrogen atoms in some layer regions
is distributed uniformly or preferably in large amounts on the support side.
By containing it in a non-uniform state so that the layer 1
03 and the long wavelength photosensitive layer 102.
It is possible to adjust the hand gap. The above-mentioned conductive material contained in the charge injection blocking layer 103
In the semiconductor field, substances that control
So-called impurities can be mentioned, and in the present invention,
belongs to group of the periodic table which gives p-type conductivity characteristics.
(hereinafter referred to as "Group atoms"), or N
Atoms belonging to a group of the periodic table that give type conductivity properties
(hereinafter referred to as "group atoms"). tribe
Specifically, atoms include B (boron) and Al (aluminum).
), Ga (gallium), In (indium), Tl
(thallium), etc., with B and Ga being particularly suitable.
Ru. Specifically, the group atoms include P (phosphorus),
As (arsenic), Sb (antimony), Bi (bismuth), etc.
Among them, P and As are particularly suitable. In FIGS. 8 to 12, a charge injection blocking layer 103 is shown.
Group atoms contained in or layer thickness of group atoms
A typical example of the distribution state of the direction is shown. Figure 8~
In the example of Figure 12, the horizontal axis is the group atom or
The vertical axis represents the distribution concentration C of group atoms, and the vertical axis represents the charge injection blocking layer 1.
Indicates the layer thickness t of 03, t_Bis the interface on the support side 101
position, t_Tis the interface on the opposite side to the support side 101
Show location. That is, the charge injection blocking layer 103 has t_B~ side
Moret_TLayering takes place towards the sides. FIG. 8 shows that the charge injection blocking layer 103 contains
Group atoms or distribution of group atoms in the layer thickness direction
The first typical example of the situation is shown below. In the example shown in Figure 8, the interface position t_Bthan t_Fourof
Up to the position, the group atom or the concentration of group atom
Degree C is C₁₂It is contained while taking a certain value, and the position
Placement_FourTherefore, the distribution concentration C is the interface position t_TC up to₁₃Yo
has been gradually and continuously reduced. Interface position t_Tto
In this case, the distribution concentration C is C₁₄It is said that In the example shown in FIG.
The distribution concentration C of group atoms or group atoms is at position t_BYo
position t_TC up to₁₅gradually and continuously decreasing from
and position t_TC in₁₆Shape the distribution state such that
has been completed. In the example shown in Figure 10, the group atoms or
The distribution concentration C of group atoms is given by the position t_Band position t_FiveBetween
In this case, C₁₇is a constant value, and the position t_TIn
is C₁₈It is said that position t_Fiveand position t_TThe distribution is between
The concentration C is linearly proportional to the position t_FiveMore position_Tuntil
has been reduced. In the example shown in FIG. 11, the distribution concentration C is
position t_BMore position₆Until C₁₉Take a constant value of
t₆More position_TUntil C₂₀More C_{twenty one}linearly up to
The distribution state is said to be decreasing. In the example shown in FIG. 12, the distribution concentration C
is position t_BMore position_Tup to C_{twenty two}takes a constant value. In the present invention, the charge injection blocking layer contains group atoms or
is due to the large distribution of group atoms on the support side.
When contained in a cloth state, group atoms or group elements
The maximum value of the distribution concentration value of the child is preferably 50 atomic ppm
or more, more preferably 80 atomic ppm or more, optimally
The distribution state can be such that it is more than 100 atomic ppm.
It is desirable that the layers be formed in such a manner that the In the present invention, it is contained in the charge injection blocking layer.
The content of group atoms or group atoms is
Follow the wishes so that the purpose of the invention is effectively achieved
It can be determined as appropriate, but preferably 30 to 5 x 10^Fouratom
ppm, more preferably 50-1×10^FourAtomic ppm, maximum
Suitably 1×10²~5×10³It is hoped that it will be expressed as atomic ppm.
It's a beautiful thing. The charge injection blocking layer 103 is made of oxygen source as described above.
Emphatically due to the inclusion of nitrogen atoms or/and nitrogen atoms
Long wavelength photosensitive layer 102 and charge injection blocking layer 103
Improved adhesion between the charge injection blocking layer 103 and
Improving the adhesion between the photoconductive layer 104 or the layer
The handgap 103 is adjusted. In FIGS. 13 to 19, a charge injection blocking layer 10 is shown.
A layer of oxygen atoms and/or nitrogen atoms contained in 3.
A typical example of the distribution state in the thickness direction is shown. 13th
In the examples shown in Figures to Figure 19, the horizontal axis represents the oxygen atom or
is/and the distribution concentration C of nitrogen atoms, and the vertical axis is the charge Note
Indicates the layer thickness t of the entry blocking layer 103, t_Bis support side 1
The interface position of 01 is t_Tis opposite to the support side 101
Indicates the position of the side interface. That is, charge injection blocking layer 1
03 is t_BT from the side_TLayering takes place towards the sides. FIG. 13 shows the charge injection blocking layer 103 containing
The amount of oxygen atoms and/or nitrogen atoms in the layer thickness direction
A first typical example of the cloth state is shown. In the example shown in Fig. 13, the interface position t_BMoret₇of
Containing oxygen atoms and/or nitrogen atoms up to the position
concentration C is C_{twenty three}Although it takes a certain value,
Placement₇Therefore, the distribution concentration C is the interface position t_TC up to_{twenty four}Yo
has been gradually and continuously reduced. Interface position t_Tto
In this case, the distribution concentration C is C_{twenty five}It is said that In the example shown in FIG. 14, it contains
The distribution concentration C of oxygen atoms and/or nitrogen atoms is the position
t_BMore position_TC up to₂₆gradually and continuously decreases from
a little position t_TC in₂₇The distribution state becomes
is forming. In the case of Figure 15, position t_BMore position₈Until
The distribution concentration C of oxygen atoms and/or nitrogen atoms is C₂₈
is assumed to be a constant value, and the position t₈and position t_Tbetween
is gradually and continuously decreased, and the position t_TIn the
It is essentially zero. In the case of Figure 16, oxygen atoms or/and nitrogen
Atom is at position t_BMore position_Tuntil the distribution concentration C
is C₃₀The position t is gradually decreased more continuously_TAt
It is said that it is essentially zero. In the example shown in FIG. 17, oxygen atoms or
and the distribution concentration C of nitrogen atoms is at the position t_BMore position₉Ma
Then C₃₁Take a constant value of and position t₇More position_TUntil
C₃₁More C₃₂The distribution state decreases linearly until
has been done. In the example shown in FIG.
and the distribution concentration C of nitrogen atoms is at the position t_Band position t_Tenwhile
In C₃₃is a constant value, and the position t_Tin
C₃₅It is said that position t_Tenand position t_TBetween
The distribution concentration C is linearly distributed at the position t_TenMore position_Tto
has been reduced until In the example shown in FIG. 19, the distribution concentration C
is position t_BMore position_TUntil C₃₆takes a constant value. In the present invention, the charge injection blocking layer 103 is an oxygen source.
and/or nitrogen atoms on the support 101 side.
When contained in a large distribution state, oxygen atoms
or/and distribution concentration value of nitrogen atoms or the sum of both atoms
The maximum value of is preferably 500 atomic ppm or more, or more
Preferably 800 atomic ppm or more, optimally 1000 atomic ppm
layer to achieve a distribution state of ppm or more.
preferably formed. In the present invention, the charge injection blocking layer 103 contains
content of oxygen atoms and/or nitrogen atoms or
As a sum of both, the purpose of the present invention is effectively achieved.
It can be determined appropriately according to the desired result, but the preferred
preferably 0.001 to 50 atom%, more preferably 0.002 to 50 atom%
It is said to be 40 atom%, optimally 0.003 to 30 atom%.
is desirable. In the present invention, the layer thickness of the charge injection blocking layer 103 is
Obtaining desired electrophotographic properties and economic efficiency
From the viewpoint of fruit etc., preferably 0.01 to 10μ, more preferably
The ideal value is 0.05 to 8μ, and the optimal value is 0.1 to 5μ.
desirable. photoconductive layer The photoconductive layer 104 in the present invention is A-Si(H,
X) and satisfies the desired electrophotographic characteristics.
Has conductive properties. Note that the conductivity is controlled in the entire layer area of the layer 104.
The material does not impair the properties required for the layer 104.
It may be contained within a certain range. Further, the entire layer area of the layer 104 is
carbon atoms within the range that does not impair the properties of
Contains at least one of an oxygen atom and a nitrogen atom
It's okay. As the substance that controls the conductivity, the above-mentioned electrical
Similarly to the charge injection blocking layer 103, group atoms and group atoms
Group atoms can be used. In the present invention, the entire layer area of the photoconductive layer 104 is
If it contains a group atom or a group atom,
It has the effect of controlling the conductivity type and/or conductivity.
However, the content of the group atoms or group atoms is
A relatively small amount, preferably 1×10^-3~3×10²original
ppm, more preferably 5×10^-3~Ten²atomic ppm,
Optimally 1×10^-2Desired to be ~50 atomic ppm
Yes. In addition, the entire layer area of the photoconductive layer 104 in the present invention
If it contains an oxygen atom or a nitrogen atom,
to achieve high dark resistance, charge injection blocking layer and photoconductive layer.
This has the effect of improving the adhesion between the
In order not to deteriorate the photoconductive properties of the layer 104, an oxygen source is used.
It is desirable that the content of children is relatively small. In the case of nitrogen atoms, in addition to the above points, e.g.
Increased photosensitivity in coexistence with group atoms, especially B.
You can measure the top. In the present invention, the purpose is effectively achieved.
For this purpose, a light-receiving layer 100 is formed on a support 101.
The photoconductive layer 104 constituting a part of the
Has conductive properties and is photoconductive to irradiated light
It is composed of A-Si(H,X). p-type A-Si (H,X)...acceptor only
including. Or between donor and acceptor
Contains both and has a high relative concentration of acceptor
thing. In the type of p-type A-Si(H,X)...
If the acceptor concentration (Na) is low or
has a low relative concentration of acceptor. n-type A-Si(H,X)...contains only donor
thing. or include both donor and acceptor.
and those with a high relative concentration of donor. In the type of n-type A-Si(H,X)...
If the donor concentration (Nd) is low or the donor
The relative concentration of - is low. i-type A-Si(H,X)……NaNdO also
or NaNd. In the present invention, the charge injection blocking layer 103 or/
and halogen atoms contained in the photoconductive layer 104
Preferred as (X) are F, Cl, Br, I,
Particularly desirable are F and Cl. In the present invention, it is composed of A-Si(H,X).
charge injection blocking layer 103 or/and photoconductive layer 10
For example, glow discharge method, microphone
radio wave discharge method, sputtering method, or ion beam
Vacuum deposition using discharge phenomena such as rating method
It is done by law. For example, the glow discharge method
Therefore, an amorphous layer composed of A-Si(H,X) is
Basically, silicon atoms (Si) are
Along with the raw material gas for Si supply that can be supplied, hydrogen atoms
(H) for introduction or/and source for introduction of halogen atom (X)
The feed gas is introduced into a deposition chamber where the internal pressure can be reduced.
A glow discharge is generated in the deposition chamber, and a predetermined
A- on a given support surface in place
A layer made of Si(H,X) may be formed. or,
For example, when forming by sputtering method,
Inert gas such as Ar, He, or other gas based
A tar made of Si in a clean mixed gas atmosphere
When sputtering a get, hydrogen atoms (H) or
Sputter gas for introducing halogen atoms (X).
It can be introduced into a deposition chamber for rings. Raw material gas for supplying Si used in the present invention
As, SiH_Four,Si₂H₆,Si₃H₈,Si_FourH_Tenmoths such as
Silicon hydride (silane) in a gaseous state or gasifiable
) are mentioned as those that can be effectively used, and
In addition, it is easy to handle the layer creation work, and has good Si supply efficiency.
SiH in terms of_Four,Si₂H₆are listed as preferable.
It can be done. For introducing halogen atoms used in the present invention
Many halogenated gases are effective as raw material gases for
For example, halogen gas, halogen
compounds, interhalogens, halogen-substituted
Gaseous or gasifiable materials such as silane derivatives
Preferred examples include rogene compounds. Furthermore, silicon atoms and halogen atoms
Constituent halves in a gaseous state or capable of being gasified
Silicon compounds containing rogen atoms are also considered effective.
In the present invention, the following can be mentioned. Halogen compounds that can be suitably used in the present invention
Specifically, the substances include fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF₃,
BrF_Five,BrF₃,IF₃,IF₇, ICl, IBr, etc.
Intermediate compounds can be mentioned. Silicon compounds containing halogen atoms, so-called halogens
Examples of silane derivatives substituted with carbon atoms include
For example, SiF_Four,Si₂F₆,SiCl_Four, SiBr_Fouretc.
Silicon halogenide can be cited as a preferred option.
come. Adopts silicon compounds containing such halogen atoms
The characteristic light guide of the present invention is produced by the glow discharge method.
When forming electrical parts, raw materials that can supply Si
Even without using silicon hydride gas as a gas,
Halogen atoms as constituents on a given support
It is possible to form a layer consisting of A-Si:H containing
Ru. A layer containing halogen atoms according to the glow discharge method
When producing Si, basically the raw material gas for supplying Si is
Silicon halide gas and Ar, H₂, He et al.
Place the gas at the specified mixing ratio and gas flow rate.
into the deposition chamber to form the desired layer and generate a glow discharge.
These gases form a plasma atmosphere.
Form a desired layer on a given support by
However, in order to introduce hydrogen atoms,
Silicon compounds containing hydrogen atoms in these gases
A layer may be formed by mixing a predetermined amount of gas. In addition, each gas can be used not only as a single species but also in a predetermined mixing ratio.
It is safe to use a mixture of multiple types.
Ru. Reactive sputtering method or ion platey
A layer consisting of A-Si(H,X) is formed using the
For example, in the case of sputtering method,
Using a target consisting of Si, this is
Sputtering in a gas plasma atmosphere to generate iodine
In the case of the plating method, polycrystalline silicon
Or use monocrystalline silicon as an evaporation source in a deposition boat.
This silicon evaporation source is heated using resistance heating method or
is added by electron beam method (EB method) etc.
Thermal evaporation and flying evaporates are placed in a specified gas plasma atmosphere.
This can be done by passing air through it. At this time, sputtering method, ion plate
In both cases, halogen is present in the layer formed.
In order to introduce a ion atom, the above-mentioned halogen compound or
is the silicon compound gas containing the above halogen atom.
The gas is introduced into the deposition chamber to form a plasma atmosphere.
It is good if you can do it. In addition, when introducing hydrogen atoms, hydrogen atom guide
Necessary raw material gas, e.g. H₂, or the above
In a deposition chamber for sputtering gases such as silanes.
to form a plasma atmosphere of the gas.
That's fine. In the present invention, the raw material for introducing halogen atoms
The halogen compounds or halogens listed above as gases
Silicon compounds containing gen are used as effective ones.
In addition, HF, HCl,
Hydrogen halides such as HBr, HI, SiH₂F₂，
SiH₂I₂,SiH₂Cl₂,SiHCl₃,SiH₂Br₂,SiHBr₃etc
halogen-substituted silicon hydride, etc.
Hydrogen atoms are one of the constituent elements, and can be gasified.
Halides are also effective charge injection blocking layers and light
It can be cited as a starting material for forming a conductive layer.
Ru. These halides containing hydrogen atoms are layered.
The introduction of halogen atoms into the layer formed during
At the same time, it is extremely useful for controlling electrical or photoelectric characteristics.
Since effective hydrogen atoms are also introduced, in the present invention,
is used as a suitable raw material for introducing halogen atoms.
It can be done. Hydrogen atoms are introduced structurally into the formed layer.
In addition to the above,₂, or SiH_Four,Si₂H₆，
Si₃H₈,Si_FourH_TenSupplying silicon hydride gas such as
coexist with a silicon compound in the deposition chamber to
This can also be done by causing electrical discharge. For example, in the case of the reactive sputtering method, Si
Gas for introducing halogen atoms using a target
and H₂If necessary, use an inert gas such as He or Ar.
A plasma atmosphere is created by introducing the
forming and sputtering the Si target.
In some cases, the substrate consists of A-Si(H,X).
A layer is formed. Furthermore, B also serves as a doping agent for impurities.₂H₆etc.
It is also possible to introduce gas. In the present invention, the electrophotographic light receptor formed
Contained in the charge injection blocking layer and photoconductive layer of the member.
amount of hydrogen atoms (H) or amount of halogen atoms (X) or water
The sum of the amounts of elementary atoms and halogen atoms is preferably 1 to
40 atom%, more preferably 5 to 30 atom%
is desirable. Hydrogen atoms (H) or/
and to control the amount of halogen atoms (X), e.g.
Support temperature or/and hydrogen atom (H) or halogen
of the starting material used to contain the ion atom (X).
Controls the amount introduced into the deposition system, discharge power, etc.
Just do it. Group group atoms or
Group atoms, and carbon, oxygen, or nitrogen atoms
To incorporate atoms, glow discharge method or reaction spa
Charge injection blocking layer or photoconductive layer using vine ring method etc.
for the introduction of group atoms or group atoms in the formation of
Starting material for and introduction of oxygen atom, nitrogen atom introduction
The starting materials for carbon atom introduction and carbon atom introduction were
Along with starting materials for forming charge injection blocking layers and photoconductive layers.
while controlling its amount in the layer formed using
It is achieved by containing. For such carbon atom introduction, oxygen atom introduction
or/and starting material for nitrogen atom introduction, or
As a starting material for introducing group atoms or group atoms
is at least a carbon atom, an oxygen atom and a nitrogen atom
or a group atom or a group atom
Gaseous substances or substances that can be gasified as constituent atoms
Most of the gasified substances are used.
obtain. For example, if you want to contain oxygen atoms, silicon
A raw material gas whose constituent atoms are silicon atoms (Si) and oxygen
Raw material gas containing atoms (O) and as necessary
The constituent atoms of hydrogen atom (H) or halogen atom (X)
Used by mixing with the raw material gas at the desired mixing ratio.
Or, silicon atoms (Si) are used as constituent atoms.
A raw material gas consisting of oxygen atoms (O) and hydrogen atoms (H)
This is also a desired mixture of the raw material gas and the constituent atoms.
or by mixing silicon atoms (Si)
Raw material gas and silicon atoms (Si) as constituent atoms,
The three constituent atoms are oxygen atom (O) and hydrogen atom (H).
It can be used in combination with raw material gas. Also, separately, silicon atoms (Si) and hydrogen atoms (H)
Oxygen atoms (O) are formed in the raw material gas whose constituent atoms are
A mixture of raw material gases containing atoms may be used. Starting materials for introducing oxygen atoms and for introducing nitrogen atoms
Specifically, for example, oxygen
(O₂), ozone (O₃), nitric oxide (NO), dioxide
Nitrogen (NO₂), nitrogen monoxide (N₂O), sesquioxide
Nitrogen (N₂O₃), nitrogen tetroxide (N₂O_Four), pentoxide
Nitrogen (N₂O_Five), nitrogen trioxide (NO₃), nitrogen (N₂),
Ammonia (NH₃), hydrogen azide (HN₃), Hido
Radin (NH₂N.H.₂), silicon atoms (Si) and oxygen
An example where the constituent atoms are an atom (O) and a hydrogen atom (H)
For example, disiloxane (H₃SiOSiH₃), trisiloxa
(H₃SiOSiH₂OSiH₃) and other lower siloxanes, etc.
can be mentioned. Carbon atom-containing compounds that serve as raw materials for introducing carbon atoms
For example, saturated hydrocarbons having 1 to 4 carbon atoms
Ethylene hydrocarbon with 2 to 4 carbon atoms, carbon number
Examples include 2 to 3 acetylene hydrocarbons. Specifically, methane is a saturated hydrocarbon.
(CH_Four), ethane (C₂H₆), propane (C₃H₈), n
-butane (n-C_FourH_Ten), pentane (C_FiveH₁₂),workman
Ethylene (C₂H_Four),
Propylene (C₃H₆), butene-1 (C_FourH₈), Butte
N-2 (C_FourH₈), isobutylene (C_FourH₈), pente
(C_FiveH_Ten), as acetylenic hydrocarbons,
Acetylene (C₂H₂), methylacetylene
(C₃H_Four), butin (C_FourH₆) etc. As a raw material gas containing Si, C, and H as constituent atoms
is Si(CH₃)_Four,Si(C₂H_Four)_FourAlkyl silicide such as
I can list many. Group atoms or charges contained in group atomsNote
Glow discharge is used to form the entry blocking layer and photoconductive layer.
When using this method, the raw material gas for forming the layer is
The emitting substance is composed of the above-mentioned A-Si(H,X).
Starting materials for forming charge injection blocking layer and photoconductive layer
A group atom or a group atom selected from among
A starting material for introducing group atoms is added.
Ru. Such a group atom or for the introduction of a group atom.
The starting material is a group atom or a group atom.
Gaseous substances or substances that can be gasified as constituent atoms
Any gasified substance can be used.
It's good to wear. In the present invention, the starting material for introducing group atoms
Specifically, what can be effectively used as
B for introducing boron atoms₂H₆,B_FourH_Ten,B_FiveH₉，
B_FiveH₁₁,B₆H_Ten,B₆H₁₂,B₆H₁₄Boron hydride, such as
BF₃, BCl₃,BBr₃Boron halides such as
In addition, AlCl₃,GaCl₃，
InCl₃, TlCl₃etc. can also be mentioned. In the present invention, the starting material for introducing group atoms
Specifically, phosphorus atom conductors are effectively used as
For use, PH₃,P₂H_FourPhosphorus hydride, etc.
PH_FourI, P.F.₃,PF_Five, PCl₃, PCl_Five, PBr₃, PBr_Five，
P.I.₃Examples include halogenated phosphorus such as. In addition,
AsH₃,AsF₃,AsCl₃, AsBr₃,AsF_Five,SbH₃，
SbF₃,SbF_Five,SbCl₃,SbCl_Five, BiH₃, BiCl₃，
BiBr₃etc. can also be mentioned. Charge injection containing group atoms or group atoms
Group atoms or group atoms introduced in the blocking layer and the photoconductive layer
The content of group atoms is determined by the initial
Group atoms or gas streams of starting materials for the introduction of group atoms
amount, gas flow rate ratio, discharge power, support temperature, deposition
It can be controlled arbitrarily by controlling the indoor pressure, etc.
It can be done. In order to effectively achieve the purpose of the present invention,
The support temperature should be selected within the optimum range, but it should not be
50℃~350℃, preferably 100℃~300℃
is desirable. Charge injection blocking layer and photoconductive layer in the present invention
Formation involves delicate control of the composition ratio of the atoms that make up the layer.
control and layer thickness is easier than other methods
Therefore, the glow discharge method and sputtering method were adopted.
is desirable, but these layer formation methods can prevent charge injection.
When forming a layer and a photoconductive layer, the support as described above is used.
Similar to body temperature, discharge power during layer formation, gas
Characteristics of the charge injection blocking layer and photoconductive layer where the pressure is created
It is an important factor that influences gender. A charge injection having characteristics capable of achieving the object of the present invention
Entry blocking layer and photoconductive layer can be manufactured efficiently and efficiently.
Regarding the discharge power conditions when creating
is usually 10 to 1000W, preferably 20 to 500W.
It is desirable that the gas pressure in the deposition chamber be
is usually about 0.01 to 1 Torr, preferably about 0.1 to 0.5 Torr.
It is desirable to set it as a degree. In the present invention, a charge injection blocking layer and a photoconductive
Desired support temperature and discharge power to create the layer
The ranges mentioned above are examples of new numerical ranges.
However, these layer formation factors are usually independent
the desired characteristics, rather than those that can be determined separately.
To form a charge injection blocking layer and a photoconductive layer with
Each layer is constructed based on mutual and organic relationships.
It is desirable to determine the optimal value of the growth factor. In the present invention, contained in the photoconductive layer formed
The amount of carbon, oxygen or nitrogen that is
What greatly influences the characteristics of light-receiving materials for child photography
and must be determined appropriately according to the desired
However, the content of the sum of the three above is preferably 0.0005
~30 atom%, more preferably 0.001-20 atom%, best
The content is desirably 0.002 to 15 at%. The layer thickness of the photoconductive layer 104 is determined to have desired spectral characteristics.
Photodetection caused by irradiation with light that has a characteristic
Adapted according to your wishes so that Yaria can be transported efficiently.
Determined as required, usually 1 to 100μ, preferably 2 to 50μ
It is desirable that this is done. surface layer Surface layer 105 formed on photoconductive layer 104
has a free surface 106 and is mainly moisture resistant and continuously repeatable.
Reversal usage characteristics, electrical pressure resistance usage environment characteristics, durability
In order to achieve the purpose of the present invention,
Ru. In the light receiving member of the present invention, the surface layer 1
At the interface between 05 and the photoconductive layer 104, a large amount of light
whether the chemical band gap is aligned or the surface layer 10
5 and the photoconductive layer 104.
at least to the extent that it substantially prevents
It is extremely important to configure the
At the same time, this is in correlation with the hydrogen content.
It is also important to create extremely unique favorable conditions.
This is an important point. Furthermore, in the present invention,
A region close to the surface of the surface layer 105, at least the outermost surface
Setting the amount of hydrogen contained on the surface to a predetermined concentration
is necessary. After satisfying the above conditions, the surface
The distribution of components within layer 105 is subject to strict conditions.
It needs to be decided under control. Furthermore, in addition to the above-mentioned conditions, the surface layer 105 is
At the end on the side of the outer surface, a
Amount of incident light reaching the photoconductive layer 104
In order to ensure sufficient
At the end of the free surface, the light possessed by the surface layer
Make the scientific band gap Eopt sufficiently large.
Another point to consider is that the system is structured as follows. and,
At the interface between the surface layer 105 and the photoconductive layer 104
Constructed to match optical bandgap Eopt
At the same time, at the free surface side end of the surface layer
to make the optical bandgap Eopt sufficiently large.
When the surface layer is configured to have a
The dog gap is continuous in the thickness direction of the surface layer.
is configured to include at least a region that changes to
Ru. Optical bandgap Eopt layer thickness of surface layer
To control the value in the direction as described above, the representative
In other words, it is the main tuning atom of the optical bandgap.
The amount of carbon atoms (C) contained in the surface layer of
This can be done by controlling the In addition, the surface layer changes depending on the change in band gap.
The function of matching other characteristics of
Hydrogen, which has a certain amount of energy, seems to have a specific distribution state.
Control the content. Below, the carbon and hydrogen atoms in the surface layer are
Some typical examples of distribution states are shown in Figures 25 to 25.
As will be explained with reference to FIG. 28, the present invention
The examples are not limited. In Figures 25 to 28, the horizontal axis is the atom
Distribution concentration C of (C, Si) and atoms (H), vertical axis is surface
The layer thickness t of the layer is shown, and in the figure, t_Tis the photosensitive layer and the surface
Interface position with surface layer, t_Fis the free surface position, the solid line is the charcoal
Changes in the distribution concentration of elementary atoms (C), the chain double-dashed line is silicon
Changes in the distribution concentration of atoms (Si), and the dashed line indicates hydrogen
Each figure shows changes in the distribution concentration of atoms (H). Figure 25 shows carbon atoms contained in the surface layer.
(C) and the layer thickness of silicon atoms (Si) and hydrogen atoms (H)
The first typical example of the distribution state of the direction is shown. Example
Then, the interface position t_TMore position₁₁Up to, the carbon atom (C)
Distribution concentration C is less than zero concentration C₃₇Primary Seki until
While the distribution concentration of silicon atoms increases numerically
is the concentration C₃₈From concentration C₃₉linearly until
decrease, and the distribution concentration of hydrogen atoms is C₄₀from C₄₁Tona
increases linearly until the position t₁₁from position t_Fto
Until then, carbon atoms (C) and silicon atoms and
The distribution concentration C of hydrogen atoms is each concentration C₃₇and concentration C₃₉
and concentration C₄₁In this case, we will keep a constant value of
For convenience, the inflection point of the distribution state of each component is t₁₁and
However, even if they are shifted from each other, there is virtually no problem. In the example shown in FIG. 26, the position t_Tfrom position t_Fin,
Carbon atom (C) decreases from zero to concentration C₄₂Until then, silicon
Atom (Si) is C₄₃from C₄₄up to, and the hydrogen atom (H) is
C₄₅from C₄₆up to
ing. In this example, the formation occurs over the entire surface layer.
Since the components change, the adverse effects caused by discontinuity of the components can be avoided.
Further improvement is possible. Also, for example, as shown in Figs. 27 to 28, the components may be changed.
A pattern in which the conversion rate changes from moment to moment and Figure 25
It is also possible to combine the typical examples described in FIG.
Depending on the desired film properties or manufacturing equipment conditions, etc.
It can be selected as desired. Furthermore, the band gear at the interface
As mentioned above, the consistency of the pool is practically sufficient.
In that sense, it would be better if_TThe amount of carbon in
It is not limited to , it may have a certain finite value, or it may have a distribution
Changes in components may stagnate for a certain period in a region.
From this point of view, it is acceptable. Formation of surface layer is glow
Discharge method, microwave discharge method, sputtering method,
Ion implantation method, ion plate
This is done by the ing method, electron beam method, etc.
It can be done. These manufacturing methods depend on manufacturing conditions and capital investment.
Lower load level, production scale, and electrophotography to be produced
Depending on factors such as the desired characteristics of the light-receiving member,
It is selected and adopted as appropriate, but it has the desired characteristics.
Conditions for manufacturing light-receiving members for electrophotography
is relatively easy to control. with silicon atoms
In the surface layer 105 where carbon atoms and hydrogen atoms are created
Glow release is easy to install and can be easily carried out.
The electric method or the sputtering method is preferably employed. Furthermore, in the present invention, glow discharge method and spatula
surface layer 1 by combining the taring method in the same equipment system.
05 may be formed. Forming surface layer 105 by glow discharge method
is A-(Si_xC_1-X)_y:H_1-yRaw material gas for formation
If necessary, mix with diluent gas at the specified mixing ratio.
At the same time, the support 101 is installed for vacuum deposition.
is introduced into the deposition chamber, and the introduced gas is glow discharged.
The support is converted into gas plasma by generating
On the photoconductive layer 104 already formed on 101
niA-(Si_xC_1-x)_y:H_1-yAll you have to do is deposit it. minutes
The formation of the cloth region is caused by the presence of changing components, e.g. carbon sources.
Silicon atom-containing gas, silicon atom-containing gas, and hydrogen source
Create the desired distribution pattern from the flow rate at the start of each child etc.
following a specific sequence set up to
If you increase or decrease it, it will be ready. In the present invention, A-(Si_XC_1-X)_y:H_1-yraw material for formation
As the source gas, at least one of Si, C, and H is used.
A gaseous substance or gasifying substance whose constituent atoms are
Most of the gasified substances used are
can be done. Si is one of the constituent atoms among Si, C, and H.
For example, when using raw material gas containing Si as a component gas,
A raw material gas containing C as a constituent atom and a raw material gas containing C as a constituent atom.
A desired mixture of gas and raw material gas containing H as a constituent atom is formed.
Use by mixing in a composite ratio, or use Si as a constituent atom.
A raw material gas containing C and H as its constituent atoms
and the feed gas at the desired mixing ratio.
Or, a raw material gas containing Si as a constituent atom and Si,
When mixed with a raw material gas containing three constituent atoms, C and H,
Can be used together. In addition, there is also a raw material gas whose constituent atoms are Si and H.
mixed with raw material gas containing C as a constituent atom.
You may do so. In addition, in the distribution area, the above mixture
All you have to do is change the rate according to a predetermined sequence.
stomach. In the present invention, the raw material gas for forming the surface layer 105 is
Si and H are effectively used as a
SiH as an atom_Four,Si₂H₆,Si₃H₃,Si_FourH_Tenetc.
Silicon hydride gas such as silane, C and H
For example, saturated carbon having 1 to 4 carbon atoms
Hydrocarbons, ethylene hydrocarbons with 2 to 4 carbon atoms, carbon
Examples include acetylene hydrocarbons with a prime number of 2 to 3.
Ru. Specifically, methane is a saturated hydrocarbon.
(CH_Four), ethane (C₂H₆), propane (C₃H₈), n
-butane (n-C_FourH_Ten), pentane (C_FiveH₁₂),workman
Ethylene (C₂H_Four),
Propylene (C₃H₆), butene-1 (C_FourH₈), Butte
N-2 (C_FourH₈), isobutylene (C_FourH₈), pente
(C_FiveH_Ten), as acetylenic hydrocarbons,
Acetylene (C₂H₂), methylacetylene
(C₃H_Four), butin (C_FourH₆) etc. As a raw material gas containing Si, C, and H as constituent atoms
is Si(CH₃)_Four,Si(C₂H_Five)_FourAlkyl silicide such as
I can list many. In addition to these raw material gases,
Of course, the raw material gas required is H.₂is also valid
used. Forming surface layer 105 by sputtering method
For this purpose, single crystal or polycrystalline Si wafer or
C wafer or contains a mixture of Si and C
Use these as the wafer and target.
By sputtering in various gas atmospheres.
Just go with it. For example, using a Si wafer as a target
Then, the raw material gas for introducing C and H is required.
Deposit for sputtering by diluting with diluent gas according to
These gases are introduced into the chamber to form a gas plasma.
If the above-mentioned Si wafer is sputtered with
good. The distribution region in this case contains e.g.
The raw material gas concentration is changed according to a certain sequence.
All you have to do is do it. Additionally, Si and C are separate targets.
or using a single target with a mixture of Si and C.
By using
By sputtering in a gas atmosphere
will be accomplished. In this case, the distribution area is
Use a gas that contains at least one of the two.
The gas concentrations are varied according to a fixed sequence.
It is necessary to As the raw material gas for introducing C or H, the above-mentioned
The raw material gas shown in the glow discharge example is
It can also be used as an effective gas in the case of In the present invention, the surface layer 105 is formed by a glow discharge method.
Or used when forming by sputtering method
As the diluting gas, so-called rare gases such as He,
Ne, Ar, etc. can be cited as suitable materials.
Ru. The surface layer 105 in the present invention
carefully shaped to give the desired properties
be done. In other words, substances whose constituent atoms are Si, C, and H are
The structure varies from crystal to amorph depending on the creation conditions.
It takes the form of up to a
Properties ranging from semiconducting to insulating, and photoconductive
properties ranging from photoconductive properties to non-photoconductive properties.
Therefore, in the present invention, the desired
A-Si with the characteristics of_xC_1-xso that it is formed,
The selection of the production conditions is made strictly according to the desired
Ru. For example, the main purpose of the surface layer 105 is to improve pressure resistance.
A-(Si_xC_1-x)_y:H_1-ymessenger
Amorphous material with remarkable electrically insulating behavior in a commercial environment
Created as a material. In addition, improvements in continuous repeated use characteristics and usage environment characteristics
When the surface layer 105 is provided mainly for the purpose of
In some cases, the degree of electrical insulation described above may be relaxed to some extent.
and has a certain degree of sensitivity to the light that is irradiated.
A-Si as an amorphous material_xC_1-xis created. A-(Si_xC_1-x)_yH_1-ymosquito
When forming the surface layer 105 consisting of
The body temperature influences the structure and properties of the layer formed.
This is an important factor that
(A-(Si_xC_1-x)_yH_1-yis where
The temperature of the support during layer formation can be controlled to ensure that the desired layer can be formed.
It is desirable that the In order to effectively achieve the purpose of the present invention,
The support temperature when forming the surface layer 105 is
The optimum range is selected according to the method of forming the surface layer 105.
is selected and the formation of the surface layer 105 is performed,
Preferably from 50°C to 350°C, more preferably from 100°C
A temperature of 300°C is desirable. surface layer
For the formation of 105, the composition ratio of atoms constituting the layer is
Fine control and layer thickness control compared to other methods
Glow discharge method and spa
Although it is advantageous to adopt the vine ring method,
When forming the surface layer 105 by the formation method, the above-mentioned
The discharge power during layer formation as well as the support temperature of
A-(Si) where gas pressure is created_xC_1-x)_y:H_1-ycharacteristics of
It is one of the important factors that influences Having the characteristics to achieve the purpose of the present invention
A-(Si_xC_1-x)_y:H_1-ybe productive and effective
The preferable discharge power conditions for creating
Usually 10-1000W, more preferably 20-500W.
It is desirable to The gas pressure in the deposition chamber is preferably
0.01~1Torr, more preferably around 0.1~0.5Torr
It is desirable that In the present invention, in order to create the surface layer 105,
Support temperature, desired numerical range of discharge power and
The values in the range mentioned above can be mentioned, but these
Layer creation factors can be determined independently and separately
A-Si with desired characteristics_xC_1-xconsists of
A mutual organic relationship is established such that a surface layer 105 is formed.
The optimal value of each layer formation factor is determined based on the
It is desirable to be accepted. Surface layer in the electrophotographic light-receiving member of the present invention
Amount of carbon atoms and hydrogen atoms contained in 105
Similar to the manufacturing conditions of the surface layer 105,
Surface layer 105 that provides the desired properties to achieve the target
is an important factor in the formation of Carbon contained in the surface layer 104 in the present invention
The amount of atoms is similar to that of silicon atoms in the distribution area.
Usually 0 to 90 atomic %, preferably 0 to 90 atomic % based on the total amount of carbon atoms.
Preferably 0 to 85 atom%, optimally 0 to 80 atom%.
It is desirable to vary within a range, and in a certain area.
Usually 1×10^-3~90 atom%, preferably 1
~90 atom%, optimally 10-80 atom%
It is desirable. As the content of hydrogen atoms
is relative to the total amount of constituent atoms in the distribution region.
It is constant or variable within the range of 1 to 70 atomic%.
It is desirable to have a certain area or at least
The outermost surface is usually 41 to 70 atom%, preferably
is preferably 45 to 60 at%. The above-mentioned amount range and the above-mentioned distribution state, and the above-mentioned
A photoreceptor with a surface layer created under the manufacturing conditions.
In practical terms, the container components are far superior to anything that has ever existed before.
It can be fully applied as such. below
The effect will be explained using a few examples. First, we will discuss the consistency aspect of the band gap.
For example, if the conventional surface layer and photoelectric layer
If there is a clear optical interface between
Reflection of incident light occurs at the interface, but this and the free surface
The interference of the reflections from the
There is a phenomenon in which the amount of light emitted is affected to some extent.
Ru. In particular, coherent light as a light source, e.g. a laser
This tendency is remarkable when light or the like is used.
On the other hand, for example, copying using the blade cleaning method
In the case of machines, long-term use can cause the surface layer to deteriorate.
Although some wear is inevitable, this wear
The change in the thickness of the surface layer causes a change in the interference state.
affect In other words, damage to the photoconductive layer occurs due to wear.
There is a phenomenon where the amount of incident light is affected to some extent.
This means that Band gear in the present invention
One way to control the integrity of the interface is to control the reflection at the interface.
This has the effect of minimizing the continuity of components.
It has one side of being a bandgap, and another side of it being a bandgap.
The absorbency itself is continuous by changing the
It has a double positive effect of giving sex.
Ru. Therefore, the desirable electrophotographic characteristics already mentioned
Especially outstanding in maintaining properties during long-term use.
The noteworthy work in this case is that it shows the effect of
It can be said that it is useful for Next, we will discuss the role of hydrogen in the surface layer.
Defects present in the surface layer (mainly silicon atoms and carbon
Dangling bonds of elementary atoms) are photoreceptors for electrophotography.
It is known that it has an adverse effect on the properties of the container material.
For example, charging due to charge injection from the free surface
Deterioration of characteristics, usage environment, e.g. under high humidity
Changes and changes in charging characteristics due to changes in surface structure
surface layer than the photoconductive layer during corona charging or light irradiation.
A charge is injected into the surface layer, and the charge is transferred to the defect in the surface layer.
Afterimage phenomenon during repeated use due to wrapping
etc. can be mentioned. However, the hydrogen content in the surface layer should be 41 atomic% or more.
Defects in the surface layer are greatly reduced by controlling the
As a result, all of the above problems have been solved, especially
In terms of electrical characteristics and high-speed continuous use compared to
It is possible to measure dramatic improvements. On the other hand, the hydrogen content in the surface layer is 71 atomic% or more.
As the hardness of the surface layer decreases, repeated
It cannot withstand use. Therefore, hydrogen in the surface layer
It is much better to control the content within the above range.
are very important factors in obtaining the desired electrophotographic properties.
One of the children. The hydrogen content in the surface layer is H₂Ga
flow rate, support temperature, discharge power, gas pressure, etc.
Therefore, it can be controlled. In addition, the consistency of the band gap and the hydrogen content
There is also a unique correlation between
Carbon atom (C), which is a typical variable component of Yatsupu
In the fabric area, the hydrogen content state is
To optimize the structure of or to
The content is set to minimize the
and the role of hydrogen in the surface layer.
Adjust the value so that it has the necessary value to have a solid effect.
If the amount of hydrogen increases at least toward the free surface side,
It is set in the most reasonable form to create a tendency to increase.
has been established. Therefore, the hydrogen-containing state of the surface layer in the present invention
is the effect of bandgap integrity and hydrogen content.
The effect of itself is maximized together.
Another work is to match the two.
It can be said that it also has a purpose. Halogen atoms may be included in the surface layer.
stomach. A method of containing halogen atoms in the surface layer and
For example, SiF is added to the raw material gas._Four,SiFH₃,Si₂F₆，
SiF₃SiH₃,SiCl_Foursilicon halide gas such as
Mix or/and CF_Four,CCl_Four,CH₃C.F.₃etc
Goo discharge decomposition by mixing halogenated carbon dioxide gas
It may be formed by a sputtering method or a sputtering method. The numerical range of the layer thickness in the present invention is
It is one of the important factors to effectively achieve the target.
Ru. Numerical range of layer thickness of surface layer 105 in the present invention
is intended to effectively achieve the purpose of the present invention.
It can be determined as desired depending on the purpose. Further, the layer thickness of the surface layer 105 is the same as that of the photoconductive layer 104.
Also in relation to layer thickness, the requirements for each layer area are
according to the desired characteristics based on organic relationships.
It is necessary to decide accordingly. can add more
In terms of economic efficiency, which takes into account productivity and productivity.
It is desirable that these considerations be taken into consideration. The layer thickness of the surface layer 105 in the present invention is as follows:
Preferably 0.003~30μ, more preferably 0.004~
20μ, ideally 0.005~10μ
It is something. Light reception of the light reception member for electrophotography according to the present invention
The thickness of the layer can be adjusted to suit the purpose and as desired.
It will be decided as appropriate. In the present invention, the layer thickness of the photoreceptive layer 100 is
Specifically, the photoconductive layer 104 constituting the photoreceptive layer 100
and the characteristics imparted to the surface layer 105 are effectively utilized.
light so that the purpose of the present invention can be effectively achieved.
Regarding the layer thickness relationship between the conductive layer 104 and the surface layer 105
It can be determined as appropriate and desired, and the preferred
In other words, the photoconductive layer 10
The layer thickness of 4 is made to be several hundred to several thousand times or more.
is preferred. The specific value is usually 3 to 100μ, preferably
is considered to be in the range of 5 to 70μ, optimally in the range of 5 to 50μ.
is desirable. Next, the outline of the method for manufacturing the photoconductive member of the present invention will be explained.
I will explain. Figure 24 shows a manufacturing apparatus for electrophotographic light-receiving members.
An example is shown. Gas cylinders 1102 to 1106 in the diagram include
The raw material gas for forming each layer of the present invention is sealed.
As an example, 1102 is
SiH_Four(99.999% purity) cylinder, 1103 is H₂and rare
interpreted B₂H₆Gas (purity 99.999%, below B₂H₆/
H₂It is abbreviated as ), 1104 is H₂Gas (purity 99.99999
%) cylinder, 1105 is NO gas (purity 99.999%)
Cylinder, 1106 is CH_FourGas (99.99% purity) bottle
It is Nbe. To allow these gases to flow into the reaction chamber 1101
is the valve 112 of the gas cylinders 1102 to 1106
2-1126, leak valve 1135 is closed
Check that the inflow valves 1112 to 11 are
16, outflow valves 1117-1121, auxiliary valves
Make sure that pages 1132 and 1133 are open.
First, open the main valve 1134 to open the reaction chamber 11.
01. Evacuate the inside of the gas pipe. Next, the vacuum gauge 113
The reading of 6 is approximately 5×10^-6When it becomes torr, the auxiliary battery
Lube 1132, 1133, outflow valve 1117~
Close 1121. Next, on the cylindrical base 1137, as shown in FIG.
When forming an electrophotographic light-receiving member with a layer structure
For example, from gas cylinder 1102
SiH_FourGas, H from gas cylinder 1104₂gas,
B from gas cylinder 1103₂H₆/H₂gas, gas
NO gas is supplied from cylinder 1105 to valve 112 respectively.
Open 2-1125 and check the outlet pressure gauge 1127-1
1Kg/cm for each pressure of 130²Adjust the inflow valve
Gradually open each of 1112 to 1115 and insert the mask.
flows into the controllers 1107 to 1110 respectively.
let Subsequently, the outflow valves 1117-112
0 gradually open the auxiliary valve 1132 to release each gas.
flows into the reaction chamber 1101. At this time
SiH_FourGas flow rate and B₂H₆/H₂Gas flow rate, NO gas flow
Outflow pulse 111 so that the ratio with the amount becomes the desired value.
7 to 1120, and also make sure that the pressure inside the reaction chamber is at the desired level.
Watch the reading on the vacuum gauge 1136 to make sure it reaches the desired value.
Then adjust the opening of the main valve 1134. stop
The temperature of the base cylinder 1137 is increased by the heating heater.
1138 to a temperature range of 50 to 350℃.
After confirming that the power supply 1140 is
Glow discharge is generated in the reaction chamber 1101 by setting the power to
at the same time as the pre-designed rate of change curve.
Therefore B₂H₆/H₂Gas or/and NO gas flow rate
be operated manually or by an external drive motor, etc.
Gradually change Lube 1118 or/and 1120
Boron contained in the layer formed by the operation
Distribution concentration of elementary atoms and/or oxygen atoms in the layer thickness direction
control. As described above, boron atoms and oxygen atoms are added to the desired layer thickness.
When the charge injection blocking layer containing the particles is formed
Then close the outflow valves 1120 and 1118 and
B to reception room 1101₂H₆/He gas and NO gas
At the same time, the outflow valves 1117 and 1
SiH by adjusting 119_Fourgas and H₂gas flow rate
By controlled and subsequent layer formation, acid
Charge a photoconductive layer that does not contain elementary atoms or boron atoms.
A desired layer thickness is formed on the injection blocking layer. Also, light containing oxygen atoms and/or boron atoms
When forming a conductive layer, the outflow valve 1118 or
to the desired flow rate instead of closing 1120.
Just adjust it. Halogen atoms in charge injection blocking layer and photoconductive layer
If the above gas contains SiF, for example,_FourGa
Further add gas and send it into the reaction chamber 1101.
nothing. Depending on the gas type selected when forming each layer, the layer
The formation rate can be further increased. for example
SiH_FourSi instead of gas₂H₆Layer formation using gas
If you do this, you can increase it several times and improve productivity.
do. A surface layer is placed on the photoconductive layer created as described above.
To form the photoconductive layer, a barrier similar to that used in forming the photoconductive layer is used.
For example, SiH_Fourgas, CH_Fourgas
And H as necessary₂etc. to the desired dilution gas.
Flow into the reaction chamber 1101 at a flow rate ratio to achieve desired conditions.
Therefore, by generating a glow discharge,
be done. The amount of carbon atoms contained in the surface layer is, for example,
SiH_FourGas and CH_FourGas is introduced into the reaction chamber 1101.
Arbitrarily changing the input flow rate ratio as desired
can be controlled as desired. Also, the amount of hydrogen atoms contained in the surface layer is
Ba, H₂A flow of gas introduced into the reaction chamber 1101
by arbitrarily varying the amount as desired.
It can be controlled as desired. Outflow of gases other than those required to form each layer
It goes without saying that all valves are closed, and
When forming each layer, remove the gas used to form the previous layer.
inside the reaction chamber 1101, outflow valves 1117-1
Remains in the piping from 121 to reaction chamber 1101
In order to avoid the outflow valve 1117~
1121 and open the auxiliary valve 1132.
Fully open valve 1134 to create a high vacuum in the system.
Perform exhaust operation as necessary. Also, while forming layers, make sure that the layer formation is uniform.
For this purpose, the base cylinder 1137 is connected to the motor 11.
Rotate constantly at the desired speed by 39
Ru. Example 1 Using the manufacturing equipment shown in Figure 24, the manufacturing conditions shown in Table 1
on an aluminum cylinder with a mirror finish according to
A light-receiving member for electrophotography was formed. This photoreceptor
material (hereinafter referred to as drum) with a wavelength of 780 nm.
Digital exposure function using a semiconductor laser as a light source
under various conditions.
In addition, initial chargeability, residual potential, ghost electrons, etc.
After checking the photographic characteristics and after 1.5 million sheets of actual machine durability.
Investigating the decrease in charging ability, deterioration in sensitivity, and increase in image defects.
Ta. Furthermore, in an atmosphere of high temperature and high humidity of 35℃ and 85%.
The image flow of the drum was also evaluated. stop
The drums for which the evaluation has been completed are
Cut out the part corresponding to the bottom and use it as a sample.
Quantification of hydrogen contained in the surface layer using SIMS
It was submitted for analysis. The above evaluation results and water in the surface layer
The maximum elemental content is shown in Table 2. See Table 2
In particular, the initial chargeability, image blur, and residual charge
ghost, uneven light sensitivity in the generatrix direction, deterioration of sensitivity
Significant superiority was recognized in each item. Comparative example 1 Implemented except that the creation conditions were changed as shown in Table 3.
Drum and analytical sample were prepared using the same equipment and method as in Example 1.
A pull was prepared and subjected to the same evaluation and analysis. the
The results are shown in Table 4. As seen in Table 4, there are various differences compared to Example 1.
It was recognized that the performance was inferior in the following items. Example 2 Using the manufacturing equipment shown in Figure 24, the manufacturing conditions shown in Table 5
on an aluminum cylinder with a mirror finish according to
A light-receiving member for electrophotography was formed. This photoreceptor
material (hereinafter referred to as drum) with a wavelength of 780 nm.
Digital exposure function using a semiconductor laser as a light source
under various conditions.
In addition, initial chargeability, residual potential, ghost electrons, etc.
After checking the photographic characteristics and after 1.5 million sheets of actual machine durability.
Investigating the decrease in charging ability, deterioration in sensitivity, and increase in image defects.
Ta. Furthermore, in a high temperature and high humidity atmosphere of 35℃ and 85%
Image flow on the drum was also evaluated. and,
Drums that have been evaluated are displayed at the top, middle, and bottom of the image area.
Cut out the corresponding part, use it as a sample, and send it to SIMS.
For quantitative analysis of hydrogen contained in the surface layer using
silicon atoms (Si) in the surface layer,
Component profile of carbon atoms (C) and hydrogen atoms (H) in the layer thickness direction
I checked the file. Furthermore, the charge injection blocking layer
Boron (B) and oxygen (O) component profile in the layer thickness direction
In the layer thickness direction of the isle and long wavelength photosensitive layer
The composition of germanium (Ge) was investigated. above review
Value results and maximum hydrogen content contained in the surface layer
The values are shown in Table 6, and the composition of the element in the above surface layer is
Figure 31 shows the minute profile in the above charge injection blocking layer.
The component profile of the element and the long-wavelength photosensitivity
Figure 32 shows the component profile of the element in the optical layer.
Shown below. As seen in Table 6, especially the initial charge
performance, residual potential, ghost, image blur, sense of bus direction
For each item of unevenness, sensitivity deterioration, and increase in image defects.
In addition, the interference fringes are also remarkable.
superiority was recognized. Example 3 (Comparative example 2) The surface layer was prepared under several conditions shown in Table 7.
other than that, under the same conditions as Example 1.
drums and samples for analysis were prepared. these
The drums and samples were evaluated in the same manner as in Example 1.
As a result of the analysis, the results shown in Table 8 were obtained.
Ta. Example 4 Several conditions for producing the photoconductive layer are shown in Table 9.
, and the other conditions were the same as in Example 1.
I prepared several drums. Examples of these drums
The results of the same evaluation as in 1 are shown in Table 10.
I got good results. Example 5 Several conditions for preparing the charge injection blocking layer are shown in Table 11.
The conditions were changed to , and the other conditions were the same as in Example 1.
We prepared multiple drums. these drums
The results of the same evaluation as in Example 1 are shown in Table 12.
I got the following results. Example 6 Table 13 shows several conditions for preparing the charge injection blocking layer.
The conditions were changed to , and the other conditions were the same as in Example 1.
We prepared multiple drums. these drums
The results of the same evaluation as in Example 1 are shown in Table 14.
I got the following results. Example 7 Several conditions for producing the long wavelength photosensitive layer are shown in Table 15.
The conditions were changed to , and the other conditions were the same as in Example 1.
We prepared multiple drums. these drums
The results of the same evaluation as in Example 1 are shown in Table 16.
I got the following results. Example 8 Several conditions for producing the long wavelength photosensitive layer are shown in Table 17.
The conditions were changed to , and the other conditions were the same as in Example 1.
We prepared multiple drums. these drums
The results of the same evaluation as in Example 1 are shown in Table 18.
I got the following results. Example 9 The mirror-finished cylinder can be viewed from various angles.
Fig. 29
With a cross-sectional shape such as, various cross-sectional patterns as shown in Table 19
Multiple cylinders with turns were prepared. The
Set the cylinders one after another in the manufacturing equipment shown in Figure 24,
The drum was manufactured under the same manufacturing conditions as in Example 1.
provided. The created drum has a wavelength of 780nm
Digital exposure function using a semiconductor laser as a light source
Various evaluations were conducted using an electrophotographic device. No.
We obtained 20 tables of results. Example 10 Continue to polish the mirror-finished surface of the cylinder.
By exposing it to a large number of falling bearing balls,
It is said to cause countless dents on the cylinder surface.
The surface is dimpled as shown in Figure 30.
Various cross-sectional patterns as shown in Table 21 with a cross-sectional shape
We prepared multiple cylinders with the cylinder
Step by step, set the steps in the manufacturing equipment shown in Figure 24 and carry out the process.
The drum was manufactured under the same manufacturing conditions as Example 1.
Ta. The created drum has a wavelength of 780nm.
A digital exposure function using a conductor laser as a light source.
Various evaluations were performed using the secondary photographic device, and the results shown in Table 22
The results were obtained.

【table】

[Table] ◎...Very good ○...Good △...Practically acceptable ×...Impractical

【table】

【table】

[Table] ◎...Very good ○...Good △...Practically acceptable ×...Impractical

【table】

[Table] ◎...Very good ○...Good △...Practically acceptable ×...Impractical

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

【table】

[Summary of effects of the invention]

The light-receiving member of the present invention has a photoconductive layer composed of A-Si (H, It can solve all the problems with conventional electrophotographic light-receiving members composed of (H, It is something that has gender, etc. In addition, there is no influence of residual potential and its electrical characteristics are stable, and the images obtained using it have high density and
The results are excellent, with clear halftones and other features. In particular, in the electrophotographic light-receiving member of the present invention, by providing a charge injection blocking layer, it has become possible to use a relatively low-resistance photoconductive layer that is sensitive to light in a relatively wide range of wavelengths. . Furthermore, due to the specific layer structure described above, a large number of charges that are irradiated with light and thermally excited are swept out sufficiently quickly not only in the photoconductive layer but also in the charge injection blocking layer and the surface layer. No residual potential or ghosting occurs even under exposure conditions.
Moreover, high-resolution, high-quality images can be stably and repeatedly obtained.

[Brief explanation of drawings]

FIG. 1 is a schematic layer structure diagram for explaining the layer structure of the electrophotographic light-receiving member of the present invention, and FIGS. 2 to 7 respectively show the distribution state of germanium atoms constituting the layer that is sensitive to long wavelengths. 8 to 12 are explanatory diagrams to explain group atoms or the distribution state of group atoms constituting the charge injection blocking layer, and FIGS. 13 to 19 are explanatory diagrams, respectively. Explanatory diagrams for explaining the distribution state of oxygen atoms or nitrogen atoms constituting the charge injection blocking layer, FIGS. 20 to 2
FIG. 3 is a schematic diagram for explaining the uneven shape of the surface of the support and the method for producing the uneven shape, and FIG. 24 is an example of an apparatus for forming the light-receiving layer of the electrophotographic light-receiving member of the present invention. FIG. 1 is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. Figures 25 to 28
The figure is an explanatory diagram showing the distribution state of carbon atoms and hydrogen atoms, Figures 29 and 30 are schematic diagrams showing the shape of the support, and Figures 31 and 32 are distributions of contained atoms in the layer. FIG. Regarding FIG. 1, 100...photoreceptive layer, 101
...Support, 102...Long wavelength photosensitive layer, 103...
...Charge injection blocking layer, 104...Photoconductive layer, 105
...Surface layer, 106...Free surface. Regarding FIG. 21, 1500...photoreceptive layer, 1501...support, 1502...long wavelength photosensitive layer, 1503...charge injection blocking layer, 1504...photoconductive layer, 1505
...Surface layer, 1506...Free surface. Figure 22,
Regarding FIG. 23, 1601, 1701...Support, 1602, 1702...Support surface, 160
3,1703...Rigid sphere, 1604,1704
... Spherical trace depression. Regarding Figure 24, 1101
... Reaction chamber, 1102-1106 ... Gas cylinder, 1107-1111 ... Mass flow controller, 1112-1116 ... Inflow valve, 111
7-1121...Outflow valve, 1122-112
6... Valve, 1127-1131... Pressure regulator, 1132, 1133... Auxiliary valve, 113
4... Main valve, 1135... Leak valve, 1136... Vacuum gauge, 1137... Base cylinder, 1138... Heater, 1139...
...Motor, 1140...High frequency power supply.

Claims (1)

[Scope of Claims] 1. A support, and a long-wavelength photosensitive layer containing silicon atoms and germanium atoms on the support and having sensitivity to long-wavelength light; or a charge injection blocking layer containing atoms belonging to group 3, and an amorphous material having silicon atoms as a matrix and containing at least one of hydrogen atoms and halogen atoms as a constituent element,
a photoreceptive layer having a photoconductive layer exhibiting photoconductivity and a surface layer made of an amorphous material containing silicon atoms, carbon atoms, and hydrogen atoms as constituent elements; The concentration distribution of the constituent elements in the layer thickness direction is changed such that the concentration of the carbon atoms decreases toward the interface between the surface layer and the photoconductive layer, and the concentration distribution of the hydrogen atoms in the layer thickness direction is changed. A light-receiving member for electrophotography, characterized in that the maximum concentration in the surface layer of is 41 to 70 atomic %. 2. The light-receiving member for electrophotography according to claim 1, wherein the distribution region of the constituent elements of the surface layer is present on the support side of the surface layer. 3. The light-receiving member for electrophotography according to claim 1, wherein the distribution area of the constituent elements of the surface layer extends over the entire surface layer. 4. Claims 2 and 3, wherein the surface layer contains carbon atoms in a distribution state in which carbon atoms are distributed more toward the surface side in the distribution region of the constituent elements.
2. The electrophotographic light-receiving member described in 1. 5. The light-receiving member for electrophotography according to claims 1 to 4, wherein the surface layer contains hydrogen atoms in a distribution state in which hydrogen atoms are distributed more toward the surface side in the distribution region of the constituent elements. . 6. The electrophotographic light-receiving member according to claim 1, wherein the surface layer contains halogen atoms. 7. The electrophotographic light-receiving member according to claim 1, wherein the photoconductive layer contains at least one of carbon atoms, oxygen atoms, and nitrogen atoms. 8. The electrophotographic light-receiving member according to claim 1, wherein the charge injection blocking layer contains at least one of oxygen atoms and nitrogen atoms. 9. The electrophotographic light according to Claims 1 and 8, wherein the charge injection blocking layer contains atoms belonging to Group 1 or Group 3 of the periodic table in a distribution state in which the charge injection blocking layer is distributed more toward the support side. Receptive member. 10. The electrophotographic light-receiving member according to claims 8 and 9, wherein the charge injection blocking layer contains at least one of oxygen atoms and nitrogen atoms in a distribution state in which the charge injection blocking layer is distributed in large quantities on the support side. 11. The electrophotographic light-receiving member according to claims 8 to 10, wherein at least one of oxygen atoms and nitrogen atoms contained in the charge injection blocking layer is present on the support side. 12. The electron according to claims 1 to 11, wherein the long wavelength photosensitive layer contains at least one of an atom belonging to Group 1 or Group 3 of the periodic table, an oxygen atom, and a nitrogen atom. Photographic light-receiving member.